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- 1. Microelectron. Reliability 46, 1 (2006) , “NBTI degradation: From physical mechanisms to modelling”,An overview of the evolution of transistor parameters under negative bias temperature instability stress conditions commonly observed in p-MOSFETs in recent technologies is presented. The physical mechanisms of the degradation as well as the different defects involved have been discussed according to a systematic set of experiments with different stress conditions. According to our findings, a physical model is proposed which could be used to more accurately predict the transistor degradation. Finally, based on our new present understanding, a new characterization methodology is proposed, which would open the way to a more accurate determination of parameter shifts and thus allowing implementing the degradation into design rules. (Read more)
- 2. IEEE Electron Device Lett. 25, 153 (2004) , “Evaluation of NBTI in HfO2 Gate-Dielectric Stacks With Tungsten Gates”,
- 3. Appl. Phys. Lett. 82, 269 (2003) , “Relationship between interfacial nitrogen concentration and activation energies of fixed-charge trapping and interface state generation under bias-temperature stress condition”,The influence of nitrogen concentration at a nitrided oxide/silicon interface on the activation energies of both near-interface fixed-charge trapping and interface state generation caused by negative bias temperature instability stress has been studied quantitatively. It is observed that the charge... (Read more)
- 4. Appl. Phys. Lett. 83, 1647 (2003) , “Dynamic recovery of negative bias temperature instability in p-type metal–oxide–semiconductor field-effect transistors”,An unexpected physical phenomenondynamic recovery of negative bias temperature instability (NBTI)is reported. NBTI degradation in p-type metaloxidesemiconductor field-effect transistors is significantly (by ~40%) reduced after stress interruption. NBTI recovery... (Read more)
- 5. Microelectron. Reliability 45, 71 (2005) , “A comprehensive model of PMOS NBTI degradation ”,Negative bias temperature instability has become an important reliability concern for ultra-scaled Silicon IC technology with significant implications for both analog and digital circuit design. In this paper, we construct a comprehensive model for NBTI phenomena within the framework of the standard reaction–diffusion model. We demonstrate how to solve the reaction–diffusion equations in a way that emphasizes the physical aspects of the degradation process and allows easy generalization of the existing work. We also augment this basic reaction–diffusion model by including the temperature and field-dependence of the NBTI phenomena so that reliability projections can be made under arbitrary circuit operating conditions. (Read more)
- 6. J. Appl. Phys. 94, 1 (2003) , “Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing”,We present an overview of negative bias temperature instability (NBTI) commonly observed in p-channel metaloxidesemiconductor field-effect transistors when stressed with negative gate voltages at elevated temperatures. We discuss the results of such stress on device and circuit... (Read more)
- 7. J. Appl. Phys. 100, 094108 (2006) , “The effect of interfacial layer properties on the performance of Hf-based gate stack devices”, G. Bersuker, C. S. Park, J. Barnett, P. S. Lysaght, P. D. Kirsch, C. D. Young, R. Choi, B. H. Lee, B. Foran, K. van Benthem, S. J. Pennycook, P. M. Lenahan, and J. T. RyanThe influence of Hf-based dielectrics on the underlying SiO2 interfacial layer (IL) in high-k gate stacks is investigated. An increase in the IL dielectric constant, which correlates to an increase of the positive fixed charge density in the IL, is found to depend on the starting,... (Read more)
- 8. Appl. Phys. Lett. 81, 2397-2399 (2002) , “Hydrogen redistribution induced by negative-bias-temperature stress in metal–oxide–silicon diodes”, Ziyuan LiuPoly-Si/SiO2/Si diodes in which oxides were grown thermally under wet oxidation conditions and subsequently treated by a post-oxidation anneal (POA) have been characterized electrically and chemically before and after applying negative-bias-temperature stress (NBTS). It was confirmed that... (Read more)
- 9. Appl. Phys. Lett. 76, 3771-3773 (2000) , “Do Pb1 centers have levels in the Si band gap? Spin-dependent recombination study of the Pb1 "hyperfine spectrum"”, Tetsuya D. Mishima and Patrick M. LenahanThe electronic properties of the (001) Si/SiO2 Pb1 defect are the subject of considerable controversy. We present spin-dependent recombination results which indicate most strongly that the Pb1 centers have levels in the Si band gap. Our... (Read more)
- 10. Appl. Phys. Lett. 80, 1945-1947 (2002) , “Density of states of Pb1 Si/SiO2 interface trap centers”, J. P. Campbell and P. M. LenahanThe electronic properties of the (100) Si/SiO2 interfacial defect called Pb1 are quite controversial. We present electron spin resonance measurements that demonstrate: (1) that the Pb1 defects have levels in the silicon band gap, (2) that... (Read more)
- 11. Appl. Phys. Lett. 87, 204106 (2005) , “Direct observation of the structure of defect centers involved in the negative bias temperature instability”, J. P. Campbell and P. M. LenahanWe utilize a very sensitive electron paramagnetic resonance technique called spin-dependent recombination to observe and identify defect centers generated by modest negative bias and moderately elevated temperatures in fully processed p-channel metal-oxide-silicon field-effect transistors.... (Read more)
- 12. Appl. Phys. Lett. 90, 123502 (2007) , “Observation of negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination”,The authors combine metal oxide semiconductor (MOS) gated diode measurements and very sensitive electrically detected electron spin resonance measurements to detect and identify negative bias temperature instability (NBTI) generated defect centers in fully processed HfO2 pMOS field effect... (Read more)
- 13. Appl. Phys. Lett. 91, 133507 (2007) , “Identification of atomic-scale defect structure involved in the negative bias temperature instability in plasma-nitrided devices”, J. P. Campbell, P. M. Lenahan, A. T. Krishnan, and S. KrishnanWe utilize a very sensitive electron spin resonance technique called spin-dependent tunneling to identify defect centers involved in the negative bias temperature instability in plasma-nitrided p-channel metal-oxide-silicon field-effect transistors. The defect's 29Si hyperfine... (Read more)
- 14. J. Appl. Phys. 95, 4096 (2004) , “Nitridation effects on Pb center structures at SiO2/Si(100) interfaces ”,Interfacial defect structures of NO-nitride oxide on Si(100) were characterized by electron spin resonance spectroscopy. We confirmed that the effective g values of the Pb1 center are affected by interfacial nitridation even at a small nitrogen concentration of 5 at. %, while those of the Pb0 center proved to be unchanged. We observed that the shifted Pb1 line appeared gradually with interfacial nitrogen concentration, which suggests that the nitrogen-induced modified structure substitutes for the original Pb1 structure. Angular variations of the shifted Pb1 lines were also significantly different from those of pure oxide. Based on our analysis, we attributed the g value shift of the Pb1 center to dangling bond tilting, caused by the displacement of nearest-neighbor Si atoms. (Read more)
- 15. Microelectron. Reliability 45, 57 (2005) , “Characterization of interface defects related to negative-bias temperature instability SiON/Si<100> systems ”,Interface defects related to negative-bias temperature instability (NBTI) in an ultrathin plasma-nitrided SiON/ Si<100> system were characterized by using conductance–frequency measurements, electron-spin resonance measure- ments, and synchrotron radiation X-ray photoelectron spectroscopy. It was confirmed that NBTI is reduced by using D2-annealing instead of the usual H2-annealing. Interfacial Si dangling bonds (Pb1 and Pb0 centers) were detected in a sample subjected to negative-bias temperature stress (NBTS). Although we suggest that NBTS also generates non-Pb defects, it does not seem to generate nitrogen dangling bonds. These results show that NBTI of the plasma-nitrided SiON/Si system is predominantly due to Pb depassivation. Plasma nitridation was also found to increase the Pb1/Pb0 density ratio, modify the Pb1 defect structure, and increase the latent interface trap density by generating Si suboxides at the interface. These changes are likely to be the causes of NBTI in ultrathin plasma-nitrided SiON/Si systems. (Read more)
- 16. Jpn. J. Appl. Phys. 40, 2840 (2001) , “Spin-Dependent Trap-Assisted Tunneling Current in Ultra-Thin Gate Dielectrics”,We have characterized the leakage current paths of ultra-thin gate dielectrics using spin-dependent tunneling (SDT) spectroscopy. A spin-dependent current was detected in metal-oxide-semiconductor diodes with chemical-vapor-deposition SiN gate films with thickness less than 3 nm. We examined the nature of the trap sites in terms of g-value, bias-dependent signal intensity, and magnetic-field orientation dependence. The main feature of the observed spectrum is attributed to a paramagnetic Si site in the SiN films. By using a quantitative model of electron spin-polarization, we were able to estimate the ratio of trap-assisted current to the total leakage current. (Read more)
- 17. Appl. Phys. Lett. 82, 3677-3679 (2003) , “Interface defects responsible for negative-bias temperature instability in plasma-nitrided SiON/Si(100) systems”, Shinji Fujieda, Yoshinao Miura, and Motofumi SaitohInterface defects generated by negative-bias temperature stress (NBTS) in an ultrathin plasma- nitrided SiON/Si(100) system were characterized by using D2 annealing, conductance-frequency measurements, and electron-spin resonance measurements. D2 annealing was shown to lower... (Read more)
- 18. Phys. Solid State 38, 549 (1996) , “Identification of Intrinsic Interstitial Complexes in Silicon by EPR”, G. O. Tozhibaev, Sh. M. Makhkamov, Yu. V. Gorelkinski?, N. A. Tursunov, M. A. Makhov.Although a large number of experimental papers on defect center states in silicon have been published, there is still not enough information on intrinsic interstitial defects. Of the large number of defects identified by EPR signals in irradiated silicon, only four centers (Si-G25, Si-A5, Si-B3, and Si-P6) are related to intrinsic interstitial complexes of silicon.
- 19. phys. stat. sol. (b) 189, K1 (1995) , “Charge States of Interstitial Defects in Implanted Silicon and Their Annealing Temperatures”, M. Jadan, N. I. Berezhnov, A. R. Chelyadinskii.In radiation physics of silicon a "vacancy" period has persisted for quite a long time. From a number of investigations it has been inferred that a divacancy is the main defect, stable at room temperature in silicon irradiated by fast neutrons and irons[1 to 3]. The concentrations of stable... (Read more)
- 20. phys. stat. sol. (b) 105, K91 (1981) , “Determination of the Zero-Field Splitting of Iron-Boron Pairs in Silicon”, W. Gehlhoff, K. H. Segsa, C. Meyer.In hte discussion of the omportant role of iron in connection with the formation of htermally induced defects in sillicon /1 to 4/ it seems to be expedient to remind of the fact that the direct detection of iron by EPR measurements is not restricted to the observation of neutral iron on a T... (Read more)
- 21. phys. stat. sol. (a) 41, K21 (1977) , “Anisotropic Broadening of Linewidth in the EPR Spectrum of Fe0 in Silicon”, W. Gehlhoff, K. H. Segsa.Measurements of temperature dependances of the Hall coefficient and resistivity in iron doped sillicon crystals slow that iron acts as a donor impurity, introducing a converts to a donor level 0.4 eV from the valence band. This level is unstable at room temperature and converts to a donor level 0.55... (Read more)
- 22. Jpn. J. Appl. Phys. 20(Suppl.20-1), 261 (1981) , “Isothermal Capacitance Transient Spectroscopy ”, Hideyo Okushi and Yozo TokumaruA new measurement method for deep levels in semiconductors is demonstrated, by which the measurement of the transient charge of capacitance is performed under an isothermal condition (IsothermalCapacitance Transient Spectroscopy). The method allows us to construct a precise measurement and analysis system by a programmable calculator. Detailed experiment and analysis by the method in the case of Au-doped Si indicate that the method is one of useful tools for spectroscopic analysis of deep levels in semiconductors. (Read more)
- 23. J. Phys. Soc. Jpn. 41, 711 (1976) , “Electron Spin Relaxation Time of Phosphorus-Doped Silicon”, H. Nagashima, H. Yamazaki.The decay time of induced magnetization Mz of donor electrons is observed for (Si:P) samples having impurity concentrations 5.6×1017 ≤ Nd 2.7×1018 donors / cm3 in the 1.2-4.2 K temperature range. The results show that the spin-lattice relaxation time T1 increases with increasing donor concentration and becomes so close to the spin-spin relaxation time T2 in the intermediate concentration region of transport phenomena. (Read more)
- 24. Phys. Solid State 40, 195 (1998) , “Depth Distribution of Point Defects in Si Bombarded by High-Energy N5+ and Si5+ Ions”, A. V. Dvurechenski?, A. A. Karanovich, R. Grtzschel, F. Herrmann, R. Kegler, A. V. Rybin.Electron spin resonance has been used to study the depth distribution of point defects in Si samples bombarded by N5+ (E=16 MeV) and Si5+ (E=26.8 MeV) ions at 175 and 300 K in the dose range (4–8)×1015 cm-2. It was established that unlike the implantation of moderate-energy Si ions (E ∼ 100 keV), the depth distributions of planar tetravacancies in samples bombarded by ions at 300 K under these conditions have two maxima. The experimental results indicate that the tetravacancy density maximum closer to the surface is formed as a result of secondary defect formation processes. No continuous amorphous layer was observed in the bulk of any of the Si samples. This experimental observation is evidence of defect annealing which takes place when high-energy ions are implanted in Si. (Read more)
- 25. Mater. Sci. Eng. B 124-125, 192 (2005) , “Effect of fluorine on boron thermal diffusion in the presence of point defects”, M.N.Kham and H.A.W.El Mubared and J.M.Bonar and P.AshuburnWith the increased interest in the use of fluorine co-implantation with boron for boron diffusion suppression in MOSFET devices, it is important to understand the mechanisms by which fluorine reduces boron diffusion. Mechanisms, such as B–F chemical reaction, vacancy–fluorine clusters and fluorine–interstitials interactions have been proposed in the literature. In this paper, a point defect injection is done to investigate the mechanism responsible for boron TED and thermal diffusion suppression in F+ and B+ implanted silicon. A 5 keV, 7 × 1012 cm-2 B+ implant into silicon is used which is typical for halo implants in n-MOS. Three F+ energies, 5, 50 and 185 keV, are used. It is followed by rapid thermal annealing at 900–1000 °C for different times in N2 for an inert anneal and O2 for injection of interstitial point defects from the surface. Fluorine profiles for samples implanted with 185 keV F+ and annealed in N2 show two fluorine peaks at ~Rpand~Rp/2. Under interstitial injection, the Rp/2 peak decreases in size and for long anneal times is completely eliminated, supporting an earlier claim that the Rp/2 peak is due to vacancy–fluorine clusters. The amount of suppression of both boron TED and thermal diffusion at 900 and 1000 °C anneal is correlated to the amount of fluorine remaining after anneal. (Read more)
- 26. Jpn. J. Appl. Phys. 38, 1172 (1999) , “Capacitively-Detected Magnetic Resonance in Hydrogenated Amorphous Silicon Solar Cells”, Martin S.Brandt , Ralph T.Neuberger , Martin W.Bayerl , Martin StutzmannSpin-dependent transport processes in hydrogenated amorphous silicon (a-Si:H) solar cells at high frequencies are studied with capacitively-detected magnetic resonance (CDMR). A resonant increase of the capacitance at room temperature is found with a g-factor of 2.0055, characteristic for the spin-dependent trapping of electrons at neutral dangling bonds. It is shown that with the help of spin-dependent capacitance measurements quantitative information on the defect density in the device can be obtained, a particular advantage over conventional electrically detected magnetic resonance (EDMR) where resonant changes of the dc conductivity are measured. (Read more)
- 27. Phys. Rev. Lett. 73, 1457 (1994) , “Stallinga, Gregorkiewicz, and Ammerlaan Reply”, P. Stallinga, T. Gregorkiewicz, and C. A. J. AmmerlaanA drift instability due to electrons trapped in a series of shallow magnetic troughs has been observed and compared to theoretical estimates. The instability, identified as Kadomtsev's trapped-electron mode, is maximum at a density lower than estimated from the theory. (Read more)
- 28. Appl. Phys. Lett. 36, 171 (1980) , “Erratum: Self-diffusion in intrinsic silicon”, Ludomir Kalinowski and Remy SeguinIn the abstract the temperature range for diffusion should read "from 855 to 1175 ºC" in place of "from 885 ot 1175ºC", and the activation energy as "107.1 kcal/mole" instead of "110.6 kcal/mole". (Read more)
- 29. Phys. Rev. B 72, 045219 (2005) , “Fluorine in Si: Native-defect complexes and the supression of impurity diffusion”, Giorgia M. Lopez, Vincenzo Fiorentini, Giuliana Impellizzeri, Salvatore Mirabella, Enrico NapolitaniThe transient enhanced diffusion of acceptor impurities severely affects the realization of ultrahigh doping regions in miniaturized Si-based devices. Fluorine codoping has been found to suppress this transient diffusion, but the mechanism underlying this effect is not understood. It has been proposed that fluorine-impurity or fluorine–native-defect interactions may be responsible. Here we clarify this mechanism combining first-principles theoretical studies of fluorine in Si and purposely designed experiments on Si structures containing boron and fluorine. The central interaction mechanism is the preferential binding of fluorine to Si-vacancy dangling bonds and the consequent formation of vacancy-fluorine complexes. The latter effectively act as traps for the excess self-interstitials that would normally cause boron transient enhanced diffusion. Instead, fluorine-boron interactions are marginal and do not play any significant role. Our results are also consistent with other observations such as native-defect trapping and bubble formation. (Read more)
- 30. Phys. Rev. B 74, 113301 (2006) , “Reactions of excess hydrogen at a Si(111) surface with H termination: First-principles calculations”, L. Tsetseris, S. T. PantelidesHydrogen reactions with silicon substrates is an established technique for the study and control of surface morphology. Here, we report the results of first-principles calculations on the trapping and depassivation reactions involving excess hydrogen (x-H) at a fully H-passivated Si(111) surface. We find that x-H atoms can depassivate Si-H bonds with a small barrier of 0.8 eV, or they can get trapped in very stable configurations that comprise of a dihydride and a vicinal Si-H bond. Desorption of H2 molecules from these complexes has an activation energy of 1.68 eV, which can account for pertinent experimental data. We discuss also the effect of strain on the possibility of altering the x-H surface profile. (Read more)
- 31. Solid State Commun. 132, 545 (2004) , Pergamon Press , “Pressure-induced phase transitions in Si observed by thermoelectric power measurements”, S.V. Ovsyannikov, V.V. Shchennikov, A. Misiuk, V.V. Shchennikov JrFor the first time the phase transitions under high pressure P up to 20 GPa have been observed in Czochralski-grown Si single crystals by thermoelectric power S measurements. Values of S≈+8±3 μV/K have been determined for tetragonal, orthorhombic and simple hexagonal high-pressure phases. The behaviour of S(P) was found to be rather different for different Si samples—initial and pre-treated by high temperatures 450–650ºC under hydrostatic pressure 0–1.5 GPa. (Read more)
- 32. Solid State Commun. 61, 199-202 (1987) , “An EPR study on a new triclinic symmetry defect in neutron-irradiated FZ-silicon”, Wu En, Wu Shu-xian, Mao Jin-Chang, Yan Mao-Xun, Qin Guo-gang
- 33. Solid State Commun. 53, 1135 (1985) , “Electron Paramagnetic Resonance on Shallow Acceptor Impurities in Silicon”, R. van Kemp, C. A. J. Ammerlaan.The shallow acceptor impurities boron, aluminum, gallium and indium in silicon were investigated by electron paramagnetic resonance (EPR) using a K-band superheterodyne spectrometer. The EPR spectra of these impurities were observed at low temperatures (1.4K < T < 4.2K) under conditions of zero and small values of external uniaxial stress. the observed angular dependence of the resonance lines can be analyzed using the effective spin Hamiltonian H = HB + Hε with J = 3/2 [1], HB = ?, Hε = ?. By making a least squares fit to the experimental data, the g-values g1' and g2' and the deformation potential parameters b' and d' were obtained. Under a variety of conditions peculiar line shapes and width were observed. We considered teh following mechanism to explain the observed characteristics of the resonance lines: double and triple quantum transitions, linear and quadratic effects of strain, dynamic Jahn-Teller distortion, transition probabilities and the effect of relaxation time on spin dynamics. Double and triple quantum transitions can occur in this system because j = 3/2. They can be recognized because their intensity is proportional to the square and the cube, respectively, of the microwave power. However, in the experiment no such dependence on the microwave power was found. The expressions thus obtained can account qualitatively for the line width and asymmetry when it is assumed that the strain distribution in the crystal is approximately Gaussian. These effects can not account for a peculiar narrow dip that is present in the centers of the resonance lines with ΔMj = 1 and ΔMj = 2 [2]. A dynamic Jahn-Teller distortion of the acceptor atoms would have result that there are no sites with strain zero. Together with the random strains present in the crystal, the effect will be a shift of intensity away from the magnetic field at which the center of the line occurs. Calculation of the transition probabilities for the ΔMj = 1, 2, 3 transitions showed that these do not become very small in any of the cases. An explanation of the dip in the center of the resonance line can be offered in the following way [3]. The broad resonance lines for the ΔMj = 1 and ΔMj = 2 transitions are a superposition of spin packets which are shifted due to the random internal strains. For small values of the strains, packets will overlap, allowing a form of cross-relaxation to occur. this results in broadening of the homofeneous width and smaller intensity at the centerof the resonance line. (Read more)
- 34. phys. stat. sol. (b) 103, 519-528 (1981) , “Investigation of the dislocation spin system in silicon as model of one-dimensional spin chains”, V. A. Grazhulis, V. V. Kveder, Yu. A. OsipyanMagnetic properties of the dislocation dangling bond (DDB) spin system in silicon crystals are investigated by means of the EPR technique at T = (1.3 to 150) K. Experimental results are obtained which enable one to develop a one-dimensional model of the spin system according to which the DDB chains... (Read more)
- 35. Physica 116B, 583 (1983) , “Investigations of Well Defined Dislocations in Silicon”, H. Alexander, C. Kisielowski-Kemmerich, E. R. Weber.The velocity v of dislocation half-loops introduced into swirl-free floating-zone grown undoped silicon has been measured at 420ºC in the resolved shear stress range 30<τ<300 MPa. Clearly impurity atoms interact with dislocations in this material. Using the starting value of v we found the two types of 60º dislocations, which are distinguished by the sequence of their partials, to have different velocities. Furtheron the velocity depends not only on τ, but also on the elastic strain of the lattice. In the second part the paper reviews EPR spectroscopy of plastically deformed silicon and collects new results on the activity of dislocations in this material as trapping / recombination centers (decay of photo-EPR, photoluminescence, EBIC microscopy and photoplastic effect). (Read more)
- 36. Appl. Phys. Lett. 78, 1453-1454 (2001) , “Response to "Comment on `Do Pb1 centers have levels in the Si band gap? Spin-dependent recombination study of the Pb1 "hyperfine spectrum" ' " [Appl. Phys. Lett. 78, 1451 (2001)]”, Tetsuya D. Mishima and Patrick M. LenahanWe recently published a letter in which we utilized spin-dependent recombination (SDR) measurements to demonstrate that Pb1 centers, silicon dangling-bond defects at the (001) Si/SiO2 interface, have electronic levels in the silicon band gap.1 In their comment on our... (Read more)
- 37. Phys. Rev. Lett. 15, 667 (1965) , “Effect of Spin Resonance on Hot Electrons by Spin-Orbit Coupling in n-Type InSb ”, M. Guéron and I. SolomonWe have observed the magnetic resonance of conduction electrons in n-type indium antimonide, by the "heating" of the electron kinetic-energy temperature via the electron spins. This is the first direct evidence suggesting a contribution of spin-orbit coupling to relaxation in this system. In... (Read more)
- 38. Phys. Rev. Lett. 93, 245901 (2004) , “Ab Initio Calculations to Model Anomalous Fluorine Behavior”, Milan Diebel, Scott T. Dunhammplanted fluorine is observed to behave unusually in silicon, manifesting apparent uphill diffusion and reducing diffusion and enhancing activation of boron. In order to investigate fluorine behavior, we calculate the energy of fluorine defect structures in the framework of density functional theory. In addition to identifying the ground-state configuration and diffusion migration barrier of a single fluorine atom in silicon, a set of energetically favorable fluorine defect structures were found (FnVm). The decoration of vacancies and dangling silicon bonds by fluorine suggests that fluorine accumulates in vacancy-rich regions, which explains the fluorine redistribution behavior reported experimentally. (Read more)
- 39. Phys. Rev. Lett. 90, 155901 (2003) , “Fluorine in Silicon: Diffusion, Trapping, and Precipitation”, X. D. Pi, C. P. Burrows, P. G. ColemanThe effect of vacancies on the behavior of F in crystalline Si has been elucidated experimentally for the first time. With positron annihilation spectroscopy and secondary ion mass spectroscopy, we find that F retards recombination between vacancies (V) and interstitials (I) because V and I trap F to form complexes. F diffuses in the V-rich region via a vacancy mechanism with an activation energy of 2.12±0.08 eV. After a long annealing time at 700ºC, F precipitates have been observed by cross-section transmission electron microscopy which are developed from the V-type defects around the implantation range and the I-type defects at the end of range. (Read more)
- 40. Nature 396, 58-60 (1998) , “Interface structure between silicon and its oxide by first-principles molecular dynamics”, A. Pasquarello, M. S. Hybertsen, R. CarThe requirement for increasingly thin (<50 Å) insulating oxide layers in silicon-based electronic devices highlights the importance of characterizing the Si–SiO2 interface structure at the atomic scale. Such a characterization relies to a large extent on an understanding of the atomic-scale mechanisms that govern the oxidation process. The widely used Deal–Grove model invokes a two-step process in which oxygen first diffuses through the amorphous oxide network before attacking the silicon substrate, resulting in the formation of new oxide at the buried interface1. But it remains unclear how such a process can yield the observed near-perfect interface2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12. Here we use first-principles molecular dynamics13, 14, 15 to generate a model interface structure by simulating the oxidation of three silicon layers. The resulting structure reveals an unexpected excess of silicon atoms at the interface, yet shows no bonding defects. Changes in the bonding network near the interface occur during the simulation via transient exchange events wherein oxygen atoms are momentarily bonded to three silicon atoms — this mechanism enables the interface to evolve without leaving dangling bonds. (Read more)
- 41. Physica B 170, 155-167 (1991) , “Electron paramagnetic resonance of hydrogen in silicon ”, Yu.V. Gorelkinskii, N.N. Nevinnyi
- 42. Physica 117B&118B, 9 (1983) , “Deep Levels in Semiconductors”, G. D. Watkins.The 3d transition element ion impurities in silicon are reviewed for the broad insight they provide in understanding deep levels in semiconductors. As interstitials, their interaction with the host tends to confine the d-levels to the forbidden gap, providing many deep states. The interaction at the substitutional site is best considered as an interaction tends to repel deep a1 and t2 levels from the gap. When the levels are present, they are mostly vacancy-like and the defect is likely to display the large lattice relaxations characteristic of the vacancy. (Read more)
- 43. Physica 116B, 332 (1983) , “The Structure of the Pt- Center in Silicon”, J. C. M. Henning.Electron spin resonance (ESR), strain-moduled electron spin resonance (SMESR) and infrared absorption (IR) experiments are reported on the platinum accepter (Pt-) in silicon. It turns out that in the concentration range 1016 < [Pt] < 1017 cm-3 Pt is exclusively present as substitutional-interstitial (Ptb-Pti) pairs. In n-type material the charge state may be either Pt--Ptio or Ptso-Ptio, depending on the Fermi energy. (Read more)
- 44. Physica 116B, 306 (1983) , “ESR of Fe-S Pairs in Silicon”, O. F. Schirmer.The ESR of a new Fe-S center in Si is reported. It is shown that the g-values of three of the known Fe-S pairs are determined by exchange interaction of the angular momentum of Feio with that of a nearby S = 1/2 ion, which is likely to be S+ or (S-S)+. The analysis uses an analogy to the O2--centers in the alkali halides. Orbach relaxation of the ESR of the new Fe-S center shows that an excited state lines 8.4 meV above the groundstate. (Read more)
- 45. Physica 116B, 281 (1983) , “Excited Triplet States of Defects and Optical Nuclear Polarization in Silicon”, L. S. Vlasenko.Using the nuclear magnetic resonance (NMR) and electron spin resonance (ESR) techniques the processes of the optical polarization of the electron and nuclear spinis have been studied iin silicon containing the structure defects of various kinds. It has been established that such structure defects as radiation defects, thermal defects, nad dislocations to be under illumination in photo-excited triplet states with nonequilibrium spin polarizaton are respoonsibke for the appearance of the strong nuclear polarization independent on the light polarization. (Read more)
- 46. Physica 116B, 258 (1983) , “Origin of the 0.97 eV Luminescence in Irradiated Silicon”, K. P. Odonnell, K. M. Lee, G. D. Watkins.Optical detection of magnetic resonance studies are described for the well-studied optical center with zero phonon line at 0.97 eV in irradiated silicon. Analysis of the S = 1 ODMR spin Hamiltonian reveals a low symmetry (C1h) center and a resolved 29Si hyperfine interaction with a single silicon atom. In a specially enriched 13C doped sample we find additional hf interactions with two equivalent carbon atoms. At elevated temperatures, the defect reorients easily from one C1h distortion to another around a common <111> axis; during this reorientation the spin density remains located on the same silicon atom and the same carbon pair. Froom these results we construct a model comprising two adjacent (substitutional) carbon atoms and an interstitial silicon atom which has distorted out from a bond-centered position We conclude that the same defect gives rise to the Si-G11 EPR spectrum when positively charged. (Read more)
- 47. Physica 116B, 224 (1983) , “The Negatively Charged Vacancy in Silicon: Hyperfine Interactions from ENDOR Measurements”, M. Sprenger, S. H. Muller, C. A. J. Ammerlaan.The negatively charged lattice vacancy V- was produced in p-type aluminum doped silicon by 1.5 MeV electron irradiation at temperatures below 20 K. The Si-G2 EPR spectrum, which is associated with the negative charge state of the lattice vacancy, was investigated by electron nuclear double resonance. Hyperfine interactions between the unpairerd defect electron and 29Si nuclei on various lattice sites with respect to the vacancy were determined in order to obtain detailed information about the electron wave function. By symmetry, there are four distinguishable classes of hyperfine interaction tensors. Values for the contact term of the hyperfine interactions are reported for 27 shells containing 73 atoms. The one-electron LCAO scheme to describe the electron wave function is discussed. Also, the extension and shape of the defect electron distribution is discussed in an empirical manner. (Read more)
- 48. Physica 116B, 219 (1983) , “Negative-U Properties of the Lattice Vacancy in Silicon”, J. L. Newton, A. P. Chatterjee, R. D. Harris, G. D. Watkins.We present direct and unambiguous evidence that the donor levels of the silicon lattice vacancy are inverted in negative-U ordering, as originally suggested by Baraff et al. The second donor level, at Ev + 0.13 eV, lies above the first donor level, at Ev + 0.05 eV. First, we demonstrate that the Ev + 0.13 eV level is a donor state by the absence of the Poole-Frenkel effect in DLTS studies. Second, we describe a detailed EPR study of reactions involving hole transfer via the valence band between the vacancy and the shallow alminium accepter. By monitoring the intensity of the V+ and Also EPR signals, all aspects of the negative-U ordering appear to be confirmed. (Read more)
- 49. Physica B 116, 583-593 (1983) , “Investigations of well defined dislocations in silicon”, H. Alexander, C. Kisielowski-Kemmerich, E. R. WeberThe velocity v of dislocation half-loops introduced into swirl-free floating-zone grown undoped silicon has been measured at 420°C in the resolved shear stress range 30 <τ<300 MPa. Clearly impurity atoms interact with dislocations in this material. Using the starting value of v we found the two types of 60° dislocations, which are distinguished by the sequence of their partials, to have different velocities. Furtheron the velocity depends not only on τ, but also on the elastic strain of the lattice. In the second part the papers review EPR spectroscopy of plastically deformed silicon and collects new results on the activity of dislocations in this material as trapping / recombination centers (decay of photo-EPR, photoluminescence, EBIC microscopy and photoplastic effect). (Read more)
- 50. Physica 116B, 564 (1983) , “Experimental Tests of Non-Thermal Effect for Pulsed-Laser Annealing by Time-Resolved Reflectivity and EPR Measurements”, K. Murakami, K. Masuda, Y. Aoyagi, S. Namba.Experimental tests of non-thermal effect for pulsed laser annealing (PLA) of semiconductor have been done by means of two techniques. One is time-resolved reflectivity measurement during single 30-ps PLA of amorphous GaAs. An anomalous dynamic behavior is observed at an energy-density window, i.e, a reflectivity dip appears after the disappearance of the high reflectivity phase, concomitant with final production of a new amorphous GaAs state. This result cannot be interpreted in terms of the simple thermal effect. The other is EPR measurement of Si samples which are implanted and then annealed by 40-ns pulsed laser. No EPR results of N donors in Si support positively a non-thermal effect, while it is difficult to explain EPR results of laser-induced paramagnetic defects only by the simple thermal annealing model. (Read more)
- 51. Phys. Rev. Lett. 48, 37 (1982) , “Optical Detection of Magnetic Resonance for a Deep-Level Defect in Silicon”, K. M. Lee, K. P. O'Donnell, J. Weber, B. C. Cavenett, and G. D. WatkinsOptical detection of magnetic resonance is reported for the 0.97-eV luminescence in neutron-irradiated silicon. The resonance is of an excited triplet (S=1) state of the defect, which is not the radiative state, known to be a singlet (S=0). The spectrum is unusual in that it is characteristic of a... (Read more)
- 52. Phys. Rev. Lett. 36, 1329 (1976) , “EPR Observation of the Isolated Interstitial Carbon Atom in Silicon ”, G. D. Watkins and K. L. BrowerAn EPR spectrum, labeled Si-G12, is identified as arising from an isolated interstitial carbon atom in silicon. A ?100? C-Si interstitialcy model is suggested for the defect in which a silicon and carbon atom pair partially share single substitutional site. Because carbon is isoelectronic with... (Read more)
- 53. Phys. Rev. B 9, 2607 (1974) , “EPR of a Jahn-Teller distorted (111) carbon interstitialcy in irradiated silicon”, K. L. Brower.An electron-paramagnetic-resonance (EPR) study of irradiated, p-type silicon doped with carbon enriched with 13C has revealed that the Si-G11 spectrum possesses a 13C hyperfine structure. Owing to the complexity and lack of resolution in the observed spectrum, we found it... (Read more)
- 54. Phys. Rev. B 42, 5765 (1990) , “Bistable interstitial-carbonsubstitutional-carbon pair in silicon”, L. W. Song, X. D. Zhan, B. W. Benson, and G. D. WatkinsA bistable interstitial-carbonsubstitutional-carbon pair has been identified in electron-irradiated silicon by a combination of several spectroscopic experimental techniques. In the positive and negative charge states, the stable configuration of the defect involves a carbon-silicon molecule... (Read more)
- 55. Phys. Rev. B 42, 5759 (1990) , “EPR Identification of the Single-Acceptor State of Interstitial Carbon in Silicon”, L. W. Song and G. D. WatkinsAn EPR center labeled Si-L6 is reported which is identified as arising from the singly ionized acceptor state of isolated interstitial carbon (Ci-) in electron-irradiated crystalline silicon. Correlated deep-level capacitance transient spectroscopy measurements locate the... (Read more)
- 56. Phys. Rev. B 14, 872-883 (1976) , “EPR of a <001> Si interstitial complex in irradiated silicon”, K. L. Brower.This paper deals with an electron-paramagnetic-resonance study of the Si-B3 center, which was first reported by Daly. The Si-B3 center is a secondary defect which forms upon annealing between 50 and 175C in irradiated boron-doped silicon and is stable up to ?500C. Our studies indicate that the... (Read more)
- 57. Lattice Defects in Semiconductors 23, 1-22 (1975) , Institute of Physics, London , “EPR Studies of the Lattice Vacancy and Low-Temperature Damage Processes in Silocon”, G. D. Watkins.EPR studies of silicon irradiated at 20.4 K and 4.2 K by 1.5 MeV and 46 MeV electrons are described. In 46 MeV irradiations the dominant defects formed appear to be divavancies and other multiple defect aggregates which liberate vacancies throughout the anneal to room temperature as they reorder, recombine, etc. For 1.5 MeV irradiations group III atoms play a vital role in p- and n-type materials in trapping interstitials and stabilizing damage. Carbon and oxygen are not effective interstitial traps at these temperatures. Evidence of limited vacancy migration during irradiation is also cited. Two distinct excited configurations of vacancy-oxygen pairs are identified as precursors to A-centre formation in n-type silicon. The kinetics for their conversion to A-centres depends strongly upon the Fermi level as does the isolated vacancy migration energy whhich is measured to be 0.18 ± 0.02 eV for the V= charge state. The vacancy has four charge states, V+, V0, V- and V=. Kinetics for hole release from V+ reveals an activation barrier of 0.057 eV. The concentration of V+ at 20.4 K in boron-doped material indicates the corresponding donor level even closer to the band edge, approximately EV + 0.039 eV. Jahn-Teller energies for V0, V+, and V- are estimated from stress-alignment studies and confirmed to be large. Kinetics studies for reorientation from one Jahn-Teller distortion to another are also described for each charge state.
- 58. Phys. Rev. B 14, 4506 (1976) , “EPR study of neutron-irradiated silicon: A positive charge state of the <100> split di-interstitial”, Young-Hoon Lee, Nikolai N. Gerasimenko, and James W. CorbettThe Si-P6 spectrum shows an intrinsic tetragonal symmetry with the C2 axis along ?100? and distortion forces the principal axes of the g tensor to be displaced in the {100} plane. The g tensor previously identified by Jung and Newell was found to be due to the motionally averaged state... (Read more)
- 59. Phys. Rev. B 47, 6363-6380 (1993) , “Electron paramagnetic resonance of multistable interstitial-carbonsubstitutional-group-V-atom pairs in silicon”, X. D. Zhan, G. D. WatkinsA total of five new electron paramagnetic resonance (EPR) centers are observed in electron-irradiated P-, As-, and Sb-doped silicon. Three are identified as arising from the neutral charge state of the stable configuration and two of the four metastable configurations of an... (Read more)
- 60. phys. stat. sol. (a) 72, 701-713 (1982) , “On the Energy Spectrum of Dislocations in Silicon”, V. V. Kveder, Yu. A. Osipyan, W. Schrter, G. Zoth.Using deep level transient spectroscopy (DLTS) the defects introduced into silicon by plastic deformation are investigated with respect to their capture and emission characteristics. In agreement with what has been found by electron spin resonance (EPR), kind and density of the detected localized... (Read more)
- 61. phys. stat. sol. (a) 55, 251 (1979) , “Photo-EPR of Dislocations in Silicon”, R. Erdmann, H. Alexander.The dependence of the EPR spectrum of dislocations in deformed silicon on illumination with monochromatic light reveals the two EPR centers Si - K1 (S < 1/2) to be different ionization states of one and the same dislocation center. The energy level separating these ionization states lies near the... (Read more)
- 62. J. Phys. Chem. Solids 31, 1381 (1970) , “The Annealing of the EPR-Signal Produced in Silicon by Plastic Deformation”, F. D. Wohler and H. AlexanderW. SanderIn silicon an EPR signal is produced by plastic deformation. The annealing behavior of this signal has been investigated, and the dislocation density and structure has been studied by the etch pit technique and by electron microscopy. The EPR-signal anneals in one stage with an activation energy of... (Read more)
- 63. Sov. Phys. JETP 39, 721 (1974) , “Investigation of the Properties of the Dislocation EPR Spectra in Silicon”, S. V. Broude, V. A. Grazhulis, V. V. Kveder, Yu. A. Osipyan.We investigated the properties of the dislocation sEPR spectra in Si in the temperature interval from 1.3 to 150ºK. At helium temperatures we observed anomalies in the behavior of the dispersion signals χ' under conditions of adiabatic rapid passage (APR) through resonance. It is shown that the spectrum of the D centers has a hyperfine (hf) structure, with a line width ∆Hi ~0.2-0.3 Oe (the distance between neighboring hf lines is of the order of their width). It is established that under ARP conditions excitations are transferred between the hf lines as a result of spin-spin interactions with a characteristic time τ3, equal to 3-10 sec in the range 1.3-4.2ºK and weakly dependent on the temperature and on the microwave power. We measured the dependence of the integrated intensity of the absorption signals χ'' on the temperature in the 20-150ºK range. A strong deviation from the Curie low was observed at T=40-50ºK. The temperature dependence of the quantity τ1τ2 was measured in the same temperature range, under the assumption that the hf lines have a Lorentz shape. An anomaly at T=40-50ºK was observed also on the plot of τ1τ2=f(1/T). It is concluded that a magnetic phase transition takes place in the D-center system at 40-50ºK, and consequently the dislocations in Si can be regarded as models of one-demensional chain of spins with exchange interactions.
- 64. Sov. Phys. JETP 33, 623 (1971) , “Electron paramagnetic resonance of dislocations in silicon”, V. A. Grazhulis, Yu. A. Osip'yan
- 65. Sov. Phys. Solid State 28, 1862 (1986) , “Electron states having spin S ≥ 1 at dislocations in silicon”, M. N. Zolotukhin
- 66. Solid State Commun. 3, 357 (1965) , “Elektronenspin-Resonanz in Verformtem Silizium”, H. Alexander, R. Labusch and W. SanderBei 800°C verformte Silizium-Kristalle zeigen ein Elektronenspinresonanz-Signal, dessen Intensität mit der Versetzungsdichte zunimmt. Wir vermuten, daβ dieses Signal von ungepaarten Elektronen im Kern von Versetzungen stammt. Durch die Verformung wird die Bildung von Atomgruppen in... (Read more)
- 67. Phys. Rev. B 32, 6571 (1985) , “Electrical Properties of Dislocations and Point Defects in Plastically Deformed Silicon”, P. Omling, E. R. Weber, L. Montelius, H. Alexander, J. Michel.Energy levels of defect states introduced by plastic deformation of n-type silicon have been studied by capacitance transient spectroscopy. From the observed properties of the defects, it is concluded that two different types of defects are produced. The first type is interpreted as point defects... (Read more)
- 68. Sov. Phys. JETP 31, 677-679 (1970) , “Electron Paramagnetic Resonance in Plastically Deformed Silicon”, V. A. Grazhulis, Yu. A. Osipyan.Lightly doped silicon crystals were investigated experimentally by the electron paramagnetic resonance method. Paramagnetic centers, generated during plastic deformation of these crystals, were detected. The concentration of these centers increased monotonically with increasing degree of deformation. The EPR spectrum of these centers was anisotropic and had a partially resolved fine structure. The centers werestrongly annealed only at temperature T ≧ 600ºC and the activation energy of the annealing process was ~2 eV. It was concluded that these centers were due to electrons of broken bonds in the cores of dislocations with edge components.
- 69. phys. stat. sol. (a) 168, 73 (1998) , “Self-Interstitials in Silicon Irradiated with Light Ions”, B. N. Mukashev, Kh. A. Abdullin, Yu. V. Gorelkinskii.The behavior of self-interstitials in silicon which was irradiated with light ions (protons and -particles) and electrons was explored by monitoring known impurity interstitial centers (Ci, Ali, (Si-O)i) with deep level transient spectroscopy (DLTS) and electron... (Read more)
- 70. Semicond. Sci. Technol. 11, 1696-1703 (1996) , “Metastable oxygen - silicon interstitial complex in crystalline silicon”, Kh. A. Abdullin, B. N. Mukashev, Yu. V. Gorelkinskii.A new metastable complex in monocrystalline silicon irradiated at with protons has been studied. Electron paramagnetic resonance (EPR) Si-AA13 ( symmetry) and Si-AA14 ( symmetry) spectra as well as the known Si-A18 spectrum originate from different molecular configurations of the complex. A... (Read more)
- 71. Mater. Sci. Eng. B 58, 171-178 (1999) , “Self-Interstitial Related Reactions in Silicon Irradiated by Light Ions”, B. N. Mukashev, Kh. A. Abdullin, Yu. V. Gorelkinskii and S. Zh. TokmoldinRecent deep level transient spectroscopy (DLTS), electron paramagnetic resonance (EPR) and infrared (IR) spectroscopy data on interactions of self-interstitial with carbon, aluminium, oxygen and hydrogen in silicon irradiated by light ions are reviewed. Self-interstitial behaviour in silicon was... (Read more)
- 72. Mater. Sci. Eng. B 36, 77 (1996) , “New Oxygen-Related EPR Spectra in Proton-Irradiated Silicon”, Kh. A. Abdullin, B. N. Mukashev, A. M. Makhov and Yu. V. GorelkinskiiAn electron-paramagnetic resonance (EPR) study of proton-irradiated silicon has revealed two new EPR spectra labeled Si-AA13 and Si-AA14. Spectrum AA13 has C3v symmetry (g = 1.9985 and g = 2.0024 ± 0.0002), AA14 C1 symmetry. These spectra correspond to positive (B+) and negative (B−)... (Read more)
- 73. Phys. Rev. B 35, 1582 (1987) , “Electronic and Atomic Structure of the Boron-Vacancy Complex in Silicon”, M. Sprenger, R. van Kemp, E. G. Sieverts, and C. A. J. AmmerlaanIn electron-irradiated boron-doped silicon the electron paramagnetic resonance spectrum Si-G10 has been studied. Earlier this spectrum had tentatively been identified with a boron-vacancy complex in a next-nearest-neighbor configuration. With electron-nuclear double resonance the hyperfine and... (Read more)
- 74. Mater. Res. Soc. Symp. Proc. 46, 227 (1985) , “Defect Identification in Silicon Using Electron Nuclear Double Redonance”, C. A. J. Ammerlaan, M. Sprenger, R. van Kemp, D. A. van Wezep.The application of electron nuclear double resonance (ENDOR) for identification and characterization of point defects in silicon is reviewed. Taking the vacancy and the boron-vacancy complex as examples it is discussed how ENDOR can provide information on the atomic and electronic structure of paramagnetic centers.
- 75. Phys. Rev. B 13, 2511 (1976) , “EPR of a Trapped Vacancy in Boron-Doped Silicon”, G. D. Watkins.An S=1/2 EPR spectrum, labeled Si-G10, is tentatively identified as a lattice vacancy trapped by substitutional boron in silicon. It is produced in boron-doped vacuum floating-zone silicon by 1.5-MeV-electron irradiation at 20.4 K followed by an anneal at ? 180 K, where the isolated vacancy... (Read more)
- 76. phys. stat. sol. (a) 92, K53 (1985) , “Low Symmetry Centre in Silicon”, A. V. Dvurechenskii, V. V. Suprunchik.Investigation of the defect formation in heavily doped silicon irradiated by high dose of electrons have led to the discovery of new types of defects /1, 2/. The present note is the next one of this series. A new centre is investigated in p-type silicon irradiated by neutrons. (Read more)Si| EPR neutron-irradiation| A5 C1 H8 P3 P6 Sii Vsi interstitial p-type triclinic vacancy .inp files: Si/H8/H8.inp | last update: Takahide Umeda
- 77. Phys. Lett. A 99, 117 (1983) , “Low-Symmetry EPR Center in Hydrogen-Implanted Silicon”, Yu.V. Gorelkinskii, N.N. NevinnyiA new S = 1/2 EPR spectrum, labeled Si-AA2, arises from a negative-charge-state defect which has a low symmetry(C1). It is produced in crystalline silicon by hydrogen implantation at ≈20°C followed by annealing at ≈580°C and disappears completely at 700°C. The kinetics... (Read more)Si| EPR ion-implantation| 29Si AA2 C1 Hydrogen Si-H Vsi cluster(>3) p-type triclinic vacancy .inp files: Si/AA2/AA2.inp | last update: Takahide Umeda
- 78. Phys. Rev. B 9, 4351-4361 (1974) , “EPR study of defects in neutron-irradiated silicon: Quenched-in alignment under <110>-uniaxial stress”, Young-Hoon Lee and James W. CorbettThe stress effect in an EPR study is first treated rigorously in terms of the piezospectroscopic tensor, taking account of the local symmetry of a defect. It is found that the degree of alignment (n?/n?) provides incisive information on the structure of a defect; in general, a... (Read more)
- 79. Semicond. Sci. Technol. 10, 977 (1995) , “EPR and ENDOR Observation of Orthorhombic Au-Li and Pt-Li Pairs in Silicon: on the Problem of the Observation of Isolated AuSi0 with Magnetic Resonance”, S. Greulich-Weber, P. Alteheld, J. Reinke, H. Weihrich, H. Overhof, J. M. Spaeth.We report the observation of orthorhombic Au-Li and Pt-Li pairs in Si using EPR and ENDOR techniques and also MCDA spectroscopy. The EPR spectra alone could be mistaken as being due to orthorhombic isolated point defects and ENDOR is required to detect the Li partner of the pair. Comparison of the... (Read more)
- 80. Phys. Rev. Lett. 79, 1507 (1997) , “Identification of the Silicon Vacancy Containing a Single Hydrogen Atom by EPR”, B. Bech Nielsen, P. Johannesen, P. Stallinga, K. Bonde Nielsen
- 81. Jpn. J. Appl. Phys. 24, 279 (1985) , “Solubility and Diffusion Coefficient of Oxygen in Silicon ”, Yoshiko Itoh and Tadashi NozakiThe solubility and diffusion coefficient of oxygen in silicon between 1000°C and 1375°C were examined by charged particle activation analysis with the 16O(3He, p)18F reaction, in which oxygen was activated with an equal probability over the depth of up to 250... (Read more)
- 82. Jpn. J. Appl. Phys. 32, L1715 (1993) , “Carbon-Induced Rapid Annihilation of Thermal Double Donors in Czochralski Silicon Studied by Infrared Absorption Spectroscopy ”, Yoichi Kamiura*1, Yutaka Uno*2 and Fumio HashimotoCarbon-rich Czochralski Si shows anomalously rapid annihilation for all the species of thermal double donors at 470°C in two stages, which have good time correlations with the decrease of substitutional carbon density and also with the formation of two kinds of carbon-related new donors which... (Read more)
- 83. Phys. Rev. B 58, 3842 (1998) , “Electron Paramagnetic Resonance Study of Hydrogen-Vacancy Defects in Crystalline Silicon”, P. Stallinga, P. Johannesen, S. Herstm, K. Bonde Nielsen, B. Bech Nielsen, J. R. Byberg.Electron paramagnetic resonance measurements on float-zone silicon implanted with protons at ?50 K followed by heating to room temperature have revealed two signals S1a and S1b belonging to the S1 group of signals. S1a and S1b both originate from defects... (Read more)
- 84. J. Appl. Phys. 42, 864 (1971) , “New EPR Spectra in Irradiated Silicon”, D. F. Daly.The purpose of this brief note is to report the spin Hamiltonian parameters for two new EPR spectra that have been observed in annealed irradiated silicon. Comparisons are also made with the parameters of centers already belonging to the extensive catalogue of EPR spectra in silicon. In acordance... (Read more)
- 85. Appl. Phys. Lett. 8, 280 (1966) , “SILICON SELF-DIFFUSION”, B. J. Masters and J. M. FairfieldThe process of self-diffusion within the silicon lattice is of considerable interest, not only for the development of diffusion theory, but also because of the limitation it imposes upon the fabrication of semiconductor devise structures. Several authors have estimated the activation energy of... (Read more)
- 86. Eur. Phys. J. Appl. Phys. 27, 13-19 (2004) , “Measurement of process-induced defects in Si sub-micron devices by combination of EDMR and TEM”, T. Umeda, A. Toda, Y. MochizukiProcess-induced defects are a serious issue for modern sub-micron Si LSIs. To characterize such defects, two different techniques are useful: electrically detected magnetic resonance (EDMR) and transmission electron microscope (TEM), which can detect small (point) and extended defects, respectively. We applied EDMR and TEM to the issue of defect-induced leakage currents in dynamic-random-access memory (DRAM) cells. For our DRAM samples (a 0.25- μm-rule series), although TEM showed no extended defects, EDMR successfully detected two types of point defects: V2+O x (Si divacancy-oxygen complexes) and larger Si vacancies (at least larger than V6). We confirmed that these defects are the source of DRAM leakage currents. The observed defects were formed by ion implantation processes, but were more thermally stable than those in bulk Si crystals. The origins of this enhanced stability are attributed to the presence of oxygen atoms and a strong mechanical strain in LSIs. To clarify the origin of the complicated strain in LSI structures, we can directly measure the local-strain distribution in DRAM samples by means of convergent-beam electron diffraction (CBED) using TEM, which provides us with a valuable hint for understanding the formation mechanism of process-induced defects. (Read more)
- 87. Phys. Rev. Lett. 85, 417 (2000) , “Extreme Reduction of the Spin-Orbit Splitting of the Deep Acceptor Ground State of ZnS- in Si”, H. Schroth, K. L. La?mann, S. Vo?, H. Bracht.Electric-dipole spin resonance of the deep acceptor ZnS- in Si reveals close Γ8 and Γ7 ground states with zero-field separation of only 0.31 meV as compared to the 43 meV of the two valence bands. With Landé's formula for the g factors of a 2T2 state split by spin-orbit interaction into Γ8 and Γ7 this nearness can be interpreted as strong quenching of the orbital moment. The observed dependence on the Zn isotopic mass indicates a dynamic contribution of the acceptor atom to the electronic state as is expected for a Jahn-Teller effect. (Read more)
- 88. Phys. Rev. Lett. 73, 1456 (1994) , “Comment on "Electron Paramagnetic Resonance of Molecular Hydrogen in Silicon"”, K. L. Brower, S. M. Myers, A. H. Edwards, N. M. Johnson, C. G. Van de Walle, E. H. Poindexter.Stallinga, Gregorkiewicz, Ammerlaan, and Gorelkinskii report the discovery of anew paramagnetic defect (NL52) in hydrogen-implanted and annealed silicon which they identify as s negatively charged <111> molecular hydrogen interstitial in silicon [1]. We discuss first the inconsistencies in this... (Read more)
- 89. Hyperfine Interactions 84, 397 (1994) , “Studies of divacancy in Si using positron lifetime measurement ”, Studies of divacancy in Si using positron lifetime measurementThe charge state dependence of positron lifetime and trapping at divacancy (V2) in Si doped with phosphorus or boron has been studied after 15 McV electron irradiation up to a fluence of 8.0×1017 e/cm2. The positron trapping cross sections for V2 2-, V2 – and V2 0 at 300 K were about 6×10-14, 3×10-14 and 0.1–3×10-14 cm2, respectively. For V2 + , however, no positron trapping was observed. The marked difference in the cross sections comes from Coulomb interaction between the positron and the charged divacancy. The trapping rates for V2 0 and V2 2- have been found to increase with decreasing temperature in the temperature range of 10–300 K. These results are well interpreted by a two-stage trapping model having shallow levels with energy of 9 meV (V2 0 ) and 21 meV (V2 2- ). The appearance of a shallow level for V2 0 can not be explained by a conventional "Rydberg state" model. The lifetime (290–300 ps) in V2 0 is nearly constant in the temperature range from 10 to 300 K, while that in V2 2- increases from 260 ps at 10 K to 320 ps at 300 K. The lifetime (260 ps) in V2 2- is shorter than that in V2 0 at low temperature, which is due to the excess electron density in V2 2- . At high temperature, however, the longer lifetime of V2 2- than that of V2 0 is attributed to lattice relaxation around V2 2- . (Read more)
- 90. Appl. Phys. A 53, 147 (1991) , “Iron-Aluminum Pairs in Silicon”, S. Greulich-Weber, A. Grger, J. M. Spaeth, H. Overhof.Iron-aluminum pairs in silicon are investigated with conventional and optically detected electron paramagnetic resonance (EPR). For the trigonal and orthorhombic pairs known from previous EPR measurements we found for the first time optical absorption bands by measuring their magnetic circular dichroism of the absorption (MCDA). Direct experimental evidence is presented for the configurational bistability of both pairs by showing that the MCDA of the trigonal configuration can be transformed into that of the orthorhombic configuration by the combined effect of light and temperature. A new trigonal pair was discovered by conventional EPR having the same EPR intensity as the known one. Total energy calculations of various (Fei-Als) pair configurations show that two trigonal (Fei-Als)0 pairs with different Fei-Als separations have almost the same binding energy and should occur with the same probability. Fei + is always on a tetrahedral interstitial site, while Als - is nearest neighbor along <111> in one pair, second nearest neighbor in the other one with one silicon lattice site in between. (Read more)
- 91. J. Electrochem. Soc. 137, 3642 (1990) , “Effects of Heat-Treatments on Electrical Properties of Boron-Doped Silicon Crystals”, Y. Kamiura, F. Hashimoto, and M. YonetaThe effects of heat-treatments around 1000ºC and subsequent annealing on the electrical properties of boron-dopedsilicon have been studied by electrical conductivity, Hall effect, and deep-level transient spectroscopy measurements. Thehigh-temperature heat-treatments always induced net densities of donors. Four recovery stages, stages I–IV, of heat-treatment-induceddonors were observed on isochronal annealing up to 400°C. Conductivity changes in these stages can be explainedas described below by the reactions of interstitial iron (Fei), its pair (FeiBs) with substitutional boron (Bs), and twounknown donors (D1, D2). That is, stage I (25º–100ºC) D1 → sink and Fei + Bs → FeiBs, stage II (100º–150ºC):FeiBs → Fei + Bs, stage III (200º–250ºC): D2 → sink, stage IV (250º–350ºC): Fei → precipitation. Heat-treatments in an oxygenatmosphere greatly reduced the introduction of Fei and FeiBs in comparison with an argon atmosphere and mainly introducedD1 and D2 donors. The density of D2 was dependent on the heat-treatment temperature, while that of D1 showed almostno dependence. In stage I, D1 was annihilated by first-order kinetics with an activation energy of 0.8 eV. It was indicatedthat D1 and D2 have no relations to iron, copper, oxygen, nor carbon. Though their origins are still unidentified, theremay be some interstitial impurities. In stage IV, Fei is suggested to precipitate at oxygen precipitates and dislocation loopsformed by high-temperature heat-treatments. As to the application to iron gettering in the device fabrication process, it isproposed that annealing around 300ºC is most suitable as the final heat-treatment step to remove iron and related defectsfrom active regions of devices. (Read more)
- 92. Hyperfine Interactions 64, 535 (1990) , “Temperature dependence of muon-decay positron channeling in semiconductors ”, Simmler H.1 Eschle P.1 Keller H.1 Kndig W.1 Odermatt W.1 Patterson B. D.1 Pmpin B.1 Savi? I. M.1 Schneider J. W.1 Straumann U.1 and Trul P.1Planar channeling data ofμ +-decay positrons in various semiconductors are reported. Together with the extensive spectroscopic data supplied by transverse μSR, the location of the different states of the hydrogen pseudo-isotopeμ+ e- (muonium) can be identified by means of planar simulations. In high purity silicon as well as in gallium arsenide a thermally activated site transition is observed which can be assigned to a transition between different muonium states. (Read more)
- 93. Hyperfine Interactions 64, 561 (1990) , “Final states in Si and GaAs via RF ?SR spectroscopy ”, Kreitzman S. R.1 Pfiz T.1 Sun-Mack S.2 Riseman T. M.1 Brewer J. H.1 Williams D. Ll.1 and Estle T. L.3The ionization of muonium centers in Si and GaAs have been studied using radio frequency (RF) resonant techniques. In Si all three muonic centers are detectable by RF. No evidence was found for delayed Mu and Mu* states at any temperature. However, our results on the diamagnetic final state (μ f+) show that it is composed of prompt fractions (as seen by conventional μSR) and delayed fractions arising from the ionization of Mu* and Mu. We observe a full μ f+ fraction at 317 K when the Mu relaxation rate is above 10 μs-1. GaAs differs from the situation in Si in that we observed only a partial conversion of Mu* and Mu to a μ+ final state up to 310 K in spite of the fact that the transverse field relaxation rates become very high at 150 and 250 K respectively (Read more)
- 94. Appl. Phys. A 49, 123 (1989) , “Thermal double donors in silicon ”, P. Wagner and J. HageA family of double donors with only slightly differing binding energies can be generated in silicon containing oxygen. In the 30 years since they were discovered the microscopic structure of these defects has not been unravelled in spite of being investigated with all the tools of solid state physics. (Read more)
- 95. J. Electrochem. Soc. 132, 1707 (1985) , “Determination of Conversion Factor for Infrared Measurement of Oxygen in Silicon”, T. Iizuka, S. Takasu, M. Tajima, T. Arai, T. Nozaki, N. Inoue, and M. WatanabeA reliable conversion factor for the infrared absorptiometry of oxygen in silicon has been determined by round-robininfrared measurement followed by charged particle activation analysis with the 16O(3He,p)18F reaction. As for theround-robin samples, 70 dislocation-free CZ silicon wafers with oxygen contents ranging from 3 to 20 × 1017 at.-cm-3 andthicknesses of 2, 1, and 0.5 mm were carefully prepared by five organizations. A good linear relationship has been obtainedbetween the absorption coefficient and the oxygen content. The relationship is expressed as [oxygen concentration (at.-cm-3)] = (3.03 ± 0.02) × 1017 × [absorption coefficient (cm-1)]. (Read more)
- 96. J. Electrochem. Soc. 129, 2292 (1982) , “Effect of Back-Side Oxidation on B and P Diffusion in Si Directly Masked with Si3N4 Films”, Shoichi Mizuo and Hisayuki HiguchiIt is found that the diffusion of B and P in the front surface of float zone Si wafers is enhanced by oxidation of the back-surfaceof the wafers. The range of diffusion enhancement at 1100°C is found to be much larger than previously reportedvalues; the range increases with oxidation time and the range for B agrees well with that for P. Moreover, the results areconsistent with the findings that B and P diffuse only by interstitials and that the range of oxidation-enhanced diffusion isdetermined by the diffusion of interstitials. (Read more)
- 97. phys. stat. sol. (b) 119, K117 (1983) , “Gold-related EPR centres of low symmetry in silicon”, M. Höhne.The most important gold-related centre in silicon works incognito: It produces levels which are well known /1/. The acceptor level EC-0.55 eV and the donor level EV+0.35 eV are caused by different states of the same defect, as was als orecentlr affirmed /2, 3/. This defect is... (Read more)
- 98. J. Electrochem. Soc. 130, 1942 (1983) , “Effects of Back-Side Oxidation of Si Substrates on Sb Diffusion at Front Side”, S. Mizuo and H. HiguchiThe effect of back-side oxidation of Si wafers on the diffusion of Sb in the front of wafers is investigated with back-side selective oxidation (BSO) at 1100ºC in dry O2 ambients. It is found that the diffusion of Sb in the front of the wafers is retarded by BSO only for FZ Si substrates under directly formed Si3N4 films, and that Sb diffusion in CZ Si substrates and under double-layered SiO2-Si3N2\4 films in both FZ and CZ substates is not affected by BSO. The effective range over which BSO affects Sb diffusion is found to increase with oxidation time. The range and extent of oxidation retarted diffusion (ORD) for Sb are shown to agree with those of oxidation enhanced diffusion (OED) for B and P. These results are explained with a proposed model:(i) there is a thermal equilibrium between vacancies and interstitials, and(ii) the Si-SiO2 interface provides sinks and generation centers for point defects in Si, though the Si-Si3N4 interface does not react with point defects. (Read more)
- 99. phys. stat. sol. (b) 104, K79 (1981) , “Changes in the EPR of Gold in Silicon Induced by Light”, M. Höhne, A. A. Lebedev.Since a long time gold is known as a dopant in silicon, which strongly affects recombination processes /1/ and which produces an acceptor level 0.55 eV below the conduction band (CB) and a donor level 0.33 eV above the valence band (VB) /2/. Electric and photoelectric properties were thoroughly... (Read more)
- 100. Phys. Rev. B 17, 4130 (1978) , “Erratum: EPR of a Jahn-Teller Distorted <111> Carbon Interstitialcy in Irradiated Silicon [Phys. Rev. B 9, 2607 (1974)]”, K. L. Brower.Due to a computational error, the numbers in table Ⅲ are incorrect: the corrected Table Ⅲ is listed below: (Read more)
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