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- 701. phys. stat. sol. (b) 90, 301 (1978) , “ESR from Boron in Silicon at Zero and Small External Stress II..Linewidth and Crystal Defects”, H. Neubrand.Observations of the ESR lineshape of the shallow acceptor centre B in silicon at zero external stress are reported. The broadening of two ∆M = 1 transitions can be well fitted by a Voigt profile. The Lorentzian part of the fit is shown to behave in full accordance with the theory of strain... (Read more)
- 702. phys. stat. sol. (b) 86, 269 (1978) , “ESR from Boron in Silicon at Zero and Small External Stress I.. Line Positions and Line Structure”, H. Neubrand.ESR observations at zero external stress of the shallow acceptor centre boron in silicon are reported for the first time. These observations have become possible by the high degree of crystal perfection attainable today in Si-crystal growth. The spectrum, its angular and uniaxial pressure dependence... (Read more)
- 703. phys. stat. sol. (b) 86, 119 (1978) , “Nonrandom Strain in "crushed" silicon. EPR of thermally excited lithium donors”, M. Höhne.Si:Li single crystals with crushed surface layers are investigated by EPR. Measurements at 1.5 K show that these layers, which contain in the outer part also the dangling bond centre with g = 2.0055, nearly preserve their crystalline order, but exhibit strains preferentially perpendicular to the... (Read more)
- 704. phys. stat. sol. (b) 85, 525 (1978) , “EPR of Lithium in Mechanically Affected Silicon”, M. Höhne.An intense narrow EPR spectrum is observed at 20 and 1.5 K in lithium doped silicon, which has been mechanically affected. The spectrum exhibits an angular dependent, only partly resolved structure. The spectra at the different temperatures can be explained by assuming lithium donors in rhombic... (Read more)
- 705. Solid State Commun. 28, 221 (1978) , “On the Production of Paramagnetic Defects in Silicon by Electron Irradiation”, E. G. Sieverts, S. H. Muller and C. A. J. AmmerlaanMonocrystalline silicon samples of different impurity contents have been irradiated with 1.5 MeV electrons in order to produce divacancies in their negative charge state. In these samples different combinations of defects have been observed with electron paramagnetic resonance. The conditions for... (Read more)
- 706. Solid State Commun. 27, 867 (1978) , “Localization of the Fe0-Level in Silicon”, H. Feichtinger, J. Waltl and A. GschwandtnerSilicon samples were quenched from 1250°C – 1300°C and the 95K Fermi level was calculated from Hall effect data. The same samples were used to determine the intensity of the EPR spectrum at 95K associated with the iron interstitial (Fe°). In carefully selected samples, complete or... (Read more)
- 707. Solid State Commun. 25, 987 (1978) , “EPR Spectra of Heat-Treatment Centers in Oxygen-Rich Silicon”, S. H. Muller, M. Sprenger, E. G. Sieverts and C. A. J. AmmerlaanAfter heat-treatment of oxygen-rich silicon at 410–550 °C ten different EPR spectra were observed. Nine of these are new spectra, seven of them reveal 2mm symmetry for the corresponding heat-treatment center, thereby reducing considerably the number of possible atomic configurations. In... (Read more)
- 708. Appl. Phys. Lett. 31, 142 (1977) , “EPR of a Thermally Induced Defect in Silicon”, Y. H. Lee, R. L. Kleinhenz, and J. W. CorbettTwo EPR spectra are resolved in quenched silicon; one is attributed to a surface damage formed during the quench and the other to the interstitial iron (Fe0) previously identified by Woodbury and Ludwig in Fe-diffused silicon. The enthalpy and entropy for the Fe0 formation are... (Read more)
- 709. Phys. Lett. A 60, 55 (1977) , “Oxygen-vibrational bands in irradiated silicon*1”, Y. H. Lee, J. C. Corelli, J. W. Corbett.A correlation is made between the EPR spectra and the IR absorption bands for the known multivacancy-oxygen complexes in irradiated silicon. (Read more)
- 710. Phys. Rev. B 15, 3836 (1977) , “Defect Energy Levels in Boron-Doped Silicon Irradiated with 1-MeV Electrons”, P. M. Mooney, L. J. Cheng, M. Sli, J. D. Gerson, and J. W. CorbettUsing transient capacitance spectroscopy, we studied defect energy levels and their annealing behavior in boron-doped silicon of various resistivities irradiated with 1-MeV electrons at room temperature. Three levels located at Ev+0.23, Ev+0.38, and Ec-0.27 eV... (Read more)
- 711. phys. stat. sol. (a) 41, K21 (1977) , “Anisotropic Broadening of Linewidth in the EPR Spectrum of Fe0 in Silicon”, W. Gehlhoff, K. H. Segsa.Measurements of temperature dependances of the Hall coefficient and resistivity in iron doped sillicon crystals slow that iron acts as a donor impurity, introducing a converts to a donor level 0.4 eV from the valence band. This level is unstable at room temperature and converts to a donor level 0.55... (Read more)
- 712. phys. stat. sol. (a) 41, 637 (1977) , “EPR of a Carbon-Oxygen-Divacancy Complex in Irradiated Silicon”, Y. H. Lee, J. W. Corbett, K. L. Brower.Additional EPR experiments on the Si-G15 spectrum, previously observed in p-type, pulled silicon after electron irradiation, are described. The hyperfine interaction with the 29Si nuclei and the quenched-in defect alignment under uniaxial stress are newly observed. A correlation is made... (Read more)
- 713. phys. stat. sol. (a) 39, 11 (1977) , “Photoelectric Spectroscopy - A New Method of Analysis of Impurities in Semiconductors”, Sh. M. Kogan, T. M. Lifshits1. Introduction 2. The photothermal ionization of impurities in semiconductors 3. The excitation energies of impurities in germanium and silicon 4. The analysis of impurities in crystals 4.1 Germanium 4.2 Silicon 4.3 Gallium arsenide 4.4... (Read more)
- 714. Radiation Effects in Semiconductors 31, 266-271 (1977) , Institute of Physics, Bristol , “Electron Paramagnetic Resonance of Point Defects in Deformed Silicon”, E. Weber, H. Alexander.
- 715. Radiation Effects in Semiconductors 31, 213-220 (1977) , Institute of Physics, Bristol , “Electron Paramagnetic Resonance of New Defects in Heavily Phosphorus-Doped Silicon after Electron Irradiation”, E. G. Sieverts, C. A. J. Ammerlaan.
- 716. Radiation Effects in Semiconductors 31, 174-185 (1977) , Institute of Physics, Bristol , “Heavy-Dose Ion Implantation”, K. Masuda.
- 717. Rev. Sci. Instrum. 48, 135-141 (1977) , “EPR Techniques for Studying Defects in Silicon”, K. L. Brower.Due to long spin-lattice relaxation times and low defect concentrations, the EPR study of defects in irradiated silicon requires special experimental capabilities. The superheterodyne spectrometer described in this paper, which has been used in numerous defect studies, can detect 1010... (Read more)
- 718. Appl. Phys. Lett. 29, 265 (1976) , “EPR Evidence for a Positively Charged Vacancy-Oxygen Defect in Silicon”, Paul R. BrosiousA new EPR spectrum, labeled Si-I3, has been observed in electron-irradiated n-type Czochralski silicon illuminated with approximately band-gap light. The g-tensor symmetry, the g shifts from the free-electron value, and the temperature dependence of the spectrum amplitude lead to the... (Read more)
- 719. J. Magn. Res. 21, 387 (1976) , “The Divacancy in Silicon: Spin-Lattice Relaxation and Passage Effects in Electron Paramagnetic Resonance”, C. A. J. Ammerlaan, A. van der Wiel.The longitudinal spin-lattice relaxation time T1 of the divacancy in silicon, in its positively charged state, was determined in the temperature region between 10 and 30 K. The study was made by measuring the line shape and amplitude of the electron paramagnetic resonance spectrum of V+2 (the Si-G6 spectrum) in a static magnetic field of 8.24 kOe. the passage conditions in observing the resonances were varied through the transition from adiabatic fast (ωmT1 > 1) to adiabatic slow (ωmT1 < 1) with respect to the audiofrequency (ωm) modulation field. Explicit formulas are derived to describe line shape and amplitude of the resonance in the transition region around ωmT1 = 1. The spin-lattice relaxation time found is given by T1(s) = 3.4 × 105 × T(K)-6.6, which demonstrates that the Raman two-phonon process is the active relaxation mechanism..
- 720. J. Phys. Soc. Jpn. 41, 711 (1976) , “Electron Spin Relaxation Time of Phosphorus-Doped Silicon”, H. Nagashima, H. Yamazaki.The decay time of induced magnetization Mz of donor electrons is observed for (Si:P) samples having impurity concentrations 5.6×1017 ≤ Nd 2.7×1018 donors / cm3 in the 1.2-4.2 K temperature range. The results show that the spin-lattice relaxation time T1 increases with increasing donor concentration and becomes so close to the spin-spin relaxation time T2 in the intermediate concentration region of transport phenomena. (Read more)
- 721. Phys. Lett. A 59, 238 (1976) , “An EPR study of optical absorption of the oxygen-vacancy pair in electron-irradiated silicon*1”, Y. H. Lee, J. C. Corelli, J. W. Corbett.The negative charge state of the vacancy-oxygen pair (Si-B1) in irradiated silicon was populated by illumination with polarized light, from which the direction of the electric dipole moment was determined to be near 110 perpendicular to the (Si-O-Si) bond axis. Energy dependence of the alignment... (Read more)
- 722. Phys. Rev. B 14, 872-883 (1976) , “EPR of a <001> Si interstitial complex in irradiated silicon”, K. L. Brower.This paper deals with an electron-paramagnetic-resonance study of the Si-B3 center, which was first reported by Daly. The Si-B3 center is a secondary defect which forms upon annealing between 50 and 175C in irradiated boron-doped silicon and is stable up to ?500C. Our studies indicate that the... (Read more)
- 723. Phys. Rev. B 14, 4506 (1976) , “EPR study of neutron-irradiated silicon: A positive charge state of the <100> split di-interstitial”, Young-Hoon Lee, Nikolai N. Gerasimenko, and James W. CorbettThe Si-P6 spectrum shows an intrinsic tetragonal symmetry with the C2 axis along ?100? and distortion forces the principal axes of the g tensor to be displaced in the {100} plane. The g tensor previously identified by Jung and Newell was found to be due to the motionally averaged state... (Read more)
- 724. Phys. Rev. B 14, 3494 (1976) , “Divacancy in Silicon: Hyperfine Interactions from Electron-Nuclear Double Resonance Measurements”, J. G. de Wit, E. G. Sieverts, and C. A. J. AmmerlaanThe Si-G6 EPR spectrum, which is associated with the positive charge state of the divacancy in silicon, was investigated by electron-nuclear double resonance. Hyperfine tensors describing the interaction between the unpaired divacancy electron and 29Si nuclei were determined. With these... (Read more)
- 725. Phys. Rev. B 13, 2653 (1976) , “EPR Studies of Defects in Electron-Irradiated Silicon: A Triplet State of Vacancy-Oxygen Complexes”, Young-Hoon Lee and James W. CorbettThree new EPR spectra (Si-A 14, -A 15,and-A 16) and two previously known spectra (Si-P2and-P4) are observed for the first time in electron-irradiated silicon. The microscopic defect models are established as multivacancy-oxygen complexes with the oxygen(s) in Si-O-Si structure inside the ... (Read more)
- 726. Phys. Rev. B 13, 2511 (1976) , “EPR of a Trapped Vacancy in Boron-Doped Silicon”, G. D. Watkins.An S=1/2 EPR spectrum, labeled Si-G10, is tentatively identified as a lattice vacancy trapped by substitutional boron in silicon. It is produced in boron-doped vacuum floating-zone silicon by 1.5-MeV-electron irradiation at 20.4 K followed by an anneal at ? 180 K, where the isolated vacancy... (Read more)
- 727. Phys. Rev. Lett. 36, 1329 (1976) , “EPR Observation of the Isolated Interstitial Carbon Atom in Silicon ”, G. D. Watkins and K. L. BrowerAn EPR spectrum, labeled Si-G12, is identified as arising from an isolated interstitial carbon atom in silicon. A ?100? C-Si interstitialcy model is suggested for the defect in which a silicon and carbon atom pair partially share single substitutional site. Because carbon is isoelectronic with... (Read more)
- 728. Radiat. Eff. 29, 7 (1976) , “Photo-EPR Experiments on Defects in Irradiated Silicon”, Y. H. Lee, T. D. Bilash, J. W. Corbett.The defect electrical levels for eight EPR spectra (Si-A10, -A14, -A15, -A16, -G7, -G16, -P2, -P4) are determined from optical bleaching experiments via electron paramagnetic resonance. The defect energy levels are all located near the middle of the band gap in between Ec -0.40 eV and Ev +0.40 eV.
- 729. Solid State Commun. 20, 881 (1976) , “ESR in Iron Doped Silicon Crystals under Stress”, M. Berke, E. Weber and H. AlexanderH. Luft and B. ElschnerThe spin lattice coefficients C11 and C44 characterizing the crystal field under stress are measured for neutral iron at interstitial sites in silicon. The coefficients are one order of magnitude larger than for Fe3+ in MgO. Both C11 and C44 turn out to be negative. (Read more)
- 730. Solid-State Electronics 19, 611 (1976) , “Thermal Emission Rates and Activation Energies of Electrons at Tantalum Centers in Silicon”, Kenji Miyata and C. T. SahThe thermal emission rates and activation energies of electrons trapped at the two Ta donor centers in n-type silicon are determined from transient capacitance measurements on Schottky barrier diodes made on phosphorus and tantalum doubly doped silicon crystals. The thermal activation energies are... (Read more)
- 731. Sov. Phys. Semicond. 10, 1339 (1976) , “Radiation Damage in Silicon Resulting from Complete Stopping of 30 MeV Protons”, Yu. V. Gorelkinski?, V. O. Sigle, V. A. Botvin.The ESR method was usedin a study of radiation defects created in single-crystal silicon by 30 MeV protons. The distribution of the paramagnetic centers was determined as a function of the proton energy between 30 and ~10 MeV. It was established that in this range of energies the rates of introduction of centers with high (~10 keV) and low (~100 eV) threshold energies of formation were independent of the proton energy. The structure of the radiation damage was determined by investigating the ESR spectra of samples with high phosphorus concentrations (~1017-1018 cm-3) after irradiation with various proton doses. For comparison, measurements were made also on silicon samples irradiated with fast reactor neutrons. The probabilities of formation of disordered regions by recoil nuclei of energies exceeding ~10 keV were approximately equal in the proton (30 MeV) and neutron irradiation cases. However, when silicon was bombarded with protons, about 80% of the divacancies (Si-G7 centers) formfed were located outside the disordered regions.
- 732. Sov. Phys. Solid State 18, 190 (1976) , “EPR of Phosphorus in Silicon”, P. Swarup, P. L. Trivedi.Experimental values of the exchange integral are presented for phosphorus-doped silicon, at various phosphorus concentration, and are compared with the theory. It is shown that the observed temperature dependence of the EPR linewidth in these samples can be attributed to a phonon-induced admixture of excited states to the ground state of the impurity center. The proposed mechanism is compared with the mechanism of dynamic narrowing due to hopping. We have analyzed the EPR spectra of silicon single crystals doped with phosphorus in the concentration range from 2・1017 to 2・1018 cm-3, at temperatures from 2º to 20ºK.1 It was observed that the EPR line of phosphorus has a Lorentz shape at all concentrations and temperatures. Estimates of the exchange integrals at various impurity concentrations were obtained from the experimental data on the EPR linewidth. It is shown that the temperature dependence of the linewidth confirms the conclusion that an admixture of excited orbital states of the impurity centers to the ground state is induced by the phonons and that the exchange integral depends on temperature. The proposed mechanism is compared with the mechanism of dynamic narow connected with hopping.2
- 733. Lattice Defects in Semiconductors 23, 433-438 (1975) , Institute of Physics, London , “The EPR Spectra in Silicon with Dislocations”, H. Alexander, M. Kenn, B. Nordhofen, E. Weber.Plastic deformation introducing about 109cm-2 dislocations in silicon gives rise to a complex EPR signal. It consists of a group of central lines around g = 2 and a zero field splitting multiplet of 14 pairs of lines. At low temperature (≤30 K) the g tensor of the four most prominent central lines was determined. The lines belong to the same (broken bond type) centre Si-K1 in diffeerent orientations. The axes of this centre are oriented in an unusual manner. beginning at 60 K additional central lines appear, one of which can be ascribed to the existence of dangling bonds normal to the glide plane of the dislocations. The fine structure multiplet is due to a centre (Si-K2) with its g axes parallel to [011],[011],[100];[011] is the direction of the Burgers vector of most of the dislocations and the axis of a nearly axially symmetric D tensor. The splitting parameter changes strongly with temperature between 60 K and 225 K, where the multiplet disappears. Possible causes for the splitting are discussed.
- 734. Lattice Defects in Semiconductors 23, 126-148 (1975) , Institute of Physics, London , “Lattice Defects in Ion-Implanted Semiconductors”, L. C. Kimerling, J. M. Poate.This paper summerizes the current status of ion implantation damage research in semiconductors. We have attempted to review the recent interesting measurements and theories. the damage process is traced from the production mechanism to the structural and electrical properties of the defects and their annealing characteristics. Defect-impurity interactions and lattice site location of the implanted ion are discussed. New areas of research such as enhanced diffusion, gettering and mixing phenomena are discussed.
- 735. Lattice Defects in Semiconductors 23, 1-22 (1975) , Institute of Physics, London , “EPR Studies of the Lattice Vacancy and Low-Temperature Damage Processes in Silocon”, G. D. Watkins.EPR studies of silicon irradiated at 20.4 K and 4.2 K by 1.5 MeV and 46 MeV electrons are described. In 46 MeV irradiations the dominant defects formed appear to be divavancies and other multiple defect aggregates which liberate vacancies throughout the anneal to room temperature as they reorder, recombine, etc. For 1.5 MeV irradiations group III atoms play a vital role in p- and n-type materials in trapping interstitials and stabilizing damage. Carbon and oxygen are not effective interstitial traps at these temperatures. Evidence of limited vacancy migration during irradiation is also cited. Two distinct excited configurations of vacancy-oxygen pairs are identified as precursors to A-centre formation in n-type silicon. The kinetics for their conversion to A-centres depends strongly upon the Fermi level as does the isolated vacancy migration energy whhich is measured to be 0.18 ± 0.02 eV for the V= charge state. The vacancy has four charge states, V+, V0, V- and V=. Kinetics for hole release from V+ reveals an activation barrier of 0.057 eV. The concentration of V+ at 20.4 K in boron-doped material indicates the corresponding donor level even closer to the band edge, approximately EV + 0.039 eV. Jahn-Teller energies for V0, V+, and V- are estimated from stress-alignment studies and confirmed to be large. Kinetics studies for reorientation from one Jahn-Teller distortion to another are also described for each charge state.
- 736. Phys. Rev. B 12, 5824 (1975) , “Defects in Irradiated Silicon: EPR and Electron-Nuclear Double Resonance of Interstitial Boron”, G. D. Watkins.An EPR spectrum, labeled Si-G28, is identified as arising from neutral interstitial boron in silicon. It is produced by 1.5-MeV electron irradiation at 20.4K, presumably when a substitutional boron atom traps a mobile interstitial silicon atom which is produced in the original damage event. Three... (Read more)
- 737. Phys. Rev. B 12, 4383 (1975) , “Defects in Irradiated Silicon: EPR of the Tin-Vacancy Pair”, G. D. Watkins.An EPR spectrum, labeled Si-G29, is identified as a lattice vacancy trapped by substitutional tin. The resulting tin-vacancy pair is observed in its neutral ground state with S=1. Studies versus wavelength of illumination indicate that it has a donor level at ?Ev+0.35 eV. Analysis of the... (Read more)
- 738. Phys. Rev. B 11, 822 (1975) , “Ground-State Wave Function for Shallow-Donor Electrons in Silicon. I. Isotropic Electron-Nuclear-Double-Resonance Hyperfine Interactions”, J. L. Ivey, R. L. Mieher.In a new theoretical investigation of electrons bound to the shallow-donor impurities (P, As, Sb) in silicon we have calculated the Fermi-contact hyperfine-interaction constants for the Si29 lattice nuclei surrounding the impurity nucleus. We have used a model potential which represents... (Read more)
- 739. Solid State Commun. 16, 171 (1975) , “On the Role of Defect Charge State in the Stability of Point Defects in Silicon”, L. C. Kimerling, H. M. DeAngelis, J. W. Diebold.Defect annealing in 1-MeV electron-irradiated, phosphorus-doped silicon is studied. Charge state effects are explored directly using a p-n junction structure. A defect state which is associated with the E center (phosphorus-vacancy pair) is found to disappear at approximately 150°C with an... (Read more)
- 740. Sov. Phys. JETP 42, 1073 (1975) , “ESR and Spin Relaxation of Deep Centers in Semiconductors in the Presence of Photoelectrons (Si:Fe0)”, M. F. De?gen, V. Ya. Bratus, B. E. Vugme?ster, I. M. Zaritski?, A. A. Zolotukhin, A. A. Konchits, L. S. Milevski?.An investigation was made of the influence of photoelectrons on the ESR and spin relaxation of deep centers in semiconductors in the specific case of Si:Fe0. It was established that the appearance of conduction electrons generatd by optical illumination reduced the ESR signal intensity and gave rise to photoelectron-stimulated spectral diffusion in an inhomogeneously broadened ESR line of Fe0.Heating photoelectronsby an electric field resulted in a further reduction in the ESR signal of Fe0 because of an increase in the effective temperature of the photoelectrons. The observed behavior was explained by exchange scattering of photoelectrons on Fe0 center. Allowance for photoelectron recombination process made it possible to explain the reduction in the ESR signal whhich occurred as a result of optical illumination. A new mechanism of spectral diffusion in inhomogeneously broadened ESR lines was suggested: this diffusion was due to double exchange scattering of carriers by paramagnetic centers. A comparison of the theory with experiment yielded the cross section for the exchange scattering of electrons by Fe0 impurities and the dependence of the spin-lattice relaxation time of hot photoelectrons on their effective temperature.
- 741. Sov. Phys. Semicond. 9, 1303 (1975) , “Characteristics of Radiation Damage in Silicon Bombarded with U235 Fission Fragments”, Zh. S. Takibaev, Yu. V. Gorelkinskii, V. F. Grishchenko, N. N. Gerasimenko.the ESR method was used in a study of the properties of radiation defects in silicon bombarded with U235 fission fragments. The source of these fragments was uranium dioxide irradiated, together with silicon, by reactor neutrons. It was established that the main defects generated by fission fragments were tetravacancies (called Si-P3 centers) and centers associated with amorphization (VV centers). An analysis of the distribution function of the concentration of paramagnetic centers demonstrated that individual fission fragments were capable of creating point defects in densities sufficient for the formation of an isolated amorphous region in Si. A continuous amorphous layer near the surface of an Si crystal was observed when the fission fragment density was ~1015cm-2. An estimate was obtained of the rate of introduction of paramagnetic centers whose average value was ~104cm-1 per fragment. The ESR signal disappeared completely after annealing at ~600℃.
- 742. Sov. Phys. Semicond. 8, 1049 (1975) , “Interaction of Hydrogen Atoms and Radiation Defects in the Case of H+ Ion Implantation in Silicon”, V. A. Botvin, Yu. V. Gorelkinskii, V. A. Kudryashev, V. O. Sigle.In an earlier paper1 we demonstrated that paramagnetic defects (Si-B2) were formed as a result of implantation of hydrogen ions in silicon single crystals. We also showed that implanted hydrogen atoms participated in the formation of these defects. Additional experiments were carried out in order to determine the interaction between the implanted hydrogen atoms and defects and to find the influence of these atoms on the recovery of the carrier density.
- 743. J. Appl. Phys. 45, 3023 (1974) , “Deep-level transient spectroscopy: A new method to characterize traps in semiconductors”, D. V. LangA new technique, deep-level transient spectroscopy (DLTS), is introduced. This is a high-frequency capacitance transient thermal scanning method useful for observing a wide variety of traps in semiconductors. The technique is capable of displaying the spectrum of traps in a crystal as positive and... (Read more)
- 744. J. Appl. Phys. 45, 3014 (1974) , “Fast capacitance transient appartus: Application to ZnO and O centers in GaP p-n junctions”, D. V. LangNew techniques and apparatus are presented which overcome some of the limitations of previous capacitance transient techniques and extend the useful range of capacitance transient measurements to intermediate depth impurity and defect states in semiconductors. This development greatly enhances the... (Read more)
- 745. Phys. Lett. A 49, 425 (1974) , “An orientation-dependent defect in ion-implanted silicon*1”, Y. H. Lee, P. R. Brosious, J. W. Corbett.A new EPR spectrum is resolved in the N+-implanted silicon, and this center can be produced only by the (110) channeling ions in the region underneath the amorphous layer. (Read more)
- 746. Phys. Rev. B 9, 4351-4361 (1974) , “EPR study of defects in neutron-irradiated silicon: Quenched-in alignment under <110>-uniaxial stress”, Young-Hoon Lee and James W. CorbettThe stress effect in an EPR study is first treated rigorously in terms of the piezospectroscopic tensor, taking account of the local symmetry of a defect. It is found that the degree of alignment (n?/n?) provides incisive information on the structure of a defect; in general, a... (Read more)
- 747. Phys. Rev. B 9, 2607 (1974) , “EPR of a Jahn-Teller distorted (111) carbon interstitialcy in irradiated silicon”, K. L. Brower.An electron-paramagnetic-resonance (EPR) study of irradiated, p-type silicon doped with carbon enriched with 13C has revealed that the Si-G11 spectrum possesses a 13C hyperfine structure. Owing to the complexity and lack of resolution in the observed spectrum, we found it... (Read more)
- 748. Phys. Rev. Lett. 33, 1164 (1974) , “Nonlinear, Self-Consistent Theory of Proton Screening in Metals Applied to Hydrogen in Al and Mg ”, Z. D. Popovic* and M. J. StottThe density-functional formalism has been used to treat self-consistently the nonlinear screening of a proton in an electron gas. The results have been used to calculate activation energies for diffusion of hydrogen in Al and Mg. The theory is in good agreement with experimental results which are... (Read more)
- 749. phys. stat. sol. (a) 22, K55 (1974) , “EPR of Conduction Electrons Produced in Silicon by Hydrogen Ion Implantation”, Yu. V. Gorelkinskii, V. O. Sigle, Zh. S. Takibaev.It has been observed using electrical measurements that proton bombardment at room temperature followed by annealing at about 300ºC produced shallow donors in silicon with a donor ionization energy of 26 meV (1,2). This note reports first EPR measurements on conduction electrons produced in Si by... (Read more)
- 750. Radiat. Eff. 22, 169 (1974) , “New EPR Spectra in Neutron-Irradiated Silicon (II)”, Y. H. Lee, P. R. Brosious, J. W. Corbett.Four new EPR spectra, arising from intrinsic defects in silicon created by neutron-irradiation, are resolved. Each spectrum is briefly discussed. Further detailed studies are required to establish defect models.
- 751. Solid State Commun. 15, 1781 (1974) , “EPR evidence of the self-interstitials in neutron-irradiated silicon*1”, Y. H. Lee, J. W. Corbett.Detailed studies on Si---P6 spectrum show that the spectrum has an unusual g-tensor symmetry (monoclinic II) and a large stress alignment (n/n|| = 17). A number of defect models for this spectrum were considered; two (<100> split-interstitial and <100> di-interstitial) are briefly discussed here.... (Read more)
- 752. Solid State Commun. 14, 735 (1974) , “On the Magnetic Properties of Dislocations in Silicon”, U. Schmidt, E. Weber, H. Alexander, W. Sander.The anisotropy of a group of equidistant lines in the EPR spectrum of plastically deformed Si can be described as line splitting in a nearly axial crystal field, the axis being parallel to the Burgers vector of the dislocations. We suppose that the spins of the unpaired electrons in the core of the... (Read more)
- 753. Sov. Phys. JETP 39, 721 (1974) , “Investigation of the Properties of the Dislocation EPR Spectra in Silicon”, S. V. Broude, V. A. Grazhulis, V. V. Kveder, Yu. A. Osipyan.We investigated the properties of the dislocation sEPR spectra in Si in the temperature interval from 1.3 to 150ºK. At helium temperatures we observed anomalies in the behavior of the dispersion signals χ' under conditions of adiabatic rapid passage (APR) through resonance. It is shown that the spectrum of the D centers has a hyperfine (hf) structure, with a line width ∆Hi ~0.2-0.3 Oe (the distance between neighboring hf lines is of the order of their width). It is established that under ARP conditions excitations are transferred between the hf lines as a result of spin-spin interactions with a characteristic time τ3, equal to 3-10 sec in the range 1.3-4.2ºK and weakly dependent on the temperature and on the microwave power. We measured the dependence of the integrated intensity of the absorption signals χ'' on the temperature in the 20-150ºK range. A strong deviation from the Curie low was observed at T=40-50ºK. The temperature dependence of the quantity τ1τ2 was measured in the same temperature range, under the assumption that the hf lines have a Lorentz shape. An anomaly at T=40-50ºK was observed also on the plot of τ1τ2=f(1/T). It is concluded that a magnetic phase transition takes place in the D-center system at 40-50ºK, and consequently the dislocations in Si can be regarded as models of one-demensional chain of spins with exchange interactions.
- 754. Infra-red studies of crystal defects 1-169 (1973) , Taylor and Francis,London , R. C. NewmanFOREWORD PREFACE 1. INTRODUCTION 2. INFRA-RED ABSORTION FROM A LATTICE CONTAINING POINT DEFECTS. 2.1. Normal Models of Vibration. 2.1.1. The one-dimensional linear chain. 2.1.2. The three-dimensional problem. 2.2. Infra-red Absorption due to Defects in Homopolar Crystals. 2.3. Absorption Measurements. 3. VIBRATIONS OF AN ANHARMONIC LOCAL OSCILLATOR. 3.1. The Sperical Oscillator (R3±Symmetry). 3.2. The Cubic Oscillator. 3.2.1. Oh Symmetry. 3.2.2. Td Symmetry. 3.3. The Trigonal Oscillator. 3.3.1. C3v Symmetry. 3.3.2. D3d Symmetry. 3.4. The Tetragonal Oscillator. 3.4.1. C4v Symmetry. 3.4.2. D4h Symmetry. 3.5. Resume and Result for other Point Symmetries. 4. LOCALIZED VIBRATIONS OF HYDROGEN AND DEUTERIUM IN THE ALKALINE EARTH FLUORIDES. 4.1. Isolated H- and D- Ions on F- Sites (Td Symmetry). 4.1.1. Reductions in symmetry due to the application of a uniaxial stress or an eletric field. 4.2. Other Local Mode Absorption due to H- Ions in Normally Undoped Crystals. 4.3. H- Ions in Crystals containing Rare-earth Ions. 4.3.1. Compensation of R.E.3+ by interstitial H- ions. 4.3.2. Divalent rare-earth hydrogen pairs. 4.3.3. R.E.3+-H- complexes in crystals containing oxygen. 4.4. Other Effects of Irradiation and Absorption due to Neutral Hydrogen. 4.5. The Electron-Phonon Interaction for a Rare-earth Hydrogen pair. 5. HYDROGEN IONS IN ALKALI HALIDE CRYSTALS. 5.1. Pure Crystals. 5.2. U centres in Mixed Halides. 5.2.1. Experimental observations. 5.2.2. Theoretical models. 5.3. Interstitial H- ions. 6. ONE-PHONON INFRA-RED ABSORPTION IN SILICON. 6.1. Neutral Impurities. 6.1.1. Isolated interstitial oxygen. 6.1.2. Absorption due to isolated substitutional impurities. 6.2.2. Boron paired with substitutional impurities. 6.2.3. Boron paired with lithium. 7. IRRADIATION DAMAGE IN SILICON. 7.1. The Oxygen-vacancy Centre. 7.2. Carbon-doped Silicon. 7.3. Germanium-doped Silicon. 7.4. Boron-doped Silicon. 7.5. Neutron Irradiations. 7.6. Ion-implantation studies. 7.7. Concluding Remarks. 8. ONE-PHONON ABSORPTION IN GERMANIUM. 8.1. Neutral Impurities. 8.1.1. Substitutional elements. 8.1.2. Oxygen impurities. 8.2. Electrically Active Impurities. 8.3. Irradiation Damage Bands. 9. COMPOUND III-V SEMICONDUCTORS. 9.1. GAllium Phosphide. 9.2. Gallium Arsenide. 9.2.1. Silicon and boron-doped crystals. 9.2.2. Lithium and copper-diffused crystals. 9.2.3. Crystals containing other impurities. 9.2.4. Ion implantation and other impurities. 9.3. Local Mode Absorption in other III-V Compounds. 9.4. Compensation of Experimental Results with Theory. REFERENCES
- 755. J. Appl. Phys. 44, 4243 (1973) , “Electron Spin Resonance in Argon-Ion-Implanted Silicon”, K. -C. Chu, W. R. Hurren, E. Hale, J. Reigle.A new paramagnetic center with g = 2.0029 is observed, in both n- and p-type silicon after they are heavily implanted (higher than 1017 ions/cm2) with 150-keV argon ions. ©1973 American Institute of Physics ... (Read more)
- 756. Jpn. J. Appl. Phys. 12, 1307 (1973) , “ESR Studies on Defects and Amorphous Phase in Silicon Produced by Ion Implantation”, K. Murakami, K. Masuda, K. Gamo, S. Namba.Paramagnetic defects have been studied over a wide dose range. At doses>6×1014 P+/cm2, only one isotropic spectrum of g=2.0062±0.0004 which characterizes a continuous amorphous layer is observed. At doses between 0.1 and... (Read more)
- 757. Phys. Lett. A 45, 5 (1973) , “Stress Dependence of g-Tensor for Boron Acceptor in Silicon”, T. Shimizu, N. Tanaka.Nonlinear stress dependences of g|| and g are observed for B acceptor in Si. Two possible explanations are made based on the theory of Bir et al. and that of Morgan. (Read more)
- 758. Phys. Rev. B 8, 3836 (1973) , “Quantitative Piezospectroscopy of the Ground and Excited States of Acceptors in Silicon”, H. R. Chandrasekhar, P. Fisher, A. K. Ramdas, and S. RodriguezA piezospectroscopic study of the excitation lines from the ?8 ground state to the first two ?8 excited states of the p3/2 series of boron, aluminum, and indium (lines 1 and 2) and to the first ?6 excited state of boron (2p? line) has been made... (Read more)
- 759. Phys. Rev. B 8, 2810 (1973) , “EPR Studies in Neutron-Irradiated Silicon: A Negative Charge State of a Nonplanar Five-Vacancy Cluster (V5-)”, Y. H. Lee, J. W. Corbett.EPR studies are carried out for the float-zone intrinsic silicon irradiated with reactor neutrons up to the total fluence 1018 n/cm2. Details of the Si29 hyperfine structure and of the g tensor in the P-1 spectrum are observed with respect to temperature from 77 to... (Read more)Si| EPR neutron-irradiation| 29Si P1 Silicon cluster(>3) vacancy .inp files: Si/V5- | last update: Takahide Umeda
- 760. Phys. Rev. B 7, 4547 (1973) , “Raman Scattering and Photoluminescence in Boron-Doped and Arsenic-Doped Silicon”, J. M. Cherlow, R. L. Aggarwal, and B. LaxThe deformation potentials and g values of the ground state of the boron acceptor in silicon have been determined from a study of the stress and Zeeman splitting of the electronic Raman scattering in this material. The stress splitting of the Raman line results from a twofold splitting of the... (Read more)
- 761. Phys. Rev. B 7, 2630 (1973) , “A Comparative Electron-Spin-Resonance Study of the Ground State and a Photoconverted Metastable State of the Mg+ Donor in Silicon”, J. E. Baxter, G. Ascarelli.Magnesium diffused into silicon forms a deep-double-donor state. Depending on the compensation, the distinct valence states Mg0, Mg+, or Mg++ are possible. EPR measurements have been performed at 55 GHz on the paramagnetic valence state Mg+ at... (Read more)
- 762. Radiation damage and defects in semiconductors 284 (1973) , The Institute of Physics,London, , “The influence of oxygen and acceptor impurities on the annealing of radiation defects in p-type silicon ”, V.S Vavilov,B.N Mukashev,A.V SpitsynBoth crucible-grown and float-zoned p-type silicon crystals, doped either with boron, gallium or aluminium, were irraadiated at 78 or 300 K by 1.5 MeV electrons and then were annealed at temperatures up to 700 K. Data on the concentration of radiation defects and their energy levels were derived from Hall coefficient and conductivity measurements. In the lowest oxygen content samples, a prominent carrier concentration recovery stage,located at T>360 K, was observed and was observed and was shown to be associated with annealing of the Ev+0.45 eV level radiation defects. The annealing activation energy increased practically linearly with the atomic size of the impurity. Therefore it is suggested that the defects in question are complexes of vacancies with acceptor impurity atoms.
- 763. Sov. Phys. Semicond. 6, 1453 (1973) , “Paramagnetic Centers in Silicon Irradiated with Heavy Charged Particles”, V. A. Botvin, Yu. V. Gorelkinskii, V. O. Sigle, M. A. Chubisov.The ESR method was used to study paramagnetic centers generated in silicon single crystals by irradiation with 37-MeV α particles or 9-MeV protons at 273ºK. The experiments were carried out on silicon grown by the floating-zone and Czochralski methods and doped with P31, B11, and A27. The existence of Si-P3, Si-P1, Si-P4, Si-P5, Si-S1 (Si-B2), and Si-S2 centers was established in the proton-irradiated samples. The Si-S1 and Si-S2 centers were not found in the α-irradiated silicon. The characteristics of isochronous annealing of the various centers were determined. The distribution of the paramagnetic centers along the trajectories of the incident particles was determined by successive removal of silicon layers from the irradiated side. The rates of introduction of the paramagnetic centers by α particles and protons were estimated.
- 764. J. Appl. Phys. 43, 3499-3506 (1972) , “Electron Paramagnetic Resonance of the lattice Damage in Oxygen-Implanted Silicon”, K.L. Brower and Wendland BeezholdThe nature of the lattice damage produced at room temperature in ion-implanted intrinsic and n-type silicon has been studied as a function of 160-keV O+ ion fluence using electron paramagnetic resonance (EPR). The known EPR spectra observed were the negative divacancy (Si-G7), the... (Read more)Si| EPR ion-implantation neutron-irradiation| 31P D G7 Oxygen P3 Phosphorus S1 S2 SL2 Silicon amorphous vacancy .inp files: Si/SL2 | last update: Takahide Umeda
- 765. Phys. Rev. B 6, 436 (1972) , “Spin-Dependent Recombination on Silicon Surface”, Daniel J. LepineIt is shown that, in pure silicon, the recombination time of photocreated excess carriers depends on the relative spin orientation of the carriers and of the recombination centers. This is evidenced by the observed decrease of the photoconductivity when the magnetization of the recombination centers... (Read more)
- 766. Phys. Rev. B 5, 4274 (1972) , “17O Hyperfine Structure of the Neutral (S=1) Vacancy-Oxygen Center in Ion-Implanted Silicon”, K. L. Brower.The intensity of the 17O hyperfine spectrum associated with the 28Si-17O-28Si isotopic configuration of the vacancy-oxygen (Si-S1) center was enhanced by ion implantation of 17O into silicon. The Si-S1 17O hyperfine spectrum was... (Read more)Si| EPR ion-implantation| 17O Oxygen SL1 pair(=2) vacancy .inp files: Si/V-O* | last update: Takahide Umeda
- 767. Phys. Rev. B 5, 3988 (1972) , “Electron-Paramagnetic-Resonance Detection of Optically Induced Divacancy Alignment in Silicon”, C. A. J. Ammerlaan, G. D. Watkins.An EPR study was made of the divacancy in silicon, produced by 1.5-MeV electron irradiation at room temperature, under illumination with polarized light. A light-induced alignment of divacancies among the various Jahn-Teller distortion directions in the lattice is observed for the singly positively... (Read more)
- 768. Radiat. Eff. 15, 77 (1972) , “New EPR Spectra in Neutron-Irradiated Silicon”, Y. H. Lee, Y. M. Kim, J. W. Corbett.Six new EPR spectra are reported which are apparently due to intrinsic defects created in the neutron-irradiation and, in some cases, annealing of silicon. In addition a spectrum similar to, but distinct from, that due to the vacancy-phosphorus center is reported. Some tentative defect models are discussed to emphasize the features of the spectra, but more detailed studies are required to establish the identity of the giving rise to these spectra.
- 769. Sov. Phys. Semicond. 5, 1930 (1972) , “EPR of Zinc Atoms in p-Type Silicon”, V. B. Ginodman, P. S. Gladkov, B. G. Zhurkin, B. V. Kornilov.Zinc is a double accepter in silicon and it introduces two levels, E + 0.31 and E + 0.55 eV, into forbidden band [1,2]. The electrical and optical properties of zinc-doped silicon have been investigated by several workers [2-4]. A brief report of the observation of EPR in silicon is given in [5,6]: in these investigations the magnetic field H was perpendicular to the axis of compression of a crystal. Uniaxial compression gave rise to a structure in EPR spectrum of Zn67 and this structure was attributed to the hyperfine interaction of an unpaired hole with the magnetic moment of the Zn67 nucleus. The present paper describes the result of an investigation of the EPR of the Zn- state of zinc in p-type silicon doped with zinc in p-type silicon doped with zinc and phosphorus. The investigation was carried out at liquid helium temperature.
- 770. J. Appl. Phys. 42, 864 (1971) , “New EPR Spectra in Irradiated Silicon”, D. F. Daly.The purpose of this brief note is to report the spin Hamiltonian parameters for two new EPR spectra that have been observed in annealed irradiated silicon. Comparisons are also made with the parameters of centers already belonging to the extensive catalogue of EPR spectra in silicon. In acordance... (Read more)
- 771. Jpn. J. Appl. Phys. 10, 52-62 (1971) , “Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I”, Y. NishiThree kinds of paramagnetic centers named PA, PB and PC have been found in a silicon-silicon dioxide structure at liquid nitrogen temperature. PA (g=∼2.000, ΔH=∼4 Oe), and PB having anisotropic g-value... (Read more)
- 772. Phys. Rev. B 4, 1968 (1971) , “Electron Paramagnetic Resonance of the Neutral (S=1) One-Vacancy-Oxygen Center in Irradiated Silicon”, K. L. Brower.A new EPR spectrum, labeled Si-S1, has been observed in electron- or neutron-irradiated, n- or p-type, crucible-grown silicon under illumination with approximately band-gap light. The Si-S1 spectrum consists primarily of a fine-structure spectrum and a 29Si hyperfine spectrum. By... (Read more)
- 773. Phys. Rev. Lett. 27, 1573 (1971) , “Properties of the Interstitial in the Diamond-Type Lattice ”, G. D. Watkins and R. P. Messmer and C. Weigel, D. Peak, and J. W. Corbett*Linear combination of atomic orbital—molecular orbital cluster calculations using extended Hückel theory suggest that the interstitial carbon atom in diamond prefers an "interstitialcy" configuration. The predicted minimum-energy configuration changes with charge state, providing a possible... (Read more)
- 774. phys. stat. sol. (a) 5, 737 (1971) , “Observations of arsenic atoms in silicon crystals by use of helium ion scattering”, F. Fujimoto , K. Komaki , K. Hisatake , H. NakayamaA method is presented to obtain density distribution and attenuation factor of foreign atoms inside a silicon crystal using backscattering spectra of a 2 MeV helium beam in the random and aligned directions. Experiments were performed on two silicon crystals, one including about 0.15 at% arsenic... (Read more)
- 775. Radiat. Eff. 8, 229 (1971) , “Li-Defect Interactions in Electron-Irradiated n-Type Silicon by EPR Measurements”, B. Goldstein.Single crystal sylicon, both with and without oxygen, has been diffused with lithium to concentrations ~1017/cm3, irradiated woth 1 to 1.5 MeV electrons, and the ensuing defects studies by EPR measurements. The presene of oxygen strongly affects the properties of these defects. Measurements have indicated the presence of two new defects which involve Li---one in O-containing material and one in O-free material. The defects are observed in their electron-filled state, and indicate a net electron spin of 1/2. The defect spectra disappear (with time) at room temperature, and can be explained by the formation of other Li-involved defects which lie deeper in the energy bandgap and are not visible by EPR. Electron irradiatioin at 40ºK followecd by annealing at higher temperatures show that both EPR defects described above begin to form at about 200ºK and begin to decrease at about 275ºK---just as does the 250ºK reverse annealing observed generally for n-type Si. Based on these data, and the work of others, it is suggested that both defects form as a result of the motion of Si interstitial which produce a (Li-O-interstitial) complex in O-containing Si, and (Li-interstitial) complex in O-free Si.
- 776. Radiat. Eff. 8, 203 (1971) , “An EPR Study of Fast Neutron Radiation Damage in Silicon”, D. F. Daly, H. E. Noffke.Using electron paramagnetic resonance (EPR) the indensity of the point defects produced by fast neutron irradiation of silicon at room temperature has been determined and the concentration of each defect has been measured. Irradiations were perfrmed at an unmoderated fast burst reactor to assure that damage from gamma irradiation could be neglected and that all the obsserved damage could be attributed to desplacements by fast neutrons. Total fast neutron fluence between 1.2×1015 n/cm2 and 7×1015 n/cm2 was used. The initial rate of removal of the phosphorus donor agrees with the initial carrier removal. However, the production rate for the paramagnetic damage centers is approximately 10 per cent of the carrier removal and less than 1 per cent of the estimated number of displacements per neutron collision. For samples containing approcimately 1016 phosphorus donoers/cm3, the neutral spectrum is observed simultaneously with the negative divacancy spectrum (Si-G7) in both crucible-grown and float-zone crystals. According to the energy level scheme determined for these spectra in electron irradiation silicon, these spectra cannot appear simultaneously if the sample is in equilibrium and uniformly irradiated. From the observation of these spectra, it is concluded that the damage concentrarion and hence the depth of the Fermi level is nonuniform on a microscopic scale. These results are interpreted according to the cluster model for the neutron damage. The cluster consists of a core of damaged silicon with the Fermi level at the center of the band gap and a surrounding space charge region. Outside the space charge region, the Fermi level is the same as in undamaged silicon. It is concluded that the low production rate of the point defects and the non-uniform Fermi level constitute microscopic evidence for the defect cluster model of fast neutron damage in silicon.
- 777. Solid State Commun. 9, 1695 (1971) , “Mssbauer effect and lattice parameter for silicon doped with antimony*1 ”, J. R. Teague, C. M. Yagnik, G. J. Long and Robert Gerson and L. D. LafleurSingle crystal silicon, both with and without oxygen, has been diffused with lithium to concentrations~1017/cm3, irradiated with 1 to 1.5 MeV electrons, and the ensuing defects studies by EPR measurements. The presence of oxygen strongly affects the properties of these defects. Measurements have indicated the presence of two new defects which involve Li―one in O-containing material and one in O-free material. The defects are observedin their electron-filleed state, and indicate a net electron spin of 1/2. The defect spectra disappear (with time) at room temperature, and can be explained by the formation of other Li-involved defects which lie deeper in the energy bandgap and are not visible by EPR. Electron irradiation at 40ºK followed by annealing at higher temperature show that both EPR defects described above begin to form at about 200ºK and begin to decrease at about 275ºK―just as does the 250ºK reverse annealing observed generally for n-type Si. Based on these data, and the workof others, it is suggested that both defects form as a result of the motion of Si interstitials which produce a (Li-O-interstitial) conplex in O-containing Si, and a (Li-interstitial) complex in O-free Si. (Read more)
- 778. Sov. Phys. JETP 33, 623 (1971) , “Electron paramagnetic resonance of dislocations in silicon”, V. A. Grazhulis, Yu. A. Osip'yan
- 779. J. Phys. Chem. Solids 31, 739 (1970) , “Electron Irradiation Damage in Silicon Containing Carbon and Oxygen”, A. R. Bean, R. C. Newman and R. S. Smith.Infra-red absorption bands have been measured in the range 1–25 μm for a large number of silicon samples containing oxygen and carbon impurities after various doses of irradiation at room temperature by 2 MeV electrons. Measurements have been made of the removal rates of oxygen and... (Read more)
- 780. J. Phys. Chem. Solids 31, 1381 (1970) , “The Annealing of the EPR-Signal Produced in Silicon by Plastic Deformation”, F. D. Wohler and H. AlexanderW. SanderIn silicon an EPR signal is produced by plastic deformation. The annealing behavior of this signal has been investigated, and the dislocation density and structure has been studied by the etch pit technique and by electron microscopy. The EPR-signal anneals in one stage with an activation energy of... (Read more)
- 781. Phys. Rev. B 2, 4110 (1970) , “Li-Defect Interactions in Electron-Irradiated n-Type Silicon”, B. Goldstein.Single-crystal silicon, both with and without oxygen, has been diffused with lithium to concentrations ? 1017/cm3, irradiated with 1-1.5-MeV electrons, and the ensuing defects studied by EPR and electrical measurements. The presence of oxygen strongly affects the properties of... (Read more)Si| EPR electron-irradiation| Lithium RCA3 RCA4 n-type .inp files: Si/Li3 Si/Li4 | last update: Takahide Umeda
- 782. Phys. Rev. B 1, 4071 (1970) , “Electron Paramagnetic Resonance Studies of a System with Orbital Degeneracy: The Lithium Donor in Silicon”, G. D. Watkins and Frank S. HamElectron-paramagnetic-resonance (EPR) and electron-nuclear double-resonance (ENDOR) spectra are reported for the first time for the isolated interstitial lithium shallow-donor center in silicon. In zero applied stress the EPR spectrum is complicated because of the fivefold orbital degeneracy... (Read more)
- 783. Phys. Rev. B 1, 1908 (1970) , “Electron Paramagnetic Resonance of the Aluminum interstitial in Silicon”, Keith L. BrowerElectron-paramagnetic-resonance spectra of the Al++ interstitial (Si-G18) produced in aluminum-doped (p-type) silicon by room temperature or 4K electron irradiations are presented and show that the Al++ is located in the tetrahedral interstitial site. The hyperfine... (Read more)
- 784. Solid State Commun. 8, 175 (1970) , “Low temperature electron irradiation of silicon containing carbon ”, A. R. Bean and R. C. NewmanPrevious work has shown that irradiation of silicon at low temperatures leads to the formation of a centre giving rise to local mode absorption bands at 922 and 932 cm-1; this centre has been ascribed to a carbon-oxygen complex with a trapped silicon interstitial in an adjacent site. It... (Read more)
- 785. Sov. Phys. JETP 31, 677-679 (1970) , “Electron Paramagnetic Resonance in Plastically Deformed Silicon”, V. A. Grazhulis, Yu. A. Osipyan.Lightly doped silicon crystals were investigated experimentally by the electron paramagnetic resonance method. Paramagnetic centers, generated during plastic deformation of these crystals, were detected. The concentration of these centers increased monotonically with increasing degree of deformation. The EPR spectrum of these centers was anisotropic and had a partially resolved fine structure. The centers werestrongly annealed only at temperature T ≧ 600ºC and the activation energy of the annealing process was ~2 eV. It was concluded that these centers were due to electrons of broken bonds in the cores of dislocations with edge components.
- 786. Appl. Phys. Lett. 15, 267 (1969) , “Electron Paramagnetic Resonance in Ion Implanted Silicon”, D. F. Daly, K. A. Pickar.Electron paramagnetic resonance spectra of radiation damage centers in silicon have been observed following implantation with nitrogen and phosphorous ions. Two of these spectra have narrow lines and can be fitted to anisotropic g-tensors and zero field splitting tensors. One is a new... (Read more)
- 787. Appl. Phys. Lett. 15, 208 (1969) , “Electron Paramagnetic Resonance of Defects in Ion-Implanted Silicon”, K. L. Brower, F. L. Vook, and J. A. BordersThe first EPR measurements of the identity of defects in an ion-implanted layer (< 15 000 Å) are reported. The SiP3 center is the dominant paramagnetic defect produced at room temperature by 400-keV O+ implantation in Al- and B-doped Lopex Si, and it anneals below 200°C. The... (Read more)
- 788. J. Appl. Phys. 40, 3879 (1969) , “Three New Electron Spin Resonance Centers in Electron-Irradiated Silicon”, H. Horiye and E. G. WiknerElectron spin resonance (ESR) has been effectively used to study irradiation effects in silicon crystals. A good review paper on this subject is that of Watkins in which he lists 27 centers observed in irradiatedsilicon. The present paper describes three more centers which have not previously been... (Read more)
- 789. Phys. Rev. 184, 739 (1969) , “Shallow Donor Electrons in Silicon. I. Hyperfine Interactions from ENDOR Measurements”, Edward B. Hale and Robert Lee MieherThe hyperfine interactions of Si29 lattice nuclei with ground-state donor electrons in arsenic-, phosphorus-, and antimony-doped silicon have been measured by electron-nuclear double resonance (ENDOR). Hyperfine constants are reported for each donor for about 20 shells containing a total... (Read more)
- 790. Phys. Rev. Lett. 23, 581 (1969) , “Electron Spin Resonance in Amorphous Silicon, Germanium, and Silicon Carbide”, M. H. Brodsky and R. S. TitleThe g values, line shapes, and linewidths of the ESR signals from within the bulk of amorphous silicon, germanium, and silicon carbide are found to be similar to those of the electron states observed in the surface regions of the corresponding crystalline forms. Discussion is given in terms of a... (Read more)Ge Si SiC| EPR| Carbon D Germanium Silicon amorphous dangling-bond .inp files: Si/amorphous | last update: Takahide Umeda
- 791. Phys. Rev. 174, 881 (1968) , “Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Arsenic- and Antimony-Vacancy Pairs”, Edward L. Elkin and G. D. WatkinsTwo EPR spectra are observed in irradiated silicon (designated Si-G23 and Si-G24) which are identified with the neutral charge states of a lattice vacancy adjacent to a substitutional arsenic or antimony atom, respectively. EPR and ENDOR studies reveal a high degree of similarity between these... (Read more)
- 792. Phys. Rev. 170, 705 (1968) , “Electron Paramagnetic Resonance from Clean Single-Crystal Cleavage Surfaces of Silicon”, D. Haneman.EPR measurements have been made on aligned cleavage faces of Si, prepared and studied in high vacuum (<10-9 Torr). The signal, observable after accumulation, is a single line at g=2.0055 with width 6 G, similar to that from vacuum-crushed powders. It is unaffected by oxygen exposures... (Read more)
- 793. Sov. Phys. Semicond. 2, 688 (1968) , “Electron Paramagnetic Resonance of Boron in Dislocation-Free Silicon Crystals”, B. G. Zhurkin, N. A. Penin, N. N. Sibeldin.A study was made of the dependence of the EPR line of boron in uncompensated p-type silicon on the uniaxial compression, the concentration of boron in dislocation-free crystals, and on the dislocation density. It was found that an increase in the concentration of boron from 2・1016 to 1.5・1018 cm-3 broadened the resonance line. When the dislocation density was increased from zero to 2・105 cm-2, the resonance line broadened to more than twice its original width. The experiments were carried out at T = 4.2ºK and the compressive forces were applied along the [111] and [110]. The line width was practically independent of the direction of compression. The results obtained were in qualitative agreement with the theory.
- 794. J. Appl. Phys. 38, 3148 (1967) , “Self-Diffusion in Intrinsic and Extrinsic Silicon”, J. M. Fairfield and B. J. MastersSilicon self-diffusion coefficients were determined by studying the diffusion of 31Si into silicon crystals of various degrees of perfection and doping. For intrinsic silicon, the self-diffusion coefficient can be represented by D=9,000 exp (5.13 eV/kT)... (Read more)
- 795. J. Appl. Phys. 38, 2433 (1967) , “Effect of Impurities on the Annealing Behavior of Irradiated Silicon”, Mitsuji Hirata, Masako Hirata, and Haruo Saito and James H. Crawford, Jr.The effect of impurities on the annealing behavior of irradiated silicon was studied through an investigation of isothermal annealing of minority carrier lifetime in silicon crystals containing phosphorus, arsenic, antimony, or bismuth in the temperature range 100°180°C. The activation... (Read more)
- 796. Phys. Lett. 25A, 232 (1967) , “Paramagnetic Centres in Proton-Irradiated Silicon”, H. Lütgemeier and K. SchnitzkeAs in the case of neutron irradiation P1, P3 and P6 centres occur in silicon after irradiation with protons of 3 MeV. A new centre is observed which is axially symmetric along the [111] axis and has the eigenvalues g|| = 2.0010 and g = 2.0103. (Read more)
- 797. Phys. Lett. A 25, 726 (1967) , “Die bildung paramagnetischer zentren längs der reichweite von protonen in silizium”, H. Lütgemeier and K. SchnitzkeA new isotropic center S2 is observed at the end of the range of photons in silicon. By etching the irradiated samples in steps of a few microns, the dependency of the production rate of the centers S1, S2, P1 and P3 was investigated. (Read more)
- 798. Phys. Rev. 155, 802 (1967) , “Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Aluminum-Vacancy Pair”, G. D. Watkins.An EPR spectrum produced in aluminum-doped silicon by 1.5-MeV electron irradiation is described. Labeled Si G9, it is identified as arising from an aluminum-vacancy pair, presumably formed when a mobile lattice vacancy is trapped by substitutional aluminum. The resonance is observed only upon... (Read more)
- 799. Appl. Phys. Lett. 8, 280 (1966) , “SILICON SELF-DIFFUSION”, B. J. Masters and J. M. FairfieldThe process of self-diffusion within the silicon lattice is of considerable interest, not only for the development of diffusion theory, but also because of the limitation it imposes upon the fabrication of semiconductor devise structures. Several authors have estimated the activation energy of... (Read more)
- 800. Jpn. J. Appl. Phys. 5, 333 (1966) , “Electron Spin Resonance in SiO2 Grown on Silicon”, Y. NishiRecently there has been much interest in the behavior of space charge in SiO2 on silicon. Based on the generation and motion of charged species,structural models have been proposed by Seraphimet al. and by Revesz. In the present study electron spin resonance absorption has been... (Read more)
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