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- 401. Phys. Rev. B 46, 4582 (1992) , “Aluminum Incorporation in the Si-NL10 Thermal Donor”, T. Gregorkiewicz, H. H. P. Th. Bekman, and C. A. J. AmmerlaanThe role of aluminum dopants in the creation and properties of the Si-NL10 center was investigated by means of electron-nuclear-double-resonance techniques. At least 10 different Si-NL10 species were identified, and their generation kinetics were studied in detail. Possible transformation mechanisms... (Read more)
- 402. Phys. Rev. B 46, 4544 (1992) , “Electron-Paramagnetic-Resonance Identification of Silver Centers in Silicon”, N. T. Son, V. E. Kustov, T. Gregorkiewicz, and C. A. J. AmmerlaanThe observation of silver in silicon by electron paramagnetic resonance (EPR) is reported. In p-type silicon doped with silver, several EPR spectra were detected. Three of these, which are labeled Si-NL42, Si-NL43, and Si-NL44, exhibit hyperfine structure with splitting into two components of equal... (Read more)
- 403. Phys. Rev. B 46, 4312 (1992) , “Observation of five additional thermal donor species TD12 to TD16 and of regrowth of thermal donors at initial stages of the new oxygen donor formation in Czochralski-grown silicon ”, W. Götz and G. Pensl and W. ZulehnerThermal donors (TDs) are generated in Czochralski (CZ) -grown silicon by heat treatments at temperatures around 470 °C. They form a family of individual species with differing ionization energies and act as double donors (TDx0, TDx+). Up to 11 species are already known. We... (Read more)
- 404. Phys. Rev. B 46, 1882 (1992) , “Charge-State-Dependent Activation Energy for Diffusion of Iron in Silicon”, H. Takahashi, M. Suezawa, and K. SuminoPrecipitation of neutral iron (Fe0) in n-type silicon (Si) and the generation of iron-acceptor pairs controlled by diffusion of positively charged iron (Fe+) in p-type Si are investigated by means of electron spin resonance (ESR). The temperature range in which the diffusion of... (Read more)
- 405. Phys. Rev. B 46, 12335 (1992) , “Microscopic mechanism of atomic diffusion in Si under pressure ”, Osamu Sugino and Atsushi OshiyamaWe have performed the first-principles total-energy calculations on the atomic diffusion of group-V impurities in Si, and have revealed the pressure effect on the activation energy of the diffusion. For the vacancy mechanism, the activation energies for P, As, and Sb decrease with pressure. For the... (Read more)
- 406. Phys. Rev. B 46, 12316 (1992) , “Zero-Field Optical Detection of Magnetic Resonance on a Metastable Sulfur-Pair-Related Defect in Silicon: Evidence for a Cu Constituent”, A. M. Frens, M. T. Bennebroek, J. Schmidt, W. M. Chen, B. Monemar.A metastable complex defect in S-doped silicon has been studied with zero-field optically-detected magnetic-resonance (ODMR) spectroscopy. The defect shows two characteristic photoluminescence (PL) spectra SA and SB, corresponding to two different geometric configurations 1 and... (Read more)
- 407. Phys. Rev. B 45, 5883 (1992) , “Electron Paramagnetic Resonance of a Platinum Pair Complex in Silicon”, M. Höhne.EPR measurements of hydrogen-treated Si:Pt single crystals reveal a pair of equivalent Pt ions on next-nearest-neighbor sites. The g values and hyperfine parameters differ essentially from those of a previously detected Pt pair center; therefore, an additional constituent in at least one of the... (Read more)
- 408. Phys. Rev. B 45, 4344 (1992) , “Dipolar Interaction between [111] Pb Defects at the (111)Si/SiO2 Interface Revealed by Electron-Spin Resonance”, G. Van Gorp, A. Stesmans.A method is outlined to vary reproducibly the density of [111] Pb centers (?Si?Si3 defects with an unpaired sp3 orbital perpendicular to the interface) at the thermal (111)Si/SiO2 interface (grown at ?920 °C; 1.1 atm O2) using alternate non–Iin... (Read more)
- 409. Phys. Rev. B 45, 3287 (1992) , “Vacancy-Model Interpretation of EPR Spectrum of Si:Pt-”, F. G. Anderson, F. S. Ham, G. D. Watkins.The vacancy model for platinum in silicon as proposed by Watkins postulates a neutral Pt atom in the 5d10 electronic configuration occupying a negatively charged lattice vacancy, so that electronic properties of Pt- should be similar to those of the isolated vacancy... (Read more)
- 410. Phys. Rev. B 45, 3279 (1992) , “EPR Investigation of Pt- in Silicon”, F. G. Anderson, R. F. Milligan, G. D. Watkins.Using EPR we have resolved the question of whether the dominant Pt- defect in silicon consists of an isolated platinum ion or a platinum-platinum pair. We have measured the uniaxial-stress-induced shifts in the g values and find that the stress-coupling tensor shows the defect symmetry to... (Read more)
- 411. Phys. Rev. B 45, 11612 (1992) , “Theoretical studies on the core structure of the 450 °C oxygen thermal donors in silicon”, Peter Deák and Lawrence C. Snyder and James W. CorbettResults of molecular- and cyclic-cluster calculations using semiempirical Hamiltonians on a wide range of small oxygen complexes in crystalline silicon are reported. It is shown that a core involving (at most) two oxygens and a self-interstitial can explain the observed behavior of the... (Read more)
- 412. Phys. Rev. Lett. 69, 3185 (1992) , “Paramagnetic State of the Isolated Gold Impurity in Silicon”, N. T. Son, T. Gregorkiewicz, and C. A. J. AmmerlaanThe paper reports on the observation of the electron paramagnetic resonance spectrum of the isolated substitutional gold impurity in silicon. The spectrum has orthorhombic I (C2v) symmetry and an effective spin S=1/2. It has been detected in silver-doped samples with gold being introduced... (Read more)
- 413. Phys. Rev. Lett. 69, 1580 (1992) , “Linear Stark and Nonlinear Zeeman Coupling to the Ground State of Effective Mass Acceptors in Silicon”, Andreas Köpf and Kurt LassmannIt is shown by dielectric resonance absorption at 60 GHz that there is a linear coupling of the electric field to the ground state of effective mass acceptors in Si reflecting the lower Td symmetry in the central portion of the ground-state wave function. The coupling increases strongly... (Read more)
- 414. Appl. Phys. A 53, 147 (1991) , “Iron-Aluminum Pairs in Silicon”, S. Greulich-Weber, A. Grger, J. M. Spaeth, H. Overhof.Iron-aluminum pairs in silicon are investigated with conventional and optically detected electron paramagnetic resonance (EPR). For the trigonal and orthorhombic pairs known from previous EPR measurements we found for the first time optical absorption bands by measuring their magnetic circular dichroism of the absorption (MCDA). Direct experimental evidence is presented for the configurational bistability of both pairs by showing that the MCDA of the trigonal configuration can be transformed into that of the orthorhombic configuration by the combined effect of light and temperature. A new trigonal pair was discovered by conventional EPR having the same EPR intensity as the known one. Total energy calculations of various (Fei-Als) pair configurations show that two trigonal (Fei-Als)0 pairs with different Fei-Als separations have almost the same binding energy and should occur with the same probability. Fei + is always on a tetrahedral interstitial site, while Als - is nearest neighbor along <111> in one pair, second nearest neighbor in the other one with one silicon lattice site in between. (Read more)
- 415. Appl. Phys. Lett. 59, 3165 (1991) , “Hydrogen diffusivities below room temperature in silicon evaluated from the photoinduced dissociation of hydrogen–carbon complexes”, Yoichi Kamiura, Minoru Yoneta, and Fumio HashimotoWe have evaluated hydrogen and deuterium diffusivities in silicon below room temperature (220–270 K) by analyzing the kinetics of photoinduced dissociation of a chemical etching introduced hydrogen (deuterium)–carbon complex. Under sufficiently strong illumination, the annihilation rate... (Read more)
- 416. Appl. Phys. Lett. 59, 1890 (1991) , “New Carbon Related Defects Formed in Nitrogen Rich Czochralski Silicon Crystals”, Akito Hara and Akira OhsawaWe studied some electrical properties of silicon crystals containing carbon, nitrogen, and oxygen. Nitrogen-oxygen complexes are formed in nitrogen- and oxygen-rich silicon crystals. However, we found that carbon suppresses the formation of nitrogen-oxygen complexes. Moreover, new shallow... (Read more)
- 417. Appl. Phys. Lett. 58, 370 (1991) , “Interstitial oxygen determination near epitaxial silicon and Czochralski silicon interface”, M. Geddo, B. Pivac, A. Borghesi, and A. Stella and M. PedrottiThe oxygen content near epitaxial layer-substrate silicon interface was investigated using a micro Fourier transform infrared technique. Systematic measurements, performed in a transversal wafer cross-section configuration, clearly indicated the presence of interstitial oxygen in the epitaxial layer... (Read more)
- 418. Appl. Phys. Lett. 58, 2144 (1991) , “Electron Paramagnetic Resonance of a Multistable Inaterstitial-Carbon-Substitutional-Phosphorus Pair in Silicon”, X. D. Zhan and G. D. WatkinsTwo new electron paramagnetic resonance centers are reported, Si-L8 and Si-L9, which are identified with the stable and one of the four metastable configurations, respectively, of a multistable defect recently discovered by deep level transient capacitance spectroscopy in electron-irradiated... (Read more)
- 419. Appl. Phys. Lett. 58, 1641 (1991) , “Fundamental chemical differences among Pb defects on (111) and (100) silicon”, J. H. Stathis, L. Dori.Using electron spin resonance, a single defect (called Pb0) is observed at the Si(111)/SiO2 interface, whereas two different defects (called Pb0 and Pb1) are observed at the Si(100)/SiO2 interface. While... (Read more)
- 420. Appl. Phys. Lett. 58, 1620 (1991) , “Excitons and light-induced degradation of amorphous hydrogenated silicon”, Martin S. Brandt and Martin StutzmannExcitonic states involved in electronic transport of undoped amorphous hydrogenated silicon (a-Si:H) are observed using spin-dependent photoconductivity (SDPC). Upon light soaking the excitonic signal decreases with regard to the SDPC signal due to recombination via dangling bonds. It has... (Read more)
- 421. Appl. Phys. Lett. 58, 137 (1991) , “New application for isothermal capacitance transient spectroscopy: Identification of tunneling in semiconductor-insulator interfaces”, E. C. Paloura, J. Lagowski, and H. C. GatosThe GaAs-insulator interface is characterized by deep level transient spectroscopy (DLTS) and isothermal capacitance transient spectroscopy (ICTS). It is demonstrated that while DLTS can only detect transients with temperature-dependent emission rates, ICTS can detect temperature-independent... (Read more)
- 422. Appl. Phys. Lett. 58, 131 (1991) , “Quenched-in defect removal through silicide formation by rapid thermal processing”, Daniel MathiotWe report on a detailed study of the influence of TiSi2 silicidation on the formation of the quenched-in defects usually created by rapid thermal processing (RTP). It is shown that TiSi2 growth during RTP leads to a total removal of the defects, whereas the presence of... (Read more)
- 423. Appl. Phys. Lett. 56, 949 (1991) , “Evidence for the existence of a negatively charged hydrogen species in plasma-treated n-type Si”, A. J. Tavendale, S. J. Pearton, A. A. WilliamsWe demonstrate the drift of a donor-passivating hydrogen species under the action of the electric field in the depletion region of a reverse-biased Au/n-Si Schottky diode hydrogenated by exposure to a low-frequency discharge. The redistribution is explained by the unidirectional drift of a... (Read more)
- 424. J. Appl. Phys. 70, 5401-5403 (1991) , “Deep-level transient spectroscopy on p-type silicon crystals containing tungsten impurities”, Toshio Ando, Seiichi Isomae, and Chusuke MunakataTungsten deep levels are investigated to clarify energies, which are inconsistent among current research. Hole traps located at 0.41 eV above the top of the valence band are determined to be due to tungsten impurities. The concentration of hole traps is almost one-third of that of the tungsten... (Read more)
- 425. J. Appl. Phys. 69, 175 (1991) , “Electron Spin Resonance of Defects in Silicon-on-Insulator Structures Formed by Oxygen Implantation: Influence of ? Irradiation”, A. Stesmans, A. G. Revesz, H. L. Hughes.Silicon-on-insulator structures obtained by single-step implantation of oxygen followed by high temperature annealing were studied by K-band electron spin resonance (ESR) at 4.331 K. The spectrum has a strong line at g=2.0059±0.0001 with a spin density of... (Read more)
- 426. Phys. Rev. B 44, 6125 (1991) , “Electron-Paramagnetic-Resonance Identification of a Trigonal Chromium-Indium Pair in Silicon”, P. Emanuelsson, P. Omling, H. G. Grimmeiss, J. Kreissl, W. Gehlhoff.An EPR spectrum in silicon doped with chromium and indium is reported. The spectrum, which shows a complicated fine and hyperfine structure could be identified as originating in a chromium-indium pair of trigonal symmetry. The fine structure corresponds to transitions within the... (Read more)
- 427. Phys. Rev. B 44, 3678 (1991) , “Electron-Paramagnetic-Resonance Identification of the Manganese-Gallium Pair in Silicon”, J. Kreissl, K. Irmscher, W. Gehlhoff, P. Omling, P. Emanuelsson.An electron-paramagnetic-resonance (EPR) investigation of silicon doped with gallium and manganese shows a defect-related spectrum with trigonal symmetry. The proof that Mn and Ga are involved in the defect is based on the observed hyperfine interactions. A complicated fine-structure behavior... (Read more)
- 428. Phys. Rev. B 44, 3409 (1991) , “Hydrogen States Probed by Electron-Spin Resonance of Phosphorus Donors in Silicon”, Kouichi Murakami, Hiromitsu Suhara, Shigeru Fujita, and Kohzoh MasudaHydrogen in phosphorus-doped silicon has been investigated, by monitoring shallow donor P by electron-spin resonance (ESR). Significant broadening in motionally narrowed ESR lines is first observed in Si samples treated with hydrogen plasma. It is found from the donor-concentration dependence that... (Read more)
- 429. Phys. Rev. B 44, 11486-11489 (1991) , “Reorientation of the B-H complex in silicon by anelastic relaxation experiments”, G. Cannelli, R. Cantelli, M. Capizzi, C. Coluzza, F. Cordero, A. Frova, A. Lo PrestiThe elastic energy loss between 60 and 300 K was measured in SiBxHy at frequencies between 2.4 and 32 kHz. A single-time relaxation process appears in the neighborhood of 130 K, which is due to the stress-induced jumps of H around B, with a relaxation time... (Read more)
- 430. Phys. Rev. B 44, 11353 (1991) , “O Environment of Unpaired Si Bonds (Pb Defects) at the (111)Si/SiO2 Interface”, A. Stasmans, K. Vanheusden.The immediate oxygen environment in the silica side of the [111]Pb defect (an interfacial ?Si?Si3 defect with an unpaired sp3-like hybrid perpendicular to the interface) has been revealed from 17O hyperfine (HF) structure electron-spin-resonance... (Read more)
- 431. Phys. Rev. B 43, 6569 (1991) , “Optically detected magnetic resonance of dislocations in silicon”, V. Kveder, P. Omling, H. G. Grimmeiss, Yu. A. OsipyanThe observation of optically detected magnetic resonance (ODMR) signals directly correlated with dislocations in silicon is reported. The ODMR signals are identified as resonances from free electrons, dangling bonds, and quasifree holes bound to a one-dimensional potential in straight dislocations.... (Read more)
- 432. Phys. Rev. B 43, 4028 (1991) , “Electronic structure of interstitial carbon in silicon ”, Morgan Besson and Gary G. DeLeoWe report the results of electronic structure calculations for the carbon interstitial in silicon in the positive, neutral, and negative charge states. We have used two self-consistent complementary cluster approaches. The modified neglect of diatomic differential overlap method produces reliable... (Read more)
- 433. Phys. Rev. Lett. 67, 1149 (1991) , “Structure of Gold in Silicon”, G. D. Watkins, M. Kleverman, A. Thilderkvist, and H. G. GrimmeissDetailed information on the electronic structure of the neutral substitutional gold center in silicon (Au0) has been revealed from Zeeman studies of the donor and acceptor excitation spectra at 793 and 611 meV, respectively. The center is paramagnetic, S=1/2, with g??2.8 and... (Read more)
- 434. Phys. Rev. Lett. 66, 3028 (1991) , “Silicide formation and the generation of point defects in silicon ”, B. G. Svensson and M. O. Aboelfotoh and J. L LindströmThe annealing behavior of the divacancy (V2) acceptor levels in silicon is investigated with the use of Schottky-barrier structures formed by the deposition of copper on n-type silicon irradiated with 2-MeV electrons. At temperatures below ∼150 °C an anomalously high annealing rate of... (Read more)
- 435. Phys. Rev. Lett. 66, 2360 (1991) , “Deep State of Hydrogen in Crystalline Silicon: Evidence for Metastability”, B. Holm, K. Bonde Nielsen, and B. Bech NielsenAfter proton implantation into n-type silicon at 45 K, a bistable hydrogen center with a band-gap level Ec-Et=0.16 eV is observed by deep-level transient spectroscopy. The center anneals at ?100 K under zero bias with a decay constant ?=(3.0×1012... (Read more)
- 436. phys. stat. sol. (a) 123, 357 (1991) , “Formation of New Donors and Structural Defects During Low-Temperature Oxygen Precipitation in CZ-Grown Silicon”, Y. Kamiura, F. Hashimoto, M. YonetaIt is demonstrated for the first time that the well known enhancement effects of carbon and low-temperature preannealing on the new donor (ND) generation at 650 °C may be ascribed to the formation of three kinds of NDs, which can be distinguished by their characteristic deep-level transient... (Read more)
- 437. phys. stat. sol. (b) 165, 189 (1991) , “EPR of New Platinum-Related Complexes in Silicon. II. Coexistence of a Tetragonal Jahn-Teller System and a Nearly Trigonal System in One Pair”, M. Höhne, W. Gehlhoff.A spectroscopic peculiarity of two Pt-related complex defects is interpreted for both of them by assuming one Pt ion in a crystal field, which is tetragonal, though another defect is trigonally coordinated. This coexistence is discussed in the framework of a static Jahn-Teller effect. Wave... (Read more)
- 438. phys. stat. sol. (b) 164, 503 (1991) , “EPR of New Platinum-Related Complexes in Silicon I. Defects of Symmetry C1h Formed at Intermediate Temperatures”, M. Höhne, W. Gehlhoff.The variety of Pt-related complex defects in silicon is enlarged by EPR detection of a new group of defects, each of them containing one Pt ion. They are formed by different annealing procedures, including a step at intermediate temperatures. Two of the new complexes exhibit an EPR spectroscopic... (Read more)
- 439. Physica B 170, 155-167 (1991) , “Electron paramagnetic resonance of hydrogen in silicon ”, Yu.V. Gorelkinskii, N.N. Nevinnyi
- 440. Solid State Commun. 80, 439 (1991) , “Electron paramagnetic resonance of nickel in silicon — II. hyperfine and quadrupole interactions”, N. T. Son, A. B. van Oosten and C. A. J. AmmerlaanAn electron paramagnetic resonance (EPR) study on n-type silicon doped with nickel enriched to 88.1% 61Ni is presented. The structure due to the 61Ni isotope with nuclear spin I = 3/2 was investigated. The EPR spectrum with the appearance of "forbidden" lines can be described by a spin... (Read more)
- 441. Solid State Commun. 79, 119 (1991) , “Oxygen Interaction with Defects at the Si/SiO2 Interface”, J. H. Stathis, S. Rigo, I. Trimaille.Using 17O-enriched thermal oxide on silicon, we have measured the hyperfine interaction between dangling bonds at the (111) interface (Pb centers) and oxygen. Our analysis shows that the Pb center interacts with a single oxygen atom in the SiO2. (Read more)
- 442. Solid State Commun. 78, 321 (1991) , “Shallow donor in buried oxide Si-On-insulator structures revealed by γ-irradiation-induced electron spin resonance activation”, A. Stesmans.Si-on-insulator structures formed by implantation of oxygen (SIMOX) in a single step to a dose 1.8 × 1018 O+ cm−2 into p-type (0 0 1) Si and high temperature annealing have been studied by K-band electron spin resonance (ESR) at 4.3–31 K. γ-irradiation to a dose of 1 Mrad... (Read more)
- 443. Solid-State Electronics 34, 835 (1991) , “Spin-dependent Shockley-read recombination of electrons and holes in indirect-band-gap semiconductor p-n junction diodes”, F. C. Rong, W. R. Buchwald, E. H. Poindexter, W. L. Warren , D. J. KeebleThis paper presents a new model for spin-dependent recombination and generation processes based on the electrical detection of magnetic resonance in semiconductor p-n junction diodes. Based on a modified Shockley-Read recombination statistics, this model differs from those models previously proposed... (Read more)
- 444. Sov. Phys. Solid State 33, 1326 (1991) , “Electron Spin Resonance of an Excited Triplet State of a Divacancy in Silicon”, M. P. Vlasenko, L. S. Vlasenko.
- 445. Appl. Phys. Lett. 57, 2663 (1990) , “Maximum density of Pb centers at the (111) Si/SiO2 interface after vacuum anneal”, A. Stesmans and G. Van GorpThe density of interfacial [111]Pb centers, i.e., 0SiSi3 defects with unpaired bond along [111], has been accurately determined by K-band electron spin resonance at 4.3 K on (111)Si/SiO2 structures using various oxidation conditions.... (Read more)
- 446. Appl. Phys. Lett. 57, 162 (1990) , “Chemical Kinetics of Hydrogen and (111) Si-SiO2 Interface Defects”, K. L. Brower and S. M. MyersElectron paramagnetic resonance (EPR) measurements and theoretical considerations have yielded a unified model for the hydrogen chemistry of silicon dangling bond Pb defects at the (111) Si-SiO2 interface. Previous EPR measurements indicated that passivation of... (Read more)
- 447. Hyperfine Interactions 64, 561 (1990) , “Final states in Si and GaAs via RF ?SR spectroscopy ”, Kreitzman S. R.1 Pfiz T.1 Sun-Mack S.2 Riseman T. M.1 Brewer J. H.1 Williams D. Ll.1 and Estle T. L.3The ionization of muonium centers in Si and GaAs have been studied using radio frequency (RF) resonant techniques. In Si all three muonic centers are detectable by RF. No evidence was found for delayed Mu and Mu* states at any temperature. However, our results on the diamagnetic final state (μ f+) show that it is composed of prompt fractions (as seen by conventional μSR) and delayed fractions arising from the ionization of Mu* and Mu. We observe a full μ f+ fraction at 317 K when the Mu relaxation rate is above 10 μs-1. GaAs differs from the situation in Si in that we observed only a partial conversion of Mu* and Mu to a μ+ final state up to 310 K in spite of the fact that the transverse field relaxation rates become very high at 150 and 250 K respectively (Read more)
- 448. Hyperfine Interactions 64, 535 (1990) , “Temperature dependence of muon-decay positron channeling in semiconductors ”, Simmler H.1 Eschle P.1 Keller H.1 Kndig W.1 Odermatt W.1 Patterson B. D.1 Pmpin B.1 Savi? I. M.1 Schneider J. W.1 Straumann U.1 and Trul P.1Planar channeling data ofμ +-decay positrons in various semiconductors are reported. Together with the extensive spectroscopic data supplied by transverse μSR, the location of the different states of the hydrogen pseudo-isotopeμ+ e- (muonium) can be identified by means of planar simulations. In high purity silicon as well as in gallium arsenide a thermally activated site transition is observed which can be assigned to a transition between different muonium states. (Read more)
- 449. IBM J.RES. DEVELOP. 34, 227-242 (1990) , “Internal probing of submicron FETs and photoemission using individual oxide traps”, P. Restle, A. Gnudi
- 450. IEEE Trans. Nucl. Sci. 37, 1650-1657 (1990) , “Spin dependent recombination: A 29Si hyperfine study of radiation-induced Pb centers at the Si/SiO2 interface”, M. A. Jupina , P. M. Lenahan
- 451. J. Appl. Phys. 68, 1358 (1990) , “Strong correlation between new donors and rodlike defects formed at 650 °C in phosphorus-doped, carbon-lean Czochralski silicon preannealed at 450 °C”, Yoichi Kamiura, Fumio Hashimoto, and Minoru YonetaEvidence is presented for strong correlation between new donors and rodlike defects generated at 650 °C in phosphorus-doped, carbon-lean Czochralski silicon preannealed at 450 °C. It is proposed that there are, in general, several types of new donors depending on experimental conditions, and... (Read more)
- 452. J. Appl. Phys. 67, 2462 (1990) , “NL10 Defects Formed in Czochralski Silicon Crystals”, Akito Hara, Iesada Hirai, and Akira OhsawaThe electron spin resonance of defects formed in high-resistivity Czochralski silicon crystals annealed at 470 °C were observed. Defects with C2v symmetry in nitrogen in-diffused crystals annealed for less than about 50 h were observed. With annealing for more than about... (Read more)
- 453. J. Electrochem. Soc. 137, 3642 (1990) , “Effects of Heat-Treatments on Electrical Properties of Boron-Doped Silicon Crystals”, Y. Kamiura, F. Hashimoto, and M. YonetaThe effects of heat-treatments around 1000ºC and subsequent annealing on the electrical properties of boron-dopedsilicon have been studied by electrical conductivity, Hall effect, and deep-level transient spectroscopy measurements. Thehigh-temperature heat-treatments always induced net densities of donors. Four recovery stages, stages I–IV, of heat-treatment-induceddonors were observed on isochronal annealing up to 400°C. Conductivity changes in these stages can be explainedas described below by the reactions of interstitial iron (Fei), its pair (FeiBs) with substitutional boron (Bs), and twounknown donors (D1, D2). That is, stage I (25º–100ºC) D1 → sink and Fei + Bs → FeiBs, stage II (100º–150ºC):FeiBs → Fei + Bs, stage III (200º–250ºC): D2 → sink, stage IV (250º–350ºC): Fei → precipitation. Heat-treatments in an oxygenatmosphere greatly reduced the introduction of Fei and FeiBs in comparison with an argon atmosphere and mainly introducedD1 and D2 donors. The density of D2 was dependent on the heat-treatment temperature, while that of D1 showed almostno dependence. In stage I, D1 was annihilated by first-order kinetics with an activation energy of 0.8 eV. It was indicatedthat D1 and D2 have no relations to iron, copper, oxygen, nor carbon. Though their origins are still unidentified, theremay be some interstitial impurities. In stage IV, Fei is suggested to precipitate at oxygen precipitates and dislocation loopsformed by high-temperature heat-treatments. As to the application to iron gettering in the device fabrication process, it isproposed that annealing around 300ºC is most suitable as the final heat-treatment step to remove iron and related defectsfrom active regions of devices. (Read more)
- 454. Jpn. J. Appl. Phys. 29, L1937 (1990) , “Optical Properties of New Kinds of Thermal Donors in Silicon ”, Yoichi Kamiura, Masashi Suezawa1, Koji Sumino1 and Fumio HashimotoWe have found with far-infrared (FIR) absorption spectroscopy that prolonged annealing of silicon at 470°C leads to the generation of new FIR absorption bands. They are strongly correlated with a recently observed new type of oxygen-related thermal donor (NTD) which is different from either the... (Read more)
- 455. Phys. Rev. B 42, 5765 (1990) , “Bistable interstitial-carbonsubstitutional-carbon pair in silicon”, L. W. Song, X. D. Zhan, B. W. Benson, and G. D. WatkinsA bistable interstitial-carbon–substitutional-carbon pair has been identified in electron-irradiated silicon by a combination of several spectroscopic experimental techniques. In the positive and negative charge states, the stable configuration of the defect involves a carbon-silicon ‘‘molecule’’... (Read more)
- 456. Phys. Rev. B 42, 5759 (1990) , “EPR Identification of the Single-Acceptor State of Interstitial Carbon in Silicon”, L. W. Song and G. D. WatkinsAn EPR center labeled Si-L6 is reported which is identified as arising from the singly ionized acceptor state of isolated interstitial carbon (Ci-) in electron-irradiated crystalline silicon. Correlated deep-level capacitance transient spectroscopy measurements locate the... (Read more)
- 457. Phys. Rev. B 42, 3765 (1990) , “Observation of dipolar interactions between Pb0 defects at the (111) Si/SiO2 interface”, A. Stesmans, G. Van GorpDipole-dopole (DD) interactions between Pb0 (Si?Si3) defects at the two-dimensional (2D) (111) Si/SiO2 interface are revealed by electron-spin resonance. A DD fine-structure doublet develops with increasing [Pb0] resulting in a line shape characteristic of... (Read more)
- 458. Phys. Rev. B 42, 3444 (1990) , “Dissociation Kinetics of Hydrogen-Passivated (111) Si-SiO2 Interface Defects”, K. L. Brower.This paper is concerned with the chemical kinetics of the transformation of hydrogen-passivated interface defects (HPb centers) into paramagnetic Pb centers (?Si?Si3) at the (111) Si-SiO2 interface under vacuum thermal annealing. Float-zone (111) silicon... (Read more)
- 459. Phys. Rev. B 42, 1731 (1990) , “Electron-Paramagnetic-Resonance Identification of a Trigonal Manganese-Indium Pair in Silicon”, J. Kreissl, W. Gehlhoff, P. Omling, P. Emanuelsson.A new, defect-related electron-paramagnetic-resonance (EPR) spectrum in silicon doped with indium and manganese is reported. The spectrum shows trigonal symmetry, and the involvements of Mn and In in the defect are proven from the observed hyperfine interactions. A complicated and unusual... (Read more)
- 460. Phys. Rev. B 42, 11352-11354 (1990) , “Source of 17O hyperfine broadening of the Pb resonance associated with the (111) Si-SiO2 interface”, K. L. BrowerThe Pb center is primarily a silicon dangling-bond type of defect at the (111) Si-SiO2 interface that is observable with electron paramagnetic resonance (EPR). Dry oxidation at 750 °C of (111) silicon with O2 enriched with 17O (I=5/2) to 51.26% is observed... (Read more)
- 461. Phys. Rev. B 41, 8560 (1990) , “Electron Paramagnetic Resonance Identification of the Orthorhombic Iron-Indium Pair in Silicon”, W. Gehlhoff, P. Emanuelsson, P. Omling, and H. G. GrimmeissA different EPR spectrum (Lu4) in silicon doped with indium and iron is reported together with an EPR spectrum previously observed by Ludwig and Woodbury. The two spectra show orthorhombic symmetry and are found to originate from the same FeIn pair. They are explained as transitions within the two... (Read more)
- 462. Phys. Rev. B 41, 12628 (1990) , “Comparative Study of Si-NL8 and Si-NL10 Thermal-Donor-Related EPR Centers”, T. Gregorkiewicz, H. H. P. Th. Bekman, and C. A. J. AmmerlaanThe current status of the electron-paramagnetic-resonance and electron-nuclear double-resonance (ENDOR) studies of thermal-donor (TD) centers in silicon is critically reviewed. The structural models developed for the TD-related Si-NL8 and Si-NL10 heat-treatment centers are presented. On the basis of... (Read more)
- 463. Phys. Rev. B 41, 12354-12357 (1990) , “Negative-charge state of hydrogen in silicon”, J. Zhu, N. M. Johnson, and C. HerringIt is demonstrated that hydrogen can migrate in silicon as a negatively charged species (H-). The evidence is the combined observation of a strong electric-field dependence in the rate of removal of PH complexes during bias-temperature stress of hydrogenated Schottky-barrier diodes and... (Read more)
- 464. Phys. Rev. Lett. 64, 3042 (1990) , “Microscopic identification and electronic structure of a di-hydrogen–vacancy complex in silicon by optical detection of magnetic resonance”, W. M. Chen, O. O. Awadelkaim, B. Monemar, J. L. Lindström, G. S. Oehrlein.We present a microscopic identification of a hydrogen-related-complex defect in electron-irradiated, hydrogenated, boron-doped, single-crystalline silicon, by optical detection of magnetic resonance. The symmetry of this defect has been deduced as C2v, and from the observed hyperfine... (Read more)
- 465. Phys. Rev. Lett. 64, 2042 (1990) , “New insight into silicide formation: The creation of silicon self-interstitials ”, Maria Ronay and R. G. SchadDiffusion studies of Cu+Re and Re+CU films on silicon show that the formation of Cu3Si precursor lowers the formation temperature of ReSi2 from over 900 to 550 °C. The results are explained and generalized to all metal-rich silicides by the specific volume of silicon being... (Read more)
- 466. Solid State Commun. 76, 1083 (1990) , “Electrically detected magnetic resonance in p-n junction diodes ”, F. Rong, E. H. Poindexter, M. Harmatz and W. R. BuchwaldG. J. GerardiElectrically-detected magnetic resonance from spin-dependent recombination or generation has been observed in various Si p-n junction diodes. The g-values varied widely among similar diodes of different manufacture; most differed from Si damage at g ≈ 2.0055 reported by other researchers. The... (Read more)
- 467. Solid State Commun. 75, 115 (1990) , “Magnetic Resonance Spectroscopy of Zinc Doped Silicon”, H. E. Altink, T. Gregorkiewicz and C. A. J. AmmerlaanThe spin-Hamiltonian analysis is presented of five new electron paramagnetic resonance spectra observed in silicon after indiffusion of zinc impurity. On the basis of hyperfine interactions one of the spectra is identified with a monoclinic ZnCu pair, while another spectrum arises from a trigonal... (Read more)
- 468. Solid State Commun. 74, 1003 (1990) , “Observation of dipolar interactions in a dilute two-dimensional spin system: °Si ≡ Si3 defects at the (1 1 1)Si/SiO2 interface”, A. Stesmans, G. Van Gorp.K-band spectron spin resonance spectra measured at 4.3 K reveal for the first time dipole-dipole (DD) interaction effects between [1 1 1]Pb centers. These are °Si ≡ Si3 defects with unpaired sp3 hybrid |[1 1 1] located at the essentially 2-dimensional (1 1 1)Si/SiO2 interface. Both line... (Read more)
- 469. Solid State Commun. 73, 393 (1990) , “Electron paramagnetic resonance of nickel in silicon. — I. Identification of spectrum”, L. S. Vlasenko, N. T. Son, A. B. van Oosten, C. A. J. Ammerlaan, A. A. Lebedev, E. S. Taptygov, V. A. KhramtsovResults are reported on the paramagnetic resonance spectrum recently identified with the negatively charged state of substitutional nickel in n-type silicon. Studies were made on the presence of the spectrum in silicon with different concentrations of phosphorus doping and under various conditions... (Read more)
- 470. Sov. Phys. Semicond. 24, 851 (1990) , “Electron Spin Resonance of FeFeB Complexes in Silicon”, A. A. Ezhevski?, C. A. J. Ammerlaan.
- 471. Sov. Phys. Solid State 32, 1292 (1990) , “Relationship between a Combined Resonance in Plastically Deformed n-Type Silicon with a Dislocation Structure”, V. V. Kveder, T. R. Mchedlidze, Yu. A. Osip’yan, A. I. Shalynin.
- 472. Appl. Phys. A 49, 123 (1989) , “Thermal double donors in silicon ”, P. Wagner and J. HageA family of double donors with only slightly differing binding energies can be generated in silicon containing oxygen. In the 30 years since they were discovered the microscopic structure of these defects has not been unravelled in spite of being investigated with all the tools of solid state physics. (Read more)
- 473. Appl. Phys. A 48, 59 (1989) , “Indium-defect complexes in silicon studied by perturbed angular correlation spectroscopy ”, Th. Wichert, M. Deicher, G. Grbel, R. Keller, N. Schulz and H. SkudlikThe formation of molecule-like complexes, consisting of a defect and a radioactive 111In atom, is studied using the perturbed γγ angular correlation technique (PAC). The complexes are characterized by their defect specific electric field gradients which also contain information on the geometry of the formed complexes. Whereas the complex is formed with the111In atom, its electric field gradient is measured after the decay of the radioactive 111In atom to 111Cd. Formation and dissolution of the molecule-like complexes is pursued for a variety of different conditions, such as sample temperature, dopant concentration and position of the Fermi level. In particular, the interaction of In atoms with the following defects in Si was investigated: Intrinsic defects, created by particle irradiation; substitutional donor atoms (P, As, Sb, Bi); and interstitial impurity atoms (Li, H, and an unidentified X defect); especially, the latter ones are known to passivate acceptor atoms in Si. Methodology and specific properties of the PAC technique will be illustrated with the help of these examples. (Read more)
- 474. IEEE Trans. Nucl. Sci. 36, 1800-1807 (1989) , “A spin dependent recombination study of radiation induced defects at and near the Si/SiO2 interface”, M. A. Jupina , P. M. Lenahan
- 475. J. Appl. Phys. 66, 780 (1989) , “P-Rich Si Particles in Separation by Implanted Oxygen Structures Revealed by Low-Temperature Electron-Spin Resonance”, G. Van Gorp and A. StesmansLow-temperature X- and K-band electron-spin-resonance measurements on separation by implanted oxygen structures formed by implanting oxygen to a dose 1.7×1018 cm2 on [001] c-Si wafersboth n and p type [dopant concentration... (Read more)
- 476. J. Appl. Phys. 66, 3026 (1989) , “Perturbed angular correlation studies of dopant atom interactions in silicon”, Th. Wichert and M. L. SwansonThe perturbed angular correlation (PAC) technique was used to study the interaction of implanted 111 In probe atoms with the donor atoms P, As, and Sb in Si. Nearest-neighbor pairs of In-P, In-As, and In-Sb atoms, characterized by Q1 =179(1), 229(1), and 271(1) MHz,... (Read more)
- 477. J. Appl. Phys. 65, 600 (1989) , “A new family of thermal donors generated around 450 °C in phosphorus-doped Czochralski silicon”, Yoichi Kamiura, Fumio Hashimoto, and Minoru YonetaWe have discovered a new family of oxygen-related double donors [new thermal donors (NTD's)] generated around 450 °C in phosphorus-doped Czochralski silicon by combining deep-level transient spectroscopy with Hall measurements. This new family was well distinguished from the normal family of... (Read more)
- 478. J. Appl. Phys. 65, 2723 (1989) , “Theoretical model for self-interstitial generation at the Si/SiO2 interface during thermal oxidation of silicon”, Kenji Taniguchi, Yoshiaki Shibata, and Chihiro HamaguchiUsing a grating pattern of parallel nitride and oxide stripes on the silicon surface, self-interstitial concentration at the Si/SiO2 interface is accurately determined by means of oxidation-induced stacking fault growth observation. The results show that the interstitial concentration at... (Read more)
- 479. J. Electrochem. Soc. 136, 2025 (1989) , “Correction Factors for the Determination of Oxygen in Silicon by IR Spectrometry”, F. Schomann and K. Graff
- 480. J. Electrochem. Soc. 136, 2015 (1989) , “Interlaboratory Determination of the Calibration Factor for the Measurement of the Interstitial Oxygen Content of Silicon by Infrared Absorption”, A. Baghdadi and W. M. Bullis and M. C. Croarkin and Yue-zhen Li and R. I. Scace and R. W. Series and P. Stallhofer and M. Watanabe
- 481. J. Phys.: Condens. Matter 1, 35 (1989) , “The Structure of Chalcogen Pairs in Silicon”, S. Greulich-Weber, J. R. Niklas, J. M. Spaeth.The chalcogen pair centres (S-S)+ and (Se-Se)+ in Si were investigated with electron-nuclear double resonance (ENDOR). It was possible to resolve the superhyperfine interactions with 16 shells ((S-S)+) and 20 shells ((Se-Se)+) of 29Si neighbours... (Read more)
- 482. Jpn. J. Appl. Phys. 28, 142 (1989) , “Electron Spin Resonance of Oxygen-Nitrogen Complex in Silicon”, A. Hara, T. Fukuda, T. Miyabo, I. Hirai.We observed the electron spin resonance of oxygen-nitrogen complexes (ONCs) and found that they have C2V symmetry. Although they contain nitrogen, hyperfine interaction (hf) with nitrogen cannot be clearly observed. These characters of ONCs resemble thermal donors (TDs) very closely. (Read more)
- 483. Jpn. J. Appl. Phys. 28, 1402 (1989) , “Method for Estimating Accurate Deep-Trap Densities from DLTS of Junctions Containing Several Kinds of Deep-Traps ”, Hiroshi Nakashima and Kimio HashimotoThe density of a deep trap is estimated from the peak height of the DLTS signal and the steady-state capacitance on a reverse-biased semiconductor junction. When several kinds of traps exist in the depletion region and the trap densities are not much smaller than the net shallow-level density, a... (Read more)
- 484. Phys. Rev. B 40, 4054 (1989) , “Oxygen-Vacancy Complex in Silicon. II. 17O Electron-Nuclear Double Resonance”, R. van Kemp, M. Sprenger, E. G. Sieverts, C. A. J. Ammerlaan.An electron-nuclear double-resonance (ENDOR) study was performed on the negatively charged oxygen-vacancy complex in silicon. By introducing the isotope 17O (nuclear spin I=(5/2) to an enrichment of about 40%, it was possible to detect ENDOR transitions of this nucleus. In the experiment... (Read more)
- 485. Phys. Rev. B 40, 4037 (1989) , “Oxygen-Vacancy Complex in Silicon. I. 29Si Electron-Nuclear Double Resonance”, R. van Kemp, E. G. Sieverts, C. A. J. Ammerlaan.The negative charge state of the oxygen-vacancy complex in silicon has been studied by electron-nuclear double resonance. Hyperfine interactions between the unpaired electron and 29Si nuclei in 50 shells of neighboring lattice sites have been determined. These shells contain 145 lattice... (Read more)
- 486. Phys. Rev. B 40, 1732 (1989) , “Structure of Thermal Donors (NL8) in Silicon: A Study with Electron-Nuclear Double Resonance”, J. Michel, J. R. Niklas, J. –M. Spaeth.Singly ionized thermal donors [(TD)+], which give rise to the NL8 ESR spectrum, were investigated with electron-nuclear double resonance (ENDOR) in B-doped Czochralski-grown silicon and float-zone silicon into which the magnetic isotope 17O was diffused. TD’s were formed by... (Read more)
- 487. Phys. Rev. B 40, 11644 (1989) , “Hydrogen bonding and diffusion in crystalline silicon”, K. J. ChangThe nature of hydrogen bonding and diffusion in crystalline Si was investigated using an ab initio self-consistent pseudopotential method. The relative energies of interstitial atomic hydrogen, diatomic hydrogen complexes, and shallow dopant-hydrogen complexes were examined. We present a mechanism... (Read more)
- 488. Phys. Rev. B 39, 7978 (1989) , “Structure of the Heat-Treatment Centers NL8 and NL10 in Silicon”, J. Michel, N. Meilwes, J. –M. Spaeth.An electron-spin-resonance investigation on n-type (P-doped) and an electron-nuclear double-resonance (ENDOR) investigation on p-type (B- and Al-doped) Czochralski-grown oxygen-rich Si was performed after annealing at 460 °C and formation of the heat-treatment centers Si-NL8 and Si-NL10. The NL10... (Read more)
- 489. Phys. Rev. B 39, 2864 (1989) , “Observation of the Localized Si Dangling-Bond Pb Defect at the Si/Si3N4 Interface”, A. Stesmans, G. Van Gorp.Low-temperature electron-spin resonance (ESR) reveals the presence of the Pb defect (identified with Si?Si3) at the thermally grown (111)Si/Si3N4 interface. This constitutes the first observation of this defect (called PbN) at a natural Si/solid... (Read more)
- 490. Phys. Rev. B 39, 1648 (1989) , “Silicon Electron-Nuclear Double-Resonance Study of the NL10 Heat-Treatment Center”, H. H. P. Th. Bekman, T. Gregorkiewicz, and C. A. J. Ammerlaan29Si electron-nuclear double-resonance (ENDOR) measurements were performed for the Si-NL10 center. The results were compared with the 29Si ENDOR measurements of the Si-NL8 spectrum and were found to be similar with the defect electron being even more delocalized in the case of... (Read more)
- 491. Phys. Rev. B 39, 13327 (1989) , “Structure of the 0.767-eV oxygen-carbon luminescence defect in 450 °C thermally annealed Czochralski-grown silicon”, W. Kürner, R. Sauer, A. Dörnen, and K. ThonkeThe oxygen-carbon luminescence defects with no-phonon emission at 0.767 eV (‘‘P line’’) and 0.79 eV (‘‘C line’’) created in pulled silicon after 450 °C thermal annealing or electron irradiation, respectively, are investigated in a comparative study. This includes investigation of... (Read more)
- 492. Phys. Rev. B 39, 10809 (1989) , “Microscopic structure of the hydrogen-boron complex in crystalline silicon”, P. J. H. Denteneer, C. G. Van de Walle, and S. T. PantelidesThe microscopic structure of hydrogen-boron complexes in silicon, which result from the passivation of boron-doped silicon by hydrogen, has been extensively debated in the literature. Most of the debate has focussed on the equilibrium site for the H atom. Here we study the microscopic structure of... (Read more)
- 493. Phys. Rev. B 39, 10791-10808 (1989) , “Theory of hydrogen diffusion and reactions in crystalline silicon”, Chris G. Van de Walle, P. J. H. Denteneer, Y. Bar-Yam, and S. T. PantelidesThe behavior of hydrogen in crystalline silicon is examined with state-of-the-art theoretical techniques, based on the pseudopotential-density-functional method in a supercell geometry. Stable sites, migration paths, and barriers for different charge states are explored and displayed in total-energy... (Read more)
- 494. Phys. Rev. Lett. 63, 1027 (1989) , “Quantum or classical motion of H in Si:B?”, A. M. StonehamA Comment on the letter by M. Stavola et al., Phys. Rev. Lett. 61, 2786 (1988). (Read more)
- 495. Phys. Rev. Lett. 62, 1884 (1989) , “Structure and properties of hydrogen-impurity pairs in elemental semiconductors”, P. J. H. Denteneer, C. G. Van de Walle, and S. T. PantelidesA variety of experiments have revealed several puzzling properties of hydrogen-impurity pairs. For example, H atoms passivate the electrical activity of some impurities, whereas they induce electrical activity in others; they appear to tunnel around some impurities but not around others. We report... (Read more)
- 496. Phys. Rev. Lett. 58, 1780 (1989) , “Determination of the electronic structure of anomalous muonium in GaAs from nuclear hyperfine interactions ”, R. F. Kiefl, M. Celio, T. L. Estle, G. M. Luke, S. R. Kreitzman, J. H. Brewer, D. R. Noakes, E. J. Ansaldo, and K. NishiyamaNuclear hyperfine structure of the anomalous muonium center (Mu*) in GaAs has been resolved in muon-spin-rotation frequency spectra and studied in detail by level-crossing-resonance spectroscopy. A comparison of the measured hyperfine parameters with the free-atom values indicates that... (Read more)
- 497. phys. stat. sol. (b) 156, 325 (1989) , “EPR of Lithium-Induced Silicon-5dn Pairs in Silicon”, M. Höhne.A platinum-analogue to the lithium-induced silicon-gold pair, previously investigated, is now detected by EPR. The results underline the close similarity of platinum- and gold-related defects in silicon and suggest a remark concerning the absence of an EPR-proof of the isolated gold defect, contrary... (Read more)
- 498. Semicond. Sci. Technol. 4, 1045-1060 (1989) , “Spin-dependent and localisation effects at Si/SiO2 device interfaces”, B. Henderson , M. Pepper , R. L. Vranch
- 499. Semicond. Sci. Technol. 4, 1000 (1989) , “The .Si ≡ Si3 defect at various (111)Si/SiO2 and (111)Si/Si3N4 interfaces”, A. Stesmans.The low-temperature (2 ≤ T ≤ 45 K) X- and K-band electron spin resonance (ESR) properties of the Si/SiO2 interfacial (111) PbO defect-identified with .Si ≡ Si3 and with the unpaired sp3 hybrid along (111)-as localised at three 'different'... (Read more)
- 500. Solid State Commun. 70, 807 (1989) , “EPR Identification of a Trigonal FeIn Defect in Silicon”, P. Omling, P. Emanuelsson, W. Gehlhoff and H. G. GrimmeissA new electron paramagnetic resonance signal is observed in silicon which has been co-doped with indium and iron. The spectrum shows trigonal symmetry, and the involvement of one Fe and one In atom is proven from the observed hyperfine interactions. The defect is identified as an InS-Fei pair... (Read more)
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