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- 301. Solid State Commun. 102, 595 (1997) , “Thermally Activated Change of Symmetry of Carbon Related Center in Irradiated Silicon”, M. M. Afanasjev,R. Laiho, L. S. Vlasenko and M. P. VlasenkoTwo electron paramagnetic resonance (EPR) spectra related to the excited spin-1 state of a carbon-silicon-carbon complex are detected in irradiated silicon with microwave spin dependent photoconductivity measurements. They indicate transformation of the complex from monoclinic to trigonal symmetry... (Read more)
- 302. Appl. Phys. Lett. 69, 3854 (1996) , “Electron Paramagnetic Resonance of Erbium Doped Silicon”, J. D. Carey, J. F. Donegan, R. C. Barklie, F. Priolo, G. Frenzò, S. Coffa.Electron paramagnetic resonance measurements have been made on samples of float zone silicon, implanted with 1015 Er/cm2. One sample was coimplanted with oxygen to give an impurity concentration of 1020 O/cm3 and 1019 Er/cm3. In this... (Read more)
- 303. Appl. Phys. Lett. 68, 2723 (1996) , “Revision of H2 passivation of Pb interface defects in standard (111)Si/SiO2”, A. Stesmans.Passivation with molecular H2 of Pb interface defects in thermal (111)Si/SiO2 (dry; 870 °C) over extended temperature (TH) and time (tH) ranges unveil nonexponential decay of [Pb] vs... (Read more)
- 304. Appl. Phys. Lett. 68, 2076 (1996) , “Passivation of Pb0 and Pb1 Interface Defects in Thermal (100) Si/SiO2 with Molecular Hydrogen”, A. Stesmans.It is found that the passivation of both the Pb0 and Pb1 defects in (100)Si/SiO2 (grown at < 750 °C) with molecular H2 may well be described by the same defect- H2 reaction-limited kinetic model applying to... (Read more)
- 305. Appl. Phys. Lett. 68, 1669 (1996) , “Electrically detected magnetic resonance study of stress-induced leakage current in thin SiO2”, J. H. StathisA spin-dependent trap-assisted tunneling current has been detected in a thin (44.5 Å) SiO2 film. An electron paramagnetic resonance signal, obtained from the tunnel current, provides the first microscopic information regarding the identity of defects responsible for stress-induced... (Read more)
- 306. Appl. Phys. Lett. 68, 1102 (1996) , “Electrical Detection of Electron Nuclear Double Resonance in Silicon”, B. Stich, S. Greulich-Weber, J. –M. Spaeth.Electrical detection of electron nuclear double resonance (EDENDOR) is demonstrated using shallow P donors in silicon. The EDENDOR spectra are compared with conventional ENDOR spectra. With EDENDOR, both the 31P hyperfine as well as 29Si superhyperfine interactions could be... (Read more)
- 307. J. Appl. Phys. 80, 6198 (1996) , “Recombination-enhanced Fe atom jump between the first and the second neighbor site of Fe–acceptor pair in Si”, S. Sakauchi, M. Suezawa, K. Sumino, H. Nakashima.We studied the recombination-enhanced Fe atom jump between the first (1st) and second (2nd) neighbor sites of FeAl and FeB pairs in Si. We first annealed specimens at 80 °C to generate Feacceptor pairs after doping of Fe. Concentrations of the 1st and 2nd neighbor... (Read more)
- 308. J. Appl. Phys. 80, 3435 (1996) , “Oxygen-Related 1-Platinum Defects in Silicon: An Electron Paramagnetic Resonance Study”, U. Juda, O. Scheerer, M. Höhne, H. Riemann, H.-J. Schilling, J. Donecker, and A. GerhardtA monoclinic 1-platinum defect recently detected was investigated more thoroughly by electron paramagnetic resonance (EPR). The defect is one of the dominating defects in platinum doped silicon. With a perfect reproducibility it is observed in samples prepared from n-type silicon as well as... (Read more)
- 309. J. Lumin. 66&67, 462 (1996) , “Spin-Dependent Dynamical Processes of Excited States in Semiconductors”, J. –M. Spaeth.Semiconductors with donors and acceptors can be brought into excited states by illumination with above-band-gap light. In a magnetic field, the recombination of donor electrons and acceptor holes is spin-dependent and can be used to detect electron paramagnetic resonance electrically (EDEPR).... (Read more)
- 310. J. Non-Cryst. Solids 198-200, 267 (1996) , “Semiclassical model of electrically detected magnetic resonance in undoped a-Si:H”, K. Lips, C. Lerner and W. FuhsA simple model for spin-dependent photoconductivity is presented based on rate equations for the density of spin pairs in singlet and triplet configuration. The pairs are formed by electrons localized in the conduction band tail and neutral dangling bonds (e—D°). We take into... (Read more)
- 311. J. Phys.: Condens. Matter 8, L505 (1996) , “Creation of Pb Interface Defects in Thermal Si/SiO2 through Annealing”, A. Stesmans, V. V. Afanas’ev.The generation of paramagnetic interfacial defects (Si ) in standard thermal by thermal processing has been studied in the temperature range . Besides consolidating the well known dissociation (activation) process (prominent from approximately onward) of pre-existing entities, electron spin... (Read more)
- 312. JETP 83, 829 (1996) , “Influence of the Splitting of Dislocations on the g Factor of Holes in a One-Dimensional Dislocation Band”, V. V. Kveder, A. I. Shalynin, É. A. Shte?nman, A. N. Izotov.
- 313. Jpn. J. Appl. Phys. 35, 3937 (1996) , “Hydrogen Passivation of Donors and Hydrogen States in Heavily Doped n-Type Silicon”, N. Fukata, S. Sasaki, S. Fujimura, H. Haneda, K. Murakami.We have studied hydrogen passivation of phosphorus (P) donors and hydrogen states in heavily doped n-type silicon by electron spin resonance (ESR) of P donors and conduction electrons. A remote-treatment method of atomic hydrogen was used for the introduction of H atoms. The hydrogen... (Read more)
- 314. Mater. Sci. Eng. B 38, 138 (1996) , “Process development for III–V nitrides”, S. J. Pearton, C. R. Abernathy, F. Ren, R. J. Shul, S. P. Kilcoyne, M. Hagerott-Crawford, J. C. Zolper, R. G. Wilson, R. G. Schwartz and J. M. ZavadaAdvances in GaN-based electronic and photonic devices requires improved patterning methods, better Ohmic contacts and higher p-type dopong levels. In this paper, new developments in dry and wet etching. Ohmic contacts and epitaxial growth of III–V nitrides are reported. We find that high ion... (Read more)
- 315. Mater. Sci. Eng. B 36, 77 (1996) , “New Oxygen-Related EPR Spectra in Proton-Irradiated Silicon”, Kh. A. Abdullin, B. N. Mukashev, A. M. Makhov and Yu. V. GorelkinskiiAn electron-paramagnetic resonance (EPR) study of proton-irradiated silicon has revealed two new EPR spectra labeled Si-AA13 and Si-AA14. Spectrum AA13 has C3v symmetry (g = 1.9985 and g = 2.0024 ± 0.0002), AA14 C1 symmetry. These spectra correspond to positive (B+) and negative (B−)... (Read more)
- 316. Mater. Sci. Eng. B 36, 133 (1996) , “EPR of Interstitial Hydrogen in Silicon: Uniaxial Stress Experiments”, Yu. V. Gorelkinskii and N. N. NevinnyiThis paper deals with an electron paramagnetic resonance (EPR) study of the Si-AA9 EPR center, which has been previously identified as arising from a 111 bond-centered (BC) interstitial hydrogen in the neutral charge state (H0) and is a hydrogenic analog of the anomalous state of muonium (Mu*) in... (Read more)
- 317. Phys. Rev. B 54, R6803 (1996) , “Infrared Absorption in Silicon from Shallow Thermal Donors Incorporating Hydrogen and a Link to the NL10 Paramagnetic Resonance Spectrum”, R. C. Newman, J. H. Tucker, N. G. Semaltianos, E. C. Lightowlers, T. Gregorkiewicz, I. S. Zevenbergen, C. A. J. Ammerlaan.Shallow thermal donors (STDs), generated in Czochralski silicon, annealed at 470°C in a hydrogen plasma, and detected by their infrared (IR) electronic absorption, have ground states that shift slightly (?0.1 cm-1) to smaller binding energies, when deuterium is introduced instead of... (Read more)
- 318. Phys. Rev. B 54, R11129 (1996) , “Thermally Induced Interface Degradation in (111) Si/SiO2 Traced by Electron Spin Resonance”, A. Stesmans, V. V. Afanas’ev.Thermal post-oxidation interface degradation in (111) Si/SiO2 has been isolated by electron-spin resonance (ESR) as a permanent Pb (Si ? Si3) interface defect creation. This process, initiating from ?640 °C onward, reveals interface breakdown on an atomic scale as... (Read more)
- 319. Phys. Rev. B 54, 10543 (1996) , “Fourier-Transform Photoluminescence Spectroscopy of Excitons Bound to Group-III Acceptors in Silicon: Zeeman Effect”, V. A. Karasyuk, M. L. W. Thewalt, S. An, E. C. Lightowlers, A. S. Kaminskii.Photoluminescence of excitons bound to Al, Ga, In, and Tl acceptors in Si was studied at liquid-He temperatures in magnetic fields up to 14.5 T with ?001?, ?111?, and ?110? orientations with 0.0025-meV spectral resolution. All details of the Zeeman spectra for every field orientation, with up to 30... (Read more)
- 320. Phys. Rev. B 53, 12570 (1996) , “Electron Paramagnetic Resonance of a Au-Au Pair in Heat-Treated Silicon”, P. M. Williams, P. W. Mason, and G. D. WatkinsTwo previously unreported electron paramagnetic resonance centers of C2v symmetry, labeled Si-LAu1 and Si-LAu2, are observed in p-type gold-doped silicon after a heat treatment at 1250 °C. For one of them, Si-LAu2, complex resolved hyperfine structure reveals the presence of two... (Read more)
- 321. Phys. Rev. Lett. 77, 4600 (1996) , “Electronic Structure of Band-Tail Electrons in a Si:H”, T. Umeda, S. Yamasaki, J. Isoya, A. Matsuda, and K. TanakaElectronic structures of the light-induced electron spin resonance (LESR) centers in undoped a-Si:H have been investigated by means of pulsed ESR techniques. Overlapping LESR signals of g = 2.004 and 2.01 have been experimentally deconvoluted by using the difference in spin-lattice relaxation time... (Read more)Si| EPR| Silicon amorphous band-tail n-type p-type .inp files: Si/band-tail | last update: Takahide Umeda
- 322. Phys. Solid State 38, 549 (1996) , “Identification of Intrinsic Interstitial Complexes in Silicon by EPR”, G. O. Tozhibaev, Sh. M. Makhkamov, Yu. V. Gorelkinski?, N. A. Tursunov, M. A. Makhov.Although a large number of experimental papers on defect center states in silicon have been published, there is still not enough information on intrinsic interstitial defects. Of the large number of defects identified by EPR signals in irradiated silicon, only four centers (Si-G25, Si-A5, Si-B3, and Si-P6) are related to intrinsic interstitial complexes of silicon.
- 323. phys. stat. sol. (a) 157, 405 (1996) , “On the Nature of Deep Donors Created at 450 C in Boron-Doped p-Si”, V. M. Babich, N. P. Baran, M. Ya. Valakh, V. L. Kiritsa, G. Yu. Rudko.It is shown that the boron impurity in oxygen-rich p-Si is involved in the formation of electrically active complexes, namely, deep thermal donors, during thermal annealing at T = 450°C. The conclusion is based on experimental results obtained by several techniques such as Hall measurements,... (Read more)
- 324. Semicond. Sci. Technol. 11, 1696-1703 (1996) , “Metastable oxygen - silicon interstitial complex in crystalline silicon”, Kh. A. Abdullin, B. N. Mukashev, Yu. V. Gorelkinskii.A new metastable complex in monocrystalline silicon irradiated at with protons has been studied. Electron paramagnetic resonance (EPR) Si-AA13 ( symmetry) and Si-AA14 ( symmetry) spectra as well as the known Si-A18 spectrum originate from different molecular configurations of the complex. A... (Read more)
- 325. Semiconductors 30, 1055 (1996) , “Detection of Paramagnetic Recombination Centers in Irradiated Silicon p-n Jundtions”, M. M. Afanas’ev, M. P. Vlasenko, V. N. Lomasov, A. V. Militsyn.
- 326. Solid State Commun. 97, 255 (1996) , “Comparative Analysis of the H2 Passivation of Interface Defects at the (100)Si/SiO2 Interface Using Electron Spin Resonance”, A. Stesmans.The passivation with molecular hydrogen in the range 213–234°C of the interfacial Pb0 and Pb1 defects in (100)Si/SiO2, thermally grown at low temperature (<750°C), has been analyzed by K-band electron spin resonance. The passivation kinetics are found to be well described by the... (Read more)
- 327. Surf. Sci. 352-354, 793 (1996) , “Pb1 defect study and chemical characterization of the Si(001)---SiO2 interface in oxidized porous silicon”, J. L. Cantin, M. Schoisswohl, H. J. von Bardeleben, F. Rochet, G. Dufour.In comparison with oxidized bulk crystals, we show that the morphology of oxidized porous silicon can offer a unique opportunity of measuring suboxide distribution by conventional XPS and to characterize thoroughly interfacial defects by EPR. (Read more)
- 328. Appl. Phys. Lett. 66, 1521 (1995) , “Temperature dependent electrically detected magnetic resonance studies on silicon pn diodes”, P. Christmann, W. Stadler, and B. K. MeyerWe report on electrically detected magnetic resonance (EDMR) studies in silicon pn diodes in the temperature range from 30 to 300 K. In the range from 150 to 300 K the resonance effect is, as usually observed, much larger than expected by spin polarization. From 150 K down to 30 K the spin... (Read more)
- 329. J. Appl. Phys. 78, 3874 (1995) , “The erbium-impurity interaction and its effects on the 1.54 µm luminescence of Er3 + in crystalline silicon”, F. Priolo, G. Franzò, S. Coffa, A. Polman, S. Libertino, R. Barklie, D. Carey.We have studied the effect of erbium-impurity interactions on the 1.54 µm luminescence of Er3 + in crystalline Si. Float-zone and Czochralski-grown (100) oriented Si wafers were implanted with Er at a total dose of ~1×1015/cm2. Some samples were also... (Read more)
- 330. J. Appl. Phys. 78, 3077 (1995) , “Generation and Dissociation of Complexes of Iron and Phosphorus Atoms in Silicon”, Hideki Takahashi, Masashi Suezawa, and Koji SuminoTo examine the possibility of generating complexes of iron and phosphorus atoms in silicon, neutral interstitial iron in phosphorus doped silicon crystals with various concentrations were measured with the electron spin resonance (ESR) method after cooling from high temperature at various cooling... (Read more)
- 331. J. Appl. Phys. 77, 6205 (1995) , “Dissociation Kinetics of Hydrogen-Passivated (100) Si/SiO2 Interface Defects” J. H. Stathis.”, J. H. StathisThe activation energy for thermal dissociation of hydrogen from silicon dangling-bond defects (Pb centers) has been measured using both (111)- and (100)-oriented samples. The behavior of each of the three Pb varieties [P111b"... (Read more)
- 332. J. Appl. Phys. 77, 1546 (1995) , “Electrical Detection of Electron Paramagnetic Resonance: New Possibilities for the Study of Point Defects”, B. Stich, S. Greulich-Weber, J. –M. Spaeth.An investigation of the possibilities to measure electron paramagnetic resonance (EPR) with electrical detection (EDEPR) by measuring the microwave or radio frequency-induced change of the photoconductivity of various bulk Si samples containing shallow and deep level defects is presented. It was... (Read more)
- 333. Jpn. J. Appl. Phys. 34, 5483-5488 (1995) , “Effects of Grown-in Hydrogen on Lifetime of Czochralski Silicon Crystals ”, Akito HaraI studied the effects of grown-in hydrogen on the lifetime of Czochralski-grown silicon crystals. It was found that grown-in hydrogen degraded the electrical properties of Czochralski-grown silicon crystals by enhancing the formation of recombination centers, which had a high thermal stability... (Read more)
- 334. Jpn. J. Appl. Phys. 34, 3418 (1995) , “Hydrogen-like Ultrashallow Thermal Donors in Silicon Crystals”, A. Hara.I investigated the electrical properties of annealed carbon- and nitrogen-rich Czochralski-grown silicon crystals using optical absorption and electron spin resonance, and I discovered the formation of a new kind of hydrogen-like donors,... (Read more)
- 335. Phys. Rev. B 52, 5007 (1995) , “Aggregate Defects of Gold and Platinum with Lithium in Silicon: II. Electronic-Structure Calculations”, H. Weihrich, H. Overhof, P. Alteheld, S. Greulich-Weber, J. –M. Spaeth.We present ab initio total energy calculations for aggregate defects of the noble metals Pt or Au with Li. The calculations are performed in the local spin density approximation to the density-functional theory using the linear-muffin-tin-orbital method in the atomic spheres approximation. We... (Read more)
- 336. Phys. Rev. B 52, 4998 (1995) , “Aggregate Defects of Gold and Platinum with Lithium in Silicon: I. Magnetic Resonance Investigations”, P. Alteheld, S. Greulich-Weber, J. –M. Spaeth, H. Weihrich, H. Overhof, M. Höhne.Trigonal and orthorhombic Au (Pt) defects in Si additionally doped with Li and P, previously investigated with electron paramagnetic resonance (EPR), are shown to be aggregate defects involving substitutional Au (Pt) and interstitial Li. The small Li hyperfine interactions, not resolved in EPR,... (Read more)
- 337. Phys. Rev. B 52, 16575 (1995) , “Vacancy Model for Substitutional Ni-, Pd-, Pt-, and Au0 in Silicon”, G. D. Watkins, P. M. Williams.The vacancy model for the electronic structure in silicon of substitutional transition elements near the end of the 3d, 4d, and 5d series is described and a simplified theoretical treatment for their paramagnetic properties is presented. It is concluded that the complete set of such impurities for... (Read more)
- 338. Phys. Rev. B 52, 1144 (1995) , “Electron Paramagnetic Resonance Versus Spin-Dependent Recombination: Excited Triplet States of Structural Defects in Irradiated Silicon”, L. S. Vlasenko, Yu. V. Martynov, T. Gregorkiewicz, C. A. J. Ammerlaan.Upon illumination some structural defects in irradiated silicon can be excited into the metastable triplet S=1 states. These triplet states can be involved in the excess-carriers recombination process. This paper provides a theoretical treatment of spin-dependent recombination (SDR) via an excited... (Read more)
- 339. Phys. Rev. B 51, 9612 (1995) , “Microscopic Structure and Multiple Charge States of a PtH2 Complex in Si”, S. J. Uftring, M. Stavola, P. M. Williams, G. D. Watkins.The structure and electrical properties of a PtH2 complex in Si have been studied by vibrational spectroscopy and electron paramagnetic resonance (EPR). The PtH2 complex has been found to introduce two levels in the Si band gap. One level was identified previously and lies near... (Read more)
- 340. Phys. Rev. B 51, 16746 (1995) , “Electron-Paramagnetic-Resonance Identification of Hydrogen-Passivated Sulfur Centers in Silicon”, I. S. Zevenbergen, T. Gregorkiewicz, and C. A. J. AmmerlaanTwo centers are detected in hydrogenated sulfur-doped silicon by means of electron paramagnetic resonance. Both defects, labeled for further reference Si-NL54 and Si-NL55, are very similar and have trigonal symmetry; to better resolve the spectra, the field-scanned electron nuclear double resonance... (Read more)
- 341. Phys. Rev. B 51, 16721 (1995) , “Electronic states associated with dislocations in p-type silicon studied by means of electric-dipole spin resonance and Deep-Level Transient Spectroscopy”, V. Kveder, T. Sekiguchi, K. Sumino.Dislocation loops consisting of long and straight segments of 60° and screw parts were introduced in p-type Si by deformation under a high stress at a relatively low temperature. Electronic states associated with such dislocations were investigated by means of electric-dipole spin resonance, with... (Read more)
- 342. Phys. Rev. Lett. 74, 2030 (1995) , “Role of Hydrogen in the Formation and Structure of the Si-NL10 Thermal Donor”, Yu. V. Martynov, T. Gregorkiewecz, C. A. J. Ammerlaan.Microscopic evidence of a prominent role of hydrogen in the formation and structure of the Si- NL10 thermal donor is presented. Hyperfine interactions with the 1H nucleus have been detected and analyzed by means of electron-nuclear double resonance (ENDOR) and field-scanned ENDOR. Based... (Read more)
- 343. phys. stat. sol. (b) 189, K1 (1995) , “Charge States of Interstitial Defects in Implanted Silicon and Their Annealing Temperatures”, M. Jadan, N. I. Berezhnov, A. R. Chelyadinskii.In radiation physics of silicon a "vacancy" period has persisted for quite a long time. From a number of investigations it has been inferred that a divacancy is the main defect, stable at room temperature in silicon irradiated by fast neutrons and irons[1 to 3]. The concentrations of stable... (Read more)
- 344. Physica B 215, 404 (1995) , “Microwave Conductivity and Spin Resonance of Si-nK Centers at Dislocation Dipoles in Silicon”, A. A. Konchits, B. D. Shanina.Non-resonance microwave absorption (NRMA) due to microwave conductivity (MC) of Czochralski-grown silicon crystal has been studied. The temperature dependence of the MC was measured in the temperature range from 1.7 to 40 K in darkness as well as under the interband light. Exponential growth of the... (Read more)
- 345. Semicond. Sci. Technol. 10, 977 (1995) , “EPR and ENDOR Observation of Orthorhombic Au-Li and Pt-Li Pairs in Silicon: on the Problem of the Observation of Isolated AuSi0 with Magnetic Resonance”, S. Greulich-Weber, P. Alteheld, J. Reinke, H. Weihrich, H. Overhof, J. M. Spaeth.We report the observation of orthorhombic Au-Li and Pt-Li pairs in Si using EPR and ENDOR techniques and also MCDA spectroscopy. The EPR spectra alone could be mistaken as being due to orthorhombic isolated point defects and ENDOR is required to detect the Li partner of the pair. Comparison of the... (Read more)
- 346. Semicond. Sci. Technol. 10, 1645 (1995) , “Deep levels in silicon after iron silicide formation”, U Erlesand and M OstlingDeep level transient spectroscopy (DLTS) characterization was performed after forming iron silicides on silicon by a solid state reaction at 450-850 degrees C. No deep levels were discovered in n-type silicon when the reaction took place on cleaned previously unprocessed wafers. When the silicide... (Read more)
- 347. Solid State Commun. 96, 397 (1995) , “Oxidation temperature dependent restructuring of the Pb defect at the (1 1 1) Si/SiO2 interface”, A. Stesmans.Previous electron spin resonance work has unveiled distinct variations in g|| of the Pb interface defects (oSi=Si3) in (1 1 1) Si/SiO2 structures upon upwards crossing of the oxidation temperature range Tox = 750–850°C. These are a drop in g|| of δg|| 0.00008 and a collapse... (Read more)
- 348. Solid State Commun. 93, 383 (1995) , “Gold in Silicon and Other Analogous Donors and Acceptors”, Mats Kleverman, AnnaLena Thilderkvist, Günter Grossmann, Hermann G. Grimmeiss and George D. WatkinsRecent results on the substitutional Au and interstitial Fe deep-level impurities in silicon are discussed in some detail. Their excitation spectra are due to transitions from a deep ground state to shallow states. The good understanding of the electronic structure of the shallow states as well as... (Read more)
- 349. Appl. Phys. Lett. 65, 3260 (1994) , “Paramagnetic centers at and near the Si/SiOx interface in porous silicon”, B. Pivac, B. Rakvin, L. Pavesi.Formation of paramagnetic centers in aged porous silicon samples is studied by electron paramagnetic resonance. Samples oxidized by aging in air at room temperature exhibit the Pb centers as dominant defects. These are formed at the interfaces between the Si nanocrystallites... (Read more)
- 350. Appl. Phys. Lett. 64, 1690 (1994) , “Temperature-dependent study of spin-dependent recombination at silicon dangling bonds”, D. Vuillaume, D. Deresmes, and D. StiévenardElectrical detection of magnetic resonance is used in a large temperature range (150350 K) to analyze the spin-dependent recombination properties of silicon dangling bonds at the Si-SiO2 interface (created by high-field electron injections) and of silicon dangling bond clusters in... (Read more)
- 351. Hyperfine Interactions 84, 397 (1994) , “Studies of divacancy in Si using positron lifetime measurement ”, Studies of divacancy in Si using positron lifetime measurementThe charge state dependence of positron lifetime and trapping at divacancy (V2) in Si doped with phosphorus or boron has been studied after 15 McV electron irradiation up to a fluence of 8.0×1017 e/cm2. The positron trapping cross sections for V2 2-, V2 – and V2 0 at 300 K were about 6×10-14, 3×10-14 and 0.1–3×10-14 cm2, respectively. For V2 + , however, no positron trapping was observed. The marked difference in the cross sections comes from Coulomb interaction between the positron and the charged divacancy. The trapping rates for V2 0 and V2 2- have been found to increase with decreasing temperature in the temperature range of 10–300 K. These results are well interpreted by a two-stage trapping model having shallow levels with energy of 9 meV (V2 0 ) and 21 meV (V2 2- ). The appearance of a shallow level for V2 0 can not be explained by a conventional "Rydberg state" model. The lifetime (290–300 ps) in V2 0 is nearly constant in the temperature range from 10 to 300 K, while that in V2 2- increases from 260 ps at 10 K to 320 ps at 300 K. The lifetime (260 ps) in V2 2- is shorter than that in V2 0 at low temperature, which is due to the excess electron density in V2 2- . At high temperature, however, the longer lifetime of V2 2- than that of V2 0 is attributed to lattice relaxation around V2 2- . (Read more)
- 352. J. Appl. Phys. 75, 2929 (1994) , “Model for NL10 Thermal Donors Formed in Annealed Oxygen-Rich Silicon Crystals”, Akito Hara, Masaki Aoki, Masaaki Koizuka, and Tetsuo FukudaElectron spin resonance (ESR) studies have shown that NL10 thermal donors are formed in oxygen-rich silicon (Si) crystals after annealing. In initial NL10 formation stage, it has C2v symmetry with the principle g values g[100]=1.99982, g[01]=1.99799,... (Read more)
- 353. Jpn. J. Appl. Phys. 33, L1374 (1994) , “Defects Introduced by Ar Plasma Exposure in GaAs Probed by Monoenergetic Positron Beam ”, Akira Uedono, Takao Kawano1, Shoichiro Tanigawa, Kazumi Wada2 and Hideo Nakanishi2Ar-plasma-induced defects in n-type GaAs were probed by a monoenergetic positron beam. The depth distribution of the defects was obtained from measurements of Doppler broadening profiles of the annihilation radiation as a function of incident positron energy. The damaged layer induced by the... (Read more)
- 354. Jpn. J. Appl. Phys. 33, 1872 (1994) , “Temperature Dependence of ESR Lines Related to Phosphorus in Silicon”, M. Morooka, M. Tokita, T. Kato, I. Tsurumi.Temperature dependence of ESR in a silicon crystal containing 1.3×1017 phosphorus atoms/cm3 has been investigated at 4-40 K. The ESR signals depend strongly on the specimen temperature. Typical hyperfine structures of... (Read more)
- 355. Mater. Sci. Forum 143-147, 1337 (1994) , “Electrically detected electron paramagnetic resonance”, S.Greulich-Weber
- 356. Phys. Rev. B 50, 7365 (1994) , “S-Cu-related metastable complex defect in Si by optical detection of magnetic resonance”, W. M. Chen, M. Singh, B. Monemar, A. Henry, E. Janzén, A. M. Frens, M. T. Bennebroek, J. Schmidt.We present experimental results obtained on a S-Cu-related metastable complex defect in Si, by optical detection of magnetic resonance (ODMR) at the X band and the K band. Two photoluminescence emissions arising from the bound-exciton (BE) recombination at the defect in two different configurations... (Read more)
- 357. Phys. Rev. B 50, 15449 (1994) , “EPR and ENDOR Study of the Pb Center in Porous Silicon”, V. Ya. Bratus’, S. S. Ishchenko, S. M. Okulov, I. P. Vorona, H. J. von Bardeleben, M. Schoisswohl.The Pb center at the (111) Si-SiO2 interface has been studied with electron-nuclear-double-resonance (ENDOR) spectroscopy taking advantage of the high specific interface area of oxidized porous Si samples. The ENDOR spectrum consists only of two structureless lines at the... (Read more)
- 358. Phys. Rev. B 50, 1511 (1994) , “Electric-Dipole Spin-Resonance Study on Extended Defects in Czochralski-Grown Silicon Developed by Thermal Treatment”, T. R. Mchedlidze, V. V. Kveder, J. Jablonski, and K. SuminoA series of electric-dipole spin-resonance (EDSR) lines, termed Si-SC1 lines, are found to develop in Czochralski-grown Si crystals due to annealing at 650 °C. Some of these lines are very close to Si-2K and Si-3K reported in a previous work. The experimental data are self-consistently explained by... (Read more)
- 359. Phys. Rev. B 49, 7964 (1994) , “Electron Paramagnetic Resonance of Iron- and Aluminum-Related Defects in Silicon”, K. Irmscher, T. Kind, and W. GehlhoffSilicon codoped with aluminum and iron is investigated by electron paramagnetic resonance. Three spectra of trigonal, two of orthorhombic and two of monoclinic symmetry are detected and interpreted as being associated with iron- and aluminum-related defects. Most of the spectra are known but the... (Read more)
- 360. Phys. Rev. B 49, 16999 (1994) , “Distant Iron-Shallow-Donor Pairs in Silicon Detected by Electron Paramagnetic Resonance”, M. Höhne, U. Juda, H. Riemann, J. –M. Spaeth, S. Greulich-Weber.The electron-paramagnetic-resonance transitions of isolated neutral interstitial iron (Fei0) in n-type silicon show a satellite structure, which is clearly detectable for donor concentrations (P or As, respectively) above 1015 cm-3. The satellite structure... (Read more)
- 361. Phys. Rev. B 49, 16983 (1994) , “Electrical and thermal properties of structurally metastable iron-boron pairs in silicon ”, H. Nakashima, T. Sadoh, and T. TsurushimaStructurally metastable iron-boron pairs in silicon have been detected using dark- or photocapacitance transient techniques combined with minority-carrier injection below 200 K. Five levels at EC-0.43, 0.46, 0.52, and 0.54 eV and EV+0.53 eV are observed as the metastable... (Read more)
- 362. Phys. Rev. B 49, 13423 (1994) , “EPR Spectroscopy of Platinum-Hydrogen Complexes in Silicon”, M. Höhne, U. Juda, Yu. V. Martynov, T. Gregorkiewicz, C. A. J. Ammerlaan, L. S. Vlasenko.Two similar defects in silicon, resulting from doping with platinum in an atmosphere containing water vapor, were studied by means of electron paramagnetic resonance. Both spectra have effective electron spin S=1/2, and exhibit platinum- and hydrogen-related hyperfine structure and remarkable... (Read more)
- 363. Phys. Rev. B 49, 10307 (1994) , “Trigonal Manganese Cluster in Silicon: An Electron-Paramagnetic-Resonance Study”, J. Kreissl, W. Gehlhoff, H. Vollmer.Besides the known tetrahedral Mn40 cluster, a second Mn cluster is observed by electron paramagnetic resonance in high-resistivity silicon doped with manganese. The spectrum shows trigonal symmetry. The analysis of the fine structure and the hyperfine structure suggests that... (Read more)
- 364. Phys. Rev. Lett. 73, 3419 (1994) , “Non-Arrhenius Reorientation Kinetics for the B-H Complex in Si: Evidence for Thermally Assisted Tunneling”, Y. Michael Cheng and Michael StavolaThe B-H complex in Si can be aligned by stress and reorients with an activation energy of roughly 0.2 eV. We combine new measurements of the reorientation kinetics of the B-H complex made by the stress-induced dichroism technique with previous internal friction results to show that the reorientation... (Read more)
- 365. Phys. Rev. Lett. 73, 1457 (1994) , “Stallinga, Gregorkiewicz, and Ammerlaan Reply”, P. Stallinga, T. Gregorkiewicz, and C. A. J. AmmerlaanA drift instability due to electrons trapped in a series of shallow magnetic troughs has been observed and compared to theoretical estimates. The instability, identified as Kadomtsev's trapped-electron mode, is maximum at a density lower than estimated from the theory. (Read more)
- 366. Phys. Rev. Lett. 73, 1456 (1994) , “Comment on "Electron Paramagnetic Resonance of Molecular Hydrogen in Silicon"”, K. L. Brower, S. M. Myers, A. H. Edwards, N. M. Johnson, C. G. Van de Walle, E. H. Poindexter.Stallinga, Gregorkiewicz, Ammerlaan, and Gorelkinskii report the discovery of anew paramagnetic defect (NL52) in hydrogen-implanted and annealed silicon which they identify as s negatively charged <111> molecular hydrogen interstitial in silicon [1]. We discuss first the inconsistencies in this... (Read more)
- 367. Phys. Rev. Lett. 73, 130 (1994) , “Inverted order of acceptor and donor levels of monatomic hydrogen in silicon”, N. M. Johnson, C. Herring, and Chris G. Van de WalleThe acceptor level É›A of monatomic hydrogen (2H) in crystalline silicon has been located at É›A≊ɛm+0.00 eV, where É›m is the midgap level, more than 0.3 eV below the recently identified donor level. Thus, hydrogen has a large negative... (Read more)
- 368. Phys. Rev. Lett. 72, 2939 (1994) , “Observation of Rapid Direct Charge Transfer between Deep Defects in Silicon”, A. M. Frens, M. T. Bennebroek, A. Zakrzewski, J. Schmidt, W. M. Chen, E. Janzén, J. L. Lindström, B. Monemar.Direct electron transfer is observed between two deep defects in silicon upon selective laser excitation with an energy lower than the band gap. This transfer is shown to be very efficient when one of the defects is a pseudodonor and the other is a dominant recombination center. It is argued that... (Read more)
- 369. Phys. Rev. Lett. 72, 2745-2748 (1994) , “Atomic Hydrogen Reactions with Pb Centers at the (100) Si/SiO2 Interface”, J. H. Stathis, E. CartierWe have investigated the reaction of atomic hydrogen with defects at the (100) Si/SiO2 interface. Similar to previous results on the (111) interface, we find that the two paramagnetic defects at the (100) interface, Pb0 and Pb1, are either passivated or produced by... (Read more)
- 370. Proc. symp. on the degradation od electronic devices due to device operation as well as crystalline and process-induced defects 94-1, 221-234 (1994) , ECS (ISBN:1-56677-037-8) , “Spin dependent recombination in Si p-n junctions”, B. K. Meyer , P. Christmann , W. Stadler, H. Overhof, J.-M. Spaeth, S. Greulich-Weber, B. Stich
- 371. Rev.Mod.Phys 66, 841 (1994) , “Theory of positrons in solids and on solid surfaces ”, M. J. Puska and R. M. NieminenVarious experimental methods based on positron annihilation have evolved into important tools for researching the structure and properties of condensed matter. In particular, positron techniques are useful for the investigation of defects in solids and for the investigation of solid surfaces.... (Read more)
- 372. Semicond. Sci. Technol. 9, 1623 (1994) , “Thermal Donors in Silicon: an Investigation of Their Structure with Electron Nuclear Double Resonance”, N. Meilwes, J. –M. Spaeth, W. Götz, G. Pensl.Singly ionized thermal double donors (TDD+), which have the so-called NL8 EPR spectrum, have been investigated with electron nuclear double resonance (ENDOR) in silicon doped with various acceptors (Al,B,In,Ga). No differences were detected in the ENDOR spectra and no signals due to any... (Read more)
- 373. Semicond. Sci. Technol. 9, 1346 (1994) , “On the Nature and Structures of Different Heat Treatment Centres in n- and p-Type Silicon”, N. Meilwes, J. –M. Spaeth, V. V. Emtsev, G. A. Oganesyan.Thermally induced defects in oxygen-rich silicon are the thermal donors (TDDS) and the so-called NL10 defects. These defects are formed by annealing at temperatures around 450 degrees C. Whereas the TDDS have a unique nature, some NL10 defects probably have different structures in differently doped... (Read more)
- 374. Solid State Commun. 90, 401 (1994) , “Electron Paramagnetic Resonance Study of the NL51 Spectrum in Hydrogen-Implanted Silicon”, P. Stallinga, T. Gregorkiewicz, C. A. J. Ammerlaan, Yu. V. Gorelkinskii.High-resistivity silicon samples have been implanted with hydrogen and deuterium (dose 5 × 1015 cm−2). After a short heat treatment at low temperatures (20 min at 380–540°C) several electron paramagnetic resonance (EPR) spectra could be detected upon illumination. The most... (Read more)
- 375. Appl. Phys. Lett. 63, 920-922 (1993) , “Nature of Pb-like dangling-orbital centers in luminescent porous silicon”, F. C. Rong, J. F. Harvey, E. H. Poindexter, G. J. GerardiThe Pb-like dangling-orbit centers in luminescent porous silicon (LPSi) have been enhanced to very high concentration (1015 cm2) by gentle oxidation. High signal-to-noise ratio and very sharp lines enable the g-value maps, and... (Read more)
- 376. Appl. Phys. Lett. 63, 352 (1993) , “General expression for the electrically detected magnetic resonance signal from semiconductors”, Z. Xiong and D. J. MillerA general expression is obtained for the electrically detected magnetic resonance (EDMR) signal from semiconductors based on the electron-hole pair model. The expression is applicable for all values of the trapping, dissociation, and recombination rates of the levels involved. Measurements of the... (Read more)
- 377. Appl. Phys. Lett. 63, 1510-1512 (1993) , “Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen”, E. Cartier, J. H. Stathis, and D. A. BuchananAtomic hydrogen is found to simultaneously passivate and depassivate silicon dangling bonds at the Si(111)/SiO2 interface at room temperature via the reactions Pb+H0" align="bottom">PbH and... (Read more)
- 378. Appl. Phys. Lett. 62, 943 (1993) , “Cobalt self-diffusion during cobalt silicide growth”, M. Diale and C. Challens and E. C. ZinguThe flux of atoms during Si/Co interdiffusion has been investigated by means of thin tantalum marker layers imbedded in the deposited Co layer. The silicide phase CoSi is found to grow in the Si/CoSi/Co structure without any conversion of CoSi to Co2Si. Cobalt is found to be the dominant... (Read more)
- 379. Appl. Phys. Lett. 62, 273 (1993) , “Shallow Donor in Separation by Implantation of Oxygen Structures Revealed by Electric-Field Modulated Electron Spin Resonance”, K. Vanheusden and A. StesmansElectric-field modulated K-band electron spin resonance measurements on Si/SiO2/Si structures, formed by implantation of oxygen (SIMOX), were carried out at 4.330 K. Large area metal-oxide-silicon capacitors were fabricated on these structures and optimized for cavity... (Read more)
- 380. J. Appl. Phys. 73, 8519 (1993) , “Generation Mechanisms of Paramagnetic Centers by Gamma-Ray Irradiation at and near the Si/SiO2 Interface”, K. Awazu, K. Watanabe, H. Kawazoe.Pb (·SiSi3) and E (·SiO3) centers in the Si/SiO2 structure under gamma-ray radiation are studied with the electron-spin-resonance technique. The Si/SiO2 structures of (111), (110), and (100) planes... (Read more)
- 381. J. Appl. Phys. 73, 1797 (1993) , “Magnetic Resonance Spectroscopy in Silver-Doped Silicon”, N. T. Son, T. Gregorkiewicz, and C. A. J. AmmerlaanIn silver-doped silicon, several new electron paramagnetic resonance spectra were observed. Three of these, labeled Si-NL45, Si-NL46, and Si-NL47, were detected in n-type samples. The spectra have trigonal symmetry; the effective electron spin value S equals 1/2. The spectra Si-NL45... (Read more)
- 382. Jpn. J. Appl. Phys. 32, L1715 (1993) , “Carbon-Induced Rapid Annihilation of Thermal Double Donors in Czochralski Silicon Studied by Infrared Absorption Spectroscopy ”, Yoichi Kamiura*1, Yutaka Uno*2 and Fumio HashimotoCarbon-rich Czochralski Si shows anomalously rapid annihilation for all the species of thermal double donors at 470°C in two stages, which have good time correlations with the decrease of substitutional carbon density and also with the formation of two kinds of carbon-related new donors which... (Read more)
- 383. Microelectron. Eng. 22, 143 (1993) , “An improved theory of spin dependent recombination : application to the Pb center at the Si-SiO2 interface”, M. Lannoo, D. Vuillaume, D. Deresmes , D. StiévenardWe propose an improved theory of the spin dependent recombination at defects in p-n junctions. This theory accounts for the experimental observations on the Pb center at the Si-SiO2 interface. (Read more)
- 384. Phys. Rev. B 48, 2418-2435 (1993) , “Structural relaxation of Pb defects at the (111)Si/SiO2 interface as a function of oxidation temperature: The Pb-generation-stress relationship”, A. StesmansElectron-spin-resonance (ESR) studies of intrinsic Pb defects at the (111)Si/SiO2 interface have been carried out as a function of oxidation temperature Tox for the range 22<ToxTox and high-Tox... (Read more)
- 385. Phys. Rev. B 47, 7025 (1993) , “Electron-Paramagnetic-Resonance Investigation of the Iron-Indium Pair in Silicon”, W. Gehlhoff, P. Emanuelsson, P. Omling, and H. G. GrimmeissA defect consisting of a substitutional indium and an interstitial iron ion in silicon has been studied using the electron-paramagnetic-resonance (EPR) technique. The defect is found to appear in two different configurations, where the iron ion occupies two different interstitial positions near the... (Read more)
- 386. Phys. Rev. B 47, 6363-6380 (1993) , “Electron paramagnetic resonance of multistable interstitial-carbonsubstitutional-group-V-atom pairs in silicon”, X. D. Zhan, G. D. WatkinsA total of five new electron paramagnetic resonance (EPR) centers are observed in electron-irradiated P-, As-, and Sb-doped silicon. Three are identified as arising from the neutral charge state of the stable configuration and two of the four metastable configurations of an... (Read more)
- 387. Phys. Rev. B 47, 3620-3625 (1993) , “{H,B}, {H,C}, and {H,Si} pairs in silicon and germanium”, Dj. M. Maric, P. F. Meier, S. K. EstreicherThe interactions between interstitial H and substitutional B, C, and Si in crystalline silicon and germanium are studied in molecular clusters at the ab initio Hartree-Fock level with large basis sets. The energetics, electronic structures, and relative stabilities of these pairs are determined. Our... (Read more)
- 388. Phys. Rev. B 47, 10899-10902 (1993) , “Defects in porous p-type Si: An electron-paramagnetic-resonance study”, H. J. von Bardeleben, D. Stievenard, A. Grosman, C. Ortega, J. SiejkaThe defects in p+ porous silicon of low and high porosity have been studied by using electron-paramagnetic-resonance (EPR) spectroscopy and compared with an impurity analysis obtained from nuclear reaction analysis (NRA). The EPR measurements show, in both high- and low-porosity samples,... (Read more)
- 389. Phys. Rev. Lett. 71, 117 (1993) , “Electron Paramagnetic Resonance of Molecular Hydrogen in Silicon”, P. Stallinga, T. Gregorkiewicz, and C. A. J. AmmerlaanIn briefly annealed silicon samples implanted with hydrogen and deuterium an electron paramagnetic resonance spectrum is detected. It is identified as arising from a hydrogen molecule oriented in the ?111? crystallographic direction and located most probably at an interstitial site. Such a result is... (Read more)
- 390. Phys. Rev. Lett. 70, 3816 (1993) , “Structure-Sensitive Spectroscopy of Transition-Metal-Hydrogen Complexes in Silicon”, P. M. Williams, G. D. Watkins, S. Uftring, and Michael StavolaSeveral centers that involve Pt and H have been introduced into n-type Si and studied by electron paramagnetic resonance and vibrational spectroscopy to provide unique structure-sensitive data for an H-passivated deep level impurity. Through the observation of Pt-H and -D hyperfine interactions, a... (Read more)
- 391. Phys. Rev. Lett. 70, 1723 (1993) , “Relationship between Stress and Dangling Bond Generation at the (111)Si/SiO2 Interface”, A. Stesmans.Electron spin resonance analysis of the intrinsic density [Pb] of interfacial Pb (?Si?Si3) defects in thermal (111)Si/SiO2 as a function of oxidation temperature Tox in the range 200–1140°C reveals a close linear correlation with the average... (Read more)
- 392. Semicond. Sci. Technol. 8, 2037 (1993) , “Generation of thermal donors in silicon: oxygen aggregation controlled by self-interstitials”, V V VoronkovThe analysis of kinetic data on thermal donors (TDS) leads to a general model of oxygen aggregation: the aggregates which arise differ not only in size but also in the number of emitted self-interstitials, m. Each line of aggregates-of a particular m-may contain a TD family. The well known family of... (Read more)
- 393. Semicond. Sci. Technol. 8, 1385-1392 (1993) , “Electrically detected electron paramagnetic resonance of a deep recombination centre in a silicon diode”, B. Stich , S. Gruelich-Weber , J.-M. Spaeth , H. Overhof
- 394. Appl. Phys. Lett. 61, 2887-2889 (1992) , “Identification of an interface defect generated by hot electrons in SiO2”, J. H. Stathis and D. J. DiMariaHot electrons in the gate dielectric (SiO2) of field effect transistors create defects at the Si/SiO2 interface. Using electrically detected magnetic resonance, we have identified a major component of these interface defects as the well-known Pb0 center. We... (Read more)
- 395. Appl. Phys. Lett. 61, 2569 (1992) , “Spin-dependent effects in porous silicon”, M. S. Brandt and M. StutzmannLuminescent anodically etched porous silicon is studied with electron spin resonance, optically detected magnetic resonance, and spin-dependent photoconductivity. The Pb center, the silicon dangling bond at the crystalline Si/SiO2 interface, is found to be the... (Read more)
- 396. Appl. Phys. Lett. 60, 610 (1992) , “Electrically detected magnetic resonance of a transition metal related recombination center in Si p–n diodes”, F. C. Rong, G. J. Gerardi, W. R. Buchwald, E. H. Poindexter, M. T. Umlor, D. J. Keeble, W. L. WarrenA hyperfine structure has been observed by electrically detected magnetic resonance from a Si pn diode. From the hyperfine splitting, and the natural abundance of the interacting I=1/2 nuclear species, the recombination center is found to be consistent with a platinum... (Read more)
- 397. Appl. Phys. Lett. 60, 1857 (1992) , “Spin Dependent Recombination in Pt-Doped Silicon p-n Junctions”, P. Christmann, C. Wetzel, B. K. Meyer, A. Asenov, A. Endrös.Electrically detected magnetic resonance experiments showing spin dependent recombination in commercial p-n diodes are presented. The observed anisotropy in the g values along with the marked shift from the free electron g-value point to a metal-vacancy complex. Deep... (Read more)
- 398. J. Appl. Phys. 72, 520-524 (1992) , “Deep levels of vanadium and vanadium-hydrogen complex in silicon”, T. Sadoh, H. Nakashima, and T. TsurushimaDeep levels in vanadium-doped n- and p-type silicon have been investigated using deep level transient spectroscopy (DLTS) and concentration profile measurements. The DLTS measurement reveals two electron traps of EC−0.20 eV and... (Read more)
- 399. J. Appl. Phys. 72, 3095 (1992) , “Complexing in Silicon Induced by Surface Reactions: Electron Paramagnetic Resonance Detection of a 6-Platinum Cluster”, M. Höhne and U. JudaComplexing of 5dn impurities from supersaturated solutions in silicon occurs during thermal processing at intermediate temperatures subsequent to fast or retarded quenching. Doping of silicon with 5dn transition-metal ions in a wet... (Read more)
- 400. Mater. Sci. Forum 83-87, 1165-1170 (1992) , “Spin dependent recombination at deep centers in Si - electrically detected magnetic resonance”, P. Christmann , M. Bernauer , C. Wetzel , A. Asenov , B. K. Meyer , A. Endros
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