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- 101. Phys. Rev. B 74, 235317 (2006) , “Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at temperatures between 10 and 295 K”, Yukinori Ono, Jean-Francois Morizur, Katsuhiko Nishiguchi, Kei Takashina, Hiroshi Yamaguchi, Kazuma Hiratsuka, Seiji Horiguchi, Hiroshi Inokawa, and Yasuo TakahashiWe investigate transport in phosphorus-doped buried-channel metal-oxide-semiconductor field-effect transistors at temperatures between 10 and 295 K. We focus on transistors with phosphorus donor concentrations higher than those previously studied, where we expect conduction to rely on donor... (Read more)
- 102. Phys. Rev. B 74, 235301 (2006) , “Precursor mechanism for interaction of bulk interstitial atoms with Si(100)”, Xiao Zhang, Min Yu, Charlotte T. M. Kwok, Ramakrishnan Vaidyanathan, Richard D. Braatz, and Edmund G. SeebauerIn the same way that gases react with surfaces from above, solid-state point defects such as interstitial atoms can react from below. Little attention has been paid to this form of surface chemistry. Recent bulk self-diffusion measurements near the Si(100) surface have quantified Si interstitial... (Read more)
- 103. Phys. Rev. B 74, 235214 (2006) , “Raman scattering study of H2 in Si”, M. Hiller, E. V. Lavrov, and J. WeberIsolated interstitial H2 and H2 bound to interstitial oxygen (O–H2) in single-crystalline Si are studied by Raman scattering. Two Raman signals at 3199(1) and 3193(1) cm−1 (T0 K) are identified as ro-vibrational transitions of... (Read more)
- 104. Phys. Rev. B 74, 235209 (2006) , “Comparison of two methods for circumventing the Coulomb divergence in supercell calculations for charged point defects”, A. F. Wright and N. A. ModineDensity-functional-theory calculations were performed for the unrelaxed +2 Si vacancy and +2 self-interstitial utilizing periodic boundary conditions and two different methods—the uniform background charge method and the local moment counter charge method—for circumventing the divergence... (Read more)
- 105. Phys. Rev. B 74, 205324 (2006) , “Surface smoothness of plasma-deposited amorphous silicon thin films: Surface diffusion of radical precursors and mechanism of Si incorporation”, Mayur S. Valipa, Tamas Bakos, and Dimitrios MaroudasWe present a detailed analysis of the fundamental atomic-scale processes that determine the surface smoothness of hydrogenated amorphous silicon (a-Si:H) thin films. The analysis is based on a synergistic combination of molecular-dynamics (MD) simulations of radical precursor migration on surfaces... (Read more)
- 106. Phys. Rev. B 74, 205208 (2006) , “Formation energies, binding energies, structure, and electronic transitions of Si divacancies studied by density functional calculations”, R. R. Wixom and A. F. WrightAtomic configurations, formation energies, electronic transition energies, and binding energies of the silicon divacancy in the +1, 0, −1, and −2 charge states were obtained from density functional theory calculations. The calculations were performed using the local density approximation... (Read more)
- 107. Phys. Rev. B 74, 205202 (2006) , “Structural model of amorphous silicon annealed with tight binding”, N. Bernstein, J. L. Feldman,, and M. FornariWe present a model of amorphous silicon generated by extensive annealing of a continuous random network structure using a molecular dynamics simulation with forces computed by a tight-binding total energy method. We also produce a refined model by relaxing the annealed model using density functional... (Read more)
- 108. Phys. Rev. B 74, 195202 (2006) , “Interstitial-mediated mechanisms of As and P diffusion in Si: Gradient-corrected density-functional calculations”, Scott A. Harrison, Thomas F. Edgar, and Gyeong S. HwangGradient-corrected density-functional calculations are used to determine the structure, stability, and diffusion of arsenic-interstitial and phosphorus-interstitial pairs in the positive, neutral, and negative charge states. For both cases, our calculations show that the neutral pair will be... (Read more)
- 109. Phys. Rev. B 74, 184108 (2006) , “Interpreting Mössbauer spectra reflecting an infinite number of sites: An application to Fe1−xSi synthesized by pulsed laser annealing”, A. Falepin, S. Cottenier, C. M. Comrie, and A. VantommeWe present a study on the interpretation of conversion electron Mössbauer spectra reflecting an infinite number of sites, in casu Mössbauer spectroscopy on Fe1−xSi layers on Si, synthesized by pulsed laser annealing. These spectra display a broad... (Read more)
- 110. Phys. Rev. B 74, 174120 (2006) , “Single-crystal silicon coimplanted by helium and hydrogen: Evolution of decorated vacancylike defects with thermal treatments”, C. Macchi, S. Mariazzi, G. P. Karwasz, R. S. Brusa, P. Folegati, S. Frabboni, and G. OttavianiSi p-type (100) samples were coimplanted at room temperature with He+ ions at 30 keV with a dose of 1×1016 ions/cm2 and successively with H+ ions at 24 keV with a dose of 1×1016 ions/cm2. A series of samples was... (Read more)
- 111. Phys. Rev. B 74, 174115 (2006) , “Modeling of damage generation mechanisms in silicon at energies below the displacement threshold”, Iván Santos, Luis A. Marqués, and Lourdes PelazWe have used molecular dynamics simulation techniques to study the generation of damage in Si within the low-energy deposition regime. We have demonstrated that energy transfers below the displacement threshold can produce a significant amount of damage, usually neglected in traditional radiation... (Read more)
- 112. Phys. Rev. B 74, 165116 (2006) , “Density-functional-theory calculations for the silicon vacancy”, A. F. WrightThe atomic configurations and formation energies of a silicon vacancy in the +2, +1, 0, −1, and −2 charge states have been computed using density-functional theory with norm-conserving pseudopotentials and a plane wave basis. Calculations were performed in simple cubic supercells using... (Read more)
- 113. Phys. Rev. B 74, 153311 (2006) , “Electron transport in laterally confined phosphorus δ layers in silicon”, S. J. Robinson, J. S. Kline, H. J. Wheelwright, J. R. Tucker, C. L. Yang, R. R. Du, B. E. Volland, I. W. Rangelow, and T.-C. ShenTwo-dimensional electron systems fabricated from a single layer of P-donors have been lithographically confined to nanometer scale in lateral directions. The electronic transport of such quasi-one-dimensional systems with and without a perpendicular magnetic field was characterized at cryogenic... (Read more)
- 114. Phys. Rev. B 74, 121201 (2006) , “Prediction of the anomalous fluorine-silicon interstitial pair diffusion in crystalline silicon”, Scott A. Harrison, Thomas F. Edgar, and Gyeong S. HwangWe propose a diffusion pathway for a fluorine-silicon interstitial pair (F-Sii) in silicon based on extensive first-principles density functional calculations. We find the F-Sii pair to be most stable in the singly positive charge state under intrinsic conditions and can exist... (Read more)
- 115. Phys. Rev. B 74, 113301 (2006) , “Reactions of excess hydrogen at a Si(111) surface with H termination: First-principles calculations”, L. Tsetseris, S. T. PantelidesHydrogen reactions with silicon substrates is an established technique for the study and control of surface morphology. Here, we report the results of first-principles calculations on the trapping and depassivation reactions involving excess hydrogen (x-H) at a fully H-passivated Si(111) surface. We find that x-H atoms can depassivate Si-H bonds with a small barrier of 0.8 eV, or they can get trapped in very stable configurations that comprise of a dihydride and a vicinal Si-H bond. Desorption of H2 molecules from these complexes has an activation energy of 1.68 eV, which can account for pertinent experimental data. We discuss also the effect of strain on the possibility of altering the x-H surface profile. (Read more)
- 116. Phys. Rev. B 74, 085201 (2006) , “Hydrogen dynamics and light-induced structural changes in hydrogenated amorphous silicon”, T. A. Abtew and D. A. DraboldWe use accurate first-principles methods to study the network dynamics of hydrogenated amorphous silicon, including the motion of hydrogen. In addition to studies of atomic dynamics in the electronic ground state, we also adopt a simple procedure to track the H dynamics in light-excited states.... (Read more)
- 117. Phys. Rev. B 74, 045217 (2006) , “Vacancy clustering and diffusion in silicon: Kinetic lattice Monte Carlo simulations”, Benjamin P. Haley, Keith M. Beardmore, and Niels Grønbech-JensenDiffusion and clustering of lattice vacancies in silicon as a function of temperature, concentration, and interaction range are investigated by kinetic lattice Monte Carlo simulations. It is found that higher temperatures lead to larger clusters with shorter lifetimes on average, which grow by... (Read more)
- 118. Phys. Rev. B 74, 035205 (2006) , “Mechanisms of arsenic clustering in silicon”, F. F. Komarov, O. I. Velichko, V. A. Dobrushkin, and A. M. MironovA model of arsenic clustering in silicon is proposed and analyzed. The main feature of the proposed model is the assumption that negatively charged arsenic complexes play a dominant role in the clustering process. To confirm this assumption, electron density and concentration of impurity atoms... (Read more)
- 119. Phys. Rev. B 74, 035202 (2006) , “Computation of the Stark effect in P impurity states in silicon”, A. Debernardi, A. Baldereschi, and M. FanciulliWe compute within the effective-mass theory and without adjustable parameters the Stark effect for shallow P donors in Si with anisotropic band structure. Valley-orbit coupling is taken into account in a nonperturbative way and scattering effects of the impurity core are included to properly... (Read more)
- 120. Phys. Rev. B 74, 033309 (2006) , “Effect of the triplet state on the random telegraph signal in Si n-MOSFETs”, Enrico Prati, Marco Fanciulli, Giorgio Ferrari, and Marco SampietroWe report on the static magnetic field dependence of the random telegraph signal in a submicrometer silicon n-metal-oxide-semiconductor field-effect transistor. Using intense magnetic fields and low temperatures, we find that the characteristic time ratio changes by three orders of magnitude... (Read more)
- 121. Phys. Rev. B 74, 033304 (2006) , “5-7-5 line defects on As/Si(100): A general stress-relief mechanism for V/IV surfaces”, W. E. McMahon, Iskander G. Batyrev, T. Hannappel, J. M. Olson, and S. B. ZhangAn entire family of nano-scale trenches, ridges, and steps has been observed experimentally on AsH3-exposed Si(100). Some of these line structures have been observed previously, but their structures have remained a mystery. Theoretical modeling shows that they are all based upon the same... (Read more)
- 122. Phys. Rev. B 73, 245210 (2006) , “First-principles investigation of a bistable boron-oxygen interstitial pair in Si”, A. Carvalho, R. Jones, M. Sanati, S. K. Estreicher, J. Coutinho, and P. R. BriddonLocal density functional calculations are used to predict and compare the properties of the two distinct interstitial boron-interstitial oxygen (BiOi) complexes recently reported in the literature. The electronic and free energies, as well as the small... (Read more)
- 123. Phys. Rev. B 73, 245203 (2006) , “Diffusion mechanisms for silicon di-interstitials”, Yaojun A. Du, Richard G. Hennig, and John W. WilkinsTight-binding molecular dynamics and density-functional simulations on silicon seeded with a di-interstitial reveal its detailed diffusion mechanisms. The lowest-energy di-interstitial performs a translation/rotation diffusion-step with a barrier of 0.3 eV and a prefactor of 11 THz followed by a... (Read more)
- 124. Phys. Rev. B 73, 195209 (2006) , “Electrical activity of the PtH2 complex in silicon: High-resolution Laplace deep-level transient spectroscopy and uniaxial-stress technique”, Vl. Kolkovsky, O. Andersen, L. Dobaczewski, A. R. Peaker, and K. Bonde NielsenHigh-resolution Laplace deep-level spectroscopy combined with the uniaxial stress technique has been used to study stress-energy piezospectroscopic tensor components of the platinum-dihydrogen complex in silicon. The effect of stress on the defect has been observed either as the stress-induced... (Read more)
- 125. Phys. Rev. B 73, 115208 (2006) , “Evidence for a trigonal dimer of antibonding hydrogen in crystalline silicon”, R. N. Pereira and B. Bech NielsenThe infrared absorption spectra recorded on silicon crystals implanted with protons at cryogenic temperatures reveal three lines at 812, 1608, and 1791 cm1, which originate from the excitation of local vibrational modes of a H defect. Measurements carried out on crystals subjected... (Read more)
- 126. Phys. Rev. B 73, 115202 (2006) , “Annealing of electron-, proton-, and ion-produced vacancies in Si”, S. Dannefaer, V. Avalos, D. Kerr, R. Poirier, V. Shmarovoz, and S. H. ZhangPositron lifetime and Doppler measurements were performed on float-zone-refined and variously doped Czochralski-grown Si. The samples were irradiated by various particles (e, p, Kr) with energies between 2 MeV and 245 MeV. Electron or proton irradiation gave rise to... (Read more)
- 127. Phys. Rev. B 73, 113202 (2006) , “Demonstration of the effect of uniaxial stress on the electronic structure of bond-centered muonium in Si”, K. H. Chow, B. Hitti, and J. S. LordWe demonstrate that compressive uniaxial stress modifies the electronic structure of bond-centered muonium (MuBC0" align="middle">) in Si. The stress was applied along the 100 direction of the sample and results in a significant change in the hyperfine parameters of... (Read more)
- 128. Phys. Rev. B 73, 073302 (2006) , “Origin of Pb1 center at SiO2/Si(100) interface: First-principles calculations”, K. Kato, T. Yamasaki, T. UdaBased on first-principles calculations, we studied the generation behavior of Pb centers at SiO2/Si interfaces, especially for Pb1 centers, under oxidation of Si(100) surfaces. Pb1 centers were found to be formed... (Read more)
- 129. Phys. Rev. Lett. 97, 256602 (2006) , “Bistability-Mediated Carrier Recombination at Light-Induced Boron-Oxygen Complexes in Silicon”, Mao-Hua Du, Howard M. Branz, Richard S. Crandall, and S. B. ZhangA first-principles study of the BO2 complex in B-doped Czochralski Si reveals a defect-bistability-mediated carrier recombination mechanism, which contrasts with the standard fixed-level Shockley-Read-Hall model of recombination. An O2 dimer distant from B causes only weak... (Read more)
- 130. Phys. Rev. Lett. 97, 255902 (2006) , “Atomistic Mechanism of Boron Diffusion in Silicon”, Davide De Salvador, Enrico Napolitani, Salvatore Mirabella, Gabriele Bisognin, Giuliana Impellizzeri, Alberto Carnera, and Francesco PrioloB diffuses in crystalline Si by reacting with a Si self-interstitial (I) with a frequency g and so forming a fast migrating BI complex that can migrate for an average length λ. We experimentally demonstrate that both g and λ strongly depend on the free hole... (Read more)
- 131. Phys. Rev. Lett. 97, 227401 (2006) , “Optical Detection and Ionization of Donors in Specific Electronic and Nuclear Spin States”, A. Yang, M. Steger, D. Karaiskaj, M. L. W. Thewalt, M. Cardona, K. M. Itoh, H. Riemann, N. V. Abrosimov, M. F. Churbanov, A. V. Gusev, A. D. Bulanov, A. K. Kaliteevskii, O. N. Godisov, P. Becker, H.-J. Pohl, J. W. Ager III, and E. E. HallerWe resolve the remarkably sharp bound exciton transitions of highly enriched 28Si using a single-frequency laser and photoluminescence excitation spectroscopy, as well as photocurrent spectroscopy. Well-resolved doublets in the spectrum of the 31P donor reflect the hyperfine... (Read more)
- 132. Phys. Rev. Lett. 97, 176404 (2006) , “Stark Tuning of Donor Electron Spins in Silicon”, F. R. Bradbury, A. M. Tyryshkin, Guillaume Sabouret, Jeff Bokor, Thomas Schenkel, and S. A. LyonWe report Stark shift measurements for 121Sb donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on a Sb-implanted 28Si epilayer are used to apply the electric fields. Two quadratic Stark effects are resolved: a decrease of the... (Read more)
- 133. Phys. Rev. Lett. 97, 166402 (2006) , “Phosphorus Donors in Highly Strained Silicon”, Hans Huebl, Andre R. Stegner, Martin Stutzmann, Martin S. Brandt, Guenther Vogg, Frank Bensch, Eva Rauls, and Uwe GerstmannThe hyperfine interaction of phosphorus donors in fully strained Si thin films grown on virtual Si1-xGex substrates with x0.3 is determined via electrically detected magnetic resonance. For highly strained epilayers, hyperfine interactions as low as 0.8 mT... (Read more)
- 134. Phys. Rev. Lett. 97, 135901 (2006) , “Vacancy-Assisted Diffusion in Silicon: A Three-Temperature-Regime Model”, Damien Caliste and Pascal PochetIn this Letter we report kinetic lattice Monte Carlo simulations of vacancy-assisted diffusion in silicon. We show that the observed temperature dependence for vacancy migration energy is explained by the existence of three diffusion regimes for divacancies. This characteristic has been rationalized... (Read more)
- 135. Phys. Rev. Lett. 97, 116101 (2006) , “Oxygen Migration, Agglomeration, and Trapping: Key Factors for the Morphology of the Si-SiO2 Interface”, L. Tsetseris and S. T. PantelidesThe measured activation energies for oxide growth rates at the initial and late stages of oxidation of Si are 2 and 1.2 eV, respectively. These values imply that oxidation can proceed at temperatures much smaller than the 800 °C normally used to obtain devices with exceptionally smooth... (Read more)
- 136. Phys. Rev. Lett. 97, 106402 (2006) , “E Center in Silicon Has a Donor Level in the Band Gap”, A. Nylandsted Larsen, A. Mesli, K. Bonde Nielsen, H. Kortegaard Nielsen, L. Dobaczewski, J. Adey, R. Jones, D. W. Palmer, P. R. Briddon, and S. ÖbergIt has been an accepted fact for more than 40 years that the E center in Si (the group-V impurityvacancy pair)one of the most studied defects in semiconductorshas only one energy level in the band gap: namely, the acceptor level at about 0.45 eV below the conduction... (Read more)
- 137. Phys. Rev. Lett. 97, 066602 (2006) , “Electrically Detected Electron Spin Resonance in a High-Mobility Silicon Quantum Well”, Junya Matsunami, Mitsuaki Ooya, and Tohru OkamotoThe resistivity change due to electron spin resonance (ESR) absorption is investigated in a high-mobility two-dimensional electron system formed in a Si/SiGe heterostructure. Results for a specific Landau level configuration demonstrate that the primary cause of the ESR signal is a reduction of the... (Read more)
- 138. Phys. Rev. Lett. 97, 016102 (2006) , “Scaling and Universality of Roughening in Thermal Oxidation of Si(001)”, Hiroo Omi, Hiroyuki Kageshima, and Masashi UematsuBy analyzing atomic force microscopy images, we derive a continuum equation that quantitatively explains the roughening at the Si(001)-SiO2 interface during thermal oxidation at the temperature at 1200 °C in an Ar atmosphere containing a small fraction of O2. We also show... (Read more)
- 139. Appl. Phys. Lett. 87, 262108 (2005) , “Fast-forming boron-oxygen-related recombination center in crystalline silicon”, Karsten Bothe and Jan SchmidtThe mechanism of a fast carrier lifetime degradation effect proceeding within seconds in boron-doped Czochralski silicon is investigated. The decrease in the carrier lifetime is attributed to the formation of a deep boron-oxygen-related recombination center with a strongly asymmetric... (Read more)
- 140. Appl. Phys. Lett. 87, 231905 (2005) , “Structure, stability, and diffusion of arsenic-silicon interstitial pairs”, Scott A. Harrison, Thomas F. Edgar, and Gyeong S. HwangRecent experimental studies [A. Ural, P. B. Griffin, and J. D. Plummer, J. Appl. Phys. 85, 6440 (1999); R. Kim, T. Hirose, T. Shano, H. Tsuji, and K. Taniguchi, Jpn. J. Appl. Phys. 41, 227 (2002); S. Solmi, M. Ferri, M. Bersani, D. Giubertoni, and V. Soncini, J. Appl. Phys. 94,... (Read more)
- 141. Appl. Phys. Lett. 87, 204106 (2005) , “Direct observation of the structure of defect centers involved in the negative bias temperature instability”, J. P. Campbell and P. M. LenahanWe utilize a very sensitive electron paramagnetic resonance technique called spin-dependent recombination to observe and identify defect centers generated by modest negative bias and moderately elevated temperatures in fully processed p-channel metal-oxide-silicon field-effect transistors.... (Read more)
- 142. Appl. Phys. Lett. 86, 101905 (2005) , “Mechanisms of B deactivation contol by F co-implantation”, N.E.B.Cowern and B.Colombeau and J.Benson and A.J.smith and W.Lerch and S.Paul and T.Graf and F.Cristiano and X.Hebras and D.BolzeThermal annealing after preamorphization and solid-phase epitaxy of ultrashallow B implants leads to deactivation and diffusion driven by interstitials released from end-of-range defects. F inhibits these processes by forming small clusters that trap interstitials. A competing BF interaction... (Read more)
- 143. J. Appl. Phys. 98, 053707 (2005) , “An asymmetry of conduction mechanisms and charge trapping in thin high-k HfxTiySizO films”, A. Paskaleva, A. J. Bauer, M. LembergerThe electrical behavior of high-permittivity (high-k) hafnium titanium silicate (HfxTiySizO) layers with different Hf:Ti ratios in the films is investigated. The films were deposited by metal-organic chemical-vapor deposition using a... (Read more)
- 144. Mater. Sci. Eng. B 124-125, 192 (2005) , “Effect of fluorine on boron thermal diffusion in the presence of point defects”, M.N.Kham and H.A.W.El Mubared and J.M.Bonar and P.AshuburnWith the increased interest in the use of fluorine co-implantation with boron for boron diffusion suppression in MOSFET devices, it is important to understand the mechanisms by which fluorine reduces boron diffusion. Mechanisms, such as B–F chemical reaction, vacancy–fluorine clusters and fluorine–interstitials interactions have been proposed in the literature. In this paper, a point defect injection is done to investigate the mechanism responsible for boron TED and thermal diffusion suppression in F+ and B+ implanted silicon. A 5 keV, 7 × 1012 cm-2 B+ implant into silicon is used which is typical for halo implants in n-MOS. Three F+ energies, 5, 50 and 185 keV, are used. It is followed by rapid thermal annealing at 900–1000 °C for different times in N2 for an inert anneal and O2 for injection of interstitial point defects from the surface. Fluorine profiles for samples implanted with 185 keV F+ and annealed in N2 show two fluorine peaks at ~Rpand~Rp/2. Under interstitial injection, the Rp/2 peak decreases in size and for long anneal times is completely eliminated, supporting an earlier claim that the Rp/2 peak is due to vacancy–fluorine clusters. The amount of suppression of both boron TED and thermal diffusion at 900 and 1000 °C anneal is correlated to the amount of fluorine remaining after anneal. (Read more)
- 145. Microelectron. Reliability 45, 71 (2005) , “A comprehensive model of PMOS NBTI degradation ”,Negative bias temperature instability has become an important reliability concern for ultra-scaled Silicon IC technology with significant implications for both analog and digital circuit design. In this paper, we construct a comprehensive model for NBTI phenomena within the framework of the standard reaction–diffusion model. We demonstrate how to solve the reaction–diffusion equations in a way that emphasizes the physical aspects of the degradation process and allows easy generalization of the existing work. We also augment this basic reaction–diffusion model by including the temperature and field-dependence of the NBTI phenomena so that reliability projections can be made under arbitrary circuit operating conditions. (Read more)
- 146. Microelectron. Reliability 45, 57 (2005) , “Characterization of interface defects related to negative-bias temperature instability SiON/Si<100> systems ”,Interface defects related to negative-bias temperature instability (NBTI) in an ultrathin plasma-nitrided SiON/ Si<100> system were characterized by using conductance–frequency measurements, electron-spin resonance measure- ments, and synchrotron radiation X-ray photoelectron spectroscopy. It was confirmed that NBTI is reduced by using D2-annealing instead of the usual H2-annealing. Interfacial Si dangling bonds (Pb1 and Pb0 centers) were detected in a sample subjected to negative-bias temperature stress (NBTS). Although we suggest that NBTS also generates non-Pb defects, it does not seem to generate nitrogen dangling bonds. These results show that NBTI of the plasma-nitrided SiON/Si system is predominantly due to Pb depassivation. Plasma nitridation was also found to increase the Pb1/Pb0 density ratio, modify the Pb1 defect structure, and increase the latent interface trap density by generating Si suboxides at the interface. These changes are likely to be the causes of NBTI in ultrathin plasma-nitrided SiON/Si systems. (Read more)
- 147. Nucl. Instrum. Methods Phys. Res. B 230, 220 (2005) , “Interaction between implanted fluorine atoms and point defects in preamorphized silicon”, G.Impellizzeri and J.H.R.dos Santos and S.Mirabella and E.Napolitani and A.Carnera and F.Priolo
- 148. Phys. Rev. B 72, 045219 (2005) , “Fluorine in Si: Native-defect complexes and the supression of impurity diffusion”, Giorgia M. Lopez, Vincenzo Fiorentini, Giuliana Impellizzeri, Salvatore Mirabella, Enrico NapolitaniThe transient enhanced diffusion of acceptor impurities severely affects the realization of ultrahigh doping regions in miniaturized Si-based devices. Fluorine codoping has been found to suppress this transient diffusion, but the mechanism underlying this effect is not understood. It has been proposed that fluorine-impurity or fluorine–native-defect interactions may be responsible. Here we clarify this mechanism combining first-principles theoretical studies of fluorine in Si and purposely designed experiments on Si structures containing boron and fluorine. The central interaction mechanism is the preferential binding of fluorine to Si-vacancy dangling bonds and the consequent formation of vacancy-fluorine complexes. The latter effectively act as traps for the excess self-interstitials that would normally cause boron transient enhanced diffusion. Instead, fluorine-boron interactions are marginal and do not play any significant role. Our results are also consistent with other observations such as native-defect trapping and bubble formation. (Read more)
- 149. Phys. Rev. B 71, 245203 (2005) , “Electrical Activity of Er and Er-O Centers in Silicon”, D. Prezzi, T. A. G. Eberlein, R. Jones, J. S. Filhol, J. Coutindo, M. J. Shaw, P. R. Briddon.Spin-polarized density functional calculations are carried out on Er and Er-oxygen defects in crystalline Si. We find that the interstitial site is favored but the diffusion barrier of Eri is only 1.9 eV, and inevitably Eri forms complexes with impurities and... (Read more)
- 150. Phys. Rev. B 71, 115204 (2005) , “Electron Spin Resonance Study of Paramagnetic Centers in Neutron-Irradiated Heat-Treated Silicon”, D. Pierreux and A. StesmansElectron spin resonance (ESR) was used to study neutron-induced defects in silicon as functions of anneal temperature Tan. For Tan below 200 °C, the ESR response is dominated by the Si-P3 and Si-P6 spectra, as observed before. At Tan=200 ... (Read more)
- 151. Appl. Phys. Lett. 85, 1538 (2004) , “Observation of fluorine-vacancy complexes in silicon”, P. J. Simpson, Z. Jenei, P. Asoka-Kumar, R. R. Robison, M. E. LawWe show direct evidence, obtained by positron annihilation spectroscopy, for the complexing of fluorine with vacancies in silicon. Both float zone and Czochralski silicon wafers were implanted with 30 keV fluorine ions to a fluence of 2×1014 ions/cm2, and studied in the... (Read more)
- 152. Eur. Phys. J. Appl. Phys. 27, 13-19 (2004) , “Measurement of process-induced defects in Si sub-micron devices by combination of EDMR and TEM”, T. Umeda, A. Toda, Y. MochizukiProcess-induced defects are a serious issue for modern sub-micron Si LSIs. To characterize such defects, two different techniques are useful: electrically detected magnetic resonance (EDMR) and transmission electron microscope (TEM), which can detect small (point) and extended defects, respectively. We applied EDMR and TEM to the issue of defect-induced leakage currents in dynamic-random-access memory (DRAM) cells. For our DRAM samples (a 0.25- μm-rule series), although TEM showed no extended defects, EDMR successfully detected two types of point defects: V2+O x (Si divacancy-oxygen complexes) and larger Si vacancies (at least larger than V6). We confirmed that these defects are the source of DRAM leakage currents. The observed defects were formed by ion implantation processes, but were more thermally stable than those in bulk Si crystals. The origins of this enhanced stability are attributed to the presence of oxygen atoms and a strong mechanical strain in LSIs. To clarify the origin of the complicated strain in LSI structures, we can directly measure the local-strain distribution in DRAM samples by means of convergent-beam electron diffraction (CBED) using TEM, which provides us with a valuable hint for understanding the formation mechanism of process-induced defects. (Read more)
- 153. IEEE Electron Device Lett. 25, 153 (2004) , “Evaluation of NBTI in HfO2 Gate-Dielectric Stacks With Tungsten Gates”,
- 154. J. Appl. Phys. 96, 3721 (2004) , “Fluorine-enhanced boron deffusion induced by fluorine postimplantation in silicon”, Taiji NodaIn this article, the postimplanted fluorine effect on boron transient-enhanced diffusion (TED) and dose loss during a 750°C annealing is shown. 19F implants at 2 keV, after 11B implant at an energy of 1 keV,3×1014/cm2, have been investigated in... (Read more)
- 155. J. Appl. Phys. 95, 4096 (2004) , “Nitridation effects on Pb center structures at SiO2/Si„(100) interfaces ”,Interfacial defect structures of NO-nitride oxide on Si(100) were characterized by electron spin resonance spectroscopy. We confirmed that the effective g values of the Pb1 center are affected by interfacial nitridation even at a small nitrogen concentration of 5 at. %, while those of the Pb0 center proved to be unchanged. We observed that the shifted Pb1 line appeared gradually with interfacial nitrogen concentration, which suggests that the nitrogen-induced modified structure substitutes for the original Pb1 structure. Angular variations of the shifted Pb1 lines were also significantly different from those of pure oxide. Based on our analysis, we attributed the g value shift of the Pb1 center to dangling bond tilting, caused by the displacement of nearest-neighbor Si atoms. (Read more)
- 156. Phys. Rev. Lett. 93, 255502 (2004) , “Formation of Thermal Vacancies in Highly As and P Doped Si”, V. Ranki and K. SaarinenUsing positron annihilation measurements we observed the formation of thermal vacancies in highly As and P doped Si. The vacancies start to form at temperatures as low as 650 K and are mainly undecorated at high temperatures. Upon cooling the vacancies form stable vacancy-impurity complexes such as... (Read more)
- 157. Phys. Rev. Lett. 93, 245901 (2004) , “Ab Initio Calculations to Model Anomalous Fluorine Behavior”, Milan Diebel, Scott T. Dunhammplanted fluorine is observed to behave unusually in silicon, manifesting apparent uphill diffusion and reducing diffusion and enhancing activation of boron. In order to investigate fluorine behavior, we calculate the energy of fluorine defect structures in the framework of density functional theory. In addition to identifying the ground-state configuration and diffusion migration barrier of a single fluorine atom in silicon, a set of energetically favorable fluorine defect structures were found (FnVm). The decoration of vacancies and dangling silicon bonds by fluorine suggests that fluorine accumulates in vacancy-rich regions, which explains the fluorine redistribution behavior reported experimentally. (Read more)
- 158. Phys. Rev. Lett. 93, 086102 (2004) , “Reaction of the Oxygen Molecule at the Si(100)–SiO2 Interface During Silicon Oxidation”, Angelo Bongiorno and Alfredo PasquarelloUsing constrained ab initio molecular dynamics, we investigate the reaction of the O2 molecule at the Si(100)SiO2 interface during Si oxidation. The reaction proceeds sequentially through the incorporation of the O2 molecule in a Si-Si bond and the... (Read more)
- 159. Phys. Rev. Lett. 92, 105505 (2004) , “In situ ESR Observation of Interface Dangling Bond Formation Processes During Ultrathin SiO2 Growth on Si(111)”, W. Futako, N. Mizuochi, and S. YamasakiWe report the formation processes of interface dangling bonds (Pb centers) during initial oxidation of a clean Si(111) surface using an ultrahigh-vacuum electron-spin-resonance technique. At the oxidation of one or two Si layer(s), the Pb center... (Read more)
- 160. Phys. Rev. Lett. 92, 087601 (2004) , “Hydrogen-Release Mechanisms in the Breakdown of Thin SiO2 Films”, J. Suñé and E. Y. WuThe mechanism of hydrogen release from the anode Si/SiO2 interface that triggers defect generation and finally the dielectric breakdown of the oxide in metal-oxide-semiconductor structures is investigated. Extensive experimental charge-to-breakdown statistics are used to derive the defect... (Read more)
- 161. Solid State Commun. 132, 545 (2004) , Pergamon Press , “Pressure-induced phase transitions in Si observed by thermoelectric power measurements”, S.V. Ovsyannikov, V.V. Shchennikov, A. Misiuk, V.V. Shchennikov JrFor the first time the phase transitions under high pressure P up to 20 GPa have been observed in Czochralski-grown Si single crystals by thermoelectric power S measurements. Values of S≈+8±3 μV/K have been determined for tetragonal, orthorhombic and simple hexagonal high-pressure phases. The behaviour of S(P) was found to be rather different for different Si samples—initial and pre-treated by high temperatures 450–650ºC under hydrostatic pressure 0–1.5 GPa. (Read more)
- 162. Appl. Phys. Lett. 83, 3407-3409 (2003) , “Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si”, A. Y. Kang, P. M. Lenahan, J. F. Conley Jr.We observed two paramagnetic defects in thin films of HfO2 on silicon with electron spin resonance. Both appear after photoinjecting electrons into the dielectric. Strong spectroscopic evidence links one spectrum to an O2-" align="middle"> defect. A second spectrum is... (Read more)
- 163. Appl. Phys. Lett. 83, 1647 (2003) , “Dynamic recovery of negative bias temperature instability in p-type metal–oxide–semiconductor field-effect transistors”,An unexpected physical phenomenondynamic recovery of negative bias temperature instability (NBTI)is reported. NBTI degradation in p-type metaloxidesemiconductor field-effect transistors is significantly (by ~40%) reduced after stress interruption. NBTI recovery... (Read more)
- 164. Appl. Phys. Lett. 82, 3677-3679 (2003) , “Interface defects responsible for negative-bias temperature instability in plasma-nitrided SiON/Si(100) systems”, Shinji Fujieda, Yoshinao Miura, and Motofumi SaitohInterface defects generated by negative-bias temperature stress (NBTS) in an ultrathin plasma- nitrided SiON/Si(100) system were characterized by using D2 annealing, conductance-frequency measurements, and electron-spin resonance measurements. D2 annealing was shown to lower... (Read more)
- 165. Appl. Phys. Lett. 82, 269 (2003) , “Relationship between interfacial nitrogen concentration and activation energies of fixed-charge trapping and interface state generation under bias-temperature stress condition”,The influence of nitrogen concentration at a nitrided oxide/silicon interface on the activation energies of both near-interface fixed-charge trapping and interface state generation caused by negative bias temperature instability stress has been studied quantitatively. It is observed that the charge... (Read more)
- 166. J. Appl. Phys. 94, 7105-7111 (2003) , “Electrically detected magnetic resonance of ion-implantation damage centers in silicon large-scale integrated circuits”, T. Umeda, Y. Mochizuki, K. Okonogi, K. HamadaWe used electrically detected magnetic resonance to study the microscopic structure of ion-implantation-induced point defects that remained in large-scale Si integrated circuits (Si LSIs). Two types of defects were detected in the source/drain (n+-type) region of... (Read more)
- 167. J. Appl. Phys. 94, 1 (2003) , “Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing”,We present an overview of negative bias temperature instability (NBTI) commonly observed in p-channel metaloxidesemiconductor field-effect transistors when stressed with negative gate voltages at elevated temperatures. We discuss the results of such stress on device and circuit... (Read more)
- 168. Phys. Rev. B 68, 245105 (2003) , “Theory of time-domain measurement of spin-dependent recombination with pulsed electrically detected magnetic resonance”, Christoph Boehme and Klaus LipsThe theoretical foundations of the time domain measurement of spin-dependent charge carrier recombination by means of pulsed electrically detected magnetic resonance (EDMR) are outlined. Pulsed EDMR is based on the transient measurement of electrical currents in semiconductors after a coherent... (Read more)
- 169. Phys. Rev. B 67, 195338 (2003) , “Layer-resolved kinetics of Si oxidation investigated using the reflectance difference oscillation method”, T. Yasuda, N. Kumagai, M. Nishizawa, S. Yamasaki, H. Oheda, and K. YamabeDry oxidation kinetics of the Si(001) surface has been investigated using reflectance difference oscillation to resolve atomic-scale phenomena. The activation energy for oxidation has been found to increase as the oxide-Si interface moves in the depth direction, reaching the value for bulk... (Read more)
- 170. Phys. Rev. Lett. 91, 246603 (2003) , “Electrical Detection of Spin Coherence in Silicon”, Christoph Boehme and Klaus LipsExperimental evidence is presented showing that photocurrents in silicon can be used as highly sensitive readout probes for coherent spin states of localized electrons, the prime candidates for quantum bits in various semiconductor based quantum computer concepts. Conduction electrons are subjected... (Read more)
- 171. Phys. Rev. Lett. 90, 155901 (2003) , “Fluorine in Silicon: Diffusion, Trapping, and Precipitation”, X. D. Pi, C. P. Burrows, P. G. ColemanThe effect of vacancies on the behavior of F in crystalline Si has been elucidated experimentally for the first time. With positron annihilation spectroscopy and secondary ion mass spectroscopy, we find that F retards recombination between vacancies (V) and interstitials (I) because V and I trap F to form complexes. F diffuses in the V-rich region via a vacancy mechanism with an activation energy of 2.12±0.08 eV. After a long annealing time at 700ºC, F precipitates have been observed by cross-section transmission electron microscopy which are developed from the V-type defects around the implantation range and the I-type defects at the end of range. (Read more)
- 172. Appl. Phys. Lett. 81, 3488 (2002) , “On–off switching of edge direct tunneling currents in metal-oxide-semiconductor field-effect transistors”, Ming-Jer Chen and Ming-Pei LuOnoff switching behaviors or two-level random telegraph signals (RTS) are measured in the low voltage (1.40 V<VG<0.88 V) edge direct tunneling currents in ultrathin gate stack (10 Å oxide + 10 Å nitride) n-channel... (Read more)
- 173. Appl. Phys. Lett. 81, 2397-2399 (2002) , “Hydrogen redistribution induced by negative-bias-temperature stress in metal–oxide–silicon diodes”, Ziyuan LiuPoly-Si/SiO2/Si diodes in which oxides were grown thermally under wet oxidation conditions and subsequently treated by a post-oxidation anneal (POA) have been characterized electrically and chemically before and after applying negative-bias-temperature stress (NBTS). It was confirmed that... (Read more)
- 174. Appl. Phys. Lett. 81, 1839 (2002) , “Dual behavior of H+ at Si–SiO2 interfaces: Mobility versus trapping”, S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, S. T. PantelidesWe report first-principles calculations showing that protons in the vicinity of a SiSiO2 interface can behave in two different ways. At an abrupt interface without suboxide bonds (SiSi bonds at the oxide side of the interface) H+ does not become trapped but migrates... (Read more)
- 175. Appl. Phys. Lett. 81, 1818 (2002) , “Interface structures generated by negative-bias temperature instability in Si/SiO2 and Si/SiOxNy interfaces”, J. Ushio, T. Maruizumi, K. Kushida-AbdelghafarWe used a density functional method to investigate the mechanism of negative-bias temperature instability (NBTI) and resultant structural changes of Si/SiO2 and Si/SiOxNy interfaces. The reaction energies for the water- and hydrogen-originated... (Read more)
- 176. Appl. Phys. Lett. 81, 1128-1130 (2002) , “Electron spin resonance study of interface defects in atomic layer deposited hafnium oxide on Si”, A. Y. Kang, P. M. Lenahan, J. F. Conley Jr., R. SolankiWe report electron spin resonance (ESR) observation of interface defects at the HfO2/(111)Si boundary for HfO2 films deposited via atomic layer chemical vapor deposition using Hf(NO3)4 as a precursor. We observe several signals, dominated by one due to a... (Read more)
- 177. Appl. Phys. Lett. 80, 4753-4755 (2002) , “Characterization of S centers generated by thermal degradation in SiO2 on (100)Si”, A. Stesmans, B. Nouwen, D. Pierreux, and V. V. Afanas'evThe structural degradation of thermal SiO2 on (100)Si under isochronal vacuum annealing in the range Tan = 950 °C1250 °C was monitored by electron spin resonance (ESR) in terms of point defect creation, including... (Read more)
- 178. Appl. Phys. Lett. 80, 2278 (2002) , “Determining the relationship between local lattice strain and slip systems of dislocations around shallow trench isolation by convergent-beam electron diffraction ”, Akio Toda, Nobuyuki Ikarashi, Haruhiko Ono, Kensuke OkonogiWe clarified the generation of process-induced dislocations around a shallow trench isolation (STI) by using convergent-beam electron diffraction. Comparing the resolved shear strain (RSS) of 12 slip systems, we found that at the trench bottom corner the RSS on slip systems (1 1 1)[0 1 1] and... (Read more)
- 179. Appl. Phys. Lett. 80, 1945-1947 (2002) , “Density of states of Pb1 Si/SiO2 interface trap centers”, J. P. Campbell and P. M. LenahanThe electronic properties of the (100) Si/SiO2 interfacial defect called Pb1 are quite controversial. We present electron spin resonance measurements that demonstrate: (1) that the Pb1 defects have levels in the silicon band gap, (2) that... (Read more)
- 180. Appl. Phys. Lett. 80, 1261-1263 (2002) , “Hole trapping in ultrathin Al2O3 and ZrO2 insulators on silicon”, V. V. Afanas'ev and A. StesmansOptical injection of electron-hole pairs in 35 nm thick layers of SiO2, Al2O3, ZrO2 and their stacks on (100)Si is found to result in positive oxide charging, suggesting trapping of holes. In thin layers of the high-permittivity metal oxides... (Read more)
- 181. J. Appl. Phys. 91, 8919-8941 (2002) , “Transient Enhanced Diffusion of Boron in Si”, S. C. Jain, W. Schoenmaker, R. Lindsay, P. A. Stolk, S. Decoutere, M. Willander, H. E. Maes.On annealing a boron implanted Si sample at ~800 °C, boron in the tail of the implanted profile diffuses very fast, faster than the normal thermal diffusion by a factor 100 or more. After annealing for a sufficiently long time, the enhanced diffusion saturates. The enhanced diffusion is... (Read more)
- 182. Phys. Rev. Lett. 88, 205502 (2002) , “Metastability of Amorphous Silicon from Silicon Network Rebonding”, R. Biswas, B. C. Pan, and Y. Y. YeWe propose a network rebonding model for light-induced metastability in amorphous silicon, involving bonding rearrangements of silicon and hydrogen atoms. Nonradiative recombination breaks weak silicon bonds and generates dangling bond–floating bond pairs, with very low activation energies. The... (Read more)
- 183. Appl. Phys. Lett. 79, 4243 (2001) , “Local lattice strain distribution around a transistor channel in metal–oxide–semiconductor devices”, Akio Toda, Nobuyuki Ikarashi, Haruhiko Ono, Shinya Ito, Takeshi Toda, Kiyotaka ImaiThe local lattice strain around the channel in metaloxidesemiconductor (MOS) field-effect transistors of 0.1 µm gate length was measured by using convergent-beam electron diffraction. It was found that the normal strain along the gate-length direction is compressive beneath the... (Read more)
- 184. Appl. Phys. Lett. 78, 3633 (2001) , “Detection of two dangling bond centers with trigonal symmetry at and below a (100) Si/SiO2 interface”, B.Langhanki , S.Greulich-Weber , J-M.Spaeth , J.MichelUsing electrical detection of electron paramagnetic resonance (EDEPR), two defect centers located at the Si (100)/SiO2 interface and in regions several µm below the silicon surface have been observed at a low temperature. Improvements in the EDEPR measurement technique enabled the... (Read more)
- 185. Appl. Phys. Lett. 78, 1571 (2001) , “Hydrogen Passivation and Activation of Oxygen Complexes in Silicon”, S. N. Rashkeev, M. Di Ventra, and S. T. PantelidesWe report first-principles calculations in terms of which we describe the role of hydrogen in passivating or activating oxygen complexes in Si. In particular we find that attaching H to a pre-existing oxygen cluster can change the electric activity of the cluster. Furthermore, the addition of a... (Read more)
- 186. Appl. Phys. Lett. 78, 1453-1454 (2001) , “Response to "Comment on `Do Pb1 centers have levels in the Si band gap? Spin-dependent recombination study of the Pb1 "hyperfine spectrum" ' " [Appl. Phys. Lett. 78, 1451 (2001)]”, Tetsuya D. Mishima and Patrick M. LenahanWe recently published a letter in which we utilized spin-dependent recombination (SDR) measurements to demonstrate that Pb1 centers, silicon dangling-bond defects at the (001) Si/SiO2 interface, have electronic levels in the silicon band gap.1 In their comment on our... (Read more)
- 187. J. Appl. Phys. 90, 6026-6031 (2001) , “Oxygen-Related Defects in Low-Dose Separation-by-Implanted Oxygen Wafers Probed by Monoenergetic Positron Beams”, A. Uedono, Z. Q. Chen, A. Ogura, H. Ono, R. Suzuki, T. Ohdaira, T. Mikado.The depth distributions of oxygen-related defects in separation-by-implanted oxygen wafers were determined from measurements of Doppler broadening spectra of the annihilation radiation. Vacanyoxygen complexes were introduced by implanting 180-keV oxygen at (26)×1017 ... (Read more)
- 188. J. Appl. Phys. 89, 5997-6001 (2001) , “Oxygen Recoil Implant from SiO2 Layers into Single-Crystalline Silicon”, G. Wang, Y. Chen, D. Li, S. Oak, G. Srivastav, S. Banerjee, A. Tasch, P. Merrill, R. Bleiler.It is important to understand the distribution of recoil-implanted atoms and the impact on device performance when ion implantation is performed at a high dose through surface materials into single crystalline silicon. For example, in ultralarge scale integration impurity ions are often implanted... (Read more)
- 189. J. Phys.: Condens. Matter 13, L1-L7 (2001) , “Identification of the Tetra-Interstitial in Silicon”, B. J. Coomer, J. P. Goss, R. Jones, S. Öberg, P. R. Briddon.First-principles computational methods are employed to investigate the structural, vibrational, optical and electronic properties of the self-interstitial aggregate, I4 in silicon. We find the defect to be electrically active and identify it with the B3 EPR centre. We... (Read more)
- 190. Jpn. J. Appl. Phys. 40, L1075 (2001) , “Formation of Buried Oxide Layer in Si Substrates by Oxygen Precipitation at Implantation Damage of Light Ions”, A. Ogura.We have developed a novel Si-on-insulator fabrication technique in which light ions, such as H+ and He+, are implanted into a Si substrate instead of O+ implantation in the SIMOX (separation by implanted oxygen) process. The atmospheric oxygen atoms... (Read more)
- 191. Jpn. J. Appl. Phys. 40, 2840 (2001) , “Spin-Dependent Trap-Assisted Tunneling Current in Ultra-Thin Gate Dielectrics”,We have characterized the leakage current paths of ultra-thin gate dielectrics using spin-dependent tunneling (SDT) spectroscopy. A spin-dependent current was detected in metal-oxide-semiconductor diodes with chemical-vapor-deposition SiN gate films with thickness less than 3 nm. We examined the nature of the trap sites in terms of g-value, bias-dependent signal intensity, and magnetic-field orientation dependence. The main feature of the observed spectrum is attributed to a paramagnetic Si site in the SiN films. By using a quantitative model of electron spin-polarization, we were able to estimate the ratio of trap-assisted current to the total leakage current. (Read more)
- 192. Phys. Rev. B 64, 115308 (2001) , “Experimental Investigation of Band Structure Modification in Silicon Nanocrystals”, B. J. Pawlak, T. Gregorkiewicz, C. A. J. Ammerlaan, W. Takkenberg, F. D. Tichelaar, P. F. A. Alkemade.Experimental studies of size-related effects in silicon nanocrystals are reported. We present investigations carried out on nanocrystals prepared from single-crystal Si:P wafer by ball milling. The average final grain dimension varied depending on the way of preparation in the range between 70 and... (Read more)
- 193. Phys. Rev. B 63, 233202 (2001) , “Tetrahedral Mni4 Cluster in Silicon”, J. Wedekind, H. Vollmer, R. Labusch.Mni40 clusters were investigated by electron paramagnetic resonance in silicon specimens with initial doping concentrations between 1.5×1015?P cm-3 and 5×1016?B cm-3. In n-type samples and in intrinsic samples, we obtained the EPR... (Read more)
- 194. Phys. Rev. Lett. 87, 235501 (2001) , “Thermal Double Donors and Quantum Dots”, J. Coutinho, R. Jones, L. I. Murin, V. P. Markevich, J. L. Lindström, S. Öberg, P. R. Briddon.Combined local mode spectroscopy and ab initio modeling are used to demonstrate for the first time that oxygen atoms in thermal double donors (TDD) in Si are in close proximity. The observed vibrational modes in 16O, 18O, and mixed isotopic samples are consistent with a model... (Read more)
- 195. Phys. Rev. Lett. 87, 165506 (2001) , “Defect Generation by Hydrogen at the Si-SiO2 Interfaces”, S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, and S. T. PantelidesHydrogen is known to passivate Si dangling bonds at the Si-SiO 2 interface, but the subsequent arrival of H + at the interface causes depassivation of Si-H bonds. Here we report first-principles density functional calculations, showing that, contrary to conventional... (Read more)
- 196. Phys. Rev. Lett. 86, 272 (2001) , ““Metallic” and “Insulating” Behavior of the Two-Dimensional Electron Gas on a Vicinal Surface of Si MOSFET's”, S. S. Safonov, S. H. Roshko, A. K. Savchenko, A. G. Pogosov, and Z. D. KvonThe resistance R of the 2DEG on the vicinal Si surface shows unusual behavior which is very different from that in Si (100) MOSFET's studied earlier. The low-temperature crossover from dR/dT<0 (“insulator”) to dR/dT>0 (“metal”) occurs at a low resistance of... (Read more)
- 197. Phys. Rev. Lett. 86, 1054 (2001) , “Electron Spin Resonance Observation of the Si(111)- (7×7) Surface and Its Oxidation Process”, Takahide Umeda, Masayasu Nishizawa, Tetsuji Yasuda, Junichi Isoya, Satoshi Yamasaki, and Kazunobu TanakaElectron spin resonance (ESR) observation of dangling-bond states on the Si(111)- (7×7) surface is demonstrated for the first time. The ESR spectra clearly show that a reaction of molecular oxygen with the Si(111)- (7×7) surface is associated with the appearance of a new dangling-bond center at... (Read more)Si SiO2| EPR STM/AFM/SPM| Oxygen Pb Ps0 Ps1 Silicon dangling-bond interface surface .inp files: Si/surface(111) | last update: Masatoshi Sasaki
- 198. Physica B 308-310, 13 (2001) , “Misfortune, challenge, and success: defects in processed semiconductor devices ”, H. Cerva, M. Engelhardt, M. Hierlemann, M. Pölzl and T. TheniklProcess-induced defects are still a key issue in semiconductor device production. The increasing miniaturization and number of process steps as well as the introduction of new materials and processes make the understanding of defect generation more complex. In this paper, we describe small defects... (Read more)
- 199. Physica B 302-303, 249-256 (2001) , “Hydrogen-Enhanced Clusterization of Intrinsic Defects and Impurities in Silicon”, B. N. Mukashev, Kh. A. Abdullin, Yu. V. Gorelkinskii, M. F. Tamendarov and S. Zh. TokmoldinFormation of intrinsic and impurity defect complexes in hydrogenated monocrystalline silicon is studied. Hydrogen was incorporated into samples by different ways: either by proton implantation at 80 and 300 K, or by annealing at 1250°C for 30–60 min in a sealed quartz ampoule containing... (Read more)
- 200. Physica B 302-303, 233-238 (2001) , “Complexes of Gold and Platinum with Hydrogen in Silicon”, P. T. Huy and C. A. J. AmmerlaanThree centers that involve gold or platinum and hydrogen have been observed in n-type hydrogenated silicon by electron paramagnetic resonance. The first two centers, labeled Si-NL63 and Si-NL64, were detected in the gold-doped samples revealing hyperfine interaction with two gold atoms for the... (Read more)
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