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- 1. Appl. Phys. Lett. 88, 153509 (2006) , “Deep energy levels in RuO2/4H–SiC Schottky barrier structures”, L. Stuchlikova, D. Buc, L. Harmatha, U. Helmersson, W. H. Chang, I. BelloRuO2/4HSiC Schottky diode structures based on n-type 4HSiC (7×1017 cm3) with stoichiometric RuO2 Schottky contacts were characterized by electrical capacitance-voltage and current voltage methods and deep-level transient... (Read more)
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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