Papers - tagged 'GaN' - Defect dat@base
http://esrlab.jp/div-media/defect/index.php?q=&material=GaN&method=&defect=&sb=u
Papers - Defect dat@base2010-02-22T16:14:47+09:00Electron paramagnetic resonance of defects with metastable properties in crystalline GaN
http://dx.doi.org/10.1134/1.1130626
P. G. Baranov, I. V. Il'in, E. N. Mokhov, V. A. Khramtsov, Phys. Solid State 40, 1648 (1998) 2010-02-22T16:14:47+09:00Enhanced Ferromagnetism and Tunable Saturation Magnetization of Mn/C Codoped GaN Nanostructures Synthesized by Carbothermal Nitridation
http://dx.doi.org/10.1021/ja807030v
Zeyan Wang, Baibiao Huang, Lin Yu, Ying Dai, Peng Wang, Xiaoyan Qin, Xiaoyang Zhang, Jiyong Wei, Jie Zhan, Xiangyang Jing, Haixia Liu, and Myung-Hwan Whangbo, J.Am.Chem.Soc. 130, 48 (2008) , ACS2010-02-21T18:19:06+09:00Electrically Detected Magnetic Resonance (EDMR) of Defects in GaN Light Emitting Diodes
http://dx.doi.org/10.1002/1521-396X(199702)159:2<R5::AID-PSSA99995>3.0.CO;2-1
M.W.Bayerl , M.S.Brandt , M.Stutzmann, phys. stat. sol. (a) 159, R5 (1997) 2010-01-18T15:59:04+09:00Radiospectroscopy of wide-gap semiconductors: SiC and GaN
http://dx.doi.org/10.1134/1.1130855
P. G. Baranov, Phys. Solid State 41, 712 (1999) 2009-10-07T15:58:36+09:00Transition and rare-earth elements in the SiC and GaN wide-gap semiconductors: recent EPR studies
http://dx.doi.org/10.1134/1.1130872
P. G. Baranov, I. V. Il'in, E. N. Mokhov, V. A. Khramtsov, Phys. Solid State 41, 783 (1999) 2009-10-07T15:57:36+09:00Comprehensive characterization of hydride VPE grown GaN layers and templates
http://dx.doi.org/10.1016/S0927-796X(01)00031-6
H. MorkoƧ, Mater. Sci. Eng. R 33, 135-207 (2001) 2008-05-29T11:09:04+09:00Atomistic modeling of the (a+c)-mixed dislocation core in wurtzite GaN
http://dx.doi.org/10.1103/PhysRevB.75.115201
I. Belabbas, A. Béré, J. Chen, S. Petit, M. Akli Belkhir, P. Ruterana, and G. Nouet, Phys. Rev. B 75, 115201 (2007) 2007-07-13T00:46:07+09:00Influence of excited states of a deep substitutional dopant on majority-carrier concentration in semiconductors
http://dx.doi.org/10.1103/PhysRevB.74.245216
Hideharu Matsuura, Phys. Rev. B 74, 245216 (2006) 2007-07-10T11:54:45+09:00Optical study of excitation and deexcitation of Tm in GaN quantum dots
http://dx.doi.org/10.1103/PhysRevB.74.155310
Thomas Andreev, Nguyen Quang Liem, Yuji Hori, Mitsuhiro Tanaka, Osamu Oda, Daniel Le Si Dang, Bruno Daudin, and Bruno Gayral, Phys. Rev. B 74, 155310 (2006) 2007-06-28T15:34:01+09:00Magnetic phases and anisotropy in Gd-doped GaN
http://dx.doi.org/10.1103/PhysRevB.74.195207
L. Pérez, G. S. Lau, S. Dhar, O. Brandt, and K. H. Ploog, Phys. Rev. B 74, 195207 (2006) 2007-06-28T10:27:53+09:00Magnetopolaron effect on shallow donors in GaN
http://dx.doi.org/10.1103/PhysRevB.74.195205
A. Wysmoek, R. Stpniewski, M. Potemski, B. Chwalisz-Pitka, K. Pakua, J. M. Baranowski, D. C. Look, S. S. Park, and K. Y. Lee, Phys. Rev. B 74, 195205 (2006) 2007-06-28T10:26:33+09:00Compensating point defects in 4He+-irradiated InN
http://dx.doi.org/10.1103/PhysRevB.75.193201
F. Tuomisto, A. Pelli, K. M. Yu, W. Walukiewicz, and W. J. Schaff, Phys. Rev. B 75, 193201 (2007) 2007-06-27T20:20:20+09:00Ab initio study of electronic and magnetic properties of the C-codoped Ga1−xMnxN (100) surface
http://dx.doi.org/10.1103/PhysRevB.75.035322
Q. Wang, Q. Sun, and P. Jena, Phys. Rev. B 75, 035322 (2007) 2007-06-25T19:18:24+09:00Ferromagnetic to ferrimagnetic crossover in Cr-doped GaN nanohole arrays
http://dx.doi.org/10.1103/PhysRevB.75.075312
Q. Wang, Q. Sun, P. Jena, and Y. Kawazoe, Phys. Rev. B 75, 075312 (2007) 2007-06-18T12:06:08+09:00Microcrack-induced strain relief in GaN/AlN quantum dots grown on Si(111)
http://dx.doi.org/10.1103/PhysRevB.75.075306
G. Sarusi, O. Moshe, S. Khatsevich, D. H. Rich, and B. Damilano, Phys. Rev. B 75, 075306 (2007) 2007-06-18T12:04:27+09:00Electron backscatter diffraction and electron channeling contrast imaging of tilt and dislocations in nitride thin films
http://dx.doi.org/10.1103/PhysRevB.75.085301
C. Trager-Cowan, F. Sweeney, P. W. Trimby, A. P. Day, A. Gholinia, N.-H. Schmidt, P. J. Parbrook, A. J. Wilkinson, and I. M. Watson, Phys. Rev. B 75, 085301 (2007) 2007-06-18T11:27:55+09:00Internal structure of the neutral donor-bound exciton complex in cubic zinc-blende and wurtzite semiconductors
http://dx.doi.org/10.1103/PhysRevB.75.085204
Bernard Gil, Pierre Bigenwald, Mathieu Leroux, Plamen P. Paskov, and Bo Monemar, Phys. Rev. B 75, 085204 (2007) 2007-06-18T11:21:35+09:00Effect of screw dislocation density on optical properties in n-type wurtzite GaN
http://dx.doi.org/10.1063/1.2407455
Jeong Ho You and H. T. Johnson, J. Appl. Phys. 101, 023516 (2007) 2007-02-22T13:40:37+09:00Optically-detected magnetic resonance of spin-paired complexes emitting in the 2.3 eV spectral region in Mg-doped GaN
http://dx.doi.org/10.1103/PhysRevB.74.235205
G. N. Aliev, S. Zeng, S. J. Bingham, D. Wolverson, J. J. Davies, T. Wang, and P. J. Parbrook, Phys. Rev. B 74, 235205 (2006) 2007-02-01T11:20:12+09:00Density functional theory investigation of N interstitial migration in GaN
http://dx.doi.org/10.1063/1.2402589
R. R. Wixom and A. F. Wright, J. Appl. Phys. 100, 123108 (2006) 2007-02-01T10:31:39+09:00Spatial distribution of deep level defects in crack-free AlGaN grown on GaN with a high-temperature AlN interlayer
http://dx.doi.org/10.1063/1.2402964
Q. Sun, H. Wang, D. S. Jiang, R. Q. Jin, Y. Huang, S. M. Zhang, H. Yang, U. Jahn, and K. H. Ploog, J. Appl. Phys. 100, 123101 (2006) 2007-02-01T10:26:02+09:00Picosecond spin relaxation of acceptor-bound exciton in wurtzite GaN
http://dx.doi.org/10.1063/1.2374686
H. Otake, T. Kuroda, T. Fujita, T. Ushiyama, A. Tackeuchi, T. Chinone, J.-H. Liang, and M. Kajikawa, Appl. Phys. Lett. 89, 182110 (2006) 2006-12-14T17:37:45+09:00Generation of misfit dislocations by basal-plane slip in InGaN/GaN heterostructures
http://dx.doi.org/10.1063/1.2388895
R. Liu, J. Mei, S. Srinivasan, F. A. Ponce, H. Omiya, Y. Narukawa, and T. Mukai, Appl. Phys. Lett. 89, 201911 (2006) 2006-12-14T16:36:10+09:00Fermi level pinning in heavily neutron-irradiated GaN
http://dx.doi.org/10.1063/1.2361157
A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, N. G. Kolin, D. I. Merkurisov, V. M. Boiko, K. D. Shcherbatchev, V. T. Bublik, M. I. Voronova, I-H. Lee, C. R. Lee, S. J. Pearton, A. Dabirian, and A. V. Osinsky, J. Appl. Phys. 100, 093715 (2006) 2006-12-14T16:00:39+09:00Electronic structure of rare-earth impurities in GaAs and GaN
http://dx.doi.org/10.1103/PhysRevB.74.165204
A. Svane, N. E. Christensen, L. Petit, Z. Szotek, and W. M. Temmerman, Phys. Rev. B 74, 165204 (2006) 2006-12-07T14:28:55+09:00Internal 5E ? 5T2 transition of Fe2+ in GaN
http://dx.doi.org/10.1103/PhysRevB.74.165201
E. Malguth, A. Hoffmann, and X. Xu, Phys. Rev. B 74, 165201 (2006) 2006-12-07T14:18:14+09:00Structural and electronic properties of Fe3+ and Fe2+ centers in GaN from optical and EPR experiments
http://dx.doi.org/10.1103/PhysRevB.74.165202
E. Malguth, A. Hoffmann, W. Gehlhoff, O. Gelhausen, M. R. Phillips, and X. Xu, Phys. Rev. B 74, 165202 (2006) 2006-12-07T14:16:41+09:00Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence
http://dx.doi.org/10.1063/1.2357881
N. Pauc, M. R. Phillips, V. Aimez, and D. Drouin, Appl. Phys. Lett. 89, 161905 (2006) 2006-12-07T13:19:56+09:00Stress dependence of the near-band-gap cathodoluminescence spectrum of GaN determined by spatially resolved indentation method
http://dx.doi.org/10.1063/1.2360152
Alessandro Alan Porporati, Yoshitomo Tanaka, Atsuo Matsutani, Wenliang Zhu, and Giuseppe Pezzotti, J. Appl. Phys. 100, 083515 (2006) 2006-11-16T14:19:14+09:00Defects in Ga(In)NAs thin films grown by atomic H-assisted molecular beam epitaxy
http://dx.doi.org/10.1063/1.2353794
Yukiko Shimizu, Yusuke Mura, Akira Uedono, and Yoshitaka Okada, J. Appl. Phys. 100, 064910 (2006) 2006-11-16T14:03:08+09:00Damage production in GaAs and GaAsN induced by light and heavy ions
http://dx.doi.org/10.1063/1.2336306
C. Björkas, K. Nordlund, K. Arstila, J. Keinonen, V. D. S. Dhaka, and M. Pessa, J. Appl. Phys. 100, 053516 (2006) 2006-11-16T13:36:57+09:00Spatially resolved distribution of dislocations and crystallographic tilts in GaN layers grown on Si(111) substrates by maskless cantilever epitaxy
http://dx.doi.org/10.1063/1.2234807
R. I. Barabash, C. Roder, G. E. Ice, S. Einfeldt, J. D. Budai, O. M. Barabash, S. Figge, and D. Hommel, J. Appl. Phys. 100, 053103 (2006) 2006-11-16T13:30:39+09:00Measurement of temperature-dependent defect diffusion in proton-irradiated GaN(Mg, H)
http://dx.doi.org/10.1063/1.2207554
R. M. Fleming and S. M. Myers, J. Appl. Phys. 100, 043513 (2006) 2006-11-16T13:01:29+09:00Spin-Dependent Processes and Mg-Acceptors in GaN Single Quantum Well Diodes and p-Type GaN Films
http://dx.doi.org/10.1002/(SICI)1521-3951(199812)210:2<389::AID-PSSB389>3.0.CO;2-Y
M.W.Bayerl , M.S.Brandt , H.Angerer , O.Ambacher , M.Stutzmann, phys. stat. sol. (b) 210, 389 (1998) 2006-11-09T21:14:34+09:00Preferential substitution of Fe on physically equivalent Ga sites in GaN
http://dx.doi.org/10.1016/j.physb.2005.12.124
W. Gehlhoff, D. Azamat, U. Haboeck, A. Hoffmann, Physica B 376-377, 486 (2006) 2006-11-09T20:03:34+09:00Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au/GaN Schottky contacts
http://dx.doi.org/10.1063/1.2358207
R. X. Wang, S. J. Xu, S. L. Shi, C. D. Beling, S. Fung, D. G. Zhao, H. Yang, and X. M. Tao, Appl. Phys. Lett. 89, 143505 (2006) 2006-11-09T17:15:15+09:00Contactless electromodulation spectroscopy of AlGaN/GaN heterostructures with a two-dimensional electron gas: A comparison of photoreflectance and contactless electroreflectance
http://dx.doi.org/10.1063/1.2206707
R. Kudrawiec, M. Syperek, M. Motyka, J. Misiewicz, R. Paszkiewicz, B. Paszkiewicz, M. T?acza?a, J. Appl. Phys. 100, 013501 (2006) 2006-11-09T16:33:16+09:00Effect of threading dislocation density on Ni/n-GaN Schottky diode I-V characteristics
http://dx.doi.org/10.1063/1.2219985
A. R. Arehart, B. Moran, J. S. Speck, U. K. Mishra, S. P. DenBaars, and S. A. Ringel, J. Appl. Phys. 100, 023709 (2006) 2006-11-09T16:08:04+09:00Lattice site location and annealing behavior of implanted Ca and Sr in GaN
http://dx.doi.org/10.1063/1.2215091
B. De Vries, A. Vantomme, U. Wahl, J. G. Correia, J. P. Araújo, W. Lojkowski, and D. Kolesnikov, J. Appl. Phys. 100, 023531 (2006) 2006-11-09T15:57:55+09:00Cathodoluminescence microscopy and spectroscopy of GaN epilayers microstructured using surface charge lithography
http://dx.doi.org/10.1063/1.2214210
C. Díaz-Guerra, J. Piqueras, O. Volciuc, V. Popa, and I. M. Tiginyanu, J. Appl. Phys. 100, 023509 (2006) 2006-11-09T15:36:13+09:00Properties of Fe-doped semi-insulating GaN structures
http://dx.doi.org/10.1116/1.1633776
A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, S. J. Pearton, J. Vac. Sci. Technol. B 22, 120-125 (2004) 2006-11-07T18:23:10+09:00Influence of residual oxygen impurity in quaternary InAlGaN multiple-quantum-well active layers on emission efficiency of ultraviolet light-emitting diodes on GaN substrates
http://dx.doi.org/10.1063/1.2200749
Takashi Kyono, Hideki Hirayama, Katsushi Akita, Takao Nakamura, Masahiro Adachi, and Koshi Ando, J. Appl. Phys. 99, 114509 (2006) 2006-10-26T12:39:39+09:00Theoretical properties of the N vacancy in p-type GaN(Mg,H) at elevated temperatures
http://dx.doi.org/10.1063/1.2195894
S. M. Myers, A. F. Wright, M. Sanati, and S. K. Estreicher, J. Appl. Phys. 99, 113506 (2006) 2006-10-26T12:18:25+09:00Thermal stability of in-grown vacancy defects in GaN grown by hydride vapor phase epitaxy
http://dx.doi.org/10.1063/1.2180450
F. Tuomisto, K. Saarinen, T. Paskova, B. Monemar, M. Bockowski, and T. Suski, J. Appl. Phys. 99, 066105 (2006) 2006-10-19T21:54:44+09:00Optical activation of Eu ions in nanoporous GaN films
http://dx.doi.org/10.1063/1.2191647
A. P. Vajpeyi, S. Tripathy, L. S. Wang, B. C. Foo, S. J. Chua, E. A. Fitzgerald, and E. Alves, J. Appl. Phys. 99, 104305 (2006) 2006-10-19T21:21:30+09:00Effects of edge dislocations and intentional Si doping on the electron mobility of n-type GaN films
http://dx.doi.org/10.1063/1.2348740
D. G. Zhao, Hui Yang, J. J. Zhu, D. S. Jiang, Z. S. Liu, S. M. Zhang, Y. T. Wang, and J. W. Liang, Appl. Phys. Lett. 89, 112106 (2006) 2006-09-28T11:27:38+09:00Accurate dependence of gallium nitride thermal conductivity on dislocation density
http://dx.doi.org/10.1063/1.2335972
C. Mion, J. F. Muth, E. A. Preble, and D. Hanser, Appl. Phys. Lett. 89, 092123 (2006) 2006-09-21T11:32:23+09:00Photoluminescence studies of impurity transitions in AlGaN alloys
http://dx.doi.org/10.1063/1.2337856
N. Nepal, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 89, 092107 (2006) 2006-09-21T11:13:52+09:00Formation of nanovoids in high-dose hydrogen implanted GaN
http://dx.doi.org/10.1063/1.2221526
I. Radu, R. Singh, R. Scholz, U. Gösele, S. Christiansen, G. Brüderl, C. Eichler, and V. Härle, Appl. Phys. Lett. 89, 031912 (2006) 2006-08-31T17:55:41+09:00Effects of cation d states on the structural and electronic properties of III-nitride and II-oxide wide-band-gap semiconductors
http://dx.doi.org/10.1103/PhysRevB.74.045202
Anderson Janotti, David Segev, and Chris G. Van de Walle, Phys. Rev. B 74, 045202 (2006) 2006-08-31T16:26:16+09:00