Showing
10, 25, 50, 100, 500, 1000, all papers per page.
Sort by:
last publication date,
older publication date,
last update date.
- 101. Colloids and Surf. A 72, 161-164 (1993) , “Study of a paramagnetic center on an SiO-treated GaAs surface”, G. J. Gerardi, F. C. Rong, E. H. Poindexter, M. Harmatz, H. Shen , W. L. WarrenWe have observed enhanced photoluminescence and an isotropic, singlet electron paramagnetic resonance (EPR) signal from samples of SI c-GaAs as a result of a thermal annealing treatment with SiO under vacuum. The treated samples showed a tenfold increase in photoluminescence. The EPR signal was... (Read more)
- 102. Phys. Lett. A 178, 205-208 (1993) , “A new ESR signal of intrinsic defects in electron-irradiated p-type GaAs”, Y. Q. JiaH. J. von BardelebenElectron spin resonance studies of p-type ([Zn] = 7 × 1017 cm−3) GaAs irradiated by 1.5 MeV electrons reveal a new signal at g = 1.99. The ratio of spin concentration to electron dose is determined as 3 cm−1, the highest among those reported in electron- irradiated GaAs. We... (Read more)
- 103. Phys. Rev. B 48, 4437 (1993) , “Identification of the BiGa heteroantisite defect in GaAs:Bi”, M. Kunzer, W. Jost, U. Kaufmann, H. M. Hobgood, R. N. ThomasGaAs lightly doped with the heaviest group-V atom, bismuth (Bi), has been studied by conventional electron-spin resonance (ESR) and by ESR detected via the magnetic-circular-dichroism (MCD) absorption. A new Bi-related sharp-line MCD band has been observed on which two MCD-ESR lines have been... (Read more)
- 104. Phys. Rev. B 47, 3987 (1993) , “Evidence for an anti-structure-pair in GaAs generated by electron irradiation at room temperature obtained from optically detected electron-nuclear double resonance”, K. Krambrock and J.-M. SpaethThe microscopic structure of a paramagnetic arsenic antisite-related defect in GaAs electron irradiated at room temperature has been studied using optically detected electron-nuclear double resonance (ODENDOR). In addition to the ODENDOR lines of the nearest and next-nearest As ligands those of a Ga... (Read more)
- 105. Solid State Commun. 88, 887-889 (1993) , “Submillimeter EPR evidence for the As antisite defect in GaAs”, R. J. Wagner, J. J. Krebs and G. H. StaussA. M. WhiteA new EPR spectrum has been observed in semi-insulating GaAs with a sub- millimeter laser magnetic resonance spectrometer. The spectrum is isotropic with g= 2.04 ± 0.01 at v=11.236cm-1. The hyperfine interaction parameter |A| (I=3/2) is 0.090 ± 0.001 cm-1.The spectrum is attributed to the As antisite defect in GaAs and the parameters are compatible with the P antisite defect in GaP. (Read more)
- 106. Appl. Phys. Lett. 60, 718 (1992) , “Optically detected electron paramagnetic resonance of arsenic antisites in low-temperature GaAs layers”, H.-J. Sun, G. D. Watkins, F. C. Rong, L. Fotiadis, E. H. PoindexterArsenic antisites in GaAs layers grown by molecular-beam epitaxy at low substrate temperatures (~200 °C) were observed using electron paramagnetic resonance (EPR), magnetic circular dichroism in absorption (MCDA), and MCDA-detected EPR. This observation confirms that there is a MCDA band... (Read more)
- 107. J. Appl. Phys. 71, 4615 (1992) , “Paramagnetic defects in neutron-irradiated GaP”, T. Benchiguer, A. Goltzené, B. Mari, and C. SchwabAiming at a better understanding of intrinsic defects in III-V compounds, we reinvestigate fast-neutron-irradiated GaP. The surprising result is the observation of a similar spectrum, formerly ascribed to Asi-related defects in GaAs. Annealing experiments suggest this spectrum... (Read more)
- 108. Phys. Rev. B 45, 5933 (1992) , “Magnetic circular dichroism of the DX center in Al0.35Ga0.65As:Te”, R. E. Peale, Y. Mochizuki, H. Sun, G. D. WatkinsMagneto-optical absorption spectra of 0.4-mm-thick, single-crystal Al0.35Ga0.65As:Te give evidence for two bleachable absorbers, one of which is identified as the DX center. The bleached-state absorption coefficient and magnetic circular dichroism (MCD), measured from 0.66 to... (Read more)
- 109. Phys. Rev. B 45, 4122 (1992) , “First-principles study of fully relaxed vacancies in GaAs”, K. Laasonen, R. M. Nieminen, and M. J. PuskaThe structural and electronic properties of vacancies in GaAs have been studied using ab initio molecular dynamics. The atomic structures of vacancies in different charge states have been optimized by using a simulated-annealing procedure. The neighbor-atom relaxations are modest for neutral, singly... (Read more)
- 110. Phys. Rev. B 45, 3372 (1992) , “Electron-paramagnetic-resonance study of GaAs grown by low-temperature molecular-beam epitaxy”, H. J. von Bardeleben, M. O. Manasreh, D. C. Look, K. R. Evans, C. E. StutzElectron-paramagnetic-resonance results demonstrate an arsenic-antisite related deep donor defect to be the dominant native defect in GaAs layers grown by low-temperature molecular-beam epitaxy (LTMBE). This defect is different from the EL2-related native arsenic-antisite defect. The... (Read more)
- 111. Phys. Rev. B 45, 3349 (1992) , “Magnetic circular dichroism and optical detection of electron paramagnetic resonance of the SbGa heteroantisite defect in GaAs:Sb”, P. Omling, D. M. Hofmann, M. Kunzer, M. Baeumler, U. KaufmannIn an investigation of GaAs doped with Sb to a concentration of ≊1×1019 cm-3, the electron-paramagnetic-resonance (EPR) signal of the SbGa heteroantisite defect has been optically detected by monitoring the microwave-induced changes in the... (Read more)
- 112. Phys. Rev. B 45, 1645 (1992) , “Electron-paramagnetic-resonance observation of gallium vacancy in electron-irradiated p-type GaAs”, Y. Q. Jia, H. J. von Bardeleben, D. Stievenard, C. DelerueWe report an observation by electron paramagnetic resonance (EPR) of the gallium vacancy defect in GaAs. The defect is observed after electron irradiation of p-type GaAs. The gallium vacancy defect shows trigonal symmetry; its spin-Hamiltonian parameters are determined as S=1/2,... (Read more)
- 113. Phys. Rev. B 45, 13745 (1992) , “Validity of the broken-bond model for the DX center in GaAs”, Mineo Saito, Atsushi Oshiyama, Osamu SuginoThe validity of the broken-bond model for the DX center is examined by performing supercell calculations within the local-density approximation for column-IV donors in GaAs. We confirm that the broken-bond geometry is the most stable among the atomic structures accompanied with large lattice... (Read more)
- 114. Phys. Rev. Lett. 68, 1582 (1992) , “Breathing-Mode Relaxation Associated with Electron Emission and Capture Processes of EL2 in GaAs”, G. A. Samara, D. W. Vook, J. F. GibbonsAnalysis of the effects of hydrostatic pressure on the electronic emission and capture properties of the (0/+) and (+/++) deep levels of the EL2 defect in GaAs leads to the following conclusions: (1) Both levels move higher in the band gap with pressure; (2) relatively large inward (outward) lattice... (Read more)
- 115. Rev. Sci. Instrum. 63, 5742 (1992) , “Sensitive electron paramagnetic resonance spectrometer for studying defects in semiconductors”, H. E. Altink, T. Gregorkiewicz, and C. A. J. AmmerlaanThe construction of a state-of-the-art electron paramagnetic resonance spectrometer for application to the studies of defects in semiconductors is described. The spectrometer is of superheterodyne type with low-frequency modulation of the magnetic field and working in dispersion. The use of a... (Read more)
- 116. Rev. Sci. Instrum. 63, 4251 (1992) , “Saturation recovery electron paramagnetic resonance spectrometer”, Richard W. Quine, Sandra S. Eaton, and Gareth R. EatonA versatile saturation recovery accessory based on a small, special-purpose timing controller and an efficient mix of coaxial and waveguide microwave components has been added to a commercial electron paramagnetic resonance (EPR) spectrometer. The spectrometer was designed for study of the spin... (Read more)
- 117. Appl. Phys. Lett. 59, 2281 (1991) , “Electron-paramagnetic-resonance study of the isolated arsenic antisite in electron irradiated GaAs and its relation to the EL2 center”, F. C. Rong, W. R. Buchwald, M. Harmatz, E. H. Poindexter, W. L. WarrenArsenic antisites produced in GaAs by room-temperature electron irradiation (RTEI) are examined by electron paramagnetic resonance (EPR). For the first time, this RTEI antisite, which has been believed to be the isolated antisite, is found to be metastable. The most efficient photon energy for... (Read more)
- 118. Appl. Phys. Lett. 58, 502 (1991) , “Photoluminescence and magnetic resonance studies of Er3 + in MeV ion-implanted GaAs”, P. B. Klein, F. G. Moore, and H. B. DietrichThe effects of post-implantation annealing have been studied in MeV Er-implanted GaAs by monitoring the Er3 + electron paramagnetic resonance (EPR) signal as well as the Er3 + and near-band-edge photoluminescence (PL) spectra as a function of the anneal temperature. Er3... (Read more)
- 119. Appl. Surf. Sci. 50, 277-280 (1991) , “Donor-acceptor charge transfers in bulk semi-insulating GaAs as revealed by photo-EPR”, T. Benchiguer, E. Christoffel, A. Goltzené, B. Mari, B. Meyer and C. SchwabWe have compared two different models which give account for the photoquenching behaviour of the As+Ga-related defects. The first model is based on the so-called metastability of the centre and the second one on an electrical charge transfer, resulting from the trapping of the photo-generated... (Read more)
- 120. Appl. Surf. Sci. 50, 273-276 (1991) , “Interstitial Mn as a new donor in GaP and GaAs: an EPR study”, S. J. C. H. M. van Gisbergen, M. Godlewski, T. Gregorkiewicz , C. A. J. AmmerlaanWe report the observation of a new electron paramagnetic resonance centre in neutron-irradiated GaP and a similar new EPR centre in Mn-doped GaAs. Both centres have been identified as interstitial Mn and act as a donor. To our knowledge this is the first observation by EPR of an interstitial... (Read more)
- 121. Appl. Surf. Sci. 48-49, 478-482 (1991) , “ESR studies on luminescent ZnS:Mn films and CdS---ZnS:Mn superlattices deposited on a GaAs(100) substrate by hot-wall epitaxy”, Takato Nakamura, Yoji Takeuchi, Hitoshi Muramatsu , Hiroshi Fujiyasu , Yoichiro NakanishiLuminescent ZnS:Mn thin films and CdS---ZnS:Mn superlattices on a GaAs(100) substrate prepared by the hot-wall epitaxy technique have been examined by means of electron spin resonance (ESR) spectroscopy. It was observed that the lowest energy transition assigned to M1 = −5/2 splits into... (Read more)
- 122. J. Phys. Soc. Jpn. 60, 3093 (1991) , “First Principle Calculation of the DX-CenterGround-States in GaAs, AlxGa1-xAs Alloysand AlAs/GaAs Superlattices”, Eiichi Yamaguchi, Kenji Shiraishi, Takahisa OhnoThe atomistic nature of the deep donor levels referred to as DX centers in GaAs, AlxGa1-xAs alloys and AlAs/GaAs superlattices is investigated by applying the ab initio self-consistent pseudopotential method to 64-atom super cells. The total energy and... (Read more)
- 123. Mater. Sci. Forum 83-87, 887 (1991) , “Defects in Semisonductors 16”, K. Krambrock, J.-M. Spaeth
- 124. Phys. Rev. B 44, 3012 (1991) , “Magnetic-resonance studies of interstitial Mn in GaP and GaAs”, S. J. C. H. M. van Gisbergen, M. Godlewski, T. Gregorkiewicz, and C. A. J. AmmerlaanWe report the observation of an additional electron-paramagnetic-resonance (EPR) center in neutron-irradiated GaP. The center labeled as GaP-NL1 was further investigated with the electron-nuclear double-resonance technique. We also observed another, similar EPR center in GaAs doped with Mn, which we... (Read more)
- 125. Phys. Rev. B 44, 10525 (1991) , “Electronic structure and electron-paramagnetic-resonance properties of intrinsic defects in GaAs”, C. DelerueThe electronic structure of vacancies, antisites, self-interstitials, and some related complex defects in GaAs is calculated using a self-consistent semiempirical tight-binding technique. In particular, we give the electron densities on the various atoms to predict the... (Read more)
- 126. Phys. Rev. B 43, 14569 (1991) , “Kinetics of holes optically excited from the AsGa EL2 midgap level in semi-insulating GaAs”, G. Hendorfer and U. KaufmannElectron paramagnetic resonance (EPR) has been used to study the growth of the dominant acceptor EPR signals FR1 and GR2 in undoped semi-insulating GaAs under illumination as well as their spontaneous intensity changes when the light is switched off. These studies locate the FR1 level at... (Read more)
- 127. Phys. Rev. Lett. 67, 112 (1991) , “Photoluminescence Studies of the EL2 Defect in Gallium Arsenide under External Perturbations”, M. K. Nissen, A. Villemaire, and M. L. W. ThewaltThe fine structure in the 0.61-eV photoluminescence band from the deep defect EL2 in semi-insulating GaAs has been studied under uniaxial stress and magnetic field. The results show no deviation from full Td symmetry and hence support the isolated-arsenic-antisite model of EL2.... (Read more)
- 128. Phys. Rev. Lett. 66, 774 (1991) , “Local-vibrational-mode spectroscopy of DX centers in Si-doped GaAs under hydrostatic pressure”, J. A. Wolk, M. B. Kruger, J. N. Heyman, W. Walukiewicz, R. Jeanloz, E. E. HallerWe report the observation of a local vibrational mode (LVM) in hydrostatically stressed, Si-doped GaAs. The corresponding infrared absorption peak is distinct from the SiGa shallow-donor LVM peak and is assigned to the Si DX center. The relative intensities of the Si DX LVM and the Si... (Read more)
- 129. Rev. Sci. Instrum. 62, 2969 (1991) , “Electron paramagnetic resonance Q-band bridge with GaAs field-effect transistor signal amplifier and low-noise Gunn diode oscillator”, James S. Hyde, M. E. Newton, Robert A. Strangeway, Theodore G. Camenisch, and W. FronciszA Varian Q-band E-110 microwave bridge for electron paramagnetic resonance (EPR) spectroscopy has been modified by addition of a low-phase noise Gunn diode oscillator of our own design, a low-noise GaAs field-effect transistor microwave signal amplifier, and a balanced mixer requiring high... (Read more)
- 130. Semicond. Sci. Technol. 6, B9 (1991) , “Comparison of three DX structural calculations presented at Thessaloniki”, G. A. BaraffThree structural calculations of the DX centre presented at Thessaloniki are of especial interest. Although they were carried out using nominally the same calculational apparatus, namely first-principles pseudopotentials, local density approximation, large unit cells etc, the three reached vastly... (Read more)
- 131. Semicond. Sci. Technol. 6, B70 (1991) , “Bistability, local symmetries and charge states of Sn-related donors in AlxGa1-xAs and GaAs under pressure studied by Mossbauer spectroscopy”, D. L. Williamson, P. GibartThe bistable character of Sn donors AlxGa1-xAs for x>0.2 or in GaAs under pressure >2.4 GPa has been studied by 119Sn Mossbauer spectroscopy (MS). The shallow Sn donor state and the deep Sn DX state are observed to exist simultaneously and are readily... (Read more)
- 132. Semicond. Sci. Technol. 6, B111 (1991) , “Metastable defects in silicon: hints for DX and EL2?”, G. D. WatkinsA review is given of defects that display metastability in silicon, with emphasis on those that have been identified and the various mechanisms that they reveal for the phenomenon. Pair defects described include interstitial-iron-substitutional-group-III-acceptors and ones formed by interstitial... (Read more)
- 133. J. Appl. Phys. 67, R1 (1990) , “Deep donor levels (DX centers) in III-V semiconductors”, P. M. MooneyDX centers, deep levels associated with donors in III-V semiconductors, have been extensively studied, not only because of their peculiar and interesting properties, but also because an understanding of the physics of these deep levels is necessary in order to determine the usefulness... (Read more)
- 134. J. Cryst. Growth 102, 701-705 (1990) , “Influence of In-Doping on dislocations in Liquid Encapsulated Czochralski (LEC) grown gallium arsenide”, J. Wu, P. G. Mo and G. Y. WangS. Benakki, E. Christoffel, A. Goltzene and C. SchwabJ. R. Wang and C. H. LeeIn this study, the dislocation distribution in In-doped GaAs crystals is investigated by KOH etching. EPR (electron paramagnetic resonance) measurements are made on plastically deformed In-doped crystals. A mechanism for the elimination of dislocations by doping GaAs crystals with indium atoms is... (Read more)
- 135. Jpn. J. Appl. Phys. 29, L388 (1990) , “Direct Evidence for the Negative-U Property of the DX Center as Studied by Hydrostatic Pressure Experiments on GaAs Simultaneously Doped with Ge and Si”, Toshimasa Fujisawa, Junji Yoshino, Hiroshi KukimotoDX centers in GaAs codoped with Ge and Si have been investigated under a hydrostatic pressure, where Ge acts as a DX center, and Si as a shallow donor. It is demonstrated that the number of electrons trapped by the Ge DX center at 22 kbar increases with Si concentration and tends to saturate at a... (Read more)
- 136. Jpn. J. Appl. Phys. 29, L1572 (1990) , “Low-Temperature Static Magnetic Susceptibility of Al0.3Ga0.7As with DX Centers”, Shingo Katsumoto, Noriaki Matsunaga, Yasuhiro Yoshida, Katsuyuki Sugiyama, Shun-ichi KobayashiWe have measured the static magnetic susceptibility of Al0.3Ga0.7As doped with 1×1018 cm-3 Te from 20 mK to 1 K in order to study the electron ground state of the DX center. We observed Curie-law temperature dependence of the susceptibility which... (Read more)
- 137. Phys. Rev. B 42, 7174 (1990) , “Stability of DX centers in AlxGa1-xAs alloys ”, S. B. Zhang, D. J. ChadiThe band-gap dependence of the binding energy of Si-induced DX centers in AlxGa1-xAs alloys was determined from an ab initio total-energy approach. Band-structure modifications resulting from changes in alloy composition and hydrostatic pressure were examined. The... (Read more)
- 138. Phys. Rev. B 42, 3461 (1990) , “EPR evidence for As interstitial-related defects in semi-insulating GaAs”, E. Christoffel, T. Benchiguer, A. Goltzené, C. Schwab, Wang Guangyu, Wu JuWe report the analysis of the residual paramagnetic structure appearing in semi-insulating GaAs after microwave saturation of the AsGa-related spectrum and most intense after preliminary plastic deformation of the material. It is separable into two similar and correlated central hyperfine... (Read more)
- 139. Phys. Rev. B 42, 1500 (1990) , “Electron-paramagnetic-resonance study of the Te donor in Ga0.70Al0.30As”, H. J. von Bardeleben, M. Zazoui, S. Alaya, P. GibartWe report an electron-paramagnetic-resonance (EPR) study of a group-VI donor in Ga1-xAlxAs (x=0.30). No EPR spectrum associated with the DX ground state could be detected. After photoexcitation with E?0.6 eV an EPR spectrum is observed, which is attributed to the... (Read more)
- 140. Phys. Rev. B 42, 11791 (1990) , “Donor states in GaAs under hydrostatic pressure”, X. Liu, L. Samuelson, M.-E. Pistol, M. Gerling, and S. NilssonSpectroscopic studies have been carried out for GaAs crystals under hydrostatic pressure, intended for the investigation of effective-mass donor levels associated with different conduction-band minima and the DX center. Our results reveal the existence of three donor states appearing in the band... (Read more)
- 141. Phys. Rev. B 41, 5283 (1990) , “Fine structure of excitons in type-II GaAs/AlAs quantum wells”, H. W. van Kesteren, E. C. Cosman, W. A. J. A. van der Poel, C. T. FoxonOptically detected magnetic resonance in zero field as well as in a finite magnetic field has been used to study the excitons in type-II GaAs/AlAs quantum wells. The spectra are analyzed using the appropriate spin Hamiltonian for the quasi-two-dimensional indirect excitons. The electron-hole... (Read more)
- 142. Phys. Rev. B 41, 10206 (1990) , “Strain splitting of the X-conduction-band valleys and quenching of spin-valley interaction in indirect GaAs/AlxGa1-xAs:Si heterostructures”, U. Kaufmann, W. Wilkening, P. M. Mooney, T. F. KuechWe report electron-paramagnetic-resonance results for the shallow effective-mass 1s(T2) state of the Si donor associated with the X valleys in indirect-band-gap (x≥0.4) AlxGa1-xAs:Si layers grown on GaAs. The data confirm definitely that the heteroepitaxial strain... (Read more)
- 143. Phys. Rev. Lett. 65, 2046 (1990) , “Anion-Antisite-like Defects in III-V Compounds”, M. J. Caldas, J. Dabrowski, A. Fazzio, and M. SchefflerWe report ab initio calculations of total energies and electronic structures of P, As, and Sb donors in GaAs and InP. In the Td geometry, all these defects exhibit two donor states in the forbidden gap: an internal optical excitation energy of the order of 1 eV, and a Franck-Condon shift... (Read more)
- 144. Appl. Phys. Lett. 54, 1881 (1989) , “Structural properties of As-rich GaAs grown by molecular beam epitaxy at low temperatures”, M. Kaminska, Z. Liliental-Weber, E. R. Weber, T. George, J. B. Kortright, F. W. Smith, B-Y. Tsaur, A. R. CalawaGaAs layers grown by molecular beam epitaxy (MBE) at substrate temperatures between 200 and 300 °C were studied using transmission electron microscopy (TEM), x-ray diffraction, and electron paramagnetic resonance (EPR) techniques. High-resolution TEM cross-sectional images showed a high degree... (Read more)
- 145. Chin. Phys. 9, 976 (1989) , “Photoquenching of electronic paramagnetic resonance "AsGa" and metastable mechanism of EL2 defect in GaAs”, Zou Yuan-xi , Wang Guang-yu
- 146. J. Chem. Phys. 91, 69 (1989) , “Laser vaporization generation of 69Ga31P+ and 71Ga31P+ for neon matrix electron spin resonance studies: Electronic structure comparison with GaAs+ ”, Lon. B. Knight, Jr. and John O. HerlongThe 69GaP + and 71GaP + molecular ions have been generated by the combined methods of photoionization/laser vaporization for trapping in neon matrices at 4 K for electron spin resonance (ESR) investigation. The ground electronic state of GaP +... (Read more)
- 147. J. Vac. Sci. Technol. B 7, 710 (1989) , “Stoichiometry-related defects in GaAs grown by molecular-beam epitaxy at low temperatures”, M. Kaminska, E. R. Weber, Z. Liliental-Weber, R. Leon, Z. U. RekGaAs layers grown by molecular-beam epitaxy (MBE) at very low substrate temperatures have gained considerable interest as buffer layers for GaAs metalsemiconductor field effect transistors (MESFET's) due to high resistivity and excellent device isolation. However, the structure and the... (Read more)
- 148. Jpn. J. Appl. Phys. 28, L891 (1989) , “The Local-Environment-Dependent DX Centers: Evidence for the Single Energy Level with a Specified Configuration”, Toshio Baba, Masashi Mizuta, Toshimasa Fujisawa, Junji Yoshino, Hiroshi KukimotoThe energy-level structure of the DX centers corresponding to specific local environments was investigated under hydrostatic pressure. Several discrete DX levels, each of which was a well-defined single level, were clearly resolved. The energy level of the Si... (Read more)
- 149. Phys. Rev. B 40, 3872 (1989) , “Differentiation of electron-paramagnetic-resonance signals of arsenic antisite defects in GaAs”, Mark Hoinkis and Eicke R. WeberTemperature-dependence studies of GaAs electron-paramagnetic-resonance (EPR) quadruplet signals ascribed to arsenic antisite-related (AsGa+) defects are reported. Observations were made before and after white-light illumination in as-grown, thermally treated, plastically... (Read more)
- 150. Phys. Rev. B 39, 6253 (1989) , “Electron paramagnetic resonance identification of the SbGa heteroantisite defect in GaAs:Sb”, M. Baeumler, J. Schneider, U. Kaufmann, W. C. Mitchel, P. W. YuGaAs doped with antimony (Sb) to a level of 1019 cm-3 has been studied by electron paramagnetic resonance (EPR). A new EPR spectrum has been discovered which is identified as the SbGa heteroantisite defect. The electronic structure of this defect is practically... (Read more)
- 151. Phys. Rev. B 39, 5554 (1989) , “Electron-paramagnetic-resonance measurements of Si-donor-related levels in AlxGa1-xAs”, P. M. Mooney, W. Wilkening, U. Kaufmann, T. F. KuechWe report measurements of an EPR signal in indirect-gap Si-doped AlxGa1-xAs whose intensity increases after illumination at low temperature. The data indicate that this signal comes from a hydrogenic level associated with the X valley of the conduction band. Measurements of the... (Read more)
- 152. Phys. Rev. B 39, 5538 (1989) , “Unification of the properties of the EL2 defect in GaAs”, M. Hoinkis, E. R. Weber, W. Walukiewicz, J. Lagowski, M. Matsui, H. C. Gatos, B. K. Meyer, J. M. SpaethWe provide experimental unification of the properties of EL2 in GaAs, linking the measurements of optical absorption, deep-level transient spectroscopy, electron paramagnetic resonance (EPR), magnetic circular dichroism (MCD), optically detected electron-nuclear double resonance (ODENDOR). Results... (Read more)
- 153. Phys. Rev. B 39, 1966 (1989) , “Comment on "Atomic model for the EL2 defect in GaAs"”, H. J. von Bardeleben, J. C. Bourgoin, D. StievenardThe AsGa-VGa-VAs model for the EL2 defect in liquid encapsulated Czochralski grown GaAs proposed by Wager and Van Vechten is not supported by the experimental results: Neither divacancy defects nor gallium-vacancy-related defects have been observed by positron... (Read more)
- 154. Phys. Rev. B 39, 10063 (1989) , “Energetics of DX-center formation in GaAs and AlxGa1-xAs alloys ”, D. J. Chadi, K. J. ChangThe energetics of the shallow-deep transition of donor states in AlxGa1-xAs alloys and the problem of Fermi-level pinning by DX centers in highly doped GaAs are examined via simple theoretical models and ab initio self-consistent pseudopotential total-energy calculations. The... (Read more)
- 155. Phys. Rev. Lett. 63, 2276 (1989) , “Photoluminescence transients due to hole capture at DX centers in AlxGa1-xAs:Si”, G. Brunthaler, K. Ploog, W. JantschThe near-band-gap photoluminescence of AlGaAs:Si shows a slow intensity transient after cooling the sample in darkness to low temperatures. This transient correlates to the Si dopant concentration. By investigating the behavior for below- and above-band-gap illumination we show that the observed... (Read more)
- 156. Sov. Phys. Semicond. 23, 44 (1989) , “Influence of random fields on the ESR spectrum of MnGa acceptors in p-type GaAs”, N. S. Averkiev, A. A. Gutkin, O. G. Krasikova, E. B. Osipov, M. A. Reshchikov
- 157. Superlatt. Microstruct. 5, 99-102 (1989) , “Electron-spin-resonance in an AlGaAs---GaAs single-side doped quantum-well”, F. Malcher, G. Lommer, M. Dobers and G. WeimannThe spin-splitting of subband Landau levels in an Al0.35Ga0.65As-GaAs single-side doped quantum well is calculated selfconsistently using an effective 2×2 subband Hamiltonian, which is derived from a five-level k · p-model by fourth order perturbation theory and includes remote band... (Read more)
- 158. Appl. Phys. Lett. 53, 959 (1988) , “Characterization of semi-insulating GaAs wafers by room-temperature EL2-related photoluminescence”, Michio TajimaDeep level photoluminescence (PL) associated with the dominant midgap donor EL2 in semi-insulating (SI) GaAs crystals has been observed for the first time at room temperature. A broad emission band with a peak at 0.65 eV was observed always in commercial undoped SI GaAs wafers. The association of... (Read more)
- 159. Appl. Phys. Lett. 53, 749 (1988) , “Physical origin of the DX center”, J. C. Bourgoin and A. MaugerWhen intervalley mixing effects are large enough, they induce a sharp shallow deep instability for a substitutional impurity. We show that this is the case in GaAs for the ground state associated with the L valleys, which becomes located in the forbidden gap under hydrostatic pressure or in... (Read more)
- 160. Appl. Phys. Lett. 53, 2546 (1988) , “Effect of local alloy disorder on emission kinetics of deep donors (DX centers) in AlxGa1–xAs of low Al content”, P. M. Mooney, T. N. Theis, and S. L. WrightWe report measurements by deep level transient spectroscopy of electron emission from the deep donor level (DX center) in Si-doped GaAs and AlxGa1xAs of very low Al content. For the first time, discrete emission rates corresponding to different... (Read more)
- 161. Appl. Phys. Lett. 52, 383 (1988) , “Direct evidence of the DX center link to the L-conduction-band minimum in GaAlAs”, E. Calleja, A. Gomez, and E. MuñozHydrostatic pressure techniques together with deep level transient spectroscopy (DLTS) measurements have shown that the Si-DX center in GaAlAs is linked to the L-conduction-band minimum. When hydrostatic pressure is applied to a 74% Al content sample, an exponential reduction of... (Read more)
- 162. Appl. Phys. Lett. 52, 1689 (1988) , “Hole photoionization cross sections of EL2 in GaAs”, P. Silverberg, P. Omling, and L. SamuelsonThe spectral dependence of the hole photoionization cross section 0p" align="middle"> of EL2 in GaAs has been determined in absolute numbers at T=78 and 295 K. From simultaneous measurements of the electron photoionization cross section 0n" align="middle">,... (Read more)
- 163. J. Appl. Phys. 63, 1086 (1988) , “Deep-level analysis in Te-doped GaAs0.62P0.38”, M. Kaniewska and J. KaniewskiDeep-level transient spectroscopy and photocapacitance techniques have been used to study the features of the main electron trap, with thermal activation energy equal to EB=0.39 eV, present in Te-doped GaAs0.62P0.38, obtained by vapor-phase epitaxy.... (Read more)
- 164. J. Chem. Phys. 88, 481 (1988) , “Neon matrix ESR investigation of 69,71GaAs + generated by the photoionization of laser vaporized GaAs(s)”, Lon B. Knight, Jr. and J. T. PettyThe first spectroscopic results are reported for the 69,71GaAs + cation radical generated by photoionizing GaAs (g) produced by the pulsed laser vaporization of GaAs (s). The GaAs + cation was trapped in neon matrices at 4 K for ESR investigations... (Read more)
- 165. J. Electrochem. Soc. 135, 11C (1988) , “Degradation of III-V Opto-Electronic Devices”, O. Ueda
- 166. J. Non-Cryst. Solids 104, 85-94 (1988) , “Radiation damage in vitreous fused silica induced by MeV ion implantation*1”, Shi Chengru, Tan Manqi , T. A. TombrelloThe nature of E′1 defects in vitreous fused silica induced by high energy (1–17 MeV) Cl and F ion implantation in terms of ion fluence, ion energy, saturation behavior and annealing feature, has been studied and compared with results obtained after 2 MeV proton and 0.633 MeV... (Read more)
- 167. Phys. Rev. B 38, 6003 (1988) , “EL2 and the electronic structure of the AsGa-Asi pair in GaAs: The role of lattice distortion in the properties of the normal state”, G. A. Baraff, M. Lannoo, and M. SchlüterThe proposal that in its normal state EL2 is an AsGaAsi pair with a [111] axis and two-bond-length separation is tested by performing electronic structure calculations for that defect pair. The Asi is allowed to minimize its energy by moving along the [111] axis. Its... (Read more)
- 168. Phys. Rev. B 38, 5453 (1988) , “Electron-spin resonance in the two-dimensional electron gas of GaAs-AlxGa1-xAs heterostructures”, M. Dobers, K. v. Klitzing, G. WeimannElectron-spin resonance affects the magnetoresistivity of GaAs-AlxGa1-xAs heterostructures. With microwave frequencies of up to 70 GHz we studied systematically the spin splitting of the Landau levels in magnetic fields up to 14.5 T. The resonances within a certain Landau level... (Read more)
- 169. Phys. Rev. B 37, 8298 (1988) , “Evidence for large lattice relaxation at the DX center in Si-doped AlxGa1-xAs”, P. M. Mooney, G. A. Northrop, T. N. Morgan, H. G. GrimmeissNew measurements of the energy dependence of the photoionization cross section of the DX center in Si-doped AlxGa1-xAs are reported. With the use of a tunable infrared laser which provides sufficient light intensity in a very narrow wavelength range, the photoionization cross... (Read more)
- 170. Phys. Rev. B 37, 1043 (1988) , “Characterization of DX center in the indirect AlxGa1-xAs alloy”, M. Mizuta, K. MoriThe behavior of the DX center in AlxGa1-xAs (x?0.6) doped with Si and Se was investigated through photo-Hall measurements. The simultaneous existence of the shallow (metastable) and deep DX levels has been proven by the observation of persistent photoconductivity (PPC) whose... (Read more)
- 171. Phys. Rev. Lett. 61, 1650 (1988) , “Electrical Detection of Nuclear Magnetic Resonance in GaAs-AlxGa1-xAs Heterostructures”, M. Dobers, K. v. Klitzing, J. Schneider, G. Weimann, K. PloogThe experimental investigation of the electron spin resonance in the two-dimensional electron gas of GaAs-AlxGa1-xAs heterostructures via the ESR-induced change of magnetoresistivity reveals hysteresis and long-persisting memory effects. We have been able to prove the nuclear... (Read more)
- 172. Phys. Rev. Lett. 60, 2187 (1988) , “Metastability of the Isolated Arsenic-Antisite Defect in GaAs”, D. J. Chadi and K. J. ChangWe propose that a neutral As-antisite defect in GaAs has a stable fourfold and a metastable, threefold interstitial configuration differing by 0.24 eV in their energies. The barrier height from the metastable to the normal state is calculated to be 0.34 eV. The metastable geometry is predicted to... (Read more)
- 173. Phys. Rev. Lett. 60, 2183 (1988) , “Theoretical Evidence for an Optically Inducible Structural Transition of the Isolated As Antisite in GaAs: Identification and Explanation of EL2?”, Jaroslaw Dabrowski, Matthias SchefflerWe performed parameter-free, self-consistent calculations of the electronic structures, total energies, and forces of the As antisite, of an As-interstitial-Ga-vacancy defect pair, and of various configurations between these limits. The total-energy surface exhibits an interesting metastability. The... (Read more)
- 174. Sov. Phys. Semicond. 22, 408 (1988) , “Electron spin resonance of bound holes in GaAs:Mn”, V. F. Masterov, K. F. Shtel'makh, M. N. Barbashov
- 175. J. Appl. Phys. 62, 4786 (1987) , “The capture barrier of the DX center in Si-doped AlxGa1–xAs”, P. M. Mooney, N. S. Caswell, and S. L. WrightWe report measurements of the capture barrier for the DX center in Si-doped AlxGa1xAs as a function of the alloy composition. A model of the capture process which requires a distribution of capture barrier heights has been fit to the data for... (Read more)
- 176. J. Vac. Sci. Technol. B 5, 762 (1987) , “Observation of optically detected magnetic resonance signals in AlxGa1–xAs”, M. G. Spencer, T. A. Kennedy, R. Magno, J. GriffinOptically detected magnetic resonance (ODMR) techniques which utilize weak spin effects on deep photoluminescence have been applied to MBE AlxGa1xAs. ODMR [unlike conventional electron paramagnetic resonance (EPR)] experiments is ideally suited for thin... (Read more)
- 177. Jpn. J. Appl. Phys. 26, L273 (1987) , “Determination of Al Composition and DLTS Measurements of AlxGa1-xSb on GaSb Substrate”, Yoshikazu Takeda, Xiao Cheng Gong, Yu Zhu, Akio SasakiDLTS (Deep Level Transient Spectroscopy) measurements have been carried out to investigate the electron-trap levels in Te-doped AlxGa1-xSb over a composition range from 0 to 0.4. Deep electron-traps were not detected in Te-doped n-type GaSb and AlGaSb with Al... (Read more)
- 178. Nucl. Instrum. Methods Phys. Res. 22, 553-555 (1987) , “Ion channeling study of damage in neutron irradiated GaAs”, K. Kuriyama, M. Satoh, M. Yahagi, K. Iwamura, C. Kim, T. Kawakubo, K. Yoneda and I. KimuraThe lattice disorder in GaAs produced by fast neutrons with a fluence of 7 × 1017 n cm−2 has been investigated with 1.5-MeV 4He+ channeling and electron spin resonance (ESR) measurements. The slight change in the 100-aligned yield for irradiated crystals indicates that each primary... (Read more)
- 179. Phys. Rev. B 36, 7726 (1987) , “Photoresponse of the FR3 electron-spin-resonance signal in GaAs”, U. Kaufmann, W. Wilkening, and M. BaeumlerThe photoresponse of the FR3 electron-spin-resonance (ESR) signal in GaAs has been studied. Excitation and quenching of the FR3 ESR is shown to result from the optically induced charge exchange between the FR3 center and the AsGa antisite. The FR3 ESR can be persistently excited with... (Read more)
- 180. Phys. Rev. B 36, 5982 (1987) , “Temperature dependence of hyperfine coupling of the anion antisite in III-V compounds”, A. Mauger, H. J. von Bardeleben, J. C. Bourgoin, M. LannooTemperature-dependent electron-paramagnetic-resonance experiments have been performed on the arsenic antisite defect in electron-irradiated GaAs. The 4.5% decrease of the central hyperfine coupling constant A upon heating from 4 to 250 K is much too large to be attributable to the thermal expansion... (Read more)
- 181. Phys. Rev. B 36, 1332 (1987) , “Arsenic antisite defect AsGa and EL2 in GaAs”, B. K. Meyer, D. M. Hofmann, J. R. Niklas, and J.-M. SpaethThe microscopic structure of the paramagnetic anion antisite defect in semi-insulating GaAs was determined by optically detected electron-nuclear double resonance (ODENDOR). It is an arsenic-antisite–arsenic-interstitial (AsGa-Asi) pair. It is shown, by optically detected ESR... (Read more)
- 182. Phys. Rev. Lett. 60, 2183 (1987) , “Theoretical Evidence for an Optically Inducible Structural Transition of the Isolated As Antisite in GaAs: Identification and Explanation of EL2?”, Jaroslaw Dabrowski, Matthias SchefflerWe performed parameter-free, self-consistent calculations of the electronic structures, total energies, and forces of the As antisite, of an As-interstitial-Ga-vacancy defect pair, and of various configurations between these limits. The total-energy surface exhibits an interesting metastability. The... (Read more)
- 183. Phys. Rev. Lett. 59, 240 (1987) , “Electronic Structure of the Neutral Manganese Acceptor in Gallium Arsenide”, J. Schneider, U. Kaufmann, W. Wilkening, M. Baeumler, F. KöhlA new maganese-related isotropic electron-spin-resonance signal at g=2.77 has been observed in GaAs. It is shown to arise from the neutral Mn acceptor, Mn0. The analysis gives an answer to the longstanding question of whether the structure of Mn0 correponds to the... (Read more)
- 184. Physica B+C 146, 176-186 (1987) , “Lattice relaxations at substitutional impurities in semiconductors”, Matthias SchefflerThe positions of the crystal nuclei in the surrounding of substitutional impurities in Si and GaAs have been calculated using density-functional theory together with the local-density approximation for exchange and correlation and the total-energy gradient approach. These investigations give a... (Read more)
- 185. Semicond. Sci. Technol. 2, 1 (1987) , “A new model of deep donor centres in AlxGa1-xAs”, J. C. M. Henning, J. P. M. AnsemsSpectroscopic investigations of Si-doped AlxGa1-xAs reveal that the deep donor ('DX centre') exhibits an electron-phonon interaction of moderate strength. The Huang-Rhys factor turns out to be 0.5 and the dominant coupling is with the LO1 phonons. These data lead to... (Read more)
- 186. Deep Centers in Semiconductors 399 (1986) , ed. by S. T. Pantelides, Gordon and Breach, New York. , “The Mid-Gap Donor Level EL2 in Gallium Arsenide”, G. M. Martin, S. Makram-Ebeid
- 187. Appl. Phys. Lett. 48, 1282 (1986) , “Photoresponse of the EL2 absorption in undoped semi-insulating GaAs”, B. Dischler, F. Fuchs, and U. KaufmannThe response of the EL2 absorption band to monochromatic secondary illumination has been studied in undoped semi-insulating GaAs. Photoinduced changes of the absorption band are spectrally nonuniform. In... (Read more)
- 188. Phys. Rev. B 34, 7192 (1986) , “Identification of a defect in a semiconductor: EL2 in GaAs”, H. J. von Bardeleben, D. Stiévenard, D. Deresmes, A. Huber, J. C. BourgoinWe present here a complete set of experimental results, obtained by electron paramagnetic resonance (EPR) and deep-level transient spectroscopy (DLTS), on the so-called EL2 defect in GaAs. It is obtained on semi-insulating materials and specially doped materials grown as semi-insulating ones, which... (Read more)
- 189. Phys. Rev. B 34, 1360 (1986) , “Identification of the arsenic-antisite-arsenic-vacancy complex in electron-irradiated GaAs”, H. J. von Bardeleben, J. C. Bourgoin, and A. MiretWe report the observation by electron paramagnetic resonance of a new irradiation-induced defect in n-type GaAs. It is characterized by the spin Hamiltonian parameters S=1 / 2, g=1.97±0.06, A=0.068±0.004 cm-1, I=3 / 2 (100%) and attributed to the complex formed by an... (Read more)
- 190. Phys. Rev. B 33, 5880 (1986) , “Antisite-related defects in plastically deformed GaAs”, P. Omling, E. R. Weber, L. SamuelsonOptical absorption measurements on plastically deformed GaAs show that the total extrinsic absorption increases with deformation, while the quenchable EL2 absorption stays constant. The nonquenchable extrinsic absorption is observed to be proportional to the EPR measured AsGa containing... (Read more)
- 191. Phys. Rev. B 33, 4320 (1986) , “DX center: Crossover of deep and shallow states in Si-doped AlxGa1-xAs”, Atsushi Oshiyama, Shuhei OhnishiA new microscopic model for the origin of the DX center in Si-doped AlxGa1-xAs is proposed based on discrete variational X? cluster calculations. The calculated level structure shows that the antibonding A1 state of Si, which lies in the conduction bands as a... (Read more)
- 192. Phys. Rev. B 33, 2890 (1986) , “Identification of the arsenic vacancy defect in electron-irradiated GaAs”, H. J. von Bardeleben and J. C. BourgoinWe report the systematic observation of a new electron-paramagnetic-resonance spectrum in a wide series of electron-irradiated GaAs crystals. The spectrum consists of a partially resolved multiplet of 700-G linewidth and an effective g factor of 2.00 for B∥[001] and 2.04 for B∥[110]. Comparison... (Read more)
- 193. Solid State Commun. 60, 871-872 (1986) , “The formation of arsenic antisite defects during plastic deformation of GaAs”, E. R. WeberThe electron paramagnetic resonance (EPR) signal of arsenic antisite defects increases after plastic deformation of GaAs. This has been attributed in the preceeding paper to the formation of only compensating acceptors rather than additional antisites. A critical discussion of this alternative model... (Read more)
- 194. Solid State Commun. 60, 867-870 (1986) , “Antisite defects in plastically-deformed GaAs: An alternative analysis”, R. BrayA revision is presented of the accepted view that the observed increease in electron paramagnetic resonance (EPR) with plastic deformation in GaAs is due to the generation of As antisite defects. It is proposed instead that only compensating deep acceptor defects are generated. The increase of the... (Read more)
- 195. Superlatt. Microstruct. 2, 273-278 (1986) , “Electron states in GaAs/Ga1−xAlxAs heterostructures: Subband Landau-levels*1”, G. Lommer, F. Malcher and U. RösslerNonparabolicities (3,4) of the bulk band structure are taken into account in the calculation of subband Landau-levels in the n-inversion layer of GaAs/Ga1−xAlxAs heterostructures. We calculate the deviation of the cyclotron mass from the isotropic parabolic band case (2) for magnetic fields... (Read more)
- 196. Appl. Phys. Lett. 47, 970 (1985) , “Identification of EL2 in GaAs”, H. J. von Bardeleben, D. Stievenard, J. C. Bourgoin, A. HuberCombining electron paramagnetic resonance under optical excitation, deep level transient spectroscopy, electron irradiation, annealing, and quenching on LEC semi-insulating GaAs and lightly Si-doped material grown in the same way as the semi-insulating material, we have shown that (i) the irradiated... (Read more)
- 197. Appl. Phys. Lett. 46, 781 (1985) , “Photoresponse of the AsGa antisite defect in as-grown GaAs”, M. Baeumler, U. Kaufmann, and J. WindscheifThe photoresponse of the As + Ga" align="middle"> antisite electron-paramagnetic-resonance (EPR) has been studied in as-grown semi-insulating GaAs as a function of illumination time and photon energy h. The As + Ga" align="middle"> EPR signal intensity... (Read more)
- 198. J. Appl. Phys. 58, 3996 (1985) , “Catastrophic degradation of InGaAsP/InGaP double-heterostructure lasers grown on (001) GaAs substrates by liquid-phase epitaxy”, Osamu Ueda, Kiyohide Wakao, Satoshi Komiya, Akio Yamaguchi, Shoji Isozumi, and Itsuo UmebuCatastrophically degraded InGaAsP/InGaP double-heterostructure lasers grown on (001) GaAs substrates by liquid-phase epitaxy, emitting at 727 and 810 nm are investigated by photoluminescence topography, scanning electron microscopy, transmission electron microscopy, and energy dispersive x-ray... (Read more)
- 199. J. Appl. Phys. 58, 2448 (1985) , “Thermal strain-induced degradation mechanism in the visible AlGaAs/GaAs laser”, M. Ikeda, O. Ueda, S. Komiya, and I. UmebuWe fabricated and life-tested visible AlGaAs/GaAs channeled-substrate-planar-type lasers and found that some are degraded within 100 h of operation. We investigated these using photoluminescence and transmission electron microscopic images. The characteristic features in photoluminescence images are... (Read more)
- 200. J. Appl. Phys. 57, 1523 (1985) , “Defect structures in rapidly degraded InGaAsP/InGaP double-heterostructure lasers”, Osamu Ueda, Kiyohide Wakao, Akio Yamaguchi, Shoji Isozumi, and Satoshi KomiyaRapidly degraded InGaAsP/InGaP double-heterostructure lasers grown on (001)-oriented GaAs substrates by liquid phase epitaxy have been investigated by photoluminescence topography and transmission electron microscopy. 100" align="middle">-dark-line defects and 110" align="middle">-dark-line defects... (Read more)
Showing
10, 25, 50, 100, 500, 1000, all papers per page.
Sort by:
last publication date,
older publication date,
last update date.
All papers (3399)
Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
(view as: tree
,
cloud
)
1329 | untagged |
Materials
(111 tags)
Others(101 tags)
Technique
(46 tags)
Details
(591 tags)
Bond(35 tags)
Defect(interstitial)(18 tags)
Defect(vacancy)(15 tags)
Defect-type(19 tags)
Element(65 tags)
Energy(8 tags)
Isotope(56 tags)
Label(303 tags)
Sample(17 tags)
Spin(8 tags)
Symmetry(15 tags)