Papers - tagged 'thermal-meas./anneal-exp.' - Defect dat@base
http://esrlab.jp/div-media/defect/index.php?q=&material=&method=thermal-meas.%2Fanneal-exp.&defect=&sb=u
Papers - Defect dat@base2010-06-14T17:59:23+09:00NBTI degradation: From physical mechanisms to modelling
http://dx.doi.org/10.1016/j.microrel.2005.02.001
, Microelectron. Reliability 46, 1 (2006) 2010-06-14T17:59:23+09:00Evaluation of NBTI in HfO2 Gate-Dielectric Stacks With Tungsten Gates
http://esrlab.jp/div-media/defect/index.php?q=&material=&method=thermal-meas.%2Fanneal-exp.&defect=&sb=u&id=4551#4551
, IEEE Electron Device Lett. 25, 153 (2004) 2010-06-14T17:53:11+09:00Relationship between interfacial nitrogen concentration and activation energies of fixed-charge trapping and interface state generation under bias-temperature stress condition
http://dx.doi.org/10.1063/1.1537053
, Appl. Phys. Lett. 82, 269 (2003) 2010-06-14T17:48:09+09:00Dynamic recovery of negative bias temperature instability in p-type metal–oxide–semiconductor field-effect transistors
http://dx.doi.org/10.1063/1.1604480
, Appl. Phys. Lett. 83, 1647 (2003) 2010-06-14T17:43:26+09:00A comprehensive model of PMOS NBTI degradation
http://dx.doi.org/10.1016/j.microrel.2004.03.019
, Microelectron. Reliability 45, 71 (2005) 2010-06-14T17:37:27+09:00Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing
http://dx.doi.org/10.1063/1.1567461
, J. Appl. Phys. 94, 1 (2003) 2010-06-14T17:31:36+09:00The effect of interfacial layer properties on the performance of Hf-based gate stack devices
http://dx.doi.org/10.1063/1.2362905
G. Bersuker, C. S. Park, J. Barnett, P. S. Lysaght, P. D. Kirsch, C. D. Young, R. Choi, B. H. Lee, B. Foran, K. van Benthem, S. J. Pennycook, P. M. Lenahan, and J. T. Ryan, J. Appl. Phys. 100, 094108 (2006) 2010-06-14T17:19:46+09:00Hydrogen redistribution induced by negative-bias-temperature stress in metal–oxide–silicon diodes
http://dx.doi.org/10.1063/1.1508809
Ziyuan Liu, Appl. Phys. Lett. 81, 2397-2399 (2002) 2010-06-14T17:02:53+09:00Do Pb1 centers have levels in the Si band gap? Spin-dependent recombination study of the Pb1 "hyperfine spectrum"
http://dx.doi.org/10.1063/1.126776
Tetsuya D. Mishima and Patrick M. Lenahan, Appl. Phys. Lett. 76, 3771-3773 (2000) 2010-06-14T16:59:56+09:00Density of states of Pb1 Si/SiO2 interface trap centers
http://dx.doi.org/10.1063/1.1461053
J. P. Campbell and P. M. Lenahan, Appl. Phys. Lett. 80, 1945-1947 (2002) 2010-06-14T16:57:34+09:00Direct observation of the structure of defect centers involved in the negative bias temperature instability
http://dx.doi.org/10.1063/1.2131197
J. P. Campbell and P. M. Lenahan, Appl. Phys. Lett. 87, 204106 (2005) 2010-06-14T16:55:05+09:00Observation of negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination
http://dx.doi.org/10.1063/1.2715141
, Appl. Phys. Lett. 90, 123502 (2007) 2010-06-14T16:47:29+09:00Identification of atomic-scale defect structure involved in the negative bias temperature instability in plasma-nitrided devices
http://dx.doi.org/10.1063/1.2790776
J. P. Campbell, P. M. Lenahan, A. T. Krishnan, and S. Krishnan, Appl. Phys. Lett. 91, 133507 (2007) 2010-06-14T16:37:32+09:00Nitridation effects on Pb center structures at SiO2/Si(100) interfaces
http://dx.doi.org/10.1063/1.1687034
, J. Appl. Phys. 95, 4096 (2004) 2010-06-14T16:26:18+09:00Characterization of interface defects related to negative-bias temperature instability SiON/Si<100> systems
http://dx.doi.org//j.microrel.2004.02.017
, Microelectron. Reliability 45, 57 (2005) 2010-06-14T16:05:58+09:00Spin-Dependent Trap-Assisted Tunneling Current in Ultra-Thin Gate Dielectrics
http://dx.doi.org/10.1143/JJAP.40.2840
, Jpn. J. Appl. Phys. 40, 2840 (2001) 2010-06-14T15:52:34+09:00Interface defects responsible for negative-bias temperature instability in plasma-nitrided SiON/Si(100) systems
http://dx.doi.org/10.1063/1.1578535
Shinji Fujieda, Yoshinao Miura, and Motofumi Saitoh, Appl. Phys. Lett. 82, 3677-3679 (2003) 2010-06-14T15:41:46+09:00Enhanced Ferromagnetism and Tunable Saturation Magnetization of Mn/C Codoped GaN Nanostructures Synthesized by Carbothermal Nitridation
http://dx.doi.org/10.1021/ja807030v
Zeyan Wang, Baibiao Huang, Lin Yu, Ying Dai, Peng Wang, Xiaoyan Qin, Xiaoyang Zhang, Jiyong Wei, Jie Zhan, Xiangyang Jing, Haixia Liu, and Myung-Hwan Whangbo, J.Am.Chem.Soc. 130, 48 (2008) , ACS2010-02-21T18:19:06+09:00Dynamic Interchange among Three States of Phosphorus (4+) in ?-Quartz. 2.
http://dx.doi.org/10.1021/j150666a029
Y. Uchida, J. Isoya, J. A. Weil, J. Phys. Chem. 88, 5255-5260 (1984) 2010-02-14T16:14:29+09:00Fluorine in Si: Native-defect complexes and the supression of impurity diffusion
http://dx.doi.org/10.1103/PhysRevB.72.045219
Giorgia M. Lopez, Vincenzo Fiorentini, Giuliana Impellizzeri, Salvatore Mirabella, Enrico Napolitani, Phys. Rev. B 72, 045219 (2005) 2010-01-25T16:24:22+09:00An EPR study on a new triclinic symmetry defect in neutron-irradiated FZ-silicon
http://dx.doi.org/10.1016/0038-1098(87)90030-5
Wu En, Wu Shu-xian, Mao Jin-Chang, Yan Mao-Xun, Qin Guo-gang, Solid State Commun. 61, 199-202 (1987) 2010-01-25T15:47:17+09:00Identification of the Carbon Antisite-Vacancy Pair in 4H-SiC
http://dx.doi.org/10.1103/PhysRevLett.96.145501
T. Umeda, N. T. Son, J. Isoya, E. Janzn, T. Ohshima, N. Morishita, H. Itoh, A. Gali, M. Bockstedte, Phys. Rev. Lett. 96, 145501 (2006) 2010-01-18T17:38:37+09:00Fluorine in Silicon: Diffusion, Trapping, and Precipitation
http://dx.doi.org/10.1103/PhysRevLett.90.155901
X. D. Pi, C. P. Burrows, P. G. Coleman, Phys. Rev. Lett. 90, 155901 (2003) 2010-01-18T16:38:27+09:00Dynamic Interchange among Three States of Phousphorus 4+ in ?-Quartz
http://dx.doi.org/10.1021/j100489a030
Y. Uchida, J. Isoya, J. A. Weil, J. Phys. Chem. 83, 3462-3467 (1979) 2010-01-18T15:44:34+09:00Electron paramagnetic resonance of hydrogen in silicon
http://dx.doi.org/10.1016/0921-4526(91)90119-Y
Yu.V. Gorelkinskii, N.N. Nevinnyi, Physica B 170, 155-167 (1991) 2010-01-18T14:59:37+09:00Investigations of well defined dislocations in silicon
http://dx.doi.org/10.1016/0378-4363(83)90311-X
H. Alexander, C. Kisielowski-Kemmerich, E. R. Weber, Physica B 116, 583-593 (1983) 2010-01-18T14:43:38+09:00EPR Observation of the Isolated Interstitial Carbon Atom in Silicon
http://dx.doi.org/10.1103/PhysRevLett.36.1329
G. D. Watkins and K. L. Brower, Phys. Rev. Lett. 36, 1329 (1976) 2009-11-26T12:06:27+09:00EPR of a Jahn-Teller distorted (111) carbon interstitialcy in irradiated silicon
http://dx.doi.org/10.1103/PhysRevB.9.2607
K. L. Brower., Phys. Rev. B 9, 2607 (1974) 2009-11-26T12:05:46+09:00EPR of a <001> Si interstitial complex in irradiated silicon
http://dx.doi.org/10.1103/PhysRevB.14.872
K. L. Brower., Phys. Rev. B 14, 872-883 (1976) 2009-11-26T10:59:49+09:00EPR Studies of the Lattice Vacancy and Low-Temperature Damage Processes in Silocon
http://esrlab.jp/div-media/defect/index.php?q=&material=&method=thermal-meas.%2Fanneal-exp.&defect=&sb=u&id=1912#1912
G. D. Watkins., Lattice Defects in Semiconductors 23, 1-22 (1975) , Institute of Physics, London2009-11-26T10:56:15+09:00EPR study of neutron-irradiated silicon: A positive charge state of the <100> split di-interstitial
http://dx.doi.org/10.1103/PhysRevB.14.4506
Young-Hoon Lee, Nikolai N. Gerasimenko, and James W. Corbett, Phys. Rev. B 14, 4506 (1976) 2009-11-26T10:39:48+09:00The Annealing of the EPR-Signal Produced in Silicon by Plastic Deformation
http://dx.doi.org/10.1016/0022-3697(70)90142-3
F. D. Wohler and H. AlexanderW. Sander, J. Phys. Chem. Solids 31, 1381 (1970) 2009-11-19T11:44:19+09:00Electrical Properties of Dislocations and Point Defects in Plastically Deformed Silicon
http://dx.doi.org/10.1103/PhysRevB.32.6571
P. Omling, E. R. Weber, L. Montelius, H. Alexander, J. Michel., Phys. Rev. B 32, 6571 (1985) 2009-11-18T19:17:23+09:00Electron Paramagnetic Resonance in Plastically Deformed Silicon
http://esrlab.jp/div-media/defect/index.php?q=&material=&method=thermal-meas.%2Fanneal-exp.&defect=&sb=u&id=1952#1952
V. A. Grazhulis, Yu. A. Osipyan., Sov. Phys. JETP 31, 677-679 (1970) 2009-11-18T19:14:43+09:00Self-Interstitials in Silicon Irradiated with Light Ions
http://dx.doi.org/10.1002/(SICI)1521-396X(199807)168:1<73::AID-PSSA73>3.0.CO;2-5
B. N. Mukashev, Kh. A. Abdullin, Yu. V. Gorelkinskii., phys. stat. sol. (a) 168, 73 (1998) 2009-11-18T19:05:25+09:00Metastable oxygen - silicon interstitial complex in crystalline silicon
http://dx.doi.org/10.1088/0268-1242/11/11/010
Kh. A. Abdullin, B. N. Mukashev, Yu. V. Gorelkinskii., Semicond. Sci. Technol. 11, 1696-1703 (1996) 2009-11-18T19:01:57+09:00Self-Interstitial Related Reactions in Silicon Irradiated by Light Ions
http://dx.doi.org/10.1016/S0921-5107(98)00296-7
B. N. Mukashev, Kh. A. Abdullin, Yu. V. Gorelkinskii and S. Zh. Tokmoldin, Mater. Sci. Eng. B 58, 171-178 (1999) 2009-11-18T18:59:10+09:00New Oxygen-Related EPR Spectra in Proton-Irradiated Silicon
http://dx.doi.org/10.1016/0921-5107(95)01304-0
Kh. A. Abdullin, B. N. Mukashev, A. M. Makhov and Yu. V. Gorelkinskii, Mater. Sci. Eng. B 36, 77 (1996) 2009-11-18T18:54:57+09:00EPR of a Trapped Vacancy in Boron-Doped Silicon
http://dx.doi.org/10.1103/PhysRevB.13.2511
G. D. Watkins., Phys. Rev. B 13, 2511 (1976) 2009-11-18T18:42:55+09:00EPR study of defects in neutron-irradiated silicon: Quenched-in alignment under <110>-uniaxial stress
http://dx.doi.org/10.1103/PhysRevB.9.4351
Young-Hoon Lee and James W. Corbett, Phys. Rev. B 9, 4351-4361 (1974) 2009-11-09T15:25:52+09:00Identification of the Silicon Vacancy Containing a Single Hydrogen Atom by EPR
http://prola.aps.org/abstract/PRL/v79/i8/p1507_1
B. Bech Nielsen, P. Johannesen, P. Stallinga, K. Bonde Nielsen, Phys. Rev. Lett. 79, 1507 (1997) 2009-10-28T19:10:20+09:00Solubility and Diffusion Coefficient of Oxygen in Silicon
http://dx.doi.org/10.1143/JJAP.24.279
Yoshiko Itoh and Tadashi Nozaki , Jpn. J. Appl. Phys. 24, 279 (1985) 2009-10-28T19:03:42+09:00Carbon-Induced Rapid Annihilation of Thermal Double Donors in Czochralski Silicon Studied by Infrared Absorption Spectroscopy
http://dx.doi.org/10.1143/JJAP.32.L1715
Yoichi Kamiura*1, Yutaka Uno*2 and Fumio Hashimoto , Jpn. J. Appl. Phys. 32, L1715 (1993) 2009-10-28T19:02:18+09:00Electron Paramagnetic Resonance Study of Hydrogen-Vacancy Defects in Crystalline Silicon
http://dx.doi.org/10.1103/PhysRevB.58.3842
P. Stallinga, P. Johannesen, S. Herstm, K. Bonde Nielsen, B. Bech Nielsen, J. R. Byberg., Phys. Rev. B 58, 3842 (1998) 2009-10-26T19:47:55+09:00Transition Metals in Silicon
http://dx.doi.org/10.1007/BF00617708
E. R. Weber., Appl. Phys. A 30, 1 (1983) 2009-08-19T14:10:23+09:00Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I
http://dx.doi.org/10.1143/JJAP.10.52
Y. Nishi, Jpn. J. Appl. Phys. 10, 52-62 (1971) 2008-09-29T12:57:52+09:00EPR identification of intrinsic defects in SiC
http://dx.doi.org/10.1002/pssb.200844209
J. Isoya, T. Umeda, N. Mizuochi, N. T. Son, E. Janzen, T. Ohshima, phys. stat. sol. (b) 245, 1298-1314 (2008) 2008-06-23T10:40:32+09:00Comprehensive characterization of hydride VPE grown GaN layers and templates
http://dx.doi.org/10.1016/S0927-796X(01)00031-6
H. Morkoç, Mater. Sci. Eng. R 33, 135-207 (2001) 2008-05-29T11:09:04+09:00Electronic states associated with dislocations in p-type silicon studied by means of electric-dipole spin resonance and Deep-Level Transient Spectroscopy
http://dx.doi.org/10.1103/PhysRevB.51.16721
V. Kveder, T. Sekiguchi, K. Sumino., Phys. Rev. B 51, 16721 (1995) 2008-05-23T12:31:33+09:00Identification of positively charged carbon antisite-vacancy pairs in 4H-SiC
http://dx.doi.org/10.1103/PhysRevB.75.245202
T. Umeda, J. Ishoya, T. Ohshima, N. Morishita, H. Itoh, and A. Gali, Phys. Rev. B 75, 245202 (2007) 2008-05-22T00:06:02+09:00