Papers - tagged 'stress/pressure_effects' - Defect dat@base
http://esrlab.jp/div-media/defect/index.php?q=&material=&method=stress%2Fpressure_effects&defect=&sb=u
Papers - Defect dat@base2009-11-26T12:14:16+09:00Optical Detection of Magnetic Resonance for a Deep-Level Defect in Silicon
http://dx.doi.org/10.1103/PhysRevLett.48.37
K. M. Lee, K. P. O'Donnell, J. Weber, B. C. Cavenett, and G. D. Watkins, Phys. Rev. Lett. 48, 37 (1982) 2009-11-26T12:14:16+09:00EPR of a Jahn-Teller distorted (111) carbon interstitialcy in irradiated silicon
http://dx.doi.org/10.1103/PhysRevB.9.2607
K. L. Brower., Phys. Rev. B 9, 2607 (1974) 2009-11-26T12:05:46+09:00Bistable interstitial-carbonsubstitutional-carbon pair in silicon
http://dx.doi.org/10.1103/PhysRevB.42.5765
L. W. Song, X. D. Zhan, B. W. Benson, and G. D. Watkins, Phys. Rev. B 42, 5765 (1990) 2009-11-26T11:37:01+09:00EPR study of neutron-irradiated silicon: A positive charge state of the <100> split di-interstitial
http://dx.doi.org/10.1103/PhysRevB.14.4506
Young-Hoon Lee, Nikolai N. Gerasimenko, and James W. Corbett, Phys. Rev. B 14, 4506 (1976) 2009-11-26T10:39:48+09:00Electron paramagnetic resonance of multistable interstitial-carbonsubstitutional-group-V-atom pairs in silicon
http://dx.doi.org/10.1103/PhysRevB.47.6363
X. D. Zhan, G. D. Watkins, Phys. Rev. B 47, 6363-6380 (1993) 2009-11-19T11:55:56+09:00EPR study of defects in neutron-irradiated silicon: Quenched-in alignment under <110>-uniaxial stress
http://dx.doi.org/10.1103/PhysRevB.9.4351
Young-Hoon Lee and James W. Corbett, Phys. Rev. B 9, 4351-4361 (1974) 2009-11-09T15:25:52+09:00Measurement of process-induced defects in Si sub-micron devices by combination of EDMR and TEM
http://dx.doi.org/10.1051/epjap:2004123
T. Umeda, A. Toda, Y. Mochizuki, Eur. Phys. J. Appl. Phys. 27, 13-19 (2004) 2009-10-21T14:53:28+09:00Electronic states associated with dislocations in p-type silicon studied by means of electric-dipole spin resonance and Deep-Level Transient Spectroscopy
http://dx.doi.org/10.1103/PhysRevB.51.16721
V. Kveder, T. Sekiguchi, K. Sumino., Phys. Rev. B 51, 16721 (1995) 2008-05-23T12:31:33+09:00Mechanical strength and coordination defects in compressed silica glass: Molecular dynamics simulations
http://dx.doi.org/10.1103/PhysRevB.75.024205
Yunfeng Liang, Caetano R. Miranda, and Sandro Scandolo, Phys. Rev. B 75, 024205 (2007) 2007-06-25T19:40:52+09:00Microcrack-induced strain relief in GaN/AlN quantum dots grown on Si(111)
http://dx.doi.org/10.1103/PhysRevB.75.075306
G. Sarusi, O. Moshe, S. Khatsevich, D. H. Rich, and B. Damilano, Phys. Rev. B 75, 075306 (2007) 2007-06-18T12:04:27+09:00Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network
http://dx.doi.org/10.1063/1.2363233
V. Lebedev, V. Cimalla, J. Pezoldt, M. Himmerlich, S. Krischok, J. A. Schaefer, O. Ambacher, F. M. Morales, J. G. Lozano, and D. González, J. Appl. Phys. 100, 094902 (2006) 2006-12-14T16:07:59+09:00Phosphorus Donors in Highly Strained Silicon
http://dx.doi.org/10.1103/PhysRevLett.97.166402
Hans Huebl, Andre R. Stegner, Martin Stutzmann, Martin S. Brandt, Guenther Vogg, Frank Bensch, Eva Rauls, and Uwe Gerstmann, Phys. Rev. Lett. 97, 166402 (2006) 2006-12-07T13:08:09+09:00Stress dependence of the near-band-gap cathodoluminescence spectrum of GaN determined by spatially resolved indentation method
http://dx.doi.org/10.1063/1.2360152
Alessandro Alan Porporati, Yoshitomo Tanaka, Atsuo Matsutani, Wenliang Zhu, and Giuseppe Pezzotti, J. Appl. Phys. 100, 083515 (2006) 2006-11-16T14:19:14+09:00Hydrogen Motion in Defect Complexes: Reorientation Kinetics of the B-H Complex in Silicon
http://dx.doi.org/10.1103/PhysRevLett.61.2786
Michael Stavola, K. Bergman, S. J. Pearton, and J. Lopata, Phys. Rev. Lett. 61, 2786 (1988) 2006-11-13T08:06:16+09:00Non-Arrhenius Reorientation Kinetics for the B-H Complex in Si: Evidence for Thermally Assisted Tunneling
http://dx.doi.org/10.1103/PhysRevLett.73.3419
Y. Michael Cheng and Michael Stavola, Phys. Rev. Lett. 73, 3419 (1994) 2006-11-13T07:48:29+09:00Depth profiling of strain and defects in Si/Si1–xGex/Si heterostructures by micro-Raman imaging
http://dx.doi.org/10.1063/1.2355431
T. Mitani, S. Nakashima, H. Okumura, and A. Ogura, J. Appl. Phys. 100, 073511 (2006) 2006-11-09T17:49:06+09:00Photoluminescence of wurtzite ZnO under hydrostatic pressure
http://dx.doi.org/10.1063/1.2177928
S. J. Chen, Y. C. Liu, C. L. Shao, C. S. Xu, Y. X. Liu, L. Wang, B. B. Liu, and G. T. Zou, J. Appl. Phys. 99, 066102 (2006) 2006-10-19T21:52:10+09:00An x-ray topographic study of diamond anvils: Correlation between defects and helium diffusion
http://dx.doi.org/10.1063/1.2197265
Agnès Dewaele, Paul Loubeyre, and Ramesh André, J. Appl. Phys. 99, 104906 (2006) 2006-10-19T21:27:05+09:00Electrical activity of the PtH2 complex in silicon: High-resolution Laplace deep-level transient spectroscopy and uniaxial-stress technique
http://dx.doi.org/10.1103/PhysRevB.73.195209
Vl. Kolkovsky, O. Andersen, L. Dobaczewski, A. R. Peaker, and K. Bonde Nielsen, Phys. Rev. B 73, 195209 (2006) 2006-08-24T15:41:17+09:00Stress dependence of F+-center cathodoluminescence of sapphire
http://dx.doi.org/10.1063/1.2234307
Giuseppe Pezzotti, Keshu Wan, Maria Chiara Munisso, and Wenliang Zhu, Appl. Phys. Lett. 89, 041908 (2006) 2006-08-24T10:50:24+09:00Demonstration of the effect of uniaxial stress on the electronic structure of bond-centered muonium in Si
http://dx.doi.org/10.1103/PhysRevB.73.113202
K. H. Chow, B. Hitti, and J. S. Lord, Phys. Rev. B 73, 113202 (2006) 2006-08-10T14:41:31+09:00Comparison of Electronic Structure and Properties of Hydrogen-Associated and Thermal Double Donors in Silicon
http://dx.doi.org/10.1016/S0921-5107(99)00387-6
S. Zh. Tokmoldin, B. N. Mukashev, Kh. A. Abdullin, Yu. V. Gorelkinskii and B. Pajot, Mater. Sci. Eng. B 71, 263 (2000) 2006-03-17T02:32:07+09:00Electron Spin Resonance Experiments on Donors in Silicon. III. Investigation of Excited States by the Application of Uniaxial Stress and Their Importance in Relaxation Processes
http://dx.doi.org/10.1103/PhysRev.124.1068
D. K. Wilson, G. Feher., Phys. Rev. 124, 1068 (1961) 2006-03-16T19:13:06+09:00