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- 1. Phys. Rev. B 75, 035309 (2007) , “Role of hydrogen in hydrogen-induced layer exfoliation of germanium”, J. M. Zahler, A. Fontcuberta i Morral, M. J. Griggs, Harry A. Atwater, and Y. J. ChabalThe role of hydrogen in the exfoliation of Ge is studied using cross-sectional transmission electron microscopy, atomic force microscopy, and multiple-internal transmission mode Fourier-transform infrared absorption spectroscopy and compared with the mechanism in silicon. A qualitative model for the... (Read more)
- 2. Appl. Phys. Lett. 89, 151918 (2006) , “Competition between damage buildup and dynamic annealing in ion implantation into Ge”, M. Posselt, L. Bischoff, D. Grambole, and F. HerrmannChanneling implantation of Ga into Ge is performed at two very different ion fluxes (1012 and 1019 cm2 s1), at two temperatures (room temperature and 250 °C), and at five different fluences. The fluence dependence of the range profiles... (Read more)
- 3. Appl. Phys. Lett. 89, 152123 (2006) , “Electrical characterization of defects introduced in n-type Ge during indium implantation”, F. D. Auret, P. J. Janse van Rensburg, M. Hayes, J. M. Nel, W. E. Meyer, S. Decoster, V. Matias, and A. VantommeThe authors have employed deep level transient spectroscopy to investigate the defects introduced in n-type Ge during 160 keV indium (In) ion implantation. Our results show that In implantation introduces three prominent electron traps with energy levels at... (Read more)
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Updated at 2010-07-20 16:50:39
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