Papers - tagged 'gamma-irradiation' - Defect dat@base
http://esrlab.jp/div-media/defect/index.php?q=&material=&method=gamma-irradiation&defect=&sb=u
Papers - Defect dat@base2007-04-05T14:48:41+09:00Midgap luminescence centers in single-wall carbon nanotubes created by ultraviolet illumination
http://dx.doi.org/10.1063/1.2364157
Konstantin Iakoubovskii, Nobutsugu Minami, Yeji Kim, Kanae Miyashita, Said Kazaoui, and Balakrishnan Nalini, Appl. Phys. Lett. 89, 173108 (2006) 2007-04-05T14:48:41+09:00Bleaching of peroxy radical in SiO2 glass with 5 eV light*1
http://dx.doi.org/10.1016/0022-3093(90)90705-Q
H. Hosono, R. A. Weeks, J. Non-Cryst. Solids 116, 289-292 (1990) 2006-11-10T14:50:27+09:00Selective Generation of Oriented Defects in Glasses: Application to SiO2
http://dx.doi.org/10.1103/PhysRevLett.58.1448
J. H. Stathis, Phys. Rev. Lett. 58, 1448 (1987) 2006-11-10T14:38:08+09:00Charge-trapping defects in Cat-CVD silicon nitride films
http://dx.doi.org/10.1016/S0040-6090(01)01279-2
T. Umeda, Y. Mochizuki, Y. Miyoshi and Y. Nashimoto, Thin Solid Films 395, 266-269 (2001) 2006-11-10T14:11:44+09:00A spin dependent recombination study of radiation induced defects at and near the Si/SiO2 interface
http://esrlab.jp/div-media/defect/index.php?q=&material=&method=gamma-irradiation&defect=&sb=u&id=2298#2298
M. A. Jupina , P. M. Lenahan, IEEE Trans. Nucl. Sci. 36, 1800-1807 (1989) 2006-11-08T12:00:54+09:00Spin dependent recombination: A 29Si hyperfine study of radiation-induced Pb centers at the Si/SiO2 interface
http://esrlab.jp/div-media/defect/index.php?q=&material=&method=gamma-irradiation&defect=&sb=u&id=2288#2288
M. A. Jupina , P. M. Lenahan, IEEE Trans. Nucl. Sci. 37, 1650-1657 (1990) 2006-11-08T12:00:04+09:00Diffusion and Reactions of Hydrogen in F2-Laser-Irradiated SiO2 Glass
http://dx.doi.org/10.1103/PhysRevLett.89.135507
Koichi Kajihara, Linards Skuja, Masahiro Hirano, and Hideo Hosono, Phys. Rev. Lett. 89, 135507 (2002) 2006-11-07T13:34:21+09:00Characterization of S centers generated by thermal degradation in SiO2 on (100)Si
http://dx.doi.org/10.1063/1.1481539
A. Stesmans, B. Nouwen, D. Pierreux, and V. V. Afanas'ev, Appl. Phys. Lett. 80, 4753-4755 (2002) 2006-11-02T16:23:40+09:00What can electron paramagnetic resonance tell us about the Si/SiO2 system?
http://dx.doi.org/10.1116/1.590301
P. M. Lenahan, J. F. Conley, Jr., J. Vac. Sci. Technol. B 16, 2134-2153 (1998) 2006-10-31T18:24:16+09:0029Si Hyperfine Structure of the Eα Center in Amorphous Silicon Dioxide
http://dx.doi.org/10.1103/PhysRevLett.97.135502
G. Buscarino, S. Agnello, and F. M. Gelardi, Phys. Rev. Lett. 97, 135502 (2006) 2006-10-31T18:21:53+09:00Optically active oxygen-deficiency-related centers in amorphous silicon dioxide
http://dx.doi.org/10.1016/S0022-3093(98)00720-0
Linards Skuja, J. Non-Cryst. Solids 239, 16-48 (1998) 2006-10-31T18:09:13+09:00Fundamental radiation-induced defect centers in synthetic fused silicas: Atomic chlorine, delocalized E' centers, and a triplet state
http://dx.doi.org/10.1103/PhysRevB.34.7524
D. L. Griscom and E. J. Friebele, Phys. Rev. B 34, 7524-7533 (1986) 2006-10-31T18:05:43+09:00The many varieties of E′ centers: a review
http://dx.doi.org/10.1016/0022-3093(94)90680-7
Robert A. Weeks, J. Non-Cryst. Solids 179, 1-9 (1994) 2006-10-31T17:48:08+09:00OXYGEN-ASSOCIATED TRAPPED-HOLE CENTERS IN HIGH-PURITY FUSED SILICAS
http://dx.doi.org/10.1016/0022-3093(79)90079-6
M. Stapelbroek, D. L. Griscom, E. J. Friebele and G. H. Sigel, Jr., J. Non-Cryst. Solids 32, 313-326 (1979) 2006-10-31T17:33:25+09:00Electron spin resonance characterization of self-trapped holes in amorphous silicon dioxide
http://dx.doi.org/10.1016/0022-3093(92)90062-O
David L. Griscom, J. Non-Cryst. Solids 149, 137-160 (1992) 2006-10-31T16:55:31+09:00Paramagnetic trivalent silicon centers in gamma irradiated metal-oxide-silicon structures
http://dx.doi.org/10.1063/1.94566
P. M. Lenahan and P. V. Dressendorfer, Appl. Phys. Lett. 44, 96-98 (1984) 2006-10-31T11:43:41+09:00Effect of bias on radiation-induced paramagnetic defects at the silicon-silicon dioxide interface
http://dx.doi.org/10.1063/1.93583
P. M. Lenahan and P. V. Dressendorfer, Appl. Phys. Lett. 41, 542-544 (1982) 2006-10-31T11:33:37+09:00Defects and impurities in thermal oxides on silicon
http://dx.doi.org/10.1063/1.93484
K. L. Brower, P. M. Lenahan, and P. V. Dressendorfer, Appl. Phys. Lett. 41, 251-253 (1982) 2006-10-31T11:31:35+09:00Thermal stability of gamma-irradiation-induced oxygen-deficient centers in silica
http://dx.doi.org/10.1103/PhysRevB.73.115203
S. Agnello and L. Nuccio, Phys. Rev. B 73, 115203 (2006) 2006-10-29T18:41:39+09:00Effects of x-ray irradiation on polycrystalline silicon, thin-film transistors
http://dx.doi.org/10.1063/1.2179149
Yixin Li, Larry E. Antonuk, Youcef El-Mohri, Qihua Zhao, Hong Du, Amit Sawant, and Yi Wang, J. Appl. Phys. 99, 064501 (2006) 2006-10-19T21:47:35+09:00