Papers - tagged 'Theory' - Defect dat@base
http://esrlab.jp/div-media/defect/index.php?q=&material=&method=Theory&defect=&sb=u
Papers - Defect dat@base2010-06-14T17:59:23+09:00NBTI degradation: From physical mechanisms to modelling
http://dx.doi.org/10.1016/j.microrel.2005.02.001
, Microelectron. Reliability 46, 1 (2006) 2010-06-14T17:59:23+09:00A comprehensive model of PMOS NBTI degradation
http://dx.doi.org/10.1016/j.microrel.2004.03.019
, Microelectron. Reliability 45, 71 (2005) 2010-06-14T17:37:27+09:00Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing
http://dx.doi.org/10.1063/1.1567461
, J. Appl. Phys. 94, 1 (2003) 2010-06-14T17:31:36+09:00Enhanced Ferromagnetism and Tunable Saturation Magnetization of Mn/C Codoped GaN Nanostructures Synthesized by Carbothermal Nitridation
http://dx.doi.org/10.1021/ja807030v
Zeyan Wang, Baibiao Huang, Lin Yu, Ying Dai, Peng Wang, Xiaoyan Qin, Xiaoyang Zhang, Jiyong Wei, Jie Zhan, Xiangyang Jing, Haixia Liu, and Myung-Hwan Whangbo, J.Am.Chem.Soc. 130, 48 (2008) , ACS2010-02-21T18:19:06+09:00Fluorine in Si: Native-defect complexes and the supression of impurity diffusion
http://dx.doi.org/10.1103/PhysRevB.72.045219
Giorgia M. Lopez, Vincenzo Fiorentini, Giuliana Impellizzeri, Salvatore Mirabella, Enrico Napolitani, Phys. Rev. B 72, 045219 (2005) 2010-01-25T16:24:22+09:00Reactions of excess hydrogen at a Si(111) surface with H termination: First-principles calculations
http://dx.doi.org/10.1103/PhysRevB.74.113301
L. Tsetseris, S. T. Pantelides, Phys. Rev. B 74, 113301 (2006) 2010-01-25T16:06:12+09:00Identification of the Carbon Antisite-Vacancy Pair in 4H-SiC
http://dx.doi.org/10.1103/PhysRevLett.96.145501
T. Umeda, N. T. Son, J. Isoya, E. Janzn, T. Ohshima, N. Morishita, H. Itoh, A. Gali, M. Bockstedte, Phys. Rev. Lett. 96, 145501 (2006) 2010-01-18T17:38:37+09:00Ab Initio Calculations to Model Anomalous Fluorine Behavior
http://dx.doi.org/10.1103/PhysRevLett.93.245901
Milan Diebel, Scott T. Dunham, Phys. Rev. Lett. 93, 245901 (2004) 2010-01-18T16:53:05+09:00Interface structure between silicon and its oxide by first-principles molecular dynamics
http://dx.doi.org/10.1038/23908
A. Pasquarello, M. S. Hybertsen, R. Car, Nature 396, 58-60 (1998) 2010-01-18T16:16:30+09:00Nonvolatile Memory with Multilevel Switching: A Basic Model
http://dx.doi.org/10.1103/PhysRevLett.92.178302
M. J. Rozenberg, I. H. Inoue, and M. J. Sánchez, Phys .Rev. Lett. 92, 178302 (2004) 2009-10-28T19:06:39+09:00Shallow Impurity States in Silicon and Germanium
http://esrlab.jp/div-media/defect/index.php?q=&material=&method=Theory&defect=&sb=u&id=2002#2002
W. Kohn, Solid State Physics 5, 258-319 (1957) , Academic Press, New York (Edited by F. Seitz, D. Turnbull)2008-09-01T10:34:46+09:00EPR and ENDOR Investigations of Shallow Impurities in SiC Polytypes
http://dx.doi.org/10.1002/1521-396X(199707)162:1%3c95::AID-PSSA95%3e3.0.CO;2-X
S. Greulich-Weber, phys. stat. sol. (a) 162, 95-151 (1997) 2008-07-28T13:03:08+09:00The Microscopic and Electronic Structure of Shallow Donors in SiC
http://dx.doi.org/10.1002/(SICI)1521-3951(199812)210:2%3c415::AID-PSSB415%3e3.0.CO;2-0
S. Greulich-Weber, phys. stat. sol. (b) 210, 415-427 (1998) 2008-06-23T10:46:11+09:00EPR identification of intrinsic defects in SiC
http://dx.doi.org/10.1002/pssb.200844209
J. Isoya, T. Umeda, N. Mizuochi, N. T. Son, E. Janzen, T. Ohshima, phys. stat. sol. (b) 245, 1298-1314 (2008) 2008-06-23T10:40:32+09:00Neutral Vacancies in Group-IV Semiconductors
http://dx.doi.org/10.1002/(SICI)1521-3951(199811)210:1<13::AID-PSSB13>3.0.CO;2-P
A. Zywietz, J. Furthmüller, F. Bechstedt, phys. stat. sol. (b) 210, 13 (1999) 2008-05-29T10:58:36+09:00Identification of positively charged carbon antisite-vacancy pairs in 4H-SiC
http://dx.doi.org/10.1103/PhysRevB.75.245202
T. Umeda, J. Ishoya, T. Ohshima, N. Morishita, H. Itoh, and A. Gali, Phys. Rev. B 75, 245202 (2007) 2008-05-22T00:06:02+09:00Electrical characterization of metastable carbon clusters in SiC: A theoretical study
http://dx.doi.org/10.1103/PhysRevB.73.033204
A. Gali, N. T. Son, E. Janzn, Phys. Rev. B 73, 033204 (2006) 2008-01-03T22:05:50+09:00Structure and vibrational spectra of carbon clusters in SiC
http://dx.doi.org/10.1103/PhysRevB.70.235211
Alexander Mattausch, Michel Bockstedte, and Oleg Pankratov, Phys. Rev. B 70, 235211 (2004) 2008-01-02T21:52:41+09:00Radioactive Decay Speedup at T=5 K: Electron-Capture Decay Rate of 7Be Encapsulated in C60
http://dx.doi.org/10.1103/PhysRevLett.98.252501
T. Ohtsuki, K. Ohno, T. Morisato, T. Mitsugashira, K. Hirose, H. Yuki, and J. Kasagi, Phys. Rev. Lett. 98, 252501 (2007) 2007-07-17T21:42:24+09:00Density-Functional Theory Study of Half-Metallic Heterostructures: Interstitial Mn in Si
http://dx.doi.org/10.1103/PhysRevLett.98.117202
Hua Wu, Peter Kratzer, and Matthias Scheffler, Phys. Rev. Lett. 98, 117202 (2007) 2007-07-16T00:31:47+09:00Oxygen Vacancy Clustering and Electron Localization in Oxygen-Deficient SrTiO3: LDA+U Study
http://dx.doi.org/10.1103/PhysRevLett.98.115503
Do Duc Cuong, Bora Lee, Kyeong Mi Choi, Hyo-Shin Ahn, Seungwu Han, and Jaichan Lee, Phys. Rev. Lett. 98, 115503 (2007) 2007-07-16T00:30:03+09:00Early stages of radiation damage in graphite and carbon nanostructures: A first-principles molecular dynamics study
http://dx.doi.org/10.1103/PhysRevB.75.115418
Oleg V. Yazyev, Ivano Tavernelli, Ursula Rothlisberger, and Lothar Helm, Phys. Rev. B 75, 115418 (2007) 2007-07-13T00:59:11+09:00Local-density-functional calculations of the vacancy-oxygen center in Ge
http://dx.doi.org/10.1103/PhysRevB.75.115206
A. Carvalho, R. Jones, J. Coutinho, V. J. B. Torres, S. Öberg, J. M. Campanera Alsina, M. Shaw, and P. R. Briddon, Phys. Rev. B 75, 115206 (2007) 2007-07-13T00:51:44+09:00Stability of I3 complexes in III-V compound semiconductors by tight-binding molecular dynamics
http://dx.doi.org/10.1103/PhysRevB.75.115205
G. Zollo and F. Gala, Phys. Rev. B 75, 115205 (2007) 2007-07-13T00:49:25+09:00Atomistic modeling of the (a+c)-mixed dislocation core in wurtzite GaN
http://dx.doi.org/10.1103/PhysRevB.75.115201
I. Belabbas, A. Béré, J. Chen, S. Petit, M. Akli Belkhir, P. Ruterana, and G. Nouet, Phys. Rev. B 75, 115201 (2007) 2007-07-13T00:46:07+09:00Molecular microelectrostatic view on electronic states near pentacene grain boundaries
http://dx.doi.org/10.1103/PhysRevB.75.115127
Stijn Verlaak and Paul Heremans, Phys. Rev. B 75, 115127 (2007) 2007-07-13T00:44:50+09:00Structural, electronic, and magnetic properties of Mn-doped Ge nanowires by ab initio calculations
http://dx.doi.org/10.1103/PhysRevB.75.115113
J. T. Arantes, Antônio J. R. da Silva, and A. Fazzio, Phys. Rev. B 75, 115113 (2007) 2007-07-13T00:42:49+09:00Enhancing the topological structures of defected carbon nanotubes with adsorbed hydrocarbon radicals at low temperatures
http://dx.doi.org/10.1103/PhysRevB.75.113401
R. L. Zhou, H. Y. He, and B. C. Pan, Phys. Rev. B 75, 113401 (2007) 2007-07-13T00:37:52+09:00Energetics, structure, and long-range interaction of vacancy-type defects in carbon nanotubes: Atomistic simulations
http://dx.doi.org/10.1103/PhysRevB.74.245420
J. Kotakoski, A. V. Krasheninnikov,, and K. Nordlund, Phys. Rev. B 74, 245420 (2006) 2007-07-10T12:02:00+09:00Vacancy defects and the formation of local haeckelite structures in graphene from tight-binding molecular dynamics
http://dx.doi.org/10.1103/PhysRevB.74.245411
Gun-Do Lee, C. Z. Wang, Euijoon Yoon, Nong-Moon Hwang, and K. M. Ho, Phys. Rev. B 74, 245411 (2006) 2007-07-10T12:00:36+09:00Influence of excited states of a deep substitutional dopant on majority-carrier concentration in semiconductors
http://dx.doi.org/10.1103/PhysRevB.74.245216
Hideharu Matsuura, Phys. Rev. B 74, 245216 (2006) 2007-07-10T11:54:45+09:00Enhancement of interactions between magnetic ions in semiconductors due to declustering
http://dx.doi.org/10.1103/PhysRevB.74.241303
A. Franceschetti, S. V. Barabash, J. Osorio-Guillen, A. Zunger, and M. van Schilfgaarde, Phys. Rev. B 74, 241303(R) (2006) 2007-07-10T11:34:24+09:00First-principles study of electronic properties of hydrogenated graphite
http://dx.doi.org/10.1103/PhysRevB.74.235426
A. Allouche and Y. Ferro, Phys. Rev. B 74, 235426 (2006) 2007-07-09T22:39:53+09:00Precursor mechanism for interaction of bulk interstitial atoms with Si(100)
http://dx.doi.org/10.1103/PhysRevB.74.235301
Xiao Zhang, Min Yu, Charlotte T. M. Kwok, Ramakrishnan Vaidyanathan, Richard D. Braatz, and Edmund G. Seebauer, Phys. Rev. B 74, 235301 (2006) 2007-07-09T22:33:22+09:00Comparison of two methods for circumventing the Coulomb divergence in supercell calculations for charged point defects
http://dx.doi.org/10.1103/PhysRevB.74.235209
A. F. Wright and N. A. Modine, Phys. Rev. B 74, 235209 (2006) 2007-07-09T22:29:37+09:00Theoretical study of the magnetism of Mn-doped ZnO with and without defects
http://dx.doi.org/10.1103/PhysRevB.74.235208
D. Iuan, B. Sanyal, and O. Eriksson, Phys. Rev. B 74, 235208 (2006) 2007-07-09T22:28:14+09:00Vacancy-enhanced ferromagnetism in Fe-doped rutile TiO2
http://dx.doi.org/10.1103/PhysRevB.74.235207
Jun Chen, Paul Rulis, Lizhi Ouyang, S. Satpathy, and W. Y. Ching, Phys. Rev. B 74, 235207 (2006) 2007-07-09T22:26:23+09:00Electronic and magnetic properties of V-doped anatase TiO2 from first principles
http://dx.doi.org/10.1103/PhysRevB.74.233201
Xiaosong Du, Qunxiang Li, Haibin Su, and Jinlong Yang, Phys. Rev. B 74, 233201 (2006) 2007-07-09T22:16:39+09:00Inversion of defect interactions due to ordering in Sr1−3x/2LaxTiO3 perovskites: An atomistic simulation study
http://dx.doi.org/10.1103/PhysRevB.74.214109
B. S. Thomas, N. A. Marks, and Peter Harrowell, Phys. Rev. B 74, 214109 (2006) 2007-07-04T21:00:55+09:00Atomistic simulations of radiation-induced defect formation in spinels: MgAl2O4, MgGa2O4, and MgIn2O4
http://dx.doi.org/10.1103/PhysRevB.74.214105
D. Bacorisen, Roger Smith, B. P. Uberuaga, K. E. Sickafus, J. A. Ball, and R. W. Grimes, Phys. Rev. B 74, 214105 (2006) 2007-07-04T20:56:37+09:00Surface smoothness of plasma-deposited amorphous silicon thin films: Surface diffusion of radical precursors and mechanism of Si incorporation
http://dx.doi.org/10.1103/PhysRevB.74.205324
Mayur S. Valipa, Tamas Bakos, and Dimitrios Maroudas, Phys. Rev. B 74, 205324 (2006) 2007-07-04T13:06:50+09:00Structural model of amorphous silicon annealed with tight binding
http://dx.doi.org/10.1103/PhysRevB.74.205202
N. Bernstein, J. L. Feldman,, and M. Fornari, Phys. Rev. B 74, 205202 (2006) 2007-07-04T13:00:23+09:00Density functional study of gold atoms and clusters on a graphite (0001) surface with defects
http://dx.doi.org/10.1103/PhysRevB.74.165404
Jaakko Akola and Hannu Häkkinen, Phys. Rev. B 74, 165404 (2006) 2007-06-30T22:51:15+09:00Superexchange in dilute magnetic dielectrics: Application to (Ti,Co)O2
http://dx.doi.org/10.1103/PhysRevB.74.174407
K. Kikoin and V. Fleurov, Phys. Rev. B 74, 174407 (2006) 2007-06-30T22:27:46+09:00Modeling of damage generation mechanisms in silicon at energies below the displacement threshold
http://dx.doi.org/10.1103/PhysRevB.74.174115
Iván Santos, Luis A. Marqués, and Lourdes Pelaz, Phys. Rev. B 74, 174115 (2006) 2007-06-30T21:51:21+09:00First-principles study of the intrinsic defects in PbFCl
http://dx.doi.org/10.1103/PhysRevB.74.174101
Bo Liu, Zeming Qi, and Chaoshu Shi, Phys. Rev. B 74, 174101 (2006) 2007-06-30T21:46:26+09:00Magnetizing Oxides by Substituting Nitrogen for Oxygen
http://dx.doi.org/10.1103/PhysRevLett.98.137202
I. S. Elfimov, A. Rusydi, S. I. Csiszar, Z. Hu, H. H. Hsieh, H.-J. Lin, C. T. Chen, R. Liang, and G. A. Sawatzky, Phys. Rev. Lett. 98, 137202 (2007) 2007-06-28T19:04:27+09:00Possible Approach to Overcome the Doping Asymmetry in Wideband Gap Semiconductors
http://dx.doi.org/10.1103/PhysRevLett.98.135506
Yanfa Yan, Jingbo Li, Su-Huai Wei, and M. M. Al-Jassim, Phys. Rev. Lett. 98, 135506 (2007) 2007-06-28T18:57:51+09:00Origin of Charge Density at LaAlO3 on SrTiO3 Heterointerfaces: Possibility of Intrinsic Doping
http://dx.doi.org/10.1103/PhysRevLett.98.196802
Wolter Siemons, Gertjan Koster, Hideki Yamamoto, Walter A. Harrison, Gerald Lucovsky, Theodore H. Geballe, Dave H. A. Blank, and Malcolm R. Beasley, Phys. Rev. Lett. 98, 196802 (2007) 2007-06-28T15:53:27+09:00Oxygen Vacancies in High Dielectric Constant Oxide-Semiconductor Films
http://dx.doi.org/10.1103/PhysRevLett.98.196101
Supratik Guha and Vijay Narayanan, Phys. Rev. Lett. 98, 196101 (2007) 2007-06-28T15:47:33+09:00