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- 1. Phys. Rev. B 77, 195204 (2008) , “Identification of antisite carbon split-interstitial defects in 4H-SiC”, J. W. Steeds, W. SullivanA rich variety of optical centers with high energy local vibrational modes has been found in electron-irradiated 4H-SiC in both the as-irradiated and annealed states. These energies have been measured and the annealing dependence of the optical centers has been investigated by low-temperature... (Read more)
- 2. Phys. Rev. B 77, 195203 (2008) , “Creation and identification of the two spin states of dicarbon antisite defects in 4H-SiC”, J. W. Steeds, W. Sullivan, S. A. Furkert, G. A. Evans, P. J. WellmannThis paper deals with the positive identification by low-temperature photoluminescence microspectroscopy of the two spin states of the dicarbon antisites in 4H-SiC. The defects are created by high-dose electron irradiation at room temperature or by subsequent exposure to intense 325 nm radiation at... (Read more)
- 3. J. Appl. Phys. 102, 103514 (2007) , AIP , “Characterization of defects in ZnO nanocrystals: Photoluminescence and positron annihilation spectroscopic studies”, A. K. Mishra, S. K. Chaudhuri, S. Mukherjee, A. Priyam, A. Saha, and D. DasDefects present in ZnO nanocrystals prepared by a wet chemical method have been characterized by photoluminescence (PL) and positron annihilation spectroscopy (PAS) techniques. The as-prepared sample was heat treated at different temperatures to obtain nanocrystals in the size range of 19–39 ... (Read more)
- 4. J. Appl. Phys. 101, 023516 (2007) , “Effect of screw dislocation density on optical properties in n-type wurtzite GaN”, Jeong Ho You and H. T. JohnsonThe effect of open-core screw dislocations on photoluminescence in n-doped wurtzite GaN epilayer is studied computationally and compared with experimental data. A k•p Hamiltonian calculation domain is set up to contain a dipole of open-core screw dislocations, and its size... (Read more)
- 5. Phys. Rev. B 75, 085423 (2007) , “Room-temperature atmospheric oxidation of Si nanocrystals after HF etching”, X. D. Pi, L. Mangolini, S. A. Campbell, and U. KortshagenThe effect of HF etching of the silicon oxide shell covering the surface of Si nanocrystals (NCs) on the subsequent room-temperature atmospheric oxidation of Si-NCs has been investigated by means of photoluminescence measurements, Fourier transform infrared spectroscopy, and electron paramagnetic... (Read more)
- 6. Phys. Rev. B 75, 085205 (2007) , “Luminescence properties of hexagonal boron nitride: Cathodoluminescence and photoluminescence spectroscopy measurements”, M. G. Silly, P. Jaffrennou, J. Barjon, J.-S. Lauret, F. Ducastelle, A. Loiseau, E. Obraztsova, B. Attal-Tretout, and E. RosencherCathodoluminescence and photoluminescence spectroscopies have been performed on hexagonal boron nitride powders. The combination of these techniques allows us to analyze the two observed luminescence bands. A deep-level UV emission at about 4 eV is attributed to defects or impurities, and a... (Read more)
- 7. Phys. Rev. Lett. 98, 206406 (2007) , “Role of Intermolecular Coupling in the Photophysics of Disordered Organic Semiconductors: Aggregate Emission in Regioregular Polythiophene”, Jenny Clark, Carlos Silva, Richard H. Friend, and Frank C. SpanoWe address the role of excitonic coupling on the nature of photoexcitations in the conjugated polymer regioregular poly(3-hexylthiophene). By means of temperature-dependent absorption and photoluminescence spectroscopy, we show that optical emission is overwhelmingly dominated by weakly coupled H... (Read more)
- 8. Appl. Phys. Lett. 89, 262118 (2006) , “p-type conductivity and donor-acceptor pair emission in Cd1−xFexS dilute magnetic semiconductors”, X. J. Wu, D. Z. Shen, Z. Z. Zhang, J. Y. Zhang, K. W. Liu, B. H. Li, Y. M. Lu, D. X. Zhao, and B. YaoCd1−xFexS thin films with different Fe contents were grown on c-plane sapphire by low-pressure metal organic chemical vapor deposition. The resistivity of the thin films was found to increase with the addition of more Fe contents into the... (Read more)
- 9. Appl. Phys. Lett. 89, 211114 (2006) , “Site selective studies of Er3+ emission centers in Er-implanted 6H-SiC”, V. Glukhanyuk and A. KozaneckiIn this work the high resolution site selective photoluminescence (PL) using Fourier transform spectrometer and PL excitation spectra near 1.54 µm in Er-implanted 6H-SiC were investigated. Direct evidence for the existence of three different Er3+ emitting centers... (Read more)
- 10. Appl. Phys. Lett. 89, 173108 (2006) , “Midgap luminescence centers in single-wall carbon nanotubes created by ultraviolet illumination”, Konstantin Iakoubovskii, Nobutsugu Minami, Yeji Kim, Kanae Miyashita, Said Kazaoui, and Balakrishnan NaliniThe authors report the effect of ultraviolet (UV) illumination on optical properties of single-wall carbon nanotubes (SWCNTs) isolated using various dispersants. It is demonstrated that even weak UV light (~1 mW/cm2) can irreversibly alter the SWCNT structure, thus resulting in the... (Read more)
- 11. Appl. Phys. Lett. 89, 092107 (2006) , “Photoluminescence studies of impurity transitions in AlGaN alloys”, N. Nepal, M. L. Nakarmi, J. Y. Lin, and H. X. JiangDeep ultraviolet photoluminescence (PL) spectroscopy has been employed to investigate impurity transitions in Si doped Al-rich AlGaN alloys. In addition to the previously reported donor compensating centersisolated cation vacancy with three negative charges... (Read more)
- 12. Appl. Phys. Lett. 89, 082102 (2006) , “Observation of enhanced defect emission and excitonic quenching from spherically indented ZnO”, V. A. Coleman, J. E. Bradby, C. Jagadish, and M. R. PhillipsThe influence of spherical nanoindentation on the band edge and deep level emission of single crystal c-axis ZnO has been studied by cathodoluminescence (CL) spectroscopy and monochromatic imaging. Excitonic emission is quenched at the indent site and defect emission in the range of... (Read more)
- 13. Appl. Phys. Lett. 89, 061103 (2006) , “Field induced photoluminescence quenching and enhancement of CdSe nanocrystals embedded in SiO2”, A. W. Achtstein, H. Karl, and B. StritzkerThe authors describe the operation of an electro-optical photoluminescence quenching device based on CdSe nanoclusters formed using sequential ion implantation of Cd+ and Se+ in thermally grown SiO2 on silicon. A sample geometry consisting of a semitransparent gold... (Read more)
- 14. Appl. Phys. Lett. 89, 044107 (2006) , “Photoluminescence imaging of silicon wafers”, T. Trupke, R. A. Bardos, M. C. Schubert, and W. WartaPhotoluminescence imaging is demonstrated to be an extremely fast spatially resolved characterization technique for large silicon wafers. The spatial variation of the effective minority carrier lifetime is measured without being affected by minority carrier trapping or by excess carriers in space... (Read more)
- 15. Appl. Phys. Lett. 89, 041916 (2006) , “Photoluminescence evaluation of defects generated during SiGe-on-insulator virtual substrate fabrication: Temperature ramping process”, Dong Wang, Seiichiro Ii, Hiroshi Nakashima, Ken-ichi Ikeda, Hideharu Nakashima, Koji Matsumoto, and Masahiko NakamaeCrystal qualities of Si/SiGe/Si-on-insulator structures with different SiGe thicknesses were evaluated by photoluminescence (PL). The wafers were annealed at different temperatures with a ramping rate of 5 °C/min. Free exciton PL peaks were clearly observed for the as-grown wafers and decreased... (Read more)
- 16. Appl. Phys. Lett. 89, 031902 (2006) , “Anti-Stokes photoluminescence in ZnO microcrystal”, Weitao Cao, Weimin Du, Fuhai Su, and Guohua LiLow temperature (10 K) strong anti-Stokes photoluminescence (ASPL) of ZnO microcrystal excited by low power cw 532 nm laser is reported here. Energy upconversion of 1.1 eV is obtained in our experiment with no conventional nonlinear effect. Through the study of the normal photoluminescence and... (Read more)
- 17. Appl. Phys. Lett. 88, 191904 (2006) , “Luminescence from Nd- and Dy-ion-implanted 4H–SiC”, Shinji Kawai, Takayoshi Masaki, Yoshimine Kato, and Teruaki MotookaCathodoluminescence (CL) and photoluminescence (PL) properties are studied on neodymium (Nd)- and dysprosium (Dy)-ion-implanted 4HSiC. No appreciable CL and PL can be observed for all as-implanted samples. Strong visible CL due to Nd3+ and Dy3+ is observed only after... (Read more)
- 18. Appl. Phys. Lett. 88, 161905 (2006) , “Defect characterization of Si-doped GaN films by a scanning near-field optical microscope-induced photoluminescence”, M. Yoshikawa, R. Sugie, M. Murakami, T. Matsunobe, K. Matsuda, and H. IshidaWe developed a tapping-mode-scanning near-field optical microscope to measure near-field photoluminescence (SNOM-PL) with nanometer spatial resolution using an ultraviolet laser, and we measured the defect distribution of a Si-doped GaN film. The obtained result was compared with one measured by... (Read more)
- 19. Appl. Phys. Lett. 88, 141919 (2006) , “Observation of donor-acceptor pair spectra in the photoluminescence of H- and Zn-implanted ZnO single crystals”, D. C. Reynolds, C. W. Litton, T. C. Collins, J. E. Hoelscher, J. NauseDonor-acceptor (D-A) pair spectra have been observed in the photoluminescence radiative recombination of selected donor bound exciton complexes in zinc oxide (ZnO) single crystals that have been ion implantation doped with H and Zn atoms and subsequently annealed in a nitrogen (N2)... (Read more)
- 20. J. Appl. Phys. 100, 123519 (2006) , “Origin of deep level defect related photoluminescence in annealed InP”, Youwen Zhao, Zhiyuan Dong, Shanshan Miao, Aihong Deng, Jun Yang, and Bo WangDeep level defects in annealed InP have been studied by using photoluminescence spectroscopy (PL), thermally stimulated current (TSC), deep level transient spectroscopy (DLTS), and positron annihilation lifetime (PAL). A noticeable broad PL peak centered at 1.3 eV has been observed in the InP... (Read more)
- 21. J. Appl. Phys. 100, 114303 (2006) , “Influence of paramagnetic defects on multicolored luminescence from nanocrystalline silicon”, Keisuke Sato and Kenji HirakuriWe report on the correlation between paramagnetic defects and the luminescent properties of nanocrystalline silicon (nc-Si) using electron spin resonance (ESR) and photoluminescence measurements. Nanocrystalline silicon having particle sizes from 1.9 to 3.0 nm exhibited continuous luminescence... (Read more)
- 22. J. Appl. Phys. 100, 104901 (2006) , “Photoluminescence and photoconductivity in CdTe crystals doped with Bi”, E. Saucedo, C. M. Ruiz, V. Bermúdez, E. Dieguez, E. Gombia, A. Zappettini, A. Baraldi, and N. V. SochinskiiDefect levels in CdTe doped with Bi are studied by low temperature photoluminescence, photoinduced current transient spectroscopy, photoconductivity measurements, and optical absorption. Two centers associated with the doping with Bi are reported. The first one, a deep level located at... (Read more)
- 23. J. Appl. Phys. 100, 083512 (2006) , “Spectroscopy and optically stimulated luminescence of Al2O3:C using time-resolved measurements”, E. G. Yukihara and S. W. S. McKeeverThis paper reports the observation of ultraviolet (UV) emission at 335 nm in the optically stimulated luminescence (OSL) of carbon-doped aluminum oxide (Al2O3:C) and presents results on the investigation of the OSL properties of this band, including its dose response, time... (Read more)
- 24. J. Appl. Phys. 100, 083106 (2006) , “Photoluminescence of Tb3+ doped SiNx films grown by plasma-enhanced chemical vapor deposition”, Zhizhong Yuan, Dongsheng Li, Minghua Wang, Peiliang Chen, Daoren Gong, Lei Wang, and Deren YangRoom temperature photoluminescence (PL) properties of the Tb3+ ion implanted nonstoichiometric silicon nitride (Tb3+:SiNx) and silicon dioxide (Tb3+:SiOx) were studied. The films were deposited by plasma-enhanced chemical vapor... (Read more)
- 25. J. Appl. Phys. 100, 073702 (2006) , “Size and shape effects on excitons and biexcitons in single InAs/InP quantum dots”, N. Chauvin, B. Salem, G. Bremond, G. Guillot, C. Bru-Chevallier, and M. GendrySingle InAs quantum dots grown on an InP vicinal substrate are studied using polarized microphotoluminescence. The study of electron-hole exchange energy splitting reveals that the energy splitting is influenced by quantum confinement. The biexciton binding energies found for single dots grown on... (Read more)
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