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- 1. Phys. Rev. B 77, 195204 (2008) , “Identification of antisite carbon split-interstitial defects in 4H-SiC”, J. W. Steeds, W. SullivanA rich variety of optical centers with high energy local vibrational modes has been found in electron-irradiated 4H-SiC in both the as-irradiated and annealed states. These energies have been measured and the annealing dependence of the optical centers has been investigated by low-temperature... (Read more)
- 2. Phys. Rev. B 77, 195203 (2008) , “Creation and identification of the two spin states of dicarbon antisite defects in 4H-SiC”, J. W. Steeds, W. Sullivan, S. A. Furkert, G. A. Evans, P. J. WellmannThis paper deals with the positive identification by low-temperature photoluminescence microspectroscopy of the two spin states of the dicarbon antisites in 4H-SiC. The defects are created by high-dose electron irradiation at room temperature or by subsequent exposure to intense 325 nm radiation at... (Read more)
- 3. J. Appl. Phys. 102, 103514 (2007) , AIP , “Characterization of defects in ZnO nanocrystals: Photoluminescence and positron annihilation spectroscopic studies”, A. K. Mishra, S. K. Chaudhuri, S. Mukherjee, A. Priyam, A. Saha, and D. DasDefects present in ZnO nanocrystals prepared by a wet chemical method have been characterized by photoluminescence (PL) and positron annihilation spectroscopy (PAS) techniques. The as-prepared sample was heat treated at different temperatures to obtain nanocrystals in the size range of 19–39 ... (Read more)
- 4. J. Appl. Phys. 101, 023516 (2007) , “Effect of screw dislocation density on optical properties in n-type wurtzite GaN”, Jeong Ho You and H. T. JohnsonThe effect of open-core screw dislocations on photoluminescence in n-doped wurtzite GaN epilayer is studied computationally and compared with experimental data. A k•p Hamiltonian calculation domain is set up to contain a dipole of open-core screw dislocations, and its size... (Read more)
- 5. Phys. Rev. B 75, 085423 (2007) , “Room-temperature atmospheric oxidation of Si nanocrystals after HF etching”, X. D. Pi, L. Mangolini, S. A. Campbell, and U. KortshagenThe effect of HF etching of the silicon oxide shell covering the surface of Si nanocrystals (NCs) on the subsequent room-temperature atmospheric oxidation of Si-NCs has been investigated by means of photoluminescence measurements, Fourier transform infrared spectroscopy, and electron paramagnetic... (Read more)
- 6. Phys. Rev. B 75, 085205 (2007) , “Luminescence properties of hexagonal boron nitride: Cathodoluminescence and photoluminescence spectroscopy measurements”, M. G. Silly, P. Jaffrennou, J. Barjon, J.-S. Lauret, F. Ducastelle, A. Loiseau, E. Obraztsova, B. Attal-Tretout, and E. RosencherCathodoluminescence and photoluminescence spectroscopies have been performed on hexagonal boron nitride powders. The combination of these techniques allows us to analyze the two observed luminescence bands. A deep-level UV emission at about 4 eV is attributed to defects or impurities, and a... (Read more)
- 7. Phys. Rev. Lett. 98, 206406 (2007) , “Role of Intermolecular Coupling in the Photophysics of Disordered Organic Semiconductors: Aggregate Emission in Regioregular Polythiophene”, Jenny Clark, Carlos Silva, Richard H. Friend, and Frank C. SpanoWe address the role of excitonic coupling on the nature of photoexcitations in the conjugated polymer regioregular poly(3-hexylthiophene). By means of temperature-dependent absorption and photoluminescence spectroscopy, we show that optical emission is overwhelmingly dominated by weakly coupled H... (Read more)
- 8. Appl. Phys. Lett. 89, 262118 (2006) , “p-type conductivity and donor-acceptor pair emission in Cd1−xFexS dilute magnetic semiconductors”, X. J. Wu, D. Z. Shen, Z. Z. Zhang, J. Y. Zhang, K. W. Liu, B. H. Li, Y. M. Lu, D. X. Zhao, and B. YaoCd1−xFexS thin films with different Fe contents were grown on c-plane sapphire by low-pressure metal organic chemical vapor deposition. The resistivity of the thin films was found to increase with the addition of more Fe contents into the... (Read more)
- 9. Appl. Phys. Lett. 89, 211114 (2006) , “Site selective studies of Er3+ emission centers in Er-implanted 6H-SiC”, V. Glukhanyuk and A. KozaneckiIn this work the high resolution site selective photoluminescence (PL) using Fourier transform spectrometer and PL excitation spectra near 1.54 µm in Er-implanted 6H-SiC were investigated. Direct evidence for the existence of three different Er3+ emitting centers... (Read more)
- 10. Appl. Phys. Lett. 89, 173108 (2006) , “Midgap luminescence centers in single-wall carbon nanotubes created by ultraviolet illumination”, Konstantin Iakoubovskii, Nobutsugu Minami, Yeji Kim, Kanae Miyashita, Said Kazaoui, and Balakrishnan NaliniThe authors report the effect of ultraviolet (UV) illumination on optical properties of single-wall carbon nanotubes (SWCNTs) isolated using various dispersants. It is demonstrated that even weak UV light (~1 mW/cm2) can irreversibly alter the SWCNT structure, thus resulting in the... (Read more)
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