Papers - tagged 'PL' - Defect dat@base
http://esrlab.jp/div-media/defect/index.php?q=&material=&method=PL&defect=&sb=u
Papers - Defect dat@base2010-01-18T14:43:38+09:00Investigations of well defined dislocations in silicon
http://dx.doi.org/10.1016/0378-4363(83)90311-X
H. Alexander, C. Kisielowski-Kemmerich, E. R. Weber, Physica B 116, 583-593 (1983) 2010-01-18T14:43:38+09:00Ammonolysis of Ga2O3 and its application to the sublimation source for the growth of GaN film
http://dx.doi.org/10.1016/j.jcysgro.2003.12.014
Y. J. Park , C. S. Oh , T. H. Yeom, Y. M. Yu, J. Cryst. Growth 264, 1-6 (2004) 2009-10-21T15:26:37+09:00THE OPTICALLY DETECTED MAGNETIC RESONANCE OF DANGLING BONDS AT THE Si/SiO2 INTERFACE
http://dx.doi.org/10.1016/0038-1098(86)90334-0
K. M. Lee, L. C. Kimerling, B. G. Bagley, W. E. Quinn, Solid State Commun. 57, 615-617 (1986) 2008-12-18T17:48:42+09:00EPR and ENDOR Investigations of Shallow Impurities in SiC Polytypes
http://dx.doi.org/10.1002/1521-396X(199707)162:1%3c95::AID-PSSA95%3e3.0.CO;2-X
S. Greulich-Weber, phys. stat. sol. (a) 162, 95-151 (1997) 2008-07-28T13:03:08+09:00Comprehensive characterization of hydride VPE grown GaN layers and templates
http://dx.doi.org/10.1016/S0927-796X(01)00031-6
H. MorkoƧ, Mater. Sci. Eng. R 33, 135-207 (2001) 2008-05-29T11:09:04+09:00Optically detected magnetic resonance of dislocations in silicon
http://dx.doi.org/10.1103/PhysRevB.43.6569
V. Kveder, P. Omling, H. G. Grimmeiss, Yu. A. Osipyan, Phys. Rev. B 43, 6569 (1991) 2008-05-23T12:34:23+09:00Creation and identification of the two spin states of dicarbon antisite defects in 4H-SiC
http://dx.doi.org/10.1103/PhysRevB.77.195203
J. W. Steeds, W. Sullivan, S. A. Furkert, G. A. Evans, P. J. Wellmann, Phys. Rev. B 77, 195203 (2008) 2008-05-22T00:02:20+09:00Identification of antisite carbon split-interstitial defects in 4H-SiC
http://dx.doi.org/10.1103/PhysRevB.77.195204
J. W. Steeds, W. Sullivan, Phys. Rev. B 77, 195204 (2008) 2008-05-22T00:01:06+09:00Characterization of defects in ZnO nanocrystals: Photoluminescence and positron annihilation spectroscopic studies
http://dx.doi.org/10.1063/1.2817598
A. K. Mishra, S. K. Chaudhuri, S. Mukherjee, A. Priyam, A. Saha, and D. Das, J. Appl. Phys. 102, 103514 (2007) , AIP2008-04-03T19:38:50+09:00Electrical characterization of metastable carbon clusters in SiC: A theoretical study
http://dx.doi.org/10.1103/PhysRevB.73.033204
A. Gali, N. T. Son, E. Janzn, Phys. Rev. B 73, 033204 (2006) 2008-01-03T22:05:50+09:00Structure and vibrational spectra of carbon clusters in SiC
http://dx.doi.org/10.1103/PhysRevB.70.235211
Alexander Mattausch, Michel Bockstedte, and Oleg Pankratov, Phys. Rev. B 70, 235211 (2004) 2008-01-02T21:52:41+09:00Role of Intermolecular Coupling in the Photophysics of Disordered Organic Semiconductors: Aggregate Emission in Regioregular Polythiophene
http://dx.doi.org/10.1103/PhysRevLett.98.206406
Jenny Clark, Carlos Silva, Richard H. Friend, and Frank C. Spano, Phys. Rev. Lett. 98, 206406 (2007) 2007-07-17T18:46:15+09:00Bound excitons in Cu2O: Efficient internal free exciton detector
http://dx.doi.org/10.1103/PhysRevB.74.235204
J. I. Jang, Y. Sun, B. Watkins, and J. B. Ketterson, Phys. Rev. B 74, 235204 (2006) 2007-07-09T22:24:56+09:00Optical study of excitation and deexcitation of Tm in GaN quantum dots
http://dx.doi.org/10.1103/PhysRevB.74.155310
Thomas Andreev, Nguyen Quang Liem, Yuji Hori, Mitsuhiro Tanaka, Osamu Oda, Daniel Le Si Dang, Bruno Daudin, and Bruno Gayral, Phys. Rev. B 74, 155310 (2006) 2007-06-28T15:34:01+09:00Magnetopolaron effect on shallow donors in GaN
http://dx.doi.org/10.1103/PhysRevB.74.195205
A. Wysmoek, R. Stpniewski, M. Potemski, B. Chwalisz-Pitka, K. Pakua, J. M. Baranowski, D. C. Look, S. S. Park, and K. Y. Lee, Phys. Rev. B 74, 195205 (2006) 2007-06-28T10:26:33+09:00Room-temperature atmospheric oxidation of Si nanocrystals after HF etching
http://dx.doi.org/10.1103/PhysRevB.75.085423
X. D. Pi, L. Mangolini, S. A. Campbell, and U. Kortshagen, Phys. Rev. B 75, 085423 (2007) 2007-06-18T11:38:48+09:00Luminescence properties of hexagonal boron nitride: Cathodoluminescence and photoluminescence spectroscopy measurements
http://dx.doi.org/10.1103/PhysRevB.75.085205
M. G. Silly, P. Jaffrennou, J. Barjon, J.-S. Lauret, F. Ducastelle, A. Loiseau, E. Obraztsova, B. Attal-Tretout, and E. Rosencher, Phys. Rev. B 75, 085205 (2007) 2007-06-18T11:23:04+09:00Optical Detection and Ionization of Donors in Specific Electronic and Nuclear Spin States
http://dx.doi.org/10.1103/PhysRevLett.97.227401
A. Yang, M. Steger, D. Karaiskaj, M. L. W. Thewalt, M. Cardona, K. M. Itoh, H. Riemann, N. V. Abrosimov, M. F. Churbanov, A. V. Gusev, A. D. Bulanov, A. K. Kaliteevskii, O. N. Godisov, P. Becker, H.-J. Pohl, J. W. Ager III, and E. E. Haller, Phys. Rev. Lett. 97, 227401 (2006) 2007-06-18T10:06:21+09:00Exciton migration in organic thin films
http://dx.doi.org/10.1063/1.2215196
Y. C. Zhou, Y. Wu, L. L. Ma, J. Zhou, X. M. Ding, and X. Y. Hou, J. Appl. Phys. 100, 023712 (2006) 2007-04-05T14:58:50+09:00Electric-field-induced quenching of photoluminescence in photoconductive organic thin film structures based on Eu3+ complexes
http://dx.doi.org/10.1063/1.2229577
J. Kalinowski, W. Stampor, M. Cocchi, D. Virgili, and V. Fattori, J. Appl. Phys. 100, 034318 (2006) 2007-04-05T14:57:35+09:00Midgap luminescence centers in single-wall carbon nanotubes created by ultraviolet illumination
http://dx.doi.org/10.1063/1.2364157
Konstantin Iakoubovskii, Nobutsugu Minami, Yeji Kim, Kanae Miyashita, Said Kazaoui, and Balakrishnan Nalini, Appl. Phys. Lett. 89, 173108 (2006) 2007-04-05T14:48:41+09:00Effect of screw dislocation density on optical properties in n-type wurtzite GaN
http://dx.doi.org/10.1063/1.2407455
Jeong Ho You and H. T. Johnson, J. Appl. Phys. 101, 023516 (2007) 2007-02-22T13:40:37+09:00Optically-detected magnetic resonance of spin-paired complexes emitting in the 2.3 eV spectral region in Mg-doped GaN
http://dx.doi.org/10.1103/PhysRevB.74.235205
G. N. Aliev, S. Zeng, S. J. Bingham, D. Wolverson, J. J. Davies, T. Wang, and P. J. Parbrook, Phys. Rev. B 74, 235205 (2006) 2007-02-01T11:20:12+09:00Annealing of multivacancy defects in 4H-SiC
http://dx.doi.org/10.1103/PhysRevB.74.235201
W. E. Carlos, N. Y. Garces, E. R. Glaser, and M. A. Fanton, Phys. Rev. B 74, 235201 (2006) 2007-02-01T11:17:36+09:00Combined photoluminescence-imaging and deep-level transient spectroscopy of recombination processes at stacking faults in 4H-SiC
http://dx.doi.org/10.1103/PhysRevB.74.233203
A. Galeckas, A. Hallén, S. Majdi, J. Linnros, and P. Pirouz, Phys. Rev. B 74, 233203 (2006) 2007-02-01T11:13:55+09:00p-type conductivity and donor-acceptor pair emission in Cd1−xFexS dilute magnetic semiconductors
http://dx.doi.org/10.1063/1.2425028
X. J. Wu, D. Z. Shen, Z. Z. Zhang, J. Y. Zhang, K. W. Liu, B. H. Li, Y. M. Lu, D. X. Zhao, and B. Yao, Appl. Phys. Lett. 89, 262118 (2006) 2007-02-01T11:03:55+09:00Origin of deep level defect related photoluminescence in annealed InP
http://dx.doi.org/10.1063/1.2404467
Youwen Zhao, Zhiyuan Dong, Shanshan Miao, Aihong Deng, Jun Yang, and Bo Wang, J. Appl. Phys. 100, 123519 (2006) 2007-02-01T10:34:54+09:00Influence of paramagnetic defects on multicolored luminescence from nanocrystalline silicon
http://dx.doi.org/10.1063/1.2399933
Keisuke Sato and Kenji Hirakuri, J. Appl. Phys. 100, 114303 (2006) 2006-12-22T19:44:59+09:00Photoluminescence and photoconductivity in CdTe crystals doped with Bi
http://dx.doi.org/10.1063/1.2382668
E. Saucedo, C. M. Ruiz, V. Bermúdez, E. Dieguez, E. Gombia, A. Zappettini, A. Baraldi, and N. V. Sochinskii, J. Appl. Phys. 100, 104901 (2006) 2006-12-14T15:39:09+09:00Site selective studies of Er3+ emission centers in Er-implanted 6H-SiC
http://dx.doi.org/10.1063/1.2397025
V. Glukhanyuk and A. Kozanecki, Appl. Phys. Lett. 89, 211114 (2006) 2006-12-14T15:28:45+09:00Electrical properties of unintentionally doped semi-insulating and conducting 6H-SiC
http://dx.doi.org/10.1063/1.2227622
W. C. Mitchel, W. D. Mitchell, Z. Q. Fang, D. C. Look, S. R. Smith, H. E. Smith, Igor Khlebnikov, Y. I. Khlebnikov, C. Basceri, and C. Balkas, J. Appl. Phys. 100, 043706 (2006) 2006-11-20T14:54:47+09:00Spectroscopy and optically stimulated luminescence of Al2O3:C using time-resolved measurements
http://dx.doi.org/10.1063/1.2357344
E. G. Yukihara and S. W. S. McKeever, J. Appl. Phys. 100, 083512 (2006) 2006-11-16T14:15:40+09:00Photoluminescence of Tb3+ doped SiNx films grown by plasma-enhanced chemical vapor deposition
http://dx.doi.org/10.1063/1.2358301
Zhizhong Yuan, Dongsheng Li, Minghua Wang, Peiliang Chen, Daoren Gong, Lei Wang, and Deren Yang, J. Appl. Phys. 100, 083106 (2006) 2006-11-16T14:09:12+09:00Identification of the Gold-Lithium Defect L1 in Silicon with the Trigonal Centre Au2--(Li+)3 by Electrical, Optical and Magnetic Resonance Spectroscopy
http://dx.doi.org/10.1002/1521-3951(200010)221:2<625::AID-PSSB625>3.0.CO;2-R
2006-11-09T20:43:06+09:00Size and shape effects on excitons and biexcitons in single InAs/InP quantum dots
http://dx.doi.org/10.1063/1.2353896
N. Chauvin, B. Salem, G. Bremond, G. Guillot, C. Bru-Chevallier, and M. Gendry, J. Appl. Phys. 100, 073702 (2006) 2006-11-09T17:55:42+09:00Identification by photoluminescence and positron annihilation of vacancy and interstitial intrinsic defects in ion-implanted silicon
http://dx.doi.org/10.1063/1.2354332
R. Harding, G. Davies, J. Tan, P. G. Coleman, C. P. Burrows, and J. Wong-Leung, J. Appl. Phys. 100, 073501 (2006) 2006-11-09T17:44:18+09:00Photoluminescence analysis on the indium doped Cd0.9Zn0.1Te crystal
http://dx.doi.org/10.1063/1.2213155
Qiang Li, Wanqi Jie, Li Fu, Ge Yang, Gangqiang Zha, Tao Wang, and Dongmei Zeng, J. Appl. Phys. 100, 013518 (2006) 2006-11-09T16:40:35+09:00Visible and near-infrared photoluminescences of europium-doped titania film
http://dx.doi.org/10.1063/1.2221095
C. W. Jia, E. Q. Xie, J. G. Zhao, Z. W. Sun, and A. H. Peng, J. Appl. Phys. 100, 023529 (2006) 2006-11-09T15:53:50+09:00Exciton fine structure and biexciton binding energy in single self-assembled InAs/AlAs quantum dots
http://dx.doi.org/10.1063/1.2209089
D. Sarkar, H. P. van der Meulen, J. M. Calleja, J. M. Becker, R. J. Haug, and K. Pierz, J. Appl. Phys. 100, 023109 (2006) 2006-11-09T15:32:15+09:00Thermally stable carbon-related centers in 6H-SiC: Photoluminescence spectra and microscopic models
http://dx.doi.org/10.1103/PhysRevB.73.161201
A. Mattausch, M. Bockstedte, O. Pankratov, J. W. Steeds, S. Furkert, J. M. Hayes, W. Sullivan, N. G. Wright, Phys. Rev. B 73, 161201(R) (2006) 2006-11-07T18:41:07+09:00Luminescence from Nd- and Dy-ion-implanted 4H–SiC
http://dx.doi.org/10.1063/1.2202691
Shinji Kawai, Takayoshi Masaki, Yoshimine Kato, and Teruaki Motooka, Appl. Phys. Lett. 88, 191904 (2006) 2006-11-07T18:29:19+09:00Properties of Fe-doped semi-insulating GaN structures
http://dx.doi.org/10.1116/1.1633776
A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, S. J. Pearton, J. Vac. Sci. Technol. B 22, 120-125 (2004) 2006-11-07T18:23:10+09:00Effects of hydrogen bond redistribution on photoluminescence of a-SiC:H films under thermal treatment
http://dx.doi.org/10.1063/1.2198935
A. V. Vasin, S. P. Kolesnik, A. A. Konchits, V. I. Kushnirenko, V. S. Lysenko, A. N. Nazarov, A. V. Rusavsky, and S. Ashok, J. Appl. Phys. 99, 113520 (2006) 2006-11-07T16:02:38+09:00Diffusion and Reactions of Hydrogen in F2-Laser-Irradiated SiO2 Glass
http://dx.doi.org/10.1103/PhysRevLett.89.135507
Koichi Kajihara, Linards Skuja, Masahiro Hirano, and Hideo Hosono, Phys. Rev. Lett. 89, 135507 (2002) 2006-11-07T13:34:21+09:00Optically active oxygen-deficiency-related centers in amorphous silicon dioxide
http://dx.doi.org/10.1016/S0022-3093(98)00720-0
Linards Skuja, J. Non-Cryst. Solids 239, 16-48 (1998) 2006-10-31T18:09:13+09:00Defect formation in amorphous SiO2 by ion implantation: Electronic excitation effects and chemical effects
http://dx.doi.org/10.1016/S0168-583X(98)00097-4
H. Hosono, N. Matsunami, Nucl. Instrum. Methods Phys. Res. B 141, 566-574 (1998) 2006-10-31T17:54:43+09:00Experimental Evidence for Frenkel Defect Formation in Amorphous SiO2 by Electronic Excitation
http://dx.doi.org/10.1103/PhysRevLett.80.317
H. Hosono, H. Kawazoe, N. Matsunami, Phys. Rev. Lett. 80, 317-320 (1998) 2006-10-31T12:42:10+09:00Thermal stability of gamma-irradiation-induced oxygen-deficient centers in silica
http://dx.doi.org/10.1103/PhysRevB.73.115203
S. Agnello and L. Nuccio, Phys. Rev. B 73, 115203 (2006) 2006-10-29T18:41:39+09:00Photoluminescence of wurtzite ZnO under hydrostatic pressure
http://dx.doi.org/10.1063/1.2177928
S. J. Chen, Y. C. Liu, C. L. Shao, C. S. Xu, Y. X. Liu, L. Wang, B. B. Liu, and G. T. Zou, J. Appl. Phys. 99, 066102 (2006) 2006-10-19T21:52:10+09:00Intrinsic exciton transitions in high-quality ZnO thin films grown by plasma-enhanced molecular-beam epitaxy on sapphire substrates
http://dx.doi.org/10.1063/1.2183354
X. Q. Zhang, Z. G. Yao, S. H. Huang, Ikuo Suemune, and H. Kumano, J. Appl. Phys. 99, 063709 (2006) 2006-10-19T21:41:54+09:00