Showing
10, 25, 50, 100, 500, 1000, all papers per page.
Sort by:
last publication date,
older publication date,
last update date.
- 1. Appl. Phys. Lett. 90, 051902 (2007) , “Recombination processes in undoped and rare-earth doped MAl2O4 (M=Ca,Sr) persistent phosphors investigated by optically detected magnetic resonance”, Stefan Schweizer, Bastian Henke, Uldis Rogulis, and William M. YenThe authors present magneto-optical measurements on single-crystal MAl2O4 (M=Ca and Sr) persistent phosphors that are nominally pure or doped with Eu and Nd or Dy, respectively. Their recombination luminescence (RL) and microwave-induced changes in the RL in a... (Read more)
- 2. J. Appl. Phys. 100, 114303 (2006) , “Influence of paramagnetic defects on multicolored luminescence from nanocrystalline silicon”, Keisuke Sato and Kenji HirakuriWe report on the correlation between paramagnetic defects and the luminescent properties of nanocrystalline silicon (nc-Si) using electron spin resonance (ESR) and photoluminescence measurements. Nanocrystalline silicon having particle sizes from 1.9 to 3.0 nm exhibited continuous luminescence... (Read more)
- 3. Phys. Rev. B 74, 195205 (2006) , “Magnetopolaron effect on shallow donors in GaN”, A. Wysmoek, R. Stpniewski, M. Potemski, B. Chwalisz-Pitka, K. Pakua, J. M. Baranowski, D. C. Look, S. S. Park, and K. Y. LeeResonant interaction between longitudinal-optic (LO) phonons and electrons bound on shallow donors in GaN is studied using magnetoluminescence of neutral-donor bound excitons (D0X). The experiments were performed on high-quality freestanding GaN material and heteroepitaxial... (Read more)
- 4. Phys. Rev. B 74, 161201 (2006) , “Detection of magnetic resonance of donor-bound electrons in GaAs by Kerr rotation”, T. A. Kennedy, J. Whitaker, A. Shabaev, A. S. Bracker, and D. GammonMagnetic resonance of electrons in lightly doped GaAs layers has been detected at 5.8 T by magneto-optical Kerr rotation. A study over a wide range of microwave powers shows (1) resonance without dynamic nuclear polarization (DNP), (2) resonance enhanced by DNP, and (3) DNP pinning of the resonance... (Read more)
- 5. Phys. Rev. B 73, 125204 (2006) , “Optically detected magnetic resonance studies of point defects in Ga(Al)NAs”, I. P. Vorona, T.Mchedlidze, D. Dagnelund, I. A. Buyanova, W. M. Chen, K. KöhlerAn optically detected magnetic resonance (ODMR) study of Ga(Al)NAs alloys grown by molecular beam epitaxy on GaAs substrates is presented. A number of grown-in defects were observed which act as nonradiative recombination centers. A detailed analysis of experimental data using a spin Hamiltonian... (Read more)
- 6. Phys. Rev. B 71, 115205 (2005) , “Origin of the 6885-cm–1 luminescence lines in ZnO: Vanadium versus copper”, L. S. Vlasenko, G. D. Watkins, R. HelbigOptical detection of electron paramagnetic resonance reveals the I=7/2 EPR spectrum of V2+ in the sharp photoluminescence (PL) lines often observed at ~6885 cm1 in ZnO, which have universally been assumed previously to arise from copper. An alternative model for... (Read more)
- 7. Phys. Rev. B 70, 245204 (2004) , “Silicon vacancy annealing and DI luminescence in 6H-SiC”, M. V. B. Pinheiro, E. Rauls, U. Gerstmann, S. Greulich-Weber, H. Overhof, and J.-M. SpaethCombining electron paramagnetic resonance measurements with ab initio calculations, we identify the VCCSi(SiCCSi) complex as a second annealing product of the silicon vacancy via an analysis of resolved carbon hyperfine interactions and of... (Read more)
- 8. Phys. Rev. B 69, 45208 (2004) , “Intrinsic defects in GaN. II. Electronically enhanced migration of interstitial Ga observed by optical detection of electron paramagnetic resonance”, P. Johannesen, A. Zakrzewski, L. S. Vlasenko, G. D. Watkins, Akira Usui, Haruo Sunakawa, Masashi MizutaOptical excitation at 1.7 K with 364-nm laser light produces partial annealing recovery of the damage produced in GaN by 2.5-MeV electron irradiation in situ at 4.2 K. Observed is a reduction in the irradiation-produced 0.95-eV photoluminescence (PL) band, recovery in the visible... (Read more)
- 9. Phys. Rev. B 69, 45207 (2004) , “Intrinsic defects in GaN. I. Ga sublattice defects observed by optical detection of electron paramagnetic resonance”, K. H. Chow, L. S. Vlasenko, P. Johannesen, C. Bozdog, G. D. Watkins, Akira Usui, Haruo Sunakawa, Chiaki Sasaoka, Masashi MizutaIrradiation of GaN by 2.5-MeV electrons in situ at 4.2 K produces a broad photoluminescence (PL) band centered at 0.95 eV. Optical detection of electron paramagnetic resonance (ODEPR) in the band reveals two very similar, but distinct, signals, L5 and L6, which we identify as interstitial... (Read more)
- 10. Physica B 340-342, 225-229 (2003) , “Optical absorption of a Li-related impurity in ZnO”, Deirdre Mc Cabe, Karl Johnston, Martin O. Henry, Enda Mc Glynn, Eduardo Alves and J. John DaviesA defect associated with Li in ZnO is reported. This is an optical system which absorbs strongly in the red part of the spectrum: a doublet, the zero phonon lines are at 1.884 and 1.879 eV, respectively. The chemical nature of the centre is identified through isotope substitution. This is the first... (Read more)
- 11. Mater. Sci. Eng. 93, 39-48 (2002) , “Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)”, E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas, Jr , W. J. Moore, B. V. Shanabrook, A. E. Wickenden, D. D. Koleske, R. L. Henry, M. W. Bayerl, M. S. Brandt, H. Obloh, P. Kozodoy, S. P. DenBaars, U. K. Mishra, S. Nakamura, E. Haus, J. S. Speck, J. E. Van Nostrand, M. A. Sanchez, E. Calleja, A. J. Ptak, T. H. Myers and R. J. MolnarWe will highlight our recent work on the properties of residual defects and dopants in GaN heteroepitaxial layers and on the nature of recombination from InGaN single quantum well (SQW) light emitting diodes (LEDs) through magnetic resonance techniques. Electron paramagnetic resonance (EPR) and... (Read more)
- 12. Phys. Rev. B 66, 155214 (2002) , “Ligand hyperfine interaction at the neutral silicon vacancy in 4H- and 6H-SiC”, Mt. Wagner, N. Q. Thinh, N. T. Son, W. M. Chen, E. Janzén, P. G. Baranov, E. N. Mokhov, C. Hallin, J. L. LindströmThe silicon vacancy in its neutral charge state (VSi) has been unambiguously identified in 4H- and 6H-SiC. This was achieved by observation of ligand hyperfine interaction with the four carbon atoms in the nearest-neighbor shell and the twelve silicon atoms in the next-nearest-neighbor... (Read more)
- 13. Phys. Rev. B 65, 85312 (2002) , “Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition”, E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas Jr, W. J. Moore, B. V. Shanabrook, R.L. Henry, A. E. Wickenden, D. D. Koleske, H.Obloh, P. Kozodoy, S. P. DenBaars, U. K. MishraElectron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) experiments have been performed on a set of GaN epitaxial layers doped with Mg from 2.5×1018 to 5.0×1019 cm-3. The samples were also characterized by secondary-ion-mass... (Read more)
- 14. Phys. Rev. B 65, 205202 (2002) , “Defects observed by optical detection of electron paramagnetic resonance in electron-irradiated p-type GaN”, L. S. Vlasenko, C. Bozdog, G. D. Watkins, F. Shahedipour, B. W. WesselsIrradiation of p-type (Mg-doped) GaN in situ at 4.2 K by 2.5 MeV electrons reduces the visible luminescence and creates a broad luminescence band in the infrared at ?0.95?eV. Upon annealing at 180 K, partial recovery of the visible luminescence occurs and a well resolved S=1 center is observed by... (Read more)
- 15. Phys. Rev. B 65, 125207 (2002) , “Optical detection of electron paramagnetic resonance in low-dislocation-content GaN grown by hydride vapor-phase epitaxy”, C. Bozdog, G. D. Watkins, H. Sunakawa, N. Kuroda, A. UsuiThree broad overlapping photoluminescence bands, centered at ?1.75?eV (red), ?2.2?eV (yellow), and ?2.33?eV (green), are observed in low-dislocation-content GaN grown by the hydride vapor-phase epitaxy method. Optical detection of electron paramagnetic resonance (ODEPR) studies reveal that each is... (Read more)
- 16. Mater. Sci. Eng. R 33, 135-207 (2001) , “Comprehensive characterization of hydride VPE grown GaN layers and templates”, H. MorkoçGaN community has recently recognized that it is imperative that the extended, and point defects in GaN and related materials, and the mechanisms for their formation are understood. This is a first and an important step, which must be followed by defect reduction before full implementation of this... (Read more)
- 17. Phys. Rev. B 64, 245212 (2001) , “Structure of the silicon vacancy in 6H-SiC after annealing identified as the carbon vacancy-carbon antisite pair”, Th. Lingner, S. Greulich-Weber, J.-M. Spaeth, U. Gerstmann, E. Rauls, Z. Hajnal, Th. Frauenheim, H. OverhofWe investigated radiation-induced defects in neutron-irradiated and subsequently annealed 6H-silicon carbide (SiC) with electron paramagnetic resonance (EPR), the magnetic circular dichroism of the absorption (MCDA), and MCDA-detected EPR (MCDA-EPR). In samples annealed beyond the annealing... (Read more)
- 18. Physica B 308-310, 976-979 (2001) , “Magnetic resonance studies of ZnO”, W. E. Carlos, E. R. Glaser and D. C. LookWe have used EPR and ODMR to study state-of-the-art bulk ZnO single crystals. Most of the samples are n-type; however, under certain conditions (e-irradiated or annealed), we observe a center due to residual nitrogen (g||=1.9953, g=1.9633 and Aiso=1.225 mT, Aaniso=0.864 mT). The N center is a... (Read more)
- 19. Physica B 308-310, 753-756 (2001) , “On the problem of the EL2 structure in semi-insulating GaAs: high-frequency ODEPR/ODENDOR measurements in W-band”, I. Tkach, K. Krambrock and J. -M. SpaethFor almost two decades the structure model of the EL2 defect in semi-insulating (SI) GaAs has been controversially discussed. Neither the isolated AsGa with Td symmetry, nor the AsGa–Asi pair model nor any other AsGa-related defect model could be unambiguously established. The reason was that... (Read more)
- 20. Physica B 308-310, 66-68 (2001) , “Electron paramagnetic resonance of GaN detected by recombination afterglow”, U. Rogulis, S. Schweizer and J. -M. SpaethX-irradiation at 4.2 K of GaN produces a long lasting recombination afterglow (RL). This afterglow quenches in high magnetic fields, but it can be increased by applying microwave radiation (93 GHz) yielding resonance lines (RL-EPR) for appropriate magnetic fields. For a free standing GaN... (Read more)
- 21. Physica B 308-310, 51-57 (2001) , “Magnetic resonance studies of defects in GaN with reduced dislocation densities”, E. R. Glaser, J. A. Freitas, Jr. , G. C. Braga, W. E. Carlos, M. E. Twigg, A. E. Wickenden, D. D. Koleske, R. L. Henry, M. Leszczynski, I. Grzegory, T. Suski, S. Porowski, S. S. Park, K. Y. Lee and R. J. MolnarMagnetic resonance experiments, including optically detected magnetic resonance (ODMR) and electron paramagnetic resonance (EPR), have been performed on Si-doped homoepitaxial GaN layers grown by MOCVD and on high quality, free-standing (200 μm-thick) GaN grown by HVPE. This allowed us to... (Read more)
- 22. Phys. Rev. B 62, 16572 (2000) , “Magneto-optical studies of the 0.88-eV photoluminescence emission in electron-irradiated GaN”, Mt. Waganer, I. A. Buyanova, N. Q. Thinh, W. M. Chen, B. Monemar, J. L. Lindström, H. Amano, I. AkasakiProperties of the 0.88-eV photoluminescence (PL) in electron-irradiated wurtzite GaN have been investigated in detail by a combination of various magneto-optical techniques, including Zeeman measurements of PL, optically detected magnetic resonance (ODMR), and level anticrossing (LAC). ODMR... (Read more)
- 23. Phys. Rev. B 62, 12923-12926 (2000) , “Electron paramagnetic resonance of Cu(d9) in GaN”, C. Bozdog, K. H. Chow, G. D. Watkins, H. Sunakawa, N. Kuroda, A. UsuiElectron paramagnetic resonance of Cu2+(d9) has been detected optically in the visible and near-infrared luminescence of wurtzite GaN. Its effective S=1/2 spin Hamiltonian parameters are g‖=±0.20(5), g⊥=+1.549(1), and... (Read more)
- 24. Phys. Rev. Lett. 85, 2761 (2000) , “Detection of Interstitial Ga in GaN”, K. H. Chow, G. D. Watkins, Akira Usui, M. MizutaWe report the direct detection of interstitial Ga by optical detection of electron paramagnetic resonance (ODEPR) in the photoluminescence of n-type GaN after irradiation in situ at 4.2 K with 2.5 MeV electrons. It is stable upon annealing until room temperature, where it becomes mobile and trapped... (Read more)
- 25. Phys. Rev. B 59, 12479-12486 (1999) , “Optical detection of electron paramagnetic resonance in electron-irradiated GaN”, C. Bozdog, H. Przybylinska, G. D. Watkins, V. Härle, F. Scholz, M. Mayer, M. Kamp, R. J. Molnar, A. E. Wickenden, D. D. Koleske, R. L. Henry2.5 MeV electron irradiation of wurtzite GaN epitaxially grown on sapphire substrates greatly reduces its near-UV and visible luminescence, producing two bands in the near infrared. In one of these, a broad structureless band centered at ∼0.95 eV, three optically detected S=1/2 electron... (Read more)GaN| ODMR PL electron-irradiation| 69Ga EM L1 L2 L3 L4 n-type semi-insulating .inp files: GaN/L3 GaN/L4 | last update: Takahide Umeda
Showing
10, 25, 50, 100, 500, 1000, all papers per page.
Sort by:
last publication date,
older publication date,
last update date.
All papers (3399)
Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
(view as: tree
,
cloud
)
1329 | untagged |
Materials
(111 tags)
Others(101 tags)
Technique
(46 tags)
Details
(591 tags)
Bond(35 tags)
Defect(interstitial)(18 tags)
Defect(vacancy)(15 tags)
Defect-type(19 tags)
Element(65 tags)
Energy(8 tags)
Isotope(56 tags)
Label(303 tags)
Sample(17 tags)
Spin(8 tags)
Symmetry(15 tags)