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- 1. Appl. Phys. Lett. 90, 051902 (2007) , “Recombination processes in undoped and rare-earth doped MAl2O4 (M=Ca,Sr) persistent phosphors investigated by optically detected magnetic resonance”, Stefan Schweizer, Bastian Henke, Uldis Rogulis, and William M. YenThe authors present magneto-optical measurements on single-crystal MAl2O4 (M=Ca and Sr) persistent phosphors that are nominally pure or doped with Eu and Nd or Dy, respectively. Their recombination luminescence (RL) and microwave-induced changes in the RL in a... (Read more)
- 2. J. Appl. Phys. 100, 114303 (2006) , “Influence of paramagnetic defects on multicolored luminescence from nanocrystalline silicon”, Keisuke Sato and Kenji HirakuriWe report on the correlation between paramagnetic defects and the luminescent properties of nanocrystalline silicon (nc-Si) using electron spin resonance (ESR) and photoluminescence measurements. Nanocrystalline silicon having particle sizes from 1.9 to 3.0 nm exhibited continuous luminescence... (Read more)
- 3. Phys. Rev. B 74, 195205 (2006) , “Magnetopolaron effect on shallow donors in GaN”, A. Wysmoek, R. Stpniewski, M. Potemski, B. Chwalisz-Pitka, K. Pakua, J. M. Baranowski, D. C. Look, S. S. Park, and K. Y. LeeResonant interaction between longitudinal-optic (LO) phonons and electrons bound on shallow donors in GaN is studied using magnetoluminescence of neutral-donor bound excitons (D0X). The experiments were performed on high-quality freestanding GaN material and heteroepitaxial... (Read more)
- 4. Phys. Rev. B 74, 161201 (2006) , “Detection of magnetic resonance of donor-bound electrons in GaAs by Kerr rotation”, T. A. Kennedy, J. Whitaker, A. Shabaev, A. S. Bracker, and D. GammonMagnetic resonance of electrons in lightly doped GaAs layers has been detected at 5.8 T by magneto-optical Kerr rotation. A study over a wide range of microwave powers shows (1) resonance without dynamic nuclear polarization (DNP), (2) resonance enhanced by DNP, and (3) DNP pinning of the resonance... (Read more)
- 5. Phys. Rev. B 73, 125204 (2006) , “Optically detected magnetic resonance studies of point defects in Ga(Al)NAs”, I. P. Vorona, T.Mchedlidze, D. Dagnelund, I. A. Buyanova, W. M. Chen, K. KöhlerAn optically detected magnetic resonance (ODMR) study of Ga(Al)NAs alloys grown by molecular beam epitaxy on GaAs substrates is presented. A number of grown-in defects were observed which act as nonradiative recombination centers. A detailed analysis of experimental data using a spin Hamiltonian... (Read more)
- 6. Phys. Rev. B 71, 115205 (2005) , “Origin of the 6885-cm–1 luminescence lines in ZnO: Vanadium versus copper”, L. S. Vlasenko, G. D. Watkins, R. HelbigOptical detection of electron paramagnetic resonance reveals the I=7/2 EPR spectrum of V2+ in the sharp photoluminescence (PL) lines often observed at ~6885 cm1 in ZnO, which have universally been assumed previously to arise from copper. An alternative model for... (Read more)
- 7. Phys. Rev. B 70, 245204 (2004) , “Silicon vacancy annealing and DI luminescence in 6H-SiC”, M. V. B. Pinheiro, E. Rauls, U. Gerstmann, S. Greulich-Weber, H. Overhof, and J.-M. SpaethCombining electron paramagnetic resonance measurements with ab initio calculations, we identify the VCCSi(SiCCSi) complex as a second annealing product of the silicon vacancy via an analysis of resolved carbon hyperfine interactions and of... (Read more)
- 8. Phys. Rev. B 69, 45208 (2004) , “Intrinsic defects in GaN. II. Electronically enhanced migration of interstitial Ga observed by optical detection of electron paramagnetic resonance”, P. Johannesen, A. Zakrzewski, L. S. Vlasenko, G. D. Watkins, Akira Usui, Haruo Sunakawa, Masashi MizutaOptical excitation at 1.7 K with 364-nm laser light produces partial annealing recovery of the damage produced in GaN by 2.5-MeV electron irradiation in situ at 4.2 K. Observed is a reduction in the irradiation-produced 0.95-eV photoluminescence (PL) band, recovery in the visible... (Read more)
- 9. Phys. Rev. B 69, 45207 (2004) , “Intrinsic defects in GaN. I. Ga sublattice defects observed by optical detection of electron paramagnetic resonance”, K. H. Chow, L. S. Vlasenko, P. Johannesen, C. Bozdog, G. D. Watkins, Akira Usui, Haruo Sunakawa, Chiaki Sasaoka, Masashi MizutaIrradiation of GaN by 2.5-MeV electrons in situ at 4.2 K produces a broad photoluminescence (PL) band centered at 0.95 eV. Optical detection of electron paramagnetic resonance (ODEPR) in the band reveals two very similar, but distinct, signals, L5 and L6, which we identify as interstitial... (Read more)
- 10. Physica B 340-342, 225-229 (2003) , “Optical absorption of a Li-related impurity in ZnO”, Deirdre Mc Cabe, Karl Johnston, Martin O. Henry, Enda Mc Glynn, Eduardo Alves and J. John DaviesA defect associated with Li in ZnO is reported. This is an optical system which absorbs strongly in the red part of the spectrum: a doublet, the zero phonon lines are at 1.884 and 1.879 eV, respectively. The chemical nature of the centre is identified through isotope substitution. This is the first... (Read more)
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