Papers - tagged 'EPR semi-insulating' - Defect dat@base
http://esrlab.jp/div-media/defect/index.php?q=&material=&method=EPR&defect=semi-insulating&sb=u
Papers - Defect dat@base2010-01-18T17:38:37+09:00Identification of the Carbon Antisite-Vacancy Pair in 4H-SiC
http://dx.doi.org/10.1103/PhysRevLett.96.145501
T. Umeda, N. T. Son, J. Isoya, E. Janzn, T. Ohshima, N. Morishita, H. Itoh, A. Gali, M. Bockstedte, Phys. Rev. Lett. 96, 145501 (2006) 2010-01-18T17:38:37+09:00EPR identification of intrinsic defects in SiC
http://dx.doi.org/10.1002/pssb.200844209
J. Isoya, T. Umeda, N. Mizuochi, N. T. Son, E. Janzen, T. Ohshima, phys. stat. sol. (b) 245, 1298-1314 (2008) 2008-06-23T10:40:32+09:00Divacancy in 4H-SiC
http://dx.doi.org/10.1103/PhysRevLett.96.055501
2006-11-06T18:59:36+09:00Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)
http://dx.doi.org/10.1016/S0921-5107(02)00007-7
E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas, Jr , W. J. Moore, B. V. Shanabrook, A. E. Wickenden, D. D. Koleske, R. L. Henry, M. W. Bayerl, M. S. Brandt, H. Obloh, P. Kozodoy, S. P. DenBaars, U. K. Mishra, S. Nakamura, E. Haus, J. S. Speck, J. E. Van Nostrand, M. A. Sanchez, E. Calleja, A. J. Ptak, T. H. Myers and R. J. Molnar, Mater. Sci. Eng. 93, 39-48 (2002) 2006-03-17T15:39:05+09:00Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition
http://dx.doi.org/10.1103/PhysRevB.65.085312
E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas Jr, W. J. Moore, B. V. Shanabrook, R.L. Henry, A. E. Wickenden, D. D. Koleske, H.Obloh, P. Kozodoy, S. P. DenBaars, U. K. Mishra, Phys. Rev. B 65, 85312 (2002) 2006-03-17T14:18:00+09:00Optical and magnetic properties of Mn in bulk GaN
http://dx.doi.org/10.1103/PhysRevB.69.115210
A. Wolos, M. Palczewska, M. Zajac, J. Gosk, M. Kaminska, A. Twardowski, M. Bockowski, I. Grzegory, S. Porowski, Phys. Rev. B 69, 115210 (2004) 2006-03-17T13:41:33+09:00Contactless studies of semi-insulating 4H–SiC
http://dx.doi.org/10.1016/S0921-4526(01)00870-5
W. E. Carlos, W. J. Moore, G. C. B Braga, J. A. Freitas, Jr. , E. R. Glaser and B. V. Shanabrook, Physica B 308-310, 691 (2001) 2006-03-10T18:25:10+09:00Defects in SiC
http://dx.doi.org/10.1016/j.physb.2003.09.001
2006-03-10T18:22:26+09:00Photosensitive electron paramagnetic resonance spectra in semi-insulating 4H SiC crystals
http://dx.doi.org/10.1103/PhysRevB.64.235202
E. N. Kalabukhova, S. N. Lukin, A. Saxler, W. C. Mitchel, S. R. Smith, J. S. Solomon, A. O. Evwaraye, Phys. Rev. B 64, 235202 (2001) 2006-03-10T16:36:23+09:00Electrical and multifrequency EPR study of nonstoichiometric defects in 4H-SiC
http://dx.doi.org/10.1016/j.physb.2003.09.047
E. N. Kalabukhova, S. N. Lukin, D. V. Savchenko and W. C. Mitchel, Physica B 340-342, 156 (2003) 2006-03-10T16:04:32+09:00240 GHz electron paramagnetic resonance studies of intrinsic defects in as-grown 4H SiC
http://dx.doi.org/10.1103/PhysRevB.68.012102
Valery V. Konovalov, Mary Ellen Zvanut, Johan van Tol, Phys. Rev. B 68, 12102 (2003) 2006-03-10T15:54:20+09:00The level position of a deep intrinsic defect in 4H-SiC studied by photoinduced electron paramagnetic resonance
http://dx.doi.org/10.1063/1.1432444
M. E. Zvanut and V. V. Konovalov, Appl. Phys. Lett. 80, 410 (2002) 2006-03-09T09:51:25+09:00Defects in high-purity semi-insulating SiC
http://esrlab.jp/div-media/defect/index.php?q=&material=&method=EPR&defect=semi-insulating&sb=u&id=2204#2204
2006-03-09T07:57:17+09:00