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- 1. Phys. Rev. B 77, 085120 (2008) , “Identification of the carbon antisite in SiC: EPR of 13C enriched crystals”, Pavel G. Baranov, Ivan V. Ilyin, Alexandra A. Soltamova, and Eugene N. MokhovAn electron paramagnetic resonance spectrum with axial symmetry along c axis, spin S=1/2 and strong hyperfine interaction with one carbon atom has been observed in neutron-irradiated and annealed 6H-SiC, 13C isotope enriched. The 13C concentration was... (Read more)
- 2. phys. stat. sol. (b) 245, 1298-1314 (2008) , “EPR identification of intrinsic defects in SiC”, J. Isoya, T. Umeda, N. Mizuochi, N. T. Son, E. Janzen, T. OhshimaThe structure determination of intrinsic defects in 4H-SiC, 6H-SiC, and 3C-SiC by means of EPR is based on measuring the angular dependence of the 29Si/13C hyperfine (HF) satellite lines, from which spin densities, sp-hybrid ratio, and p-orbital direction can be determined over... (Read more)Si SiC diamond| EPR Theory electron-irradiation thermal-meas./anneal-exp.| +1 -1 0(neutral) 1.0eV~ 13C 29Si C1h C3v Carbon Csi D2d EI5/6 HEI1 HEI9/10 P6/7 Silicon T1 Td Tv2a V1/2/3 Vc Vsi antisite dangling-bond mono(=1) motional-effect n-type p-type pair(=2) quartet semi-insulating spin-relaxation triplet vacancy .inp files: SiC/Baranov/Baranov_g.inp SiC/EI5_C1h/5.inp SiC/EI5_C3v/5.inp SiC/EI6_RT/6.inp SiC/HEI10/HEI10a.inp SiC/HEI10/HEI10b.inp SiC/HEI1_C1h/1.inp SiC/HEI9/HEI9a.inp SiC/HEI9/HEI9b.inp SiC/SI5_C1h/4.inp SiC/Ky2/Ky2.inp SiC/Tv2a/Main.INP SiC/Vsi-_II_4H/Main.INP SiC/Vsi-_II_6H/Main.INP SiC/Vsi-_I_4H/Main.INP SiC/Vsi-_I_6H/Main.INP | last update: Takahide Umeda
- 3. Appl. Phys. Lett. 90, 062113 (2007) , “Influence of growth conditions on irradiation induced defects in low doped 4H-SiC epitaxial layers”, I. Pintilie, U. Grossner, B. G. Svensson, K. Irmscher, and B. ThomasNitrogen doped 4H-SiC epitaxial layers were investigated by deep level transient spectroscopy after irradiation with 6 MeV electrons. The influence of C/Si ratio, N doping level, and growth rate on the behavior of the prominent Z1,2 and EH6,7 levels during... (Read more)
- 4. J. Appl. Phys. 101, 024324 (2007) , “Electron paramagnetic resonance in transition metal-doped ZnO nanowires”, A. O. Ankiewicz, M. C. Carmo, N. A. Sobolev, W. Gehlhoff, E. M. Kaidashev, A. Rahm, M. Lorenz, and M. GrundmannThe wide-band-gap zinc oxide-based diluted magnetic semiconductors currently attract considerable attention due to their possible use in spintronic devices. In this work, we studied ZnO nanowire samples synthesized on 10×10 mm2 a-plane sapphire substrates by high-pressure... (Read more)
- 5. J. Appl. Phys. 101, 013902 (2007) , “An electron paramagnetic resonance study of n-type Zn1−xMnxO: A diluted magnetic semiconductor”, A. Ben Mahmoud, H. J. von Bardeleben, J. L. Cantin, E. Chikoidze, and A. MaugerWe present the results of an electron paramagnetic resonance study of homogeneous single phase Zn1−xMnxO thin films with Mn concentrations varying between x=0.07 and x=0.34. Our results show antiferromagnetic (AF) coupling in the entire... (Read more)
- 6. J. Appl. Phys. 101, 013703 (2007) , “Electron spin resonance study of as-deposited and annealed (HfO2)x(SiO2)1−x high-κ dielectrics on Si”, B. B. Triplett, P. T. Chen, Y. Nishi, P. H. Kasai, J. J. Chambers, and L. ColomboElectron spin resonance measurements on 4 and 40 nm thick (HfO2)0.6(SiO2)0.4 and (HfO2)0.4(SiO2)0.6 high-κ films on (100)Si wafers detected Pb0 and Pb1... (Read more)
- 7. Phys. Rev. B 75, 245202 (2007) , “Identification of positively charged carbon antisite-vacancy pairs in 4H-SiC”, T. Umeda, J. Ishoya, T. Ohshima, N. Morishita, H. Itoh, and A. GaliAn antisite-vacancy pair and a monovacancy are a set of fundamental stable and/or metastable defects in compound semiconductors. Theory predicted that carbon antisite-vacancy pairs would be much more stable in p-type SiC than silicon vacancies and that they would be a common defect. However,... (Read more)
- 8. Phys. Rev. B 75, 085423 (2007) , “Room-temperature atmospheric oxidation of Si nanocrystals after HF etching”, X. D. Pi, L. Mangolini, S. A. Campbell, and U. KortshagenThe effect of HF etching of the silicon oxide shell covering the surface of Si nanocrystals (NCs) on the subsequent room-temperature atmospheric oxidation of Si-NCs has been investigated by means of photoluminescence measurements, Fourier transform infrared spectroscopy, and electron paramagnetic... (Read more)
- 9. Phys. Rev. B 75, 045107 (2007) , “Multiband effects in the electron spin resonance of Gd3+ in the intermediate-valence compound YbAl3 and its reference compound LuAl3”, R. R. Urbano, E. M. Bittar, M. A. Pires, L. Mendonça Ferreira, L. Bufaiçal, C. Rettori, P. G. Pagliuso, B. Magill, S. B. Oseroff, J. D. Thompson, and J. L. SarraoElectron spin resonance (ESR) results of Gd3+ in YbAl3 and LuAl3 are analyzed using a multiband (f-, d-, and p-type) model of correlated conduction electrons. The need for a multiband analysis of our results is based on the following... (Read more)
- 10. Phys. Rev. Lett. 98, 186804 (2007) , “Room-Temperature Electron Spin Dynamics in Free-Standing ZnO Quantum Dots”, William K. Liu, Kelly M. Whitaker, Alyssa L. Smith, Kevin R. Kittilstved, Bruce H. Robinson, and Daniel R. GamelinConduction band electrons in colloidal ZnO quantum dots have been prepared photochemically and examined by electron paramagnetic resonance spectroscopy. Nanocrystals of 4.6 nm diameter containing single S-shell conduction band electrons have g*=1.962 and a room-temperature... (Read more)
- 11. Phys. Rev. Lett. 98, 077601 (2007) , “Multiple-Pulse Coherence Enhancement of Solid State Spin Qubits”, W. M. Witzel and S. Das SarmaWe describe how the spin coherence time of a localized electron spin in solids, i.e., a solid state spin qubit, can be prolonged by applying designed electron spin resonance pulse sequences. In particular, the spin echo decay due to the spectral diffusion of the electron spin resonance frequency... (Read more)
- 12. Appl. Phys. Lett. 89, 112121 (2006) , “Nature and stability of the (100)Si/LaAlO3 interface probed by paramagnetic defects”, A. Stesmans, K. Clémer, V. V. Afanas'ev, L. F. Edge, and D. G. SchlomElectron spin resonance analysis of (100)Si/LaAlO3 structures reveals the absence of a Si/SiO2-type interface in terms of archetypal Si-dangling bond-type Si/SiO2 interface defects (Pb0,Pb1). With no... (Read more)
- 13. Appl. Phys. Lett. 89, 092120 (2006) , “Defect generation at SiO2/Si interfaces by low pressure chemical vapor deposition of silicon nitride”, Hao Jin, K. J. Weber, and P. J. SmithLow pressure chemical vapor deposition of Si3N4 on oxidized Si (111) surfaces causes a change in the properties of the dominant interface defect, the Pb center, observed by electron paramagnetic resonance. The change in the signature of the... (Read more)
- 14. Appl. Phys. Lett. 88, 092108 (2006) , “Hydrogen passivation of carbon Pb like centers at the 3C- and 4H-SiC/SiO2 interfaces in oxidized porous SiC”, J. L. Cantin, H. J. von Bardeleben, Yue Ke, R. P. Devaty, W. J. ChoykeThe effect of forming gas and vacuum annealing on the concentration of carbon dangling bond (PbC) centers at 3C- and 4H-SiC/SiO2 interfaces has been studied by electron paramagnetic resonance (EPR) spectroscopy. Our results show efficient passivation at 400 °C and... (Read more)
- 15. Appl. Phys. Lett. 88, 091912 (2006) , “Hydrogen-vacancy related defect in chemical vapor deposition homoepitaxial diamond films studied by electron paramagnetic resonance and cathodoluminescence”, N. Mizuochi, H. Watanabe, H. Okushi, S. Yamasaki, J. Niitsuma, T. SekiguchiHydrogen-vacancy related defect (H1) in chemical vapor deposition homoepitaxial diamond films has been investigated by electron paramagnetic resonance and cathodoluminescence. It is found that the concentration of H1 significantly decreases as the dilution... (Read more)
- 16. J. Appl. Phys. 100, 124315 (2006) , “Magnetic resonance study of Ni nanoparticles in single-walled carbon nanotube bundles”, A. A. Konchits, F. V. Motsnyi, Yu. N. Petrov, S. P. Kolesnik, V. S. Yefanov, M. L. Terranova, E. Tamburri, S. Orlanducci, V. Sessa, and M. RossiWe present a detailed study of the electron magnetic resonance (EMR) properties of Ni nanoparticles (NPs) placed in the bundles of single-walled carbon nanotubes produced by arc discharge with Ni catalyst. The behavior of EMR signals has been investigated in the 10–300 K temperature range for... (Read more)
- 17. J. Appl. Phys. 100, 094108 (2006) , “The effect of interfacial layer properties on the performance of Hf-based gate stack devices”, G. Bersuker, C. S. Park, J. Barnett, P. S. Lysaght, P. D. Kirsch, C. D. Young, R. Choi, B. H. Lee, B. Foran, K. van Benthem, S. J. Pennycook, P. M. Lenahan, and J. T. RyanThe influence of Hf-based dielectrics on the underlying SiO2 interfacial layer (IL) in high-k gate stacks is investigated. An increase in the IL dielectric constant, which correlates to an increase of the positive fixed charge density in the IL, is found to depend on the starting,... (Read more)
- 18. J. Appl. Phys. 99, 113520 (2006) , “Effects of hydrogen bond redistribution on photoluminescence of a-SiC:H films under thermal treatment”, A. V. Vasin, S. P. Kolesnik, A. A. Konchits, V. I. Kushnirenko, V. S. Lysenko, A. N. Nazarov, A. V. Rusavsky, and S. AshokHydrogenated amorphous silicon carbide (a-SiC:H) films have been deposited using magnetron sputtering technique. An integrated investigation of the effect of vacuum annealing temperature on photoluminescence properties and paramagnetic defects and its correlation with structural... (Read more)
- 19. J. Appl. Phys. 99, 073709 (2006) , “Optical and electron paramagnetic resonance spectroscopies of diffusion-doped Co2+:ZnSe”, Ming Luo, N. Y. Garces, N. C. Giles, Utpal N. Roy, Yunlong Cui, and Arnold BurgerThe efficacy of diffusing cobalt into window-grade polycrystalline ZnSe during high-temperature anneals has been studied. Absorption, photoluminescence (PL), time-resolved PL, and electron paramagnetic resonance (EPR) were used to characterize samples with cobalt concentrations ranging from... (Read more)
- 20. J. Phys. Chem. Solids 67, 789 (2006) , “Spectroscopic and magnetic studies of manganese ions in ZnO–Sb2O3–B2O3 glass system”, M. Srinivasa Reddy, G. Murali Krishna , N. VeeraiahZnO–Sb2O3–B2O3 glasses containing different concentrations of MnO ranging from 0 to 1.0 mol% were prepared. A number of studies, viz. optical absorption, infrared and ESR spectra and magnetic susceptibility, were carried out as a function of manganese ion concentration. The analysis of... (Read more)
- 21. Mater. Sci. Eng. B 126, 222-225 (2006) , “Magnetic properties of a new spintronic material—GaN:Fe”, H. Przybylińska, A. Wolos, M. Kiecana, M. Sawicki, T. Dietl, H. Malissa, C. Simbrunner, M. Wegscheider, H. Sitter, K. Rumpf, P. Granitzer, H. Krenn and W. JantschWe report on metal-organic chemical vapour deposition growth of GaN:Fe and its characterization by means of high-resolution X-ray diffraction, secondary ion mass spectroscopy, electron spin resonance, and magnetization measurements. Electron spin resonance studies demonstrate the existence of Fe in... (Read more)
- 22. Phys. Rev. B 74, 235201 (2006) , “Annealing of multivacancy defects in 4H-SiC”, W. E. Carlos, N. Y. Garces, E. R. Glaser, and M. A. FantonThe annealing behavior of defects observed in electron paramagnetic resonance (EPR) and photoluminescence (PL) is discussed. We consider the divacancy (the P6/P7 EPR centers) and a previously unreported EPR center that we suggest is a VC-VSi-VC... (Read more)
- 23. Phys. Rev. B 74, 214409 (2006) , “Hyperfine interaction of Er3+ ions in Y2SiO5: An electron paramagnetic resonance spectroscopy study”, O. Guillot-Noël, Ph. Goldner, Y. Le Du, E. Baldit, P. Monnier, and K. BencheikhElectron paramagnetic resonance (EPR) spectroscopy of rare earth ions in crystals is a powerful tool to analyze the hyperfine structure of the rare earth ground state. This can be useful for coherent spectroscopy and quantum information applications where the hyperfine structure of the electronic... (Read more)
- 24. Phys. Rev. B 74, 174122 (2006) , “Lithium colloids and color center creation in electron-irradiated Li2NH observed by electron-spin resonance”, F. Beuneu, P. Vajda, Y. Nakamori, and S. OrimoWe have irradiated Li2NH powder with MeV electrons at room temperature and investigated the introduced defects with electron spin resonance. Conduction electron spin resonance indicates the presence of nanosize metallic Li colloids seen as a Lorentzian line with a g=2.0023 and a... (Read more)
- 25. Phys. Rev. B 74, 165202 (2006) , “Structural and electronic properties of Fe3+ and Fe2+ centers in GaN from optical and EPR experiments”, E. Malguth, A. Hoffmann, W. Gehlhoff, O. Gelhausen, M. R. Phillips, and X. XuThis work provides a consistent picture of the structural, optical, and electronic properties of Fe-doped GaN. A set of high-quality GaN crystals doped with Fe at concentrations ranging from 5×1017 cm3 to 2×1020 cm3 is... (Read more)
- 26. Phys. Rev. B 74, 161203(R) (2006) , “Room-temperature manipulation and decoherence of a single spin in diamond”, R. Hanson, O. Gywat, and D. D. AwschalomWe report on room-temperature coherent manipulation of the spin of a single nitrogen-vacancy center in diamond and a study of its coherence as a function of magnetic field. We use magnetic resonance to induce Rabi nutations and apply a Hahn spin echo to remove the effect of low-frequency dephasing.... (Read more)
- 27. Phys. Rev. B 74, 134418 (2006) , “Electron spin resonance and its implication on the maximum nuclear polarization of deuterated solid target materials”, J. Heckmann, W. Meyer, E. Radtke, G. Reicherz, and S. GoertzESR spectroscopy is an important tool in polarized solid target material research, since it allows us to study the paramagnetic centers, which are used for the dynamic nuclear polarization (DNP). The polarization behavior of the different target materials is strongly affected by the properties of... (Read more)
- 28. Phys. Rev. B 74, 115203 (2006) , “From ferromagnetic to antiferromagnetic interactions in n-type Zn1–xMnxO: An electron paramagnetic resonance study”, A. Ben Mahmoud, H. J. von Bardeleben, J. L. Cantin, A. Mauger, E. Chikoidze, and Y. DumontContradictory results concerning the formation of a ferromagnetic state in Mn doped ZnO layers have been reported in the last years. We present the results of an electron paramagnetic resonance study on homogeneous single phase n-type conductive Zn1xMnxO... (Read more)
- 29. Phys. Rev. B 74, 115201 (2006) , “Magnetic circular dichroism spectra in a II-VI diluted magnetic semiconductor Zn1–xCrxTe: First-principles calculations”, Hongming Weng, Jinming Dong, Tomoteru Fukumura, Masashi Kawasaki, and Yoshiyuki KawazoeThe absorption and magnetic circular dichroism (MCD) spectra of Zn1xCrxTe for x=0.0625, 0.25, and 1.0 are studied using the first-principles method. The calculated MCD spectra are found to be well consistent with the experimental measurement at the... (Read more)
- 30. Phys. Rev. B 74, 100201(R) (2006) , “Direct spectroscopic observation of the atomic-scale mechanisms of clustering and homogenization of rare-earth dopant ions in vitreous silica”, Sabyasachi Sen, Rafail Rakhmatullin, Ruslan Gubaidullin, and Andreas PöpplStructural aspects of clustering of rare earth ions in oxide glasses have been studied for the last several years in relation to their applications in photonics. However, the mechanism of homogenization of the spatial distribution of rare earth ions by codoping, typically with Al or P, is still not... (Read more)
- 31. Phys. Rev. B 74, 054111 (2006) , “EPR investigation of iron-related centers in 57Fe-doped KTaO3”, P. G. Baranov, A. G. Badalyan, D. V. Azamat, V. A. Trepakov, A. P. Bundakova, E. A. Ruzanova, V. S. Vikhnin, H. Hesse, and S. E. KapphanThree dominant iron centers are studied in the as-grown 57Fe-doped single KTaO3 crystals. For each of the centers, which were labeled as rhombic FeTa3+ and two axial Fe-related centers FeK3+-OI and (Fe). The... (Read more)
- 32. Phys. Rev. B 73, 33201 (2006) , “Manganese on various lattice sites in (Ga,Mn)As investigated using electron paramagnetic resonance”, T. WeiersThe differences between variously doped and grown samples of manganese-doped GaAs have been studied and set in relation to the magnetic and electronic properties of these materials. For interion exchange and contrary to the resolved hyperfine and crystal field contributions from the ionized acceptor... (Read more)
- 33. Phys. Rev. B 73, 184105 (2006) , “Iron-oxygen vacancy defect association in polycrystalline iron-modified PbZrO3 antiferroelectrics: Multifrequency electron paramagnetic resonance and Newman superposition model analysis”, Hrvoje Metri, Rüdiger-A. Eichel, Klaus-Peter Dinse, Andrew Ozarowski, Johan van Tol, Louis Claude Brunel, Hans Kungl, Michael J. Hoffmann, Kristin A. Schönau, Michael Knapp, and Hartmut FuessBy utilizing multifrequency electron paramagnetic resonance (EPR) spectroscopy, the iron functional center in Fe3+-modified polycrystalline lead zirconate (PbZrO3) was studied. The single phase polycrystalline sample remained orthorhombic and antiferroelectric down to 20 K as... (Read more)
- 34. Phys. Rev. B 73, 115203 (2006) , “Thermal stability of gamma-irradiation-induced oxygen-deficient centers in silica”, S. Agnello and L. NuccioThe effects of isochronal thermal treatments on three -irradiation-induced point defects, named the E, ODC(II), and H(I) centers, are investigated in various types of commercial silica (a-SiO2). ODC(II) is investigated by means of photoluminescence spectroscopy,... (Read more)
- 35. Phys. Rev. B 73, 075201 (2006) , “Electron paramagnetic resonance and theoretical studies of shallow phosphorous centers in 3C-, 4H-, and 6H-SiC”, N. T. Son, A. Henry, J. Isoya, M. Katagiri, T. Umeda, A. Gali, E. JanzénContinuous-wave (cw) electron paramagnetic resonance (EPR) at both X-band and W-band frequencies, pulsed-EPR, and pulsed electron nuclear double resonance (ENDOR) were used to study phosphorus shallow donors in 3C-, 4H-, and 6H-SiC doped with phosphorus (P) during... (Read more)
- 36. Phys. Rev. Lett. 97, 256603 (2006) , “Spatial Extent of Wave Functions of Gate-Induced Hole Carriers in Pentacene Field-Effect Devices as Investigated by Electron Spin Resonance”, Kazuhiro Marumoto, Shin-ichi Kuroda, Taishi Takenobu,, and Yoshihiro IwasaAn electron spin resonance (ESR) method is applied to a pentacene field-effect device to investigate gate-induced hole carriers in such devices. Clear field-induced ESR signals are observed, demonstrating that all of the field-injected carriers have S=1/2 spins. Anisotropic ESR signals due to... (Read more)
- 37. Phys. Rev. Lett. 97, 176404 (2006) , “Stark Tuning of Donor Electron Spins in Silicon”, F. R. Bradbury, A. M. Tyryshkin, Guillaume Sabouret, Jeff Bokor, Thomas Schenkel, and S. A. LyonWe report Stark shift measurements for 121Sb donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on a Sb-implanted 28Si epilayer are used to apply the electric fields. Two quadratic Stark effects are resolved: a decrease of the... (Read more)
- 38. Phys. Rev. Lett. 97, 137206 (2006) , “Electron Spin Resonance of Proton-Irradiated Graphite”, Kyu Won Lee and Cheol Eui LeeIn the case of colossal magnetoresistance in the perovskite manganites, "double exchange" mediated by the itinerant spins is believed to play a key role in the ferromagnetism. In contrast, the conventional "Heisenberg" interaction, i.e., direct (unmediated) interaction between... (Read more)
- 39. Phys. Rev. Lett. 97, 135502 (2006) , “29Si Hyperfine Structure of the Eα Center in Amorphous Silicon Dioxide”, G. Buscarino, S. Agnello, and F. M. GelardiWe report a study by electron paramagnetic resonance on the Eα point defect in amorphous silicon dioxide (a-SiO2). Our experiments were performed on γ-ray irradiated oxygen-deficient materials and pointed out that the 29Si... (Read more)
- 40. Phys. Rev. Lett. 96, 55501 (2006) , “Divacancy in 4H-SiC”, N. T. Son, P. Carlsson, J. ul Hassan, E. Janzén, T. Umeda, J. Isoya, A. Gali, M. Bockstedte, N. Morishita, T. Ohshima, H. ItohElectron paramagnetic resonance and ab initio supercell calculations suggest that the P6/P7 centers, which were previously assigned to the photoexcited triplet states of the carbon vacancy-antisite pairs in the double positive charge state, are related to the triplet ground... (Read more)
- 41. Phys. Rev. Lett. 96, 17203 (2006) , “Magnetic Anisotropy of Co2+ as Signature of Intrinsic Ferromagnetism in ZnO:Co”, P. Sati, R. Hayn, R. Kuzian, S. Régnier, S. Schäfer, A. Stepanov, C. Morhain, C. Deparis, M. Laügt, M. Goiran, and Z. GolackiWe report on the magnetic properties of thoroughly characterized Zn1-xCoxO epitaxial thin films, with low Co concentration, x=0.0030.005. Magnetic and EPR measurements, combined with crystal field theory, reveal that isolated Co2+ ions in... (Read more)
- 42. Phys. Rev. Lett. 96, 145501 (2006) , “Identification of the Carbon Antisite-Vacancy Pair in 4H-SiC”, T. Umeda, N. T. Son, J. Isoya, E. Janzn, T. Ohshima, N. Morishita, H. Itoh, A. Gali, M. BockstedteThe metastability of vacancies was theoretically predicted for several compound semiconductors alongside their transformation into the antisite-vacancy pair counterpart; however, no experiment to date has unambiguously confirmed the existence of antisite-vacancy pairs. Using electron paramagnetic resonance and first principles calculations we identify the SI5 center as the carbon antisite-vacancy pair in the negative charge state (CSiVC-) in 4H-SiC. We suggest that this defect is a strong carrier-compensating center in n-type or high-purity semi-insulating SiC. (Read more)SiC| ENDOR EPR Theory electron-irradiation optical-spectroscopy thermal-meas./anneal-exp.| -1 -2 1.0eV~ 13C 29Si C1h C3v Carbon Csi EI5/6 HEI1 HEI5/6 Nitrogen P6/7 SI5 Silicon Vc antisite bistable/metastable dangling-bond n-type pair(=2) semi-insulating vacancy .inp files: SiC/SI5_C1h SiC/SI5_80K SiC/SI5_100K | last update: Takashi Fukushima
- 43. Physica B 376-377, 486 (2006) , “Preferential substitution of Fe on physically equivalent Ga sites in GaN”, W. Gehlhoff, D. Azamat, U. Haboeck, A. HoffmannThe EPR spectra of Fe3+ in high-quality thick freestanding hydride vapor phase grown GaN have been studied in the X- and Q-band. A complex resonance pattern with numerous lines of different intensities provided by three different defects is observed for these nearly stress-free iron-doped samples.... (Read more)
- 44. Physica B 376-377, 358-361 (2006) , “Pulsed EPR studies of Phosphorus shallow donors in diamond and SiC”, J. Isoya, M. Katagiri, T. Umeda, S. Koizumi, H. Kanda, N. T. Son, A. Henry, A. Gali, E. JanzénPhosphorus shallow donors having the symmetry lower than Td are studied by pulsed EPR. In diamond:P and 3C–SiC:P, the symmetry is lowered to D2d and the density of the donor wave function on the phosphorus atom exhibits a predominant p-character. In 4H–SiC:P with the site symmetry of... (Read more)
- 45. Physica B 373, 182-193 (2006) , “Electron–nuclear double resonance and dynamic nuclear polarization in GaAs in the regime of the quantum Hall effect”, E. Olshanetsky, J.D. Caldwell, A.E. Kovalev, C.R. Bowers, J.A. Simmons , J.L. RenoElectron spin resonance (ESR) and electron-nuclear double resonance experiments were performed in the 2D electron systems of GaAs/AlxGa1−xAs quantum well and heterojunction samples in the vicinity of the unity filling factor in the regime of the quantum Hall effect. As is well known, the ESR... (Read more)
- 46. Superlatt. Microstruct. 39, 247-256 (2006) , “Optical and morphological features of bulk and homoepitaxial ZnO”, R. Yakimova, G.R. Yazdi, N.T. Son, I. Ivanov, M. Syväjärvi, S. Sun, G. Tompa, A. Kuznetsov , B. SvenssonZnO substrate crystals from two different sources, and epitaxial layers have been studied by SEM, AFM, photoluminescence and EPR. Although fabricated by the same growth principle, i.e. the hydrothermal technique, the substrates differ in terms of purity and structural quality. In the PL spectra of... (Read more)
- 47. Thin Solid Films 496, 169-173 (2006) , “Green luminescence from Mn ions in ZnO–GeO2 glasses prepared by sol–gel method and their glass ceramics”, Tomoe Sanada, Kazuhiro Yamamoto, Noriyuki Wada , Kazuo KojimaZn2SiO4:Mn2+ is one of the green light luminants used for cathode ray tubes of televisions. Recently, optical materials emitting strong visible light under lower energy excitation have been expected. To obtain new luminants of high quality, we prepared Mn ion doped ZnO–GeO2 glasses and glass... (Read more)
- 48. AIP Conf. Proc. 772, 121 (2005) , “ESR Study of Zn-codoping Effect on the Luminescence Efficiency of the Er-2O Center in GaAs:Er,O”, M. Yoshida, K. Hiraka, H. Ohta, Y. Fujiwara, A. Koizumi, and Y. TakedaESR measurements of Zn-codoped GaAs:Er,O have been performed at 9.49 GHz. Several anisotropic ESR signals (A, B, and C) are observed. We found that the intensity of the C center decreases together with the decrease of the PL intensity by increasing the doping amount of Zn, while the changes of the... (Read more)
- 49. Appl. Phys. Lett. 87, 172108 (2005) , “Production of native donors in ZnO by annealing at high temperature in Zn vapor”, L. E. Halliburton, N. C. Giles, N. Y. Garces, Ming Luo, Chunchuan Xu, Lihai Bai, L. A. BoatnerZinc oxide crystals grown by the seeded chemical vapor transport method have been annealed in zinc vapor at 1100 °C for 30 min. These thermochemical reduction treatments produce a deep red coloration in the crystals and increase their n-type electrical conductivity. Electron paramagnetic... (Read more)
- 50. Appl. Phys. Lett. 87, 022903 (2005) , “Electron spin resonance investigation of oxygen-vacancy-related defects in BaTiO3 thin films”, V. V. Laguta, A. M. Slipenyuk, I. P. Bykov, M. D. Glinchuk, M. Maglione, D. Michau, J. Rosa, L. JastrabikThe Ti3+ center, based on a regular Ti site perturbed by an oxygen vacancy (VO), is identified by electron spin resonance (ESR) in textured BaTiO3 films. The center shows tetragonal symmetry along cubic 100 axes with g-factors: g=1.997,... (Read more)
- 51. Chem. Phys. Lett. 415, 337 (2005) , “No ferromagnetism in Mn doped ZnO semiconductors”, J. Alaria, P. Turek, M. Bernard, M. Bouloudenine, A. Berbadj, N. Brihi, G. Schmerber, S. Colis , A. DiniaPolycrystalline Zn1 − xMnxO was synthesized by co-precipitation method with xvarying between 0.01 and 0.10. Although X-ray diffraction patterns show a typical würtzite structure with no additional peaks for all samples, Raman spectroscopy indicates the appearance of an additional mode in... (Read more)
- 52. J. Appl. Phys. 97, 23909 (2005) , “Electron spin resonance study of Zn-codoping effect on the local structure of the Er-related centers in GaAs:Er,O”, Makoto Yoshida, Kensaku Hiraka, Hitoshi Ohta, Yasufumi Fujiwara, Atsushi Koizumi, Yoshikazu TakedaElectron spin resonance (ESR) measurements of Zn-codoped GaAs:Er,O grown by organometallic vapor phase epitaxy have been performed at 9.49 GHz. Several anisotropic ESR signals (named as A, B, and C) are observed. The angular and temperature dependences of the A, B, and C signals are quite... (Read more)
- 53. J. Magn. Magn. Mater. 302, 118 (2005) , “Magnetism origin of Mn-doped ZnO nanoclusters”, J.H. Li, D.Z. Shen, J.Y. Zhang, D.X. Zhao, B.S. Li, Y.M. Lu, Y.C. Liu , X.W. FanZnMnO nanoclusters were synthesized by the sol–gel method. The structural and magnetic characters were investigated. The XRD spectrum shows ZnMnO nanoclusters are hexagonal wurtzite structures and a small quantity of ZnMn2O4 phase is also present in the spectrum. The percentages of Zn and Mn... (Read more)
- 54. J. Quant. Spectrosc. Radiat. Transfer 90, 97-113 (2005) , “Spectroscopic investigations on ZnF2–MO–TeO2 (MO=ZnO, CdO and PbO) glasses doped with chromium ions”, C. Laxmi Kanth, B. V. Raghavaiah, B. Appa Rao , N. VeeraiahDifferential scanning calorimetric studies, spectroscopic studies (viz., optical absorption, ESR, infrared spectra) and thermoluminescence studies of ZnF2–MO–TeO2 (MO=ZnO, CdO and PbO) glasses doped with different concentrations of chromium ions have been investigated. Results have... (Read more)
- 55. Mater. Sci. Eng. C 25, 614-617 (2005) , “Incorporation of cobalt into ZnO nanoclusters”, Igor Ozerov, Françoise Chabre and Wladimir MarineThe structural, optical and magnetic properties of nanostructured ZnO films co-doped with cobalt and aluminium have been studied. The nanocrystalline films, with cluster sizes in range 50–100 nm, were deposited by pulsed laser ablation in a mixed atmosphere of oxygen and helium. The... (Read more)
- 56. Microelectron. Reliability 45, 57 (2005) , “Characterization of interface defects related to negative-bias temperature instability SiON/Si<100> systems ”,Interface defects related to negative-bias temperature instability (NBTI) in an ultrathin plasma-nitrided SiON/ Si<100> system were characterized by using conductance–frequency measurements, electron-spin resonance measure- ments, and synchrotron radiation X-ray photoelectron spectroscopy. It was confirmed that NBTI is reduced by using D2-annealing instead of the usual H2-annealing. Interfacial Si dangling bonds (Pb1 and Pb0 centers) were detected in a sample subjected to negative-bias temperature stress (NBTS). Although we suggest that NBTS also generates non-Pb defects, it does not seem to generate nitrogen dangling bonds. These results show that NBTI of the plasma-nitrided SiON/Si system is predominantly due to Pb depassivation. Plasma nitridation was also found to increase the Pb1/Pb0 density ratio, modify the Pb1 defect structure, and increase the latent interface trap density by generating Si suboxides at the interface. These changes are likely to be the causes of NBTI in ultrathin plasma-nitrided SiON/Si systems. (Read more)
- 57. Phys. Rev. B 72, 235208 (2005) , “Spin multiplicity and charge state of a silicon vacancy (TV2a) in 4H-SiC determined by pulsed ENDOR”, N. Mizuochi, S. Yamasaki, H. Takizawa, N. Morishita, T. Ohshima, H. Itoh, T. Umeda, and J. IsoyaIn this paper, we unambiguously re-determine the spin multiplicity of TV2a by pulsed electron nucleus double resonance technique. The TV2a center is one of the most commonly observed defects in 4H-SiC, and its origin was... (Read more)
- 58. Phys. Rev. B 72, 115205 (2005) , “Defect identification in the AsGa family in GaAs”, H. Overhof and J.-M. SpaethAb initio total-energy calculations are presented for intrinsic defects in GaAs with a particular emphasis on hyperfine interactions in order to clarify the atomic structure of the various AsGa-related defects. For the AsGa-X2 defect complex the... (Read more)
- 59. Phys. Rev. B 71, 193202 (2005) , “EPR and theoretical studies of negatively charged carbon vacancy in 4H-SiC”, T. Umeda, Y. Ishitsuka, J. Isoya, N. T. Son, E. Janzén, N. Morishita, T. Ohshima, H. Itoh, A. GaliCarbon vacancies (VC) are typical intrinsic defects in silicon carbides (SiC) and so far have been observed only in the form of positively charged states in p-type or semi-insulating SiC. Here, we present electron-paramagnetic-resonance (EPR) and photoinduced EPR (photo-EPR)... (Read more)
- 60. Phys. Rev. B 71, 125202 (2005) , “Positively charged carbon vacancy in three inequivalent lattice sites of 6H-SiC: Combined EPR and density functional theory study”, V. Ya. Bratus', T. T. Petrenko, S. M. Okulov, and T. L. PetrenkoThe Ky1, Ky2, and Ky3 centers are the dominant defects produced in the electron-irradiated p-type 6H-SiC crystals. The electron paramagnetic resonance study of these defects has been performed in the temperature range of 4.2300 K at... (Read more)
- 61. Phys. Rev. B 71, 115204 (2005) , “Electron Spin Resonance Study of Paramagnetic Centers in Neutron-Irradiated Heat-Treated Silicon”, D. Pierreux and A. StesmansElectron spin resonance (ESR) was used to study neutron-induced defects in silicon as functions of anneal temperature Tan. For Tan below 200 °C, the ESR response is dominated by the Si-P3 and Si-P6 spectra, as observed before. At Tan=200 ... (Read more)
- 62. Semiconductors 39, 493 (2005) , “Magnetic Ordering Effects in Heavily Doped GaAs:Fe Crystals”, B. P. Popov, V. K. Sobolevski?, E. G. Apushkinski?, V. P. Savel'evThe exchange coupling of Fe centers in GaAs crystals is studied by electron spin resonance (ESR). Transitions to a superparamagnetic state and to an impurity ferromagnetism domain are analyzed. A study of a system of single-domain magnetically ordered regions in GaAs:Fe with the transition to a ferromagnetic state occurring at the temperature T C1 = 460 K is described. It is shown that impurity ferromagnetism with a transition temperature T C2 of 60 K in a disordered system of Fe centers randomly distributed among superparamagnetic regions exists in GaAs:Fe. (Read more)
- 63. Spectrochim. Acta A. 61, 2595-2602 (2005) , “VO2+ ions in zinc lead borate glasses studied by EPR and optical absorption techniques”, P. Giri Prakash , J. Lakshmana RaoElectron paramagnetic resonance (EPR) and optical absorption spectra of vanadyl ions in zinc lead borate (ZnO–PbO–B2O3) glass system have been studied. EPR spectra of all the glass samples exhibit resonance signals characteristic of VO2+ ions. The values of spin-Hamiltonian parameters... (Read more)
- 64. Superlatt. Microstruct. 38, 413-420 (2005) , “EPR study on magnetic Zn1−xMnxO”, Mariana Diaconu, Heidemarie Schmidt, Andreas Pöppl, Rolf Böttcher, Joachim Hoentsch, Andreas Rahm, Holger Hochmuth, Michael Lorenz ,Marius GrundmannDiluted magnetic semiconductors (DMS), systems formed by replacing cations of the host semiconductor material with transition-metal ions, are developed for further use in spintronics. A good combination as a DMS is Zn1−xMnxO due to the ZnO wide band gap (3.37 eV) and the matching ionic... (Read more)
- 65. Appl. Phys. Lett. 85, 1601 (2004) , “Different origins of visible luminescence in ZnO nanostructures fabricated by the chemical and evaporation methods”, D. Li, Y. H. Leung, A. B. Djurisic, Z. T. Liu, M. H. Xie, S. L. Shi, S. J. Xu, W. K. ChanWe prepared ZnO nanostructures using chemical and thermal evaporation methods. The properties of the fabricated nanostructures were studied using scanning electron microscopy, x-ray diffraction, photoluminescence, and electron paramagnetic resonance (EPR) spectroscopy. It was found that the... (Read more)
- 66. Appl. Phys. Lett. 84, 2635 (2004) , “Visible photoluminescence in ZnO tetrapod and multipod structures”, Aleksandra B. Djurisic, Yu Hang Leung, Wallace C. H. Choy, Kok Wai Cheah, Wai Kin ChanThe properties of ZnO tetrapod and multipod structures were investigated using scanning electron microscopy, x-ray diffraction, photoluminescence (PL), and electron paramagnetic resonance (EPR) spectroscopy. While there is relationship between g = 1.96 EPR and green PL in some of the samples,... (Read more)
- 67. J. Appl. Phys. 96, 4189 (2004) , “Electron spin resonance study of GaAs:Er,O grown by organometallic vapor phase epitaxy”, Makoto Yoshida, Kensaku Hiraka, Hitoshi Ohta, Yasufumi Fujiwara, Atsushi Koizumi, Yoshikazu TakedaElectron spin resonance (ESR) measurements of GaAs:Er,O grown by organometallic vapor phase epitaxy have been performed at 9.49 GHz from 4.5 to 13 K. Several anisotropic ESR signals (A, B, C, and D) are observed, which is consistent with the previous reports. We... (Read more)
- 68. J. Appl. Phys. 96, 2406-2408 (2004) , “Annealing behavior of the carbon vacancy in electron-irradiated 4H-SiC”, Z. Zolnai, N. T. Son, C. Hallin, and E. JanzénElectron paramagnetic resonance (EPR) was used to study the annealing behavior of the positively charged carbon vacancy (EI5 center) in electron-irradiated 4H-SiC. At ~1000 °C the EPR signal of the defect starts decreasing gradually. Clear ligand hyperfine structure is still observed after... (Read more)
- 69. J. Appl. Phys. 95, 4096 (2004) , “Nitridation effects on Pb center structures at SiO2/Si„(100) interfaces ”,Interfacial defect structures of NO-nitride oxide on Si(100) were characterized by electron spin resonance spectroscopy. We confirmed that the effective g values of the Pb1 center are affected by interfacial nitridation even at a small nitrogen concentration of 5 at. %, while those of the Pb0 center proved to be unchanged. We observed that the shifted Pb1 line appeared gradually with interfacial nitrogen concentration, which suggests that the nitrogen-induced modified structure substitutes for the original Pb1 structure. Angular variations of the shifted Pb1 lines were also significantly different from those of pure oxide. Based on our analysis, we attributed the g value shift of the Pb1 center to dangling bond tilting, caused by the displacement of nearest-neighbor Si atoms. (Read more)
- 70. J. Appl. Phys. 95, 1884-1887 (2004) , “Thermal activation of Mg-doped GaN as monitored by electron paramagnetic resonance spectroscopy”, M. E. Zvanut, D. M. Matlock, R. L. Henry, Daniel Koleske, Alma WickendenThe microscopic process involved with thermal activation of the Mg acceptors in GaN epitaxial films is investigated using electron paramagnetic resonance (EPR) spectroscopy. Samples were heat treated in dry N2 for 30 min at temperatures between 200 and 1000 °C. Below 850 °C, the... (Read more)
- 71. J. Cryst. Growth 264, 1-6 (2004) , “Ammonolysis of Ga2O3 and its application to the sublimation source for the growth of GaN film”, Y. J. Park , C. S. Oh , T. H. Yeom, Y. M. YuWe have observed the nagnetic resonance of conduction electrons in n-type indium antimonide, by the "heating" of the electron kinetic-energy temperature via the slsctron spins. This is the first direct evidence suggesting a contribution of spin-orbit coupling to relaxation in this system. In a steady-state spin-resonance experiment, a power PS=(M0=MZ)H/T1 is transferred to the systems(reservoirs) towards which the spins relax. Here, M0 is the equilibrium magnetization, MZ the component of the magnetization along the magnetic field H, and T1 the relaxation time. The reservoir of interest in our case is the kinetic energy of the eledtrons, and this is detected by an increase in the mobility μ. To our knowledge. this is the first observation of the power flow, due to relaxation, from the spins to a reservoir,applied to the ditection of magnetic resonance of conduction-electron spins. It differs in principle from usual spin-resonance observation methods, which are based on electromagnetic interactions of the spin system, such as the voltage induced in a resonator by the rotating magnetic moment, or again such as power absorption PS=MyHx from the rotating field Hx by the out-of- phase component My.Besides providing information on the relaxation mechanism, the present method (that we call "ralaxation" method) should also in some cases by much more sensitive than the usual "electromagnetic" detection methods. (Read more)
- 72. J. Phys. Chem. Solids 65, 639-645 (2004) , “Carbothermally-assisted aerosol synthesis of semiconducting materials in the system GaN/Mn”, Jerzy F. Janik , Mariusz Dryga , Cezary Czosnek , Maria Kamiska , Maria Palczewska and Robert T. PaineAerosol-assisted vapor phase synthesis aimed at preparation of magnetic semiconductor nanopowders of Ga1−xMnxN is carried out both from aqueous and methanol solution mixtures of gallium nitrate and manganese (II) nitrate. After an additional pyrolysis at 1000 °C under an ammonia flow,... (Read more)
- 73. Mater. Sci. Eng. A 375-377, 620-624 (2004) , “Evolution of the microstructure of disperse ZnO powders obtained by the freeze-drying method”, Z. V. Marinkovic, O. Milosevic, M. V. Nikolic, M. G. Kakazey, M. V. Karpec, T. V. Tomila , M. M. RisticFreeze-drying, as a cryochemical powder processing method is applied in the synthesis of ZnO submicrometer to nanosized powders. The process involves rapid freezing of the sprayed precursor solution, drying under vacuum by sublimation of the solvent and salt decomposition to oxide by thermal... (Read more)
- 74. Mater. Sci. Forum 457-460, 465 (2004) , “EPR and pulsed ENDOR study of EI6 and related defects in 4H-SiC”, T. Umeda, Y. Ishitsuka, J. Isoya, N. Morishita, T. Ohshima, T. Kamiya
- 75. Mater. Sci. Forum 457-460, 437 (2004) , “Defects in high-purity semi-insulating SiC”, N. T. Son, B. Magnusson, Z. Zolnai, A. Ellison, E. Janzén
- 76. Phys. Rev. B 70, 245204 (2004) , “Silicon vacancy annealing and DI luminescence in 6H-SiC”, M. V. B. Pinheiro, E. Rauls, U. Gerstmann, S. Greulich-Weber, H. Overhof, and J.-M. SpaethCombining electron paramagnetic resonance measurements with ab initio calculations, we identify the VCCSi(SiCCSi) complex as a second annealing product of the silicon vacancy via an analysis of resolved carbon hyperfine interactions and of... (Read more)
- 77. Phys. Rev. B 70, 235212 (2004) , “EPR and theoretical studies of positively charged carbon vacancy in 4H-SiC”, T. Umeda, J. Isoya, N. Morishita, T. Ohshima, T. Kamiya, A. Gali, P. Deák, N. T. Son, E. JanzénThe carbon vacancy is a dominant defect in 4H-SiC, and the "EI5" electron-paramagnetic-resonance (EPR) spectrum originates from positively charged carbon vacancies (VC+) at quasicubic sites. The observed state for EI5, however, has been attributed to a... (Read more)
- 78. Phys. Rev. B 70, 193207 (2004) , “Hyperfine interaction of the nitrogen donor in 4H-SiC”, N. T. Son, E. Janzén, J. Isoya, S. YamasakiShallow N donors in n-type 4H-SiC were studied by electron paramagnetic resonance (EPR) and electron nuclear double resonance (ENDOR). For the N donor at the cubic site (Nk) in 4H-SiC, the hyperfine (hf) constants of the interaction with the nearest-neighbor... (Read more)
- 79. Phys. Rev. B 70, 085202 (2004) , “Reassignment of phosphorus-related donors in SiC”, E. Rauls, M. V. B. Pinheiro, S. Greulich-Weber, and U. GerstmannCombining efficient density-functional based tight-binding molecular dynamics with ab initio calculations, we show that despite higher formation energies the incorporation of phosphorus at the carbon sublattice is favored by kinetic effects during the annealing processes. Based on the... (Read more)
- 80. Phys. Rev. B 69, 45208 (2004) , “Intrinsic defects in GaN. II. Electronically enhanced migration of interstitial Ga observed by optical detection of electron paramagnetic resonance”, P. Johannesen, A. Zakrzewski, L. S. Vlasenko, G. D. Watkins, Akira Usui, Haruo Sunakawa, Masashi MizutaOptical excitation at 1.7 K with 364-nm laser light produces partial annealing recovery of the damage produced in GaN by 2.5-MeV electron irradiation in situ at 4.2 K. Observed is a reduction in the irradiation-produced 0.95-eV photoluminescence (PL) band, recovery in the visible... (Read more)
- 81. Phys. Rev. B 69, 45207 (2004) , “Intrinsic defects in GaN. I. Ga sublattice defects observed by optical detection of electron paramagnetic resonance”, K. H. Chow, L. S. Vlasenko, P. Johannesen, C. Bozdog, G. D. Watkins, Akira Usui, Haruo Sunakawa, Chiaki Sasaoka, Masashi MizutaIrradiation of GaN by 2.5-MeV electrons in situ at 4.2 K produces a broad photoluminescence (PL) band centered at 0.95 eV. Optical detection of electron paramagnetic resonance (ODEPR) in the band reveals two very similar, but distinct, signals, L5 and L6, which we identify as interstitial... (Read more)
- 82. Phys. Rev. B 69, 121201(R) (2004) , “EPR identification of two types of carbon vacancies in 4H-SiC”, T. Umeda, J. Isoya, N. Morishita, T. Ohshima, and T. KamiyaThe EI5 and EI6 centers are typical intrinsic defects in radiation-damaged and semi-insulating 4H-SiC. So far, their origins have been assigned to positively charged carbon vacancies (VC+) and silicon antisites (SiC+), respectively. However,... (Read more)
- 83. Phys. Rev. B 69, 115210 (2004) , “Optical and magnetic properties of Mn in bulk GaN”, A. Wolos, M. Palczewska, M. Zajac, J. Gosk, M. Kaminska, A. Twardowski, M. Bockowski, I. Grzegory, S. PorowskiWe report results of electron paramagnetic resonance, magnetization, and optical absorption studies of bulk GaN crystals doped with Mn and, for some samples, codoped with Mg acceptor. The experiments performed show that the charge state of the Mn ion in GaN depends on the Fermi level position in the... (Read more)
- 84. Phys. Rev. Lett. 92, 135502 (2004) , “Hydrogen Incorporation in Diamond: The Vacancy-Hydrogen Complex”, C. Glover, M. E. Newton, P. M. Martineau, S. Quinn, D. J. TwitchenWe report the identification of the vacancy-hydrogen complex in single crystal diamond synthesized by chemical vapor deposition. The S = 1 defect is observed by electron paramagnetic resonance in the negative charge state. The hydrogen atom is bonded to one of the carbon atoms neighboring the... (Read more)
- 85. Phys. Rev. Lett. 92, 105505 (2004) , “In situ ESR Observation of Interface Dangling Bond Formation Processes During Ultrathin SiO2 Growth on Si(111)”, W. Futako, N. Mizuochi, and S. YamasakiWe report the formation processes of interface dangling bonds (Pb centers) during initial oxidation of a clean Si(111) surface using an ultrahigh-vacuum electron-spin-resonance technique. At the oxidation of one or two Si layer(s), the Pb center... (Read more)
- 86. Phys. Rev. Lett. 92, 015502 (2004) , “Identification of the Carbon Dangling Bond Center at the 4H–SiC/SiO2 Interface by an EPR Study in Oxidized Porous SiC”, J. L. Cantin, H. J. von Bardeleben, Y. Shishkin, Y. Ke, R. P. Devaty, and W. J. ChoykeWe report the observation of a paramagnetic interface defect in thermally oxidized porous n-type doped 4HSiC/SiO2. Based on its axial symmetry and resolved hyperfine interactions it is attributed to an sp3 carbon dangling bond center situated... (Read more)
- 87. Physica E 21, 928-932 (2004) , “Electron spin resonance and nuclear spin pumping in 2DEG quantum Hall system”, S. Teraoka , A. Numata , S. Amaha , K. Ono , S. TaruchaWe prepare a microwave electron spin resource (ESR) cavity for detecting a response from a 2DEG in an n-AlGaAs/GaAs. The response is obtained as a change in the longitudinal resistance (ΔÏxx) in v=3 quantum Hall region, particularly as a peak in ΔÏxx for resonance. We use the data of ESR to evaluate the g-factor and the lower bound for dephasing time. The resonance magnetic field suffers from nuclear spin effects via the hyperfine coupling, resulting in the ESR peak shift. We find the ESR peak shift or Overhauser shift decays with two time constants, suggesting the existence of two different origins for the relaxation. (Read more)
- 88. Rev. Sci. Instrum. 75, 4781 (2004) , “W-band Fabry–Pérot microwave reasonators for optical detected electron paramagnetic resonance and electron nuclear double resonance of paramagnetic defects in solids”, I. Tkach, U. Rogulis, S. Greulich-Weber, and J.-M. SpaethThe designs of W-band (~95 GHz) FabryPérot microwave resonators for optically detected electron paramagnetic resonance (ODEPR) and electron nuclear double resonance (ODENDOR) as well as the ODEPR/ODENDOR spectrometer are described. The FabryPérot resonator was... (Read more)
- 89. Appl. Phys. Lett. 83, 3407-3409 (2003) , “Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si”, A. Y. Kang, P. M. Lenahan, J. F. Conley Jr.We observed two paramagnetic defects in thin films of HfO2 on silicon with electron spin resonance. Both appear after photoinjecting electrons into the dielectric. Strong spectroscopic evidence links one spectrum to an O2-" align="middle"> defect. A second spectrum is... (Read more)
- 90. Appl. Phys. Lett. 82, 3677-3679 (2003) , “Interface defects responsible for negative-bias temperature instability in plasma-nitrided SiON/Si(100) systems”, Shinji Fujieda, Yoshinao Miura, and Motofumi SaitohInterface defects generated by negative-bias temperature stress (NBTS) in an ultrathin plasma- nitrided SiON/Si(100) system were characterized by using D2 annealing, conductance-frequency measurements, and electron-spin resonance measurements. D2 annealing was shown to lower... (Read more)
- 91. J. Appl. Phys. 94, 519-524 (2003) , “Molecular nitrogen (N2-" align="middle">) acceptors and isolated nitrogen (N–) acceptors in ZnO crystals”, N. Y. Garces, Lijun Wang, N. C. Giles, L. E. Halliburton, G. Cantwell, D. B. EasonElectron paramagnetic resonance (EPR) has been used to investigate molecular nitrogen and isolated nitrogen acceptors in single crystals of ZnO. These samples were grown by the seeded chemical vapor transport method with N2 added to the gas stream. A five-line EPR spectrum is observed at... (Read more)
- 92. J. Appl. Phys. 93, 9697-9702 (2003) , “Growth and characterization of GaN:Mn epitaxial films”, T. Graf, M. Gjukic, M. Hermann, M. S. Brandt, M. Stutzmann, L. Görgens, J. B. Philipp, O. AmbacherThe oxidation states of Mn in epitaxial GaN films grown by plasma induced molecular beam epitaxy were investigated by electron spin resonance (ESR), elastic recoil detection, superconducting quantum interference device magnetization, and photothermal deflection spectroscopy measurements. Comparison... (Read more)
- 93. J. Phys. Chem. Solids 64, 1027-1035 (2003) , “Optical absorption and fluorescence properties of Er3+ ion in MO–WO3–P2O5 glasses”, P. Subbalakshmi , N. VeeraiahTungsten phosphate glasses mixed with the three different modifier oxides, viz. PbO, ZnO and CaO doped with Er2O3 were prepared. The glasses were characterised by X-ray diffraction spectra, electron microscopy and differential thermal analysis. Optical absorption and photoluminescence spectra of... (Read more)
- 94. Micro. Eng. 66, 59-64 (2003) , “Magnetic resonance studies on ZnO nanocrystals”, H. Zhou, A. Hofstaetter, D. M. Hofmann and B. K. MeyerZnO nanocrystals with diameters ranging from 4 to 50 nm were prepared via a wet chemical method and post-growth annealing treatments. The electron paramagnetic resonance (EPR) spectra of the nanocrystals show the resonance of electron centers with g-value close to that of the shallow donors in bulk... (Read more)
- 95. Nucl. Instrum. Methods Phys. Res. B 206, 965 (2003) , “ESR characterization of activation of implanted phosphorus ions in silicon carbide”, J. Isoya, T. Ohshima, A. Ohi, N. Morishita and H. ItohPhosphorus ion implantations of 6H-SiC in the mean phosphorus concentration of the implanted layer of 1 × 1018 cm−3 were performed both at multi-fold energy between 9 and 21 MeV and at 340 keV. In the high-energy implantations at room temperature, 400, 800 and 1200 °C and in the 340... (Read more)
- 96. Phys. Rev. B 68, 193204 (2003) , “Arsenic-antisite defect in GaAs: Multiplicity of charge and spin states”, D. J. ChadiWe find that the As-antisite defect in GaAs which is the source of the stable EL2 and metastable EL2* centers can exist in at least eight different combinations of charge and structural states, twice as many as currently envisaged. In particular, results from first-principles... (Read more)
- 97. Phys. Rev. B 68, 165206 (2003) , “EPR studies of the isolated negatively charged silicon vacancies in n-type 4H- and 6H-SiC: Identification of C3v symmetry and silicon sites”, N. Mizuochi, S. Yamasaki, H. Takizawa, N. Morishita, T. Ohshima, H. Itoh, and J. IsoyaThe isolated negatively charged silicon vacancy (VSi-" align="middle">) in the hexagonal lattices of 4H- and 6H-SiC has been studied by electron paramagnetic resonance (EPR). The local structure was suggested to have Td symmetry from the... (Read more)
- 98. Phys. Rev. B 68, 12102 (2003) , “240 GHz electron paramagnetic resonance studies of intrinsic defects in as-grown 4H SiC”, Valery V. Konovalov, Mary Ellen Zvanut, Johan van Tol240 GHz electron paramagnetic resonance (EPR) measurements of as-grown nominally semi-insulating 4H SiC detected two well-separated centers ID1 and ID2. The EPR parameters of ID1 and ID2 coincide with that of EI5 and EI6 centers previously detected in 2-MeV electron-irradiated p-type... (Read more)
- 99. Phys. Rev. B 67, 33301 (2003) , “Electron spin coherence in semiconductors: Considerations for a spin-based solid-state quantum computer architecture”, Rogerio de Sousa and S. Das SarmaWe theoretically consider coherence times for spins in two quantum computer architectures, where the qubit is the spin of an electron bound to a P donor impurity in Si or within a GaAs quantum dot. We show that low-temperature decoherence is dominated by spin-spin interactions, through spectral... (Read more)
- 100. Phys. Rev. B 67, 165325 (2003) , “Temperature dependence and mechanism of electrically detected ESR at the v=1 filling factor of a two-dimensional electron system”, Eugene Olshanetsky, Joshua D. Caldwell, Manyam Pilla, Shu-chen Liu, Clifford R. Bowers, Jerry A. Simmons, John L. RenoElectrically detected electron spin resonance (EDESR) signals were acquired as a function of temperature in the 0.34.2 K temperature range in an AlGaAs/GaAs multiple-quantum-well sample at the = 1 filling factor at 5.7 T. In the particular sample studied, the linewidth is approximately... (Read more)
- 101. Phys. Rev. B 67, 165215 (2003) , “Spin resonance investigations of Mn2+ in wurtzite GaN and AlN films”, T. Graf, M. Gjukic, M. Hermann, M. S. Brandt, M. Stutzmann, O. AmbacherHigh quality Mn-doped GaN and AlN films grown by molecular beam epitaxy have been investigated with X-band electron spin resonance (ESR). The observed resonance patterns are well described by the spin Hamiltonian for isolated 55Mn2+ centers with electronic spin S... (Read more)
- 102. Phys. Rev. B 67, 125207 (2003) , “Silicon and carbon vacancies in neutron-irradiated SiC: A high-field electron paramagnetic resonance study”, S. B. Orlinski, J. Schmidt, E. N. Mokhov, P. G. BaranovElectron-paramagnetic-resonance (EPR) and electron-spin-echo (ESE) studies have been performed that show that isolated VSi-, VSi0, and VC vacancies are the dominant intrinsic paramagnetic defects in SiC treated by room-temperature neutron... (Read more)
- 103. Phys. Rev. Lett. 90, 185507 (2003) , “Hydrogen Incorporation in Diamond: The Nitrogen-Vacancy-Hydrogen Complex”, C. Glover, M. E. Newton, P. Martineau, D. J. Twitchen, J. M. BakerWe report the identification of the nitrogen-vacancy-hydrogen complex in a freestanding nitrogen-doped isotopically engineered single crystal diamond synthesized by chemical vapor deposition. The hydrogen atom is located in the vacancy of a nearest-neighbor nitrogen-vacancy defect and appears to be... (Read more)
- 104. Physica B 340-342, 903-907 (2003) , “Pulsed EPR studies of shallow donor impurities in SiC”, J. Isoya, T. Ohshima, N. Morishita, T. Kamiya, H. Itoh, S. YamasakiSpin-lattice relaxation time (T1) and phase memory time (TM) of shallow donors in 3C-, 4H- and 6H-SiC have been measured in time domain by using pulsed EPR technique. The temperature dependence of T1 suggests that the Orbach process should be frozen at relatively high temperatures. Shallow donors in SiC are promising in attaining a sufficiently long phase memory time at temperatures much higher than Si:P. (Read more)
- 105. Physica B 340-342, 156 (2003) , “Electrical and multifrequency EPR study of nonstoichiometric defects in 4H-SiC”, E. N. Kalabukhova, S. N. Lukin, D. V. Savchenko and W. C. MitchelTwo paramagnetic intrinsic defects P and ND1 have been studied in both C-rich n-type 4H-SiC and undoped semi-insulating (s.i.) 4H-SiC in the dark and under illumination of the s.i. sample with light at 140 and 37 GHz in the temperature interval from 4.2 to 77 K. Photo EPR and Hall effect... (Read more)
- 106. Physica B 340-342, 15-24 (2003) , “Defects in SiC”, E. Janzén, I. G. Ivanov, N. T. Son, B. Magnusson, Z. Zolnai, A. Henry, J. P. Bergman, L. Storasta, F. CarlssonRecent results from studies of shallow donors, pseudodonors, and deep level defects in SiC are presented. The selection rules for transitions between the electronic levels of shallow donors in 4H–SiC in the dipole approximation are derived and the ionization energy for the N donor at... (Read more)
- 107. Physica E 17, 320-321 (2003) , “Temperature dependence of electrically detected ESR at filling factor ν=1 in a 2DEG”, Eugene Olshanetsky, Manyam Pilla, Joshua D. Caldwell, Clifford R. Bowers, Jerry A. Simmons and John L. RenoElectrically detected electron spin resonance (ESR) was measured as a function of temperature for 0.3–4.2 K in a AlGaAs/GaAs multiple quantum well sample at filling factor ν=1. The ESR amplitude exhibits a maximum at about 2.2 K and vanishes with increased or decreased temperature. To... (Read more)
- 108. Polyhedron 22, 225-233 (2003) , “Study on guanidino–carboxylate interactions in copper(II) ternary complexes of guanidinoacetic acid with glutamic and aspartic acids”, Jussara Lopes de Miranda and Judith FelcmanThe possibility of occurrence of biological relevant guanidino–carboxylate interactions was investigated in ternary systems involving guanidinoacetic (Gaa) and glutamic acid (Glu), aspartic acid (Asp) or glycine (Gly). The study was done in solution using potentiometry, ultraviolet visible... (Read more)
- 109. Semiconductors 37, 918 (2003) , “The Relaxation of the Neutral State of Manganese in Gallium Arsenide”, V. F. Masterov, K. F. Shtel'makh, V. P. Maslov, S. B. Mikhrin, B. E. SamorukovResults of investigations of the longitudinal magnetic relaxation of the neutral state of the Mn0 center in GaAs are presented. Relaxation mechanisms were determined from the broadening of the electron-spinresonance line in the temperature range of 3.4–8.2 K and from the variation in the nuclear relaxation rate in the range of 36–310 K. The nuclear relaxation investigation demonstrates that the electron relaxation is governed by the interaction between lattice vibrations and local vibrations of the center. This allows one to represent the electron relaxation at low temperatures as the consequence of anharmonicity of local vibrations of the electron dipole moment of the Mn0 center. (Read more)
- 110. Semiconductors 37, 872 (2003) , “ESR of Interacting Manganese Centers in Gallium Arsenide”, K. F. Shtel'makh, M. P. Korobkov, I. G. OzerovESR of Mn-doped GaAs is studied. The results indicate the presence of an interstitial impurity state in GaAs:Mn which is involved in the Coulomb interaction with the substitutional Mn states. Analysis of the temperature variations of ESR spectra and the values of the g factor shows that the interstitial center has a d5 electron configuration. The substitutional Mn create a strong random crystal field at the interstitial Mn ion. The results can be explained by assuming the existence of a nonzero dipole moment in the neutral state of Mn. (Read more)
- 111. Appl. Phys. Lett. 81, 622 (2002) , “Role of copper in the green luminescence from ZnO crystals”, N. Y. Garces, L. Wang, L. Bai, N. C. Giles, L. E. Halliburton, G. CantwellElectron paramagnetic resonance (EPR), photoluminescence, and infrared optical absorption have been used to investigate a ZnO crystal before and after a thermal anneal for 1 h in air at 900 °C. The sample was an undoped high quality crystal grown by the chemical vapor transport method. In... (Read more)
- 112. Appl. Phys. Lett. 81, 3945 (2002) , “Photoexcitation-electron-paramagnetic-resonance studies of the carbon vacancy in 4H-SiC”, N. T. Son, B. Magnusson, and E. JanzénPhotoexcitation-electron-paramagnetic-resonance (photo-EPR) studies were performed on p-type 4H-SiC irradiated with 2.5 MeV electrons. At W-band frequencies (~95 GHz) different EPR spectra could be well separated, allowing a reliable determination of the ground state levels of the... (Read more)
- 113. Appl. Phys. Lett. 81, 1128-1130 (2002) , “Electron spin resonance study of interface defects in atomic layer deposited hafnium oxide on Si”, A. Y. Kang, P. M. Lenahan, J. F. Conley Jr., R. SolankiWe report electron spin resonance (ESR) observation of interface defects at the HfO2/(111)Si boundary for HfO2 films deposited via atomic layer chemical vapor deposition using Hf(NO3)4 as a precursor. We observe several signals, dominated by one due to a... (Read more)
- 114. Appl. Phys. Lett. 80, 4753-4755 (2002) , “Characterization of S centers generated by thermal degradation in SiO2 on (100)Si”, A. Stesmans, B. Nouwen, D. Pierreux, and V. V. Afanas'evThe structural degradation of thermal SiO2 on (100)Si under isochronal vacuum annealing in the range Tan = 950 °C1250 °C was monitored by electron spin resonance (ESR) in terms of point defect creation, including... (Read more)
- 115. Appl. Phys. Lett. 80, 410 (2002) , “The level position of a deep intrinsic defect in 4H-SiC studied by photoinduced electron paramagnetic resonance”, M. E. Zvanut and V. V. KonovalovPhotoinduced electron paramagnetic resonance studies performed on nominally semi-insulating, high purity 4H-SiC have revealed charge transfer from an intrinsic defect (ID) to both the shallow boron acceptor and nitrogen donor. At 4 K, incident photon energy between 1.0 and 1.7 eV produces an... (Read more)
- 116. Appl. Phys. Lett. 80, 1945-1947 (2002) , “Density of states of Pb1 Si/SiO2 interface trap centers”, J. P. Campbell and P. M. LenahanThe electronic properties of the (100) Si/SiO2 interfacial defect called Pb1 are quite controversial. We present electron spin resonance measurements that demonstrate: (1) that the Pb1 defects have levels in the silicon band gap, (2) that... (Read more)
- 117. Appl. Phys. Lett. 80, 1334 (2002) , “Production of nitrogen acceptors in ZnO by thermal annealing”, N. Y. Garces, N. C. Giles, L. E. Halliburton, G. Cantwell, D. B. Eason, D. C. Reynolds, D. C. LookNitrogen acceptors are formed when undoped single crystals of zinc oxide (ZnO) grown by the chemical-vapor transport method are annealed in air or nitrogen atmosphere at temperatures between 600 and 900 °C. After an anneal, an induced near-edge absorption band causes the crystals to appear... (Read more)
- 118. Appl. Phys. Lett. 80, 1261-1263 (2002) , “Hole trapping in ultrathin Al2O3 and ZrO2 insulators on silicon”, V. V. Afanas'ev and A. StesmansOptical injection of electron-hole pairs in 35 nm thick layers of SiO2, Al2O3, ZrO2 and their stacks on (100)Si is found to result in positive oxide charging, suggesting trapping of holes. In thin layers of the high-permittivity metal oxides... (Read more)
- 119. J. Phys. Chem. Solids 63, 555-559 (2002) , “OH− impurities in co-doped LiNbO3:Cr 3+:ZnO congruent crystals”, G. A. Torchia, J. O. Tocho , F. JaqueInfrared optical absorption has been used to study OH−impurities into congruent co-doped LiNbO3:Cr3+:ZnO crystals doped with different Zn2+ concentration. The OH− IR absorption spectra present three bands that can be associated with different OH− complex centres available in the... (Read more)
- 120. Mater. Sci. Eng. 93, 39-48 (2002) , “Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)”, E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas, Jr , W. J. Moore, B. V. Shanabrook, A. E. Wickenden, D. D. Koleske, R. L. Henry, M. W. Bayerl, M. S. Brandt, H. Obloh, P. Kozodoy, S. P. DenBaars, U. K. Mishra, S. Nakamura, E. Haus, J. S. Speck, J. E. Van Nostrand, M. A. Sanchez, E. Calleja, A. J. Ptak, T. H. Myers and R. J. MolnarWe will highlight our recent work on the properties of residual defects and dopants in GaN heteroepitaxial layers and on the nature of recombination from InGaN single quantum well (SQW) light emitting diodes (LEDs) through magnetic resonance techniques. Electron paramagnetic resonance (EPR) and... (Read more)
- 121. Mater. Sci. Eng. A 332, 356-361 (2002) , “The preparation and characterization of ZnO ultrafine particles”, Liqiang Jing, Zili Xu, Jing Shang, Xiaojun Sun, Weimin Cai and Haichen GuoIn this paper, ZnO ultrafine particles (UFPs) were prepared by the thermal decomposition method of the precursor, zinc carbonate hydroxide. The structure and properties of the as-prepared ZnO UFPs were studied using TEM, XRD, BET, SPS, ESR, Raman, XPS and UV–Vis absorption spectroscopy. It... (Read more)
- 122. Mater. Sci. Eng. B 94, 8-13 (2002) , “Annealing effects in ZnO and ZnO–SnO2 powders during grinding”, M. Kakazey, J. Sanchez-Mondragon, G. Gonzalez-Rodriguez, M. Vlasova, T. Sreckovic, N. Nikolic ,M. M. RisticWe report on the differences in the defect structure of ZnO particles that take place at the grinding of powders of pure ZnO and mixture ZnO–SnO2. The defect structure formed was studied by electron paramagnetic resonance (EPR). The results demonstrate that a sequential two-stage thermal... (Read more)
- 123. Phys. Rev. B 66, 45201 (2002) , “Single ion anisotropy of Mn-doped GaAs measured by electron paramagnetic resonance”, O. M. Fedorych, E. M. Hankiewicz, Z. Wilamowski, J. SadowskiAn electron-paramagnetic-resonance (EPR) study of molecular-beam-epitaxy-grown Mn-doped GaAs is presented. The resolved fine structure in insulating Ga1-xMnxAs allows us to evaluate the crystal-field parameters of the spin Hamiltonian. The exchange narrowing of the structure,... (Read more)
- 124. Phys. Rev. B 66, 235202 (2002) , “Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy with S=3/2 and C3v symmetry in n-type 4H-SiC”, N. Mizuochi, S. Yamasaki, H. Takizawa, N. Morishita, T. Ohshima, H. Itoh, J. IsoyaThe TV2a center, which was suggested to be the excited triplet state (S=1) of the neutral silicon vacancy related defect [Sörman et al., Phys. Rev. B 61, 2613 (2000)] in the electron-irradiated n-type 4H-SiC has been studied by continuous wave and pulsed electron paramagnetic resonance... (Read more)
- 125. Phys. Rev. B 65, 85312 (2002) , “Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition”, E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas Jr, W. J. Moore, B. V. Shanabrook, R.L. Henry, A. E. Wickenden, D. D. Koleske, H.Obloh, P. Kozodoy, S. P. DenBaars, U. K. MishraElectron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) experiments have been performed on a set of GaN epitaxial layers doped with Mg from 2.5×1018 to 5.0×1019 cm-3. The samples were also characterized by secondary-ion-mass... (Read more)
- 126. Phys. Rev. B 65, 205202 (2002) , “Defects observed by optical detection of electron paramagnetic resonance in electron-irradiated p-type GaN”, L. S. Vlasenko, C. Bozdog, G. D. Watkins, F. Shahedipour, B. W. WesselsIrradiation of p-type (Mg-doped) GaN in situ at 4.2 K by 2.5 MeV electrons reduces the visible luminescence and creates a broad luminescence band in the infrared at ?0.95?eV. Upon annealing at 180 K, partial recovery of the visible luminescence occurs and a well resolved S=1 center is observed by... (Read more)
- 127. Phys. Rev. Lett. 89, 135507 (2002) , “Diffusion and Reactions of Hydrogen in F2-Laser-Irradiated SiO2 Glass”, Koichi Kajihara, Linards Skuja, Masahiro Hirano, and Hideo HosonoThe diffusion and reactions of hydrogenous species generated by single-pulsed F2 laser photolysis of SiO-H bond in SiO2 glass were studied in situ between 10 and 330Â K. Experimental evidence indicates that atomic hydrogen (H0) becomes mobile even at temperatures as... (Read more)
- 128. Phys. Rev. Lett. 88, 45504 (2002) , “Hydrogen: A Relevant Shallow Donor in Zinc Oxide”, Detlev M. Hofmann, Albrecht Hofstaetter, Frank Leiter, Huijuan Zhou, Frank Henecker, Bruno K. Meyer, Sergei B. Orlinskii, Jan Schmidt, Pavel G. BaranovElectron paramagnetic resonance and Hall measurements show consistently the presence of two donors ( D1 and D2) in state-of-the-art, nominally undoped ZnO single crystals. Using electron nuclear double resonance it is found that D1 shows hyperfine interaction with more than 50 shells of surrounding... (Read more)
- 129. Appl. Catalysis A 213, 173-177 (2001) , “In situ electron paramagnetic resonance (EPR) study of surface oxygen species on Au/ZnO catalyst for low-temperature carbon monoxide oxidation”, Zhengping Hao, Liangbo Fen, G. Q. Lu, Jianjun Liu, Lidun An and Hongli WangSome paramagnetic superoxide ions detectable by electron paramagnetic resonance (EPR) can be generated on Au/ZnO catalyst by oxygen adsorption at room temperature as well as at 553 K. In both the cases, the O2− ions are present on the catalyst surface. The disappearance of the O2−... (Read more)
- 130. Appl. Surf. Sci. 180, 308-314 (2001) , “The surface properties and photocatalytic activities of ZnO ultrafine particles”, Liqiang Jing, Zili Xu, Xiaojun Sun, Jing Shang and Weimin CaiWe prepared ZnO ultrafine particles (UFPs) by thermal decomposition of the precursor zinc carbonate hydroxide. The surface properties of the as-prepared particles were studied using TEM, XRD, BET, SPS, EPR, IR, and XPS. The surface contains active species such as oxygen deficiencies and hydroxyl... (Read more)
- 131. Diamond Relat. Mater. 10, 580-584 (2001) , “Phosphorus site after CIRA implantation of type IIa diamond”, N. Casanova, E. Gheeraert, A. Deneuville, C. Uzan-Saguy and R. KalishA set of type IIa diamond crystals was processed by cold implantation and rapid annealing at 1050°C ex situ annealing at 1400°C and investigated by ESR measurement. The ESR spectra of CIRA and post-annealed samples show an isotropic line at g=2.003, a set of anisotropic hyperfine lines,... (Read more)
- 132. Diamond Relat. Mater. 10, 480-484 (2001) , “EPR study of preferential orientation of crystallites in N-doped high quality CVD diamond”, S. Nokhrin, J. Rosa, M. Vanecek, A. G. Badalyan and M. NesladekThe directions of preferential growth of free-standing optical-quality CVD diamond wafers have been investigated with the help of electron paramagnetic resonance (EPR). EPR signals of the well-known P1 centre (substitutional nitrogen) have been used as a probe. A computer simulation of EPR spectra... (Read more)
- 133. Diamond Relat. Mater. 10, 434-438 (2001) , “Interstitial aggregates in diamond”, J. P. Goss, B. J. Coomer, R. Jones, T. D. Shaw, P. R. Briddon and S. ÖbergTheoretical modelling of magnetic resonance signals lead to convincing models for the first three self-interstitial aggregates in diamond. These in turn suggest the manner in which larger more stable aggregates including the platelet, observed in annealed type I diamonds, are formed. (Read more)
- 134. Diamond Relat. Mater. 10, 1681-1683 (2001) , “EPR and optical imaging of the growth-sector dependence of radiation-damage defect production in synthetic diamond”, G. A. Watt, M. E. Newton and J. M. BakerEPR imaging data are presented for the distribution of single substitutional nitrogen (P1) in a synthetic diamond of mixed IIa/Ib character, and compared with the distribution of the di-001-split interstitial (R1) produced during an electron irradiation. Since the defects are localised in different... (Read more)
- 135. J. Phys.: Condens. Matter 13, 8957-8964 (2001) , “Determination of the W8 and AB5 defect levels in the diamond gap”, R. N. Pereira, W. Gehlhoff, N. A. Sobolev, A. J. Neves, D. BimbergElectron paramagnetic resonance (EPR) and photo-EPR investigations on synthetic diamond crystals have allowed an unambiguous determination of nickel-related defect levels in the diamond bandgap. Indirect photoinduced recharging of the nitrogen donor and detection of two... (Read more)
- 136. J. Phys.: Condens. Matter 13, 2053-2060 (2001) , “Possible evidence of a copper-related electron paramagnetic resonance centre in diamond”, J. M. BakerThe EPR centre W36, found in natural type IIb diamond, has been previously attributed to a boron-related point defect, largely on account of its four line hyperfine structure attributed to 11B. The attribution has been re-examined, and no simple boron-related site has been found... (Read more)
- 137. J. Phys.: Condens. Matter 13, 2045-2051 (2001) , “An annealing study of the R1 EPR centre (the neatest-neighbour di-<100>-split self-interstitial) in diamond”, D. J. Twitchen, M. E. Newton, J. M. Baker, T. R. Anthony, W. F. BanholzerResults are reported of both isochronal and isothermal annealing studies of the R1 EPR centre (known to be a pair of parallel nearest-neighbouring 100-split self-interstitials) produced by 2 MeV electron irradiation of synthetic type IIa diamonds of very low defect concentration before... (Read more)
- 138. Mater. Sci. Eng. R 33, 135-207 (2001) , “Comprehensive characterization of hydride VPE grown GaN layers and templates”, H. MorkoçGaN community has recently recognized that it is imperative that the extended, and point defects in GaN and related materials, and the mechanisms for their formation are understood. This is a first and an important step, which must be followed by defect reduction before full implementation of this... (Read more)
- 139. Phys. Rev. B 64, 41307 (2001) , “Gate-controlled electron spin resonance in GaAs/AlxGa1-xAs heterostructures”, H. W. Jiang, Eli YablonovitchThe electron spin resonance (ESR) of two-dimensional electrons is investigated in a gated GaAs/AlGaAs heterostructure. We found that the ESR resonance frequency can be tuned by means of a gate voltage. The front and back gates of the heterostructure produce opposite g-factor shift, suggesting that... (Read more)
- 140. Phys. Rev. B 64, 245212 (2001) , “Structure of the silicon vacancy in 6H-SiC after annealing identified as the carbon vacancy-carbon antisite pair”, Th. Lingner, S. Greulich-Weber, J.-M. Spaeth, U. Gerstmann, E. Rauls, Z. Hajnal, Th. Frauenheim, H. OverhofWe investigated radiation-induced defects in neutron-irradiated and subsequently annealed 6H-silicon carbide (SiC) with electron paramagnetic resonance (EPR), the magnetic circular dichroism of the absorption (MCDA), and MCDA-detected EPR (MCDA-EPR). In samples annealed beyond the annealing... (Read more)
- 141. Phys. Rev. B 64, 235202 (2001) , “Photosensitive electron paramagnetic resonance spectra in semi-insulating 4H SiC crystals”, E. N. Kalabukhova, S. N. Lukin, A. Saxler, W. C. Mitchel, S. R. Smith, J. S. Solomon, A. O. EvwarayePhotosensitive electron paramagnetic resonance (EPR) investigations of unintentionally doped, semi-insulating (s.i.) 4H–SiC have been made at 37 GHz and 77 K including photoexcitation and photoquenching experiments. In the dark the EPR spectrum consists of a low intensity line due to boron on the... (Read more)
- 142. Phys. Rev. B 64, 201308 (2001) , “Magnetic-field pinning of a dynamic electron-spin-resonance line in a GaAs/AlxGa1-xAs heterostructure”, Chris Hillman, H. W. JiangElectrically detected electron spin resonance (ESR) is used to study the hyperfine interaction of the two-dimensional electrons and the nuclei of the host lattice in a GaAs/AlGaAs heterostructure. Under microwave and radio-frequency double excitations, we have observed that the ESR line can be... (Read more)
- 143. Phys. Rev. B 64, 115308 (2001) , “Experimental Investigation of Band Structure Modification in Silicon Nanocrystals”, B. J. Pawlak, T. Gregorkiewicz, C. A. J. Ammerlaan, W. Takkenberg, F. D. Tichelaar, P. F. A. Alkemade.Experimental studies of size-related effects in silicon nanocrystals are reported. We present investigations carried out on nanocrystals prepared from single-crystal Si:P wafer by ball milling. The average final grain dimension varied depending on the way of preparation in the range between 70 and... (Read more)
- 144. Phys. Rev. B 64, 085206 (2001) , “Electronic structure of the N donor center in 4H-SiC and 6H-SiC”, A. v. Duijn-Arnold, R. Zondervan, J. Schmidt, P. G. Baranov, E. N. MokhovIn this paper, we present high-frequency (95 GHz) pulsed electron paramagnetic resonance (EPR) and electron nuclear double resonance (ENDOR) measurements on the nitrogen (N) donor in 4H-SiC (k site) and 6H-SiC (h, k1, and k2 sites according to the accepted classification). From... (Read more)
- 145. Phys. Rev. B 64, 041201 (2001) , “Combined optical and microwave approach for performing quantum spin operations on the nitrogen-vacancy center in diamond”, Forrest T. Charnock and T. A. KennedyElectron spin echoes were performed on nitrogen-vacancy (N-V) centers in diamond using optical polarization and detection and 35 GHz microwave control. The experiments demonstrate an approach to quantum information in the solid state. A phase memory time of 3.6??s was measured, and coupling of the... (Read more)
- 146. Phys. Rev. B 63, 233202 (2001) , “Tetrahedral Mni4 Cluster in Silicon”, J. Wedekind, H. Vollmer, R. Labusch.Mni40 clusters were investigated by electron paramagnetic resonance in silicon specimens with initial doping concentrations between 1.5×1015?P cm-3 and 5×1016?B cm-3. In n-type samples and in intrinsic samples, we obtained the EPR... (Read more)
- 147. Phys. Rev. B 63, 201201(R) (2001) , “Carbon vacancy-related defect in 4H and 6H SiC”, N. T. Son, P. N. Hai, E. JanzénAn electron paramagnetic resonance (EPR) spectrum was observed at temperatures above 25 K in p-type 4H and 6H SiC irradiated with electrons. The center has C3V symmetry with an electron spin S=1/2. Using high frequency (?95 GHz) EPR it was possible to obtain the detailed hyperfine... (Read more)
- 148. Phys. Rev. B 63, 195208 (2001) , “Self-interstitial aggregation in diamond”, J. P. Goss, B. J. Coomer, R. Jones, T. D. Shaw, P. R. Briddon, M. Rayson, S. ÖbergFirst-principles methods are used to investigate the self-interstitial and its aggregates in diamond. The experimental assignment of the spin-1 R2 EPR center to the single interstitial has been questioned because of the small fine-structure term observed. We calculate the spin-spin interaction... (Read more)
- 149. Phys. Rev. B 63, 165204 (2001) , “g values of effective mass donors in AlxGa1-xN alloys”, M. W. Bayerl, M. S. Brandt, T. Graf, O. Ambacher, J. A. Majewski, M. Stutzmann, D. J. As, K. LischkaElectron spin resonance experiments were performed on Si-doped wurtzite and zinc-blende GaN and Si-doped wurtzite AlxGa1-xN alloys with x=0.15, 0.32, 0.52, 0.75, and 1. For zinc-blende GaN, an isotropic g factor of 1.9475 is found. The g tensors of the silicon effective mass... (Read more)
- 150. Phys. Rev. Lett. 87, 45502 (2001) , “Silicon Antisite in 4H SiC”, N. T. Son, P. N. Hai, E. JanzénElectron paramagnetic resonance spectrum with C3V symmetry and a spin S = 1/2 has been observed in p-type, electron-irradiated 4H SiC. Based on the observed 29Si hyperfine structures it is suggested that the defect is the isolated silicon antisite (SiC). The spin... (Read more)
- 151. Phys. Rev. Lett. 86, 1054 (2001) , “Electron Spin Resonance Observation of the Si(111)- (7×7) Surface and Its Oxidation Process”, Takahide Umeda, Masayasu Nishizawa, Tetsuji Yasuda, Junichi Isoya, Satoshi Yamasaki, and Kazunobu TanakaElectron spin resonance (ESR) observation of dangling-bond states on the Si(111)- (7×7) surface is demonstrated for the first time. The ESR spectra clearly show that a reaction of molecular oxygen with the Si(111)- (7×7) surface is associated with the appearance of a new dangling-bond center at... (Read more)Si SiO2| EPR STM/AFM/SPM| Oxygen Pb Ps0 Ps1 Silicon dangling-bond interface surface .inp files: Si/surface(111) | last update: Masatoshi Sasaki
- 152. phys. stat. sol. (a) 186, 215-220 (2001) , “First Principles Study of the Self-Interstitial Defect in Diamond”, J. P. Goss, R. Jones, T. D. Shaw, M. J. Rayson, P. R. BriddonFirst principles techniques have been employed to examine the isolated self-interstitial in diamond. The assignment of the R2 EPR center to the self-interstitial has been questioned because of the small fine structure term. We have calculated the spin-spin interaction tensor, which resolves the... (Read more)
- 153. phys. stat. sol. (a) 186, 199-206 (2001) , “Characterization of Defects in as-Grown CVD Diamond Films and HPHT Diamond Powders by Electron Paramagnetic Resonance”, K. Iakoubovskii, A. StesmansSeveral defect centers, labeled as KUL1-7, have been detected by electron paramagnetic resonance in CVD diamond films and synthetic diamond powders. Their g values were determined relatively to the P1 (NS0) center, for which the value of g = 2.00216(1) with... (Read more)
- 154. phys. stat. sol. (a) 186, 167-176 (2001) , “What We Have Learned about Intrinsic Defects in Silicon: A Help in Understanding Diamond?”, G. D. WatkinsWhat we have established by electron paramagnetic resonance (EPR) studies in silicon concerning the properties of its intrinsic defects (vacancies and interstitials) and their interactions with other defects is reviewed. The lessons learned are compared to what is currently being observed in... (Read more)
- 155. Physica B 308-310, 976-979 (2001) , “Magnetic resonance studies of ZnO”, W. E. Carlos, E. R. Glaser and D. C. LookWe have used EPR and ODMR to study state-of-the-art bulk ZnO single crystals. Most of the samples are n-type; however, under certain conditions (e-irradiated or annealed), we observe a center due to residual nitrogen (g||=1.9953, g=1.9633 and Aiso=1.225 mT, Aaniso=0.864 mT). The N center is a... (Read more)
- 156. Physica B 308-310, 749-752 (2001) , “Magneto-optical and ODEPR investigations of native defects in substrate-free LT-MBE grown GaAs”, I. Tkach, K. Krambrock, C. Steen, P. Kiesel and J. -M. SpaethAs-grown substrate-free LT-GaAs (200°C) and annealed samples (up to 660°C) have been investigated with magnetic circular dichroism of absorption (MCDA) and optically detected electron paramagnetic resonance (MCDA-EPR) in K- and W-bands. MCDA-EPR spectra of all samples reveal several... (Read more)
- 157. Physica B 308-310, 730 (2001) , “Deep level defects in sublimation-grown 6H silicon carbide investigated by DLTS and EPR”, K. Irmscher, I. Pintilie, L. Pintilie and D. Schulz6H-SiC bulk single crystals grown by physical vapor transport (PVT) were investigated by deep-level transient spectroscopy (DLTS) and electron paramagnetic resonance (EPR). One of the observed deep level defects was identified as isolated tungsten on Si sites by EPR. The electron spin of could be... (Read more)
- 158. Physica B 308-310, 691 (2001) , “Contactless studies of semi-insulating 4H–SiC”, W. E. Carlos, W. J. Moore, G. C. B Braga, J. A. Freitas, Jr. , E. R. Glaser and B. V. ShanabrookSemi-insulating (SI) silicon carbide is important for applications in high-power, high-frequency electronics, such as SiC MESFETs and GaN FETs. In this work, we discuss the use of low-temperature electron paramagnetic resonance (EPR), room- and low-temperature FTIR and photoluminescence as potential... (Read more)
- 159. Physica B 308-310, 621 (2001) , “Positively charged carbon vacancy in 6H–SiC: EPR study”, V. Ya. Bratus, I. N. Makeeva, S. M. Okulov, T. L. Petrenko, T. T. Petrenko and H. J. von BardelebenThe low-temperature X-band EPR study of Ky1 and Ky2 centers assigned to positively charged carbon vacancy (VC+) in two quasicubic sites of 6H–SiC crystal is presented. The CS symmetry, spin S=1/2 and close coincidence of the g-tensor components have been revealed. The principal values of... (Read more)
- 160. Physica B 308-310, 51-57 (2001) , “Magnetic resonance studies of defects in GaN with reduced dislocation densities”, E. R. Glaser, J. A. Freitas, Jr. , G. C. Braga, W. E. Carlos, M. E. Twigg, A. E. Wickenden, D. D. Koleske, R. L. Henry, M. Leszczynski, I. Grzegory, T. Suski, S. Porowski, S. S. Park, K. Y. Lee and R. J. MolnarMagnetic resonance experiments, including optically detected magnetic resonance (ODMR) and electron paramagnetic resonance (EPR), have been performed on Si-doped homoepitaxial GaN layers grown by MOCVD and on high quality, free-standing (200 μm-thick) GaN grown by HVPE. This allowed us to... (Read more)
- 161. Physica B 304, 12 (2001) , “Origin of yellow luminescence in n-GaN induced by high-energy 7 MeV electron irradiation”, Yasuhiko Hayashi, Tetsuo Soga, Masayoshi Umeno, Takashi JimboThe yellow luminescence band in high-energy 7 MeV electron-irradiated n-GaN is investigated as a function of electron irradiation dose. Both the yellow-band intensity and the near-bandedge photoluminescence (PL) intensity decrease continually with increasing electron irradiation dose. The decrease... (Read more)
- 162. Physica B 302-303, 88-100 (2001) , “Magnetospectroscopy of acceptors in "blue" diamonds”, Hyunjung Kim, A. K. Ramdas, S. Rodriguez, Zdenka Barticevic, M. Grimsditch and T. R. AnthonyNaturally occurring, nitrogen-free, p-type diamond—now known to be boron-doped—as well as man-made diamonds deliberately doped with boron display an electronic Raman transition, Δ′, originating in the 1s(p3/2) : Γ8 ground state of the acceptor and terminating in its... (Read more)
- 163. Physica B 302-303, 249-256 (2001) , “Hydrogen-Enhanced Clusterization of Intrinsic Defects and Impurities in Silicon”, B. N. Mukashev, Kh. A. Abdullin, Yu. V. Gorelkinskii, M. F. Tamendarov and S. Zh. TokmoldinFormation of intrinsic and impurity defect complexes in hydrogenated monocrystalline silicon is studied. Hydrogen was incorporated into samples by different ways: either by proton implantation at 80 and 300 K, or by annealing at 1250°C for 30–60 min in a sealed quartz ampoule containing... (Read more)
- 164. Physica B 302-303, 233-238 (2001) , “Complexes of Gold and Platinum with Hydrogen in Silicon”, P. T. Huy and C. A. J. AmmerlaanThree centers that involve gold or platinum and hydrogen have been observed in n-type hydrogenated silicon by electron paramagnetic resonance. The first two centers, labeled Si-NL63 and Si-NL64, were detected in the gold-doped samples revealing hyperfine interaction with two gold atoms for the... (Read more)
- 165. Physica B 302-303, 212-219 (2001) , “Magnetic resonance studies of shallow donor centers in hydrogenated Cz–Si crystals”, B. Langhanki, S. Greulich-Weber, J. –M. Staeth, V. P. Markevich, L. I. Murin, T. Mchedlidze, M. Suezawa.A complex magnetic resonance study (EPR, electrically detected EPR, ENDOR) of hydrogen-related radiation-induced shallow donors in silicon has been performed. Three species of this donor family (D1–D3) were observed earlier by means of infrared absorption measurements in hydrogenated... (Read more)
- 166. Physica B 294-295, 298-301 (2001) , “High field magnetoresistance and ESR measurements on Ni stripes on GaAs substrate”, A. Matsuo, M. Taki, S. A. Haque, Y. Yamamoto, T. Kikutani, S. Yamada, H. Nojiri, M. Motokawa and H. HoriNi nanowires fabricated on a GaAs substrate, which have width narrower than 500 nm and thickness 50 nm, showed an antiferromagnetic-like domain structure. Many Ni nanowires fabricated on GaAs using the electron beam lithography technique have been studied by electron spin resonance (ESR). Splitting... (Read more)
- 167. Physica E 10, 57-61 (2001) , “Millimeter wave and DC investigations of spin effects in the 2DES of AlGaAs/GaAs”, R. Meisels, K. Dybko, F. Ziouzia, F. Kuchar, R. Deutschmann, G. Abstreiter, G. Hein and K. PierzThe spin properties of the 2DES in AlGaAs/GaAs heterostructures are studied via the electron spin resonance (ESR) of conduction electrons and via the temperature dependence of the DC-σxx(B) conductivity component. The ESR is investigated at integer (ν=1) and fractional filling factors... (Read more)
- 168. Physica E 10, 399-402 (2001) , “Codoping effect of O2 into Er-doped InP epitaxial layers grown by OMVPE”, H. Ohta, C. Urakawa, Y. Nakashima, J. Yoshikawa, T. Koide, T. Kawamoto, Y. Fujiwara , Y. TakedaThe temperature dependence of ESR in InP:Er and the O2 codoping effect in InP:Er have been studied by X-band ESR measurement at low temperature. The ESR at around g=6, which corresponds to Er3+ site with Td symmetry, lost it's intensity quickly as the temperature is increased and disappeared above... (Read more)
- 169. Physica E 10, 395-398 (2001) , “ESR study of GaAs:Er codoped with oxygen grown by organometallic vapor phase epitaxy”, J. Yoshikawa, C. Urakawa, H. Ohta, T. Koide, T. Kawamoto, Y. Fujiwara and Y. TakedaX-band ESR measurements of GaAs:Er grown at 543°C by organometallic vapor phase epitaxy (OMVPE) with and without an additional O2 flow (samples I and II, respectively) have been performed at 3.5 K. Sample I shows an isotropic ESR signal around g=6 together with several anisotropic ESR signals... (Read more)
- 170. Physica E 10, 175-180 (2001) , “Monitoring the sign reversal of the valence band exchange integral in (Ga,Mn)As”, W. Heimbrodt, Th. Hartmann, P. J. Klar, M. Lampalzer, W. Stolz, K. Volz, A. Schaper, W. Treutmann, H. -A. Krug von Nidda, A. Loidl, T. Ruf and V. F. SapegaWe report the successful growth of magnetic Ga1−xMnxAs layers on (1 0 0) GaAs substrates by metal-organic vapour-phase epitaxy. Depending on the growth parameters, two different magnetic phases of Ga1−xMnxAs can be grown. (i) At low Mn-concentrations, Ga1−xMnxAs alloys are... (Read more)
- 171. Proc. SPIE 4413, 50 (2001) , “Growth, structure, and spectroscopic characterization of the Mn-doped GaN thin films”, Vyacheslav D. Bondar, Igor Kukharsky, Bohdan V. Padlyak, Volodymyr Davydov, Bohdan O. Simkiv, Marek Grinberg, Benedykt KuklinskiThe technologies of fabrication of thin film phosphors based on gallium nitride using rf-magnetron sputtering are developed and properties of films are studied. The dependence of GaN-Mn thin films deposition rate on rf-discharge power, substrate temperature and working gas pressure was estimated.... (Read more)
- 172. Thin Solid Films 395, 266-269 (2001) , “Charge-trapping defects in Cat-CVD silicon nitride films”, T. Umeda, Y. Mochizuki, Y. Miyoshi and Y. NashimotoWe show that Cat-CVD silicon nitride films contain more than 1019 cm−3 nitrogen-bonded Si dangling bonds, similarly to the case for conventional CVD films. However, the charge-trapping behavior of the Cat-CVD films is found to be quite different, in spite of the same origin for the dominant... (Read more)
- 173. Chem. Phys. Lett. 322, 273-279 (2000) , “Room-temperature field dependence of the electron spin–lattice relaxation times of paramagnetic P1 and P2 centers in diamond”, Cornelis J. Terblanche and Eduard C. ReynhardtElectron spin–lattice relaxation (SLR) times of P1 and P2 centers have been measured at 300 K at X-band and W-band for one synthetic (type-Ib) and three natural (type-Ia) diamonds using electron paramagnetic resonance spectroscopy. Bi-exponential SLR, with a fast and a slow component, was... (Read more)
- 174. Diamond Relat. Mater. 9, 883-886 (2000) , “Mechanisms of nitrogen aggregation in nickel- and cobalt-containing synthetic diamonds”, V. A. Nadolinny, A. P. Yelisseyev, J. M. Baker, D. J. Twitchen, M. E. Newton, B. N. Feigelson and O. P. YuryevaWe present a study of the point defects observed in as-grown and annealed synthetic diamonds using electron paramagnetic resonance (EPR) and infrared spectroscopy. The diamonds were grown by the temperature gradient HPHT method in a split sphere apparatus using Fe–Ni–C or... (Read more)
- 175. Diamond Relat. Mater. 9, 424-427 (2000) , “Experimental and theoretical studies of cobalt defects in diamond”, Karl Johnston, Alison Mainwood, Alan T. Collins, Gordon Davies, Daniel Twitchen, Mark Newton and J. M. BakerDiamonds grown with a cobalt/iron solvent catalyst and annealed at 1800°C were cut and polished along the main symmetry directions. The photoluminescence spectrum showed at least four zero phonon lines. One line at 2.367 eV splits and shifts under uniaxial stress indicating that it originates... (Read more)
- 176. Diamond Relat. Mater. 9, 417-423 (2000) , “Spectroscopy of defects and transition metals in diamond”, A. T. CollinsThis article reviews the optical and electron paramagnetic resonance (EPR) studies that have been carried out on diamonds containing nickel-related or cobalt-related defect centres. It is shown that this work is now at a stage where a real understanding may be reached about the nature of the defects... (Read more)
- 177. Diamond Relat. Mater. 9, 337-340 (2000) , “Structural changes in CVD diamond film by boron and nitrogen doping”, Yoshiyuki Show, Toshikazu Matsukawa, Hirokazu Ito, Mitsuo Iwase and Tomio IzumiThe effect of impurity atoms in the defect structures of a diamond film has been studied by electron spin resonance (ESR). It has been observed that introducing boron atoms into the diamond film during chemical vapor deposition (CVD) reduces paramagnetic defects (Pdia and Pac centers) by decreasing... (Read more)
- 178. Diamond Relat. Mater. 9, 1057-1060 (2000) , “New paramagnetic centers in annealed high-pressure synthetic diamond”, A. J. Neves, R. Pereira, N. A. Sobolev, M. H. Nazaré, W. Gehlhoff, A. Näser and H. KandaWe report three new paramagnetic centers found in high-pressure synthetic diamond with high nitrogen and nickel content and annealed at 1600°C. Analysis of the spectra has shown that two of the centers, labeled AB1 and AB2, are related to systems with effective spin S=1/2 and the other is... (Read more)
- 179. J. Appl. Phys. 88, 6265 (2000) , “Doping of n-type 6H–SiC and 4H–SiC with defects created with a proton beam”, A. A. Lebedev, A. I. Veinger, D. V. Davydov, V. V. Kozlovski, N. S. Savkina, A. M. Strel’chukDeep centers in n-type 4HSiC and 6HSiC irradiated with 8 MeV protons have been investigated by capacitance spectroscopy and electron paramagnetic resonance (EPR). Samples were fabricated by sublimation epitaxy or commercially produced by CREE Inc. Research Triangle Park, NC. It is... (Read more)
- 180. J. Appl. Phys. 88, 1784-1787 (2000) , “Electron Spin Resonance Centers Associated with Oxygen Precipitates in Czochralski Silicon Crystals”, M. Koizuka, H. Yamada-Kaneta.We have previously concluded that the oxygen-precipitate-associated defects that we identified by the deep levels at Ev + 0.30 eV and Ec0.25 eV were the Pb centers generated in the interface between the oxygen... (Read more)
- 181. J. Chem. Phys. 113, 744-750 (2000) , “Dynamic nuclear polarization of diamond. III. Paramagnetic electron relaxation times from enhanced 13C nuclear magnetic resonance signals”, Eduard C. Reynhardt and Grant L. HighIt is shown that by varying pulse lengths and delay times in electron spin resonance microwave pulse sequences, designed to enhance 13C nuclear magnetic resonance signals in diamond, and measuring the resulting 13C nuclear magnetic resonance signal, the paramagnetic impurity... (Read more)
- 182. J. Phys.: Condens. Matter 12, 7807-7817 (2000) , “Electron spin resonance characterization of a divacancy-related centre in CVD diamond”, A. Stesmans, B. Nouwen, K. IakoubovskiiThe electron spin resonance characterization of an undocumented paramagnetic centre in chemical vapour deposited diamond is reported. Successful fitting of the powder pattern-like spectrum characterized the originating defect as an S = 1 centre of spectroscopic splitting factor g =... (Read more)
- 183. Mater. Sci. Eng. B 73, 60-63 (2000) , “EPR study of He-implanted Si”, B. Pivac, B. Rakvin, R. Tonini, F. Corni and G. OttavianiElectron paramagnetic resonance has been used to study the influence of thermal treatments on defect evolution in helium-implanted Czochralski single-crystal silicon. It is shown that the thermal treatment induces helium migration and capturing by vacancy clusters that transform into pressurized... (Read more)
- 184. Mater. Sci. Eng. B 71, 263 (2000) , “Comparison of Electronic Structure and Properties of Hydrogen-Associated and Thermal Double Donors in Silicon”, S. Zh. Tokmoldin, B. N. Mukashev, Kh. A. Abdullin, Yu. V. Gorelkinskii and B. PajotInfrared (IR) and electron paramagnetic resonance (EPR) studies of quenching-dependent hydrogen-related double donor (HDD) formed in proton-implanted n-Si and p-Si upon annealing above 300°C were carried out. IR data taken at liquid He and N2 reveal that quenching-dependent IR absorption lines... (Read more)
- 185. Mater. Sci. Eng. B 71, 249 (2000) , “New (S=1) EPR AA17 center in silicon — microplatelets or precursor of platelets?”, Yu. V. Gorelkinskii, Kh. A. Abdullin, B. N. Mukashev.New (S=1) EPR spectrum (labeled Si-AA17) is observed in irradiated high-purity hydrogen-contained silicon after annealing at ≥200°C. The AA17 defect has D3d symmetry with g=2.0028, g=2.0106; A(29Si)=175.0 MHz, A=89.0 MHz; and D=±33.6 MHz, D=±16.8 MHz. It is paramagnetic in a... (Read more)
- 186. Nucl. Instrum. Methods Phys. Res. B 170, 125-133 (2000) , “Electron Paramagnetic Resonance Study of S2 Defects in Hydrogen-Implanted Silicon”, B. Rakvin, B. Pivac, R. Tonini, F. Corni and G. OttavianiElectron paramagnetic resonance spectra of S2 paramagnetic center in Float zone silicon (FZ-Si) and Czochralski silicon (CZ-Si) produced by H+2 ion-implantation and by subsequent annealing have been studied. At room temperature the spectrum exhibits an isotropic line g=2.0066±0.0002, which,... (Read more)
- 187. Phys. Rev. B 62, 8038-8052 (2000) , “Zeeman effect of electronic Raman lines of acceptors in elemental semiconductors: Boron in blue diamond”, H. Kim, Z. Barticevic, A. K. Ramdas, S. Rodriguez, M. Grimsditch, T. R. AnthonyThe Zeeman effect of the electronic Raman transition from 1s(p3/2):?8 to the 1s(p1/2):?7 spin-orbit partner (??) of boron acceptors in diamond is studied with magnetic field B along [001], [111], or [110]. As many as eight Zeeman components of... (Read more)
- 188. Phys. Rev. B 62, 6587-6597 (2000) , “EPR data on the self-interstitial complex O3 in diamond”, D. C. Hunt, D. J. Twitchen, M. E. Newton, J. M. Baker, J. K. Kirui, J. A. van Wyk, T. R. Anthony, W. F. BanholzerA previously unreported defect, which is labeled O3, has been observed in the EPR spectrum of synthetic type-IIa diamonds irradiated at 100 K with 2 MeV electrons. This defect was not observed in identical diamonds whose temperature during electron irradiation was ?300 K. This center has also been... (Read more)
- 189. Phys. Rev. B 62, 16587-16594 (2000) , “ESR and optical evidence for a Ni vacancy center in CVD diamond”, K. Iakoubovskii, A. Stesmans, B. Nouwen, and G. J. AdriaenssensCharacterization of a series of correlated electron-spin resonance (ESR) and photoluminescence (PL) lines in diamond grown by chemical vapor deposition is reported. The series consists of a set of structured PL bands in the range 1.8–2.3 eV, and ESR lines due to an S=1 center with g=2.0039(1) and... (Read more)
- 190. Phys. Rev. B 62, 15702 (2000) , “Microscopic origin of light-induced ESR centers in undoped hydrogenated amorphous silicon”, Takahide Umeda, Satoshi Yamasaki, Junichi Isoya, and Kazunobu Tanaka29Si hyperfine (hf) structures of light-induced electron-spin-resonance (LESR) centers of g=2.004 and 2.01 have been investigated in undoped hydrogenated amorphous silicon (a-Si:H) with different 29Si content (1.6, 4.7,9.1 at. %) by means of pulsed and multifrequency (3,11,34... (Read more)Si| EPR| Boron Silicon amorphous band-tail n-type p-type .inp files: Si/band-tail | last update: Takahide Umeda
- 191. Phys. Rev. B 62, 10841 (2000) , “Vacancy defects in p-type 6H-SiC created by low-energy electron irradiation”, H. J. von Bardeleben, J. L. Cantin, L. Henry, M. F. BartheThe intrinsic defects in p-type 6H-SiC:Al generated by electron irradiation at 300 keV, which is close to the threshold of the silicon atom displacement, have been studied by electron paramagnetic resonance spectroscopy. We observed two dominant irradiation-induced paramagnetic defects:?(i) a... (Read more)
- 192. Phys. Rev. B 62, 10126 (2000) , “Proton-implantation-induced defects in n-type 6H- and 4H-SiC: An electron paramagnetic resonance study”, H. J. von Bardeleben, J. L. Cantin, I. Vickridge, G. BattistigThe microscopic structure and introduction rate of point defects in n-type 6H- and 4H-SiC generated by room-temperature proton implantation have been studied by the electron paramagnetic resonance technique. In order to selectively study the effects of defect introduction in the trace region, 12-MeV... (Read more)
- 193. Phys. Rev. B 61, 9-11 (2000) , “Identification of cobalt on a lattice site in diamond”, D. J. Twitchen, J. M. Baker, and M. E. NewtonWe report the finding of an electron-paramagnetic-resonance (EPR) center, labeled O4, which contains cobalt on a site in the diamond lattice. O4 is observed at low temperatures (<30?K) in high temperature and pressure synthetic diamonds grown with a cobalt containing metal-solvent catalyst after... (Read more)
- 194. Phys. Rev. B 61, 8393-8403 (2000) , “Dissociation Kinetics of Hydrogen-Passivated Pb Defects at the (111)Si/SiO2 Interface”, A. Stesmans.An electron-spin-resonance study has been carried out, both isothermally and isochronically, of the recovery under vacuum annealing from the hydrogen passivated state (symbolized as HPb) of paramagnetic Pb centers (Si3?Si•) at the (111)Si/SiO2... (Read more)
- 195. Phys. Rev. B 61, 7448-7458 (2000) , “Hydrogen passivation of the selenium double donor in silicon:?A study by magnetic resonance”, P. T. Huy, C. A. J. Ammerlaan, T. Gregorkiewicz, D. T. Don.The passivation by hydrogen of selenium double donors in silicon has been investigated by magnetic resonance. Hydrogen was introduced by heat treatment at high temperatures in an atmosphere of water vapor. Two spectra were observed, labeled Si-NL60 and Si-NL61 for further reference, both showing... (Read more)
- 196. Phys. Rev. B 61, 5637 (2000) , “Electron spin resonance of the two-dimensional electron system in AlxGa1-xAs/GaAs at subunity filling factors”, R. Meisels, I. Kulac, F. Kuchar, M. KriechbaumThe electron spin resonance (ESR) of a two-dimensional electron system (2DES) in AlxGa1-xAs/GaAs in the regime of fractional filling (ν<1) of the lowest Landau level is investigated by a photoconductivity technique at millimeter wave frequencies. By performing the experiments... (Read more)
- 197. Phys. Rev. B 61, 4659-4666 (2000) , “Identification of the Oxygen-Vacancy Defect Containing a Single Hydrogen Atom in Crystalline Silicon”, P. Johannesen, B. Bech Nielsen, J. R. Byberg.Float-zone and Czochralski-grown silicon crystals have been implanted with protons or deuterons at ?50 K. Electron paramagnetic resonance measurements reveal a new signal in the spectrum of the Czochralski-grown (oxygen-rich) material. This signal is strongly temperature dependent, displaying a... (Read more)
- 198. Phys. Rev. B 61, 3863-3876 (2000) , “Identification of the neutral carbon ?100?-split interstitial in diamond”, D. C. Hunt, D. J. Twitchen, M. E. Newton, J. M. Baker, T. R. Anthony, W. F. Banholzer, S. S. VagaraliA systematic study has been made of some of the properties of R2, the most dominant paramagnetic defect produced in type-IIa diamond by electron irradiation. R2 has been produced in high-purity synthetic diamonds, which have been irradiated with 2 MeV electrons in a specially developed dewar,... (Read more)
- 199. Phys. Rev. B 61, 2657 (2000) , “Divacancy-Tin Complexes in Electron-Irradiated Silicon Studied by EPR”, M. Fanciulli, J. R. Byberg.n- and p-type float-zone silicon containing 1018-cm-3 tin were irradiated with 2 MeV electrons to a dose of 1018 cm-2 and subsequently examined by electron paramagnetic resonance (EPR). The p-type material yields only the well-known Si-G29 signal due to... (Read more)
- 200. Phys. Rev. B 61, 1918 (2000) , “EPR investigation of manganese clusters in silicon”, J. Martin, J. Wedekind, H. Vollmer, and R. LabuschManganese centers were investigated in silicon specimens with initial doping concentrations between 1.5×1015 P cm-3 and 6×1015 B cm-3. All known Mn centers could be observed but the cluster Mni3Mni was missing in highly-boron-doped... (Read more)
- 201. Phys. Rev. B 61, 16068-16076 (2000) , “Dipolar interactions between unpaired Si bonds at the (111)Si/SiO2 interface”, A. Stesmans, B. NouwenAn electron spin resonance (ESR) study has been carried out on the Pb centers (interfacial ?Si?Si3) in standard thermal (111)Si/SiO2, of which, in the as-grown state, a density 4.9×1012 cm-2 is inherently incorporated. The Pb density... (Read more)
- 202. Phys. Rev. B 61, 12939 (2000) , “Dimer of Substitutional Carbon in Silicon Studied by EPR and ab initio Methods”, J. R. Byberg, B. Bech Nielsen, M. Fanciulli, S. K. Estreicher, P. A. Fedders.An EPR signal observed in carbon-doped float-zone silicon after irradiation with 2-MeV electrons at room temperature has been investigated. It represents a defect with S=1/2, an apparently isotropic g factor (=2.0030), and a complicated hyperfine structure from 29Si nuclei in five shells... (Read more)
- 203. Phys. Rev. Lett. 85, 417 (2000) , “Extreme Reduction of the Spin-Orbit Splitting of the Deep Acceptor Ground State of ZnS- in Si”, H. Schroth, K. L. La?mann, S. Vo?, H. Bracht.Electric-dipole spin resonance of the deep acceptor ZnS- in Si reveals close Γ8 and Γ7 ground states with zero-field separation of only 0.31 meV as compared to the 43 meV of the two valence bands. With Landé's formula for the g factors of a 2T2 state split by spin-orbit interaction into Γ8 and Γ7 this nearness can be interpreted as strong quenching of the orbital moment. The observed dependence on the Zn isotopic mass indicates a dynamic contribution of the acceptor atom to the electronic state as is expected for a Jahn-Teller effect. (Read more)
- 204. Phys. Rev. Lett. 85, 2324-2327 (2000) , “Fast Diffusion of H and Creation of Dangling Bonds in Hydrogenated Amorphous Silicon Studied by in situ ESR”, U. K. Das, T. Yasuda, and S. YamasakiThe interaction of atomic hydrogen with a-Si:H films was studied by means of in situ ESR during H plasma treatment. H diffuses into the a-Si:H film and creates additional Si dangling bonds (∼1013 cm -2). We observed a high diffusion coefficient (>10-10  cm... (Read more)
- 205. phys. stat. sol. (a) 181, 83-90 (2000) , “Relative Abundance of Single and Vacancy-Bonded Substitutional Nitrogen in CVD Diamond”, I. I. Vlasov, V. G. Ralchenko, A. V. Khomich, S. V. Nistor, D. Shoemaker, R. A. KhmelnitskiiRelations between the concentrations of neutral (N0) and charged (N+) single-substitutional nitrogen and of nitrogen-vacancy (N-V) complexes in chemical vapour deposited diamond films of 0.2 mm thickness with nitrogen impurity concentration levels of 10 ppm are studied. For... (Read more)
- 206. phys. stat. sol. (a) 181, 5-10 (2000) , “ESR Study of Phosphorus Implanted Type IIa Diamond”, N. Casanova, E. Gheeraert, A. Deneuville, C. Uzan-Saguy, R. KalishCold Implantation and Rapid Annealing (CIRA) at 1050 °C of P in IIa diamond crystal, then further annealing at 1400 °C were performed. EPR signals were obtained in particular (i) around g = 2.003, from “dangling bond†defects whose total concentration increases with the dose and decreases... (Read more)
- 207. phys. stat. sol. (b) 221, 625-631 (2000) , “Identification of the Gold-Lithium Defect L1 in Silicon with the Trigonal Centre Au2--(Li+)3 by Electrical, Optical and Magnetic Resonance Spectroscopy”, B. Langhanki, J. –M. SpaethN-type silicon doped with gold and lithium was investigated by Electron Paramagnetic Resonance (EPR) and Deep Level Transient Spectroscopy (DLTS), using two sets of samples with different defect concentrations of both gold and lithium. Photoluminescence (PL) on both sets of samples allowed to... (Read more)
- 208. phys. stat. sol. (b) 217, 665-684 (2000) , “Paramagnetic Defects”, U. Gerstmann, M. Amkreutz, H. OverhofAb-initio calculations of paramagnetic hyperfine interactions for deep defects in semiconductors provide information about the magnetization density distribution in space. A comparison of theoretical results with corresponding data from magnetic resonance experiments allows to estimate the accuracy... (Read more)
- 209. Physica B 291, 270-274 (2000) , “An investigation of the optical spectra and EPR parameters of vanadium in III–V semiconductors (GaAs, GaP, InP)”, Jia-Jun Chen and Mao-Lu DuAs there is strong covalence in III–V semiconductors, the effect of the difference between the t2g orbit and eg orbit must be considered in their electric structure. In this paper we present a modified Sugano–Tanabe scheme and give the energy matrix of the d2 system and the g-factor... (Read more)
- 210. Physica E 6, 798-801 (2000) , “An experimental and theoretical study of the electron spin resonance mechanism in AlGaAs/GaAs”, R. Meisels, F. Kuchar and M. KriechbaumThe electron spin resonance (ESR) of the 2DES in AlGaAs/GaAs is investigated at millimeterwave frequencies and is shown to be dominantly a magnetic dipole transition. Strain-induced contributions to the electric dipole transition rate can be neglected. The origin of the change of the resistance due... (Read more)
- 211. Solid State Commun. 114, 39-42 (2000) , “Electron spin resonance of erbium in gallium nitride”, M. Palczewska, A. Wolos, M. Kaminska, I. Grzegory, M. Bockowski, S. Krukowski, T. Suski and S. PorowskiWe performed electron spin resonance (ESR) measurements on Er-doped single GaN crystals synthesized from the solution of nitrogen in liquid gallium under high pressure of N2. The axial Er3+ spectrum was observed with g||=2.861±0.003, g=7.645±0.003,... (Read more)
- 212. Appl. Catalysis A 178, 167-176 (1999) , “Reactivity for isomerization of 1-butene on the mixed MoO3–ZnO oxide catalyst”, Kentaro Nakamura, Kazuo Eda, Sadao Hasegawa , Noriyuki SotaniThe mixed MoO3–ZnO catalyst was expected to reveal the new function as a catalyst. The catalyst was characterized by XRD, ESR, XANES and so on. We found that the MoO3–ZnO catalyst was effective for isomerization and metathesis of 1-butene. The defects with the anion vacancy were formed... (Read more)
- 213. Appl. Phys. Lett. 74, 3948 (1999) , “Electron Paramagnetic Resonance of Radiation Defects in Hydrogen-Implanted Silicon Detected by Spin-Dependent Microwave Photoconductivity”, R. Laiho, L. S. Vlasenko, M. P. Vlasenko, V. A. Kozlov, V. V. Kozlovski.Electron paramagnetic resonance (EPR) spectra of radiation defects induced by low-energy protons (100 keV) in a thin near-surface layer (L < 1 µm) of silicon crystals are detected with spin-dependent microwave photoconductivity. It is found that EPR spectra of the excited... (Read more)
- 214. Appl. Surf. Sci. 147, 85-93 (1999) , “Influence of trivalent metal ions on the surface structure of a copper-based catalyst for methanol synthesis”, Hong-Bo Chen, Dai-Wei Liao, La-Jia Yu, Yi-Ji Lin, Jun Yi, Hong-Bin Zhang and Khi-Rui TsaiThe method of doping trivalent metal ions into a copper-based catalyst for methanol synthesis is effective in modifying the surface structure of the catalyst. The promotion effect and its relation to catalytic activity for hydrogenation of CO to methanol after doping with trivalent metal ions such... (Read more)
- 215. Diamond Relat. Mater. 8, 2022 (1999) , “Multiple twinning and nitrogen defect center in chemical vapor deposited homoepitaxial diamond”, Chih-Shiue Yan and Yogesh K. VohraHomoepitaxial diamond films were grown on polished {100} faces of single crystal type IIa diamond substrates using microwave plasma assisted chemical vapor deposition system. 14 homoepitaxial diamond films were grown under a variety of substrate temperatures (1000–2000°C), methane... (Read more)
- 216. Diamond Relat. Mater. 8, 1572 (1999) , “Correlation between ND1 optical absorption and the concentration of negative vacancies determined by electron paramagnetic resonance (EPR)”, D. J. Twitchen, D. C. Hunt, V. Smart, M. E. Newton and J. M. BakerElectron paramagnetic resonance (EPR) and optical absorption data on the negative and neutral vacancy in diamond are presented. We determine directly the constant of proportionality between the concentration of V− and the integrated intensity of its zero-phonon line (ND1). Using the standard... (Read more)
- 217. Diamond Relat. Mater. 8, 1569 (1999) , “ESR studies of the negative divacancy in irradiated type-I diamonds”, J. K. Kirui, J. A. van Wyk and M. J. R. HochThe W29 is a defect that forms in all irradiated type-Ib diamonds, and some type-Ia diamonds, in the temperature range in which isolated vacancies are mobile. It anneals out at roughly the same temperatures at which other defects, such as the negative vacancy and the R4 centre, which involve... (Read more)
- 218. Diamond Relat. Mater. 8, 1565 (1999) , “New EPR spectra in diamonds with a high concentration of nitrogen atoms”, V. A. Nadolinny, A. P. Yelisseyev, A. G. Badalyan, J. M. Baker, D. J. Twitchen, M. E. Newton, A. Hofstaetter and B. FeigelsonThe EPR spectrum of a synthetic diamond, containing a high concentration of isolated substitutional nitrogen, NS (the P1 EPR centre), shows in addition to the spectrum of P1 three other features not previously observed in nitrogen containing diamond:1. an ‘allowed’ pair spectrum close... (Read more)
- 219. Diamond Relat. Mater. 8, 1560 (1999) , “Modelling of interstitial-related defects in diamond”, A. MainwoodRadiation damage in diamond is a major experimental research tool and is becoming a technologically important topic. Although the vacancy and its complexes are well understood, the other products, the interstitials, are much less studied. Recent theoretical modelling of defects in diamond has... (Read more)
- 220. Diamond Relat. Mater. 8, 1480 (1999) , “Characteristic defects in CVD diamond: optical and electron paramagnetic resonance study”, M. Nesládek, K. Meykens, K. Haenen, J. Navrátil, C. Quaeyhaegens, L. M. Stals, A. Stesmans, K. Iakoubovskij, G. J Adriaenssens, J. Rosa and M. VanekConstant photocurrent method (CPM), electron paramagnetic resonance (EPR), and infra-red optical absorption (FTIR) techniques are used to study characteristic defects in the gap of free-standing optical-quality CVD diamond. It is shown that the gap density of states (DOS) is very sensitive to... (Read more)
- 221. Diamond Relat. Mater. 8, 1101 (1999) , “Optical spin polarization in the di-<001>-split interstitial (R1) centre in diamond”, D. J. Twitchen, M. E. Newton, J. M. Baker, W. F. Banholzer, T. R. AnthonyIrradiating diamond with electrons or neutrons produces the electron paramagnetic resonance (EPR) R1 centre which has been shown to be a di-001-split interstitial. We report that on cooling below a certain threshold temperature and illuminating with unpolarized light of energy greater than 1.7(1)... (Read more)
- 222. J. Magn. Reson. 136, 207-210 (1999) , “A Cryogenically Coolable Microwave Limiter”, George A. Rinard, Richard W. Quine , Gareth R. EatonA microwave (ca. 3 GHz) limiter, constructed using a GaAs PIN diode and microstrip impedance transformation circuit, limited 300-ns long 11-W microwave pulses to 70 mW at ca. 4.2 K. This limiter was implemented in a pulsed electron paramagnetic resonance (EPR) spectrometer to protect a low-noise microwave preamplifier from the high-power pulses. (Read more)
- 223. J. Phys.: Condens. Matter 11, 7357 (1999) , “A study of 13C hyperfine structure in the EPR of nickel-nitrogen-containing centres in diamond and correlation with their optical properties”, V. A. Nadolinny, A. P. Yelisseyev, J. M. Baker, M. E. Newton, D. J. Twitchen, S. C. Lawson, O. P. Yuryeva, B. N. FeigelsonElectron paramagnetic resonance (EPR) and optical spectroscopy have been used to determine the structure and electronic state of nickel-nitrogen centres in natural diamonds and in synthetic diamonds enriched in 13C. The latter were grown in an Fe-Ni-C solvent/catalyst system at 1750 K,... (Read more)
- 224. Jpn. J. Appl. Phys. 38, L113 (1999) , “Yellow Emission from Zinc Oxide giving an Electron Spin Resonance Signal at g=1.96”, Naoki Ohashi, Tomokazu Nakata, Takashi Sekiguchi, Hideo Hosono, Masafumi Mizuguchi, Takaaki Tsurumi, Junzo Tanaka, Hajime HanedaZnO polycrystals doped with Li, Cu or Al were prepared by solid-state reactions and their cathodoluminescence (CL) and electron spin resonance (ESR) spectra were measured. A strong yellow emission centered at 2.0 eV was observed for the Al-doped specimen and its intensity was higher than that of... (Read more)
- 225. Mater. Sci. Eng. B 61-62, 202 (1999) , “Carbon-vacancy related defects in 4H- and 6H-SiC”, N. T. Son, W. M. Chen, J. L. Lindström, B. Monemar, E. JanzénElectron paramagnetic resonance (EPR) was used to study intrinsic defects in 4H- and 6H-SiC irradiated with 2.5 MeV electrons with doses ranging from 1×1017 to 2×1018 cm−2. In p-type 4H- and 6H-SiC, the dominant EPR signal, labeled EI1, associates with a defect centre having a low... (Read more)
- 226. Mater. Sci. Eng. B 58, 71 (1999) , “Hydrogen enhancement of thermally induced interface degradation in thermal (111) Si/SiO2 traced by electron spin resonance”, A. Stesmans, V. V. Afanas’ev.The process of interface degradation induced in (111)Si/SiO2 by postoxidation annealing (POA) in vacuum, previously identified by electron spin resonance (ESR) as creation of persistent Pb (Si/Si3) interface defects, is found to be strongly enhanced (≈6 times) when performed in H2 ambient,... (Read more)
- 227. Mater. Sci. Eng. B 58, 52 (1999) , “Dipolar Interactions between Unpaired Si Bonds at the (111)Si/SiO2 Interface”, A. Stesmans, B. Nouwen.Direct experimental evidence for the dipolar interactions within the two-dimensional Pb defect system at the Si/SiO2 interface is provided by the observation of anisotropy in the electron spin resonance spectra. This observation was enabled through distinct interface degradation by post-oxidation... (Read more)
- 228. Mater. Sci. Eng. B 58, 171-178 (1999) , “Self-Interstitial Related Reactions in Silicon Irradiated by Light Ions”, B. N. Mukashev, Kh. A. Abdullin, Yu. V. Gorelkinskii and S. Zh. TokmoldinRecent deep level transient spectroscopy (DLTS), electron paramagnetic resonance (EPR) and infrared (IR) spectroscopy data on interactions of self-interstitial with carbon, aluminium, oxygen and hydrogen in silicon irradiated by light ions are reviewed. Self-interstitial behaviour in silicon was... (Read more)
- 229. Microelectron. Eng. 48, 113 (1999) , “Nature of the Pb1 Interface Defect in (100)Si/SiO2 as Revealed by Electron Spin Resonance 29Si Hyperfine Structure”, A. Stesmans, V. V. Afanas’ev.Observation by electron spin resonance of the full angular dependence of the hyperfine (hf) interaction spectrum associated with the interfacial Pb1 defect in thermal (100)Si/SiO2 shows that the dominant interaction arises from a single 29Si atom. The hf tensor displays weakly monoclinic I (nearly... (Read more)
- 230. Phys. Rev. B 60, 8304 (1999) , “Mn impurity in Ga1-xMnxAs epilayers”, J. Szczytko, A. Twardowski, K. ?wi?tek, M. Palczewska, M. Tanaka, T. Hayashi, K. AndoElectron paramagnetic resonance was measured in Ga1-xMnxAs/GaAs epilayers with 0.002<~x<~0.01. Data were taken as a function of magnetic field orientation at low temperatures. The observed spectra were attributed to ionized Mn acceptor A-. No neutral Mn... (Read more)
- 231. Phys. Rev. B 60, 5417 (1999) , “Magnetic circular dichroism of the 1.404-eV interstitial nickel absorption transition in high-pressure synthetic diamond”, P. W. Mason, F. S. Ham, and G. D. WatkinsA high-resolution magnetic circular dichroism (MCDA) study of the sharp 1.404-eV zero-phonon absorption line associated with interstitial nickel in high-pressure synthetic diamond is reported. A model is presented attributing the absorption to internal transitions within the 3d9... (Read more)
- 232. Phys. Rev. B 60, 5392 (1999) , “EPR spectra of separated pairs of substitutional nitrogen atoms in diamond with a high concentration of nitrogen”, V. A. Nadolinny, A. P. Yelisseyev, J. M. Baker, D. J. Twitchen, M. E. Newton, A. Hofstaetter, B. FeigelsonElectron paramagnetic resonance (EPR) measurements are reported in synthetic diamonds grown in an Fe-Ni-C solvent/catalyst system at 1750 K, under stabilizing pressure, by the temperature gradient method. Such diamonds are known to have high concentrations of nitrogen. EPR spectra have been found in... (Read more)
- 233. Phys. Rev. B 59, 4849 (1999) , “Electron-spin-resonance center of dangling bonds in undoped a-Si:H”, T. Umeda, S. Yamasaki, J. Isoya, K. Tanaka.A variety of electron-spin-resonance (ESR) spectra of dangling bond (g=2.0055) in undoped hydrogenated amorphous silicon (a-Si:H) have been measured by the echo-detected ESR of pulsed ESR as well as the usual continuous-wave (cw) ESR for a wide range of two experimental parameters of microwave... (Read more)
- 234. Phys. Rev. B 59, 2773 (1999) , “Electron Paramagnetic Resonance and Photoluminescence Study of Er-Impurity Complexes in Si”, J. D. Carey, R. C. Barklie, J. F. Donegan, F. Priolo, G. Franzò, S. Coffa.Electron paramagnetic resonance (EPR) and photoluminescence (PL) spectroscopy have been used to examine the structure and optical properties of erbium-impurity complexes formed in float-zone Si by multiple-energy implants at 77 K of Er together with either O or F. After implantation a 2-?m-thick... (Read more)
- 235. Phys. Rev. B 59, 12900 (1999) , “Electron-paramagnetic-resonance measurements on the divacancy defect center R4/W6 in diamond”, D. J. Twitchen, M. E. Newton, J. M. Baker, T. R. Anthony, W. F. BanholzerElectron-paramagnetic-resonance (EPR) studies in radiation damaged diamond enriched to 5% 13C have resulted in the identification of the nearest-neighbor divacancy center. It is the isotopic enrichment, and consequent observation of 13C hyperfine lines, that has permitted the... (Read more)
- 236. Phys. Rev. Lett. 83, 3254 (1999) , “Magnetospectroscopy of Acceptors in “Blue” Diamonds”, H. Kim, A. K. Ramdas, S. Rodriguez, M. Grimsditch, T. R. AnthonyThe Zeeman effect of the Δ′ [1s(p3/2):Γ8→1s(p1/2):Γ7] Raman line of boron acceptors in diamond exhibits the predicted eight components and four transitions within the Γ8 multiplet, discovered under diverse polarization... (Read more)
- 237. Phys. Solid State 41, 783 (1999) , “Transition and rare-earth elements in the SiC and GaN wide-gap semiconductors: recent EPR studies”, P. G. Baranov, I. V. Il'in, E. N. Mokhov, V. A. KhramtsovEPR studies of transition-element ions in SiC and GaN and of erbium in 6H-SiC are reported. Data are presented on Sc2+ ions and scandium acceptors, and chromium and molybdenum ions in various charge states in SiC. A study was made of nickel and manganese in nominally pure GaN grown by the sandwich sublimation method. The first EPR investigation of Er in 6H-SiC is reported. Erbium was identified from the hfs of the EPR spectra. Various possible models of erbium centers in silicon carbides are discussed. Strong room-temperature erbium-ion luminescence was observed. (Read more)
- 238. Phys. Solid State 41, 712 (1999) , “Radiospectroscopy of wide-gap semiconductors: SiC and GaN”, P. G. BaranovThe present report submitted to the Anniversary Conference of the A. F. Ioffe Physicotechnical Institute, “Physics at the Turn of the 21st Century,†deals with recent EPR studies of main impurities in the wide-gap semiconductors SiC and GaN, which appear to be the most promising materials for microelectronics and quantum semiconductor electronics at the start of the 21st century. (Read more)
- 239. phys. stat. sol. (a) 174, 137 (1999) , “Effect of Stress on Optical and ESR Lines in CVD Diamond”, K. Iakoubuvskii, A. Stesmans, G. J. Adriaenssens, R. Provoost, R. E. Silverans, V. RaikoCorrelation between the shape of Raman, photoluminescence (PL) and Electron Spin Resonance (ESR) signals in CVD diamond films was examined for both undoped and nitrogen-doped films. No correlation was observed between the shift of the diamond Raman line and its linewidth, even for the films produced... (Read more)
- 240. phys. stat. sol. (a) 172, 113 (1999) , “On Photocurrent (and EPR) Study of Defect Levels in CVD Diamond”, J. Rosa, M. Van??ek, M. Nesládek, L. M. StalsPhotocurrent spectroscopy is used for studying electronic defect states in the gap of optical-quality CVD diamond. The constant photocurrent method (CPM), allowing to measure the optical (photoionization) cross-section of defects, is applied on samples with a different surface treatment. The... (Read more)
- 241. phys. stat. sol. (b) 215, 109 (1999) , “Zeeman Effect of Lyman Transitions: Electronic Raman Spectrum of Boron Acceptors in Diamond”, H. Kim, R. Vogelgesang, A. K. Ramdas, S. Rodriguez, M. Grimsditch, T. R. AnthonySubstitutional boron impurities in diamond exhibit characteristic Lyman transitions, originating in the lower 1s(p3/2): 8 ground state and terminating in its spin-orbit split 1s(p1/2): 7 counterpart. In addition to the Lyman spectrum observed in the... (Read more)
- 242. Physica B 273-274, 938 (1999) , “Confinement Effects on Phosphorus Donors Embedded in Silicon Nanocrystals”, B. J. Pawlak, T. Gregorkiewicz and C. A. J. AmmerlaanMagnetic resonance of shallow donor center phosphorus is used to track size-related changes of energy band structure in silicon powders. Small conduction band upshifts of several meV are determined for nanocrystals of approximately d=100 nm diameter and smaller. These are interpreted as the onset of... (Read more)
- 243. Physica B 273-274, 7-14 (1999) , “Self-interstitials in semiconductors: what we are learning from interstitial Zn in ZnSe”, G. D. Watkins , K. H. ChowInterstitial Zn+i has been observed in ZnSe by optical detection of EPR to be on-center in either Td interstitial site – that surrounded by four Se atoms, (Zni)+Se, or by four Zn atoms, (Zni)+Zn. This can be understood by a simple universal model which predicts stability for an interstitial... (Read more)
- 244. Physica B 273-274, 651 (1999) , “New paramagnetic defects in synthetic diamonds grown using nickel catalyst”, A. J. Neves, R. Pereira, N. A. Sobolev, M. H. Nazaré, W. Gehlhoff, A. Näser and H. KandaWe report four new EPR spectra found in high-pressure synthetic diamonds with high nitrogen content, grown using nickel, and annealed at 1600°C. Analyzing the complex spectra around g≈2 two trigonal and two orthorhombic defects, all with , were identified from the angular dependence and... (Read more)diamond| EPR| AB1 AB2 AB3 AB4 .inp files: diamond/AB1 diamond/AB2 diamond/AB3 diamond/AB4 | last update: Masatoshi Sasaki
- 245. Physica B 273-274, 647 (1999) , “Transition metals in diamond: experimental and theoretical identification of Co–N complexes”, Karl Johnston, Alison Mainwood, Alan T. Collins, Gordon Davies, Daniel Twitchen, J. M. Baker and Mark NewtonDiamonds grown using a cobalt/iron catalyst and annealed at 1800°C were studied using two experimental techniques. A zero-phonon line, observed in photoluminescence at 2.367 eV, showed the splitting under uniaxial stress characteristic of an optical transition at a defect of trigonal symmetry.... (Read more)
- 246. Physica B 273-274, 644 (1999) , “The production and annealing stages of the self-interstitial (R2) defect in diamond”, D. J. Twitchen, D. C. Hunt, C. Wade, M. E. Newton, J. M. Baker, T. R. Anthony and W. F. BanholzerWe report on the production rate of the neutral 0 0 1-split self-interstitial (measured via the electron paramagnetic resonance (EPR) concentration of the R2 defect) in type IIa diamond irradiated at a controlled and measured sample temperature in the interval 110–350 K with 2 MeV electrons... (Read more)
- 247. Physica B 273-274, 632 (1999) , “Ab initio calculations of hyperfine interactions for vacancy and Ni point defects in diamond”, U. Gerstmann, M. Amkreutz and H. OverhofWe calculate total energies and hyperfine interactions for the VC− ground state and the VC*0 excited state of the vacancy in diamond. The comparison with experimental data shows that the local spin density approximation gives reliable spin densities not only for ground states, but also for... (Read more)
- 248. Physica B 273-274, 624 (1999) , “Jahn–Teller splitting and Zeeman effect of acceptors in diamond”, Hyunjung Kim, S. Rodriguez, M. Grimsditch, T. R. Anthony and A. K. RamdasEmploying the high resolution of a 5+4 tandem Fabry–Pérot interferometer, we discovered that Δ′, the Raman active electronic transition between the spin–orbit split 1s(p3/2) : Γ8 and 1s(p1/2) : Γ7 acceptor ground states, is a doublet for a boron impurity... (Read more)
- 249. Physica B 273-274, 524 (1999) , “Tin-Vacancy Complexes in e-Irradiated n-Type Silicon”, Marco Fanciulli and Jørgen R. BybergElectron irradiated n-type float-zone silicon containing tin has been investigated by EPR. In addition to the well known Si-G29 signal due to the SnV0 complex we have observed a group of similar EPR signals with strongly anisotropic, near-trigonal g tensors, which we label DK4. The corresponding... (Read more)
- 250. Physica B 273-274, 445 (1999) , “ESR study of Fe–H complexes in Si”, Toru Takahashi and Masashi SuezawaWe studied the influence of hydrogen (H) on the properties of Fe in Si crystals based on ESR measurement. Specimens were prepared from an n-type Si crystal (phosphorus concentration; 1.5×1016 cm−3). After chemical polishing, they were doped with 57Fe by a vapor method and with H by... (Read more)
- 251. Physica B 273-274, 404 (1999) , “Dependence of Electrically Detected Magnetic Resonance Signal Shape from Iron-Contaminated Silicon Wafers on the Thermal Treatment of the Samples”, T. Mchedlidze, K. Matsumoto, T. –C. Lin, M. Suezawa.The shape of the electrically detected magnetic resonance (EDMR) signal from iron–contaminated Czochralski-grown silicon (CZ–Si) samples strongly depends on the thermal treatments applied to the samples before and after the contamination procedure, although the average g-value of the... (Read more)
- 252. Physica B 273-274, 350 (1999) , “Structure of Er-Related Centers in Si”, J. D. Carey and F. PrioloElectron paramagnetic resonance (EPR) measurements have been performed on samples of Er implanted FZ Si which have been co-implanted with O ions. For an Er concentration of 1019/cm3 well-defined Er3+ centers with monoclinic and trigonal symmetry are observed in samples with 1020 O/cm3 but are... (Read more)
- 253. Physica B 273-274, 296 (1999) , “Assignment of EPR Spectrum for Bistable Thermal Donors in Silicon”, L. F. Makarenko, N. M. Lapchuk and Ya. I. LatushkoIt has been shown that bistability of thermal double donors (TDD) in silicon can be observed by EPR technique. The spectrum of a bistable TDD species (TDD2) has been isolated using heat-treatment of Czochralsky-grown n-type silicon crystals with initial resistivity 4.5 Ω cm, at temperature... (Read more)
- 254. Physica B 273-274, 279 (1999) , “Identification of Cadmium-Related Centers in Silicon”, A. Näser, W. Gehlhoff and H. OverhofThe electronic and geometric structures of a new Cd-related center with trigonal symmetry is investigated by electron paramagnetic resonance (EPR). Isotope doping with the isotopes 111Cd and 57Fe confirmed, that the defect consists of one single Cd atom and one isolated Fe atom with a center axis in... (Read more)
- 255. Physica B 273-274, 264 (1999) , “EPR proof of the negatively charged acceptor state Zn− in silicon”, W. Gehlhoff, A. Näser, H. Bracht.The electronic properties of Zn in monocrystalline silicon were studied by means of electron paramagnetic resonance (EPR). In high-ohmic p- and n-type Si doped with Zn two new line sets were observed. One of them show the characteristic behavior of the and transitions of a Γ8 state in... (Read more)
- 256. Physica B 273-274, 256 (1999) , “Infrared Absorption Study of a New Dicarbon Center in Silicon”, E. V. Lavrov, B. Bech Nielsen, J. Byberg and J. L. LindströmInfrared absorption measurements on n-type silicon doped with carbon and irradiated with electrons at room temperature have revealed new absorption lines at 527.4 and 748.7 cm−1. The 748.7 cm−1 line is observed only when the sample is cooled down in the dark and the spectra are... (Read more)
- 257. Physica B 273-274, 239 (1999) , “Atomic and Electronic Structure of Hydrogen-Passivated Double Selenium Donors in Silicon”, P. T. Huy, C. A. J. Ammerlaan and T. GregorkiewiczSelenium–hydrogen-related defects in silicon have been investigated by magnetic resonance. Two new electron paramagnetic resonance (EPR) spectra Si-NL60 and Si-NL61 of selenium–hydrogen complexes were observed. By application of the electron nuclear double resonance (ENDOR) and field... (Read more)
- 258. Physica B 273-274, 204 (1999) , “Hydrogen Interactions with Interstitial- and Vacancy-Type Defects in Silicon”, S. Zh. Tokmoldin, B. N. Mukashev, Kh. A. Abdullin and Yu. V. GorelkinskiiIR and EPR studies of hydrogen interactions with defects in silicon implanted with protons and deuterons were carried out. An analysis of temperature dependence of Si–H local mode anharmonicity, using isotope substitution of H by D, revealed that anharmonicity is sensitive to the environment... (Read more)
- 259. Physica B 273-274, 180 (1999) , “The A Center Binding a Single Hydrogen Atom in Crystalline Silicon Observed by EPR”, P. Johannesen, J. R. Byberg, B. Bech Nielsen.Electron paramagnetic resonance measurements on proton- and deuteron-implanted silicon crystals reveal a new signal from a vacancy-type defect with spin , which is observable only in oxygen-rich material. The signal is strongly temperature-dependent, displaying monoclinic-I symmetry below 180 K and... (Read more)
- 260. Physica B 273-274, 171 (1999) , “Hydrogen-Induced Extended Complexes in Silicon”, Yu. V. Gorelkinskii, Kh. A. Abdullin and B. N. MukashevNew EPR spectrum, labeled Si-AA17, forms upon annealing at 200°C in irradiated high-purity hydrogen-containing silicon and is stable up to 450°C. The AA17 defect has D3d symmetry, electronic spin S=1 and it is paramagnetic in a neutral charge state. An analysis of 29Si hf interaction has... (Read more)
- 261. Physica B 273-274, 15 (1999) , “Current problems in diamond: towards a quantitative understanding”, Gordon DaviesThis paper discusses three major areas of current work on the properties of point defects in diamond: attempting to introduce a shallow donor centre, studying the rôle of transition metals, and achieving a quantitative understanding of radiation effects. Recent work on the first two topics is... (Read more)
- 262. Physica B 273-274, 113 (1999) , “Electron paramagnetic resonance (EPR) and optical absorption studies of defects created in diamond by electron irradiation damage at 100 and 350 K”, D. J. Twitchen, D. C. Hunt, M. E. Newton, J. M. Baker, T. R. Anthony and W. F. BanholzerWe present a study, using electron paramagnetic resonance (EPR) and optical absorption spectroscopies, of high purity synthetic type IIa diamonds, which have been irradiated with 2 MeV electrons in a specially developed dewar; allowing irradiation at a measured sample temperature down to 100 K, at... (Read more)
- 263. Physica B 273-274, 1015 (1999) , “Electron spin resonance study of the interaction of hydrogen with the (1 1 1)Si/SiO2 interface: Pb-hydrogen interaction kinetics”, A. Stesmans.The thermal interaction kinetics of interfacial Si dangling bond Pb defects (Si3≡Si·) in (1 1 1)Si/SiO2, including passivation in molecular hydrogen (pictured as PbH formation) and dissociation in vacuum, is readdressed. An initial simple thermal model had concluded simple exponential... (Read more)
- 264. Solid State Commun. 112, 541-544 (1999) , “A new EPR centre of Er3+ in MgO or ZnO co-doped LiNbO3 single crystals”, D. Bravo, A. Martín , F. J. LópezElectron Paramagnetic Resonance (EPR) experiments have been carried out on congruent crystals of LiNbO3 heavily doped with Mg or Zn and co-doped with Er. In addition to the EPR spectrum previously observed in crystals of LiNbO3:Er3+ an erbium spectrum not reported before is detected in samples... (Read more)
- 265. Solid State Commun. 111, 397 (1999) , “EPR of new nickel–nitrogen center in annealed synthetic diamond”, R. I. Mashkovtsev and Yu. N. Pal'yanovIn addition to the NE1 and NE2 centers a new EPR center with S=1/2, which we have labeled the RM1 center, has been found in synthetic diamond grown from the Ni solvent and annealed at 2300 K. The RM1 spectrum appears as a pattern of nine lines with intensity distribution near 1:4:10:16:19:16:10:4:1... (Read more)
- 266. Solid State Commun. 110, 593-598 (1999) , “Generation of EL2 defects by a 6-MeV proton irradiation of semi-insulating GaAs”, S. A. Goodman, F. K. Koschnick, Ch. Weber, J. -M. Spaeth and F. D. AuretThe defects introduced in a bulk semi-insulating (SI) GaAs by a 6-MeV proton irradiation at 300 K were investigated with the electron paramagnetic resonance (EPR) detected via the magnetic circular dichroism of the optical absorption. EL2 defects (EL20 and EL2+) are introduced by proton irradiation... (Read more)
- 267. Thin Solid Films 353, 20 (1999) , “Silicon dots/clusters in silicon nitride: photoluminescence and electron spin resonance”, V. A. Gritsenko, K. S. Zhuravlev, A. D. Milov, Hei Wong, R. W. M. Kwok and J. B. XuPhotoluminescence (PL) properties of SiNx (0.51<x<1.3) films are studied. A visible luminescence near the UV region is observed and the PL intensity and peak positions are found to be governed by the excess silicon composition. A large scale potential fluctuation due to the spatial... (Read more)
- 268. Appl. Phys. A 67, 209 (1998) , “Silicon vacancies in 3C-SiC observed by positron lifetime and electron spin resonance”, A. Kawasuso, H. Itoh, N. Morishita, M. Yoshikawa, T. Ohshima, I. Nashiyama, S. Okada, H. Okumura, S. YoshidaPositron lifetime and electron spin resonance (ESR) measurements were performed for 1-MeV electronirradiated cubic silicon carbide (3C-SiC). From a comparison of the annealing behaviors of positron lifetime and ESR signal, we identified the annihilation of positrons localized at single-negative silicon vacancies. The positron lifetime at silicon vacancies was first determined experimentally to be 188|±|4 ps. This value agrees well with the theoretical positron lifetime for silicon vacancies [G. Brauer et al. Phys. Rev. B 54, 2512 (1996)]. The trapping coefficient of singlenegative silicon vacancies was also derived. (Read more)
- 269. Appl. Phys. Lett. 73, 3250 (1998) , “Electron Paramagnetic Resonance Evidence for Reversible Transformation of Thermal Donor into Shallow Donor-Type Center in Hydrogen-Implanted Silicon”, B. Rakvin, B. Pivac, R. Tonini, F. Corni, G. Ottaviani.Electron paramagnetic resonance spectrum of the proton-related thermal donor (TD) assigned as NL8 paramagnetic center has been detected at 110 K after heat treatment of the hydrogen-implanted Czochralski-Si at 773 K. The effect of temperature on reversible transformations of the anisotropic spectrum... (Read more)
- 270. Appl. Phys. Lett. 73, 1119 (1998) , “Silicon Di-Interstitial in Ion-Implanted Silicon”, Young Hoon LeeA new Si di-interstitial model is derived from the Si-P6 electron paramagnetic resonance spectrum observed in neutron-, proton-, or ion-implanted silicon. Two Si interstitials lie in the {100} plane at a position considerably off from two tetrahedral interstitial sites nearby, sharing one Si... (Read more)
- 271. Appl. Phys. Lett. 72, 2271 (1998) , “Hydrogen-Induced Thermal Interface Degradation in (111) Si/SiO2 Revealed by Electron-Spin Resonance”, A. Stesmans, V. V. Afanas’ev.Electron-spin resonance (ESR) experiments show that the interface degradation induced in thermal (111) Si/SiO2 by postoxidation annealing (POA) in vacuumpreviously isolated by ESR as a permanent creation of Pb (SiSi3) interface defectsis... (Read more)
- 272. Diamond Relat. Mater. 7, 333 (1998) , “Correlation between optical absorption and EPR in high-pressure diamond grown from a nickel solvent catalyst”, A. T. Collins, H. Kanda, J. Isoya, C. A. J. Ammerlaan, J. A. van WykThere is a general tendency for the magnitude of the W8 electron paramagnetic resonance, attributed to substitutional negatively charged nickel, Nis−, to increase in sympathy with the strengths of the 1.883 eV and 2.51 eV absorption bands in high-pressure synthetic diamond. The ratio of the... (Read more)
- 273. Diamond Relat. Mater. 7, 1558 (1998) , “Relationship between electronic states of nickel-containing centres and donor nitrogen in synthetic and natural diamonds”, V. Nadolinny, A. Yelisseyev, O. Yurjeva, A. Hofstaetter, B. Meyer and B. FeigelsonSome features of the charge transfer process in donor nitrogen and nickel centres on exposure to X-ray and light illumination, have been examined in natural and synthetic diamonds by EPR and optical absorption. Donor nitrogen has been shown to serve as a bulk charge compensator of the paramagnetic... (Read more)
- 274. Diamond Relat. Mater. 7, 1282 (1998) , “A new proposal for the structure of platelets in diamond”, J. M. BakerA new model is proposed for platelets in diamond that is based upon the unambiguously determined molecular structure of the EPR centre known as R1, which comprises two parallel [001] split interstitials at nearest neighbour positions in the plane. The new feature of the model is the structure of... (Read more)
- 275. J. Appl. Phys. 84, 6782 (1998) , “Electron spin resonance of Er–oxygen complexes in GaAs grown by metal organic chemical vapor deposition”, T. Ishiyama, E. Katayama, K. Murakami, K. Takahei, A. TaguchiWe have performed electron spin resonance (ESR) measurements on Er-doped GaAs grown with oxygen codoping by metal organic chemical vapor deposition. An isotropic line (an effective g value, g = 5.95) which had been already reported was observed in samples without oxygen codoping. On... (Read more)
- 276. J. Appl. Phys. 84, 4847 (1998) , “Stress-Induced Alignment and Reorientation of Hydrogen-Associated Donors in Silicon”, Yu. V. Gorelkinskii, N. N. Nevinnyi, and Kh. A. AbdullinElectron paramagnetic resonance (EPR) studies have been made of the stress-induced alignment and the subsequent recovery of the double donor (AA1 EPR center) that is formed in float-zone silicon following hydrogen implantation and annealing for ~ 20 min at a temperature above ~ 300 °C. The... (Read more)
- 277. J. Appl. Phys. 83, 4042 (1998) , “Electrically Detected Magnetic Resonance Signal from Iron Contaminated Czochralski Silicon Crystal”, T. Mchedlidze and K. MatsumotoThe electrical detection of magnetic resonance (EDMR) measurement, a detection method for the spin-dependent recombination, was applied to characterize iron contaminated silicon samples grown by the Czochralski method. The observed signal was different than previously reported electron paramagnetic... (Read more)
- 278. J. Appl. Phys. 83, 2449-2457 (1998) , “Electron spin resonance features of interface defects in thermal (100)Si/SiO2”, A. Stesmans and V. V. Afanas'evElectron spin resonance (ESR) on thermal (100)Si/SiO2 predominantly exhibiting either the Pb0 or Pb1 interface defect confirms the Pb1 point symmetry as monoclinic-I with g1 = 2.0058,... (Read more)
- 279. J. Chem. Phys. 109, 8471 (1998) , “Temperature dependence of spin-spin and spin-lattice relaxation times of paramagnetic nitrogen defects in diamond”, E. C. Reynhardt, G. L. High, J. A. van WykSpin-lattice relaxation times of P1 centers in a suite of two natural type Ib, two synthetic type Ib, and one natural type Ia diamonds were measured at 9.6 GHz as a function of temperature in the range 300 K > T > 4.2 K. An analysis of the results revealed that for three of the diamonds... (Read more)
- 280. J. Non-Cryst. Solids 241, 71-73 (1998) , “Long luminescent glass: Tb3+-activated ZnO–B2O–SiO2 glass”, Masaaki Yamazaki, Yoshinori Yamamoto, Shinobu Nagahama, Naruhito Sawanobori, Masafumi Mizuguchi , Hideo HosonoIt has been found that zinc borosilicate glasses 60ZnO–20B2O3–20SiO2 doped with 0.2 mol% Tb2O3 exhibit phosphorescence after exciting with 254 nm light. This phosphorescence arises from f–f transitions of Tb3+ ions and is observable by the eye, in the dark for up to 1 h after... (Read more)
- 281. J. Non-Cryst. Solids 239, 16-48 (1998) , “Optically active oxygen-deficiency-related centers in amorphous silicon dioxide”, Linards SkujaThe spectroscopic properties, structure and interconversions of optically active oxygen-deficiency-related point defects in vitreous silica are reviewed. These defects, the E′-centers (oxygen vacancies with a trapped hole or 3-fold-coordinated silicons), different variants of diamagnetic... (Read more)GeO2 SiO2| EPR PL gamma-irradiation optical-spectroscopy| 0.5-1.0eV 1.0eV~ 1H 2.0eV~ 3.0eV~ 4.0eV~ 5.0eV~(larger) Chlorine E' E'-alpha E'-betha E'-delta E'-gamma Germanium H(I) H(II) Hydrogen ODC ODC(I) ODC(II) OHC Oxygen POR Silicon amorphous dangling-bond dielectric interstitial pair(=2) surface triplet vacancy | last update: Takahide Umeda
- 282. J. Phys.: Condens. Matter 10, L465 (1998) , “29Si Hyperfine Structure of the Pb1 Interface Defect in Thermal (100)Si/SiO2”, A. Stesmans, B. Nouwen, V. V. Afanas’ev.The observation of the electron spin resonance hyperfine (hf) spectra associated with the unpaired electron of the interface defect in thermal shows that the dominant interaction arises from a single isotope. The hf tensor displays weakly monoclinic I (nearly axial) symmetry, with the... (Read more)
- 283. J. Phys.: Condens. Matter 10, L19 (1998) , “Undetectability of the Pb1 Point Defect as an Interface State in Thermal (100)Si/SiO2”, A. Stesmans, V. V. Afanas’ev.The electrical activity of the electron-spin-resonance-active interfacial point defects and (unpaired Si bonds) has been examined on standard thermal . After elimination of the H-passivation factor, this has been achieved through combination of electrical and ESR analysis on common suites of... (Read more)
- 284. J. Phys.: Condens. Matter 10, 9833 (1998) , “Optically detected electron paramagnetic resonance of Ni-related defects in synthetic diamond crystals”, Th. Pawlik, C. Noble, J. -M. SpaethSynthetic diamond crystals grown using a solvent catalyst that contains Ni were studied by optical detection of electron paramagnetic resonance (ODEPR) using the magnetic circular dichroism of the optical absorption (MCDA). The MCDA spectra in the infrared spectral region consist of a... (Read more)
- 285. J. Phys.: Condens. Matter 10, 89 (1998) , “Positively Charged Bonded States of Hydrogen at the (111)Si/SiO2 Interface”, V. V. Afanas’ev, A. Stesmans.Annealing of thermal in hydrogen in the temperature range is found to introduce a considerable density (up to ) of positively charged centres, ascribed to H bonding. However, there is no comparable density of dangling bonds initially present nor generated at the interface that could account for... (Read more)
- 286. J. Phys.: Condens. Matter 10, 11781 (1998) , “Electron paramagnetic resonance investigations of nickel defects in natural diamonds”, C. J. Noble, Th. Pawlik, J. -M. SpaethElectron paramagnetic resonance (EPR) and electron nuclear double resonance (ENDOR) spectra of natural blue diamonds from the Argyle mine in Western Australia are reported for the first time. These diamonds are shown to contain the NE2 centre which has been observed primarily in synthetic diamonds... (Read more)
- 287. J. Vac. Sci. Technol. B 16, 2134-2153 (1998) , “What can electron paramagnetic resonance tell us about the Si/SiO2 system?”, P. M. Lenahan, J. F. Conley, Jr.Electron paramagnetic resonance (EPR) measurements of Si/SiO2 systems began over 30 years ago. Most EPR studies of Si/SiO2 systems have dealt with two families of defects: Pb centers and E centers. Several variants from each group have... (Read more)BPSG PSG Si SiO2| EDMR EPR electric-field-effect electrical-meas. etching gamma-irradiation| 10B 11B 1H 29Si 2D 31P BOHC Boron Deuterium E' E'-delta H(I) Hydrogen Nb Nitrogen Oxygen P1 P2 P4 POHC Pb Pb0 Pb1 Phosphorus Silicon amorphous complex(=3) dangling-bond device dielectric interface pair(=2) | last update: Takahide Umeda
- 288. Mater. Lett. 33, 247-250 (1998) , “Electron spin resonance properties of ZnO microcrystallites”, Baolong Yu, Congshan Zhu, Fuxi Gan , Yabin HuangThe preparation of ZnO microcrystallites using a microemulsion method and their electron spin resonance (ESR) properties are reported for the first time. It was found that the ZnO microcrystallite exhibits an ESR signal at room temperature, in contrast to that of bulk ZnO. The results confirmed that... (Read more)
- 289. Mater. Sci. Eng. B 54, 38-42 (1998) , “Detection and analysis of 29Si hyperfine structures in ESR spectra of E′ and E′-type centers in SiO2 glasses”, M. Mizuguchi, H. Hosono, H. KawazoeFour sets of ESR doublets with splittings of 9, 23, 26 or 44 mT were observed in dry a-SiO2 (Type IV, OH concentrations1017 cm−3) implanted with 29Si+ to a fluence of 6×1016 cm−2 at 160 keV. These doublets were attributed to the hyperfine structures due to a 29Si nucleus of... (Read more)
- 290. Materials Lett. 34, 143 (1998) , “Defect formation in electron-irradiated synthetic diamond annealed in the temperature range 820–1120 K”, E. M. Shishonok, V. B. Shipilo, G. P. Popelnuk, I. I. Azarko, A. A. Melnikov and A. R. FilippThe phenomenon of the extreme increase of the concentration of dispersed paramagnetic nitrogen in electron-irradiated synthetic diamond specimens annealed in the temperature range 820–1120 K was revealed. It is established that the order of the reaction responsible for the decrease of... (Read more)
- 291. Nucl. Instrum. Methods Phys. Res. B 141, 566-574 (1998) , “Defect formation in amorphous SiO2 by ion implantation: Electronic excitation effects and chemical effects”, H. Hosono, N. MatsunamiIntrinsic defect formation in amorphous (a-) SiO2 by ion implantation was examined with emphasis upon electronic excitation effects and chemical reaction effects. 10 MeV proton beam and boron beam irradiated silica platelets to examine electronic excitation effects and chemical reaction effects. In... (Read more)
- 292. Nucl. Instrum. Methods Phys. Res. B 135, 260 (1998) , “Defect production in silicon irradiated with 750 MeV Ar ions1”, Z. Zhu, M. Hou, Y. Jin, C. Liu, Y. Wang, J. Han.Specimens of about 320 μm thick and 1 1 1 oriented single crystalline silicon are irradiated with 750 MeV argon ions at room temperature to dose levels of 9×1013 and 4.3×1014 Ar/cm2. Positron lifetime measurements, fourier transform infrared absorption (FT–IR) and electron... (Read more)
- 293. Nucl. Instrum. Methods Phys. Res. B 135, 219 (1998) , “Damage production in silicon irradiated with 112 MeV Ar ions1”, C. Liu, M. Hou, Z. Zhu, Z. Wang, S. Cheng, Y. Jin, Y. Sun, C. Li.Silicon samples were irradiated below 50 K with 112 MeV Ar ions. Defect production was investigated at room temperature by EPR and infrared optical absorption techniques. The EPR measurements reveal the presence of amorphous zones and neutral tetravacancies (Si–P3 center) in the as-irradiated... (Read more)
- 294. Phys. Rev. B 58, 7707 (1998) , “Optically detected magnetic resonance study of an arsenic-antisite–arsenic-vacancy complex in GaAs”, F. K. Koschnick, K.-H. Wietzke, and J.-M. SpaethAn arsenic-antisite-related defect produced in n-type GaAs by 2 MeV electron irradiation was investigated using magnetic circular dichroism of the optical absorption (MCDA), MCDA-detected electron paramagnetic resonance (MCDA-EPR), and MCDA-detected electron-nuclear double resonance (MCDA-ENDOR). In... (Read more)
- 295. Phys. Rev. B 58, 7007 (1998) , “Sulfur-Related Metastable Luminescence Center in Silicon”, P. W. Mason, H. J. Sum, B. Ittermann, S. S. Ostapenko, G. D. Watkins, L. Jeyanathan, M. Singh, G. Davies, E. C. Lightowlers.Optical detection of magnetic resonance (ODMR) and photoluminescence (PL) studies are described for the sulfur-related metastable defect in silicon first reported by Brown and Hall. It is established that its two configurations, A and B, are of triclinic (C1) symmetry, and the... (Read more)
- 296. Phys. Rev. B 58, 3842 (1998) , “Electron Paramagnetic Resonance Study of Hydrogen-Vacancy Defects in Crystalline Silicon”, P. Stallinga, P. Johannesen, S. Herstm, K. Bonde Nielsen, B. Bech Nielsen, J. R. Byberg.Electron paramagnetic resonance measurements on float-zone silicon implanted with protons at ?50 K followed by heating to room temperature have revealed two signals S1a and S1b belonging to the S1 group of signals. S1a and S1b both originate from defects... (Read more)
- 297. Phys. Rev. B 58, 15801-15809 (1998) , “Pb1 interface defect in thermal (100)Si/SiO2: 29Si hyperfine interaction”, A. Stesmans, B. Nouwen, V. V. Afanas’evAn optimized electron spin resonance study has resulted in the observation of the full angular dependence of the hyperfine interaction spectrum associated with the unpaired electron of the Pb1 point defect at the thermal (100)Si/SiO2 interface, showing that the dominant... (Read more)
- 298. Phys. Rev. B 57, 9657 (1998) , “Self-Interstitial Shallow-Donor Complexes in Silicon: An Electron-Paramagnetic-Resonance Study”, O. Scheerer, U. Juda, and M. HöhneAn electron-paramagnetic-resonance (EPR) study on silicon samples quenched after diffusion of gold (or platinum) from a metallic layer on the surface results in the presence of two types of paramagnetic centers replacing the donor P center. According to the analysis these centers consist of a P... (Read more)
- 299. Phys. Rev. B 57, 2302 (1998) , “EPR and optical studies on polycrystalline diamond films grown by chemical vapor deposition and annealed between 1100 and 1900 K”, D. F. Talbot-Ponsonby, M. E. Newton, J. M. Baker, G. A. Scarsbrook, R. S. Sussmann, A. J. WhiteheadThe affect of annealing polycrystalline chemical vapor deposition (CVD) diamond in vacuo up to 1900 K has been studied using electron paramagnetic resonance (EPR) and infrared absorption. The concentration of the EPR centers at g=2.0028 and the infrared absorption in the CH region are insensitive to... (Read more)
- 300. Phys. Rev. B 57, 2264 (1998) , “Multifrequency EPR, 1H ENDOR, and saturation recovery of paramagnetic defects in diamond films grown by chemical vapor deposition”, D. F. Talbot-Ponsonby, M. E. Newton, J. M. Baker, G. A. Scarsbrook, R. S. Sussmann, A. J. Whitehead, S. PfenningerParamagnetic defects in free-standing polycrystalline chemical vapor deposition (CVD) diamond films have been studied using multifrequency electron paramagnetic resonance (EPR) (1–35 GHz), electron-nuclear double resonance (ENDOR), saturation recovery, and infrared absorption. The results confirm... (Read more)
- 301. Phys. Rev. B 57, 1607 (1998) , “Electronic structure of the deep boron acceptor in boron-doped 6H-SiC”, A. v. Duijn-Arnold, T. Ikoma, O. G. Poluektov, P. G. Baranov, E. N. Mokhov, J. SchmidtA high-frequency (95 GHz) and conventional-frequency (9.3 GHz) pulsed electron paramagnetic resonance and electron-nuclear double resonance (ENDOR) study is reported on the deep boron acceptor in 6H-SiC. The results support a model in which the deep boron acceptor consists of a boron on a silicon... (Read more)
- 302. Phys. Rev. B 57, 10030 (1998) , “Electrical Activity of Interfacial Paramagnetic Defects in Thermal (100) Si/SiO2”, A. Stesmans, V. V. Afanas’ev.The correlation between the detrimental electrically active interface traps and the electron-spin-resonance-active point defects Pb0 and Pb1 (unpaired Si orbitals) was studied through controlled variation, both relatively and absolutely, of the defect bath densities. Unlike... (Read more)
- 303. Phys. Rev. Lett. 80, 423 (1998) , “Chen et al. Reply:”, W. M. Chen, O. O. Awadelkarim, B. Monemar, J. L. Lindström, G. S. Oehrlein.A Reply to the Comment by P. Stallinga and B. Bech Nielsen. (Read more)
- 304. Phys. Rev. Lett. 80, 422 (1998) , “Comment on “Microscopic Identification and Electronic Structure of a Di-Hydrogen–Vacancy Complex in Silicon by Optical Detection of Magnetic Resonance””, P. Stallinga and B. Bech NielsenA Comment on the Letter by W. M. Chen, et al., Phys. Rev. Lett. 64, 3042 (1990). The authors of the Letter offer a Reply. (Read more)
- 305. Phys. Rev. Lett. 80, 317-320 (1998) , “Experimental Evidence for Frenkel Defect Formation in Amorphous SiO2 by Electronic Excitation”, H. Hosono, H. Kawazoe, N. MatsunamiConcentrations of defects in amorphous SiO2 created by implantation of 10 MeV protons were examined. The depth profile of Si-Si bonds, E? centers, or peroxy radicals (PORs) was close to that of electronic energy loss. Interstitial O2 molecules were identified and... (Read more)
- 306. Phys. Rev. Lett. 80, 1489 (1998) , “Electron Exchange Interaction in S = 1 Defects Observed by Level Crossing Spin Dependent Microwave Photoconductivity in Irradiated Silicon”, R. Laiho, M. M. Afanasjev, M. P. Vlasinko, L. S. Vlasenko.Spin dependent change of photoconductivity is observed for the first time at magnetic field induced crossing of a ground singlet (S = 0) and an excited triplet (S = 1) state levels of structural defects in irradiated silicon. These defects include two electrons localized on points of trigonal... (Read more)
- 307. Phys. Solid State 40, 195 (1998) , “Depth Distribution of Point Defects in Si Bombarded by High-Energy N5+ and Si5+ Ions”, A. V. Dvurechenski?, A. A. Karanovich, R. Grtzschel, F. Herrmann, R. Kegler, A. V. Rybin.Electron spin resonance has been used to study the depth distribution of point defects in Si samples bombarded by N5+ (E=16 MeV) and Si5+ (E=26.8 MeV) ions at 175 and 300 K in the dose range (4–8)×1015 cm-2. It was established that unlike the implantation of moderate-energy Si ions (E ∼ 100 keV), the depth distributions of planar tetravacancies in samples bombarded by ions at 300 K under these conditions have two maxima. The experimental results indicate that the tetravacancy density maximum closer to the surface is formed as a result of secondary defect formation processes. No continuous amorphous layer was observed in the bulk of any of the Si samples. This experimental observation is evidence of defect annealing which takes place when high-energy ions are implanted in Si. (Read more)
- 308. Phys. Solid State 40, 1648 (1998) , “Electron paramagnetic resonance of defects with metastable properties in crystalline GaN”, P. G. Baranov, I. V. Il'in, E. N. Mokhov, V. A. KhramtsovAn EPR study of GaN revealed the presence of defects exhibiting metastable properties. EPR spectra of two centers (ii1a and ii1b) with axial symmetry along the hexagonal axis of the crystal, which have strongly anisotropic g factors, were observed. The anisotropy of the spectra decreases, and the line shape changes, with increasing temperature. The spectra of the ii1a and ii1b centers disappear at 25 and 50 K, respectively. Subsequent cooling of the samples does not restore the EPR signals, which implies that one observes here phenomena inherent in defects with metastable states. To restore EPR signals, one has to warm the samples to room temperature under very specific conditions. The possible microstructure of the discovered defects is discussed. (Read more)
- 309. phys. stat. sol. (a) 168, 73 (1998) , “Self-Interstitials in Silicon Irradiated with Light Ions”, B. N. Mukashev, Kh. A. Abdullin, Yu. V. Gorelkinskii.The behavior of self-interstitials in silicon which was irradiated with light ions (protons and -particles) and electrons was explored by monitoring known impurity interstitial centers (Ci, Ali, (Si-O)i) with deep level transient spectroscopy (DLTS) and electron... (Read more)
- 310. phys. stat. sol. (b) 210, 753 (1998) , “Identification of a Donor State of Substitutional Cadmium in Silicon”, A. Näser, W. Gehlhoff, H. Overhof, R. A. Yankov.The structural and electronic properties of cadmium in p-type silicon were studied by means of EPR. Cd was diffused in one set of samples whereas in a second set we used high energy implantations in the MeV range for doping, followed by a high temperature annealing step at 1200 (Read more)
- 311. phys. stat. sol. (b) 210, 747 (1998) , “Nonlinear Zeeman Splitting of the Si:Be - s Acceptor Ground State: Influence of the p1/2 Split-Off Valence Band?”, H. Schroth, K. Lassmann, Chr. Borgmann, H. Bracht.Electric-dipole spin resonance (EDSR) spectra at 24, 34, and 60 GHz of Si:Be show six absorption lines with characteristics similar to those previously observed for the +8 ground state of group-III single acceptors. From the dependence on Fermi level position we attribute these... (Read more)
- 312. phys. stat. sol. (b) 210, 631 (1998) , “Confinement Effects of Phosphorus Donors Embedded in Silicon Microcrystals”, B. J. Pawlak, T. Gregorkiewicz, C. A. J. Ammerlaan.Due to their extended electronic structure shallow donors are believed to be very sensitive to confinement effects. Our interest is to investigate the influence of size on the properties of shallow donor phosphorus in mechanically milled silicon microcrystals. The crystallinity of powders is... (Read more)
- 313. phys. stat. sol. (b) 210, 545 (1998) , “EPR Study of Hydrogen-Related Radiation-Induced Shallow Donors in Silicon”, V. P. Markevich, T. Mchedlidze, M. Suezawa, L. I. Murin.An electron paramagnetic resonance (EPR) study of hydrogen-related radiation-induced shallow donors in silicon has been performed. Three species of this donor family (D1-D3) were observed earlier by means of infrared absorption measurements in hydrogenated Czochralski-grown Si (Cz-Si) crystals after... (Read more)
- 314. phys. stat. sol. (b) 210, 539 (1998) , “Individual Thermal Donor Species Studied with High-Field Magnetic Resonance”, R. Dirksen, T. Gregorkiewicz, C. A. J. Ammerlaan.Thermal donors generated in p-type boron-doped Czochralski-grown silicon by a 450 °C heat treatment have been studied by high-field magnetic resonance spectroscopy. The experiments were conducted at a microwave frequency of 140 GHz and in a magnetic field of approximately 5 T. The symmetry of the... (Read more)
- 315. phys. stat. sol. (b) 210, 415-427 (1998) , “The Microscopic and Electronic Structure of Shallow Donors in SiC”, S. Greulich-WeberNitrogen donors in 6H-, 4H- and 3C-SiC were investigated using conventional electron paramagnetic resonance (EPR) and electron nuclear double resonance (ENDOR) and the experimental results are discussed. An attempt is presented to interpret the experimentally found large differences in hyperfine... (Read more)
- 316. Semicond. Sci. Technol. 13, 725 (1998) , “Electron Nuclear Double Resonance Investigation of Iron-Acceptor Pairs in Silicon”, J. –M. Spaeth, S. Martini, S. Greulich-Weber.With stationary electron nuclear double resonance (ENDOR) the two - pairs having trigonal and orthorhombic symmetry, respectively, and the trigonal - pair have been investigated. The hyperfine and quadrupole interactions with the interstitial and the acceptor nuclei and , respectively, have been... (Read more)
- 317. Semiconductors 32, 375 (1998) , “Observation of Low-Temperature Diffusion of Aluminum Impurity Atoms in Hydrogen-Implanted Silicon”, Yu. V. Gorelkinski?, B. N. Mukashev, Kh. A. Abdullin.
- 318. Appl. Phys. Lett. 71, 1703 (1997) , “Al–Al pair in silicon: Evidence for long-range hydrogen-enhanced aluminum migration”, Kh. A. Abdullin, B. N. Mukashev, and Yu. V. GorelkinskiiIn this letter, we present results of electron paramagnetic resonance studies of new defects (labeled Si-AA15 and Si-AA16) incorporated aluminum atoms. The AA15 defect is created in hydrogen-doped silicon by low temperature (~ 80 K) irradiation, and an 27Al (100% abundant, I = 5/2)... (Read more)
- 319. Appl. Phys. Lett. 70, 1137 (1997) , “In situ electron-spin-resonance measurements of film growth of hydrogenated amorphous silicon”, Satoshi Yamasaki, Takahide Umeda, Junichi Isoya, and Kazunobu TanakaIn situ electron-spin-resonance (ESR) measurements of film growth of hydrogenated amorphous silicon (a-Si:H) using a remote hydrogen plasma technique have been performed. The Si dangling-bond signal in a-Si:H during and after deposition has been detected, in addition to the... (Read more)
- 320. Appl. Surf. Sci. 117-118, 574 (1997) , “ESR characterization of defects produced in diamond surface by B ion implantation”, Y. Show, F. Matsuoka, T. Izumi, M. Deguchi, M. Kitabatake, H. Sakakima, T. Hirao, Y. Mori, A. Hatta, T. Ito, A. HirakiThe defects produced by B ion implantation into CVD diamond films have been investigated by the electron spin resonance (ESR) method. The ESR analysis revealed the Pac-center (g = 2.003, ΔHPP = 10−16 Oe), which originates from carbon dangling bonds in the non-diamond phase carbon... (Read more)
- 321. Diamond Relat. Mater. 6, 778 (1997) , “Minimization of the defects concentration from boron incorporation in polycrystalline diamond films”, E. Colineau, E. Gheeraert, A. Deneuville, J. Mambou, F. Brunet and J. P. LagrangeElectron spin resonance, Raman diffusion and X-ray diffraction spectra of boron-doped diamond thin films were recorded. Both the signals related to particular defects (ESR, luminescence) or those related to the total concentration of defects (linewidth of the diamond Raman line, width of the X-ray... (Read more)
- 322. Diamond Relat. Mater. 6, 516 (1997) , “Nitrogen doping of diamond by ion implantation”, R. Kalish, C. Uzan-Saguy, B. Philosoph, V. Richter, J. P. Lagrange, E. Gheeraert, A. Deneuville, A. T. CollinsNitrogen doping is used to achieve field emission from diamond, and hence it is important to be able to dope diamond with nitrogen in a controlled way, such as that offered by ion implantation. The procedure developed for optimising p-type doping of diamond by B ion-implantation (cold implantation... (Read more)
- 323. Diamond Relat. Mater. 6, 356 (1997) , “ESR studies of incorporation of phosphorus into high-pressure synthetic diamond”, J. Isoya, H. Kanda, M. Akaishi, Y. Morita, T. OhshimaElectron spin resonance (ESR) signals associated with phosphorus, which should give microscopic evidence of incorporation of phosphorus into the lattice of diamond, have been searched in high-pressure synthetic diamond crystals. In a crystal grown from phosphorus catalyst, a new ESR spectrum... (Read more)
- 324. J. Appl. Phys. 82, 3456 (1997) , “Carbon-Related Platinum Defects in Silicon: An Electron Paramagnetic Resonance Study of High Spin States”, O. Scheerer, M. Höhne, U. Juda, and H. RiemannIn this article, we report about complexes in silicon investigated by electron paramagnetic resonance (EPR). In silicon doped with C and Pt we detected two different complexes: cr-1Pt (cr: carbon-related, 1Pt: one Pt atom) and cr-3Pt. The complexes have similar EPR properties. They show a trigonal... (Read more)
- 325. J. Appl. Phys. 82, 1201 (1997) , “Electron paramagnetic resonance imaging of the distribution of the single substitutional nitrogen impurity through polycrystalline diamond samples grown by chemical vapor deposition”, D. F. Talbot-Ponsonby, M. E. Newton, and J. M. BakerThe distribution of the single substitutional nitrogen impurity (NS0" align="middle">) through the thickness of diamond films grown by chemical vapor deposition has been studied using Electron Paramagnetic Resonance imaging. The design of an Electron Paramagnetic Resonance imaging... (Read more)
- 326. J. Appl. Phys. 81, 7468 (1997) , “Electron Paramagnetic Resonance of Porous Silicon: Observation and Identification of Conduction-Band Electrons”, C. F. Young, E. H. Poindexter, G. J. Gerardi.New features in electron paramagnetic resonance (EPR) of porous silicon have been examined here. A new isotropic EPR center was observed at g=1.9995(1) at T=4.2 K, in both p-type and n-type porous silicon. By comparing its g value with those of shallow donors in... (Read more)
- 327. J. Appl. Phys. 81, 234 (1997) , “Characterization of textured polycrystalline diamond by electron spin resonance spectroscopy”, C. F. O. Graeff, C. E. Nebel, M. Stutzmann, A. Flöter, R. ZachaiElectron spin resonance (ESR) is shown to be a useful and versatile technique for the detection and characterization of preferred orientation effects in polycrystalline diamond films. A nitrogen related center known as P1 is used for this purpose. The ESR signal coming from this center is... (Read more)
- 328. J. Appl. Phys. 81, 1109 (1997) , “Stress-induced alignment of NL8 thermal donors in silicon: Energetics and kinetics”, J. M. Trombetta, G. D. Watkins, J. Hage, P. Wagner.Preferential alignment is produced for the NL8 thermal double donors (TDDs) when uniaxial stress is applied during their formation at ~ 450 °C. The recovery kinetics reveal that they can reorient readily on the time scale of their lifetime and their individual alignments therefore reflect the... (Read more)
- 329. J. Cryst. Growth 174, 751-756 (1997) , “Investigation of the interfacial quality and the influence of different substrates in ZnSe homoepitaxy”, H. Wenisch, T. Behr, J. Kreissl, K. Schüll, D. Siche, H. Hartmann , D. HommelZnSe substrates grown by the seeded chemical vapour transport and recrystallization as well as by the Bridgman method are compared for their use in molecular beam epitaxy. Intrinsic and extrinsic defects were analysed by low-temperature photoluminescence and especially by... (Read more)
- 330. J. Phys. D: Appl. Phys. 30, 1790 (1997) , “The dependences of ESR line widths and spin-spin relaxation times of single nitrogen defects on the concentration of nitrogen defects in diamond”, J. A. van Wyk, E. C. Reynhardt, G. L. High, I. Kiflawi
- 331. J. Phys.: Condens. Matter 9, 3299 (1997) , “Reply to the Comment on ‘Creation of Pb Interface Defects in Thermal Si/SiO2 through Annealing’”, A. Stesmans, V. V. Afanas’ev.Regarding the electron spin resonance work (Stesmans and Afanas'ev (1996) J. Phys.: Condens. Matter 8 L505) reporting on a newly resolved interface defect generation mechanism operative during postoxidation annealing in inert ambient above , Stathis ( J. Phys.: Condens.... (Read more)
- 332. J. Phys.: Condens. Matter 9, 3297 (1997) , “Comment on ‘Creation of Pb Interface Defects in Thermal Si/SiO2 through Annealing’”, J. H. Stathis.Some suggestions are offered to explain the discrepancies between the work of Stesmans and others. (Read more)
- 333. Jpn. J. Appl. Phys. 36, 7035 (1997) , “Improved Properties of Silicon Nitride Films Prepared by the Catalytic Chemical Vapor Deposition Method”, S. Okada, H. MatsumuraThe properties of silicon nitride (SiNx) films produced by the catalytic chemical vapor deposition (cat-CVD) method are extensively studied for device application. In the cat-CVD method, the deposition gases such as a silane (SiH4) and ammonia (NH3) gas... (Read more)
- 334. Jpn. J. Appl. Phys. 36, 6807 (1997) , “Relation between the Metastability and the Configuration of Iron-Acceptor Pairs in Silicon”, H. Takahashi, M. Suezawa, K. Sumino.To determine the energy differences between the first and second nearest-neighbor iron (Fe)-acceptor pairs in silicon, the generation and annihilation processes of these pairs were investigated by means of electron spin resonance (ESR). Isochronal annealing of the Fe-doped specimen revealed... (Read more)
- 335. Nucl. Instrum. Methods Phys. Res. A 395, 76-80 (1997) , “Optical deep-level transient characterisation of gamma-irradiated semi-insulating gallium arsenide”, Say Teng Lai, Dimitri Alexiev, Claude Schwab , Ian DonnellyA unique optical deep-level transient conductance spectroscopy (ODLTCS) technique has been employed for studying undoped semi-insulating (SI) GaAs material. In the undoped SI GaAs, the Fermi-level first shifts towards gamma irradiation of the conduction band at low γ fluence and then towards... (Read more)
- 336. Nucl. Instrum. Methods Phys. Res. B 127-128, 217 (1997) , “Defects in ion implanted diamond films (ESR study)”, Yoshiyuki Show, Tomio Izumi, Masahiro Deguchi, Makoto Kitabatake, Takashi Hirao, Yusuke Morid, Akimitsu Hatta, Toshimichi Ito and Akio HirakiThe defect structures in ion implanted diamond films have been studied by the electron spin resonance (ESR) method. Two kinds of paramagnetic defect centers were observed in ion implanted layers. One was a carbon dangling bond that existed in crystalline diamond (g = 2.003, ΔHpp = 3 Oe), and... (Read more)
- 337. Phys. Rev. B 56, R12695 (1997) , “Silicon Incorporation in a Shallow Donor Center in Hydrogenated Czochralski-Grown Si Crystals: An EPR Syudy”, V. P. Markevich, T. Mchedlidze, and M. SuezawaAn electron paramagnetic resonance (EPR) signal, labeled TU1, has been found in hydrogenated Czochralski-grown Si crystals after irradiation with fast electrons and annealing at 300–400 °C. An isotropic g factor of 1.9987 indicates the shallow donor nature of the defect giving rise to the signal.... (Read more)
- 338. Phys. Rev. B 56, 7422 (1997) , “High-field spin resonance of weakly bound electrons in GaAs”, M. Seck, M. Potemski, and P. WyderElectron spin resonance (ESR) of shallow donor electrons in n-type GaAs has been observed by means of direct detection of microwave absorption at magnetic fields of 6–11 T. The ESR structure is smeared out over a magnetic field range of up to 1 T. The line shape is strongly asymmetric and depends... (Read more)
- 339. Phys. Rev. B 56, 7384 (1997) , “Negatively charged Si vacancy in 4H SiC: A comparison between theory and experiment”, T. Wimbauer, B. K. Meyer, A. Hofstaetter, A. Scharmann, H. OverhofWe use electron paramagnetic resonance and electron nuclear double resonance to identify the negatively charged Si vacancy in neutron-irradiated 4H SiC. The identification is based on resolved ligand hyperfine interactions with carbon and silicon nearest and next nearest neighbors and on the... (Read more)
- 340. Phys. Rev. B 56, 6392 (1997) , “EPR identification of the ?100?-split [B-N]+ interstitialcy in diamond”, J. Isoya, H. Kanda, Y. MoritaBased on the 11B and 14N hyperfine interactions determined by using the electron paramagnetic resonance technique, the NIRIM-4 center in electron-irradiated boron-doped synthetic diamond crystal has been identified as a ?100?-split [B-N]+ interstitialcy. The... (Read more)
- 341. Phys. Rev. B 56, 4620 (1997) , “Copper-Related Defects in Silicon: Electron-Paramagnetic-Resonance Identification”, P. N. Hai, T. Gregorkiewicz, C. A. J. Ammerlaan, D. T. Don.In this paper the observation of two electron-paramagnetic-resonance spectra, both present in p-type silicon samples after doping with silver, is reported. The two centers show a symmetry lower than cubic and have an effective electron spin S=1/2. In view of the detected hyperfine interaction with... (Read more)
- 342. Phys. Rev. B 56, 4614 (1997) , “Electron-Paramagnetic-Resonance Study of Silver-Induced Defects in Silicon”, P. N. Hai, T. Gregorkiewicz, C. A. J. Ammelaan, D. T. Don.In this paper two electron-paramagnetic-resonance spectra are reported in silicon doped with silver in a water vapor atmosphere. These centers, labeled Si-NL56 and Si-NL57, show the orthorhombic-I and trigonal symmetries, respectively, and an effective electron spin S=1/2. Based on studies with... (Read more)
- 343. Phys. Rev. B 56, 16033 (1997) , “Reply to "Comment on ‘Electronic structure of the N-V center in diamond: Theory’"”, A. Lenef, S. C. RandWe present insights into the electronic structure and relaxation of N-V color centers in diamond which support the contention that Jahn-Teller effects may play a very significant role in the excited E state. We also consider several opposing arguments, but show that the unusual relaxation behavior... (Read more)
- 344. Phys. Rev. B 56, 16031 (1997) , “Comment on "Electronic structure of the N-V center in diamond: Theory"”, J. P. Goss, R. Jones, P. R. Briddon, G. Davies, A. T. Collins, A. Mainwood, J. A. van Wyk, J. M. Baker, M. E. Newton, A. M. Stoneham, S. C. LawsonIt is argued that the model advanced by Lenef and Rand [Phys. Rev. B 53, 13 441 (1996)] for the nitrogen-vacancy center in diamond, exhibiting the 1.945-eV luminescence is incorrect. Lenef and Rand argue that the electronic ground state consists of two electrons occupying a1 states... (Read more)
- 345. Phys. Rev. B 56, 15685 (1997) , “Zeeman Study of the Orthorhombic FeIn Pair Center in Silicon”, Mats Kleverman and Per TidlundThe excitation spectrum of the neutral orthorhombic (C2v) FeIn center in silicon has been studied by Fourier transmission infrared spectroscopy. The Zeeman results show that the electronic structure of the ground and excited state is similar. Both comprise two nearby Kramers doublets... (Read more)
- 346. Phys. Rev. B 56, 10221 (1997) , “Optically detected electron-paramagnetic-resonance investigations of the substitutional oxygen defect in gallium arsenide”, F. K. Koschnick, M. Linde, M. V. B. Pinheiro, and J.-M. SpaethThe substitutional oxygen defect in GaAs has been investigated with magnetic circular dichroism of the absorption, optically detected electron paramagnetic resonance, and optically detected electron-nuclear double resonance (ODENDOR). The ODENDOR spectra can be explained with an oxygen atom... (Read more)
- 347. Phys. Rev. B 55, 16245 (1997) , “Electron Paramagnetic Resonance of Conduction-Band Electrons in Silicon”, C. F. Young, E. H. Poindexter, G. J. Gerardi, W. L. Warren, D. J. Keeble.The g value of conduction-band electrons in silicon was properly determined by using electron paramagnetic resonance. A linear empirical relationship was first found between the g values and the thermal ionization energies of several well-known group-V substitutional shallow donors in silicon. An... (Read more)
- 348. Phys. Rev. Lett. 79, 1507 (1997) , “Identification of the Silicon Vacancy Containing a Single Hydrogen Atom by EPR”, B. Bech Nielsen, P. Johannesen, P. Stallinga, K. Bonde Nielsen
- 349. phys. stat. sol. (a) 162, 95-151 (1997) , “EPR and ENDOR Investigations of Shallow Impurities in SiC Polytypes”, S. Greulich-WeberInvestigations of nitrogen donors in 6H-, 4H- and 3C-SiC using conventional electron paramagnetic resonance (EPR), electron nuclear double resonance (ENDOR) and optical detection of EPR and ENDOR as well as optical absorption and emission spectroscopy are reviewed and critically discussed. An... (Read more)
- 350. Rev. Sci. Instrum. 68, 2511 (1997) , “Sensitivity enhancement in magnetic circular dichroism of absorption-detected electron paramagnetic resonance with a mirror cavity”, F. K. KoschnickA mirror cavity was developed to improve the signal to noise (S/N) ratio of the measurement of the magnetic circular dichroism of the absorption (MCDA) and of the MCDA-detected electron paramagnetic resonance (EPR). In this cavity the measurement light beam passes through the sample several times... (Read more)
- 351. Rev. Sci. Instrum. 68, 1823 (1997) , “Magnetic Resonance Force Detection and Spectroscopy of Electron Spins in Phosphorus-Doped Silicon”, K. Wago, O. Züger, J. Wegener, R. Kendrick, C. S. Yannoni, and D. RugarElectron spin resonance (ESR) of phosphorus-doped silicon was detected using a low temperature magnetic resonance force microscope (MRFM). Force-detected ESR spectra were obtained using an amplitude or frequency modulated microwave field to cyclically saturate the spin magnetization. For a sample... (Read more)
- 352. Semicond. Sci. Technol. 12, 1404 (1997) , “Shallow Thermal Donors Associated with H, Al and N in Annealed Czochralski Silicon Distinguished by Infrared Spectroscopy”, R. E. Pritchard, M. J. Ashwin, J. H. Tucker, R. C. Newman, E. C. Lightowlers, T. Gregorkiewicz, I. S. Zevenbergen, C. A. J. Ammerlaan, R. Falster, M. J. Binns.Electronic transitions of shallow thermal donors (STDs) in aluminium-doped Czochralski (CZ) Si annealed at C have different energies from those of STDs observed in annealed, hydrogenated boron-doped CZ Si. A third type of STD is observed in boron-doped Si pre-heated in nitrogen gas and annealed... (Read more)
- 353. Solid State Commun. 102, 715-720 (1997) , “Nuclear spin relaxation in AlGaAs/GaAs heterostructures observed via optically detected magnetic resonance (ODMR) experiments”, M. Schreiner, H. Pascher, G. Denninger, S. A. Studenikin, G. Weimann and R. LöschThe resonant field at which an electron spin resonance (ESR) occurs may be shifted by an effective magnetic field, which is due to spin polarized nuclei. This shift, known as Overhausershift, is caused by the field of all polarized nuclei without respect to their isotopic number. Irradiation of the... (Read more)
- 354. Solid State Commun. 102, 595 (1997) , “Thermally Activated Change of Symmetry of Carbon Related Center in Irradiated Silicon”, M. M. Afanasjev,R. Laiho, L. S. Vlasenko and M. P. VlasenkoTwo electron paramagnetic resonance (EPR) spectra related to the excited spin-1 state of a carbon-silicon-carbon complex are detected in irradiated silicon with microwave spin dependent photoconductivity measurements. They indicate transformation of the complex from monoclinic to trigonal symmetry... (Read more)
- 355. Solid State Commun. 101, 611-615 (1997) , “Identification of iron transition group trace impurities in GaN bulk crystals by electron paramagnetic resonance”, P. G. Baranov, I. V. Ilyin and E. N. MokhovWe report on the observation of electron paramagnetic resonance of iron, manganese and nickel trace impurities in bulk GaN crystals grown by the sublimation sandwich method. The resolved hyperfine structure due to interaction with 55Mn (I = 5/2) nuclei has been observed in GaN, allowing unambiguous... (Read more)
- 356. Solid State Commun. 101, 219-223 (1997) , “Compensation center of Cr3+ in GaAs codoped with Cr and In for obtaining a semi-insulating property”, Y. J. Park, T. H. Yeom, I. -W. Park, S. H. Choh , S. -K. MinThe dependences of Cr2+ and Cr3+ electron paramagnetic resonance (EPR) signals as a function of Cr concentration have been investigated in conjunction with clarifying the atomic configuration for obtaining semi-insulating properties in a vertical gradient freeze (VGF)-GaAs single crystal codoped... (Read more)
- 357. Appl. Phys. Lett. 69, 3854 (1996) , “Electron Paramagnetic Resonance of Erbium Doped Silicon”, J. D. Carey, J. F. Donegan, R. C. Barklie, F. Priolo, G. Frenzò, S. Coffa.Electron paramagnetic resonance measurements have been made on samples of float zone silicon, implanted with 1015 Er/cm2. One sample was coimplanted with oxygen to give an impurity concentration of 1020 O/cm3 and 1019 Er/cm3. In this... (Read more)
- 358. Appl. Phys. Lett. 69, 3836 (1996) , “Electron paramagnetic resonance characterization of diamond films fabricated with different methane concentrations”, D. J. Keeble, B. RamakrishnanElectron paramagnetic resonance (EPR) studies were performed on thin diamond films fabricated by hot-filament chemical vapor deposition using methane concentrations varying from 0.25% to 5%. The bulk spin concentration and the peak to peak linewidth for the characteristic g=2.0027(2) EPR... (Read more)
- 359. Appl. Phys. Lett. 69, 3215 (1996) , “Optical excitation of paramagnetic nitrogen in chemical vapor deposited diamond”, C. F. O. Graeff, E. Rohrer, C. E. Nebel, M. Stutzmann, H. Güttler, R. ZachaiInvestigations of polycrystalline chemical vapor deposited diamond films by electron-spin-resonance (ESR), light-induced (L)ESR, and the constant photoconductivity method have identified dispersed substitutional nitrogen (P1 center) as the main paramagnetic form of N incorporated in the CVD diamond.... (Read more)
- 360. Appl. Phys. Lett. 69, 2252 (1996) , “Hole traps in oxide layers thermally grown on SiC”, V. V. Afanas'ev and A. StesmansHole trapping in the oxides thermally grown on different polytypes of SiC (3C, 4H, 6H) was studied using photogeneration of charge carriers in SiO2 and electron-spin-resonance spectroscopy. Oxygen vacancy defects were found to be the dominant hole traps in the oxide. Generation of... (Read more)
- 361. Appl. Phys. Lett. 68, 403 (1996) , “Correlation between photoluminescence and oxygen vacancies in ZnO phosphors”, K. Vanheusden, C. H. Seager, W. L. Warren, D. R. Tallant, and J. A. VoigtBy combining electron paramagnetic resonance (EPR), optical absorption, and photoluminescence (PL) spectroscopy, a strong correlation is observed between the green 510 nm emission, the free-carrier concentration, and the density of singly ionized oxygen vacancies in commercial ZnO phosphor powders.... (Read more)
- 362. Appl. Phys. Lett. 68, 2723 (1996) , “Revision of H2 passivation of Pb interface defects in standard (111)Si/SiO2”, A. Stesmans.Passivation with molecular H2 of Pb interface defects in thermal (111)Si/SiO2 (dry; 870 °C) over extended temperature (TH) and time (tH) ranges unveil nonexponential decay of [Pb] vs... (Read more)
- 363. Appl. Phys. Lett. 68, 2123 (1996) , “Concentration of paramagnetic centers in boron doped polycrystalline diamond films”, E. Colineau, A. Deneuville, J. Mambou, and E. GheeraertThough no boron signal is identified, with respect to their boron content the narrow and broad components of the electron spin resonance signal in boron doped polycrystalline film decrease from 1018 to 1016 cm 3. This is ascribed to two different structural... (Read more)
- 364. Appl. Phys. Lett. 68, 2076 (1996) , “Passivation of Pb0 and Pb1 Interface Defects in Thermal (100) Si/SiO2 with Molecular Hydrogen”, A. Stesmans.It is found that the passivation of both the Pb0 and Pb1 defects in (100)Si/SiO2 (grown at < 750 °C) with molecular H2 may well be described by the same defect- H2 reaction-limited kinetic model applying to... (Read more)
- 365. Appl. Phys. Lett. 68, 1102 (1996) , “Electrical Detection of Electron Nuclear Double Resonance in Silicon”, B. Stich, S. Greulich-Weber, J. –M. Spaeth.Electrical detection of electron nuclear double resonance (EDENDOR) is demonstrated using shallow P donors in silicon. The EDENDOR spectra are compared with conventional ENDOR spectra. With EDENDOR, both the 31P hyperfine as well as 29Si superhyperfine interactions could be... (Read more)
- 366. Diamond Relat. Mater. 5, 1113 (1996) , “Spatial distribution of impurity defects in synthetic diamonds obtained by the BARS technology1”, A. Yelisseyev, V. Nadolinny, B. Feigelson, S. Terentyev, S. NosukhinLuminescence and optical transmission topography reveal the inhomogeneities in distribution of impurity nitrogen and nickel-related defects in synthetic diamonds obtained in high-pressure apparatus of the split-sphere type (Russian acronym: BARS). Owing to considerable supersaturations and... (Read more)
- 367. J. Appl. Phys. 80, 6198 (1996) , “Recombination-enhanced Fe atom jump between the first and the second neighbor site of Fe–acceptor pair in Si”, S. Sakauchi, M. Suezawa, K. Sumino, H. Nakashima.We studied the recombination-enhanced Fe atom jump between the first (1st) and second (2nd) neighbor sites of FeAl and FeB pairs in Si. We first annealed specimens at 80 °C to generate Feacceptor pairs after doping of Fe. Concentrations of the 1st and 2nd neighbor... (Read more)
- 368. J. Appl. Phys. 80, 5234 (1996) , “Electron paramagnetic resonance of Nb-doped BaTiO3 ceramics with positive temperature coefficient of resistivity”, S. Jida, T. MikiParamagnetic centers in Nb-doped BaTiO3 ceramics are measured at 77500 K by electron paramagnetic resonance (EPR) for investigating the role of the centers on the well-known positive temperature coefficient of resistivity (PTCR) effect (PTCR at the Curie temperature). EPR detects... (Read more)
- 369. J. Appl. Phys. 80, 3435 (1996) , “Oxygen-Related 1-Platinum Defects in Silicon: An Electron Paramagnetic Resonance Study”, U. Juda, O. Scheerer, M. Höhne, H. Riemann, H.-J. Schilling, J. Donecker, and A. GerhardtA monoclinic 1-platinum defect recently detected was investigated more thoroughly by electron paramagnetic resonance (EPR). The defect is one of the dominating defects in platinum doped silicon. With a perfect reproducibility it is observed in samples prepared from n-type silicon as well as... (Read more)
- 370. J. Appl. Phys. 79, 9250 (1996) , “Defect-dipole alignment and tetragonal strain in ferroelectrics”, W. L. Warren, G. E. Pike, K. Vanheusden, D. Dimos, B. A. Tuttle, J. RobertsonWe show the alignment of defect dipoles along the direction of the spontaneous polarization in polycrystalline Pb(Zr,Ti)O3 and BaTiO3 ferroelectric ceramics using electron paramagnetic resonance (EPR). The alignment is demonstrated via orientation dependent paramagnetic centers... (Read more)
- 371. J. Appl. Phys. 79, 7983-7990 (1996) , “Mechanisms behind green photoluminescence in ZnO phosphor powders”, K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, B. E. GnadeWe explore the interrelationships between the green 510 nm emission, the free-carrier concentration, and the paramagnetic oxygen-vacancy density in commercial ZnO phosphors by combining photoluminescence, optical-absorption, and electron-paramagnetic-resonance spectroscopies. We find that the green... (Read more)
- 372. J. Lumin. 66&67, 462 (1996) , “Spin-Dependent Dynamical Processes of Excited States in Semiconductors”, J. –M. Spaeth.Semiconductors with donors and acceptors can be brought into excited states by illumination with above-band-gap light. In a magnetic field, the recombination of donor electrons and acceptor holes is spin-dependent and can be used to detect electron paramagnetic resonance electrically (EDEPR).... (Read more)
- 373. J. Phys.: Condens. Matter 8, L505 (1996) , “Creation of Pb Interface Defects in Thermal Si/SiO2 through Annealing”, A. Stesmans, V. V. Afanas’ev.The generation of paramagnetic interfacial defects (Si ) in standard thermal by thermal processing has been studied in the temperature range . Besides consolidating the well known dissociation (activation) process (prominent from approximately onward) of pre-existing entities, electron spin... (Read more)
- 374. J. Phys.: Condens. Matter 8, 837 (1996) , “An electron paramagnetic resonance investigation of paramagnetic defects in diamond films grown by chemical vapour deposition”, D. F. Talbot-Ponsonby, M. E. Newton, J. M. Baker, G. A. Scarsbrook, R. S. Sussmann, C. J. H. WortDefects in free-standing diamond films grown by microwave-plasma-assisted chemical vapour deposition have been studied by electron paramagnetic resonance (EPR). The EPR spectra observed for the as-grown material each consisted of two distinguishable Lorentzian lines at g = 2.0028(2), along with... (Read more)
- 375. JETP 83, 829 (1996) , “Influence of the Splitting of Dislocations on the g Factor of Holes in a One-Dimensional Dislocation Band”, V. V. Kveder, A. I. Shalynin, É. A. Shte?nman, A. N. Izotov.
- 376. Jpn. J. Appl. Phys. 35, 3937 (1996) , “Hydrogen Passivation of Donors and Hydrogen States in Heavily Doped n-Type Silicon”, N. Fukata, S. Sasaki, S. Fujimura, H. Haneda, K. Murakami.We have studied hydrogen passivation of phosphorus (P) donors and hydrogen states in heavily doped n-type silicon by electron spin resonance (ESR) of P donors and conduction electrons. A remote-treatment method of atomic hydrogen was used for the introduction of H atoms. The hydrogen... (Read more)
- 377. Mater. Sci. Eng. B 42, 213-216 (1996) , “Investigation of deep-level defects in semi-insulating GaAs and InP by analysis of photo-induced current transients”, P. Kamiński, R. Ćwirko, M. Palczewska and R. KozłowskiA new digital approach to PICTS technique was applied to study deep levels in undoped SI GaAs and Fe-doped InP. For SI Fe-doped InP, the 0.64-eV trap related to Fe2 + /Fe3 + acceptor level as well as the 0.53-eV trap attributed to a native defect, were observed. For SI undoped GaAs, three traps: T1... (Read more)
- 378. Mater. Sci. Eng. B 38, 138 (1996) , “Process development for III–V nitrides”, S. J. Pearton, C. R. Abernathy, F. Ren, R. J. Shul, S. P. Kilcoyne, M. Hagerott-Crawford, J. C. Zolper, R. G. Wilson, R. G. Schwartz and J. M. ZavadaAdvances in GaN-based electronic and photonic devices requires improved patterning methods, better Ohmic contacts and higher p-type dopong levels. In this paper, new developments in dry and wet etching. Ohmic contacts and epitaxial growth of III–V nitrides are reported. We find that high ion... (Read more)
- 379. Mater. Sci. Eng. B 36, 77 (1996) , “New Oxygen-Related EPR Spectra in Proton-Irradiated Silicon”, Kh. A. Abdullin, B. N. Mukashev, A. M. Makhov and Yu. V. GorelkinskiiAn electron-paramagnetic resonance (EPR) study of proton-irradiated silicon has revealed two new EPR spectra labeled Si-AA13 and Si-AA14. Spectrum AA13 has C3v symmetry (g = 1.9985 and g = 2.0024 ± 0.0002), AA14 C1 symmetry. These spectra correspond to positive (B+) and negative (B−)... (Read more)
- 380. Mater. Sci. Eng. B 36, 133 (1996) , “EPR of Interstitial Hydrogen in Silicon: Uniaxial Stress Experiments”, Yu. V. Gorelkinskii and N. N. NevinnyiThis paper deals with an electron paramagnetic resonance (EPR) study of the Si-AA9 EPR center, which has been previously identified as arising from a 111 bond-centered (BC) interstitial hydrogen in the neutral charge state (H0) and is a hydrogenic analog of the anomalous state of muonium (Mu*) in... (Read more)
- 381. Phys. Rev. B 54, R6803 (1996) , “Infrared Absorption in Silicon from Shallow Thermal Donors Incorporating Hydrogen and a Link to the NL10 Paramagnetic Resonance Spectrum”, R. C. Newman, J. H. Tucker, N. G. Semaltianos, E. C. Lightowlers, T. Gregorkiewicz, I. S. Zevenbergen, C. A. J. Ammerlaan.Shallow thermal donors (STDs), generated in Czochralski silicon, annealed at 470°C in a hydrogen plasma, and detected by their infrared (IR) electronic absorption, have ground states that shift slightly (?0.1 cm-1) to smaller binding energies, when deuterium is introduced instead of... (Read more)
- 382. Phys. Rev. B 54, R11129 (1996) , “Thermally Induced Interface Degradation in (111) Si/SiO2 Traced by Electron Spin Resonance”, A. Stesmans, V. V. Afanas’ev.Thermal post-oxidation interface degradation in (111) Si/SiO2 has been isolated by electron-spin resonance (ESR) as a permanent Pb (Si ? Si3) interface defect creation. This process, initiating from ?640 °C onward, reveals interface breakdown on an atomic scale as... (Read more)
- 383. Phys. Rev. B 54, 7881 (1996) , “Hydrogen-related defects in polycrystalline CVD diamond”, X. Zhou, G. D. Watkins, K. M. McNamara Rutledge, R. P. Messmer, S. ChawlaBy simulating the line shapes of a commonly observed S=1/2 electron paramagnetic resonance (EPR) center in polycrystalline chemical vapor deposited (CVD) diamond at 9.8, 14, 20, and 35 GHz, we conclude that the EPR signal, which we label H1, results from a unique defect with a single hydrogen atom... (Read more)
- 384. Phys. Rev. B 54, 7874 (1996) , “Nitrogen-related dopant and defect states in CVD diamond”, E. Rohrer, C. F. O. Graeff, R. Janssen, C. E. Nebel, M. Stutzmann, H. Güttler, R. ZachaiSubbandgap absorption of chemical-vapor-deposition diamond films, with nitrogen contents varying from 10 to 132 ppm has been explored by the constant-photoconductivity method (CPM), photothermal-deflection spectroscopy (PDS) and electron spin resonance (ESR). The spectra measured by PDS increase... (Read more)
- 385. Phys. Rev. B 54, 6988 (1996) , “Electron-paramagnetic-resonance measurements on the di-<001>-split interstitial center (R1) in diamond”, D. J. Twitchen, M. E. Newton, J. M. Baker, O. D. Tucker, T. R. Anthony, W. F. BanholzerElectron-paramagnetic-resonance (EPR) studies in electron-irradiated diamond enriched with 5% 13C have resulted in identification of the di-?001?-split interstitial center. It is the isotopic enrichment and the consequent observation of 13C hyperfine satellites that have... (Read more)
- 386. Phys. Rev. B 54, 10543 (1996) , “Fourier-Transform Photoluminescence Spectroscopy of Excitons Bound to Group-III Acceptors in Silicon: Zeeman Effect”, V. A. Karasyuk, M. L. W. Thewalt, S. An, E. C. Lightowlers, A. S. Kaminskii.Photoluminescence of excitons bound to Al, Ga, In, and Tl acceptors in Si was studied at liquid-He temperatures in magnetic fields up to 14.5 T with ?001?, ?111?, and ?110? orientations with 0.0025-meV spectral resolution. All details of the Zeeman spectra for every field orientation, with up to 30... (Read more)
- 387. Phys. Rev. B 54, 10508 (1996) , “Neutral manganese acceptor in GaP: An electron-paramagnetic-resonance study”, J. Kreissl, W. Ulrici, M. El-Metoui, A.-M. Vasson, A. Vasson, A. GavaixIn order to clarify the nature of the neutral Mn acceptor in GaP, we have carried out optical-absorption and electron-paramagnetic-resonance (EPR) experiments using both conventional and thermally detected EPR on semi-insulating GaP:Mn. In thermal equilibrium at low temperatures, all the manganese... (Read more)
- 388. Phys. Rev. B 53, 13441 (1996) , “Electronic structure of the N-V center in diamond: Theory”, A. Lenef, S. C. RandAb initio calculations have been made of possible excited electronic structure of the N-V center in diamond. Molecular-orbital basis states for a center of C3v symmetry with n=2, 4, or 6 active electrons, which account fully for spin symmetries of the wave functions, were constructed to... (Read more)
- 389. Phys. Rev. B 53, 13427 (1996) , “Electronic structure of the N-V center in diamond: Experiments”, A. Lenef, S. W. Brown, D. A. Redman, S. C. Rand, J. Shigley, E. FritschQuantum-beat spectroscopy has been used to observe excited states of the N-V center in diamond. For the 1.945-eV optical transition, direct evidence is presented for the existence of GHz-scale fine structure, together with a much larger 46-cm-1 level splitting in the E state. An... (Read more)
- 390. Phys. Rev. B 53, 12570 (1996) , “Electron Paramagnetic Resonance of a Au-Au Pair in Heat-Treated Silicon”, P. M. Williams, P. W. Mason, and G. D. WatkinsTwo previously unreported electron paramagnetic resonance centers of C2v symmetry, labeled Si-LAu1 and Si-LAu2, are observed in p-type gold-doped silicon after a heat treatment at 1250 °C. For one of them, Si-LAu2, complex resolved hyperfine structure reveals the presence of two... (Read more)
- 391. Phys. Rev. Lett. 77, 4600 (1996) , “Electronic Structure of Band-Tail Electrons in a Si:H”, T. Umeda, S. Yamasaki, J. Isoya, A. Matsuda, and K. TanakaElectronic structures of the light-induced electron spin resonance (LESR) centers in undoped a-Si:H have been investigated by means of pulsed ESR techniques. Overlapping LESR signals of g = 2.004 and 2.01 have been experimentally deconvoluted by using the difference in spin-lattice relaxation time... (Read more)Si| EPR| Silicon amorphous band-tail n-type p-type .inp files: Si/band-tail | last update: Takahide Umeda
- 392. Phys. Solid State 38, 549 (1996) , “Identification of Intrinsic Interstitial Complexes in Silicon by EPR”, G. O. Tozhibaev, Sh. M. Makhkamov, Yu. V. Gorelkinski?, N. A. Tursunov, M. A. Makhov.Although a large number of experimental papers on defect center states in silicon have been published, there is still not enough information on intrinsic interstitial defects. Of the large number of defects identified by EPR signals in irradiated silicon, only four centers (Si-G25, Si-A5, Si-B3, and Si-P6) are related to intrinsic interstitial complexes of silicon.
- 393. phys. stat. sol. (a) 157, 405 (1996) , “On the Nature of Deep Donors Created at 450 C in Boron-Doped p-Si”, V. M. Babich, N. P. Baran, M. Ya. Valakh, V. L. Kiritsa, G. Yu. Rudko.It is shown that the boron impurity in oxygen-rich p-Si is involved in the formation of electrically active complexes, namely, deep thermal donors, during thermal annealing at T = 450°C. The conclusion is based on experimental results obtained by several techniques such as Hall measurements,... (Read more)
- 394. phys. stat. sol. (a) 154, 219 (1996) , “Microstructure Evolution and Defect Incorporation in Highly Oriented and Textured CVD Diamond Films”, Y. von Kaenel, J. Stiegler, E. Blank, O. Chauvet, Ch. Hellwig, K. PlamannA series of highly oriented and textured microwave CVD diamond films, where only the deposition time was varied, was deposited on silicon wafers in order to follow the evolution of the microstructure and defect content with film thickness. SEM, XRD, Raman spectroscopy, luminescence measurements, and... (Read more)
- 395. Proc. SPIE 2780, 133-136 (1996) , “Digital analysis of photo-induced current transients in semi-insulating GaAs and InP”, Pawel Kaminski, Michal Pawlowski, Robert Cwirko, M. Palczewska, Roman KozlowskiDigital PITS technique was applied to study deep-level defects in semi-insulating GaAs and InP. The studies were completed by measurements of ESR spectra on the same wafers.... (Read more)
- 396. Prog. Surf. Sci. 51, 263-408 (1996) , “Scanning tunneling microscopy study of fullerenes”, T. Sakurai, X. -D. Wang, Q. K. Xue, Y. Hasegawa, T. Hashizume and H. ShinoharaScanning tunneling microscopy investigations of adsorption and film growth of various fullerenes on semiconductor and metal surfaces are reviewed. The fullerenes being studied are C60, C70, C84, Sc@C82 and Y@C82 and the substrates being used for adsorption are Si (111), Si (100), Ge (111), GaAs... (Read more)
- 397. Radiat. Meas. 26, 131-137 (1996) , “Effect of oxide additives on radiolytic decomposition of zirconium and thorium nitrates”, N. G. Joshi, A. N. Garg, V. Natarajan and M. D. SastryGamma ray-induced decomposition of the binary mixtures of zirconium and thorium nitrates with 2.5, 5 and 10 mol% of V2O5, PbO, ThO2, ZrO2, and MnO2 has been studied at different doses up to 260 kGy. Radiation chemical yield G(NO2−)-values are enhanced by V2O5, PbO, and ThO2 but are decreased... (Read more)
- 398. Semicond. Sci. Technol. 11, 1696-1703 (1996) , “Metastable oxygen - silicon interstitial complex in crystalline silicon”, Kh. A. Abdullin, B. N. Mukashev, Yu. V. Gorelkinskii.A new metastable complex in monocrystalline silicon irradiated at with protons has been studied. Electron paramagnetic resonance (EPR) Si-AA13 ( symmetry) and Si-AA14 ( symmetry) spectra as well as the known Si-A18 spectrum originate from different molecular configurations of the complex. A... (Read more)
- 399. Semiconductors 30, 552 (1996) , “Anomalous excitation in the ESR spectrum of the Fe3+ ion in GaAs”, A. A. Ezhevski?, S. J. H. M. van Gisbergen, C. A. J. Ammerlaan
- 400. Semiconductors 30, 1055 (1996) , “Detection of Paramagnetic Recombination Centers in Irradiated Silicon p-n Jundtions”, M. M. Afanas’ev, M. P. Vlasenko, V. N. Lomasov, A. V. Militsyn.
- 401. Solid State Commun. 97, 255 (1996) , “Comparative Analysis of the H2 Passivation of Interface Defects at the (100)Si/SiO2 Interface Using Electron Spin Resonance”, A. Stesmans.The passivation with molecular hydrogen in the range 213–234°C of the interfacial Pb0 and Pb1 defects in (100)Si/SiO2, thermally grown at low temperature (<750°C), has been analyzed by K-band electron spin resonance. The passivation kinetics are found to be well described by the... (Read more)
- 402. Surf. Sci. 361-362, 55-58 (1996) , “Electron spin resonance in AlGaAs/GaAs in the regime of fractional filling”, R. Meisels, I. Kulac, G. Sundaram, F. Kuchar, B. D. McCombe, G. Weimann , W. SchlappWe have studied the electron spin resonance (ESR) at millimeterwave frequencies in high mobility AlGaAs/GaAs samples for the first time at filling factors v < 1 outside the v = 1 resistance minimum. The magnetic field dependence of the ESR measured at T = 1.6 K agrees with the calculations made... (Read more)
- 403. Surf. Sci. 352-354, 793 (1996) , “Pb1 defect study and chemical characterization of the Si(001)---SiO2 interface in oxidized porous silicon”, J. L. Cantin, M. Schoisswohl, H. J. von Bardeleben, F. Rochet, G. Dufour.In comparison with oxidized bulk crystals, we show that the morphology of oxidized porous silicon can offer a unique opportunity of measuring suboxide distribution by conventional XPS and to characterize thoroughly interfacial defects by EPR. (Read more)
- 404. Thin Solid Films 281-282, 275 (1996) , “Formation of paramagnetic defects in CVD diamond films (ESR study)”, Y. Show, Y. Nakamura, T. Izumi, M. Deguchi, M. Kitabatake, T. Hirao, Y. Mori, A. Hatta, T. Ito and A. HirakiParamagnetic defects in CVD (Chemical Vapor Deposition) diamond films were studied using the Electron Spin Resonance (ESR) method. Furthermore, the correlation between defects and electrical resistance of conductive layers on CVD the diamond surface were investigated using ESR and van der Pauw... (Read more)
- 405. Thin Solid Films 274, 50 (1996) , “Structural characterization of CVD diamond films using the ESR method”, Yoshiyuki Show, Mitsuo Iwase and Tomio IzumiThe early deposition stages of diamond films have been studied in detail as a function of growth time, using electron spin resonance methods. The defect center in the non-diamond phase carbon region (g = 2.003, ΔHpp = 8–14 Oe was observed from a sample deposited for 10 min. The defect... (Read more)
- 406. Appl. Phys. Lett. 67, 1280 (1995) , “Impact of Pb doping on the optical and electronic properties of ZnO powders”, K. Vanheusden, W. L. Warren, J. A. Voigt, C. H. Seager, and D. R. TallantElectron paramagnetic resonance (EPR), optical absorption, and photoluminescence (PL) spectroscopy have been combined to characterize Pb-doped ZnO ceramic powders. We observe a decrease in the 2.26 eV emission peak and a concomitant smearing of the band edges, narrowing the effective gap of the... (Read more)
- 407. Diamond Relat. Mater. 4, 877 (1995) , “Properties of diffused diamond films with n-type conductivity”, Galina Popovici, M. A. Prelas, T. Sung, S. Khasawinah, A. A. Melnikov, V. S. Varichenko, A. M. Zaitsev, A. V. Denisenko and W. R. FahrnerHigh quality, freestanding "white" CVD diamond films, 230 μm thick, polished on both sides and with resistivity 1014Ω cm were used for diffusion of impurities to obtain n-type conductivity. Diffusion of lithium, oxygen and chlorine was performed under a bias. Auger analysis was... (Read more)
- 408. Diamond Relat. Mater. 4, 508 (1995) , “Effective correlation energies for defects in a-C:H from a comparison of photelectron yield and electron spin resonance experiments”, J. Ristein, J. Schäfer and L. LeyAmorphous hydrogenated carbon films (a-C:H) were deposited by r.f. plasma CVD from methane, varying the self bias potential of the substrate electrode by means of the r.f. power coupled into the discharge. Films were characterized by IR and optical spectroscopy, confirming a transition from... (Read more)
- 409. Diamond Relat. Mater. 4, 177 (1995) , “Photoinduced absorption lines related to nickel impurity in annealed synthetic diamonds”, A. P. Yelisseyev and V. A. NadolinnyThe absorption lines at 539.9, 546.6 and 552.9 nm induced by visible or UV light illumination in synthetic diamonds annealed at T 2000 K and 5.5 GPa have been studied. The lines are associated with two different nitrogen-nickel defects, while the photoinduction effect is a result of internal... (Read more)
- 410. J. Appl. Phys. 78, 7059 (1995) , “Characterization of heavily B-doped polycrystalline diamond films using Raman spectroscopy and electron spin resonance”, P. Gonon, E. Gheeraert, A. Deneuville, F. Fontaine, L. Abello, G. LucazeauHeavily B-doped polycrystalline diamond films ([B]~" align="bottom">1019 cm3) are studied by Raman spectroscopy and electron spin resonance. The formation of an impurity band is accompanied by a Fano-type interference for the one-phonon scattering. Bands at 1200 and 500... (Read more)
- 411. J. Appl. Phys. 78, 3874 (1995) , “The erbium-impurity interaction and its effects on the 1.54 µm luminescence of Er3 + in crystalline silicon”, F. Priolo, G. Franzò, S. Coffa, A. Polman, S. Libertino, R. Barklie, D. Carey.We have studied the effect of erbium-impurity interactions on the 1.54 µm luminescence of Er3 + in crystalline Si. Float-zone and Czochralski-grown (100) oriented Si wafers were implanted with Er at a total dose of ~1×1015/cm2. Some samples were also... (Read more)
- 412. J. Appl. Phys. 78, 3077 (1995) , “Generation and Dissociation of Complexes of Iron and Phosphorus Atoms in Silicon”, Hideki Takahashi, Masashi Suezawa, and Koji SuminoTo examine the possibility of generating complexes of iron and phosphorus atoms in silicon, neutral interstitial iron in phosphorus doped silicon crystals with various concentrations were measured with the electron spin resonance (ESR) method after cooling from high temperature at various cooling... (Read more)
- 413. J. Appl. Phys. 78, 2411 (1995) , “Native defects in low-temperature GaAs and the effect of hydrogenation”, R. E. Pritchard, S. A. McQuaid, L. Hart, R. C. Newman, J. Mäkinen, H. J. von Bardeleben, M. MissousA range of experimental techniques has been used to measure point defect concentrations in GaAs layers grown at low temperatures (250 °C) by molecular-beam epitaxy (LT-GaAs). The effects of doping on these concentrations has been investigated by studying samples containing shallow acceptors (Be)... (Read more)
- 414. J. Appl. Phys. 77, 1546 (1995) , “Electrical Detection of Electron Paramagnetic Resonance: New Possibilities for the Study of Point Defects”, B. Stich, S. Greulich-Weber, J. –M. Spaeth.An investigation of the possibilities to measure electron paramagnetic resonance (EPR) with electrical detection (EDEPR) by measuring the microwave or radio frequency-induced change of the photoconductivity of various bulk Si samples containing shallow and deep level defects is presented. It was... (Read more)
- 415. Jpn. J. Appl. Phys. 34, 3418 (1995) , “Hydrogen-like Ultrashallow Thermal Donors in Silicon Crystals”, A. Hara.I investigated the electrical properties of annealed carbon- and nitrogen-rich Czochralski-grown silicon crystals using optical absorption and electron spin resonance, and I discovered the formation of a new kind of hydrogen-like donors,... (Read more)
- 416. Phys. Rev. B 52, 5007 (1995) , “Aggregate Defects of Gold and Platinum with Lithium in Silicon: II. Electronic-Structure Calculations”, H. Weihrich, H. Overhof, P. Alteheld, S. Greulich-Weber, J. –M. Spaeth.We present ab initio total energy calculations for aggregate defects of the noble metals Pt or Au with Li. The calculations are performed in the local spin density approximation to the density-functional theory using the linear-muffin-tin-orbital method in the atomic spheres approximation. We... (Read more)
- 417. Phys. Rev. B 52, 4998 (1995) , “Aggregate Defects of Gold and Platinum with Lithium in Silicon: I. Magnetic Resonance Investigations”, P. Alteheld, S. Greulich-Weber, J. –M. Spaeth, H. Weihrich, H. Overhof, M. Höhne.Trigonal and orthorhombic Au (Pt) defects in Si additionally doped with Li and P, previously investigated with electron paramagnetic resonance (EPR), are shown to be aggregate defects involving substitutional Au (Pt) and interstitial Li. The small Li hyperfine interactions, not resolved in EPR,... (Read more)
- 418. Phys. Rev. B 52, 16575 (1995) , “Vacancy Model for Substitutional Ni-, Pd-, Pt-, and Au0 in Silicon”, G. D. Watkins, P. M. Williams.The vacancy model for the electronic structure in silicon of substitutional transition elements near the end of the 3d, 4d, and 5d series is described and a simplified theoretical treatment for their paramagnetic properties is presented. It is concluded that the complete set of such impurities for... (Read more)
- 419. Phys. Rev. B 52, 12657 (1995) , “Magnetic-resonance measurements on the 5A2 excited state of the neutral vacancy in diamond”, J. A. van Wyk, O. D. Tucker, M. E. Newton, J. M. Baker, G. S. Woods, P. SpearThe ground state of the neutral vacancy in diamond is diamagnetic and therefore has not been studied by electron paramagnetic resonance (EPR). We report the observation of EPR from the 5A2 excited state of the neutral vacancy by EPR when illuminating an electron-irradiated... (Read more)
- 420. Phys. Rev. B 52, 1144 (1995) , “Electron Paramagnetic Resonance Versus Spin-Dependent Recombination: Excited Triplet States of Structural Defects in Irradiated Silicon”, L. S. Vlasenko, Yu. V. Martynov, T. Gregorkiewicz, C. A. J. Ammerlaan.Upon illumination some structural defects in irradiated silicon can be excited into the metastable triplet S=1 states. These triplet states can be involved in the excess-carriers recombination process. This paper provides a theoretical treatment of spin-dependent recombination (SDR) via an excited... (Read more)
- 421. Phys. Rev. B 51, 9612 (1995) , “Microscopic Structure and Multiple Charge States of a PtH2 Complex in Si”, S. J. Uftring, M. Stavola, P. M. Williams, G. D. Watkins.The structure and electrical properties of a PtH2 complex in Si have been studied by vibrational spectroscopy and electron paramagnetic resonance (EPR). The PtH2 complex has been found to introduce two levels in the Si band gap. One level was identified previously and lies near... (Read more)
- 422. Phys. Rev. B 51, 16746 (1995) , “Electron-Paramagnetic-Resonance Identification of Hydrogen-Passivated Sulfur Centers in Silicon”, I. S. Zevenbergen, T. Gregorkiewicz, and C. A. J. AmmerlaanTwo centers are detected in hydrogenated sulfur-doped silicon by means of electron paramagnetic resonance. Both defects, labeled for further reference Si-NL54 and Si-NL55, are very similar and have trigonal symmetry; to better resolve the spectra, the field-scanned electron nuclear double resonance... (Read more)
- 423. Phys. Rev. B 51, 16741 (1995) , “Optical detection of magnetic resonance of nitrogen and nickel in high-pressure synthetic diamond”, M. H. Nazare, P. W. Mason, G. D. Watkins, H. KandaDiamonds grown by the temperature-gradient method using a nickel catalyst exhibit a luminescence spectrum that is dominated by a broad band with sharp lines around 2.56 eV. We report optical detection of magnetic resonance of substitutional N0 and substitutional Ni- in this... (Read more)
- 424. Phys. Rev. B 51, 16721 (1995) , “Electronic states associated with dislocations in p-type silicon studied by means of electric-dipole spin resonance and Deep-Level Transient Spectroscopy”, V. Kveder, T. Sekiguchi, K. Sumino.Dislocation loops consisting of long and straight segments of 60° and screw parts were introduced in p-type Si by deformation under a high stress at a relatively low temperature. Electronic states associated with such dislocations were investigated by means of electric-dipole spin resonance, with... (Read more)
- 425. Phys. Rev. B 51, 11117 (1995) , “Optical cross section for the EL2?EL2* metastable transformation”, N. Radić and B. Å antićA simple and accurate method for the determination of the σ* optical cross section governing the EL2→EL2* transformation kinetics in GaAs is proposed. Previously reported σ* values are critically examined and corrected properly. The obtained absolute values of... (Read more)
- 426. Phys. Rev. Lett. 74, 2030 (1995) , “Role of Hydrogen in the Formation and Structure of the Si-NL10 Thermal Donor”, Yu. V. Martynov, T. Gregorkiewecz, C. A. J. Ammerlaan.Microscopic evidence of a prominent role of hydrogen in the formation and structure of the Si- NL10 thermal donor is presented. Hyperfine interactions with the 1H nucleus have been detected and analyzed by means of electron-nuclear double resonance (ENDOR) and field-scanned ENDOR. Based... (Read more)
- 427. phys. stat. sol. (b) 189, K1 (1995) , “Charge States of Interstitial Defects in Implanted Silicon and Their Annealing Temperatures”, M. Jadan, N. I. Berezhnov, A. R. Chelyadinskii.In radiation physics of silicon a "vacancy" period has persisted for quite a long time. From a number of investigations it has been inferred that a divacancy is the main defect, stable at room temperature in silicon irradiated by fast neutrons and irons[1 to 3]. The concentrations of stable... (Read more)
- 428. Physica B 215, 404 (1995) , “Microwave Conductivity and Spin Resonance of Si-nK Centers at Dislocation Dipoles in Silicon”, A. A. Konchits, B. D. Shanina.Non-resonance microwave absorption (NRMA) due to microwave conductivity (MC) of Czochralski-grown silicon crystal has been studied. The temperature dependence of the MC was measured in the temperature range from 1.7 to 40 K in darkness as well as under the interband light. Exponential growth of the... (Read more)
- 429. Physica B 211, 23-29 (1995) , “Solid state experiments in megagauss fields”, N. Miura, H. Nojiri, Y. Shimamoto and Y. ImanakaThis paper presents a brief review on recent experiments of solid state physics in very high magnetic fields up to 550 T produced by electromagnetic flux compression and the single-turn coil technique, focusing on magneto-optical spectroscopy in semiconductors, low-dimensional magnetic systems and... (Read more)
- 430. Physica B 205, 87-90 (1995) , “Magnetism of interacting donors in zinc-blende GaN”, M. FanciulliThe temperature dependence of the paramagnetic susceptibility of donor centers in zinc-blende GaN thin films observed by monitoring the integral intensity of the electron paramagnetic resonance (EPR) absorption has been analyzed using the donor-molecule model. The theoretical predictions are... (Read more)
- 431. Semicond. Sci. Technol. 10, 977 (1995) , “EPR and ENDOR Observation of Orthorhombic Au-Li and Pt-Li Pairs in Silicon: on the Problem of the Observation of Isolated AuSi0 with Magnetic Resonance”, S. Greulich-Weber, P. Alteheld, J. Reinke, H. Weihrich, H. Overhof, J. M. Spaeth.We report the observation of orthorhombic Au-Li and Pt-Li pairs in Si using EPR and ENDOR techniques and also MCDA spectroscopy. The EPR spectra alone could be mistaken as being due to orthorhombic isolated point defects and ENDOR is required to detect the Li partner of the pair. Comparison of the... (Read more)
- 432. Solid State Commun. 96, 397 (1995) , “Oxidation temperature dependent restructuring of the Pb defect at the (1 1 1) Si/SiO2 interface”, A. Stesmans.Previous electron spin resonance work has unveiled distinct variations in g|| of the Pb interface defects (oSi=Si3) in (1 1 1) Si/SiO2 structures upon upwards crossing of the oxidation temperature range Tox = 750–850°C. These are a drop in g|| of δg|| 0.00008 and a collapse... (Read more)
- 433. Solid State Commun. 93, 383 (1995) , “Gold in Silicon and Other Analogous Donors and Acceptors”, Mats Kleverman, AnnaLena Thilderkvist, Günter Grossmann, Hermann G. Grimmeiss and George D. WatkinsRecent results on the substitutional Au and interstitial Fe deep-level impurities in silicon are discussed in some detail. Their excitation spectra are due to transitions from a deep ground state to shallow states. The good understanding of the electronic structure of the shallow states as well as... (Read more)
- 434. Appl. Phys. Lett. 65, 3320 (1994) , “Power saturation and the effect of argon on the electron spin resonance of diamond deposited from a microwave plasma”, P. B. Lukins and J. KhachanElectron spin resonance (ESR) of microwave plasma chemical vapor deposition diamond shows peaks associated with (i) a P1 substitutional nitrogen defect center, (ii) spin-spin interactions between the paramagnetic sites and neighboring protons, and (iii) a possible contribution from graphitic... (Read more)
- 435. Appl. Phys. Lett. 65, 3260 (1994) , “Paramagnetic centers at and near the Si/SiOx interface in porous silicon”, B. Pivac, B. Rakvin, L. Pavesi.Formation of paramagnetic centers in aged porous silicon samples is studied by electron paramagnetic resonance. Samples oxidized by aging in air at room temperature exhibit the Pb centers as dominant defects. These are formed at the interfaces between the Si nanocrystallites... (Read more)
- 436. Appl. Phys. Lett. 65, 2951 (1994) , “Nitrogen in the isotopically enriched 12C diamond”, S. Zhang, M. E. Zvanut, Y. K. Vohra, S. S. VagaraliAn electron paramagnetic resonance (EPR) characterization study of isotopically enriched 12C diamond grown by General Electric has been carried out. While other commonly used techniques detect no nitrogen in this diamond, the clear EPR spectrum consistently measured a nitrogen... (Read more)
- 437. Appl. Phys. Lett. 65, 2287 (1994) , “Identification of phosphorus in diamond thin films using electron paramagnetic-resonance spectroscopy”, M. E. Zvanut, W. E. Carlos, J. A. Freitas, Jr., K. D. Jamison, R. P. HellmerAn electron paramagnetic-resonance study of diamond films doped by implantation of phosphorus during film deposition is reported. Samples with nominal phosphorus concentration between 1016 and 1017 cm 3 exhibit two isotropic lines of equal intensity separated... (Read more)
- 438. Appl. Phys. Lett. 64, 1091 (1994) , “Electron paramagnetic resonance forbidden transitions from hydrogen in polycrystalline diamond films”, S. H. Holder, L. G. Rowan, J. J. KrebsInvestigation of polycrystalline diamond films by electron paramagnetic resonance at 9.5 and 35 GHZ has revealed the presence of forbidden transitions resulting from a simultaneous microwave induced flipping of unpaired electron spins and environmental nuclear spins. The spacing of the resonance... (Read more)
- 439. Diamond Relat. Mater. 4, 53 (1994) , “Slow emission of the 2.56 eV centre in synthetic diamond”, E. Pereira, L. Santos, L. Pereira, D. M. Hofmann, P. Christmann, W. Stadler and B. K. MeyerThe 2.56 eV luminescence band in synthetic diamond is studied in detail by time resolved photoluminescence and spin resonance measurements. The temperature dependence of the vibronic band shape indicates that between 2 and 20 K there is a noticeable change in relative intensities of the two dominant... (Read more)
- 440. J. Appl. Phys. 75, 7559 (1994) , “Observation of Cr3 + electron paramagnetic resonance center in GaAs co-doped with Cr and In”, Young Ju Park, Tae Ho Yeom, Suk-Ki Min, Il-Woo Park, Sung Ho ChohWe have observed a well-defined Cr3 + (3d3) electron paramagnetic resonance signal at 4 K in vertical gradient freeze semi-insulating GaAs single crystal through a co-doping with Cr and In. On the basis of analyzing the rotation pattern of the Cr3 + center,... (Read more)
- 441. J. Appl. Phys. 75, 2929 (1994) , “Model for NL10 Thermal Donors Formed in Annealed Oxygen-Rich Silicon Crystals”, Akito Hara, Masaki Aoki, Masaaki Koizuka, and Tetsuo FukudaElectron spin resonance (ESR) studies have shown that NL10 thermal donors are formed in oxygen-rich silicon (Si) crystals after annealing. In initial NL10 formation stage, it has C2v symmetry with the principle g values g[100]=1.99982, g[01]=1.99799,... (Read more)
- 442. J. Non-Cryst. Solids 179, 39-50 (1994) , “Paramagnetic resonance of E′-type centers in Si-implanted amorphous SiO2. Si29 hyperfine structure and characteristics of Zeeman resonances*1”, H. Hosono, H. Kawazoe, K. Oyoshi, S. TanakaElectron paramagnetic resonance spectra were measured on SiO2 glasses implanted with Si ions to a fluence of 6 × 1016 cm−2 at an acceleration voltage of 160 kV. Three sets of doublets with different separation were observed in Si29-implanted substrates and were ascribed to primary... (Read more)
- 443. J. Non-Cryst. Solids 179, 1-9 (1994) , “The many varieties of E′ centers: a review”, Robert A. WeeksThree varieties of E′ centers with a spin state, S = 1/2, and with a G-tensor, Gx Gy 2.0003, Gz 2.0018, were identified in the early reports on paramagnetic states in irradiated α-quartz. The atomic structure of two of these had an hydrogen ion (proton) in nearby sites and hence... (Read more)
- 444. J. Phys. Chem. Solids 55, 1353-1356 (1994) , “EPR of [FA]0 centres in zinc chalcogenides”, K. Tarkpea, A. Ots , V. Nikitenko[FA]0 centres in ZnO and ZnS single crystals have been detected by electron paramagnetic resonance. The [FA]0 centre consists of an anion vacancy with a localized electron and a monovalent substitutional impurity replacing an adjacent Zn2+ ion. This impurity is probably a Li+ ion in the case of ZnO... (Read more)
- 445. J. Phys.: Condens. Matter 6, 801 (1994) , “EPR of radiation damage centres W11, W12, W13 and W14 in type Ib diamond”, J. A. van WykW11, W12, W13 and W14 are four paramagnetic defects with S=3/2 observed in electron or neutron irradiated type Ib diamonds. Although spin Hamiltonian parameters have been determined that describe the ESR results very well, it will be shown that the normal spin Hamiltonian with... (Read more)
- 446. J. Phys.: Condens. Matter 6, 6721 (1994) , “A perturbed vacancy model for the R1 EPR centre in diamond”, J. E. Lowther, A. MainwoodRadiation damage produces many defects in diamond that are associated with lattice vacancies and interstitial atoms. EPR has proved to be a valuable tool in the characterization of such defects although often detailed models of the defect structure have not been attempted. It is shown that the R1... (Read more)
- 447. J. Phys.: Condens. Matter 6, 551 (1994) , “13C, 14N and 15N ENDOR measurements on the single substitutional nitrogen centre (P1) in diamond”, A. Cox, M. E. Newton, J. M. BakerNew ENDOR measurements on the single substitutional nitrogen centre in diamond are reported. The CW-ENDOR mechanism utilizes cross relaxation, and measurements have been made on both 14N and 15N, as well as the first detailed 13C ENDOR study on the isotope at the... (Read more)
- 448. Jpn. J. Appl. Phys. 33, 1872 (1994) , “Temperature Dependence of ESR Lines Related to Phosphorus in Silicon”, M. Morooka, M. Tokita, T. Kato, I. Tsurumi.Temperature dependence of ESR in a silicon crystal containing 1.3×1017 phosphorus atoms/cm3 has been investigated at 4-40 K. The ESR signals depend strongly on the specimen temperature. Typical hyperfine structures of... (Read more)
- 449. Mater. Lett. 19, 53-56 (1994) , “The effect of NiO doping on the stoichiometry of ZnO”, P. Lot'k, J. Lounek, L. Koudelka, L. Bene and E. ernokováThe additions of NiO (0–2.0 mol%) to ZnO result in a decrease of the parameter c of its crystal lattice and its high-frequency electrical conductivity and in an elimination of the ESR band with g = 1.96. The observed changes were ascribed to the formation of Zn1−xNixO solid solution,... (Read more)
- 450. Phys. Rev. B 50, 7365 (1994) , “S-Cu-related metastable complex defect in Si by optical detection of magnetic resonance”, W. M. Chen, M. Singh, B. Monemar, A. Henry, E. Janzén, A. M. Frens, M. T. Bennebroek, J. Schmidt.We present experimental results obtained on a S-Cu-related metastable complex defect in Si, by optical detection of magnetic resonance (ODMR) at the X band and the K band. Two photoluminescence emissions arising from the bound-exciton (BE) recombination at the defect in two different configurations... (Read more)
- 451. Phys. Rev. B 50, 5189 (1994) , “Theoretical investigation of the dynamic process of the illumination of GaAs”, Ren Guang-bao, Wang Zhan-guo, Xu Bo, Zhou BingThe dynamic process of light illumination of GaAs is studied numerically in this paper to understand the photoquenching characteristics of the material. This peculiar behavior of GaAs is usually ascribed to the existence of EL2 states and their photodriven metastable states. To understand the... (Read more)
- 452. Phys. Rev. B 50, 2645 (1994) , “Magnetic-resonance studies of tellurium-doped AlxGa1–xAs”, M. Surma, Z. ?ytkiewicz, K. Fronc, M. Godlewski, P. Stallinga, B. MonemarAn ESR study performed on a thick AlxGa1-xAs epilayer with removed GaAs substrate is presented. The measurements were performed on LPEE-grown AlxGa1-xAs (x=0.41) heavily doped with Te. The detailed photo-ESR investigations of the light-induced conversion... (Read more)
- 453. Phys. Rev. B 50, 2645 (1994) , “Magnetic-rasonance studies of tellurium-doped AlxGa1-xAs”, M. Surma, Z. ?ytkiewicz, K. Fronc, M. Godlewski, P. Stallinga, B. MonemarAn ESR study performed on a thick AlxGa1-xAs epilayer with removed GaAs substrate is presented. The measurements were performed on LPEE-grown AlxGa1-xAs (x=0.41) heavily doped with Te. The detailed photo-ESR investigations of the light-induced conversion... (Read more)
- 454. Phys. Rev. B 50, 17618 (1994) , “Acceptor level of substitutional Ni in diamond”, D. M. Hofmann, M. Ludwig, P. Christmann, D. Volm, B. K. Meyer, L. Pereira, L. Santos, E. PereiraSubstitutional Ni- in synthetic diamonds has been investigated by electron-paramagnetic resonance (EPR) and photo-EPR. The photo-EPR investigation shows that the Ni- EPR signal can be diminished by optical illumination, and the threshold energy of 2.47±0.02 eV suggests that the... (Read more)
- 455. Phys. Rev. B 50, 15586 (1994) , “EPR and 14N electron-nuclear double-resonance measurements on the ionized nearest-neighbor dinitrogen center in diamond”, O. D. Tucker, M. E. Newton, J. M. BakerThe nearest-neighbor substitutional nitrogen center [N-N]0 (A center), is one of the most common defects in natural diamond. [N-N]0 is diamagnetic and therefore cannot be studied by electron paramagnetic resonance (EPR). However, the [N-N]+ center is paramagnetic,... (Read more)
- 456. Phys. Rev. B 50, 15449 (1994) , “EPR and ENDOR Study of the Pb Center in Porous Silicon”, V. Ya. Bratus’, S. S. Ishchenko, S. M. Okulov, I. P. Vorona, H. J. von Bardeleben, M. Schoisswohl.The Pb center at the (111) Si-SiO2 interface has been studied with electron-nuclear-double-resonance (ENDOR) spectroscopy taking advantage of the high specific interface area of oxidized porous Si samples. The ENDOR spectrum consists only of two structureless lines at the... (Read more)
- 457. Phys. Rev. B 50, 1511 (1994) , “Electric-Dipole Spin-Resonance Study on Extended Defects in Czochralski-Grown Silicon Developed by Thermal Treatment”, T. R. Mchedlidze, V. V. Kveder, J. Jablonski, and K. SuminoA series of electric-dipole spin-resonance (EDSR) lines, termed Si-SC1 lines, are found to develop in Czochralski-grown Si crystals due to annealing at 650 °C. Some of these lines are very close to Si-2K and Si-3K reported in a previous work. The experimental data are self-consistently explained by... (Read more)
- 458. Phys. Rev. B 49, 7964 (1994) , “Electron Paramagnetic Resonance of Iron- and Aluminum-Related Defects in Silicon”, K. Irmscher, T. Kind, and W. GehlhoffSilicon codoped with aluminum and iron is investigated by electron paramagnetic resonance. Three spectra of trigonal, two of orthorhombic and two of monoclinic symmetry are detected and interpreted as being associated with iron- and aluminum-related defects. Most of the spectra are known but the... (Read more)
- 459. Phys. Rev. B 49, 16999 (1994) , “Distant Iron-Shallow-Donor Pairs in Silicon Detected by Electron Paramagnetic Resonance”, M. Höhne, U. Juda, H. Riemann, J. –M. Spaeth, S. Greulich-Weber.The electron-paramagnetic-resonance transitions of isolated neutral interstitial iron (Fei0) in n-type silicon show a satellite structure, which is clearly detectable for donor concentrations (P or As, respectively) above 1015 cm-3. The satellite structure... (Read more)
- 460. Phys. Rev. B 49, 15392 (1994) , “g tensor for substitutional nitrogen in diamond”, S. Zhang, S. C. Ke, M. E. Zvanut, H. T. Tohver, Y. K. VohraWe report a measurement of an axially symmetric g tensor for the substitutional nitrogen center in type-IIa synthetic isopure 12C diamond. Because the nitrogen concentration of the diamond studied is exceptionally low the electron-paramagnetic-resonance linewidth is sufficiently narrow to... (Read more)
- 461. Phys. Rev. B 49, 13423 (1994) , “EPR Spectroscopy of Platinum-Hydrogen Complexes in Silicon”, M. Höhne, U. Juda, Yu. V. Martynov, T. Gregorkiewicz, C. A. J. Ammerlaan, L. S. Vlasenko.Two similar defects in silicon, resulting from doping with platinum in an atmosphere containing water vapor, were studied by means of electron paramagnetic resonance. Both spectra have effective electron spin S=1/2, and exhibit platinum- and hydrogen-related hyperfine structure and remarkable... (Read more)
- 462. Phys. Rev. B 49, 11010 (1994) , “Strongly perturbed negative-vacancy-related centers in diamond”, J. E. Lowther and J. A. van WykSeveral related defect centers have been observed in synthetic and type-Ib diamond following electron or neutron irradiation. Such centers, termed W centers, have similar characteristic features in that all have a spin of S=3/2 and exhibit an extremely large zero-field splitting. Spin-Hamiltonian... (Read more)
- 463. Phys. Rev. B 49, 10999 (1994) , “Ligand ENDOR on substitutional manganese in GaAs”, S. J. C. H. M. van Gisbergen, A. A. Ezhevskii, N. T. Son, T. Gregorkiewicz, and C. A. J. AmmerlaanIn this paper Ga ligand electron-nuclear double resonance measurements are reported on the substitutional Mn2+ center in GaAs. On the basis of these experiments it is concluded that the Mn2+ center is substitutional on a Ga site. From the electron paramagnetic resonance... (Read more)
- 464. Phys. Rev. B 49, 10307 (1994) , “Trigonal Manganese Cluster in Silicon: An Electron-Paramagnetic-Resonance Study”, J. Kreissl, W. Gehlhoff, H. Vollmer.Besides the known tetrahedral Mn40 cluster, a second Mn cluster is observed by electron paramagnetic resonance in high-resistivity silicon doped with manganese. The spectrum shows trigonal symmetry. The analysis of the fine structure and the hyperfine structure suggests that... (Read more)
- 465. Phys. Rev. Lett. 73, 1457 (1994) , “Stallinga, Gregorkiewicz, and Ammerlaan Reply”, P. Stallinga, T. Gregorkiewicz, and C. A. J. AmmerlaanA drift instability due to electrons trapped in a series of shallow magnetic troughs has been observed and compared to theoretical estimates. The instability, identified as Kadomtsev's trapped-electron mode, is maximum at a density lower than estimated from the theory. (Read more)
- 466. Phys. Rev. Lett. 73, 1456 (1994) , “Comment on "Electron Paramagnetic Resonance of Molecular Hydrogen in Silicon"”, K. L. Brower, S. M. Myers, A. H. Edwards, N. M. Johnson, C. G. Van de Walle, E. H. Poindexter.Stallinga, Gregorkiewicz, Ammerlaan, and Gorelkinskii report the discovery of anew paramagnetic defect (NL52) in hydrogen-implanted and annealed silicon which they identify as s negatively charged <111> molecular hydrogen interstitial in silicon [1]. We discuss first the inconsistencies in this... (Read more)
- 467. Phys. Rev. Lett. 72, 2745-2748 (1994) , “Atomic Hydrogen Reactions with Pb Centers at the (100) Si/SiO2 Interface”, J. H. Stathis, E. CartierWe have investigated the reaction of atomic hydrogen with defects at the (100) Si/SiO2 interface. Similar to previous results on the (111) interface, we find that the two paramagnetic defects at the (100) interface, Pb0 and Pb1, are either passivated or produced by... (Read more)
- 468. Semicond. Sci. Technol. 9, 1623 (1994) , “Thermal Donors in Silicon: an Investigation of Their Structure with Electron Nuclear Double Resonance”, N. Meilwes, J. –M. Spaeth, W. Götz, G. Pensl.Singly ionized thermal double donors (TDD+), which have the so-called NL8 EPR spectrum, have been investigated with electron nuclear double resonance (ENDOR) in silicon doped with various acceptors (Al,B,In,Ga). No differences were detected in the ENDOR spectra and no signals due to any... (Read more)
- 469. Semicond. Sci. Technol. 9, 1346 (1994) , “On the Nature and Structures of Different Heat Treatment Centres in n- and p-Type Silicon”, N. Meilwes, J. –M. Spaeth, V. V. Emtsev, G. A. Oganesyan.Thermally induced defects in oxygen-rich silicon are the thermal donors (TDDS) and the so-called NL10 defects. These defects are formed by annealing at temperatures around 450 degrees C. Whereas the TDDS have a unique nature, some NL10 defects probably have different structures in differently doped... (Read more)
- 470. Solid State Commun. 90, 401 (1994) , “Electron Paramagnetic Resonance Study of the NL51 Spectrum in Hydrogen-Implanted Silicon”, P. Stallinga, T. Gregorkiewicz, C. A. J. Ammerlaan, Yu. V. Gorelkinskii.High-resistivity silicon samples have been implanted with hydrogen and deuterium (dose 5 × 1015 cm−2). After a short heat treatment at low temperatures (20 min at 380–540°C) several electron paramagnetic resonance (EPR) spectra could be detected upon illumination. The most... (Read more)
- 471. Appl. Phys. Lett. 63, 920-922 (1993) , “Nature of Pb-like dangling-orbital centers in luminescent porous silicon”, F. C. Rong, J. F. Harvey, E. H. Poindexter, G. J. GerardiThe Pb-like dangling-orbit centers in luminescent porous silicon (LPSi) have been enhanced to very high concentration (1015 cm2) by gentle oxidation. High signal-to-noise ratio and very sharp lines enable the g-value maps, and... (Read more)
- 472. Appl. Phys. Lett. 63, 1510-1512 (1993) , “Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen”, E. Cartier, J. H. Stathis, and D. A. BuchananAtomic hydrogen is found to simultaneously passivate and depassivate silicon dangling bonds at the Si(111)/SiO2 interface at room temperature via the reactions Pb+H0" align="bottom">PbH and... (Read more)
- 473. Appl. Phys. Lett. 62, 273 (1993) , “Shallow Donor in Separation by Implantation of Oxygen Structures Revealed by Electric-Field Modulated Electron Spin Resonance”, K. Vanheusden and A. StesmansElectric-field modulated K-band electron spin resonance measurements on Si/SiO2/Si structures, formed by implantation of oxygen (SIMOX), were carried out at 4.330 K. Large area metal-oxide-silicon capacitors were fabricated on these structures and optimized for cavity... (Read more)
- 474. Colloids and Surf. A 72, 161-164 (1993) , “Study of a paramagnetic center on an SiO-treated GaAs surface”, G. J. Gerardi, F. C. Rong, E. H. Poindexter, M. Harmatz, H. Shen , W. L. WarrenWe have observed enhanced photoluminescence and an isotropic, singlet electron paramagnetic resonance (EPR) signal from samples of SI c-GaAs as a result of a thermal annealing treatment with SiO under vacuum. The treated samples showed a tenfold increase in photoluminescence. The EPR signal was... (Read more)
- 475. J. Appl. Phys. 74, 5901-5903 (1993) , “The nature of donor conduction in n-GaN”, M. Asif Khan, D. T. Olson, J. N. Kuznia, W. E. Carlos, J. A. Freitas, JrSingle crystal GaN thin films resulting from various deposition techniques are usually dominated by residual donors. To date, the true nature of this donor conduction is not known. Nitrogen vacancies, residual oxygen, and growth defects are cited as potential causes for the residual n-type... (Read more)
- 476. J. Appl. Phys. 73, 8519 (1993) , “Generation Mechanisms of Paramagnetic Centers by Gamma-Ray Irradiation at and near the Si/SiO2 Interface”, K. Awazu, K. Watanabe, H. Kawazoe.Pb (·SiSi3) and E (·SiO3) centers in the Si/SiO2 structure under gamma-ray radiation are studied with the electron-spin-resonance technique. The Si/SiO2 structures of (111), (110), and (100) planes... (Read more)
- 477. J. Appl. Phys. 73, 1797 (1993) , “Magnetic Resonance Spectroscopy in Silver-Doped Silicon”, N. T. Son, T. Gregorkiewicz, and C. A. J. AmmerlaanIn silver-doped silicon, several new electron paramagnetic resonance spectra were observed. Three of these, labeled Si-NL45, Si-NL46, and Si-NL47, were detected in n-type samples. The spectra have trigonal symmetry; the effective electron spin value S equals 1/2. The spectra Si-NL45... (Read more)
- 478. J. Catalysis 140, 585-600 (1993) , “Studies of Gas Adsorption on ZnO Using ESR, FTIR Spectroscopy, and MHE (Microwave Hall Effect) Measurements”, Na B. K., Walters A. B. and Vannice M. A.This paper describes the application of a new technique-Microwave Hall Effect (MHE) measurements-to measure electron mobilities and to determine the effect of adsorption on electron densities of powders. Conduction electron densities calculated from microwave measurements of both mobilities and... (Read more)
- 479. J. Opt. Soc. Am. B 10, 913 (1993) , “Raman-heterodyne-detected nonlinear susceptibility with an arbitrary radio-frequency field strength”, X. -F. He, P. T. H. Fisk, N. B. MansonRaman-heterodyne-detected complex nonlinear susceptibility has been measured and analyzed in detail with a radio-frequency field strength varying from weak to strong. The experiments were carried out on the nitrogen-vacancy color center in diamond involving both nuclear magnetic resonance and electron paramagnetic resonance transitions. The dispersive and the absorptive components of the nonlinear susceptibility are shown to have different saturation behaviors, and an anomalous-amplitude line shape arises where the dispersion component dominates in the response spectrum at high RF powers. The experimental results are found to be in good agreement with theoretical profiles, where no adjustable parameter is included in the calculation. (Read more)
- 480. J. Phys.: Condens. Matter 5, 7929 (1993) , “The R2 EPR centre and 1.685 eV absorption line in diamond”, A. Mainwood, J. E. Lowther, J. A. van WykThe R2 EPR centre and 1.685 eV zero-phonon line seen in the optical absorption spectrum of diamond. have been shown to correlate in intensity and are believed to be associated with the same defect. We propose that the defect responsible is a highly strained vacancy, the origin of strain possibly... (Read more)
- 481. J. Phys.: Condens. Matter 5, 3019 (1993) , “ENDOR of the P2 centre in type-Ia diamonds”, J. A. van Wyk, J. H. N. LoubserThe P2 centre was the first defect observed in diamond with electron spin resonance. Because of a very complicated ESR spectrum many years elapsed before the correct model was determined. Accurate spin Hamiltonian parameters have been determined from extensive ENDOR measurements at room temperature.... (Read more)
- 482. Phys. Lett. A 178, 205-208 (1993) , “A new ESR signal of intrinsic defects in electron-irradiated p-type GaAs”, Y. Q. JiaH. J. von BardelebenElectron spin resonance studies of p-type ([Zn] = 7 × 1017 cm−3) GaAs irradiated by 1.5 MeV electrons reveal a new signal at g = 1.99. The ratio of spin concentration to electron dose is determined as 3 cm−1, the highest among those reported in electron- irradiated GaAs. We... (Read more)
- 483. Phys. Rev. B 48, 4437 (1993) , “Identification of the BiGa heteroantisite defect in GaAs:Bi”, M. Kunzer, W. Jost, U. Kaufmann, H. M. Hobgood, R. N. ThomasGaAs lightly doped with the heaviest group-V atom, bismuth (Bi), has been studied by conventional electron-spin resonance (ESR) and by ESR detected via the magnetic-circular-dichroism (MCD) absorption. A new Bi-related sharp-line MCD band has been observed on which two MCD-ESR lines have been... (Read more)
- 484. Phys. Rev. B 48, 2418-2435 (1993) , “Structural relaxation of Pb defects at the (111)Si/SiO2 interface as a function of oxidation temperature: The Pb-generation-stress relationship”, A. StesmansElectron-spin-resonance (ESR) studies of intrinsic Pb defects at the (111)Si/SiO2 interface have been carried out as a function of oxidation temperature Tox for the range 22<ToxTox and high-Tox... (Read more)
- 485. Phys. Rev. B 48, 17878-17884 (1993) , “Electron-spin-resonance studies of donors in wurtzite GaN”, W. E. Carlos, J. A. Freitas Jr., M. Asif Khan, D. T. Olson, J. N. KuzniaElectron-spin-resonance (ESR) measurements have been performed on a series of wurtzite GaN films grown on sapphire substrates by low-pressure metal-organic chemical-vapor deposition. The sample set included films grown with both AlN and GaN buffer layers. The ESR signal results from residual donors... (Read more)
- 486. Phys. Rev. B 48, 17595 (1993) , “Nature of the native-defect ESR and hydrogen-dangling-bond centers in thin diamond films”, H. Jia, J. Shinar, D. P. Lang, M. PruskiThe X-band ESR of thin diamond films deposited from a mixture of 99.5% H2 and 0.5% CH4 is compared to those of films similarly prepared from D2-CD4 and H2-13CH4 mixtures. The main line and the satellites at ±7.2 G are... (Read more)
- 487. Phys. Rev. B 48, 15144-15147 (1993) , “Conduction-electron spin resonance in zinc-blende GaN thin films”, M. Fanciulli, T.Lei, T.D.MoustakasWe report electron-spin-resonance measurements on zinc-blende GaN. The observed resonance has an isotropic g value of 1.9533±0.0008 independent of temperature, a Lorentzian line shape, and a linewidth (18 G at 10 K) which depends on temperature. The spin-lattice relaxation time at 10 K was... (Read more)
- 488. Phys. Rev. B 47, 8816 (1993) , “Paramagnetic resonance of photoexcited N-V defects in diamond. II. Hyperfine interaction with the 14N nucleus”, X. -F. He, N. B. Manson, P. T. H. FiskHyperfine interactions associated with the 14N nucleus in the diamond N-V defect have been investigated using Raman-heterodyne techniques. The measured nuclear-magnetic-resonance (NMR) and electron-nuclear-double-resonance frequencies were well accounted for by the triplet-spin... (Read more)
- 489. Phys. Rev. B 47, 8809 (1993) , “Paramagnetic resonance of photoexcited N-V defects in diamond. I. Level anticrossing in the 3A ground state”, X. -F. He, N. B. Manson, P. T. H. FiskRaman-heterodyne-detected paramagnetic resonance has been used to study the level anticrossing in the 3A state of the N-V defect in diamond. The electron-paramagnetic-resonance (EPR) frequencies are well accounted for by a triplet-spin Hamiltonian. Comparison of the EPR spectra with the... (Read more)
- 490. Phys. Rev. B 47, 7025 (1993) , “Electron-Paramagnetic-Resonance Investigation of the Iron-Indium Pair in Silicon”, W. Gehlhoff, P. Emanuelsson, P. Omling, and H. G. GrimmeissA defect consisting of a substitutional indium and an interstitial iron ion in silicon has been studied using the electron-paramagnetic-resonance (EPR) technique. The defect is found to appear in two different configurations, where the iron ion occupies two different interstitial positions near the... (Read more)
- 491. Phys. Rev. B 47, 6363-6380 (1993) , “Electron paramagnetic resonance of multistable interstitial-carbonsubstitutional-group-V-atom pairs in silicon”, X. D. Zhan, G. D. WatkinsA total of five new electron paramagnetic resonance (EPR) centers are observed in electron-irradiated P-, As-, and Sb-doped silicon. Three are identified as arising from the neutral charge state of the stable configuration and two of the four metastable configurations of an... (Read more)
- 492. Phys. Rev. B 47, 3987 (1993) , “Evidence for an anti-structure-pair in GaAs generated by electron irradiation at room temperature obtained from optically detected electron-nuclear double resonance”, K. Krambrock and J.-M. SpaethThe microscopic structure of a paramagnetic arsenic antisite-related defect in GaAs electron irradiated at room temperature has been studied using optically detected electron-nuclear double resonance (ODENDOR). In addition to the ODENDOR lines of the nearest and next-nearest As ligands those of a Ga... (Read more)
- 493. Phys. Rev. B 47, 10899-10902 (1993) , “Defects in porous p-type Si: An electron-paramagnetic-resonance study”, H. J. von Bardeleben, D. Stievenard, A. Grosman, C. Ortega, J. SiejkaThe defects in p+ porous silicon of low and high porosity have been studied by using electron-paramagnetic-resonance (EPR) spectroscopy and compared with an impurity analysis obtained from nuclear reaction analysis (NRA). The EPR measurements show, in both high- and low-porosity samples,... (Read more)
- 494. Phys. Rev. Lett. 71, 557 (1993) , “Bond-Centered Muonium in Diamond: Resolved Nuclear Hyperfine Structure”, J. W. Schneider, R. F. Kiefl, K. H. Chow, S. Johnston, J. Sonier, T. L. Estle, B. Hitti, R. L. Lichti, S. H. Connell, J. P. E. Sellschop, C. G. Smallman, T. R. Anthony, W. F. BanholzerThe nuclear hyperfine structure of bond-centered muonium in 13C enriched diamond has been resolved using time-differential transverse-field muon spin rotation. The measured nearest-neighbor 13C hyperfine parameters are compared to theoretical values from a recent ab initio... (Read more)
- 495. Phys. Rev. Lett. 71, 117 (1993) , “Electron Paramagnetic Resonance of Molecular Hydrogen in Silicon”, P. Stallinga, T. Gregorkiewicz, and C. A. J. AmmerlaanIn briefly annealed silicon samples implanted with hydrogen and deuterium an electron paramagnetic resonance spectrum is detected. It is identified as arising from a hydrogen molecule oriented in the ?111? crystallographic direction and located most probably at an interstitial site. Such a result is... (Read more)
- 496. Phys. Rev. Lett. 70, 3816 (1993) , “Structure-Sensitive Spectroscopy of Transition-Metal-Hydrogen Complexes in Silicon”, P. M. Williams, G. D. Watkins, S. Uftring, and Michael StavolaSeveral centers that involve Pt and H have been introduced into n-type Si and studied by electron paramagnetic resonance and vibrational spectroscopy to provide unique structure-sensitive data for an H-passivated deep level impurity. Through the observation of Pt-H and -D hyperfine interactions, a... (Read more)
- 497. Phys. Rev. Lett. 70, 1723 (1993) , “Relationship between Stress and Dangling Bond Generation at the (111)Si/SiO2 Interface”, A. Stesmans.Electron spin resonance analysis of the intrinsic density [Pb] of interfacial Pb (?Si?Si3) defects in thermal (111)Si/SiO2 as a function of oxidation temperature Tox in the range 200–1140°C reveals a close linear correlation with the average... (Read more)
- 498. Physica B 185, 228-233 (1993) , “Study of defects in wide band gap semiconductors by electron paramagnetic resonance”, M. Fanciulli, T. D. MoustakasDefects in diamond, baron nitride and gallium nitride, grown by various deposition methods, were investigated by EPR measurements. In diamond films the observed EPR signal has a g value of 2.0028, peak-to-peak linewidth of 3–5 Gauss and spin-lattice relaxation time, at 293 K, of 10-6 s. In... (Read more)
- 499. Solid State Commun. 88, 887-889 (1993) , “Submillimeter EPR evidence for the As antisite defect in GaAs”, R. J. Wagner, J. J. Krebs and G. H. StaussA. M. WhiteA new EPR spectrum has been observed in semi-insulating GaAs with a sub- millimeter laser magnetic resonance spectrometer. The spectrum is isotropic with g= 2.04 ± 0.01 at v=11.236cm-1. The hyperfine interaction parameter |A| (I=3/2) is 0.090 ± 0.001 cm-1.The spectrum is attributed to the As antisite defect in GaAs and the parameters are compatible with the P antisite defect in GaP. (Read more)
- 500. Appl. Phys. Lett. 60, 718 (1992) , “Optically detected electron paramagnetic resonance of arsenic antisites in low-temperature GaAs layers”, H.-J. Sun, G. D. Watkins, F. C. Rong, L. Fotiadis, E. H. PoindexterArsenic antisites in GaAs layers grown by molecular-beam epitaxy at low substrate temperatures (~200 °C) were observed using electron paramagnetic resonance (EPR), magnetic circular dichroism in absorption (MCDA), and MCDA-detected EPR. This observation confirms that there is a MCDA band... (Read more)
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