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- 901. Sov. Phys. Semicond. 9, 104 (1975) , “Comparison of the results of an investigation of ESR signals and high-temperature measurements of the Hall effect and electrical conductivity of iron-doped GaAs samplesr”, N. I. Suchkova , N. N. Solov'ev
- 902. Sov. Phys. Semicond. 8, 1049 (1975) , “Interaction of Hydrogen Atoms and Radiation Defects in the Case of H+ Ion Implantation in Silicon”, V. A. Botvin, Yu. V. Gorelkinskii, V. A. Kudryashev, V. O. Sigle.In an earlier paper1 we demonstrated that paramagnetic defects (Si-B2) were formed as a result of implantation of hydrogen ions in silicon single crystals. We also showed that implanted hydrogen atoms participated in the formation of these defects. Additional experiments were carried out in order to determine the interaction between the implanted hydrogen atoms and defects and to find the influence of these atoms on the recovery of the carrier density.
- 903. Sov. Phys. Solid State 17, 991 (1975) , “Electron spin resonance of Co2+ ions in synthetic diamonds”, V. S. Bagdasaryan, . A. Markosyan, M. A. Matosyan, O. S. Torosyan, E. G. Sharoyan
- 904. Sov. Phys. Solid State 16, 2118 (1975) , “Electron paramagnetic resonance spectrum and the infrared absorption of diamonds doped with nitrogen isotopes”, Yu. A. Klyuev, V. I. Nepsha, A. M. Naletov
- 905. Sov. Phys. Solid State 16, 1377 (1975) , “Cross relaxation in ESR spectra of synthetic diamonds”, L. A. Shulman, G. A. Podzyarei
- 906. J. Catalysis 35, 167-175 (1974) , “Studies of electron spin resonance spectra and activity of supported zinc oxide catalysts for hydrogenation of ethylene”, D. L. Harrison, A. J. Parker, Marjorie J. Sharp and H. SteinerThe activities and ESR spectra of zinc oxide catalysts for hydrogenation of ethylene at 150 °C have been studied. No catalytic activity was observed for silica- or alumina-supported ZnO at surface coverages below 2–3 nominal monolayers. The ESR signal at g = 1.958 from the zinc oxide was... (Read more)
- 907. J. Chem. Phys. 60, 2148-2151 (1974) , “Formation of O– in ZnO from the dissociation of adsorbed N2O”, Ning-Bew Wong, Younes Ben Taarit, and Jack H. LunsfordPhotoinduced O ions or V-type centers have been detected in ZnO following ultraviolet irradiation at 196°C. The EPR spectrum of the ions is characterized by g=2.021 and g = 2.0026. The concentration of O was greatly... (Read more)
- 908. Phys. Lett. A 50, 49-50 (1974) , “Hyperfine interaction of adsorbed O2− with GaAs surface atoms”, G. H. Stauss , J. J. KrebsEPR measurement of the hyperfine interaction between Ga nuclei and O2− ions adsorbed on clean GaAs is reported. The surface Ga atomic orbital concerned has an almost purely p character. (Read more)
- 909. Phys. Lett. A 49, 425 (1974) , “An orientation-dependent defect in ion-implanted silicon*1”, Y. H. Lee, P. R. Brosious, J. W. Corbett.A new EPR spectrum is resolved in the N+-implanted silicon, and this center can be produced only by the (110) channeling ions in the region underneath the amorphous layer. (Read more)
- 910. Phys. Rev. B 9, 4351-4361 (1974) , “EPR study of defects in neutron-irradiated silicon: Quenched-in alignment under <110>-uniaxial stress”, Young-Hoon Lee and James W. CorbettThe stress effect in an EPR study is first treated rigorously in terms of the piezospectroscopic tensor, taking account of the local symmetry of a defect. It is found that the degree of alignment (n?/n?) provides incisive information on the structure of a defect; in general, a... (Read more)
- 911. Phys. Rev. B 9, 2607 (1974) , “EPR of a Jahn-Teller distorted (111) carbon interstitialcy in irradiated silicon”, K. L. Brower.An electron-paramagnetic-resonance (EPR) study of irradiated, p-type silicon doped with carbon enriched with 13C has revealed that the Si-G11 spectrum possesses a 13C hyperfine structure. Owing to the complexity and lack of resolution in the observed spectrum, we found it... (Read more)
- 912. phys. stat. sol. (a) 25, 541 (1974) , “Electron Paramagnetic Resonance in Diamond Implanted at Various Energies and Temperatures”, P. R. Brosious, Y. H. Lee, J. W. Corbett, L. J. ChengAmorphous carbon layer EPR measurements have been fitted to a model which predicts the critical fluences at which the layer forms for any temperature and ion species; it predicts the layer will not form during nitrogen ion implantation in diamond above 1031°K. A new anisotropic EPR spectrum labeled D-A4 is observed after hot-implantation (650°C) with nitrogen ions. It is thought to be a spin-one-center arising from a small D-tensor interaction with <111> symmetry. Hot implantation suppresses the formation of the amorphous layer and enhances creation of crystalline lattice defects. (Read more)
- 913. phys. stat. sol. (a) 22, K55 (1974) , “EPR of Conduction Electrons Produced in Silicon by Hydrogen Ion Implantation”, Yu. V. Gorelkinskii, V. O. Sigle, Zh. S. Takibaev.It has been observed using electrical measurements that proton bombardment at room temperature followed by annealing at about 300ºC produced shallow donors in silicon with a donor ionization energy of 26 meV (1,2). This note reports first EPR measurements on conduction electrons produced in Si by... (Read more)
- 914. phys. stat. sol. (a) 21, 677 (1974) , “EPR Measurements in Ion-Implanted Diamond”, P. R. Brosious, J. W. Corbett, J. C. BourgoinA new EPR spectrum, arising from defects in diamond created by boron, carbon, and nitrogen ion-implantation, is observed. The spectrum, lattice damage production, and annealing of damage are discussed and are ascribed to amorphous carbon. (Read more)
- 915. Radiat. Eff. 22, 169 (1974) , “New EPR Spectra in Neutron-Irradiated Silicon (II)”, Y. H. Lee, P. R. Brosious, J. W. Corbett.Four new EPR spectra, arising from intrinsic defects in silicon created by neutron-irradiation, are resolved. Each spectrum is briefly discussed. Further detailed studies are required to establish defect models.
- 916. Solid State Commun. 15, 1781 (1974) , “EPR evidence of the self-interstitials in neutron-irradiated silicon*1”, Y. H. Lee, J. W. Corbett.Detailed studies on Si---P6 spectrum show that the spectrum has an unusual g-tensor symmetry (monoclinic II) and a large stress alignment (n/n|| = 17). A number of defect models for this spectrum were considered; two (<100> split-interstitial and <100> di-interstitial) are briefly discussed here.... (Read more)
- 917. Solid State Commun. 15, 1475-1479 (1974) , “Optical and paramagnetic properties of ZnO-Crystals simultaneously doped with copper and hydrogen”, E. Mollwo, G. Müller and D. ZwingelIn ZnO crystals, containing both Cu and H(D), we observe characteristic absorption peaks in the near i.r. and three new EPR signals. We explain these results by the formation of impurity complexes consisting of an OH center and one or two Cu ions. (Read more)
- 918. Solid State Commun. 14, 953-956 (1974) , “Temperature dependence of the ESR spectrum of the zinc vacancy in ZnO”, D. Galland and A. HerveThe temperature dependence of the spectrum of two trapped hole centers introduced by electron irradiation in ZnO is described. The results firmly establish the identification of these centers as being two slightly inequivalent configurations of the zinc vacancy in its negative charge state. (Read more)
- 919. Solid State Commun. 14, 735 (1974) , “On the Magnetic Properties of Dislocations in Silicon”, U. Schmidt, E. Weber, H. Alexander, W. Sander.The anisotropy of a group of equidistant lines in the EPR spectrum of plastically deformed Si can be described as line splitting in a nearly axial crystal field, the axis being parallel to the Burgers vector of the dislocations. We suppose that the spins of the unpaired electrons in the core of the... (Read more)
- 920. Solid State Commun. 14, 45-49 (1974) , “Paramagnetic and optical properties of Na-doped ZnO single crystals”, D. Zwingel and F. GärtnerESR-spectra of Na-doped ZnO single crystals are reported, caused by a hole trapped at the Na+ center. The isotropic part of the HFS is positive. An emission, due to recombination at the center, is reported, polarized c and peaked at 570 nm. The influence of covalent bonding is discussed. (Read more)
- 921. Sov. Phys. JETP 39, 721 (1974) , “Investigation of the Properties of the Dislocation EPR Spectra in Silicon”, S. V. Broude, V. A. Grazhulis, V. V. Kveder, Yu. A. Osipyan.We investigated the properties of the dislocation sEPR spectra in Si in the temperature interval from 1.3 to 150ºK. At helium temperatures we observed anomalies in the behavior of the dispersion signals χ' under conditions of adiabatic rapid passage (APR) through resonance. It is shown that the spectrum of the D centers has a hyperfine (hf) structure, with a line width ∆Hi ~0.2-0.3 Oe (the distance between neighboring hf lines is of the order of their width). It is established that under ARP conditions excitations are transferred between the hf lines as a result of spin-spin interactions with a characteristic time τ3, equal to 3-10 sec in the range 1.3-4.2ºK and weakly dependent on the temperature and on the microwave power. We measured the dependence of the integrated intensity of the absorption signals χ'' on the temperature in the 20-150ºK range. A strong deviation from the Curie low was observed at T=40-50ºK. The temperature dependence of the quantity τ1τ2 was measured in the same temperature range, under the assumption that the hf lines have a Lorentz shape. An anomaly at T=40-50ºK was observed also on the plot of τ1τ2=f(1/T). It is concluded that a magnetic phase transition takes place in the D-center system at 40-50ºK, and consequently the dislocations in Si can be regarded as models of one-demensional chain of spins with exchange interactions.
- 922. Advances in Molecular Relaxation Processes 5, 211-218 (1973) , “Chemisorption of oxygen on transition metal oxides studied by EPR”, Krystyna DyrekThe method was applied to the investigation of adsorption of oxygen on the transition metal oxides MnO, FeO, CoO, Cu2O, and their solid solutions in the diamagnetic matrices ZnO and MgO. It has been found that in the case of pure oxides and their solid solutions at high magnetic metal ion... (Read more)
- 923. Chem. Phys. Lett. 21, 421-425 (1973) , “ESR studies of aqueous suspensions of zinc oxide”, Joseph Cunningham and Sean CorkeryResults are presented from a technique which allows reproducible ESR spectra to be obtained from circulating aqueous suspensions of various zinc oxides. Singlet ESR signals with g ≈ 1.96 were observed in the dark from In-ZnO and from several zinc oxides under UV illumination. Fast and slow... (Read more)
- 924. J. Appl. Phys. 44, 4243 (1973) , “Electron Spin Resonance in Argon-Ion-Implanted Silicon”, K. -C. Chu, W. R. Hurren, E. Hale, J. Reigle.A new paramagnetic center with g = 2.0029 is observed, in both n- and p-type silicon after they are heavily implanted (higher than 1017 ions/cm2) with 150-keV argon ions. ©1973 American Institute of Physics ... (Read more)
- 925. J. Lumin. 6, 376-384 (1973) , “2S1/2 state ions in inorganic luminescent materials*1”, G. Born, A. Hofstaetter , A. ScharmannSelected examples of impurity ions with one unpaired electron in an unfilled shell are Pb3+ ions in II–IV compounds (ZnO, ZnSe, ZnTe), Pb3+ in CaWO4,F centres in alkali halides and Ag0 and Au0 atoms in radiophotoluminescent (RPL) glasses. Comparative studies of EPR, luminescence,... (Read more)
- 926. Jpn. J. Appl. Phys. 12, 1307 (1973) , “ESR Studies on Defects and Amorphous Phase in Silicon Produced by Ion Implantation”, K. Murakami, K. Masuda, K. Gamo, S. Namba.Paramagnetic defects have been studied over a wide dose range. At doses>6×1014 P+/cm2, only one isotropic spectrum of g=2.0062±0.0004 which characterizes a continuous amorphous layer is observed. At doses between 0.1 and... (Read more)
- 927. Phys. Rev. B 8, 3836 (1973) , “Quantitative Piezospectroscopy of the Ground and Excited States of Acceptors in Silicon”, H. R. Chandrasekhar, P. Fisher, A. K. Ramdas, and S. RodriguezA piezospectroscopic study of the excitation lines from the ?8 ground state to the first two ?8 excited states of the p3/2 series of boron, aluminum, and indium (lines 1 and 2) and to the first ?6 excited state of boron (2p? line) has been made... (Read more)
- 928. Phys. Rev. B 8, 2810 (1973) , “EPR Studies in Neutron-Irradiated Silicon: A Negative Charge State of a Nonplanar Five-Vacancy Cluster (V5-)”, Y. H. Lee, J. W. Corbett.EPR studies are carried out for the float-zone intrinsic silicon irradiated with reactor neutrons up to the total fluence 1018 n/cm2. Details of the Si29 hyperfine structure and of the g tensor in the P-1 spectrum are observed with respect to temperature from 77 to... (Read more)Si| EPR neutron-irradiation| 29Si P1 Silicon cluster(>3) vacancy .inp files: Si/V5- | last update: Takahide Umeda
- 929. Phys. Rev. B 7, 2630 (1973) , “A Comparative Electron-Spin-Resonance Study of the Ground State and a Photoconverted Metastable State of the Mg+ Donor in Silicon”, J. E. Baxter, G. Ascarelli.Magnesium diffused into silicon forms a deep-double-donor state. Depending on the compensation, the distinct valence states Mg0, Mg+, or Mg++ are possible. EPR measurements have been performed at 55 GHz on the paramagnetic valence state Mg+ at... (Read more)
- 930. Sov. Phys. Semicond. 6, 1453 (1973) , “Paramagnetic Centers in Silicon Irradiated with Heavy Charged Particles”, V. A. Botvin, Yu. V. Gorelkinskii, V. O. Sigle, M. A. Chubisov.The ESR method was used to study paramagnetic centers generated in silicon single crystals by irradiation with 37-MeV α particles or 9-MeV protons at 273ºK. The experiments were carried out on silicon grown by the floating-zone and Czochralski methods and doped with P31, B11, and A27. The existence of Si-P3, Si-P1, Si-P4, Si-P5, Si-S1 (Si-B2), and Si-S2 centers was established in the proton-irradiated samples. The Si-S1 and Si-S2 centers were not found in the α-irradiated silicon. The characteristics of isochronous annealing of the various centers were determined. The distribution of the paramagnetic centers along the trajectories of the incident particles was determined by successive removal of silicon layers from the irradiated side. The rates of introduction of the paramagnetic centers by α particles and protons were estimated.
- 931. J. Appl. Phys. 43, 3499-3506 (1972) , “Electron Paramagnetic Resonance of the lattice Damage in Oxygen-Implanted Silicon”, K.L. Brower and Wendland BeezholdThe nature of the lattice damage produced at room temperature in ion-implanted intrinsic and n-type silicon has been studied as a function of 160-keV O+ ion fluence using electron paramagnetic resonance (EPR). The known EPR spectra observed were the negative divacancy (Si-G7), the... (Read more)Si| EPR ion-implantation neutron-irradiation| 31P D G7 Oxygen P3 Phosphorus S1 S2 SL2 Silicon amorphous vacancy .inp files: Si/SL2 | last update: Takahide Umeda
- 932. J. Lumin. 5, 385-405 (1972) , “Trapping and recombination processes in the thermoluminescence of Li-doped ZnO single crystals*1”, D. ZwingelThe thermoluminescence of Li-doped ZnO single crystals is investigated in the temperature range 4.2–300 K. A glow curve is observed with three maxima, two of them emitting the strong polarized yellow luminescence of ZnO. By varying the Li concentration in the range 0.1–200 ppm a change... (Read more)
- 933. J. Vac. Sci. Technol. 9, 87-90 (1972) , “Properties of ZnO Films Prepared by dc and rf Diode Sputtering”, J. VuillodA brief description of the dc and rf diode sputtering unit is first presented. The study of properties of the films is reviewed taking into consideration two main parameters, oxygen partial pressure and substrate temperature. Reflection electron diffraction and x-ray diffraction studies show that... (Read more)
- 934. Phys. Rev. B 5, 4274 (1972) , “17O Hyperfine Structure of the Neutral (S=1) Vacancy-Oxygen Center in Ion-Implanted Silicon”, K. L. Brower.The intensity of the 17O hyperfine spectrum associated with the 28Si-17O-28Si isotopic configuration of the vacancy-oxygen (Si-S1) center was enhanced by ion implantation of 17O into silicon. The Si-S1 17O hyperfine spectrum was... (Read more)Si| EPR ion-implantation| 17O Oxygen SL1 pair(=2) vacancy .inp files: Si/V-O* | last update: Takahide Umeda
- 935. Phys. Rev. B 5, 3988 (1972) , “Electron-Paramagnetic-Resonance Detection of Optically Induced Divacancy Alignment in Silicon”, C. A. J. Ammerlaan, G. D. Watkins.An EPR study was made of the divacancy in silicon, produced by 1.5-MeV electron irradiation at room temperature, under illumination with polarized light. A light-induced alignment of divacancies among the various Jahn-Teller distortion directions in the lattice is observed for the singly positively... (Read more)
- 936. Radiat. Eff. 15, 77 (1972) , “New EPR Spectra in Neutron-Irradiated Silicon”, Y. H. Lee, Y. M. Kim, J. W. Corbett.Six new EPR spectra are reported which are apparently due to intrinsic defects created in the neutron-irradiation and, in some cases, annealing of silicon. In addition a spectrum similar to, but distinct from, that due to the vacancy-phosphorus center is reported. Some tentative defect models are discussed to emphasize the features of the spectra, but more detailed studies are required to establish the identity of the giving rise to these spectra.
- 937. Sov. Phys. Semicond. 5, 1930 (1972) , “EPR of Zinc Atoms in p-Type Silicon”, V. B. Ginodman, P. S. Gladkov, B. G. Zhurkin, B. V. Kornilov.Zinc is a double accepter in silicon and it introduces two levels, E + 0.31 and E + 0.55 eV, into forbidden band [1,2]. The electrical and optical properties of zinc-doped silicon have been investigated by several workers [2-4]. A brief report of the observation of EPR in silicon is given in [5,6]: in these investigations the magnetic field H was perpendicular to the axis of compression of a crystal. Uniaxial compression gave rise to a structure in EPR spectrum of Zn67 and this structure was attributed to the hyperfine interaction of an unpaired hole with the magnetic moment of the Zn67 nucleus. The present paper describes the result of an investigation of the EPR of the Zn- state of zinc in p-type silicon doped with zinc in p-type silicon doped with zinc and phosphorus. The investigation was carried out at liquid helium temperature.
- 938. Sov. Phys. Solid State 14, 1521 (1972) , “EXCHANGE BROADENING OF THE HYPERFINE COMPONENTS OF THE ESR SPECTRUM OF NITROGEN IN DIAMOND”, L. A. Shulman, G. A. Podzyarei
- 939. Sov. Phys. Solid State 13, 1809 (1972) , “DEFECTS IN SYNTHETIC DIAMOND POWDERS AND THE DYNAMIC JAHN-TELLER EFFECT”, Yu. A. Bratashevskii, F. N. Bukhanko, N. D. Samsonenko, O. Z. Shapiro
- 940. J. Appl. Phys. 42, 864 (1971) , “New EPR Spectra in Irradiated Silicon”, D. F. Daly.The purpose of this brief note is to report the spin Hamiltonian parameters for two new EPR spectra that have been observed in annealed irradiated silicon. Comparisons are also made with the parameters of centers already belonging to the extensive catalogue of EPR spectra in silicon. In acordance... (Read more)
- 941. J. Appl. Phys. 42, 722 (1971) , “New S = 1 EPR Center in Irradiated Diamond”, Y. M. Kim, G. D. WatkinsElectron spin resonance studies have been made of natural diamond crystals electron-irradiated at room temperature. A radiation-induced spectrum is identified as arising from a new anisotropic S=1 center. The S=1 center is characterized by: g1=2.0026,... (Read more)
- 942. J. Phys. Chem. Solids 32, 499-509 (1971) , “Trapped-hole centers containing lithium in MgO, CaO and SrO”, O. F. SchirmerWe report an ESR investigation of a center in MgO, CaO and SrO consisting of an O− ion neighbored by a substitutional Li+ ion. The center is identified by comparison with the isomorphous centers in ZnO and BeO and with the analogous V1, VOH and VF centers in the alkaline earth oxides. The... (Read more)
- 943. Jpn. J. Appl. Phys. 10, 52-62 (1971) , “Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I”, Y. NishiThree kinds of paramagnetic centers named PA, PB and PC have been found in a silicon-silicon dioxide structure at liquid nitrogen temperature. PA (g=∼2.000, ΔH=∼4 Oe), and PB having anisotropic g-value... (Read more)
- 944. Phys. Lett. A 36, 447-448 (1971) , “2S1/2 -states of Pb3+-ions in CaO and ZnO”, G. Born, A. Hofstaetter , A. ScharmannEPR-spectra of Pb3+-ions in CaO and ZnO are studied at 1.6 K. The g-values and the reduction of the hyperfine interaction constants A are correlated with the partial electron transfer to the ligands. (Read more)
- 945. Phys. Rev. B 4, 3250-3252 (1971) , “Spin-Hamiltonian Parameters and Spin-Orbit Coupling for V3+ in ZnO”, R. E. Coffman, Makram I. Himaya, Kathryn NyeuThe spin-Hamiltonian parameters for ZnO: V3+ have been refined using electron-paramagnetic-resonance (EPR) line position calculations. The principal sources of error are discussed. The accurate spin-Hamiltonian parameters are used to discuss the spin-orbit coupling within the 3d manifold... (Read more)
- 946. Phys. Rev. B 4, 1968 (1971) , “Electron Paramagnetic Resonance of the Neutral (S=1) One-Vacancy-Oxygen Center in Irradiated Silicon”, K. L. Brower.A new EPR spectrum, labeled Si-S1, has been observed in electron- or neutron-irradiated, n- or p-type, crucible-grown silicon under illumination with approximately band-gap light. The Si-S1 spectrum consists primarily of a fine-structure spectrum and a 29Si hyperfine spectrum. By... (Read more)
- 947. Phys. Rev. B 3, 2918 (1971) , “Electron-Paramagnetic-Resonance Study of Clean and Oxygen-Exposed Surfaces of GaAs, AlSb, and Other III-V Compounds”, D. J. Miller and D. HanemanClean surfaces of p-type GaP, GaAs, GaSb, and InAs and n-type GaAs, AlSb, and GaSb have been prepared by crushing in ultrahigh vacuum (10-9 Torr) and measured by the electron-paramagnetic-resonance technique at room temperature and 77°K. A small clean-surface signal was found. When... (Read more)
- 948. Radiat. Eff. 8, 229 (1971) , “Li-Defect Interactions in Electron-Irradiated n-Type Silicon by EPR Measurements”, B. Goldstein.Single crystal sylicon, both with and without oxygen, has been diffused with lithium to concentrations ~1017/cm3, irradiated woth 1 to 1.5 MeV electrons, and the ensuing defects studies by EPR measurements. The presene of oxygen strongly affects the properties of these defects. Measurements have indicated the presence of two new defects which involve Li---one in O-containing material and one in O-free material. The defects are observed in their electron-filled state, and indicate a net electron spin of 1/2. The defect spectra disappear (with time) at room temperature, and can be explained by the formation of other Li-involved defects which lie deeper in the energy bandgap and are not visible by EPR. Electron irradiatioin at 40ºK followecd by annealing at higher temperatures show that both EPR defects described above begin to form at about 200ºK and begin to decrease at about 275ºK---just as does the 250ºK reverse annealing observed generally for n-type Si. Based on these data, and the work of others, it is suggested that both defects form as a result of the motion of Si interstitial which produce a (Li-O-interstitial) complex in O-containing Si, and (Li-interstitial) complex in O-free Si.
- 949. Radiat. Eff. 8, 203 (1971) , “An EPR Study of Fast Neutron Radiation Damage in Silicon”, D. F. Daly, H. E. Noffke.Using electron paramagnetic resonance (EPR) the indensity of the point defects produced by fast neutron irradiation of silicon at room temperature has been determined and the concentration of each defect has been measured. Irradiations were perfrmed at an unmoderated fast burst reactor to assure that damage from gamma irradiation could be neglected and that all the obsserved damage could be attributed to desplacements by fast neutrons. Total fast neutron fluence between 1.2×1015 n/cm2 and 7×1015 n/cm2 was used. The initial rate of removal of the phosphorus donor agrees with the initial carrier removal. However, the production rate for the paramagnetic damage centers is approximately 10 per cent of the carrier removal and less than 1 per cent of the estimated number of displacements per neutron collision. For samples containing approcimately 1016 phosphorus donoers/cm3, the neutral spectrum is observed simultaneously with the negative divacancy spectrum (Si-G7) in both crucible-grown and float-zone crystals. According to the energy level scheme determined for these spectra in electron irradiation silicon, these spectra cannot appear simultaneously if the sample is in equilibrium and uniformly irradiated. From the observation of these spectra, it is concluded that the damage concentrarion and hence the depth of the Fermi level is nonuniform on a microscopic scale. These results are interpreted according to the cluster model for the neutron damage. The cluster consists of a core of damaged silicon with the Fermi level at the center of the band gap and a surrounding space charge region. Outside the space charge region, the Fermi level is the same as in undamaged silicon. It is concluded that the low production rate of the point defects and the non-uniform Fermi level constitute microscopic evidence for the defect cluster model of fast neutron damage in silicon.
- 950. Solid State Commun. 9, 313 (1971) , “ELECTRON SPIN RESONANCE OF SPIN S = 1 STATES IN UNIRRADIATED DIAMONDS”, Thomas SzendreiThree types of paramagnetic centres with effective spin S = 1 have been detected in natural unirradiated type Ib diamonds. The values of the zero field spitting are 200 oe, 220 oe and 246 oe. (Read more)
- 951. Sov. Phys. JETP 33, 623 (1971) , “Electron paramagnetic resonance of dislocations in silicon”, V. A. Grazhulis, Yu. A. Osip'yan
- 952. Sov. Phys. Solid State 13, 281 (1971) , “ELECTRON PARAMAGNETIC RESONANCE OF NITROGEN-ALUMINUM PAIRS IN DIAMOND”, M. Ya. Shcherbakova, E. V. Soboleva, N. D. Samsonenko, V. A. Nadolinnyi, P. V. Schastnev, A. G. Semenov
- 953. Sov. Phys. Solid State 12, 2303 (1971) , “EFFECT OF THE SPIN-SPIN RESERVOIR ON SATURATION OF THE NITROGEN EPR LINE IN DIAMOND”, L. A. Shulman, A. B. Brik, T. A. Nachalnaya, G. A. Podzyarei
- 954. Surf. Sci. 27, 375-378 (1971) , “ESR evidence of surface Fermi level anchoring by surface additives on ZnO”, J. P. Bonnelle and M. Guelton
- 955. J. Appl. Phys. 41, 2977 (1970) , “Analysis of an Electron Spin Resonance Spectrum in Natural Diamonds”, P. E. Klingsporn, M. D. Bell, and W. J. LeivoAn anisotropic electron spin resonance spectrum was observed in three natural Type Ib diamonds. The diamonds which exhibit the spectrum also show the spectrum from substitutional nitrogen donors previously observed by others. The spectrum consists of three anisotropic groups of lines. The spectrum... (Read more)
- 956. J. Catalysis 16, 44-52 (1970) , “Electron spin resonance investigation of electrical conductivity parameters of zinc oxide during surface reactions”, Morio Setaka, Kenneth M. Sancier and Takao KwanThe effect of the electron transfer process between the bulk and surface of ZnO upon oxygen sorption was investigated by measuring the changes of the following ESR parameters: the spin densities of the g = 1.96 and g ~ 2.0 signals, the intensity of a Mn2+ reference sample, and the crystal current of... (Read more)
- 957. J. Phys. Chem. Solids 31, 1381 (1970) , “The Annealing of the EPR-Signal Produced in Silicon by Plastic Deformation”, F. D. Wohler and H. AlexanderW. SanderIn silicon an EPR signal is produced by plastic deformation. The annealing behavior of this signal has been investigated, and the dislocation density and structure has been studied by the etch pit technique and by electron microscopy. The EPR-signal anneals in one stage with an activation energy of... (Read more)
- 958. Phys. Lett. A 33, 1-2 (1970) , “ESR spectra of the zinc vacancy in ZnO”, D. Galland and A. HerveElectron irradiated ZnO single crystals show anisotropic ESR spectra corresponding to a spin and a spin 1 hole centers. Tehy are respectively identified as the negative and the neutral charge states of the zinc vacancy. (Read more)
- 959. Phys. Lett. A 31, 147-148 (1970) , “ESR of electron irradiated ZnO confirmation of the F+ center”, J. M. Smith , W. E. VehseIrradiation of single crystals of ZnO with 2 MeV electrons produces a defect which has been identified by its ESR spectrum as an F+ center. A correlation between this center and the radiation induced optical absorption has been observed. (Read more)
- 960. Phys. Rev. B 2, 4110 (1970) , “Li-Defect Interactions in Electron-Irradiated n-Type Silicon”, B. Goldstein.Single-crystal silicon, both with and without oxygen, has been diffused with lithium to concentrations ? 1017/cm3, irradiated with 1-1.5-MeV electrons, and the ensuing defects studied by EPR and electrical measurements. The presence of oxygen strongly affects the properties of... (Read more)Si| EPR electron-irradiation| Lithium RCA3 RCA4 n-type .inp files: Si/Li3 Si/Li4 | last update: Takahide Umeda
- 961. Phys. Rev. B 1, 4071 (1970) , “Electron Paramagnetic Resonance Studies of a System with Orbital Degeneracy: The Lithium Donor in Silicon”, G. D. Watkins and Frank S. HamElectron-paramagnetic-resonance (EPR) and electron-nuclear double-resonance (ENDOR) spectra are reported for the first time for the isolated interstitial lithium shallow-donor center in silicon. In zero applied stress the EPR spectrum is complicated because of the fivefold orbital degeneracy... (Read more)
- 962. Phys. Rev. B 1, 1986-1994 (1970) , “Electron Paramagnetic Resonance of V3 + Ions in Zinc Oxide”, G. Filipovich, A. L. Taylor, R. E. CoffmanThe paramagnetic resonance of trace amounts of V3+ in single-crystal hexagonal zinc oxide is reported. The EPR spectrum is fitted with an axially symmetric spin Hamiltonian with five empirically determined parameters: D, gII, g?, A, and B. The spin-Hamiltonian... (Read more)
- 963. Phys. Rev. B 1, 1908 (1970) , “Electron Paramagnetic Resonance of the Aluminum interstitial in Silicon”, Keith L. BrowerElectron-paramagnetic-resonance spectra of the Al++ interstitial (Si-G18) produced in aluminum-doped (p-type) silicon by room temperature or 4K electron irradiations are presented and show that the Al++ is located in the tetrahedral interstitial site. The hyperfine... (Read more)
- 964. Solid State Commun. 8, 45-47 (1970) , “A note on the splitting of the ( →← -) line in the ESR spectrum of Fe3+ in ZnO”, I. D. Campbell , J. O. CopeIons of spin which occupy inequivalent cation sites in a wurtzite lattice show ESR line splitting. An analytical expression is derived which describes the dependence of the splitting of the ( →← -) line on crystal orientation. This expression provides a convenient method of deducing... (Read more)
- 965. Solid State Commun. 8, 1359-1361 (1970) , “Electron paramagnetic resonance associated with Zn vacancies in neutron-irradiated ZnO”, A. L. Taylor, G. Filipovich and G. K. LindebergLines in the EPR spectrum of ZnO crystals irradiated by 3.6 × 1018cm−2 fast neutrons are ascribed to holes on oxygen atoms in the basal plane of O4 tetrahedra which surround Zn vacancies. (Read more)
- 966. Solid State Commun. 8, 1103-1106 (1970) , “ESR studies of Yb3+ impurities in zinc oxide”, P. Schreiber , A. HausmannIn zinc oxide single crystals after diffusion with Yb2O3 two ESR spectra of Yb3+ ions have been observed which are attributed to substitutional and possibly interstitial ions. The parameters of the spin Hamiltonian have been determined taking into account third order corrections and a relatively... (Read more)
- 967. Sov. Phys. JETP 31, 677-679 (1970) , “Electron Paramagnetic Resonance in Plastically Deformed Silicon”, V. A. Grazhulis, Yu. A. Osipyan.Lightly doped silicon crystals were investigated experimentally by the electron paramagnetic resonance method. Paramagnetic centers, generated during plastic deformation of these crystals, were detected. The concentration of these centers increased monotonically with increasing degree of deformation. The EPR spectrum of these centers was anisotropic and had a partially resolved fine structure. The centers werestrongly annealed only at temperature T ≧ 600ºC and the activation energy of the annealing process was ~2 eV. It was concluded that these centers were due to electrons of broken bonds in the cores of dislocations with edge components.
- 968. Surf. Sci. 21, 1-11 (1970) , “ESR investigation of photodamage to zinc oxide powders*1”, K. M. SancierThe esr technique was used to investigate the effects of iron cyanide surface additives on photodamage to ZnO in powder form. The photodamage was monitored by the resonance at a g value of about 1.96, which is comprised of two independent resonances with g values of 1.9564 and 1.9600. The intensity... (Read more)
- 969. Appl. Phys. Lett. 15, 267 (1969) , “Electron Paramagnetic Resonance in Ion Implanted Silicon”, D. F. Daly, K. A. Pickar.Electron paramagnetic resonance spectra of radiation damage centers in silicon have been observed following implantation with nitrogen and phosphorous ions. Two of these spectra have narrow lines and can be fitted to anisotropic g-tensors and zero field splitting tensors. One is a new... (Read more)
- 970. Appl. Phys. Lett. 15, 208 (1969) , “Electron Paramagnetic Resonance of Defects in Ion-Implanted Silicon”, K. L. Brower, F. L. Vook, and J. A. BordersThe first EPR measurements of the identity of defects in an ion-implanted layer (< 15 000 Å) are reported. The SiP3 center is the dominant paramagnetic defect produced at room temperature by 400-keV O+ implantation in Al- and B-doped Lopex Si, and it anneals below 200°C. The... (Read more)
- 971. J. Appl. Phys. 40, 4902 (1969) , “EPR Study of Lithium-Diffused, Mn-Doped GaAs”, Reuben S. TitleAn EPR study of the Mn spectra in Li-diffused Mn-doped GaAs is presented. The EPR spectra show that the symmetry at the Mn site is orthorhombic. This thus indicates association between the Mn and Li impurities. A model is proposed which is consistent with the observed symmetry at the Mn site, the... (Read more)
- 972. J. Appl. Phys. 40, 3879 (1969) , “Three New Electron Spin Resonance Centers in Electron-Irradiated Silicon”, H. Horiye and E. G. WiknerElectron spin resonance (ESR) has been effectively used to study irradiation effects in silicon crystals. A good review paper on this subject is that of Watkins in which he lists 27 centers observed in irradiatedsilicon. The present paper describes three more centers which have not previously been... (Read more)
- 973. J. Phys. Chem. Solids 30, 2419-2425 (1969) , “ESR-resonances in doped GaAs and GaP*1”, S. Haraldson , C-G. RibbingESR-signals from GaP:Sn, GaP:Si and GaAs:Si, GaAs:Te are reported. GaP:Sn crystals give two Isotropie signals. The larger one of them with g-value 1.998 is attributed to bound donor electrons. No definite conclusion about the origin of the other line with g = 2.131 is presented. The system GaP:Si... (Read more)
- 974. Phys. Rev. 184, 739 (1969) , “Shallow Donor Electrons in Silicon. I. Hyperfine Interactions from ENDOR Measurements”, Edward B. Hale and Robert Lee MieherThe hyperfine interactions of Si29 lattice nuclei with ground-state donor electrons in arsenic-, phosphorus-, and antimony-doped silicon have been measured by electron-nuclear double resonance (ENDOR). Hyperfine constants are reported for each donor for about 20 shells containing a total... (Read more)
- 975. Phys. Rev. Lett. 23, 581 (1969) , “Electron Spin Resonance in Amorphous Silicon, Germanium, and Silicon Carbide”, M. H. Brodsky and R. S. TitleThe g values, line shapes, and linewidths of the ESR signals from within the bulk of amorphous silicon, germanium, and silicon carbide are found to be similar to those of the electron states observed in the surface regions of the corresponding crystalline forms. Discussion is given in terms of a... (Read more)Ge Si SiC| EPR| Carbon D Germanium Silicon amorphous dangling-bond .inp files: Si/amorphous | last update: Takahide Umeda
- 976. Solid State Commun. 7, ⅱ‐ⅲ (1969) , “ESR-resonance in doped GaAs and GaP”, S. Haraldson , C-G Ribbing
- 977. Solid State Commun. 7, 651-655 (1969) , “Elektronenspinresonanz an kupferdotierten ZnO-einkristallen”, I. Broser and M. SchulzESR-Untersuchungen wurden an ZnO:Cu-Einkristallen zwischen 4,2 und 1,5°K durchgeführt. Die den natürlich vorkommenden Isotopen 63Cu und 65Cu entsprechenden Hyperfeinstrukturlinien hatten eine deutlich geringere Linienbreite verglichen mit bisherigen Messungen. Die... (Read more)
- 978. Solid State Commun. 7, 579-583 (1969) , “Paramagnetic resonance of Gd3+ in ZnO”, A. HausmannZnO single crystals doped with Gd3+ by diffusion have been investigated by ESR at 35kMc/s. The spectra can be understood by a spin-Hamiltonian of axial symmetry. Further, a hyperfine interaction with odd Gd isotopes has been detected. An asymmetry of one set of finestructure lines indicates a... (Read more)
- 979. Sov. Phys. Solid State 11, 1104 (1969) , “ELECTRON PARAMAGNETIC RESONANCE OF IONIZED NITROGEN PAIRS IN DIAMOND”, M. Ya. Shcherbakova, E. V. Sobolev, N. D. Samsonenko, V. K. Aksenov
- 980. Sov. Phys. Solid State 10, 1789 (1969) , “THE STATE OF NITROGEN IMPURITIES IN SYNTHETIC DIAMONDS”, E. V. Sobolev, Yu. A. Litvin, N. D. Samsonenko, V. E. Ilin, S. V. Lenskaya, V. P. Butuzov
- 981. Surf. Sci. 13, 251-262 (1969) , “ESR studies of the interaction of O2, NO2, N2O, NO and Cl2 with zinc oxide”, R. D. Iyengar, V. V. Subba Rao , A. C. ZettlemoyerAn electron spin resonance study of the surface interaction of zinc oxide with oxygen, oxides of nitrogen (NO2, NO and N2O) and chlorine was made. Characteristic spectra obtained following adsorption of NO2 and NO were analyzed and attributed to rigidly adsorbed neutral molecules. Confirmation of... (Read more)
- 982. J. Catalysis 12, 278-280 (1968) , “An ESR investigation of nitrobenzene adsorbed on zinc oxide”, V. V. Subba Rao, R. D. Iyengar and A. C. ZettlemoyerAn ESR study of the interaction of nitrobenzene with nonstoichiometric ZnO surfaces was made. A 3-line spectrum with g values 1.9840, 2.0055 and 2.0225 was observed and was identified as due to nitrobenzene anion radicals strongly held to the surface. An unidentified signal at g = 2.0050 was left... (Read more)
- 983. J. Catalysis 11, 317-325 (1968) , “ESR studies on ZnO---Cr2O3 catalysts”, M. RlekW. Gunsser , A. KnappwostThe effects of the conditions of preparation of ZnO---Cr2O3 catalysts on their ESR spectra have been investigated by means of a Q-band spectrometer. The linewidths of oxides prepared by a low-temperature decomposition of the respective hydroxides in nitrogen flow are large and exhibit concentration... (Read more)
- 984. J. Phys. Chem. Solids 29, 1407-1429 (1968) , “The structure of the paramagnetic lithium center in zinc oxide and beryllium oxide”, O. F. SchirmerIf ZnO and BeO crystals containing Li are irradiated with u.v. or X-rays, a paramagnetic defect center is created consisting of a hole captured at an O2− ion next to a substitutional Li+ impurity. Because of the polarity of the crystals, the hole assumes its lowest energy, if the... (Read more)
- 985. J. Phys. Chem. Solids 29, 1369-1375 (1968) , “Paramagnetic resonance of ZnO:Mn++ single crystals”, A. Hausmann , H. HuppertzZnO single crystals doped with Mn++ have been investigated by ESR at 9.5 and 35 kMc/s. The measured spectra show minimal linewidth of 0.25 G. The resonances can theoretically be described by a spin Hamiltonian of axial symmetry of which the parameters have been determined with great accuracy.... (Read more)
- 986. Phys. Rev. 174, 881 (1968) , “Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Arsenic- and Antimony-Vacancy Pairs”, Edward L. Elkin and G. D. WatkinsTwo EPR spectra are observed in irradiated silicon (designated Si-G23 and Si-G24) which are identified with the neutral charge states of a lattice vacancy adjacent to a substitutional arsenic or antimony atom, respectively. EPR and ENDOR studies reveal a high degree of similarity between these... (Read more)
- 987. Phys. Rev. 170, 705 (1968) , “Electron Paramagnetic Resonance from Clean Single-Crystal Cleavage Surfaces of Silicon”, D. Haneman.EPR measurements have been made on aligned cleavage faces of Si, prepared and studied in high vacuum (<10-9 Torr). The signal, observable after accumulation, is a single line at g=2.0055 with width 6 G, similar to that from vacuum-crushed powders. It is unaffected by oxygen exposures... (Read more)
- 988. Solid State Commun. 6, 457-459 (1968) , “The cubic field parameter of ions in zinc oxide crystals”, A. HausmannZnO single crystals doped with Fe3+ or Mn2+ have been investigated by ESR at 35 kMc/s. The cubic field parameter |a| has been determined with greater accuracy than before. The values are |a| = 7.1 G and |a| = 46.8 G for Mn2+ and Fe3+ respectively. Further, considerations about the macroscopic... (Read more)
- 989. Sov. Phys. Semicond. 2, 688 (1968) , “Electron Paramagnetic Resonance of Boron in Dislocation-Free Silicon Crystals”, B. G. Zhurkin, N. A. Penin, N. N. Sibeldin.A study was made of the dependence of the EPR line of boron in uncompensated p-type silicon on the uniaxial compression, the concentration of boron in dislocation-free crystals, and on the dislocation density. It was found that an increase in the concentration of boron from 2・1016 to 1.5・1018 cm-3 broadened the resonance line. When the dislocation density was increased from zero to 2・105 cm-2, the resonance line broadened to more than twice its original width. The experiments were carried out at T = 4.2ºK and the compressive forces were applied along the [111] and [110]. The line width was practically independent of the direction of compression. The results obtained were in qualitative agreement with the theory.
- 990. Sov. Phys. Solid State 9, 1545 (1968) , “EXCHANGE PAIRS OF NITROGEN IMPURITIES IN DIAMOND”, L. A. Shulman, I. M. Zaritskii, K. A. Tikhonenko
- 991. Brit. J. Appl. Phys. 18, 1029 (1967) , “The dynamic Jahn - Teller and other effects in the high-temperature electron spin resonance spectrum of nitrogen in diamond”, J. H. N. Loubser, W. P. van RyneveldThe re-orientation of the Jahn-Teller distortion of the C-N bond in diamond containing substitutional nitrogen was observed, through its effect on shape of the hyperfine lines of the nitrogen electron spin resonance spectrum, in the range 600-1230°K. The weak satellite lines due to... (Read more)
- 992. J. Appl. Phys. 38, 337 (1967) , “Electron Spin Resonance in Semiconducting Diamonds”, M. D. BellElectron spin resonance (ESR) was studied in five semiconducting diamonds in the temperature range 108°370°K and at 4.2°K. The g factor is 2.0030±0.0003, and the linewidth varies from 0.3 to 8 Oe at room temperature. The number of spins contributing to the ESR... (Read more)
- 993. J. Catalysis 9, 331-335 (1967) , “ESR evidence of CO oxidation by more than one oxygen species sorbed on ZnO”, Kenneth M. SancierAn approach is described for investigating the nature of sorbed oxygen species on a semiconductor catalyst surface and for determining their relative reactivities in a heterogeneous oxidation reaction. Experimental information as to the types of oxygen species on ZnO with presorbed oxygen, ZnO... (Read more)
- 994. Phys. Lett. 25A, 232 (1967) , “Paramagnetic Centres in Proton-Irradiated Silicon”, H. Lütgemeier and K. SchnitzkeAs in the case of neutron irradiation P1, P3 and P6 centres occur in silicon after irradiation with protons of 3 MeV. A new centre is observed which is axially symmetric along the [111] axis and has the eigenvalues g|| = 2.0010 and g = 2.0103. (Read more)
- 995. Phys. Lett. A 25, 726 (1967) , “Die bildung paramagnetischer zentren längs der reichweite von protonen in silizium”, H. Lütgemeier and K. SchnitzkeA new isotropic center S2 is observed at the end of the range of photons in silicon. By etching the irradiated samples in steps of a few microns, the dependency of the production rate of the centers S1, S2, P1 and P3 was investigated. (Read more)
- 996. Phys. Rev. 155, 802 (1967) , “Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Aluminum-Vacancy Pair”, G. D. Watkins.An EPR spectrum produced in aluminum-doped silicon by 1.5-MeV electron irradiation is described. Labeled Si G9, it is identified as arising from an aluminum-vacancy pair, presumably formed when a mobile lattice vacancy is trapped by substitutional aluminum. The resonance is observed only upon... (Read more)
- 997. Sov. Phys. Solid State 8, 1842 (1967) , “REORIENTATION OF THE JAHN-TELLER DISTORTION IN NITROGEN IMPURITY CENTERS IN DIAMOND”, L. A. Shulman, I. M. Zaritskii, G. A. Podzyarei
- 998. J. Catalysis 6, 411-418 (1966) , “Radiation-induced catalytic conversions : Organic compounds adsorbed on solids of different electronic properties”, G. M. Zhabrova, V. I. Vladimirova, B. M. Kadenatsi, V. B. Kazanskii , G. B. PariiskiiThe low-temperature radiation-induced conversions of methanol and cyclohexane adsorbed on solids were investigated. The solids used were dielectrics (SiO2, silica-alumina, Al2O3, KF), semiconductors (ZnO, NiO), and metals (Pt, Pd). The samples were irradiated by γ-rays from Co60 at a dose rate... (Read more)
- 999. J. Catalysis 5, 314-324 (1966) , “ESR investigation of gas-solid interactions* The oxygen-zinc oxide system”, K.M. SancierESR measurements were combined with determinations of the amount of oxygen adsorbed or desorbed on ZnO in order to investigate the relationship between the solid state electronic properties of a semiconductor catalyst and the amounts and the nature of the adsorbed oxygen species. (Read more)
- 1000. Jpn. J. Appl. Phys. 5, 333 (1966) , “Electron Spin Resonance in SiO2 Grown on Silicon”, Y. NishiRecently there has been much interest in the behavior of space charge in SiO2 on silicon. Based on the generation and motion of charged species,structural models have been proposed by Seraphimet al. and by Revesz. In the present study electron spin resonance absorption has been... (Read more)
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