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- 801. Phys. Rev. B 23, 3920 (1981) , “Charge transfer Cr3+(3d3)?Cr2+(3d4) in chromium-doped GaAs”, G. Martinez, A. M. Hennel, W. Szuszkiewicz, M. Balkanski, B. ClerjaudResults on the absorption and electron paramagnetic resonance measurements on chromium-doped GaAs are reported. For p-type samples the main optical transitions are shown to be due to a photoionization process which has been measured as a function of temperature and hydrostatic pressure. A model,... (Read more)
- 802. Phys. Rev. Lett. 47, 954 (1981) , “Reorientation of Nitrogen in Type-Ib Diamond by Thermal Excitation and Tunneling”, C. A. J. Ammerlaan, E. A. BurgemeisterThe rate of anneal of stress-induced ordering of isolated substitutional nitrogen impurities in diamond, measured in the temperature range 78 K<T<200 K, shows large deviations from Arrhenius-type behavior. It is concluded that in the temperature range considered, reorientation of the centers... (Read more)
- 803. phys. stat. sol. (b) 108, 363 (1981) , “EPR Observation of an Au-Fe Complex in Silicon: I. Experimental Data”, R. L. Kleinhenz, Y. H. Lee, J. W. Corbett, E. G. Sieverts, S. H. Muller, C. A. J. Ammerlaan.After quenching of Au-doped FZ silicon an anisotropic axially symmetric EPR spectrum is observed. The spectrum exhibits a hyperfine interaction with 197Au nuclei (I = 3/2). In samples which were intentionally doped with isotopically enriched 57Fe (I = 1/2) an additional... (Read more)
- 804. phys. stat. sol. (b) 105, K91 (1981) , “Determination of the Zero-Field Splitting of Iron-Boron Pairs in Silicon”, W. Gehlhoff, K. H. Segsa, C. Meyer.In hte discussion of the omportant role of iron in connection with the formation of htermally induced defects in sillicon /1 to 4/ it seems to be expedient to remind of the fact that the direct detection of iron by EPR measurements is not restricted to the observation of neutral iron on a T... (Read more)
- 805. phys. stat. sol. (b) 104, K79 (1981) , “Changes in the EPR of Gold in Silicon Induced by Light”, M. Höhne, A. A. Lebedev.Since a long time gold is known as a dopant in silicon, which strongly affects recombination processes /1/ and which produces an acceptor level 0.55 eV below the conduction band (CB) and a donor level 0.33 eV above the valence band (VB) /2/. Electric and photoelectric properties were thoroughly... (Read more)
- 806. phys. stat. sol. (b) 103, 519-528 (1981) , “Investigation of the dislocation spin system in silicon as model of one-dimensional spin chains”, V. A. Grazhulis, V. V. Kveder, Yu. A. OsipyanMagnetic properties of the dislocation dangling bond (DDB) spin system in silicon crystals are investigated by means of the EPR technique at T = (1.3 to 150) K. Experimental results are obtained which enable one to develop a one-dimensional model of the spin system according to which the DDB chains... (Read more)
- 807. phys. stat. sol. (b) 103, 519 (1981) , “Investigation of the Dislocation Spin System in Silicon as Model of One-Dimensional Spin Chains”, V. A. Grazhulis, V. V. Kveder, Yu. A. Osipyan.Magnetic properties of the dislocation dangling bond (DDB) spin system in silicon crystals are investigated by means of the EPR technique at T = (1.3 to 150) K. Experimental results are obtained which enable one to develop a one-dimensional model of the spin system according to which the DDB chains... (Read more)
- 808. Solid State Commun. 40, 473-477 (1981) , “The observation of high concentrations of arsenic anti-site defects in electron irradiated n-type GaAs by X-band EPR”, N. K. Goswami, R. C. Newman and J. E. WhitehouseN-type GaAs doped with sulphur (2.8 × 1018 cm-3) has been subjected to 2 MeV electron irradiation in stages at room temperature and examined by the EPR technique. When the free carrier absorption is first eliminated no EPR signal is detected. After further irradiation, the spectrum of the As... (Read more)
- 809. Solid State Commun. 40, 285-289 (1981) , “Anion antisite defects in GaAs and GaP”, T. L. Reinecke and P. J. Lin-ChungThe electronic properties of anion antisite defects and the related ideal cation vacancies are calculated based on tight-binding Hamiltonians and using a novel recursion method. For the antisite defects symmetric A1 states are found in the upper part of the fundamental gaps, and for the ideal... (Read more)
- 810. Solid State Commun. 37, 371 (1981) , “A New EPR Center Due to Dislocations in Phosphorous Doped Silicon”, E. Weber and H. AlexanderIn plastically deformed, phosphorous doped silicon a new EPR center is found, Si-K7, which has to be ascribed to an impurity related defect in the dislocation core. From its concentration the accumulation of impurity atoms, supposedly phosphorous, in the dislocation core can be concluded. (Read more)
- 811. Sov. Phys. Solid State 23, 2126 (1981) , “Electron spin resonance of exchange-coupled vacancy pairs in hexagonal silicon carbide”, V. S. Va?ner, V. A. ll’in
- 812. J. Appl. Phys. 51, 419 (1980) , “Optically induced transient electron paramagnetic resonance phenomena in GaAs:Cr”, A. M. White, J. J. Krebs, and G. H. StaussThe dynamics of EPR spectra of the charge states of Cr in GaAs during and following optical excitation are profoundly determined by the presence of other traps. Transients are slow, nonexponential, not thermally activated, and sample dependent. We show that the instability of Cr1 + and... (Read more)
- 813. J. Appl. Phys. 51, 1484 (1980) , “The Solution of Iron in Silicon”, E. Weber, H. G. Riotte.The solution of iron in silicon has been examined by instrumental neutron activation analysis (NAA) and EPR of quenched samples. It was possible to obtain the total iron concentration and the concentration of interstitial iron for each specimen as a function of temperature. During the heat treatment... (Read more)
- 814. Phys. Rev. B 22, 921 (1980) , “Interstitial Boron in Silicon: A negative-U System”, J. R. Troxell, G. D. Watkins.An electrical level 0.45 eV below the conduction band is detected by deep-level-capacitance transient spectroscopy (DLTS) in boron-doped silicon irradiated at 4.2 K by 1.5-MeV electrons. This level is attributed to interstitial boron. Greatly enhanced annealing of the level is observed under... (Read more)
- 815. Phys. Rev. B 22, 3141 (1980) , “New EPR data and photoinduced changes in GaAs:Cr. Reinterpretation of the “second-acceptor” state as Cr4+”, G. H. Stauss, J. J. Krebs, S. H. Lee, and E. M. SwiggardSeveral samples with Fermi levels ranging from the valence to the conduction band show that the resonance previously attributed to Cr1+ is due to Cr4+, and no additional signal is observed under conditions where Cr1+ would be expected to exist. The double-acceptor... (Read more)
- 816. Phys. Rev. B 22, 2050 (1980) , “GaAs:Cr3+(3d3)—an orthorhombic Jahn-Teller center with a stress-dependent reorientation rate”, G. H. Stauss and J. J. KrebsThe Cr3+(3d3) EPR center in GaAs has been investigated using controlled uniaxial stress at temperatures from 1.8 to 4.2 K. Stresses up to 1200 kg/cm2 were applied along the [001], [111], [110], and [112] axes. The rapidity of stress alignment of the distortions at... (Read more)
- 817. Phys. Rev. Lett. 44, 1627 (1980) , “Jahn-Teller-Distorted Nitrogen Donor in Laser-Annealed Silicon”, Keith L. BrowerSubstitutional nitrogen donors in single-crystal silicon have been produced by pulsed ruby-laser annealing of amorphous silicon created by 4×1015 160-keV (0.995 28Si+ + 0.005 14N2+)/cm2. EPR measurements indicate that these... (Read more)
- 818. phys. stat. sol. (b) 99, 651 (1980) , “Electron Paramagnetic Resonance of Gold in Silicon.I. Single Atoms; Strong Nuclear Quadrupole Effect”, M. Höhne.In Si : Au rapidly quenched two centres are observed by EPR, the first of which is investigated in this paper. The spectrum is characterized by a dominating Zeeman interaction and by a nuclear quadrupole interaction large compared to the hyperfine interaction. Passage conditions depend on the... (Read more)
- 819. Solid State Commun. 36, 897-900 (1980) , “EPR measurements on chromium doped GaAs, GaP and InP”, N. K. Goswami, R. C. Newman and J. E. WhitehouseEPR measurements have been made on chromium doped GaAs samples at 4.2 K. An n-type sample doped with chromium and silicon was irradiated with 2 MeV electrons to lower the Fermi level. No resonance from substitutional Cr+ (3d5) was detected, although the Crs 2+ spectrum was observed. The generally... (Read more)
- 820. Solid State Commun. 36, 15-17 (1980) , “Submillimeter EPR evidence for the As antisite defect in GaAs”, R. J. Wagner, J. J. Krebs , G. H. Stauss , A. M. WhiteA new EPR spectrum has been observed in semi-insulating GaAs with a submillimeter laser magnetic resonance spectrometer. The spectrum is isotropic with g = 2.04 ± 0.01 at . The hyperfine interaction parameter | A | ([ = 3/2) is 0.090 ± 0.001 cm-1. The spectrum is attributed to the As... (Read more)
- 821. Sov. Phys. Semicond. 14, 1277 (1980) , “Photo-Electron Spin Resonance of K Centers in Electron Irradiated Silicon”, L. S. Vlasenko, A. A. Lebedev, V. M. Rozhkov.The ESR method was used to study photoexcited K centers in n-type silicon irradiated with 30 MeV electrons. The investigation was carried out in the temperature range 77-160ºK. It was found that the ESR spectrum of the K centers appeared in electron-irradiated n-type silicon when this material was illuminated with light of photon energy hν > 0.76 eV and it was observed for a long time after the end of illumination. The use of longer light wavelength resulted in the disappearance (quenching) of the ESR spectrum of the K centers. A study was made of the kinetics of the excitation and quenching of the ESR spectra of the K centers by photons of different energies and the spectral dependence of the photoionization cross section of the K centers was recorded. The optical and thermal ionization energies of these centers. as well as the carriercapture cross sections were determined.
- 822. J. Appl. Phys. 50, 6251 (1979) , “EPR determination of the concentration of chromium charge states in semi-insulating GaAs : Cr”, G. H. Stauss, J. J. Krebs, S. H. Lee, and E. M. SwiggardChromium can assume three different charge states in semi-insulating GaAs :Cr. An EPR-optical method is described which allows the Cr concentration in each of these states to be quantitatively determined. Typical results are given for a number of Cr-doped GaAs samples. Journal of Applied... (Read more)
- 823. J. Appl. Phys. 50, 5847-5854 (1979) , “ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafers”, P. J. Caplan, E. H. Poindexter, B. E. Deal, R. R. RazoukThe ESR Pb center has been observed in thermally oxidized single-crystal silicon wafers, and compared with oxide fixed charge Qss and oxidation-induced interface states Nst. The Pb center is found to be located... (Read more)
- 824. J. Appl. Phys. 50, 5425 (1979) , “EPR investigations of the defect chemistry of semi-insulating GaAs : Cr”, A. Goltzené, G. Poiblaud, and C. SchwabThe effects of some heat treatments under various atmospheres (vacuum, As, Ga2O3, or H2) on GaAs : Cr samples have been investigated by EPR. The equilibria between the two valence states Cr + and Cr2 + seem to depend on various parameters such... (Read more)
- 825. J. Non-Cryst. Solids 34, 339-356 (1979) , “ESR and optical absorption of cupric ion in borate glasses”, H. Hosono, H. Kawazoe and T. KanazawaESR and optical absorption of Cu2+ were measured in xNa2O(100−x)B2O3 (1 ≤ x ≤ 75), x ZnO(100−x)B2O3 (46 ≤ x ≤ 64) and x Pb(100−x)b2O3 (20 ≤ x ≤ 75) glasses, where x is expressed in mol.%. Spin hamiltonian parameters and ligand field... (Read more)
- 826. J. Non-Cryst. Solids 32, 327-338 (1979) , “ELECTRON SPIN RESONANCE AND HOPPING CONDUCTIVITY OF a-SiOx”, E. Holzenkämpfer, F. -W. Richter, J. Stuke, U. Voget-GroteAmorphous SiOx-layers with O < x < 2 have been prepared by evaporation of Si at oxygen pressures of 10−6 … 10−3 mbar. The composition of the samples was determined by proton backscattering. The band gap, derived from optical measurements, increases with rising oxygen... (Read more)
- 827. J. Non-Cryst. Solids 32, 313-326 (1979) , “OXYGEN-ASSOCIATED TRAPPED-HOLE CENTERS IN HIGH-PURITY FUSED SILICAS”, M. Stapelbroek, D. L. Griscom, E. J. Friebele and G. H. Sigel, Jr.Two distinct oxygen-associated trapped-hole centers (OHCs) are identified in samples of room-temperature γ-irradiated, high-purity fused silica. One, which we label the "wet" OHC, predominates in the high-OH-content (wet) silicas while the other, the "dry" OHC, is more... (Read more)
- 828. J. Phys. Chem. 83, 3462-3467 (1979) , “Dynamic Interchange among Three States of Phousphorus 4+ in ?-Quartz”, Y. Uchida, J. Isoya, J. A. WeilDynamic averaging due to electron jumping among three states with different sp hybrid directions in the P4+ center [PO4]0 in α-quartz has been studied by single-crystal electron paramagnetic resonance. The spin-Hamiltonian matrices g and Aslp for low temperature (i.e., C140 K) spectra P(І) and P(â…¡) and for high temperature spectrum P(A) are reported. For each crystal site, the line positions of P(A) agree well with those derived from the matrices measured for the three states. i.e., with weighted averages including P(І) and the two symmetry-related P(â…¡) spectra. (Read more)
- 829. Phys. Rev. B 20, 795 (1979) , “Effects of uniaxial stress and temperature variation on the Cr2+ center in GaAs”, J. J. Krebs and G. H. StaussThe effects both of applied uniaxial stress and of temperature variation on the EPR spectrum of Cr2+ in GaAs have been studied. The rapid stress-induced alignment of the Cr2+ centers at 4.2 K shows that the observed tetragonal symmetry is due to the Jahn-Teller effect as was... (Read more)
- 830. phys. stat. sol. (a) 55, 251 (1979) , “Photo-EPR of Dislocations in Silicon”, R. Erdmann, H. Alexander.The dependence of the EPR spectrum of dislocations in deformed silicon on illumination with monochromatic light reveals the two EPR centers Si - K1 (S < 1/2) to be different ionization states of one and the same dislocation center. The energy level separating these ionization states lies near the... (Read more)
- 831. Solid State Commun. 32, 399-401 (1979) , “Pulsed far-infrared spectroscopy of GaAs:Cr at high magnetic fields in the field-modulation mode”, R. J. Wagner and A. M. WhiteA magnetic field-modulation technique has been developed for sensitive far infrared electron paramagnetic resonance (EPR) spectroscopy on Cr2+ centers in GaAs. A hundred-fold improvement in signal-to-noise ratio relative to non-modulation techniques was obtained. The results of this experiment have... (Read more)
- 832. Solid State Commun. 32, 205-208 (1979) , “The origin of sharp near infrared transitions in chromium doped III–V semiconductors”, A. M. WhiteIt is contended that the sharp emission and absorption lines seen in GaAs:Cr and GaP:Cr at 0.839 eV and 1.029 eV are due to a type of excitonic recombination at isoelectronic sites involving chromium. This assignment contrasts strongly with the widely accepted model involving an internal d-d... (Read more)
- 833. Solid State Commun. 30, 211 (1979) , “IMAGING OF PARAMAGNETIC CENTRES IN DIAMOND”, M. J. R. Hoch and A. R. DayAn imaging method for determining the spatial distribution of paramagnetic nitrogen centres in diamond is described. Results are presented for a sample consisting of two small type IB diamonds. (Read more)
- 834. Sov. Phys. Solid State 21, 1852 (1979) , “Nature of paramagnetic centers in iron-doped GaAs and GaP”, V. I. Kirillov , V. V. Teslenko
- 835. Surf. Sci. 82, 102-108 (1979) , “Structure of IlI–V compound (110) surface regions from EPR data and elastic energy minimisation calculations”, D. J. Miller and D. HanemanThe structure of the first several layers of the (110) surfaces of GaAs, AlSb and GaP are obtained by two methods. In the first, electron paramagnetic resonance data is combined with bond orbital considerations to yield first layer reconstructions. In the second method, the surface energy is... (Read more)
- 836. Thermochim. Acta 29, 247-252 (1979) , “Combined EPR and TG techniques : comparison of the thermal reduction of chromium (VI) ions in some zinc chromates and chromate-oxalate mixtures*1”, Z. Gabelica , E. G. DerouaneR. HubinLower oxydation state chromium species which are successively formed and stabilized upon thermal reduction of chromate (VI) ions, are studied by combined EPR and TG-techniques.The spontaneous oxygen release occuring during the vacuum thermal treatment of some zinc chromates leads to the formation of... (Read more)
- 837. J. Appl. Phys. 49, 2401-2406 (1978) , “Resistance changes induced by electron-spin resonance in ion-implanted Si : P system”, K. Murakami, S. Namba, N. Kishimoto, K. Masuda, K. GamoThe ESR-induced changes in the dc resistance, /||ESR, of P-ion-implanted silicon have been observed for the first time. The transfer of absorbed Zeeman energy at liquid-He temperature has been investigated. The /||ESR signals observed were a narrow line with a g value of... (Read more)
- 838. J. Vac. Sci. Technol. 15, 1298-1310 (1978) , “Reactions of oxygen with ZnO–100-surfaces”, W. GöpelInvestigations are reported on the reaction of oxygen with electrostatic neutral ZnO100-surfaces studied by means of AES, LEED, EPR, thermal desorption spectroscopy, and isotopic exchange as well as changes in the surface conductivity and work function. Geometric and electronic structures of... (Read more)
- 839. J. Vac. Sci. Technol. 15, 1267 (1978) , “Wave functions and (110) surface structure of III–V compounds”, D. J. Miller and D. HanemanNew electron paramagnetic resonance determinations of the dangling orbital on Ga atoms on the cleavage surfaces of GaP are compared with corresponding data for GaAs and A1Sb. Using a bond-orbital approach the (110) surface structure for all three compounds is reconstructed, with the surface cation... (Read more)
- 840. Phys. Rev. B 18, 6834 (1978) , “Divacancy in Silicon: Hyperfine Interactions from Electron-Nuclear Double-Resonance Measurements. II”, E. G. Sieverts, S. H. Muller, and C. A. J. AmmerlaanThe Si-G7 EPR spectrum, which is attributed to the negative charge state of the divacancy in silicon, was investigated by electron-nuclear double resonance. Hyperfine interactions between the unpaired defect electron and various 29Si nuclei were determined to obtain detailed information... (Read more)
- 841. Phys. Rev. B 17, 4130 (1978) , “Erratum: EPR of a Jahn-Teller Distorted <111> Carbon Interstitialcy in Irradiated Silicon [Phys. Rev. B 9, 2607 (1974)]”, K. L. Brower.Due to a computational error, the numbers in table â…¢ are incorrect: the corrected Table â…¢ is listed below: (Read more)
- 842. Phys. Rev. B 17, 2081 (1978) , “ESR of the doubly ionized Cr acceptor and infrared luminescence of Cr in GaP:Cr”, U. Kaufmann and W. H. KoschelAfter optical excitation a broad isotropic electron-spin-resonance (ESR) signal with g=1.999 has been observed in chromium-doped GaP. It is attributed to an isolated Cr+ (3d5) center, presumably on a Ga site, which may be viewed as the doubly ionized Cr acceptor. The low-energy... (Read more)
- 843. phys. stat. sol. (a) 50, 237 (1978) , “High-Temperature Ion Implantation in Diamond”, Y. H. Lee, P. R. Brosious, J. W. CorbettC+ and N+ implantation into type IIa diamond are performed at various temperatures (25 to 1000°C) and ion-induced damage is studied by EPR measurements at 1.2 to 300 K. Hot implantation at 1000°C results in a reduced spin density of “amorphous†carbon by an order of... (Read more)
- 844. phys. stat. sol. (b) 90, 301 (1978) , “ESR from Boron in Silicon at Zero and Small External Stress II..Linewidth and Crystal Defects”, H. Neubrand.Observations of the ESR lineshape of the shallow acceptor centre B in silicon at zero external stress are reported. The broadening of two ∆M = 1 transitions can be well fitted by a Voigt profile. The Lorentzian part of the fit is shown to behave in full accordance with the theory of strain... (Read more)
- 845. phys. stat. sol. (b) 86, 269 (1978) , “ESR from Boron in Silicon at Zero and Small External Stress I.. Line Positions and Line Structure”, H. Neubrand.ESR observations at zero external stress of the shallow acceptor centre boron in silicon are reported for the first time. These observations have become possible by the high degree of crystal perfection attainable today in Si-crystal growth. The spectrum, its angular and uniaxial pressure dependence... (Read more)
- 846. phys. stat. sol. (b) 86, 119 (1978) , “Nonrandom Strain in "crushed" silicon. EPR of thermally excited lithium donors”, M. Höhne.Si:Li single crystals with crushed surface layers are investigated by EPR. Measurements at 1.5 K show that these layers, which contain in the outer part also the dangling bond centre with g = 2.0055, nearly preserve their crystalline order, but exhibit strains preferentially perpendicular to the... (Read more)
- 847. phys. stat. sol. (b) 85, 525 (1978) , “EPR of Lithium in Mechanically Affected Silicon”, M. Höhne.An intense narrow EPR spectrum is observed at 20 and 1.5 K in lithium doped silicon, which has been mechanically affected. The spectrum exhibits an angular dependent, only partly resolved structure. The spectra at the different temperatures can be explained by assuming lithium donors in rhombic... (Read more)
- 848. Solid State Commun. 28, 221 (1978) , “On the Production of Paramagnetic Defects in Silicon by Electron Irradiation”, E. G. Sieverts, S. H. Muller and C. A. J. AmmerlaanMonocrystalline silicon samples of different impurity contents have been irradiated with 1.5 MeV electrons in order to produce divacancies in their negative charge state. In these samples different combinations of defects have been observed with electron paramagnetic resonance. The conditions for... (Read more)
- 849. Solid State Commun. 27, 867 (1978) , “Localization of the Fe0-Level in Silicon”, H. Feichtinger, J. Waltl and A. GschwandtnerSilicon samples were quenched from 1250°C – 1300°C and the 95K Fermi level was calculated from Hall effect data. The same samples were used to determine the intensity of the EPR spectrum at 95K associated with the iron interstitial (Fe°). In carefully selected samples, complete or... (Read more)
- 850. Solid State Commun. 26, 779-781 (1978) , “Motional effects in the EPR-spectrum of Cu-H-centers in ZnO”, D. ZwingelAt low temperatures, the EPR signal of a Cu2+ center is observed in ZnO single crystals doped both with copper and hydrogen. A clear effect of line narrowing on the copper hfs-lines is observed at T=16K. It is discussed in the model of a Cu-(OH) complex taking into account the thermally induced... (Read more)
- 851. Solid State Commun. 26, 255 (1978) , “EPR STUDIES OF A TWO-NITROGEN-ATOM CENTRE IN NATURAL, PLASTICALLY-DEFORMED DIAMOND”, C. M. WelbournThe hyperfine structure of an EPR system in a natural, brown diamond implies that the system is due to a centre containing two nitrogen atoms on almost equivalent sites. X-ray topographic evidence shows that the sample has been plastically deformed and it is suggested that a possible model for the... (Read more)
- 852. Solid State Commun. 25, 987 (1978) , “EPR Spectra of Heat-Treatment Centers in Oxygen-Rich Silicon”, S. H. Muller, M. Sprenger, E. G. Sieverts and C. A. J. AmmerlaanAfter heat-treatment of oxygen-rich silicon at 410–550 °C ten different EPR spectra were observed. Nine of these are new spectra, seven of them reveal 2mm symmetry for the corresponding heat-treatment center, thereby reducing considerably the number of possible atomic configurations. In... (Read more)
- 853. Solid State Commun. 25, 77-80 (1978) , “Exchange broadened, optically detected ESR spectra for luminescent donor-acceptor pairs in Li doped ZnO”, R. T. Cox, D. Block, A. Hervé, R. Picard and C. SantierR. HelbigApplication of optically detected ESR to the yellow photoluminescence of Li doped ZnO gives ESR spectra for shallow donor - lithium acceptor pairs, showing that at least a fraction of the yellow emission is donor-acceptor (D-A) luminescence. The distribution of separations rDA gives a spectrum of... (Read more)
- 854. Solid State Commun. 25, 1113-1116 (1978) , “ESR assessment of 3d7 transition metal impurity states in GaP, GaAs and InP”, U. Kaufmann , J. SchneiderPhoto-sensitive electron spin resonance of the 3d7-ions Fe+, Co2+, Ni3+ has been detected and analysed in GaP, GaAs and InP. For GaP : Ni3+, hyperfine interaction with the four nearest P31-ligands could be resolved. (Read more)
- 855. Sov. Phys. Solid State 20, 178 (1978) , “Influence of temperature on spin-spin interaction of nitrogen and nickel centers in diamond”, V. K. Bezobchuk, A. B. Brik, I. V. Matyash, Yu. V. Fedotov
- 856. Surf. Sci. 75, 681-688 (1978) , “EPR centres at a gas-solid interface induced by a microwave gas plasma”, B. P. Lemke and D. HanemanDetails are reported for EPR centres induced in various samples after operating a cyclotron resonance type gas discharge inside a vacuum envelope within a microwave cavity. In the case of vacuum crushed GaAs, centres identified as O−3 were induced on the surfaces at 100 K. The powder... (Read more)
- 857. Appl. Phys. Lett. 31, 142 (1977) , “EPR of a Thermally Induced Defect in Silicon”, Y. H. Lee, R. L. Kleinhenz, and J. W. CorbettTwo EPR spectra are resolved in quenched silicon; one is attributed to a surface damage formed during the quench and the other to the interstitial iron (Fe0) previously identified by Woodbury and Ludwig in Fe-diffused silicon. The enthalpy and entropy for the Fe0 formation are... (Read more)
- 858. Phys. Lett. A 60, 55 (1977) , “Oxygen-vibrational bands in irradiated silicon*1”, Y. H. Lee, J. C. Corelli, J. W. Corbett.A correlation is made between the EPR spectra and the IR absorption bands for the known multivacancy-oxygen complexes in irradiated silicon. (Read more)
- 859. Phys. Lett. A 60, 355-357 (1977) , “Hyperfine structure in the EPR spectrum of O−2 on GaAs surfaces”, D. J. Miller , D. HanemanIt is shown that a previous interpretation of hyperfine structure in the O−2 — GaAs surface EPR spectrum is incorrect. The experimental spectrum is reproduced and re-interpreted in a consistent way. The surface Ga orbital is almost entirely p-like. (Read more)
- 860. Phys. Rev. B 16, 974 (1977) , “EPR study of Fe3+ and Cr2+ in InP”, G. H. Stauss, J. J. Krebs, and R. L. HenryAt 4.5 K, Fe3+ (3d5) displays a cubic-symmetry EPR spectrum in InP similar to that in related III-V semiconductors, with parameters g=2.0235(10) and a=+221(2)×10-4 cm-1. Optical transitions near 0.75 and 1.13 eV produce transient decreases in the... (Read more)
- 861. Phys. Rev. B 16, 971 (1977) , “EPR of Cr2+ (3d4) in gallium arsenide: Jahn-Teller distortion and photoinduced charge conversion”, J. J. Krebs and G. H. StaussThe spin-Hamiltonian parameters and low-temperature behavior of Cr2+ in GaAs are found to correspond closely to those in II-VI zinc-blende compounds, suggesting the occurrence of a static Jahn-Teller distortion. Observation of photoinduced charge conversion among Cr2+,... (Read more)
- 862. Phys. Rev. B 15, 816 (1977) , “Optical detection of conduction-electron spin resonance in GaAs, Ga1-xInxAs, and Ga1-xAlxAs”, Claude Weisbuch and Claudine HermannThe optical detection of conduction-electron spin resonance (CESR) is performed in GaAs, Ga1-xInxAs, and Ga1-xAlxAs alloys. The measured g factor of GaAs is g*=-0.44±0.02. The good precision obtained permits a fruitful comparison with theory.... (Read more)
- 863. Phys. Rev. B 15, 17 (1977) , “EPR of Cr(3d3) in GaAs—evidence for strong Jahn-Teller effects”, J. J. Krebs and G. H. StaussThe X-band EPR spectrum of Cr3+(3d3) has been observed in semi-insulating Cr-doped GaAs at 5 K. The Cr is assumed to be substitutional for Ga. The S=3 / 2 center has an orthorhombic (C2ν) symmetry spin Hamiltonian... (Read more)
- 864. phys. stat. sol. (a) 41, K21 (1977) , “Anisotropic Broadening of Linewidth in the EPR Spectrum of Fe0 in Silicon”, W. Gehlhoff, K. H. Segsa.Measurements of temperature dependances of the Hall coefficient and resistivity in iron doped sillicon crystals slow that iron acts as a donor impurity, introducing a converts to a donor level 0.4 eV from the valence band. This level is unstable at room temperature and converts to a donor level 0.55... (Read more)
- 865. Radiation Effects in Semiconductors 31, 266-271 (1977) , Institute of Physics, Bristol , “Electron Paramagnetic Resonance of Point Defects in Deformed Silicon”, E. Weber, H. Alexander.
- 866. Radiation Effects in Semiconductors 31, 213-220 (1977) , Institute of Physics, Bristol , “Electron Paramagnetic Resonance of New Defects in Heavily Phosphorus-Doped Silicon after Electron Irradiation”, E. G. Sieverts, C. A. J. Ammerlaan.
- 867. Radiation Effects in Semiconductors 31, 174-185 (1977) , Institute of Physics, Bristol , “Heavy-Dose Ion Implantation”, K. Masuda.
- 868. Rev. Sci. Instrum. 48, 135-141 (1977) , “EPR Techniques for Studying Defects in Silicon”, K. L. Brower.Due to long spin-lattice relaxation times and low defect concentrations, the EPR study of defects in irradiated silicon requires special experimental capabilities. The superheterodyne spectrometer described in this paper, which has been used in numerous defect studies, can detect 1010... (Read more)
- 869. Solid State Commun. 22, 767 (1977) , “ESR STUDIES OF DIAMOND POWDERS”, J. H. N. LoubserThe ESR spectrum of two defect centres were observed in finely ground diamond powders (0.5 to 30 μm size). The one centre has been seen before in irradiated and annealed single crystals of natural diamonds (the O1 centre) while the second one has only been seen in synthetic diamonds grown from... (Read more)
- 870. Sov. Phys. Semicond. 11, 426 (1977) , “Magnetic and optical properties of Ni3+ and Co2+ ions of 3d7 configuration in gallium arsenide”, D. G. Andrianov, N. I. Suchkova, A. S. Savel'ev, E. P. Rashevskaya, M. A. Filippov
- 871. Sov. Phys. Solid State 19, 100 (1977) , “Impurity states of iron group ions in gallium arsenide and silicon”, E. S. Demidov
- 872. Appl. Phys. Lett. 29, 265 (1976) , “EPR Evidence for a Positively Charged Vacancy-Oxygen Defect in Silicon”, Paul R. BrosiousA new EPR spectrum, labeled Si-I3, has been observed in electron-irradiated n-type Czochralski silicon illuminated with approximately band-gap light. The g-tensor symmetry, the g shifts from the free-electron value, and the temperature dependence of the spectrum amplitude lead to the... (Read more)
- 873. J. Lumin. 12-13, 441-445 (1976) , “ESR and luminescence of trapped hole centers in ZnO and SnO2”, E. Mollwo , D. ZwingelIn SnO2 single crystals acceptor centers are found upon incorporation of Al3+ and Ga3+ ions at cation sites. After UV-excitation, holes, trapped at these centers, give rise to polarized luminescence and thermoluminescence. The structure of the centers is analysed by ESR and compared with similar... (Read more)
- 874. J. Magn. Res. 21, 387 (1976) , “The Divacancy in Silicon: Spin-Lattice Relaxation and Passage Effects in Electron Paramagnetic Resonance”, C. A. J. Ammerlaan, A. van der Wiel.The longitudinal spin-lattice relaxation time T1 of the divacancy in silicon, in its positively charged state, was determined in the temperature region between 10 and 30 K. The study was made by measuring the line shape and amplitude of the electron paramagnetic resonance spectrum of V+2 (the Si-G6 spectrum) in a static magnetic field of 8.24 kOe. the passage conditions in observing the resonances were varied through the transition from adiabatic fast (ωmT1 > 1) to adiabatic slow (ωmT1 < 1) with respect to the audiofrequency (ωm) modulation field. Explicit formulas are derived to describe line shape and amplitude of the resonance in the transition region around ωmT1 = 1. The spin-lattice relaxation time found is given by T1(s) = 3.4 × 105 × T(K)-6.6, which demonstrates that the Raman two-phonon process is the active relaxation mechanism..
- 875. J. Phys. Soc. Jpn. 41, 711 (1976) , “Electron Spin Relaxation Time of Phosphorus-Doped Silicon”, H. Nagashima, H. Yamazaki.The decay time of induced magnetization Mz of donor electrons is observed for (Si:P) samples having impurity concentrations 5.6×1017 ≤ Nd 2.7×1018 donors / cm3 in the 1.2-4.2 K temperature range. The results show that the spin-lattice relaxation time T1 increases with increasing donor concentration and becomes so close to the spin-spin relaxation time T2 in the intermediate concentration region of transport phenomena. (Read more)
- 876. Phys. Lett. A 59, 238 (1976) , “An EPR study of optical absorption of the oxygen-vacancy pair in electron-irradiated silicon*1”, Y. H. Lee, J. C. Corelli, J. W. Corbett.The negative charge state of the vacancy-oxygen pair (Si-B1) in irradiated silicon was populated by illumination with polarized light, from which the direction of the electric dipole moment was determined to be near 110 perpendicular to the (Si-O-Si) bond axis. Energy dependence of the alignment... (Read more)
- 877. Phys. Rev. B 14, 872-883 (1976) , “EPR of a <001> Si interstitial complex in irradiated silicon”, K. L. Brower.This paper deals with an electron-paramagnetic-resonance study of the Si-B3 center, which was first reported by Daly. The Si-B3 center is a secondary defect which forms upon annealing between 50 and 175°C in irradiated boron-doped silicon and is stable up to ?500°C. Our studies indicate that the... (Read more)
- 878. Phys. Rev. B 14, 4506 (1976) , “EPR study of neutron-irradiated silicon: A positive charge state of the <100> split di-interstitial”, Young-Hoon Lee, Nikolai N. Gerasimenko, and James W. CorbettThe Si-P6 spectrum shows an intrinsic tetragonal symmetry with the C2 axis along ?100? and distortion forces the principal axes of the g tensor to be displaced in the {100} plane. The g tensor previously identified by Jung and Newell was found to be due to the motionally averaged state... (Read more)
- 879. Phys. Rev. B 14, 3494 (1976) , “Divacancy in Silicon: Hyperfine Interactions from Electron-Nuclear Double Resonance Measurements”, J. G. de Wit, E. G. Sieverts, and C. A. J. AmmerlaanThe Si-G6 EPR spectrum, which is associated with the positive charge state of the divacancy in silicon, was investigated by electron-nuclear double resonance. Hyperfine tensors describing the interaction between the unpaired divacancy electron and 29Si nuclei were determined. With these... (Read more)
- 880. Phys. Rev. B 13, 2653 (1976) , “EPR Studies of Defects in Electron-Irradiated Silicon: A Triplet State of Vacancy-Oxygen Complexes”, Young-Hoon Lee and James W. CorbettThree new EPR spectra (Si-A 14, -A 15, and -A 16) and two previously known spectra (Si-P2 and -P4) are observed for the first time in electron-irradiated silicon. The microscopic defect models are established as multivacancy-oxygen complexes with the oxygen(s) in Si-O-Si structure inside the ... (Read more)
- 881. Phys. Rev. B 13, 2511 (1976) , “EPR of a Trapped Vacancy in Boron-Doped Silicon”, G. D. Watkins.An S=1/2 EPR spectrum, labeled Si-G10, is tentatively identified as a lattice vacancy trapped by substitutional boron in silicon. It is produced in boron-doped vacuum floating-zone silicon by 1.5-MeV-electron irradiation at 20.4 K followed by an anneal at ? 180 K, where the isolated vacancy... (Read more)
- 882. Radiat. Eff. 29, 7 (1976) , “Photo-EPR Experiments on Defects in Irradiated Silicon”, Y. H. Lee, T. D. Bilash, J. W. Corbett.The defect electrical levels for eight EPR spectra (Si-A10, -A14, -A15, -A16, -G7, -G16, -P2, -P4) are determined from optical bleaching experiments via electron paramagnetic resonance. The defect energy levels are all located near the middle of the band gap in between Ec ï¼0.40 eV and Ev +0.40 eV.
- 883. Solid State Commun. 20, 881 (1976) , “ESR in Iron Doped Silicon Crystals under Stress”, M. Berke, E. Weber and H. AlexanderH. Luft and B. ElschnerThe spin lattice coefficients C11 and C44 characterizing the crystal field under stress are measured for neutral iron at interstitial sites in silicon. The coefficients are one order of magnitude larger than for Fe3+ in MgO. Both C11 and C44 turn out to be negative. (Read more)
- 884. Solid State Commun. 20, 143-146 (1976) , “Deep traps in semi-insulating GaAs: Cr revealed by photo-sensitive ESR”, U. Kaufmann and J. SchneiderThe Cr+ ESR spectrum has been observed in GaAs: Cr after near i.r. excitation. The ESR photo-excitation and quenching spectra are used to establish a model for the Cr centers which is consistent with photoconductivity, photo-thermopower, and photocapacitance studies as well as with optical... (Read more)
- 885. Solid-State Electronics 19, 611 (1976) , “Thermal Emission Rates and Activation Energies of Electrons at Tantalum Centers in Silicon”, Kenji Miyata and C. T. SahThe thermal emission rates and activation energies of electrons trapped at the two Ta donor centers in n-type silicon are determined from transient capacitance measurements on Schottky barrier diodes made on phosphorus and tantalum doubly doped silicon crystals. The thermal activation energies are... (Read more)
- 886. Sov. Phys. Semicond. 10, 899 (1976) , “Influence of the potential relief in gallium arsenide on optical charging of paramagnetic centers”, D. P. Erchak, V. F. Stel'makh, V. D. Tkachev, G. G. Fedoruk
- 887. Sov. Phys. Semicond. 10, 637 (1976) , “Influence of oxygen on properties of gallium arsenide doped with transition metals”, D. G. Andrianov, É. M. Omel'yanovski?, E. P. Rashevskaya, N. I. Suchkova
- 888. Sov. Phys. Semicond. 10, 1339 (1976) , “Radiation Damage in Silicon Resulting from Complete Stopping of 30 MeV Protons”, Yu. V. Gorelkinski?, V. O. Sigle, V. A. Botvin.The ESR method was usedin a study of radiation defects created in single-crystal silicon by 30 MeV protons. The distribution of the paramagnetic centers was determined as a function of the proton energy between 30 and ~10 MeV. It was established that in this range of energies the rates of introduction of centers with high (~10 keV) and low (~100 eV) threshold energies of formation were independent of the proton energy. The structure of the radiation damage was determined by investigating the ESR spectra of samples with high phosphorus concentrations (~1017ï¼1018 cm-3) after irradiation with various proton doses. For comparison, measurements were made also on silicon samples irradiated with fast reactor neutrons. The probabilities of formation of disordered regions by recoil nuclei of energies exceeding ~10 keV were approximately equal in the proton (30 MeV) and neutron irradiation cases. However, when silicon was bombarded with protons, about 80% of the divacancies (Si-G7 centers) formfed were located outside the disordered regions.
- 889. Sov. Phys. Solid State 18, 190 (1976) , “EPR of Phosphorus in Silicon”, P. Swarup, P. L. Trivedi.Experimental values of the exchange integral are presented for phosphorus-doped silicon, at various phosphorus concentration, and are compared with the theory. It is shown that the observed temperature dependence of the EPR linewidth in these samples can be attributed to a phonon-induced admixture of excited states to the ground state of the impurity center. The proposed mechanism is compared with the mechanism of dynamic narrowing due to hopping. We have analyzed the EPR spectra of silicon single crystals doped with phosphorus in the concentration range from 2・1017 to 2・1018 cmï¼3, at temperatures from 2º to 20ºK.1 It was observed that the EPR line of phosphorus has a Lorentz shape at all concentrations and temperatures. Estimates of the exchange integrals at various impurity concentrations were obtained from the experimental data on the EPR linewidth. It is shown that the temperature dependence of the linewidth confirms the conclusion that an admixture of excited orbital states of the impurity centers to the ground state is induced by the phonons and that the exchange integral depends on temperature. The proposed mechanism is compared with the mechanism of dynamic narow connected with hopping.2
- 890. Sov. Phys. Solid State 18, 1883 (1976) , “Spin-lattice relaxation of a Jahn-Teller nitrogen center in diamond”, I. M. Zaritskii, V. Ya. Bratus’, V. S. Vikhnin, A. S. Vishnevskii, A. A. Konchits, V. M. Ustintsev
- 891. Z. Physik B 23, 171-181 (1976) , “Intrinsic Defects in Electron Irradiated Zinc Oxide”, B. Schallenberge, A. Hausmann
- 892. Jpn. J. Appl. Phys. 14, 544 (1975) , “Study of Defects Introduced by Ion Implantation in Diamond”, J. -F. Morhange, R. Beserman, J. C. BourgoinNatural type IIa diamonds have been implanted with 70 keV carbon, nitrogen and boron ions. The behaviour of the defects introduced is monitored using electron paramagnetic resonance, absorption, luminescence and Raman scattering measurements. We first describe and discuss the applicability of these... (Read more)
- 893. Lattice Defects in Semiconductors 23, 433-438 (1975) , Institute of Physics, London , “The EPR Spectra in Silicon with Dislocations”, H. Alexander, M. Kenn, B. Nordhofen, E. Weber.Plastic deformation introducing about 109cmï¼2 dislocations in silicon gives rise to a complex EPR signal. It consists of a group of central lines around g = 2 and a zero field splitting multiplet of 14 pairs of lines. At low temperature (≤30 K) the g tensor of the four most prominent central lines was determined. The lines belong to the same (broken bond type) centre Si-K1 in diffeerent orientations. The axes of this centre are oriented in an unusual manner. beginning at 60 K additional central lines appear, one of which can be ascribed to the existence of dangling bonds normal to the glide plane of the dislocations. The fine structure multiplet is due to a centre (Si-K2) with its g axes parallel to [011],[011],[100];[011] is the direction of the Burgers vector of most of the dislocations and the axis of a nearly axially symmetric D tensor. The splitting parameter changes strongly with temperature between 60 K and 225 K, where the multiplet disappears. Possible causes for the splitting are discussed.
- 894. Lattice Defects in Semiconductors 23, 126-148 (1975) , Institute of Physics, London , “Lattice Defects in Ion-Implanted Semiconductors”, L. C. Kimerling, J. M. Poate.This paper summerizes the current status of ion implantation damage research in semiconductors. We have attempted to review the recent interesting measurements and theories. the damage process is traced from the production mechanism to the structural and electrical properties of the defects and their annealing characteristics. Defect-impurity interactions and lattice site location of the implanted ion are discussed. New areas of research such as enhanced diffusion, gettering and mixing phenomena are discussed.
- 895. Lattice Defects in Semiconductors 23, 1-22 (1975) , Institute of Physics, London , “EPR Studies of the Lattice Vacancy and Low-Temperature Damage Processes in Silocon”, G. D. Watkins.EPR studies of silicon irradiated at 20.4 K and 4.2 K by 1.5 MeV and 46 MeV electrons are described. In 46 MeV irradiations the dominant defects formed appear to be divavancies and other multiple defect aggregates which liberate vacancies throughout the anneal to room temperature as they reorder, recombine, etc. For 1.5 MeV irradiations group III atoms play a vital role in p- and n-type materials in trapping interstitials and stabilizing damage. Carbon and oxygen are not effective interstitial traps at these temperatures. Evidence of limited vacancy migration during irradiation is also cited. Two distinct excited configurations of vacancy-oxygen pairs are identified as precursors to A-centre formation in n-type silicon. The kinetics for their conversion to A-centres depends strongly upon the Fermi level as does the isolated vacancy migration energy whhich is measured to be 0.18 ± 0.02 eV for the Vï¼ charge state. The vacancy has four charge states, V+, V0, Vï¼ and Vï¼. Kinetics for hole release from V+ reveals an activation barrier of 0.057 eV. The concentration of V+ at 20.4 K in boron-doped material indicates the corresponding donor level even closer to the band edge, approximately EV + 0.039 eV. Jahn-Teller energies for V0, V+, and Vï¼ are estimated from stress-alignment studies and confirmed to be large. Kinetics studies for reorientation from one Jahn-Teller distortion to another are also described for each charge state.
- 896. Phys. Rev. B 12, 5824 (1975) , “Defects in Irradiated Silicon: EPR and Electron-Nuclear Double Resonance of Interstitial Boron”, G. D. Watkins.An EPR spectrum, labeled Si-G28, is identified as arising from neutral interstitial boron in silicon. It is produced by 1.5-MeV electron irradiation at 20.4°K, presumably when a substitutional boron atom traps a mobile interstitial silicon atom which is produced in the original damage event. Three... (Read more)
- 897. Phys. Rev. B 12, 4383 (1975) , “Defects in Irradiated Silicon: EPR of the Tin-Vacancy Pair”, G. D. Watkins.An EPR spectrum, labeled Si-G29, is identified as a lattice vacancy trapped by substitutional tin. The resulting tin-vacancy pair is observed in its neutral ground state with S=1. Studies versus wavelength of illumination indicate that it has a donor level at ?Ev+0.35 eV. Analysis of the... (Read more)
- 898. Solid State Commun. 16, 171 (1975) , “On the Role of Defect Charge State in the Stability of Point Defects in Silicon”, L. C. Kimerling, H. M. DeAngelis, J. W. Diebold.Defect annealing in 1-MeV electron-irradiated, phosphorus-doped silicon is studied. Charge state effects are explored directly using a p-n junction structure. A defect state which is associated with the E center (phosphorus-vacancy pair) is found to disappear at approximately 150°C with an... (Read more)
- 899. Sov. Phys. JETP 42, 1073 (1975) , “ESR and Spin Relaxation of Deep Centers in Semiconductors in the Presence of Photoelectrons (Si:Fe0)”, M. F. De?gen, V. Ya. Bratus, B. E. Vugme?ster, I. M. Zaritski?, A. A. Zolotukhin, A. A. Konchits, L. S. Milevski?.An investigation was made of the influence of photoelectrons on the ESR and spin relaxation of deep centers in semiconductors in the specific case of Si:Fe0. It was established that the appearance of conduction electrons generatd by optical illumination reduced the ESR signal intensity and gave rise to photoelectron-stimulated spectral diffusion in an inhomogeneously broadened ESR line of Fe0.Heating photoelectronsby an electric field resulted in a further reduction in the ESR signal of Fe0 because of an increase in the effective temperature of the photoelectrons. The observed behavior was explained by exchange scattering of photoelectrons on Fe0 center. Allowance for photoelectron recombination process made it possible to explain the reduction in the ESR signal whhich occurred as a result of optical illumination. A new mechanism of spectral diffusion in inhomogeneously broadened ESR lines was suggested: this diffusion was due to double exchange scattering of carriers by paramagnetic centers. A comparison of the theory with experiment yielded the cross section for the exchange scattering of electrons by Fe0 impurities and the dependence of the spin-lattice relaxation time of hot photoelectrons on their effective temperature.
- 900. Sov. Phys. Semicond. 9, 1303 (1975) , “Characteristics of Radiation Damage in Silicon Bombarded with U235 Fission Fragments”, Zh. S. Takibaev, Yu. V. Gorelkinskii, V. F. Grishchenko, N. N. Gerasimenko.the ESR method was used in a study of the properties of radiation defects in silicon bombarded with U235 fission fragments. The source of these fragments was uranium dioxide irradiated, together with silicon, by reactor neutrons. It was established that the main defects generated by fission fragments were tetravacancies (called Si-P3 centers) and centers associated with amorphization (VV centers). An analysis of the distribution function of the concentration of paramagnetic centers demonstrated that individual fission fragments were capable of creating point defects in densities sufficient for the formation of an isolated amorphous region in Si. A continuous amorphous layer near the surface of an Si crystal was observed when the fission fragment density was ~1015cmï¼2. An estimate was obtained of the rate of introduction of paramagnetic centers whose average value was ~104cmï¼1 per fragment. The ESR signal disappeared completely after annealing at ~600℃.
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