Showing
10, 25, 50, 100, 500, 1000, all papers per page.
Sort by:
last publication date,
older publication date,
last update date.
- 601. Sov. Phys. Solid State 32, 1292 (1990) , “Relationship between a Combined Resonance in Plastically Deformed n-Type Silicon with a Dislocation Structure”, V. V. Kveder, T. R. Mchedlidze, Yu. A. Osip’yan, A. I. Shalynin.
- 602. Vacuum 41, 1633-1635 (1990) , “Characterization of defects on ZnO and Ru---ZnO: a structural, TPD, and spectroscopic study”, M. G. CattaniaP. d'AntonaF. Morazzoni and R. ScottiSurface and bulk defects in ZnO were recognized as interstitial zinc atoms and surface oxygen vacancies (V0)s by means of XRD, SEM, TPD and ESR measurements. Dispersion of ruthenium at the ZnO surface induces an electron transfer from ZnO defects to the metal as revealed by ESR and XPS spectroscopy. (Read more)
- 603. Appl. Phys. Lett. 54, 1881 (1989) , “Structural properties of As-rich GaAs grown by molecular beam epitaxy at low temperatures”, M. Kaminska, Z. Liliental-Weber, E. R. Weber, T. George, J. B. Kortright, F. W. Smith, B-Y. Tsaur, A. R. CalawaGaAs layers grown by molecular beam epitaxy (MBE) at substrate temperatures between 200 and 300 °C were studied using transmission electron microscopy (TEM), x-ray diffraction, and electron paramagnetic resonance (EPR) techniques. High-resolution TEM cross-sectional images showed a high degree... (Read more)
- 604. Appl. Surf. Sci. 39, 392 (1989) , “THE NATURE OF THE DOMINANT DEEP TRAP IN AMORPHOUS SILICON NITRIDE FILMS: EVIDENCE FOR A NEGATIVE CORRELATION ENERGY”, P. M. Lenahan and D. T. KrickJ. KanickiA recent study by Krick and coworkers provided the first direct evidence associating a specific point-defect with trapping phenomena in silicon nitride films. Krick and coworkers demonstrated that silicon “dangling bond” centers in silicon nitride films are electrically neutral when... (Read more)
- 605. Chin. Phys. 9, 976 (1989) , “Photoquenching of electronic paramagnetic resonance "AsGa" and metastable mechanism of EL2 defect in GaAs”, Zou Yuan-xi , Wang Guang-yu
- 606. J. Appl. Phys. 66, 780 (1989) , “P-Rich Si Particles in Separation by Implanted Oxygen Structures Revealed by Low-Temperature Electron-Spin Resonance”, G. Van Gorp and A. StesmansLow-temperature X- and K-band electron-spin-resonance measurements on separation by implanted oxygen structures formed by implanting oxygen to a dose 1.7×1018 cm2 on [001] c-Si wafersboth n and p type [dopant concentration... (Read more)
- 607. J. Appl. Phys. 66, 4529 (1989) , “Electron spin resonance in electron-irradiated 3C-SiC”, Hisayoshi Itoh, Naohiro Hayakawa, Isamu Nashiyama, Eiichiro SakumaElectron-irradiation-induced defects in epitaxially grown 3C-SiC crystals have been studied by electron-spin-resonance (ESR) measurements. The results indicate the presence of an isotropic ESR center that consists of five lines equally spaced at about 1.5 G and has a g value of... (Read more)
- 608. J. Chem. Phys. 91, 69 (1989) , “Laser vaporization generation of 69Ga31P+ and 71Ga31P+ for neon matrix electron spin resonance studies: Electronic structure comparison with GaAs+ ”, Lon. B. Knight, Jr. and John O. HerlongThe 69GaP + and 71GaP + molecular ions have been generated by the combined methods of photoionization/laser vaporization for trapping in neon matrices at 4 K for electron spin resonance (ESR) investigation. The ground electronic state of GaP +... (Read more)
- 609. J. Non-Cryst. Solids 111, 16-28 (1989) , “Mechanism of photochromism in oxide glasses containing a large amount of CdO or ZnO”, H. Kawazoe, R. Suzuki, S. Inoue and M. YamaneUV-induced optical and ESR absorptions of borosilicate glasses containing a large amount ( 50 mol%) of CdO or ZnO were measured at room temperature and 77 K while changing the wavelength of the illuminating light. The induced optical absorption was one order of magnitude stronger at 77 k than at... (Read more)
- 610. J. Phys.: Condens. Matter 1, 9801 (1989) , “14N ENDOR of the N2 centre in diamond”, M. E. Newton, J. M. Baker14N ENDOR in the N2 centre in diamond demonstrates that nitrogen is a constituent of the centre. (Read more)
- 611. J. Phys.: Condens. Matter 1, 35 (1989) , “The Structure of Chalcogen Pairs in Silicon”, S. Greulich-Weber, J. R. Niklas, J. M. Spaeth.The chalcogen pair centres (S-S)+ and (Se-Se)+ in Si were investigated with electron-nuclear double resonance (ENDOR). It was possible to resolve the superhyperfine interactions with 16 shells ((S-S)+) and 20 shells ((Se-Se)+) of 29Si neighbours... (Read more)
- 612. J. Phys.: Condens. Matter 1, 10549 (1989) , “14N ENDOR of the OK1 centre in natural type Ib diamond”, M. E. Newton, J. M. BakerAn ENDOR investigation has confirmed that the OK1 centre is a low-symmetry ( sigma h) centre, incorporating a single nitrogen atom. The 14N hyperfine and quadrupole coupling matrices have been determined by fitting the data to an exact solution of the energy matrix. Using this... (Read more)
- 613. J. Vac. Sci. Technol. B 7, 710 (1989) , “Stoichiometry-related defects in GaAs grown by molecular-beam epitaxy at low temperatures”, M. Kaminska, E. R. Weber, Z. Liliental-Weber, R. Leon, Z. U. RekGaAs layers grown by molecular-beam epitaxy (MBE) at very low substrate temperatures have gained considerable interest as buffer layers for GaAs metalsemiconductor field effect transistors (MESFET's) due to high resistivity and excellent device isolation. However, the structure and the... (Read more)
- 614. Jpn. J. Appl. Phys. 28, 142 (1989) , “Electron Spin Resonance of Oxygen-Nitrogen Complex in Silicon”, A. Hara, T. Fukuda, T. Miyabo, I. Hirai.We observed the electron spin resonance of oxygen-nitrogen complexes (ONCs) and found that they have C2V symmetry. Although they contain nitrogen, hyperfine interaction (hf) with nitrogen cannot be clearly observed. These characters of ONCs resemble thermal donors (TDs) very closely. (Read more)
- 615. Phys. Rev. B 40, 6509 (1989) , “Cross-relaxation dynamics of optically excited N-V centers in diamond”, E. van Oort, M. GlasbeekUpon the cw optical excitation of N-V centers in diamond, a spin alignment in the ensemble of nonexcited N-V defects in the electron spin-triplet ground state is induced. When the diamond sample is subjected to magnetic fields of suitable directions and strengths, cross relaxation (CR) and level... (Read more)
- 616. Phys. Rev. B 40, 4054 (1989) , “Oxygen-Vacancy Complex in Silicon. II. 17O Electron-Nuclear Double Resonance”, R. van Kemp, M. Sprenger, E. G. Sieverts, C. A. J. Ammerlaan.An electron-nuclear double-resonance (ENDOR) study was performed on the negatively charged oxygen-vacancy complex in silicon. By introducing the isotope 17O (nuclear spin I=(5/2) to an enrichment of about 40%, it was possible to detect ENDOR transitions of this nucleus. In the experiment... (Read more)
- 617. Phys. Rev. B 40, 4037 (1989) , “Oxygen-Vacancy Complex in Silicon. I. 29Si Electron-Nuclear Double Resonance”, R. van Kemp, E. G. Sieverts, C. A. J. Ammerlaan.The negative charge state of the oxygen-vacancy complex in silicon has been studied by electron-nuclear double resonance. Hyperfine interactions between the unpaired electron and 29Si nuclei in 50 shells of neighboring lattice sites have been determined. These shells contain 145 lattice... (Read more)
- 618. Phys. Rev. B 40, 3872 (1989) , “Differentiation of electron-paramagnetic-resonance signals of arsenic antisite defects in GaAs”, Mark Hoinkis and Eicke R. WeberTemperature-dependence studies of GaAs electron-paramagnetic-resonance (EPR) quadruplet signals ascribed to arsenic antisite-related (AsGa+) defects are reported. Observations were made before and after white-light illumination in as-grown, thermally treated, plastically... (Read more)
- 619. Phys. Rev. B 40, 1732 (1989) , “Structure of Thermal Donors (NL8) in Silicon: A Study with Electron-Nuclear Double Resonance”, J. Michel, J. R. Niklas, J. –M. Spaeth.Singly ionized thermal donors [(TD)+], which give rise to the NL8 ESR spectrum, were investigated with electron-nuclear double resonance (ENDOR) in B-doped Czochralski-grown silicon and float-zone silicon into which the magnetic isotope 17O was diffused. TD’s were formed by... (Read more)
- 620. Phys. Rev. B 39, 7978 (1989) , “Structure of the Heat-Treatment Centers NL8 and NL10 in Silicon”, J. Michel, N. Meilwes, J. –M. Spaeth.An electron-spin-resonance investigation on n-type (P-doped) and an electron-nuclear double-resonance (ENDOR) investigation on p-type (B- and Al-doped) Czochralski-grown oxygen-rich Si was performed after annealing at 460 °C and formation of the heat-treatment centers Si-NL8 and Si-NL10. The NL10... (Read more)
- 621. Phys. Rev. B 39, 6253 (1989) , “Electron paramagnetic resonance identification of the SbGa heteroantisite defect in GaAs:Sb”, M. Baeumler, J. Schneider, U. Kaufmann, W. C. Mitchel, P. W. YuGaAs doped with antimony (Sb) to a level of 1019 cm-3 has been studied by electron paramagnetic resonance (EPR). A new EPR spectrum has been discovered which is identified as the SbGa heteroantisite defect. The electronic structure of this defect is practically... (Read more)
- 622. Phys. Rev. B 39, 5538 (1989) , “Unification of the properties of the EL2 defect in GaAs”, M. Hoinkis, E. R. Weber, W. Walukiewicz, J. Lagowski, M. Matsui, H. C. Gatos, B. K. Meyer, J. M. SpaethWe provide experimental unification of the properties of EL2 in GaAs, linking the measurements of optical absorption, deep-level transient spectroscopy, electron paramagnetic resonance (EPR), magnetic circular dichroism (MCD), optically detected electron-nuclear double resonance (ODENDOR). Results... (Read more)
- 623. Phys. Rev. B 39, 2864 (1989) , “Observation of the Localized Si Dangling-Bond Pb Defect at the Si/Si3N4 Interface”, A. Stesmans, G. Van Gorp.Low-temperature electron-spin resonance (ESR) reveals the presence of the Pb defect (identified with Si?Si3) at the thermally grown (111)Si/Si3N4 interface. This constitutes the first observation of this defect (called PbN) at a natural Si/solid... (Read more)
- 624. Phys. Rev. B 39, 1966 (1989) , “Comment on "Atomic model for the EL2 defect in GaAs"”, H. J. von Bardeleben, J. C. Bourgoin, D. StievenardThe AsGa-VGa-VAs model for the EL2 defect in liquid encapsulated Czochralski grown GaAs proposed by Wager and Van Vechten is not supported by the experimental results: Neither divacancy defects nor gallium-vacancy-related defects have been observed by positron... (Read more)
- 625. Phys. Rev. B 39, 1648 (1989) , “Silicon Electron-Nuclear Double-Resonance Study of the NL10 Heat-Treatment Center”, H. H. P. Th. Bekman, T. Gregorkiewicz, and C. A. J. Ammerlaan29Si electron-nuclear double-resonance (ENDOR) measurements were performed for the Si-NL10 center. The results were compared with the 29Si ENDOR measurements of the Si-NL8 spectrum and were found to be similar with the defect electron being even more delocalized in the case of... (Read more)
- 626. phys. stat. sol. (b) 156, 325 (1989) , “EPR of Lithium-Induced Silicon-5dn Pairs in Silicon”, M. Höhne.A platinum-analogue to the lithium-induced silicon-gold pair, previously investigated, is now detected by EPR. The results underline the close similarity of platinum- and gold-related defects in silicon and suggest a remark concerning the absence of an EPR-proof of the isolated gold defect, contrary... (Read more)
- 627. Semicond. Sci. Technol. 4, 1000 (1989) , “The .Si ≡ Si3 defect at various (111)Si/SiO2 and (111)Si/Si3N4 interfaces”, A. Stesmans.The low-temperature (2 ≤ T ≤ 45 K) X- and K-band electron spin resonance (ESR) properties of the Si/SiO2 interfacial (111) PbO defect-identified with .Si ≡ Si3 and with the unpaired sp3 hybrid along (111)-as localised at three 'different'... (Read more)
- 628. Solid State Commun. 70, 807 (1989) , “EPR Identification of a Trigonal FeIn Defect in Silicon”, P. Omling, P. Emanuelsson, W. Gehlhoff and H. G. GrimmeissA new electron paramagnetic resonance signal is observed in silicon which has been co-doped with indium and iron. The spectrum shows trigonal symmetry, and the involvement of one Fe and one In atom is proven from the observed hyperfine interactions. The defect is identified as an InS-Fei pair... (Read more)
- 629. Sov. Phys. Semicond. 23, 44 (1989) , “Influence of random fields on the ESR spectrum of MnGa acceptors in p-type GaAs”, N. S. Averkiev, A. A. Gutkin, O. G. Krasikova, E. B. Osipov, M. A. Reshchikov
- 630. Sov. Phys. Solid State 31, 1376 (1989) , “Equivalent States of Muonium and Hydrogen in Silicon”, R. B. Gelfand, V. A. Gordeev, Yu. V. Gorelkinski?, R. F. Konopleva, S. A. Kuten, A. V. Mudry?, N. N. Nevinny?, Yu. V. Obukhov, V. I. Rapoport, A. G. Ulyashin, V. G. Firsov.An experimental investigation was made of the hydrogenic states having an anisotropic hyperfine structure, which were formed in silicon single crystals as a result of implantation of high-energy muons and protons. The characteristics of the states of "anomalous" muonium (Mu*) and a hydrogen center (Si-AA9, investigated by the methods of muon spin rotation (μSR) and electron spin resonance (ESR) in silicon allowing for the isotopic effect, were found to be similar. This was the basis for hypothesizing the existence of two equivalent structures in silicon (Mu*) and Si-AA9), differing only with respect to the mass of the hydrogenic atom occuring in each of the centers. Semiemprecal cluster calculations were made of the electronic structure of the se centers under conditions of hydrogen (muonium) localization at different lattice interstices. The parameters of the hyperfine interaction and the electronic g factors of the impurity atom were calculated. The most probable configuration of the Mu* and Si-AA9 complexes, and their charge state were established.
- 631. Superlatt. Microstruct. 5, 99-102 (1989) , “Electron-spin-resonance in an AlGaAs---GaAs single-side doped quantum-well”, F. Malcher, G. Lommer, M. Dobers and G. WeimannThe spin-splitting of subband Landau levels in an Al0.35Ga0.65As-GaAs single-side doped quantum well is calculated selfconsistently using an effective 2×2 subband Hamiltonian, which is derived from a five-level k · p-model by fourth order perturbation theory and includes remote band... (Read more)
- 632. Appl. Phys. Lett. 53, 508 (1988) , “Passivation of Paramagnetic Si-SiO2 Interface States with Molecular Hydrogen”, K. L. Brower.Dry thermal oxides were grown on (111) silicon substrates at 850 °C. The Pb centers associated with this (111) Si-SiO2 interface were observed with electron paramagnetic resonance to be stable under subsequent annealing in vacuum up to at least 850 °C. The... (Read more)
- 633. J. Catalysis 111, 199-209 (1988) , “Structural analysis of ZnO/ZnCr2O4/Pd catalyst”, Lucio ForniThe ZnO/ZnCr2O4/Pd mixture is an effective catalyst for the preparation of pyrazines from diamines and glycols. The effects of the method of preparation, the Zn/Cr ratio, and the concentration of Pd have been studied by analyzing the catalyst structure using several techniques. In the coprecipitated... (Read more)
- 634. J. Chem. Phys. 88, 481 (1988) , “Neon matrix ESR investigation of 69,71GaAs + generated by the photoionization of laser vaporized GaAs(s)”, Lon B. Knight, Jr. and J. T. PettyThe first spectroscopic results are reported for the 69,71GaAs + cation radical generated by photoionizing GaAs (g) produced by the pulsed laser vaporization of GaAs (s). The GaAs + cation was trapped in neon matrices at 4 K for ESR investigations... (Read more)
- 635. J. Non-Cryst. Solids 104, 85-94 (1988) , “Radiation damage in vitreous fused silica induced by MeV ion implantation*1”, Shi Chengru, Tan Manqi , T. A. TombrelloThe nature of E′1 defects in vitreous fused silica induced by high energy (1–17 MeV) Cl and F ion implantation in terms of ion fluence, ion energy, saturation behavior and annealing feature, has been studied and compared with results obtained after 2 MeV proton and 0.633 MeV... (Read more)
- 636. J. Phys. C: Solid State Phys. 21, 4385 (1988) , “Optically detected spin coherence of the diamond N-V centre in its triplet ground state”, E. van Oort, N. B. Manson, M. GlasbeekFor the N-V centre in type Ib diamond the optical detection of spin coherence in the 3A state is reported. The 3A-state lifetime is studied as a function of the light intensity used for the optical excitation of the N-V centre by means of spin-locking experiments. The... (Read more)
- 637. Jpn. J. Appl. Phys. 27, 1808 (1988) , “ESR in Diamond Thin Films Synthesized by Microwave Plasma Chemical Vapor Deposition”, I. Watanabe, K. SugataA variety of diamond films of poor and good quality are synthesized by microwave plasma CVD from a mixture of hydrogen and CH4, CH3OH or C2H5OH. A comparative study on the ESR and Raman spectra of these films is performed. The diamond films of good quality... (Read more)
- 638. Phys. Rev. B 38, 9657 (1988) , “Kinetics of H2 Passivation of Pb Centers at the (111) Si-SiO2 Interface”, K. L. Brower.This paper is concerned with the determination of the kinetic parameters and the chemical reactions that characterize the passivation of Pb centers with molecular hydrogen. Pb centers are paramagnetic defects at the (111) Si-SiO2 interface. In this study... (Read more)
- 639. Phys. Rev. B 38, 6308 (1988) , “EPR Observation of a Platinum Pair Complex in Si”, H. J. von Bardeleben, D. Stiévenard, M. Brousseau, J. Barrau.We report the observation of a (Pt-Pt) pair in Si. The defect is paramagnetic, with a g tensor of C2v symmetry and principal values of g[110]=2.1869, g[1¯10]=1.5181, and g[001]=1.6317. The central hyperfine spectra show interaction with two equivalent Pt ions. This defect gives rise to an... (Read more)
- 640. Phys. Rev. B 38, 6003 (1988) , “EL2 and the electronic structure of the AsGa-Asi pair in GaAs: The role of lattice distortion in the properties of the normal state”, G. A. Baraff, M. Lannoo, and M. SchlüterThe proposal that in its normal state EL2 is an AsGaAsi pair with a [111] axis and two-bond-length separation is tested by performing electronic structure calculations for that defect pair. The Asi is allowed to minimize its energy by moving along the [111] axis. Its... (Read more)
- 641. Phys. Rev. B 38, 5453 (1988) , “Electron-spin resonance in the two-dimensional electron gas of GaAs-AlxGa1-xAs heterostructures”, M. Dobers, K. v. Klitzing, G. WeimannElectron-spin resonance affects the magnetoresistivity of GaAs-AlxGa1-xAs heterostructures. With microwave frequencies of up to 70 GHz we studied systematically the spin splitting of the Landau levels in magnetic fields up to 14.5 T. The resonances within a certain Landau level... (Read more)
- 642. Phys. Rev. B 38, 4388 (1988) , “Sign of the hyperfine parameters of anomalous muonium in diamond”, W. Odermatt, Hp. Baumeler, H. Keller, W. Kündig, B. D. Patterson, J. W. Schneider, J. P. F. Sellschop, M. C. Stemmet, S. Connell, D. P. SpencerObservations with the muon-spin-rotation (?SR) technique of the thermally activated transition from the isotropic muonium state Mu to the anisotropic muonium state Mu* in diamond are used to determine the sign of the Mu* hyperfine constants. It is found that the isotropic part... (Read more)
- 643. Phys. Rev. B 38, 3998 (1988) , “Microscopic Structure of the NL10 Heat-Treatment Center in Silicon: Study of Electron-Nuclear Double Resonance”, T. Gregorkiewicz, H. H. P. Th. Bekman, and C. A. J. AmmerlaanThe defect center giving rise to the Si-NL10 EPR spectrum has been investigated by the electron-nuclear double-resonance (ENDOR) technique. Three separate experiments have been performed: oxygen ENDOR of 17O nuclei, aluminum ENDOR of 27Al, and field-stepped ENDOR. As a result a... (Read more)
- 644. Phys. Rev. B 38, 1589 (1988) , “Motional Effects between On-Center and Off-Center Substitutional Nitrogen in Silicon”, Kouichi Murakami, Hitoshi Kuribayashi, and Kohzoh MasudaWe have found for the first time that the hyperfine splitting of the ESR of off-center substitutional nitrogen in silicon increases with increasing the temperature above ? 150 K. A model is proposed in which a hypothetical on-center substitutional N site exists in an adiabatic potential-energy... (Read more)
- 645. Phys. Rev. B 38, 13291 (1988) , “Sulfur Pair in Silicon: 33S Electron-Nuclear Double Resonance”, A. B. van Oosten, C. A. J. Ammerlaan.Sulfur pairs in silicon are studied by electron paramagnetic resonance (EPR) and by 33S electron-nuclear double resonance. The trigonal symmetry and electron spin S=(1/2 are experimentally established. For magnetic field B parallel to the [111] pair axis, the EPR intensity is strongly... (Read more)
- 646. Phys. Rev. B 37, 8949 (1988) , “Electron-Nuclear Double Resonance of Interstitial Positively Charged Iron in Silicon”, J. J. van Kooten, E. G. Sieverts, and C. A. J. AmmerlaanThe positively charged state of interstitial iron in silicon was studied by means of electron-nuclear double resonance. We have found hyperfine interactions of the impurity electrons with eight shells of silicon neighbors containing 98 atoms. Because the ground state of interstitial Fe+... (Read more)
- 647. Phys. Rev. Lett. 61, 227 (1988) , “Si-NL10: Paramagnetic Acceptor State of the Silicon Thermal Donor”, H. H. P. Th. Bekman, T. Gregorkiewicz, and C. A. J. AmmerlaanElectron paramagnetic resonance studies on several donor- and acceptor-doped, oxygen-rich, silicon samples have been performed. The intensity of the spectrum Si-NL10 has been investigated as a function of heat-treatment time, temperature, and illumination. The results provide evidence for an... (Read more)
- 648. Phys. Rev. Lett. 61, 1650 (1988) , “Electrical Detection of Nuclear Magnetic Resonance in GaAs-AlxGa1-xAs Heterostructures”, M. Dobers, K. v. Klitzing, J. Schneider, G. Weimann, K. PloogThe experimental investigation of the electron spin resonance in the two-dimensional electron gas of GaAs-AlxGa1-xAs heterostructures via the ESR-induced change of magnetoresistivity reveals hysteresis and long-persisting memory effects. We have been able to prove the nuclear... (Read more)
- 649. Phys. Rev. Lett. 60, 460 (1988) , “Bistable Defect in Silicon: The Interstitial-Carbon-Substitutional-Carbon Pair”, L. W. Song, X. D. Zhan, B. W. Benson, G. D. Watkins.By combining several spectroscopic techniques, we have observed a new type of bistable center in electron-irradiated silicon and have identified it as an interstitial-carbon–substitutional-carbon pair. The positive and negative charge states of the defect share a common stable configuration which... (Read more)
- 650. Phys. Rev. Lett. 60, 2187 (1988) , “Metastability of the Isolated Arsenic-Antisite Defect in GaAs”, D. J. Chadi and K. J. ChangWe propose that a neutral As-antisite defect in GaAs has a stable fourfold and a metastable, threefold interstitial configuration differing by 0.24 eV in their energies. The barrier height from the metastable to the normal state is calculated to be 0.34 eV. The metastable geometry is predicted to... (Read more)
- 651. Phys. Rev. Lett. 60, 2183 (1988) , “Theoretical Evidence for an Optically Inducible Structural Transition of the Isolated As Antisite in GaAs: Identification and Explanation of EL2?”, Jaroslaw Dabrowski, Matthias SchefflerWe performed parameter-free, self-consistent calculations of the electronic structures, total energies, and forces of the As antisite, of an As-interstitial-Ga-vacancy defect pair, and of various configurations between these limits. The total-energy surface exhibits an interesting metastability. The... (Read more)
- 652. Phys. Stat. Sol. (b) 145, 609 (1988) , “Electron Paramagnetic Resonance of the Mn40 Cluster in Silicon”, J. Kreissl, W. Gehlhoff.In high-resistivity p-type and n-type silicon doped with manganese the Mn40 cluster is identified by EPR. The spectrum shows a characteristic hyperfine structure and an angular dependence of fine structure at 20 K. The analysis of the spectrum yield the assumption of the... (Read more)
- 653. Solid State Commun. 67, 573 (1988) , “ESR investigations of CrCu and CrAu pairs in silicon”, D. Rodewald, S. Severitt, H. Vollmer and R. LabuschA new ESR spectrum ist observed after co-diffusion of Cr and Cu in Si. Because of its axial [111]-symmetry and its spin S = 3/2 it is interpreted as a (Cr1 Cus)° pair. (Read more)
- 654. Solid State Commun. 65, 1039 (1988) , “Paramagnetic resonance of a Se-Al complex in silicon”, A. B. van Oosten and C. A. J. AmmerlaanIn selenium diffused, aluminum doped silicon a new electron paramagnetic resonance (EPR) spectrum, Si-NL31, was observed as a broad structure superposed on the selenium pair resonance. The EPR spectrum could not be analyzed directly, but an intense 27Al electron nuclear double resonance... (Read more)
- 655. Sov. Phys. JETP 67, 1697 (1988) , “Electric-Dipole Spin Resonance of Localized Electron States at Dislocation Dipoles in Undeformed Oxygen-Containing Silicon”, V. M. Babich, N. P. Baran, A. A. Bugai, A. A. Konchits, B. D. Shanina.An electric-dipole spin resonance (EDSR) of new local centers at dislocation dipoles, formed as a result of prolonged annealing of undeformed silicon, was observed for the first time and investigated. At low temperatures (1.7-40 K) such undeformed silicon samples exhibited considerable microwave conductivity, the behavior of which was correlated with that of EDSR of new (Si-2K and Si-3K) centers. The intensity and profile of the EDSR signals due to these centers depended on the intensity and orientation of the E1 component of the microwave field and the absorption lines were in the form of asymmetric dispersion curves. Both the resonant and the microwave conductivity disappeared (reversibly) as a result of interband illumination and irreversibly as a result of ultrasonic excitation of considerable amplitude, electron or gamma-ray bombardment, or annealing at T ≥ 1150 K. The Rashba and Sheka theory of the EDSR was modified for the case of local dislocation centers. A theory was developed of the profile of the EDSR lines, which accounts completely for the experimental results.
- 656. Sov. Phys. Semicond. 22, 666 (1988) , “Low-Symmetry Interstitial Defect in Neutron-Irradiated Silicon”, A. V. Dvurechenski?, A. A. Karanovich.the ESR method was used in detection and investigation of a new paramagnetic center (designated H12 by the present authors) in silicon irradiated with large neutron doses. The concentration of the H12 centers was ~1016cm-3 when the radiation does was ~1019cm-2; it was independent of the nature of the dopant and the crystal growth method. The angular dependence of the ESR spectrum was described by a spin Hamiltonian with an electron spin s ï¼ 1/2 and a Ä tensor characterized by the C1 (or Ci) symmetry. The hyperfine structure of the H12 spectrum included three groups of lines which correspond to one, two, and two or three sites in the zeroth, first, and second "shells" of the defects, respectively. High-temperature (T ï¼ 100-200 ℃) uniaxial compression resulted in partial reorientation of the defect, which was characterized by an activation energy Ea ~1 eV and a frequency factor ν0~1013 s-1. The structure of the immediate environment of the defect, its symmetry, and the similarity of the hyperfine structure parameters and of the Ä tensor of the H12 and P6 spectra (the latter representing a complex of two interstitial atoms) were used, together with the nature and magnitude of teh response of the ESR spectrum to uniaxial compression, to propose a model of the H12 defect in the form of a complex of three interstitial atoms (I3+).
- 657. Sov. Phys. Semicond. 22, 408 (1988) , “Electron spin resonance of bound holes in GaAs:Mn”, V. F. Masterov, K. F. Shtel'makh, M. N. Barbashov
- 658. Appl. Phys. Lett. 50, 1733 (1987) , “Pentavacancies in Plastically Deformed Silicon”, M. Brohl, C. Kisielowski-Kemmerich, and H. AlexanderHigh-pressure/low-temperature plastic deformation of silicon leads to the appearance of new electron spin resonance active centers. One of them could be identified to be the pentavacancy Si-P1, which also can be produced by irradiation. Depending on the deformation axis the defect occurs in... (Read more)
- 659. Appl. Phys. Lett. 50, 1450 (1987) , “Paramagnetic centers at Si-SiO2 interfaces in silicon-on-insulator films”, W. E. CarlosElectron spin resonance measurements of silicon-on-insulator materials formed oxygen implantation are reported. The principal paramagnetic defect observed is a Pb center at the interface between Si and SiO2 precipitates in the Si film over the buried oxide layer.... (Read more)
- 660. J. Appl. Phys. 62, 4404 (1987) , “Electron-Paramagnetic-Resonance Study of Heat-Treatment Centers in n-Type Silicon”, H. H. P. Th. Bekman, T. Gregorkiewicz, D. A. van Wezep, and C. A. J. AmmerlaanDonor formation in heat-treated phosphorus-doped Czochralski-grown silicon has been studied by electron paramagnetic resonance and resistivity measurements. Both ``thermal-donor-'' and ``new-donor''-formation temperature regions (470 and 650 °C, respectively) have been investigated. The results... (Read more)
- 661. J. Phys. C: Solid State Phys. 20, 841 (1987) , “Self-ENDOR of Vanadium in Silicon”, J. J. van Kooten, D. van Kootwijk, C. A. J. Ammerlaan.Self-ENDOR measurements for the 51V isotope of double-positive vanadium in silicon are presented. The spin-Hamiltonian parameters have been determined. For an adequate description of the spectrum it was necessary to include a higher-order hyperfine term of the type S3I in the... (Read more)
- 662. J. Vac. Sci. Technol. B 5, 762 (1987) , “Observation of optically detected magnetic resonance signals in AlxGa1–xAs”, M. G. Spencer, T. A. Kennedy, R. Magno, J. GriffinOptically detected magnetic resonance (ODMR) techniques which utilize weak spin effects on deep photoluminescence have been applied to MBE AlxGa1xAs. ODMR [unlike conventional electron paramagnetic resonance (EPR)] experiments is ideally suited for thin... (Read more)
- 663. Nucl. Instrum. Methods Phys. Res. 22, 553-555 (1987) , “Ion channeling study of damage in neutron irradiated GaAs”, K. Kuriyama, M. Satoh, M. Yahagi, K. Iwamura, C. Kim, T. Kawakubo, K. Yoneda and I. KimuraThe lattice disorder in GaAs produced by fast neutrons with a fluence of 7 × 1017 n cm−2 has been investigated with 1.5-MeV 4He+ channeling and electron spin resonance (ESR) measurements. The slight change in the 100-aligned yield for irradiated crystals indicates that each primary... (Read more)
- 664. Phys. Lett. A 125, 354 (1987) , “EPR Evidence of Helium-Oxygen-Vacancy Complexes in Crystalline Silicon”, Yu. V. Gorelkinskii, N. N. Nevinnyi and S. S. AjazbaevTwo new (S = 1) EPR spectra, labeled Si-AA7 and Si-AA8, arise from a helium-associated defect in crystalline silicon. Both are produced only in Czochralski-grown silicon by helium ion implantation at ≈ 20°C followed by annealing at ≈ 180°C and are stable to ≈... (Read more)Si| EPR| AA10 AA7 AA8 Helium vacancy .inp files: Si/V-He-O2 Si/AA10 Si/V-He-O1 | last update: Takeo Kitamura
- 665. Phys. Rev. B 36, 7726 (1987) , “Photoresponse of the FR3 electron-spin-resonance signal in GaAs”, U. Kaufmann, W. Wilkening, and M. BaeumlerThe photoresponse of the FR3 electron-spin-resonance (ESR) signal in GaAs has been studied. Excitation and quenching of the FR3 ESR is shown to result from the optically induced charge exchange between the FR3 center and the AsGa antisite. The FR3 ESR can be persistently excited with... (Read more)
- 666. Phys. Rev. B 36, 6202 (1987) , “Photoelectron Paramagnetic Resonance of Pt- in Silicon”, P. Omling, P. Emanuelsson, H. G. Grimmeiss.The Pt- center in silicon has been identified by its characteristic electron-paramagnetic-resonance (EPR) signal. From photo-EPR measurements, the optical cross sections of holes for the Pt(0/-) transition have been determined at T=4.2 K. A comparison with corresponding optical cross... (Read more)
- 667. Phys. Rev. B 36, 5982 (1987) , “Temperature dependence of hyperfine coupling of the anion antisite in III-V compounds”, A. Mauger, H. J. von Bardeleben, J. C. Bourgoin, M. LannooTemperature-dependent electron-paramagnetic-resonance experiments have been performed on the arsenic antisite defect in electron-irradiated GaAs. The 4.5% decrease of the central hyperfine coupling constant A upon heating from 4 to 250 K is much too large to be attributable to the thermal expansion... (Read more)
- 668. Phys. Rev. B 36, 3528 (1987) , “Electron-Nuclear Double Resonance of Interstitial Chromium in Silicon”, R. van Kemp, E. G. Sieverts, and C. A. J. AmmerlaanThe positively charged state of interstitial chromium in silicon was investigated using electron-nuclear double resonance. We have found the hyperfine interaction of the impurity electrons with nine shells of surrounding silicon neighbors containing 102 atoms. The well-resolved fine structure due to... (Read more)
- 669. Phys. Rev. B 36, 1332 (1987) , “Arsenic antisite defect AsGa and EL2 in GaAs”, B. K. Meyer, D. M. Hofmann, J. R. Niklas, and J.-M. SpaethThe microscopic structure of the paramagnetic anion antisite defect in semi-insulating GaAs was determined by optically detected electron-nuclear double resonance (ODENDOR). It is an arsenic-antisite–arsenic-interstitial (AsGa-Asi) pair. It is shown, by optically detected ESR... (Read more)
- 670. Phys. Rev. B 35, 3810 (1987) , “EPR Studies of Heat-Treatment Centers in p-Type Silicon”, T. Gregorkiewicz, D. A. van Wezep, H. H. P. Th. Bekman, C. A. J. Ammerlaan.The influence of acceptor doping (B,Al,Ga,In) on heat-treatment (HT) centers in oxygen-rich silicon was studied by means of EPR and resistivity measurements. EPR studies revealed that spectra Si-NL8 and Si-NL10 were practically the only ones which could be related to HT centers. They could be... (Read more)
- 671. Phys. Rev. B 35, 1582 (1987) , “Electronic and Atomic Structure of the Boron-Vacancy Complex in Silicon”, M. Sprenger, R. van Kemp, E. G. Sieverts, and C. A. J. AmmerlaanIn electron-irradiated boron-doped silicon the electron paramagnetic resonance spectrum Si-G10 has been studied. Earlier this spectrum had tentatively been identified with a boron-vacancy complex in a next-nearest-neighbor configuration. With electron-nuclear double resonance the hyperfine and... (Read more)
- 672. Phys. Rev. B 35, 1566 (1987) , “Vacancy in Silicon: Hyperfine Interactions from Electron-Nuclear Double Resonance Measurements”, M. Sprenger, S. H. Muller, E. G. Sieverts, and C. A. J. AmmerlaanThe isolated vacancy in silicon has been studied with magnetic resonance spectroscopy. The EPR spectrum labeled Si-G2, identified as arising from the negative charge state of the vacancy, has been investigated by electron-nuclear double resonance. Hyperfine interactions between the unpaired defect... (Read more)
- 673. Phys. Rev. Lett. 59, 240 (1987) , “Electronic Structure of the Neutral Manganese Acceptor in Gallium Arsenide”, J. Schneider, U. Kaufmann, W. Wilkening, M. Baeumler, F. KöhlA new maganese-related isotropic electron-spin-resonance signal at g=2.77 has been observed in GaAs. It is shown to arise from the neutral Mn acceptor, Mn0. The analysis gives an answer to the longstanding question of whether the structure of Mn0 correponds to the... (Read more)
- 674. Phys. Rev. Lett. 59, 1702 (1987) , “Oxygen Incorporation in Thermal-Donor Centers in Silicon”, T. Gregorkiewicz, D. A. van Wezep, H. H. P. Th. Bekman, and C. A. J. AmmerlaanThe paper presents for the first time microscopic evidence for the presence of oxygen in thermal donor centers in silicon. The evidence as obtained by electron nuclear double resonance on the magnetic isotope 17O is conclusive. (Read more)
- 675. Phys. Rev. Lett. 58, 1448 (1987) , “Selective Generation of Oriented Defects in Glasses: Application to SiO2”, J. H. StathisThe use of polarized light to generate oriented paramagnetic centers in glass is discussed. Analytic expressions are derived for the resultant EPR lineshape, and are compared to experimental results obtained for a-SiO2. Analysis of the EPR anisotropy provides information concerning the... (Read more)
- 676. Physica B+C 146, 176-186 (1987) , “Lattice relaxations at substitutional impurities in semiconductors”, Matthias SchefflerThe positions of the crystal nuclei in the surrounding of substitutional impurities in Si and GaAs have been calculated using density-functional theory together with the local-density approximation for exchange and correlation and the total-energy gradient approach. These investigations give a... (Read more)
- 677. Solid State Commun. 64, 1489 (1987) , “Electron Paramagnetic Resonance of an Fe-Fe Pair in Silicon”, J. J. van Kooten, E. G. Sieverts and C. A. J. AmmerlaanThe electron paramagnetic resonance spectrum Si-NL24, which is associated with an iron-iron impurity pair and was earlier observed in electron-irradiated silicon, was produced as a quenched-in defect spectrum. Contrary to previous work we could resolve the complete angular dependence of the spectrum... (Read more)
- 678. Solid State Commun. 61, 199-202 (1987) , “An EPR study on a new triclinic symmetry defect in neutron-irradiated FZ-silicon”, Wu En, Wu Shu-xian, Mao Jin-Chang, Yan Mao-Xun, Qin Guo-gang
- 679. Sov. Phys. JETP 66, 838 (1987) , “Combined Electron Resonance in a One-Dimensional Dislocation Band”, V. V. Kveder, T. R. Mchedlidze, Yu. A. Osipyan, A. I. Shalynin.The intensity and width of the combined electron resonance line for dislocations in silicon are investigated as functions of temperature, microwave electric field, and illumination. the resonance intensity grows as T-2.4 with decreasing temperature; this indicates that the electron mobility increases, and hence that band conduction rather than hoppimg along dislocations is the primary conduction mechanism. The energy of the dislocation band is found, and the saturation and width of the line are discussed
- 680. Sov. Phys. Semicond. 21, 29 (1987) , “Vacancy-Impurity Defect with Spatially Separated Components in Electron-Irradiated Silicon”, A. V. Dvurechenski?, A. A. Karanovich, B. P. Kashnikov.The ESR metod was used to study heavily doped n-type silicon (dopant concentrarions up to 2×1018 cm-3) irradiated with large doses of 1 MeV electrons. The G16 spectrum dominated the results obtained. A superhyperfine structure (SHFS) was observed in the spectrum: it corresponded to the hyperfine interaction of a paramagnetic electron with nuclei of the 29Si silicon isotope which were located in four shells. A numerical analysis of the spectra yielded the SHFS line intensities and the numbers of equivalent sites in the shells: three sites in the first shell, one in the second, two in the third, and five or six in the fourth. A study of the G16 spectrum under unaxial compression conditions at temperatures 150-500 K revealed two activation energies (EA1 ≈ 0.25, EA2 ≈ 1.4 eV ) representing the process of reorientation of the investigated defect. The results obtained were used to propose a model of the G16 center. This was a vacancy-impurity complex in which the vacancy was localized in the second coordination sphere relative to the impurity atom. The mechanism resulting in a spatial separation of the components in this defect was considered. It was assumed that the impurity atom occuring in the G16 center was carbon.
- 681. Appl. Catalysis 21, 133-147 (1986) , “Investigation on the state of copper in copper-zinc oxide biphasic catalyst by EPR and adsorption microcalorimetry”, E. Giamello, B. Fubini and P. LauroBinary Cu---ZnO catalysts active for methanol synthesis and the CO shift reaction were studied by EPR and by adsorption calorimetry. The EPR spectrum of Cu(II) in the calcined catalyst (CuO---ZnO) was studied, and also its evolution on reduction of the calcined into the reduced form... (Read more)
- 682. Appl. Phys. Lett. 49, 348-350 (1986) , “Interface traps and Pb centers in oxidized (100) silicon wafers”, G. J. Gerardi, E. H. Poindexter, P. J. Caplan, N. M. JohnsonThe band-gap energy distribution of Pb centers on oxidized (100) Si wafers has been determined and compared with interface electrical trap density Dit. Two different Pb centers are observed on (100) Si: Pb0,... (Read more)
- 683. Appl. Phys. Lett. 48, 972-974 (1986) , “Electron spin resonance of [1-11], [-111], and [11-1] oriented dangling orbital Pb0 defects at the (111) Si/SiO2 interface”, A. StesmansThe observation of (111) Si/SiO2 interface Pb0 defects (modeled as 0SiSi3) with dangling bonds positioned along [11], [11], and [11] from low-temperature (T30 K) electron spin resonance measurements is reported. This is connected with... (Read more)
- 684. Appl. Phys. Lett. 48, 1282 (1986) , “Photoresponse of the EL2 absorption in undoped semi-insulating GaAs”, B. Dischler, F. Fuchs, and U. KaufmannThe response of the EL2 absorption band to monochromatic secondary illumination has been studied in undoped semi-insulating GaAs. Photoinduced changes of the absorption band are spectrally nonuniform. In... (Read more)
- 685. J. Phys. C: Solid State Phys. 19, 6417 (1986) , “EPR of defects in silicon-on-insulator structures formed by ion implantation. I. O+ implantation”, R. C. Barklie, A. Hobbs, P. L. F. Hemment, K. Reeson.EPR measurements at X band and room temperature have been made of defects produced by implanting (100) and (111) silicon wafers with doses >1018 O- cm-2 using 300 keV O- and 400 keV O2+ ions and an implantation temperature of... (Read more)
- 686. JETP Lett. 43, 255 (1986) , “Combined Resonance at Dislocations in Silicon”, V. V. Kveder, V. Ya. Kravchenko, T. R. Mchedlidze, Yu. A. Osipyan, D. E. Khmelnitski?, A. I. Shalynin.A combined resonance corresponding to transitions between Zeeman levels of electrons trapped in a one-dimensional dislocation band has been observed in plastically deformed silicon. The electrons are trapped by virtue of their motion along a dislocation under the influence of an rf electric field. (Read more)
- 687. Phys. Lett. A 118, 347 (1986) , “An EPR study of a new C2 symmetry defect in neutron-irradiated silicon”, E. Wu, J. C. Mao, S. X. Wu, M. X. Yan, G. G. Qin.A new defect, labeled Si-PK4, has been observed with EPR in neutron-irradiated FZ-silicon grown in argon. Its g tensor reveals that Si-PK4 has monoclinic-II symmetry (C2 point group) with one symmetry axis pointing to 100. According to the empirical classification of g... (Read more)
- 688. Phys. Rev. B 34, 7524-7533 (1986) , “Fundamental radiation-induced defect centers in synthetic fused silicas: Atomic chlorine, delocalized E' centers, and a triplet state”, D. L. Griscom and E. J. FriebeleA series of synthetic fused silicas of diverse OH contents was subjected to 100-keV x irradiations at 77 K and investigated by electron-spin-resonance techniques at ?110 K or higher temperatures. Spectra were recorded at X-band frequencies (?9.2–9.3 GHz) both as the first derivative of absorption... (Read more)
- 689. Phys. Rev. B 34, 7192 (1986) , “Identification of a defect in a semiconductor: EL2 in GaAs”, H. J. von Bardeleben, D. Stiévenard, D. Deresmes, A. Huber, J. C. BourgoinWe present here a complete set of experimental results, obtained by electron paramagnetic resonance (EPR) and deep-level transient spectroscopy (DLTS), on the so-called EL2 defect in GaAs. It is obtained on semi-insulating materials and specially doped materials grown as semi-insulating ones, which... (Read more)
- 690. Phys. Rev. B 34, 4511 (1986) , “Spin Delocalization of Interstitial Iron in Silicon”, D. A. van Wezep, T. Gregorkiewicz, E. G. Sieverts, and C. A. J. AmmerlaanThe apparent contradiction between a covalently delocalized picture of the Si:Fei0 system, suggested among others by the large reduction of the central nucleus hyperfine interaction parameter as compared to the free ion, and the localized picture as has emerged from the... (Read more)
- 691. Phys. Rev. B 34, 3610-3619 (1986) , “Dipolar interactions between dangling bonds at the (111) Si-SiO2 interface”, K. L. Brower, T. J. HeadleyIn this paper a computational model is developed which allows one to calculate the contribution to the Zeeman linewidth arising from magnetic dipole-dipole interactions between unpaired electrons in the dilute limit, which in our specific application correspond to dangling bonds (Pb... (Read more)
- 692. Phys. Rev. B 34, 3610 (1986) , “Dipolar Interactions between Dangling Bonds at the (111) Si-SiO2 Interface”, K. L. Brower, T. J. Headley.In this paper a computational model is developed which allows one to calculate the contribution to the Zeeman linewidth arising from magnetic dipole-dipole interactions between unpaired electrons in the dilute limit, which in our specific application correspond to dangling bonds (Pb... (Read more)
- 693. Phys. Rev. B 34, 1381 (1986) , “Paramagnetic Resonance of a New-Oxygen-Donor Related Center in Silicon”, R. Wörner and O. F. SchirmerIn Czochralski-grown silicon annealed in the temperature range between 650 and 800 °C, an anisotropic electron-spin resonance (ESR) spectrum was observed. Analysis of the angular dependence reveals monoclinic (Cs) symmetry of the representative g tensor, with one of the principal axes... (Read more)
- 694. Phys. Rev. B 34, 1360 (1986) , “Identification of the arsenic-antisite-arsenic-vacancy complex in electron-irradiated GaAs”, H. J. von Bardeleben, J. C. Bourgoin, and A. MiretWe report the observation by electron paramagnetic resonance of a new irradiation-induced defect in n-type GaAs. It is characterized by the spin Hamiltonian parameters S=1 / 2, g=1.97±0.06, A=0.068±0.004 cm-1, I=3 / 2 (100%) and attributed to the complex formed by an... (Read more)
- 695. Phys. Rev. B 33, 5880 (1986) , “Antisite-related defects in plastically deformed GaAs”, P. Omling, E. R. Weber, L. SamuelsonOptical absorption measurements on plastically deformed GaAs show that the total extrinsic absorption increases with deformation, while the quenchable EL2 absorption stays constant. The nonquenchable extrinsic absorption is observed to be proportional to the EPR measured AsGa containing... (Read more)
- 696. Phys. Rev. B 33, 4471 (1986) , “Strain broadening of the dangling-bond resonance at the (111) Si-SiO2 interface”, K. L. BrowerIt is observed that the linewidth and line shape of the Zeeman resonance associated with dangling bonds at the (111)Si-SiO2 interface (Pb centers) vary with the direction of the applied magnetic field. An analysis of the line shape of this resonance indicates that it can be... (Read more)
- 697. Phys. Rev. B 33, 2890 (1986) , “Identification of the arsenic vacancy defect in electron-irradiated GaAs”, H. J. von Bardeleben and J. C. BourgoinWe report the systematic observation of a new electron-paramagnetic-resonance spectrum in a wide series of electron-irradiated GaAs crystals. The spectrum consists of a partially resolved multiplet of 700-G linewidth and an effective g factor of 2.00 for B∥[001] and 2.04 for B∥[110]. Comparison... (Read more)
- 698. Phys. Rev. Lett. 57, 611 (1986) , “Thermal Donors in Silicon: A Study with ENDOR”, J. Michel, J. R. Niklas, and J. -M. SpaethENDOR experiments on paramagnetic thermal donors are presented for the first time. They show that the ESR spectra of all thermal donors identified by ir bands are superimposed in one narrow line ("NL8"). Only 29Si superhyperfine interactions were found and determined for up to seven... (Read more)
- 699. phys. stat. sol. (b) 138, 337 (1986) , “A Silicon-Gold Pair in Silicon Investigated by EPR”, M. Höhne.A new gold-related defect in silicon is observed after IR irradiation. Though a thermal treatment including additional doping with lithium is necessary for the production of this centre, the lithium obviously does not participate in the paramagnetic state. The paramagnetic state is mainly localized... (Read more)
- 700. Solid State Commun. 60, 871-872 (1986) , “The formation of arsenic antisite defects during plastic deformation of GaAs”, E. R. WeberThe electron paramagnetic resonance (EPR) signal of arsenic antisite defects increases after plastic deformation of GaAs. This has been attributed in the preceeding paper to the formation of only compensating acceptors rather than additional antisites. A critical discussion of this alternative model... (Read more)
Showing
10, 25, 50, 100, 500, 1000, all papers per page.
Sort by:
last publication date,
older publication date,
last update date.
All papers (3399)
Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
(view as: tree
,
cloud
)
1329 | untagged |
Materials
(111 tags)
Others(101 tags)
Technique
(46 tags)
Details
(591 tags)
Bond(35 tags)
Defect(interstitial)(18 tags)
Defect(vacancy)(15 tags)
Defect-type(19 tags)
Element(65 tags)
Energy(8 tags)
Isotope(56 tags)
Label(303 tags)
Sample(17 tags)
Spin(8 tags)
Symmetry(15 tags)