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- 401. Solid State Commun. 97, 255 (1996) , “Comparative Analysis of the H2 Passivation of Interface Defects at the (100)Si/SiO2 Interface Using Electron Spin Resonance”, A. Stesmans.The passivation with molecular hydrogen in the range 213–234°C of the interfacial Pb0 and Pb1 defects in (100)Si/SiO2, thermally grown at low temperature (<750°C), has been analyzed by K-band electron spin resonance. The passivation kinetics are found to be well described by the... (Read more)
- 402. Surf. Sci. 361-362, 55-58 (1996) , “Electron spin resonance in AlGaAs/GaAs in the regime of fractional filling”, R. Meisels, I. Kulac, G. Sundaram, F. Kuchar, B. D. McCombe, G. Weimann , W. SchlappWe have studied the electron spin resonance (ESR) at millimeterwave frequencies in high mobility AlGaAs/GaAs samples for the first time at filling factors v < 1 outside the v = 1 resistance minimum. The magnetic field dependence of the ESR measured at T = 1.6 K agrees with the calculations made... (Read more)
- 403. Surf. Sci. 352-354, 793 (1996) , “Pb1 defect study and chemical characterization of the Si(001)---SiO2 interface in oxidized porous silicon”, J. L. Cantin, M. Schoisswohl, H. J. von Bardeleben, F. Rochet, G. Dufour.In comparison with oxidized bulk crystals, we show that the morphology of oxidized porous silicon can offer a unique opportunity of measuring suboxide distribution by conventional XPS and to characterize thoroughly interfacial defects by EPR. (Read more)
- 404. Thin Solid Films 281-282, 275 (1996) , “Formation of paramagnetic defects in CVD diamond films (ESR study)”, Y. Show, Y. Nakamura, T. Izumi, M. Deguchi, M. Kitabatake, T. Hirao, Y. Mori, A. Hatta, T. Ito and A. HirakiParamagnetic defects in CVD (Chemical Vapor Deposition) diamond films were studied using the Electron Spin Resonance (ESR) method. Furthermore, the correlation between defects and electrical resistance of conductive layers on CVD the diamond surface were investigated using ESR and van der Pauw... (Read more)
- 405. Thin Solid Films 274, 50 (1996) , “Structural characterization of CVD diamond films using the ESR method”, Yoshiyuki Show, Mitsuo Iwase and Tomio IzumiThe early deposition stages of diamond films have been studied in detail as a function of growth time, using electron spin resonance methods. The defect center in the non-diamond phase carbon region (g = 2.003, ΔHpp = 8–14 Oe was observed from a sample deposited for 10 min. The defect... (Read more)
- 406. Appl. Phys. Lett. 67, 1280 (1995) , “Impact of Pb doping on the optical and electronic properties of ZnO powders”, K. Vanheusden, W. L. Warren, J. A. Voigt, C. H. Seager, and D. R. TallantElectron paramagnetic resonance (EPR), optical absorption, and photoluminescence (PL) spectroscopy have been combined to characterize Pb-doped ZnO ceramic powders. We observe a decrease in the 2.26 eV emission peak and a concomitant smearing of the band edges, narrowing the effective gap of the... (Read more)
- 407. Diamond Relat. Mater. 4, 877 (1995) , “Properties of diffused diamond films with n-type conductivity”, Galina Popovici, M. A. Prelas, T. Sung, S. Khasawinah, A. A. Melnikov, V. S. Varichenko, A. M. Zaitsev, A. V. Denisenko and W. R. FahrnerHigh quality, freestanding "white" CVD diamond films, 230 μm thick, polished on both sides and with resistivity 1014Ω cm were used for diffusion of impurities to obtain n-type conductivity. Diffusion of lithium, oxygen and chlorine was performed under a bias. Auger analysis was... (Read more)
- 408. Diamond Relat. Mater. 4, 508 (1995) , “Effective correlation energies for defects in a-C:H from a comparison of photelectron yield and electron spin resonance experiments”, J. Ristein, J. Schäfer and L. LeyAmorphous hydrogenated carbon films (a-C:H) were deposited by r.f. plasma CVD from methane, varying the self bias potential of the substrate electrode by means of the r.f. power coupled into the discharge. Films were characterized by IR and optical spectroscopy, confirming a transition from... (Read more)
- 409. Diamond Relat. Mater. 4, 177 (1995) , “Photoinduced absorption lines related to nickel impurity in annealed synthetic diamonds”, A. P. Yelisseyev and V. A. NadolinnyThe absorption lines at 539.9, 546.6 and 552.9 nm induced by visible or UV light illumination in synthetic diamonds annealed at T 2000 K and 5.5 GPa have been studied. The lines are associated with two different nitrogen-nickel defects, while the photoinduction effect is a result of internal... (Read more)
- 410. J. Appl. Phys. 78, 7059 (1995) , “Characterization of heavily B-doped polycrystalline diamond films using Raman spectroscopy and electron spin resonance”, P. Gonon, E. Gheeraert, A. Deneuville, F. Fontaine, L. Abello, G. LucazeauHeavily B-doped polycrystalline diamond films ([B]~" align="bottom">1019 cm3) are studied by Raman spectroscopy and electron spin resonance. The formation of an impurity band is accompanied by a Fano-type interference for the one-phonon scattering. Bands at 1200 and 500... (Read more)
- 411. J. Appl. Phys. 78, 3874 (1995) , “The erbium-impurity interaction and its effects on the 1.54 µm luminescence of Er3 + in crystalline silicon”, F. Priolo, G. Franzò, S. Coffa, A. Polman, S. Libertino, R. Barklie, D. Carey.We have studied the effect of erbium-impurity interactions on the 1.54 µm luminescence of Er3 + in crystalline Si. Float-zone and Czochralski-grown (100) oriented Si wafers were implanted with Er at a total dose of ~1×1015/cm2. Some samples were also... (Read more)
- 412. J. Appl. Phys. 78, 3077 (1995) , “Generation and Dissociation of Complexes of Iron and Phosphorus Atoms in Silicon”, Hideki Takahashi, Masashi Suezawa, and Koji SuminoTo examine the possibility of generating complexes of iron and phosphorus atoms in silicon, neutral interstitial iron in phosphorus doped silicon crystals with various concentrations were measured with the electron spin resonance (ESR) method after cooling from high temperature at various cooling... (Read more)
- 413. J. Appl. Phys. 78, 2411 (1995) , “Native defects in low-temperature GaAs and the effect of hydrogenation”, R. E. Pritchard, S. A. McQuaid, L. Hart, R. C. Newman, J. Mäkinen, H. J. von Bardeleben, M. MissousA range of experimental techniques has been used to measure point defect concentrations in GaAs layers grown at low temperatures (250 °C) by molecular-beam epitaxy (LT-GaAs). The effects of doping on these concentrations has been investigated by studying samples containing shallow acceptors (Be)... (Read more)
- 414. J. Appl. Phys. 77, 1546 (1995) , “Electrical Detection of Electron Paramagnetic Resonance: New Possibilities for the Study of Point Defects”, B. Stich, S. Greulich-Weber, J. –M. Spaeth.An investigation of the possibilities to measure electron paramagnetic resonance (EPR) with electrical detection (EDEPR) by measuring the microwave or radio frequency-induced change of the photoconductivity of various bulk Si samples containing shallow and deep level defects is presented. It was... (Read more)
- 415. Jpn. J. Appl. Phys. 34, 3418 (1995) , “Hydrogen-like Ultrashallow Thermal Donors in Silicon Crystals”, A. Hara.I investigated the electrical properties of annealed carbon- and nitrogen-rich Czochralski-grown silicon crystals using optical absorption and electron spin resonance, and I discovered the formation of a new kind of hydrogen-like donors,... (Read more)
- 416. Phys. Rev. B 52, 5007 (1995) , “Aggregate Defects of Gold and Platinum with Lithium in Silicon: II. Electronic-Structure Calculations”, H. Weihrich, H. Overhof, P. Alteheld, S. Greulich-Weber, J. –M. Spaeth.We present ab initio total energy calculations for aggregate defects of the noble metals Pt or Au with Li. The calculations are performed in the local spin density approximation to the density-functional theory using the linear-muffin-tin-orbital method in the atomic spheres approximation. We... (Read more)
- 417. Phys. Rev. B 52, 4998 (1995) , “Aggregate Defects of Gold and Platinum with Lithium in Silicon: I. Magnetic Resonance Investigations”, P. Alteheld, S. Greulich-Weber, J. –M. Spaeth, H. Weihrich, H. Overhof, M. Höhne.Trigonal and orthorhombic Au (Pt) defects in Si additionally doped with Li and P, previously investigated with electron paramagnetic resonance (EPR), are shown to be aggregate defects involving substitutional Au (Pt) and interstitial Li. The small Li hyperfine interactions, not resolved in EPR,... (Read more)
- 418. Phys. Rev. B 52, 16575 (1995) , “Vacancy Model for Substitutional Ni-, Pd-, Pt-, and Au0 in Silicon”, G. D. Watkins, P. M. Williams.The vacancy model for the electronic structure in silicon of substitutional transition elements near the end of the 3d, 4d, and 5d series is described and a simplified theoretical treatment for their paramagnetic properties is presented. It is concluded that the complete set of such impurities for... (Read more)
- 419. Phys. Rev. B 52, 12657 (1995) , “Magnetic-resonance measurements on the 5A2 excited state of the neutral vacancy in diamond”, J. A. van Wyk, O. D. Tucker, M. E. Newton, J. M. Baker, G. S. Woods, P. SpearThe ground state of the neutral vacancy in diamond is diamagnetic and therefore has not been studied by electron paramagnetic resonance (EPR). We report the observation of EPR from the 5A2 excited state of the neutral vacancy by EPR when illuminating an electron-irradiated... (Read more)
- 420. Phys. Rev. B 52, 1144 (1995) , “Electron Paramagnetic Resonance Versus Spin-Dependent Recombination: Excited Triplet States of Structural Defects in Irradiated Silicon”, L. S. Vlasenko, Yu. V. Martynov, T. Gregorkiewicz, C. A. J. Ammerlaan.Upon illumination some structural defects in irradiated silicon can be excited into the metastable triplet S=1 states. These triplet states can be involved in the excess-carriers recombination process. This paper provides a theoretical treatment of spin-dependent recombination (SDR) via an excited... (Read more)
- 421. Phys. Rev. B 51, 9612 (1995) , “Microscopic Structure and Multiple Charge States of a PtH2 Complex in Si”, S. J. Uftring, M. Stavola, P. M. Williams, G. D. Watkins.The structure and electrical properties of a PtH2 complex in Si have been studied by vibrational spectroscopy and electron paramagnetic resonance (EPR). The PtH2 complex has been found to introduce two levels in the Si band gap. One level was identified previously and lies near... (Read more)
- 422. Phys. Rev. B 51, 16746 (1995) , “Electron-Paramagnetic-Resonance Identification of Hydrogen-Passivated Sulfur Centers in Silicon”, I. S. Zevenbergen, T. Gregorkiewicz, and C. A. J. AmmerlaanTwo centers are detected in hydrogenated sulfur-doped silicon by means of electron paramagnetic resonance. Both defects, labeled for further reference Si-NL54 and Si-NL55, are very similar and have trigonal symmetry; to better resolve the spectra, the field-scanned electron nuclear double resonance... (Read more)
- 423. Phys. Rev. B 51, 16741 (1995) , “Optical detection of magnetic resonance of nitrogen and nickel in high-pressure synthetic diamond”, M. H. Nazare, P. W. Mason, G. D. Watkins, H. KandaDiamonds grown by the temperature-gradient method using a nickel catalyst exhibit a luminescence spectrum that is dominated by a broad band with sharp lines around 2.56 eV. We report optical detection of magnetic resonance of substitutional N0 and substitutional Ni- in this... (Read more)
- 424. Phys. Rev. B 51, 16721 (1995) , “Electronic states associated with dislocations in p-type silicon studied by means of electric-dipole spin resonance and Deep-Level Transient Spectroscopy”, V. Kveder, T. Sekiguchi, K. Sumino.Dislocation loops consisting of long and straight segments of 60° and screw parts were introduced in p-type Si by deformation under a high stress at a relatively low temperature. Electronic states associated with such dislocations were investigated by means of electric-dipole spin resonance, with... (Read more)
- 425. Phys. Rev. B 51, 11117 (1995) , “Optical cross section for the EL2?EL2* metastable transformation”, N. Radić and B. Å antićA simple and accurate method for the determination of the σ* optical cross section governing the EL2→EL2* transformation kinetics in GaAs is proposed. Previously reported σ* values are critically examined and corrected properly. The obtained absolute values of... (Read more)
- 426. Phys. Rev. Lett. 74, 2030 (1995) , “Role of Hydrogen in the Formation and Structure of the Si-NL10 Thermal Donor”, Yu. V. Martynov, T. Gregorkiewecz, C. A. J. Ammerlaan.Microscopic evidence of a prominent role of hydrogen in the formation and structure of the Si- NL10 thermal donor is presented. Hyperfine interactions with the 1H nucleus have been detected and analyzed by means of electron-nuclear double resonance (ENDOR) and field-scanned ENDOR. Based... (Read more)
- 427. phys. stat. sol. (b) 189, K1 (1995) , “Charge States of Interstitial Defects in Implanted Silicon and Their Annealing Temperatures”, M. Jadan, N. I. Berezhnov, A. R. Chelyadinskii.In radiation physics of silicon a "vacancy" period has persisted for quite a long time. From a number of investigations it has been inferred that a divacancy is the main defect, stable at room temperature in silicon irradiated by fast neutrons and irons[1 to 3]. The concentrations of stable... (Read more)
- 428. Physica B 215, 404 (1995) , “Microwave Conductivity and Spin Resonance of Si-nK Centers at Dislocation Dipoles in Silicon”, A. A. Konchits, B. D. Shanina.Non-resonance microwave absorption (NRMA) due to microwave conductivity (MC) of Czochralski-grown silicon crystal has been studied. The temperature dependence of the MC was measured in the temperature range from 1.7 to 40 K in darkness as well as under the interband light. Exponential growth of the... (Read more)
- 429. Physica B 211, 23-29 (1995) , “Solid state experiments in megagauss fields”, N. Miura, H. Nojiri, Y. Shimamoto and Y. ImanakaThis paper presents a brief review on recent experiments of solid state physics in very high magnetic fields up to 550 T produced by electromagnetic flux compression and the single-turn coil technique, focusing on magneto-optical spectroscopy in semiconductors, low-dimensional magnetic systems and... (Read more)
- 430. Physica B 205, 87-90 (1995) , “Magnetism of interacting donors in zinc-blende GaN”, M. FanciulliThe temperature dependence of the paramagnetic susceptibility of donor centers in zinc-blende GaN thin films observed by monitoring the integral intensity of the electron paramagnetic resonance (EPR) absorption has been analyzed using the donor-molecule model. The theoretical predictions are... (Read more)
- 431. Semicond. Sci. Technol. 10, 977 (1995) , “EPR and ENDOR Observation of Orthorhombic Au-Li and Pt-Li Pairs in Silicon: on the Problem of the Observation of Isolated AuSi0 with Magnetic Resonance”, S. Greulich-Weber, P. Alteheld, J. Reinke, H. Weihrich, H. Overhof, J. M. Spaeth.We report the observation of orthorhombic Au-Li and Pt-Li pairs in Si using EPR and ENDOR techniques and also MCDA spectroscopy. The EPR spectra alone could be mistaken as being due to orthorhombic isolated point defects and ENDOR is required to detect the Li partner of the pair. Comparison of the... (Read more)
- 432. Solid State Commun. 96, 397 (1995) , “Oxidation temperature dependent restructuring of the Pb defect at the (1 1 1) Si/SiO2 interface”, A. Stesmans.Previous electron spin resonance work has unveiled distinct variations in g|| of the Pb interface defects (oSi=Si3) in (1 1 1) Si/SiO2 structures upon upwards crossing of the oxidation temperature range Tox = 750–850°C. These are a drop in g|| of δg|| 0.00008 and a collapse... (Read more)
- 433. Solid State Commun. 93, 383 (1995) , “Gold in Silicon and Other Analogous Donors and Acceptors”, Mats Kleverman, AnnaLena Thilderkvist, Günter Grossmann, Hermann G. Grimmeiss and George D. WatkinsRecent results on the substitutional Au and interstitial Fe deep-level impurities in silicon are discussed in some detail. Their excitation spectra are due to transitions from a deep ground state to shallow states. The good understanding of the electronic structure of the shallow states as well as... (Read more)
- 434. Appl. Phys. Lett. 65, 3320 (1994) , “Power saturation and the effect of argon on the electron spin resonance of diamond deposited from a microwave plasma”, P. B. Lukins and J. KhachanElectron spin resonance (ESR) of microwave plasma chemical vapor deposition diamond shows peaks associated with (i) a P1 substitutional nitrogen defect center, (ii) spin-spin interactions between the paramagnetic sites and neighboring protons, and (iii) a possible contribution from graphitic... (Read more)
- 435. Appl. Phys. Lett. 65, 3260 (1994) , “Paramagnetic centers at and near the Si/SiOx interface in porous silicon”, B. Pivac, B. Rakvin, L. Pavesi.Formation of paramagnetic centers in aged porous silicon samples is studied by electron paramagnetic resonance. Samples oxidized by aging in air at room temperature exhibit the Pb centers as dominant defects. These are formed at the interfaces between the Si nanocrystallites... (Read more)
- 436. Appl. Phys. Lett. 65, 2951 (1994) , “Nitrogen in the isotopically enriched 12C diamond”, S. Zhang, M. E. Zvanut, Y. K. Vohra, S. S. VagaraliAn electron paramagnetic resonance (EPR) characterization study of isotopically enriched 12C diamond grown by General Electric has been carried out. While other commonly used techniques detect no nitrogen in this diamond, the clear EPR spectrum consistently measured a nitrogen... (Read more)
- 437. Appl. Phys. Lett. 65, 2287 (1994) , “Identification of phosphorus in diamond thin films using electron paramagnetic-resonance spectroscopy”, M. E. Zvanut, W. E. Carlos, J. A. Freitas, Jr., K. D. Jamison, R. P. HellmerAn electron paramagnetic-resonance study of diamond films doped by implantation of phosphorus during film deposition is reported. Samples with nominal phosphorus concentration between 1016 and 1017 cm 3 exhibit two isotropic lines of equal intensity separated... (Read more)
- 438. Appl. Phys. Lett. 64, 1091 (1994) , “Electron paramagnetic resonance forbidden transitions from hydrogen in polycrystalline diamond films”, S. H. Holder, L. G. Rowan, J. J. KrebsInvestigation of polycrystalline diamond films by electron paramagnetic resonance at 9.5 and 35 GHZ has revealed the presence of forbidden transitions resulting from a simultaneous microwave induced flipping of unpaired electron spins and environmental nuclear spins. The spacing of the resonance... (Read more)
- 439. Diamond Relat. Mater. 4, 53 (1994) , “Slow emission of the 2.56 eV centre in synthetic diamond”, E. Pereira, L. Santos, L. Pereira, D. M. Hofmann, P. Christmann, W. Stadler and B. K. MeyerThe 2.56 eV luminescence band in synthetic diamond is studied in detail by time resolved photoluminescence and spin resonance measurements. The temperature dependence of the vibronic band shape indicates that between 2 and 20 K there is a noticeable change in relative intensities of the two dominant... (Read more)
- 440. J. Appl. Phys. 75, 7559 (1994) , “Observation of Cr3 + electron paramagnetic resonance center in GaAs co-doped with Cr and In”, Young Ju Park, Tae Ho Yeom, Suk-Ki Min, Il-Woo Park, Sung Ho ChohWe have observed a well-defined Cr3 + (3d3) electron paramagnetic resonance signal at 4 K in vertical gradient freeze semi-insulating GaAs single crystal through a co-doping with Cr and In. On the basis of analyzing the rotation pattern of the Cr3 + center,... (Read more)
- 441. J. Appl. Phys. 75, 2929 (1994) , “Model for NL10 Thermal Donors Formed in Annealed Oxygen-Rich Silicon Crystals”, Akito Hara, Masaki Aoki, Masaaki Koizuka, and Tetsuo FukudaElectron spin resonance (ESR) studies have shown that NL10 thermal donors are formed in oxygen-rich silicon (Si) crystals after annealing. In initial NL10 formation stage, it has C2v symmetry with the principle g values g[100]=1.99982, g[01]=1.99799,... (Read more)
- 442. J. Non-Cryst. Solids 179, 39-50 (1994) , “Paramagnetic resonance of E′-type centers in Si-implanted amorphous SiO2. Si29 hyperfine structure and characteristics of Zeeman resonances*1”, H. Hosono, H. Kawazoe, K. Oyoshi, S. TanakaElectron paramagnetic resonance spectra were measured on SiO2 glasses implanted with Si ions to a fluence of 6 × 1016 cm−2 at an acceleration voltage of 160 kV. Three sets of doublets with different separation were observed in Si29-implanted substrates and were ascribed to primary... (Read more)
- 443. J. Non-Cryst. Solids 179, 1-9 (1994) , “The many varieties of E′ centers: a review”, Robert A. WeeksThree varieties of E′ centers with a spin state, S = 1/2, and with a G-tensor, Gx Gy 2.0003, Gz 2.0018, were identified in the early reports on paramagnetic states in irradiated α-quartz. The atomic structure of two of these had an hydrogen ion (proton) in nearby sites and hence... (Read more)
- 444. J. Phys. Chem. Solids 55, 1353-1356 (1994) , “EPR of [FA]0 centres in zinc chalcogenides”, K. Tarkpea, A. Ots , V. Nikitenko[FA]0 centres in ZnO and ZnS single crystals have been detected by electron paramagnetic resonance. The [FA]0 centre consists of an anion vacancy with a localized electron and a monovalent substitutional impurity replacing an adjacent Zn2+ ion. This impurity is probably a Li+ ion in the case of ZnO... (Read more)
- 445. J. Phys.: Condens. Matter 6, 801 (1994) , “EPR of radiation damage centres W11, W12, W13 and W14 in type Ib diamond”, J. A. van WykW11, W12, W13 and W14 are four paramagnetic defects with S=3/2 observed in electron or neutron irradiated type Ib diamonds. Although spin Hamiltonian parameters have been determined that describe the ESR results very well, it will be shown that the normal spin Hamiltonian with... (Read more)
- 446. J. Phys.: Condens. Matter 6, 6721 (1994) , “A perturbed vacancy model for the R1 EPR centre in diamond”, J. E. Lowther, A. MainwoodRadiation damage produces many defects in diamond that are associated with lattice vacancies and interstitial atoms. EPR has proved to be a valuable tool in the characterization of such defects although often detailed models of the defect structure have not been attempted. It is shown that the R1... (Read more)
- 447. J. Phys.: Condens. Matter 6, 551 (1994) , “13C, 14N and 15N ENDOR measurements on the single substitutional nitrogen centre (P1) in diamond”, A. Cox, M. E. Newton, J. M. BakerNew ENDOR measurements on the single substitutional nitrogen centre in diamond are reported. The CW-ENDOR mechanism utilizes cross relaxation, and measurements have been made on both 14N and 15N, as well as the first detailed 13C ENDOR study on the isotope at the... (Read more)
- 448. Jpn. J. Appl. Phys. 33, 1872 (1994) , “Temperature Dependence of ESR Lines Related to Phosphorus in Silicon”, M. Morooka, M. Tokita, T. Kato, I. Tsurumi.Temperature dependence of ESR in a silicon crystal containing 1.3×1017 phosphorus atoms/cm3 has been investigated at 4-40 K. The ESR signals depend strongly on the specimen temperature. Typical hyperfine structures of... (Read more)
- 449. Mater. Lett. 19, 53-56 (1994) , “The effect of NiO doping on the stoichiometry of ZnO”, P. Lot'k, J. Lounek, L. Koudelka, L. Bene and E. ernokováThe additions of NiO (0–2.0 mol%) to ZnO result in a decrease of the parameter c of its crystal lattice and its high-frequency electrical conductivity and in an elimination of the ESR band with g = 1.96. The observed changes were ascribed to the formation of Zn1−xNixO solid solution,... (Read more)
- 450. Phys. Rev. B 50, 7365 (1994) , “S-Cu-related metastable complex defect in Si by optical detection of magnetic resonance”, W. M. Chen, M. Singh, B. Monemar, A. Henry, E. Janzén, A. M. Frens, M. T. Bennebroek, J. Schmidt.We present experimental results obtained on a S-Cu-related metastable complex defect in Si, by optical detection of magnetic resonance (ODMR) at the X band and the K band. Two photoluminescence emissions arising from the bound-exciton (BE) recombination at the defect in two different configurations... (Read more)
- 451. Phys. Rev. B 50, 5189 (1994) , “Theoretical investigation of the dynamic process of the illumination of GaAs”, Ren Guang-bao, Wang Zhan-guo, Xu Bo, Zhou BingThe dynamic process of light illumination of GaAs is studied numerically in this paper to understand the photoquenching characteristics of the material. This peculiar behavior of GaAs is usually ascribed to the existence of EL2 states and their photodriven metastable states. To understand the... (Read more)
- 452. Phys. Rev. B 50, 2645 (1994) , “Magnetic-resonance studies of tellurium-doped AlxGa1–xAs”, M. Surma, Z. ?ytkiewicz, K. Fronc, M. Godlewski, P. Stallinga, B. MonemarAn ESR study performed on a thick AlxGa1-xAs epilayer with removed GaAs substrate is presented. The measurements were performed on LPEE-grown AlxGa1-xAs (x=0.41) heavily doped with Te. The detailed photo-ESR investigations of the light-induced conversion... (Read more)
- 453. Phys. Rev. B 50, 2645 (1994) , “Magnetic-rasonance studies of tellurium-doped AlxGa1-xAs”, M. Surma, Z. ?ytkiewicz, K. Fronc, M. Godlewski, P. Stallinga, B. MonemarAn ESR study performed on a thick AlxGa1-xAs epilayer with removed GaAs substrate is presented. The measurements were performed on LPEE-grown AlxGa1-xAs (x=0.41) heavily doped with Te. The detailed photo-ESR investigations of the light-induced conversion... (Read more)
- 454. Phys. Rev. B 50, 17618 (1994) , “Acceptor level of substitutional Ni in diamond”, D. M. Hofmann, M. Ludwig, P. Christmann, D. Volm, B. K. Meyer, L. Pereira, L. Santos, E. PereiraSubstitutional Ni- in synthetic diamonds has been investigated by electron-paramagnetic resonance (EPR) and photo-EPR. The photo-EPR investigation shows that the Ni- EPR signal can be diminished by optical illumination, and the threshold energy of 2.47±0.02 eV suggests that the... (Read more)
- 455. Phys. Rev. B 50, 15586 (1994) , “EPR and 14N electron-nuclear double-resonance measurements on the ionized nearest-neighbor dinitrogen center in diamond”, O. D. Tucker, M. E. Newton, J. M. BakerThe nearest-neighbor substitutional nitrogen center [N-N]0 (A center), is one of the most common defects in natural diamond. [N-N]0 is diamagnetic and therefore cannot be studied by electron paramagnetic resonance (EPR). However, the [N-N]+ center is paramagnetic,... (Read more)
- 456. Phys. Rev. B 50, 15449 (1994) , “EPR and ENDOR Study of the Pb Center in Porous Silicon”, V. Ya. Bratus’, S. S. Ishchenko, S. M. Okulov, I. P. Vorona, H. J. von Bardeleben, M. Schoisswohl.The Pb center at the (111) Si-SiO2 interface has been studied with electron-nuclear-double-resonance (ENDOR) spectroscopy taking advantage of the high specific interface area of oxidized porous Si samples. The ENDOR spectrum consists only of two structureless lines at the... (Read more)
- 457. Phys. Rev. B 50, 1511 (1994) , “Electric-Dipole Spin-Resonance Study on Extended Defects in Czochralski-Grown Silicon Developed by Thermal Treatment”, T. R. Mchedlidze, V. V. Kveder, J. Jablonski, and K. SuminoA series of electric-dipole spin-resonance (EDSR) lines, termed Si-SC1 lines, are found to develop in Czochralski-grown Si crystals due to annealing at 650 °C. Some of these lines are very close to Si-2K and Si-3K reported in a previous work. The experimental data are self-consistently explained by... (Read more)
- 458. Phys. Rev. B 49, 7964 (1994) , “Electron Paramagnetic Resonance of Iron- and Aluminum-Related Defects in Silicon”, K. Irmscher, T. Kind, and W. GehlhoffSilicon codoped with aluminum and iron is investigated by electron paramagnetic resonance. Three spectra of trigonal, two of orthorhombic and two of monoclinic symmetry are detected and interpreted as being associated with iron- and aluminum-related defects. Most of the spectra are known but the... (Read more)
- 459. Phys. Rev. B 49, 16999 (1994) , “Distant Iron-Shallow-Donor Pairs in Silicon Detected by Electron Paramagnetic Resonance”, M. Höhne, U. Juda, H. Riemann, J. –M. Spaeth, S. Greulich-Weber.The electron-paramagnetic-resonance transitions of isolated neutral interstitial iron (Fei0) in n-type silicon show a satellite structure, which is clearly detectable for donor concentrations (P or As, respectively) above 1015 cm-3. The satellite structure... (Read more)
- 460. Phys. Rev. B 49, 15392 (1994) , “g tensor for substitutional nitrogen in diamond”, S. Zhang, S. C. Ke, M. E. Zvanut, H. T. Tohver, Y. K. VohraWe report a measurement of an axially symmetric g tensor for the substitutional nitrogen center in type-IIa synthetic isopure 12C diamond. Because the nitrogen concentration of the diamond studied is exceptionally low the electron-paramagnetic-resonance linewidth is sufficiently narrow to... (Read more)
- 461. Phys. Rev. B 49, 13423 (1994) , “EPR Spectroscopy of Platinum-Hydrogen Complexes in Silicon”, M. Höhne, U. Juda, Yu. V. Martynov, T. Gregorkiewicz, C. A. J. Ammerlaan, L. S. Vlasenko.Two similar defects in silicon, resulting from doping with platinum in an atmosphere containing water vapor, were studied by means of electron paramagnetic resonance. Both spectra have effective electron spin S=1/2, and exhibit platinum- and hydrogen-related hyperfine structure and remarkable... (Read more)
- 462. Phys. Rev. B 49, 11010 (1994) , “Strongly perturbed negative-vacancy-related centers in diamond”, J. E. Lowther and J. A. van WykSeveral related defect centers have been observed in synthetic and type-Ib diamond following electron or neutron irradiation. Such centers, termed W centers, have similar characteristic features in that all have a spin of S=3/2 and exhibit an extremely large zero-field splitting. Spin-Hamiltonian... (Read more)
- 463. Phys. Rev. B 49, 10999 (1994) , “Ligand ENDOR on substitutional manganese in GaAs”, S. J. C. H. M. van Gisbergen, A. A. Ezhevskii, N. T. Son, T. Gregorkiewicz, and C. A. J. AmmerlaanIn this paper Ga ligand electron-nuclear double resonance measurements are reported on the substitutional Mn2+ center in GaAs. On the basis of these experiments it is concluded that the Mn2+ center is substitutional on a Ga site. From the electron paramagnetic resonance... (Read more)
- 464. Phys. Rev. B 49, 10307 (1994) , “Trigonal Manganese Cluster in Silicon: An Electron-Paramagnetic-Resonance Study”, J. Kreissl, W. Gehlhoff, H. Vollmer.Besides the known tetrahedral Mn40 cluster, a second Mn cluster is observed by electron paramagnetic resonance in high-resistivity silicon doped with manganese. The spectrum shows trigonal symmetry. The analysis of the fine structure and the hyperfine structure suggests that... (Read more)
- 465. Phys. Rev. Lett. 73, 1457 (1994) , “Stallinga, Gregorkiewicz, and Ammerlaan Reply”, P. Stallinga, T. Gregorkiewicz, and C. A. J. AmmerlaanA drift instability due to electrons trapped in a series of shallow magnetic troughs has been observed and compared to theoretical estimates. The instability, identified as Kadomtsev's trapped-electron mode, is maximum at a density lower than estimated from the theory. (Read more)
- 466. Phys. Rev. Lett. 73, 1456 (1994) , “Comment on "Electron Paramagnetic Resonance of Molecular Hydrogen in Silicon"”, K. L. Brower, S. M. Myers, A. H. Edwards, N. M. Johnson, C. G. Van de Walle, E. H. Poindexter.Stallinga, Gregorkiewicz, Ammerlaan, and Gorelkinskii report the discovery of anew paramagnetic defect (NL52) in hydrogen-implanted and annealed silicon which they identify as s negatively charged <111> molecular hydrogen interstitial in silicon [1]. We discuss first the inconsistencies in this... (Read more)
- 467. Phys. Rev. Lett. 72, 2745-2748 (1994) , “Atomic Hydrogen Reactions with Pb Centers at the (100) Si/SiO2 Interface”, J. H. Stathis, E. CartierWe have investigated the reaction of atomic hydrogen with defects at the (100) Si/SiO2 interface. Similar to previous results on the (111) interface, we find that the two paramagnetic defects at the (100) interface, Pb0 and Pb1, are either passivated or produced by... (Read more)
- 468. Semicond. Sci. Technol. 9, 1623 (1994) , “Thermal Donors in Silicon: an Investigation of Their Structure with Electron Nuclear Double Resonance”, N. Meilwes, J. –M. Spaeth, W. Götz, G. Pensl.Singly ionized thermal double donors (TDD+), which have the so-called NL8 EPR spectrum, have been investigated with electron nuclear double resonance (ENDOR) in silicon doped with various acceptors (Al,B,In,Ga). No differences were detected in the ENDOR spectra and no signals due to any... (Read more)
- 469. Semicond. Sci. Technol. 9, 1346 (1994) , “On the Nature and Structures of Different Heat Treatment Centres in n- and p-Type Silicon”, N. Meilwes, J. –M. Spaeth, V. V. Emtsev, G. A. Oganesyan.Thermally induced defects in oxygen-rich silicon are the thermal donors (TDDS) and the so-called NL10 defects. These defects are formed by annealing at temperatures around 450 degrees C. Whereas the TDDS have a unique nature, some NL10 defects probably have different structures in differently doped... (Read more)
- 470. Solid State Commun. 90, 401 (1994) , “Electron Paramagnetic Resonance Study of the NL51 Spectrum in Hydrogen-Implanted Silicon”, P. Stallinga, T. Gregorkiewicz, C. A. J. Ammerlaan, Yu. V. Gorelkinskii.High-resistivity silicon samples have been implanted with hydrogen and deuterium (dose 5 × 1015 cm−2). After a short heat treatment at low temperatures (20 min at 380–540°C) several electron paramagnetic resonance (EPR) spectra could be detected upon illumination. The most... (Read more)
- 471. Appl. Phys. Lett. 63, 920-922 (1993) , “Nature of Pb-like dangling-orbital centers in luminescent porous silicon”, F. C. Rong, J. F. Harvey, E. H. Poindexter, G. J. GerardiThe Pb-like dangling-orbit centers in luminescent porous silicon (LPSi) have been enhanced to very high concentration (1015 cm2) by gentle oxidation. High signal-to-noise ratio and very sharp lines enable the g-value maps, and... (Read more)
- 472. Appl. Phys. Lett. 63, 1510-1512 (1993) , “Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen”, E. Cartier, J. H. Stathis, and D. A. BuchananAtomic hydrogen is found to simultaneously passivate and depassivate silicon dangling bonds at the Si(111)/SiO2 interface at room temperature via the reactions Pb+H0" align="bottom">PbH and... (Read more)
- 473. Appl. Phys. Lett. 62, 273 (1993) , “Shallow Donor in Separation by Implantation of Oxygen Structures Revealed by Electric-Field Modulated Electron Spin Resonance”, K. Vanheusden and A. StesmansElectric-field modulated K-band electron spin resonance measurements on Si/SiO2/Si structures, formed by implantation of oxygen (SIMOX), were carried out at 4.330 K. Large area metal-oxide-silicon capacitors were fabricated on these structures and optimized for cavity... (Read more)
- 474. Colloids and Surf. A 72, 161-164 (1993) , “Study of a paramagnetic center on an SiO-treated GaAs surface”, G. J. Gerardi, F. C. Rong, E. H. Poindexter, M. Harmatz, H. Shen , W. L. WarrenWe have observed enhanced photoluminescence and an isotropic, singlet electron paramagnetic resonance (EPR) signal from samples of SI c-GaAs as a result of a thermal annealing treatment with SiO under vacuum. The treated samples showed a tenfold increase in photoluminescence. The EPR signal was... (Read more)
- 475. J. Appl. Phys. 74, 5901-5903 (1993) , “The nature of donor conduction in n-GaN”, M. Asif Khan, D. T. Olson, J. N. Kuznia, W. E. Carlos, J. A. Freitas, JrSingle crystal GaN thin films resulting from various deposition techniques are usually dominated by residual donors. To date, the true nature of this donor conduction is not known. Nitrogen vacancies, residual oxygen, and growth defects are cited as potential causes for the residual n-type... (Read more)
- 476. J. Appl. Phys. 73, 8519 (1993) , “Generation Mechanisms of Paramagnetic Centers by Gamma-Ray Irradiation at and near the Si/SiO2 Interface”, K. Awazu, K. Watanabe, H. Kawazoe.Pb (·SiSi3) and E (·SiO3) centers in the Si/SiO2 structure under gamma-ray radiation are studied with the electron-spin-resonance technique. The Si/SiO2 structures of (111), (110), and (100) planes... (Read more)
- 477. J. Appl. Phys. 73, 1797 (1993) , “Magnetic Resonance Spectroscopy in Silver-Doped Silicon”, N. T. Son, T. Gregorkiewicz, and C. A. J. AmmerlaanIn silver-doped silicon, several new electron paramagnetic resonance spectra were observed. Three of these, labeled Si-NL45, Si-NL46, and Si-NL47, were detected in n-type samples. The spectra have trigonal symmetry; the effective electron spin value S equals 1/2. The spectra Si-NL45... (Read more)
- 478. J. Catalysis 140, 585-600 (1993) , “Studies of Gas Adsorption on ZnO Using ESR, FTIR Spectroscopy, and MHE (Microwave Hall Effect) Measurements”, Na B. K., Walters A. B. and Vannice M. A.This paper describes the application of a new technique-Microwave Hall Effect (MHE) measurements-to measure electron mobilities and to determine the effect of adsorption on electron densities of powders. Conduction electron densities calculated from microwave measurements of both mobilities and... (Read more)
- 479. J. Opt. Soc. Am. B 10, 913 (1993) , “Raman-heterodyne-detected nonlinear susceptibility with an arbitrary radio-frequency field strength”, X. -F. He, P. T. H. Fisk, N. B. MansonRaman-heterodyne-detected complex nonlinear susceptibility has been measured and analyzed in detail with a radio-frequency field strength varying from weak to strong. The experiments were carried out on the nitrogen-vacancy color center in diamond involving both nuclear magnetic resonance and electron paramagnetic resonance transitions. The dispersive and the absorptive components of the nonlinear susceptibility are shown to have different saturation behaviors, and an anomalous-amplitude line shape arises where the dispersion component dominates in the response spectrum at high RF powers. The experimental results are found to be in good agreement with theoretical profiles, where no adjustable parameter is included in the calculation. (Read more)
- 480. J. Phys.: Condens. Matter 5, 7929 (1993) , “The R2 EPR centre and 1.685 eV absorption line in diamond”, A. Mainwood, J. E. Lowther, J. A. van WykThe R2 EPR centre and 1.685 eV zero-phonon line seen in the optical absorption spectrum of diamond. have been shown to correlate in intensity and are believed to be associated with the same defect. We propose that the defect responsible is a highly strained vacancy, the origin of strain possibly... (Read more)
- 481. J. Phys.: Condens. Matter 5, 3019 (1993) , “ENDOR of the P2 centre in type-Ia diamonds”, J. A. van Wyk, J. H. N. LoubserThe P2 centre was the first defect observed in diamond with electron spin resonance. Because of a very complicated ESR spectrum many years elapsed before the correct model was determined. Accurate spin Hamiltonian parameters have been determined from extensive ENDOR measurements at room temperature.... (Read more)
- 482. Phys. Lett. A 178, 205-208 (1993) , “A new ESR signal of intrinsic defects in electron-irradiated p-type GaAs”, Y. Q. JiaH. J. von BardelebenElectron spin resonance studies of p-type ([Zn] = 7 × 1017 cm−3) GaAs irradiated by 1.5 MeV electrons reveal a new signal at g = 1.99. The ratio of spin concentration to electron dose is determined as 3 cm−1, the highest among those reported in electron- irradiated GaAs. We... (Read more)
- 483. Phys. Rev. B 48, 4437 (1993) , “Identification of the BiGa heteroantisite defect in GaAs:Bi”, M. Kunzer, W. Jost, U. Kaufmann, H. M. Hobgood, R. N. ThomasGaAs lightly doped with the heaviest group-V atom, bismuth (Bi), has been studied by conventional electron-spin resonance (ESR) and by ESR detected via the magnetic-circular-dichroism (MCD) absorption. A new Bi-related sharp-line MCD band has been observed on which two MCD-ESR lines have been... (Read more)
- 484. Phys. Rev. B 48, 2418-2435 (1993) , “Structural relaxation of Pb defects at the (111)Si/SiO2 interface as a function of oxidation temperature: The Pb-generation-stress relationship”, A. StesmansElectron-spin-resonance (ESR) studies of intrinsic Pb defects at the (111)Si/SiO2 interface have been carried out as a function of oxidation temperature Tox for the range 22<ToxTox and high-Tox... (Read more)
- 485. Phys. Rev. B 48, 17878-17884 (1993) , “Electron-spin-resonance studies of donors in wurtzite GaN”, W. E. Carlos, J. A. Freitas Jr., M. Asif Khan, D. T. Olson, J. N. KuzniaElectron-spin-resonance (ESR) measurements have been performed on a series of wurtzite GaN films grown on sapphire substrates by low-pressure metal-organic chemical-vapor deposition. The sample set included films grown with both AlN and GaN buffer layers. The ESR signal results from residual donors... (Read more)
- 486. Phys. Rev. B 48, 17595 (1993) , “Nature of the native-defect ESR and hydrogen-dangling-bond centers in thin diamond films”, H. Jia, J. Shinar, D. P. Lang, M. PruskiThe X-band ESR of thin diamond films deposited from a mixture of 99.5% H2 and 0.5% CH4 is compared to those of films similarly prepared from D2-CD4 and H2-13CH4 mixtures. The main line and the satellites at ±7.2 G are... (Read more)
- 487. Phys. Rev. B 48, 15144-15147 (1993) , “Conduction-electron spin resonance in zinc-blende GaN thin films”, M. Fanciulli, T.Lei, T.D.MoustakasWe report electron-spin-resonance measurements on zinc-blende GaN. The observed resonance has an isotropic g value of 1.9533±0.0008 independent of temperature, a Lorentzian line shape, and a linewidth (18 G at 10 K) which depends on temperature. The spin-lattice relaxation time at 10 K was... (Read more)
- 488. Phys. Rev. B 47, 8816 (1993) , “Paramagnetic resonance of photoexcited N-V defects in diamond. II. Hyperfine interaction with the 14N nucleus”, X. -F. He, N. B. Manson, P. T. H. FiskHyperfine interactions associated with the 14N nucleus in the diamond N-V defect have been investigated using Raman-heterodyne techniques. The measured nuclear-magnetic-resonance (NMR) and electron-nuclear-double-resonance frequencies were well accounted for by the triplet-spin... (Read more)
- 489. Phys. Rev. B 47, 8809 (1993) , “Paramagnetic resonance of photoexcited N-V defects in diamond. I. Level anticrossing in the 3A ground state”, X. -F. He, N. B. Manson, P. T. H. FiskRaman-heterodyne-detected paramagnetic resonance has been used to study the level anticrossing in the 3A state of the N-V defect in diamond. The electron-paramagnetic-resonance (EPR) frequencies are well accounted for by a triplet-spin Hamiltonian. Comparison of the EPR spectra with the... (Read more)
- 490. Phys. Rev. B 47, 7025 (1993) , “Electron-Paramagnetic-Resonance Investigation of the Iron-Indium Pair in Silicon”, W. Gehlhoff, P. Emanuelsson, P. Omling, and H. G. GrimmeissA defect consisting of a substitutional indium and an interstitial iron ion in silicon has been studied using the electron-paramagnetic-resonance (EPR) technique. The defect is found to appear in two different configurations, where the iron ion occupies two different interstitial positions near the... (Read more)
- 491. Phys. Rev. B 47, 6363-6380 (1993) , “Electron paramagnetic resonance of multistable interstitial-carbonsubstitutional-group-V-atom pairs in silicon”, X. D. Zhan, G. D. WatkinsA total of five new electron paramagnetic resonance (EPR) centers are observed in electron-irradiated P-, As-, and Sb-doped silicon. Three are identified as arising from the neutral charge state of the stable configuration and two of the four metastable configurations of an... (Read more)
- 492. Phys. Rev. B 47, 3987 (1993) , “Evidence for an anti-structure-pair in GaAs generated by electron irradiation at room temperature obtained from optically detected electron-nuclear double resonance”, K. Krambrock and J.-M. SpaethThe microscopic structure of a paramagnetic arsenic antisite-related defect in GaAs electron irradiated at room temperature has been studied using optically detected electron-nuclear double resonance (ODENDOR). In addition to the ODENDOR lines of the nearest and next-nearest As ligands those of a Ga... (Read more)
- 493. Phys. Rev. B 47, 10899-10902 (1993) , “Defects in porous p-type Si: An electron-paramagnetic-resonance study”, H. J. von Bardeleben, D. Stievenard, A. Grosman, C. Ortega, J. SiejkaThe defects in p+ porous silicon of low and high porosity have been studied by using electron-paramagnetic-resonance (EPR) spectroscopy and compared with an impurity analysis obtained from nuclear reaction analysis (NRA). The EPR measurements show, in both high- and low-porosity samples,... (Read more)
- 494. Phys. Rev. Lett. 71, 557 (1993) , “Bond-Centered Muonium in Diamond: Resolved Nuclear Hyperfine Structure”, J. W. Schneider, R. F. Kiefl, K. H. Chow, S. Johnston, J. Sonier, T. L. Estle, B. Hitti, R. L. Lichti, S. H. Connell, J. P. E. Sellschop, C. G. Smallman, T. R. Anthony, W. F. BanholzerThe nuclear hyperfine structure of bond-centered muonium in 13C enriched diamond has been resolved using time-differential transverse-field muon spin rotation. The measured nearest-neighbor 13C hyperfine parameters are compared to theoretical values from a recent ab initio... (Read more)
- 495. Phys. Rev. Lett. 71, 117 (1993) , “Electron Paramagnetic Resonance of Molecular Hydrogen in Silicon”, P. Stallinga, T. Gregorkiewicz, and C. A. J. AmmerlaanIn briefly annealed silicon samples implanted with hydrogen and deuterium an electron paramagnetic resonance spectrum is detected. It is identified as arising from a hydrogen molecule oriented in the ?111? crystallographic direction and located most probably at an interstitial site. Such a result is... (Read more)
- 496. Phys. Rev. Lett. 70, 3816 (1993) , “Structure-Sensitive Spectroscopy of Transition-Metal-Hydrogen Complexes in Silicon”, P. M. Williams, G. D. Watkins, S. Uftring, and Michael StavolaSeveral centers that involve Pt and H have been introduced into n-type Si and studied by electron paramagnetic resonance and vibrational spectroscopy to provide unique structure-sensitive data for an H-passivated deep level impurity. Through the observation of Pt-H and -D hyperfine interactions, a... (Read more)
- 497. Phys. Rev. Lett. 70, 1723 (1993) , “Relationship between Stress and Dangling Bond Generation at the (111)Si/SiO2 Interface”, A. Stesmans.Electron spin resonance analysis of the intrinsic density [Pb] of interfacial Pb (?Si?Si3) defects in thermal (111)Si/SiO2 as a function of oxidation temperature Tox in the range 200–1140°C reveals a close linear correlation with the average... (Read more)
- 498. Physica B 185, 228-233 (1993) , “Study of defects in wide band gap semiconductors by electron paramagnetic resonance”, M. Fanciulli, T. D. MoustakasDefects in diamond, baron nitride and gallium nitride, grown by various deposition methods, were investigated by EPR measurements. In diamond films the observed EPR signal has a g value of 2.0028, peak-to-peak linewidth of 3–5 Gauss and spin-lattice relaxation time, at 293 K, of 10-6 s. In... (Read more)
- 499. Solid State Commun. 88, 887-889 (1993) , “Submillimeter EPR evidence for the As antisite defect in GaAs”, R. J. Wagner, J. J. Krebs and G. H. StaussA. M. WhiteA new EPR spectrum has been observed in semi-insulating GaAs with a sub- millimeter laser magnetic resonance spectrometer. The spectrum is isotropic with g= 2.04 ± 0.01 at v=11.236cm-1. The hyperfine interaction parameter |A| (I=3/2) is 0.090 ± 0.001 cm-1.The spectrum is attributed to the As antisite defect in GaAs and the parameters are compatible with the P antisite defect in GaP. (Read more)
- 500. Appl. Phys. Lett. 60, 718 (1992) , “Optically detected electron paramagnetic resonance of arsenic antisites in low-temperature GaAs layers”, H.-J. Sun, G. D. Watkins, F. C. Rong, L. Fotiadis, E. H. PoindexterArsenic antisites in GaAs layers grown by molecular-beam epitaxy at low substrate temperatures (~200 °C) were observed using electron paramagnetic resonance (EPR), magnetic circular dichroism in absorption (MCDA), and MCDA-detected EPR. This observation confirms that there is a MCDA band... (Read more)
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