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- 301. Phys. Rev. B 57, 1607 (1998) , “Electronic structure of the deep boron acceptor in boron-doped 6H-SiC”, A. v. Duijn-Arnold, T. Ikoma, O. G. Poluektov, P. G. Baranov, E. N. Mokhov, J. SchmidtA high-frequency (95 GHz) and conventional-frequency (9.3 GHz) pulsed electron paramagnetic resonance and electron-nuclear double resonance (ENDOR) study is reported on the deep boron acceptor in 6H-SiC. The results support a model in which the deep boron acceptor consists of a boron on a silicon... (Read more)
- 302. Phys. Rev. B 57, 10030 (1998) , “Electrical Activity of Interfacial Paramagnetic Defects in Thermal (100) Si/SiO2”, A. Stesmans, V. V. Afanas’ev.The correlation between the detrimental electrically active interface traps and the electron-spin-resonance-active point defects Pb0 and Pb1 (unpaired Si orbitals) was studied through controlled variation, both relatively and absolutely, of the defect bath densities. Unlike... (Read more)
- 303. Phys. Rev. Lett. 80, 423 (1998) , “Chen et al. Reply:”, W. M. Chen, O. O. Awadelkarim, B. Monemar, J. L. Lindström, G. S. Oehrlein.A Reply to the Comment by P. Stallinga and B. Bech Nielsen. (Read more)
- 304. Phys. Rev. Lett. 80, 422 (1998) , “Comment on “Microscopic Identification and Electronic Structure of a Di-Hydrogen–Vacancy Complex in Silicon by Optical Detection of Magnetic Resonance””, P. Stallinga and B. Bech NielsenA Comment on the Letter by W. M. Chen, et al., Phys. Rev. Lett. 64, 3042 (1990). The authors of the Letter offer a Reply. (Read more)
- 305. Phys. Rev. Lett. 80, 317-320 (1998) , “Experimental Evidence for Frenkel Defect Formation in Amorphous SiO2 by Electronic Excitation”, H. Hosono, H. Kawazoe, N. MatsunamiConcentrations of defects in amorphous SiO2 created by implantation of 10 MeV protons were examined. The depth profile of Si-Si bonds, E? centers, or peroxy radicals (PORs) was close to that of electronic energy loss. Interstitial O2 molecules were identified and... (Read more)
- 306. Phys. Rev. Lett. 80, 1489 (1998) , “Electron Exchange Interaction in S = 1 Defects Observed by Level Crossing Spin Dependent Microwave Photoconductivity in Irradiated Silicon”, R. Laiho, M. M. Afanasjev, M. P. Vlasinko, L. S. Vlasenko.Spin dependent change of photoconductivity is observed for the first time at magnetic field induced crossing of a ground singlet (S = 0) and an excited triplet (S = 1) state levels of structural defects in irradiated silicon. These defects include two electrons localized on points of trigonal... (Read more)
- 307. Phys. Solid State 40, 195 (1998) , “Depth Distribution of Point Defects in Si Bombarded by High-Energy N5+ and Si5+ Ions”, A. V. Dvurechenski?, A. A. Karanovich, R. Grtzschel, F. Herrmann, R. Kegler, A. V. Rybin.Electron spin resonance has been used to study the depth distribution of point defects in Si samples bombarded by N5+ (E=16 MeV) and Si5+ (E=26.8 MeV) ions at 175 and 300 K in the dose range (4–8)×1015 cm-2. It was established that unlike the implantation of moderate-energy Si ions (E ∼ 100 keV), the depth distributions of planar tetravacancies in samples bombarded by ions at 300 K under these conditions have two maxima. The experimental results indicate that the tetravacancy density maximum closer to the surface is formed as a result of secondary defect formation processes. No continuous amorphous layer was observed in the bulk of any of the Si samples. This experimental observation is evidence of defect annealing which takes place when high-energy ions are implanted in Si. (Read more)
- 308. Phys. Solid State 40, 1648 (1998) , “Electron paramagnetic resonance of defects with metastable properties in crystalline GaN”, P. G. Baranov, I. V. Il'in, E. N. Mokhov, V. A. KhramtsovAn EPR study of GaN revealed the presence of defects exhibiting metastable properties. EPR spectra of two centers (ii1a and ii1b) with axial symmetry along the hexagonal axis of the crystal, which have strongly anisotropic g factors, were observed. The anisotropy of the spectra decreases, and the line shape changes, with increasing temperature. The spectra of the ii1a and ii1b centers disappear at 25 and 50 K, respectively. Subsequent cooling of the samples does not restore the EPR signals, which implies that one observes here phenomena inherent in defects with metastable states. To restore EPR signals, one has to warm the samples to room temperature under very specific conditions. The possible microstructure of the discovered defects is discussed. (Read more)
- 309. phys. stat. sol. (a) 168, 73 (1998) , “Self-Interstitials in Silicon Irradiated with Light Ions”, B. N. Mukashev, Kh. A. Abdullin, Yu. V. Gorelkinskii.The behavior of self-interstitials in silicon which was irradiated with light ions (protons and -particles) and electrons was explored by monitoring known impurity interstitial centers (Ci, Ali, (Si-O)i) with deep level transient spectroscopy (DLTS) and electron... (Read more)
- 310. phys. stat. sol. (b) 210, 753 (1998) , “Identification of a Donor State of Substitutional Cadmium in Silicon”, A. Näser, W. Gehlhoff, H. Overhof, R. A. Yankov.The structural and electronic properties of cadmium in p-type silicon were studied by means of EPR. Cd was diffused in one set of samples whereas in a second set we used high energy implantations in the MeV range for doping, followed by a high temperature annealing step at 1200 (Read more)
- 311. phys. stat. sol. (b) 210, 747 (1998) , “Nonlinear Zeeman Splitting of the Si:Be - s Acceptor Ground State: Influence of the p1/2 Split-Off Valence Band?”, H. Schroth, K. Lassmann, Chr. Borgmann, H. Bracht.Electric-dipole spin resonance (EDSR) spectra at 24, 34, and 60 GHz of Si:Be show six absorption lines with characteristics similar to those previously observed for the +8 ground state of group-III single acceptors. From the dependence on Fermi level position we attribute these... (Read more)
- 312. phys. stat. sol. (b) 210, 631 (1998) , “Confinement Effects of Phosphorus Donors Embedded in Silicon Microcrystals”, B. J. Pawlak, T. Gregorkiewicz, C. A. J. Ammerlaan.Due to their extended electronic structure shallow donors are believed to be very sensitive to confinement effects. Our interest is to investigate the influence of size on the properties of shallow donor phosphorus in mechanically milled silicon microcrystals. The crystallinity of powders is... (Read more)
- 313. phys. stat. sol. (b) 210, 545 (1998) , “EPR Study of Hydrogen-Related Radiation-Induced Shallow Donors in Silicon”, V. P. Markevich, T. Mchedlidze, M. Suezawa, L. I. Murin.An electron paramagnetic resonance (EPR) study of hydrogen-related radiation-induced shallow donors in silicon has been performed. Three species of this donor family (D1-D3) were observed earlier by means of infrared absorption measurements in hydrogenated Czochralski-grown Si (Cz-Si) crystals after... (Read more)
- 314. phys. stat. sol. (b) 210, 539 (1998) , “Individual Thermal Donor Species Studied with High-Field Magnetic Resonance”, R. Dirksen, T. Gregorkiewicz, C. A. J. Ammerlaan.Thermal donors generated in p-type boron-doped Czochralski-grown silicon by a 450 °C heat treatment have been studied by high-field magnetic resonance spectroscopy. The experiments were conducted at a microwave frequency of 140 GHz and in a magnetic field of approximately 5 T. The symmetry of the... (Read more)
- 315. phys. stat. sol. (b) 210, 415-427 (1998) , “The Microscopic and Electronic Structure of Shallow Donors in SiC”, S. Greulich-WeberNitrogen donors in 6H-, 4H- and 3C-SiC were investigated using conventional electron paramagnetic resonance (EPR) and electron nuclear double resonance (ENDOR) and the experimental results are discussed. An attempt is presented to interpret the experimentally found large differences in hyperfine... (Read more)
- 316. Semicond. Sci. Technol. 13, 725 (1998) , “Electron Nuclear Double Resonance Investigation of Iron-Acceptor Pairs in Silicon”, J. –M. Spaeth, S. Martini, S. Greulich-Weber.With stationary electron nuclear double resonance (ENDOR) the two - pairs having trigonal and orthorhombic symmetry, respectively, and the trigonal - pair have been investigated. The hyperfine and quadrupole interactions with the interstitial and the acceptor nuclei and , respectively, have been... (Read more)
- 317. Semiconductors 32, 375 (1998) , “Observation of Low-Temperature Diffusion of Aluminum Impurity Atoms in Hydrogen-Implanted Silicon”, Yu. V. Gorelkinski?, B. N. Mukashev, Kh. A. Abdullin.
- 318. Appl. Phys. Lett. 71, 1703 (1997) , “Al–Al pair in silicon: Evidence for long-range hydrogen-enhanced aluminum migration”, Kh. A. Abdullin, B. N. Mukashev, and Yu. V. GorelkinskiiIn this letter, we present results of electron paramagnetic resonance studies of new defects (labeled Si-AA15 and Si-AA16) incorporated aluminum atoms. The AA15 defect is created in hydrogen-doped silicon by low temperature (~ 80 K) irradiation, and an 27Al (100% abundant, I = 5/2)... (Read more)
- 319. Appl. Phys. Lett. 70, 1137 (1997) , “In situ electron-spin-resonance measurements of film growth of hydrogenated amorphous silicon”, Satoshi Yamasaki, Takahide Umeda, Junichi Isoya, and Kazunobu TanakaIn situ electron-spin-resonance (ESR) measurements of film growth of hydrogenated amorphous silicon (a-Si:H) using a remote hydrogen plasma technique have been performed. The Si dangling-bond signal in a-Si:H during and after deposition has been detected, in addition to the... (Read more)
- 320. Appl. Surf. Sci. 117-118, 574 (1997) , “ESR characterization of defects produced in diamond surface by B ion implantation”, Y. Show, F. Matsuoka, T. Izumi, M. Deguchi, M. Kitabatake, H. Sakakima, T. Hirao, Y. Mori, A. Hatta, T. Ito, A. HirakiThe defects produced by B ion implantation into CVD diamond films have been investigated by the electron spin resonance (ESR) method. The ESR analysis revealed the Pac-center (g = 2.003, ΔHPP = 10−16 Oe), which originates from carbon dangling bonds in the non-diamond phase carbon... (Read more)
- 321. Diamond Relat. Mater. 6, 778 (1997) , “Minimization of the defects concentration from boron incorporation in polycrystalline diamond films”, E. Colineau, E. Gheeraert, A. Deneuville, J. Mambou, F. Brunet and J. P. LagrangeElectron spin resonance, Raman diffusion and X-ray diffraction spectra of boron-doped diamond thin films were recorded. Both the signals related to particular defects (ESR, luminescence) or those related to the total concentration of defects (linewidth of the diamond Raman line, width of the X-ray... (Read more)
- 322. Diamond Relat. Mater. 6, 516 (1997) , “Nitrogen doping of diamond by ion implantation”, R. Kalish, C. Uzan-Saguy, B. Philosoph, V. Richter, J. P. Lagrange, E. Gheeraert, A. Deneuville, A. T. CollinsNitrogen doping is used to achieve field emission from diamond, and hence it is important to be able to dope diamond with nitrogen in a controlled way, such as that offered by ion implantation. The procedure developed for optimising p-type doping of diamond by B ion-implantation (cold implantation... (Read more)
- 323. Diamond Relat. Mater. 6, 356 (1997) , “ESR studies of incorporation of phosphorus into high-pressure synthetic diamond”, J. Isoya, H. Kanda, M. Akaishi, Y. Morita, T. OhshimaElectron spin resonance (ESR) signals associated with phosphorus, which should give microscopic evidence of incorporation of phosphorus into the lattice of diamond, have been searched in high-pressure synthetic diamond crystals. In a crystal grown from phosphorus catalyst, a new ESR spectrum... (Read more)
- 324. J. Appl. Phys. 82, 3456 (1997) , “Carbon-Related Platinum Defects in Silicon: An Electron Paramagnetic Resonance Study of High Spin States”, O. Scheerer, M. Höhne, U. Juda, and H. RiemannIn this article, we report about complexes in silicon investigated by electron paramagnetic resonance (EPR). In silicon doped with C and Pt we detected two different complexes: cr-1Pt (cr: carbon-related, 1Pt: one Pt atom) and cr-3Pt. The complexes have similar EPR properties. They show a trigonal... (Read more)
- 325. J. Appl. Phys. 82, 1201 (1997) , “Electron paramagnetic resonance imaging of the distribution of the single substitutional nitrogen impurity through polycrystalline diamond samples grown by chemical vapor deposition”, D. F. Talbot-Ponsonby, M. E. Newton, and J. M. BakerThe distribution of the single substitutional nitrogen impurity (NS0" align="middle">) through the thickness of diamond films grown by chemical vapor deposition has been studied using Electron Paramagnetic Resonance imaging. The design of an Electron Paramagnetic Resonance imaging... (Read more)
- 326. J. Appl. Phys. 81, 7468 (1997) , “Electron Paramagnetic Resonance of Porous Silicon: Observation and Identification of Conduction-Band Electrons”, C. F. Young, E. H. Poindexter, G. J. Gerardi.New features in electron paramagnetic resonance (EPR) of porous silicon have been examined here. A new isotropic EPR center was observed at g=1.9995(1) at T=4.2 K, in both p-type and n-type porous silicon. By comparing its g value with those of shallow donors in... (Read more)
- 327. J. Appl. Phys. 81, 234 (1997) , “Characterization of textured polycrystalline diamond by electron spin resonance spectroscopy”, C. F. O. Graeff, C. E. Nebel, M. Stutzmann, A. Flöter, R. ZachaiElectron spin resonance (ESR) is shown to be a useful and versatile technique for the detection and characterization of preferred orientation effects in polycrystalline diamond films. A nitrogen related center known as P1 is used for this purpose. The ESR signal coming from this center is... (Read more)
- 328. J. Appl. Phys. 81, 1109 (1997) , “Stress-induced alignment of NL8 thermal donors in silicon: Energetics and kinetics”, J. M. Trombetta, G. D. Watkins, J. Hage, P. Wagner.Preferential alignment is produced for the NL8 thermal double donors (TDDs) when uniaxial stress is applied during their formation at ~ 450 °C. The recovery kinetics reveal that they can reorient readily on the time scale of their lifetime and their individual alignments therefore reflect the... (Read more)
- 329. J. Cryst. Growth 174, 751-756 (1997) , “Investigation of the interfacial quality and the influence of different substrates in ZnSe homoepitaxy”, H. Wenisch, T. Behr, J. Kreissl, K. Schüll, D. Siche, H. Hartmann , D. HommelZnSe substrates grown by the seeded chemical vapour transport and recrystallization as well as by the Bridgman method are compared for their use in molecular beam epitaxy. Intrinsic and extrinsic defects were analysed by low-temperature photoluminescence and especially by... (Read more)
- 330. J. Phys. D: Appl. Phys. 30, 1790 (1997) , “The dependences of ESR line widths and spin-spin relaxation times of single nitrogen defects on the concentration of nitrogen defects in diamond”, J. A. van Wyk, E. C. Reynhardt, G. L. High, I. Kiflawi
- 331. J. Phys.: Condens. Matter 9, 3299 (1997) , “Reply to the Comment on ‘Creation of Pb Interface Defects in Thermal Si/SiO2 through Annealing’”, A. Stesmans, V. V. Afanas’ev.Regarding the electron spin resonance work (Stesmans and Afanas'ev (1996) J. Phys.: Condens. Matter 8 L505) reporting on a newly resolved interface defect generation mechanism operative during postoxidation annealing in inert ambient above , Stathis ( J. Phys.: Condens.... (Read more)
- 332. J. Phys.: Condens. Matter 9, 3297 (1997) , “Comment on ‘Creation of Pb Interface Defects in Thermal Si/SiO2 through Annealing’”, J. H. Stathis.Some suggestions are offered to explain the discrepancies between the work of Stesmans and others. (Read more)
- 333. Jpn. J. Appl. Phys. 36, 7035 (1997) , “Improved Properties of Silicon Nitride Films Prepared by the Catalytic Chemical Vapor Deposition Method”, S. Okada, H. MatsumuraThe properties of silicon nitride (SiNx) films produced by the catalytic chemical vapor deposition (cat-CVD) method are extensively studied for device application. In the cat-CVD method, the deposition gases such as a silane (SiH4) and ammonia (NH3) gas... (Read more)
- 334. Jpn. J. Appl. Phys. 36, 6807 (1997) , “Relation between the Metastability and the Configuration of Iron-Acceptor Pairs in Silicon”, H. Takahashi, M. Suezawa, K. Sumino.To determine the energy differences between the first and second nearest-neighbor iron (Fe)-acceptor pairs in silicon, the generation and annihilation processes of these pairs were investigated by means of electron spin resonance (ESR). Isochronal annealing of the Fe-doped specimen revealed... (Read more)
- 335. Nucl. Instrum. Methods Phys. Res. A 395, 76-80 (1997) , “Optical deep-level transient characterisation of gamma-irradiated semi-insulating gallium arsenide”, Say Teng Lai, Dimitri Alexiev, Claude Schwab , Ian DonnellyA unique optical deep-level transient conductance spectroscopy (ODLTCS) technique has been employed for studying undoped semi-insulating (SI) GaAs material. In the undoped SI GaAs, the Fermi-level first shifts towards gamma irradiation of the conduction band at low γ fluence and then towards... (Read more)
- 336. Nucl. Instrum. Methods Phys. Res. B 127-128, 217 (1997) , “Defects in ion implanted diamond films (ESR study)”, Yoshiyuki Show, Tomio Izumi, Masahiro Deguchi, Makoto Kitabatake, Takashi Hirao, Yusuke Morid, Akimitsu Hatta, Toshimichi Ito and Akio HirakiThe defect structures in ion implanted diamond films have been studied by the electron spin resonance (ESR) method. Two kinds of paramagnetic defect centers were observed in ion implanted layers. One was a carbon dangling bond that existed in crystalline diamond (g = 2.003, ΔHpp = 3 Oe), and... (Read more)
- 337. Phys. Rev. B 56, R12695 (1997) , “Silicon Incorporation in a Shallow Donor Center in Hydrogenated Czochralski-Grown Si Crystals: An EPR Syudy”, V. P. Markevich, T. Mchedlidze, and M. SuezawaAn electron paramagnetic resonance (EPR) signal, labeled TU1, has been found in hydrogenated Czochralski-grown Si crystals after irradiation with fast electrons and annealing at 300–400 °C. An isotropic g factor of 1.9987 indicates the shallow donor nature of the defect giving rise to the signal.... (Read more)
- 338. Phys. Rev. B 56, 7422 (1997) , “High-field spin resonance of weakly bound electrons in GaAs”, M. Seck, M. Potemski, and P. WyderElectron spin resonance (ESR) of shallow donor electrons in n-type GaAs has been observed by means of direct detection of microwave absorption at magnetic fields of 6–11 T. The ESR structure is smeared out over a magnetic field range of up to 1 T. The line shape is strongly asymmetric and depends... (Read more)
- 339. Phys. Rev. B 56, 7384 (1997) , “Negatively charged Si vacancy in 4H SiC: A comparison between theory and experiment”, T. Wimbauer, B. K. Meyer, A. Hofstaetter, A. Scharmann, H. OverhofWe use electron paramagnetic resonance and electron nuclear double resonance to identify the negatively charged Si vacancy in neutron-irradiated 4H SiC. The identification is based on resolved ligand hyperfine interactions with carbon and silicon nearest and next nearest neighbors and on the... (Read more)
- 340. Phys. Rev. B 56, 6392 (1997) , “EPR identification of the ?100?-split [B-N]+ interstitialcy in diamond”, J. Isoya, H. Kanda, Y. MoritaBased on the 11B and 14N hyperfine interactions determined by using the electron paramagnetic resonance technique, the NIRIM-4 center in electron-irradiated boron-doped synthetic diamond crystal has been identified as a ?100?-split [B-N]+ interstitialcy. The... (Read more)
- 341. Phys. Rev. B 56, 4620 (1997) , “Copper-Related Defects in Silicon: Electron-Paramagnetic-Resonance Identification”, P. N. Hai, T. Gregorkiewicz, C. A. J. Ammerlaan, D. T. Don.In this paper the observation of two electron-paramagnetic-resonance spectra, both present in p-type silicon samples after doping with silver, is reported. The two centers show a symmetry lower than cubic and have an effective electron spin S=1/2. In view of the detected hyperfine interaction with... (Read more)
- 342. Phys. Rev. B 56, 4614 (1997) , “Electron-Paramagnetic-Resonance Study of Silver-Induced Defects in Silicon”, P. N. Hai, T. Gregorkiewicz, C. A. J. Ammelaan, D. T. Don.In this paper two electron-paramagnetic-resonance spectra are reported in silicon doped with silver in a water vapor atmosphere. These centers, labeled Si-NL56 and Si-NL57, show the orthorhombic-I and trigonal symmetries, respectively, and an effective electron spin S=1/2. Based on studies with... (Read more)
- 343. Phys. Rev. B 56, 16033 (1997) , “Reply to "Comment on ‘Electronic structure of the N-V center in diamond: Theory’"”, A. Lenef, S. C. RandWe present insights into the electronic structure and relaxation of N-V color centers in diamond which support the contention that Jahn-Teller effects may play a very significant role in the excited E state. We also consider several opposing arguments, but show that the unusual relaxation behavior... (Read more)
- 344. Phys. Rev. B 56, 16031 (1997) , “Comment on "Electronic structure of the N-V center in diamond: Theory"”, J. P. Goss, R. Jones, P. R. Briddon, G. Davies, A. T. Collins, A. Mainwood, J. A. van Wyk, J. M. Baker, M. E. Newton, A. M. Stoneham, S. C. LawsonIt is argued that the model advanced by Lenef and Rand [Phys. Rev. B 53, 13 441 (1996)] for the nitrogen-vacancy center in diamond, exhibiting the 1.945-eV luminescence is incorrect. Lenef and Rand argue that the electronic ground state consists of two electrons occupying a1 states... (Read more)
- 345. Phys. Rev. B 56, 15685 (1997) , “Zeeman Study of the Orthorhombic FeIn Pair Center in Silicon”, Mats Kleverman and Per TidlundThe excitation spectrum of the neutral orthorhombic (C2v) FeIn center in silicon has been studied by Fourier transmission infrared spectroscopy. The Zeeman results show that the electronic structure of the ground and excited state is similar. Both comprise two nearby Kramers doublets... (Read more)
- 346. Phys. Rev. B 56, 10221 (1997) , “Optically detected electron-paramagnetic-resonance investigations of the substitutional oxygen defect in gallium arsenide”, F. K. Koschnick, M. Linde, M. V. B. Pinheiro, and J.-M. SpaethThe substitutional oxygen defect in GaAs has been investigated with magnetic circular dichroism of the absorption, optically detected electron paramagnetic resonance, and optically detected electron-nuclear double resonance (ODENDOR). The ODENDOR spectra can be explained with an oxygen atom... (Read more)
- 347. Phys. Rev. B 55, 16245 (1997) , “Electron Paramagnetic Resonance of Conduction-Band Electrons in Silicon”, C. F. Young, E. H. Poindexter, G. J. Gerardi, W. L. Warren, D. J. Keeble.The g value of conduction-band electrons in silicon was properly determined by using electron paramagnetic resonance. A linear empirical relationship was first found between the g values and the thermal ionization energies of several well-known group-V substitutional shallow donors in silicon. An... (Read more)
- 348. Phys. Rev. Lett. 79, 1507 (1997) , “Identification of the Silicon Vacancy Containing a Single Hydrogen Atom by EPR”, B. Bech Nielsen, P. Johannesen, P. Stallinga, K. Bonde Nielsen
- 349. phys. stat. sol. (a) 162, 95-151 (1997) , “EPR and ENDOR Investigations of Shallow Impurities in SiC Polytypes”, S. Greulich-WeberInvestigations of nitrogen donors in 6H-, 4H- and 3C-SiC using conventional electron paramagnetic resonance (EPR), electron nuclear double resonance (ENDOR) and optical detection of EPR and ENDOR as well as optical absorption and emission spectroscopy are reviewed and critically discussed. An... (Read more)
- 350. Rev. Sci. Instrum. 68, 2511 (1997) , “Sensitivity enhancement in magnetic circular dichroism of absorption-detected electron paramagnetic resonance with a mirror cavity”, F. K. KoschnickA mirror cavity was developed to improve the signal to noise (S/N) ratio of the measurement of the magnetic circular dichroism of the absorption (MCDA) and of the MCDA-detected electron paramagnetic resonance (EPR). In this cavity the measurement light beam passes through the sample several times... (Read more)
- 351. Rev. Sci. Instrum. 68, 1823 (1997) , “Magnetic Resonance Force Detection and Spectroscopy of Electron Spins in Phosphorus-Doped Silicon”, K. Wago, O. Züger, J. Wegener, R. Kendrick, C. S. Yannoni, and D. RugarElectron spin resonance (ESR) of phosphorus-doped silicon was detected using a low temperature magnetic resonance force microscope (MRFM). Force-detected ESR spectra were obtained using an amplitude or frequency modulated microwave field to cyclically saturate the spin magnetization. For a sample... (Read more)
- 352. Semicond. Sci. Technol. 12, 1404 (1997) , “Shallow Thermal Donors Associated with H, Al and N in Annealed Czochralski Silicon Distinguished by Infrared Spectroscopy”, R. E. Pritchard, M. J. Ashwin, J. H. Tucker, R. C. Newman, E. C. Lightowlers, T. Gregorkiewicz, I. S. Zevenbergen, C. A. J. Ammerlaan, R. Falster, M. J. Binns.Electronic transitions of shallow thermal donors (STDs) in aluminium-doped Czochralski (CZ) Si annealed at C have different energies from those of STDs observed in annealed, hydrogenated boron-doped CZ Si. A third type of STD is observed in boron-doped Si pre-heated in nitrogen gas and annealed... (Read more)
- 353. Solid State Commun. 102, 715-720 (1997) , “Nuclear spin relaxation in AlGaAs/GaAs heterostructures observed via optically detected magnetic resonance (ODMR) experiments”, M. Schreiner, H. Pascher, G. Denninger, S. A. Studenikin, G. Weimann and R. LöschThe resonant field at which an electron spin resonance (ESR) occurs may be shifted by an effective magnetic field, which is due to spin polarized nuclei. This shift, known as Overhausershift, is caused by the field of all polarized nuclei without respect to their isotopic number. Irradiation of the... (Read more)
- 354. Solid State Commun. 102, 595 (1997) , “Thermally Activated Change of Symmetry of Carbon Related Center in Irradiated Silicon”, M. M. Afanasjev,R. Laiho, L. S. Vlasenko and M. P. VlasenkoTwo electron paramagnetic resonance (EPR) spectra related to the excited spin-1 state of a carbon-silicon-carbon complex are detected in irradiated silicon with microwave spin dependent photoconductivity measurements. They indicate transformation of the complex from monoclinic to trigonal symmetry... (Read more)
- 355. Solid State Commun. 101, 611-615 (1997) , “Identification of iron transition group trace impurities in GaN bulk crystals by electron paramagnetic resonance”, P. G. Baranov, I. V. Ilyin and E. N. MokhovWe report on the observation of electron paramagnetic resonance of iron, manganese and nickel trace impurities in bulk GaN crystals grown by the sublimation sandwich method. The resolved hyperfine structure due to interaction with 55Mn (I = 5/2) nuclei has been observed in GaN, allowing unambiguous... (Read more)
- 356. Solid State Commun. 101, 219-223 (1997) , “Compensation center of Cr3+ in GaAs codoped with Cr and In for obtaining a semi-insulating property”, Y. J. Park, T. H. Yeom, I. -W. Park, S. H. Choh , S. -K. MinThe dependences of Cr2+ and Cr3+ electron paramagnetic resonance (EPR) signals as a function of Cr concentration have been investigated in conjunction with clarifying the atomic configuration for obtaining semi-insulating properties in a vertical gradient freeze (VGF)-GaAs single crystal codoped... (Read more)
- 357. Appl. Phys. Lett. 69, 3854 (1996) , “Electron Paramagnetic Resonance of Erbium Doped Silicon”, J. D. Carey, J. F. Donegan, R. C. Barklie, F. Priolo, G. Frenzò, S. Coffa.Electron paramagnetic resonance measurements have been made on samples of float zone silicon, implanted with 1015 Er/cm2. One sample was coimplanted with oxygen to give an impurity concentration of 1020 O/cm3 and 1019 Er/cm3. In this... (Read more)
- 358. Appl. Phys. Lett. 69, 3836 (1996) , “Electron paramagnetic resonance characterization of diamond films fabricated with different methane concentrations”, D. J. Keeble, B. RamakrishnanElectron paramagnetic resonance (EPR) studies were performed on thin diamond films fabricated by hot-filament chemical vapor deposition using methane concentrations varying from 0.25% to 5%. The bulk spin concentration and the peak to peak linewidth for the characteristic g=2.0027(2) EPR... (Read more)
- 359. Appl. Phys. Lett. 69, 3215 (1996) , “Optical excitation of paramagnetic nitrogen in chemical vapor deposited diamond”, C. F. O. Graeff, E. Rohrer, C. E. Nebel, M. Stutzmann, H. Güttler, R. ZachaiInvestigations of polycrystalline chemical vapor deposited diamond films by electron-spin-resonance (ESR), light-induced (L)ESR, and the constant photoconductivity method have identified dispersed substitutional nitrogen (P1 center) as the main paramagnetic form of N incorporated in the CVD diamond.... (Read more)
- 360. Appl. Phys. Lett. 69, 2252 (1996) , “Hole traps in oxide layers thermally grown on SiC”, V. V. Afanas'ev and A. StesmansHole trapping in the oxides thermally grown on different polytypes of SiC (3C, 4H, 6H) was studied using photogeneration of charge carriers in SiO2 and electron-spin-resonance spectroscopy. Oxygen vacancy defects were found to be the dominant hole traps in the oxide. Generation of... (Read more)
- 361. Appl. Phys. Lett. 68, 403 (1996) , “Correlation between photoluminescence and oxygen vacancies in ZnO phosphors”, K. Vanheusden, C. H. Seager, W. L. Warren, D. R. Tallant, and J. A. VoigtBy combining electron paramagnetic resonance (EPR), optical absorption, and photoluminescence (PL) spectroscopy, a strong correlation is observed between the green 510 nm emission, the free-carrier concentration, and the density of singly ionized oxygen vacancies in commercial ZnO phosphor powders.... (Read more)
- 362. Appl. Phys. Lett. 68, 2723 (1996) , “Revision of H2 passivation of Pb interface defects in standard (111)Si/SiO2”, A. Stesmans.Passivation with molecular H2 of Pb interface defects in thermal (111)Si/SiO2 (dry; 870 °C) over extended temperature (TH) and time (tH) ranges unveil nonexponential decay of [Pb] vs... (Read more)
- 363. Appl. Phys. Lett. 68, 2123 (1996) , “Concentration of paramagnetic centers in boron doped polycrystalline diamond films”, E. Colineau, A. Deneuville, J. Mambou, and E. GheeraertThough no boron signal is identified, with respect to their boron content the narrow and broad components of the electron spin resonance signal in boron doped polycrystalline film decrease from 1018 to 1016 cm 3. This is ascribed to two different structural... (Read more)
- 364. Appl. Phys. Lett. 68, 2076 (1996) , “Passivation of Pb0 and Pb1 Interface Defects in Thermal (100) Si/SiO2 with Molecular Hydrogen”, A. Stesmans.It is found that the passivation of both the Pb0 and Pb1 defects in (100)Si/SiO2 (grown at < 750 °C) with molecular H2 may well be described by the same defect- H2 reaction-limited kinetic model applying to... (Read more)
- 365. Appl. Phys. Lett. 68, 1102 (1996) , “Electrical Detection of Electron Nuclear Double Resonance in Silicon”, B. Stich, S. Greulich-Weber, J. –M. Spaeth.Electrical detection of electron nuclear double resonance (EDENDOR) is demonstrated using shallow P donors in silicon. The EDENDOR spectra are compared with conventional ENDOR spectra. With EDENDOR, both the 31P hyperfine as well as 29Si superhyperfine interactions could be... (Read more)
- 366. Diamond Relat. Mater. 5, 1113 (1996) , “Spatial distribution of impurity defects in synthetic diamonds obtained by the BARS technology1”, A. Yelisseyev, V. Nadolinny, B. Feigelson, S. Terentyev, S. NosukhinLuminescence and optical transmission topography reveal the inhomogeneities in distribution of impurity nitrogen and nickel-related defects in synthetic diamonds obtained in high-pressure apparatus of the split-sphere type (Russian acronym: BARS). Owing to considerable supersaturations and... (Read more)
- 367. J. Appl. Phys. 80, 6198 (1996) , “Recombination-enhanced Fe atom jump between the first and the second neighbor site of Fe–acceptor pair in Si”, S. Sakauchi, M. Suezawa, K. Sumino, H. Nakashima.We studied the recombination-enhanced Fe atom jump between the first (1st) and second (2nd) neighbor sites of FeAl and FeB pairs in Si. We first annealed specimens at 80 °C to generate Feacceptor pairs after doping of Fe. Concentrations of the 1st and 2nd neighbor... (Read more)
- 368. J. Appl. Phys. 80, 5234 (1996) , “Electron paramagnetic resonance of Nb-doped BaTiO3 ceramics with positive temperature coefficient of resistivity”, S. Jida, T. MikiParamagnetic centers in Nb-doped BaTiO3 ceramics are measured at 77500 K by electron paramagnetic resonance (EPR) for investigating the role of the centers on the well-known positive temperature coefficient of resistivity (PTCR) effect (PTCR at the Curie temperature). EPR detects... (Read more)
- 369. J. Appl. Phys. 80, 3435 (1996) , “Oxygen-Related 1-Platinum Defects in Silicon: An Electron Paramagnetic Resonance Study”, U. Juda, O. Scheerer, M. Höhne, H. Riemann, H.-J. Schilling, J. Donecker, and A. GerhardtA monoclinic 1-platinum defect recently detected was investigated more thoroughly by electron paramagnetic resonance (EPR). The defect is one of the dominating defects in platinum doped silicon. With a perfect reproducibility it is observed in samples prepared from n-type silicon as well as... (Read more)
- 370. J. Appl. Phys. 79, 9250 (1996) , “Defect-dipole alignment and tetragonal strain in ferroelectrics”, W. L. Warren, G. E. Pike, K. Vanheusden, D. Dimos, B. A. Tuttle, J. RobertsonWe show the alignment of defect dipoles along the direction of the spontaneous polarization in polycrystalline Pb(Zr,Ti)O3 and BaTiO3 ferroelectric ceramics using electron paramagnetic resonance (EPR). The alignment is demonstrated via orientation dependent paramagnetic centers... (Read more)
- 371. J. Appl. Phys. 79, 7983-7990 (1996) , “Mechanisms behind green photoluminescence in ZnO phosphor powders”, K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, B. E. GnadeWe explore the interrelationships between the green 510 nm emission, the free-carrier concentration, and the paramagnetic oxygen-vacancy density in commercial ZnO phosphors by combining photoluminescence, optical-absorption, and electron-paramagnetic-resonance spectroscopies. We find that the green... (Read more)
- 372. J. Lumin. 66&67, 462 (1996) , “Spin-Dependent Dynamical Processes of Excited States in Semiconductors”, J. –M. Spaeth.Semiconductors with donors and acceptors can be brought into excited states by illumination with above-band-gap light. In a magnetic field, the recombination of donor electrons and acceptor holes is spin-dependent and can be used to detect electron paramagnetic resonance electrically (EDEPR).... (Read more)
- 373. J. Phys.: Condens. Matter 8, L505 (1996) , “Creation of Pb Interface Defects in Thermal Si/SiO2 through Annealing”, A. Stesmans, V. V. Afanas’ev.The generation of paramagnetic interfacial defects (Si ) in standard thermal by thermal processing has been studied in the temperature range . Besides consolidating the well known dissociation (activation) process (prominent from approximately onward) of pre-existing entities, electron spin... (Read more)
- 374. J. Phys.: Condens. Matter 8, 837 (1996) , “An electron paramagnetic resonance investigation of paramagnetic defects in diamond films grown by chemical vapour deposition”, D. F. Talbot-Ponsonby, M. E. Newton, J. M. Baker, G. A. Scarsbrook, R. S. Sussmann, C. J. H. WortDefects in free-standing diamond films grown by microwave-plasma-assisted chemical vapour deposition have been studied by electron paramagnetic resonance (EPR). The EPR spectra observed for the as-grown material each consisted of two distinguishable Lorentzian lines at g = 2.0028(2), along with... (Read more)
- 375. JETP 83, 829 (1996) , “Influence of the Splitting of Dislocations on the g Factor of Holes in a One-Dimensional Dislocation Band”, V. V. Kveder, A. I. Shalynin, É. A. Shte?nman, A. N. Izotov.
- 376. Jpn. J. Appl. Phys. 35, 3937 (1996) , “Hydrogen Passivation of Donors and Hydrogen States in Heavily Doped n-Type Silicon”, N. Fukata, S. Sasaki, S. Fujimura, H. Haneda, K. Murakami.We have studied hydrogen passivation of phosphorus (P) donors and hydrogen states in heavily doped n-type silicon by electron spin resonance (ESR) of P donors and conduction electrons. A remote-treatment method of atomic hydrogen was used for the introduction of H atoms. The hydrogen... (Read more)
- 377. Mater. Sci. Eng. B 42, 213-216 (1996) , “Investigation of deep-level defects in semi-insulating GaAs and InP by analysis of photo-induced current transients”, P. Kamiński, R. Ćwirko, M. Palczewska and R. KozłowskiA new digital approach to PICTS technique was applied to study deep levels in undoped SI GaAs and Fe-doped InP. For SI Fe-doped InP, the 0.64-eV trap related to Fe2 + /Fe3 + acceptor level as well as the 0.53-eV trap attributed to a native defect, were observed. For SI undoped GaAs, three traps: T1... (Read more)
- 378. Mater. Sci. Eng. B 38, 138 (1996) , “Process development for III–V nitrides”, S. J. Pearton, C. R. Abernathy, F. Ren, R. J. Shul, S. P. Kilcoyne, M. Hagerott-Crawford, J. C. Zolper, R. G. Wilson, R. G. Schwartz and J. M. ZavadaAdvances in GaN-based electronic and photonic devices requires improved patterning methods, better Ohmic contacts and higher p-type dopong levels. In this paper, new developments in dry and wet etching. Ohmic contacts and epitaxial growth of III–V nitrides are reported. We find that high ion... (Read more)
- 379. Mater. Sci. Eng. B 36, 77 (1996) , “New Oxygen-Related EPR Spectra in Proton-Irradiated Silicon”, Kh. A. Abdullin, B. N. Mukashev, A. M. Makhov and Yu. V. GorelkinskiiAn electron-paramagnetic resonance (EPR) study of proton-irradiated silicon has revealed two new EPR spectra labeled Si-AA13 and Si-AA14. Spectrum AA13 has C3v symmetry (g = 1.9985 and g = 2.0024 ± 0.0002), AA14 C1 symmetry. These spectra correspond to positive (B+) and negative (B−)... (Read more)
- 380. Mater. Sci. Eng. B 36, 133 (1996) , “EPR of Interstitial Hydrogen in Silicon: Uniaxial Stress Experiments”, Yu. V. Gorelkinskii and N. N. NevinnyiThis paper deals with an electron paramagnetic resonance (EPR) study of the Si-AA9 EPR center, which has been previously identified as arising from a 111 bond-centered (BC) interstitial hydrogen in the neutral charge state (H0) and is a hydrogenic analog of the anomalous state of muonium (Mu*) in... (Read more)
- 381. Phys. Rev. B 54, R6803 (1996) , “Infrared Absorption in Silicon from Shallow Thermal Donors Incorporating Hydrogen and a Link to the NL10 Paramagnetic Resonance Spectrum”, R. C. Newman, J. H. Tucker, N. G. Semaltianos, E. C. Lightowlers, T. Gregorkiewicz, I. S. Zevenbergen, C. A. J. Ammerlaan.Shallow thermal donors (STDs), generated in Czochralski silicon, annealed at 470°C in a hydrogen plasma, and detected by their infrared (IR) electronic absorption, have ground states that shift slightly (?0.1 cm-1) to smaller binding energies, when deuterium is introduced instead of... (Read more)
- 382. Phys. Rev. B 54, R11129 (1996) , “Thermally Induced Interface Degradation in (111) Si/SiO2 Traced by Electron Spin Resonance”, A. Stesmans, V. V. Afanas’ev.Thermal post-oxidation interface degradation in (111) Si/SiO2 has been isolated by electron-spin resonance (ESR) as a permanent Pb (Si ? Si3) interface defect creation. This process, initiating from ?640 °C onward, reveals interface breakdown on an atomic scale as... (Read more)
- 383. Phys. Rev. B 54, 7881 (1996) , “Hydrogen-related defects in polycrystalline CVD diamond”, X. Zhou, G. D. Watkins, K. M. McNamara Rutledge, R. P. Messmer, S. ChawlaBy simulating the line shapes of a commonly observed S=1/2 electron paramagnetic resonance (EPR) center in polycrystalline chemical vapor deposited (CVD) diamond at 9.8, 14, 20, and 35 GHz, we conclude that the EPR signal, which we label H1, results from a unique defect with a single hydrogen atom... (Read more)
- 384. Phys. Rev. B 54, 7874 (1996) , “Nitrogen-related dopant and defect states in CVD diamond”, E. Rohrer, C. F. O. Graeff, R. Janssen, C. E. Nebel, M. Stutzmann, H. Güttler, R. ZachaiSubbandgap absorption of chemical-vapor-deposition diamond films, with nitrogen contents varying from 10 to 132 ppm has been explored by the constant-photoconductivity method (CPM), photothermal-deflection spectroscopy (PDS) and electron spin resonance (ESR). The spectra measured by PDS increase... (Read more)
- 385. Phys. Rev. B 54, 6988 (1996) , “Electron-paramagnetic-resonance measurements on the di-<001>-split interstitial center (R1) in diamond”, D. J. Twitchen, M. E. Newton, J. M. Baker, O. D. Tucker, T. R. Anthony, W. F. BanholzerElectron-paramagnetic-resonance (EPR) studies in electron-irradiated diamond enriched with 5% 13C have resulted in identification of the di-?001?-split interstitial center. It is the isotopic enrichment and the consequent observation of 13C hyperfine satellites that have... (Read more)
- 386. Phys. Rev. B 54, 10543 (1996) , “Fourier-Transform Photoluminescence Spectroscopy of Excitons Bound to Group-III Acceptors in Silicon: Zeeman Effect”, V. A. Karasyuk, M. L. W. Thewalt, S. An, E. C. Lightowlers, A. S. Kaminskii.Photoluminescence of excitons bound to Al, Ga, In, and Tl acceptors in Si was studied at liquid-He temperatures in magnetic fields up to 14.5 T with ?001?, ?111?, and ?110? orientations with 0.0025-meV spectral resolution. All details of the Zeeman spectra for every field orientation, with up to 30... (Read more)
- 387. Phys. Rev. B 54, 10508 (1996) , “Neutral manganese acceptor in GaP: An electron-paramagnetic-resonance study”, J. Kreissl, W. Ulrici, M. El-Metoui, A.-M. Vasson, A. Vasson, A. GavaixIn order to clarify the nature of the neutral Mn acceptor in GaP, we have carried out optical-absorption and electron-paramagnetic-resonance (EPR) experiments using both conventional and thermally detected EPR on semi-insulating GaP:Mn. In thermal equilibrium at low temperatures, all the manganese... (Read more)
- 388. Phys. Rev. B 53, 13441 (1996) , “Electronic structure of the N-V center in diamond: Theory”, A. Lenef, S. C. RandAb initio calculations have been made of possible excited electronic structure of the N-V center in diamond. Molecular-orbital basis states for a center of C3v symmetry with n=2, 4, or 6 active electrons, which account fully for spin symmetries of the wave functions, were constructed to... (Read more)
- 389. Phys. Rev. B 53, 13427 (1996) , “Electronic structure of the N-V center in diamond: Experiments”, A. Lenef, S. W. Brown, D. A. Redman, S. C. Rand, J. Shigley, E. FritschQuantum-beat spectroscopy has been used to observe excited states of the N-V center in diamond. For the 1.945-eV optical transition, direct evidence is presented for the existence of GHz-scale fine structure, together with a much larger 46-cm-1 level splitting in the E state. An... (Read more)
- 390. Phys. Rev. B 53, 12570 (1996) , “Electron Paramagnetic Resonance of a Au-Au Pair in Heat-Treated Silicon”, P. M. Williams, P. W. Mason, and G. D. WatkinsTwo previously unreported electron paramagnetic resonance centers of C2v symmetry, labeled Si-LAu1 and Si-LAu2, are observed in p-type gold-doped silicon after a heat treatment at 1250 °C. For one of them, Si-LAu2, complex resolved hyperfine structure reveals the presence of two... (Read more)
- 391. Phys. Rev. Lett. 77, 4600 (1996) , “Electronic Structure of Band-Tail Electrons in a Si:H”, T. Umeda, S. Yamasaki, J. Isoya, A. Matsuda, and K. TanakaElectronic structures of the light-induced electron spin resonance (LESR) centers in undoped a-Si:H have been investigated by means of pulsed ESR techniques. Overlapping LESR signals of g = 2.004 and 2.01 have been experimentally deconvoluted by using the difference in spin-lattice relaxation time... (Read more)Si| EPR| Silicon amorphous band-tail n-type p-type .inp files: Si/band-tail | last update: Takahide Umeda
- 392. Phys. Solid State 38, 549 (1996) , “Identification of Intrinsic Interstitial Complexes in Silicon by EPR”, G. O. Tozhibaev, Sh. M. Makhkamov, Yu. V. Gorelkinski?, N. A. Tursunov, M. A. Makhov.Although a large number of experimental papers on defect center states in silicon have been published, there is still not enough information on intrinsic interstitial defects. Of the large number of defects identified by EPR signals in irradiated silicon, only four centers (Si-G25, Si-A5, Si-B3, and Si-P6) are related to intrinsic interstitial complexes of silicon.
- 393. phys. stat. sol. (a) 157, 405 (1996) , “On the Nature of Deep Donors Created at 450 C in Boron-Doped p-Si”, V. M. Babich, N. P. Baran, M. Ya. Valakh, V. L. Kiritsa, G. Yu. Rudko.It is shown that the boron impurity in oxygen-rich p-Si is involved in the formation of electrically active complexes, namely, deep thermal donors, during thermal annealing at T = 450°C. The conclusion is based on experimental results obtained by several techniques such as Hall measurements,... (Read more)
- 394. phys. stat. sol. (a) 154, 219 (1996) , “Microstructure Evolution and Defect Incorporation in Highly Oriented and Textured CVD Diamond Films”, Y. von Kaenel, J. Stiegler, E. Blank, O. Chauvet, Ch. Hellwig, K. PlamannA series of highly oriented and textured microwave CVD diamond films, where only the deposition time was varied, was deposited on silicon wafers in order to follow the evolution of the microstructure and defect content with film thickness. SEM, XRD, Raman spectroscopy, luminescence measurements, and... (Read more)
- 395. Proc. SPIE 2780, 133-136 (1996) , “Digital analysis of photo-induced current transients in semi-insulating GaAs and InP”, Pawel Kaminski, Michal Pawlowski, Robert Cwirko, M. Palczewska, Roman KozlowskiDigital PITS technique was applied to study deep-level defects in semi-insulating GaAs and InP. The studies were completed by measurements of ESR spectra on the same wafers.... (Read more)
- 396. Prog. Surf. Sci. 51, 263-408 (1996) , “Scanning tunneling microscopy study of fullerenes”, T. Sakurai, X. -D. Wang, Q. K. Xue, Y. Hasegawa, T. Hashizume and H. ShinoharaScanning tunneling microscopy investigations of adsorption and film growth of various fullerenes on semiconductor and metal surfaces are reviewed. The fullerenes being studied are C60, C70, C84, Sc@C82 and Y@C82 and the substrates being used for adsorption are Si (111), Si (100), Ge (111), GaAs... (Read more)
- 397. Radiat. Meas. 26, 131-137 (1996) , “Effect of oxide additives on radiolytic decomposition of zirconium and thorium nitrates”, N. G. Joshi, A. N. Garg, V. Natarajan and M. D. SastryGamma ray-induced decomposition of the binary mixtures of zirconium and thorium nitrates with 2.5, 5 and 10 mol% of V2O5, PbO, ThO2, ZrO2, and MnO2 has been studied at different doses up to 260 kGy. Radiation chemical yield G(NO2−)-values are enhanced by V2O5, PbO, and ThO2 but are decreased... (Read more)
- 398. Semicond. Sci. Technol. 11, 1696-1703 (1996) , “Metastable oxygen - silicon interstitial complex in crystalline silicon”, Kh. A. Abdullin, B. N. Mukashev, Yu. V. Gorelkinskii.A new metastable complex in monocrystalline silicon irradiated at with protons has been studied. Electron paramagnetic resonance (EPR) Si-AA13 ( symmetry) and Si-AA14 ( symmetry) spectra as well as the known Si-A18 spectrum originate from different molecular configurations of the complex. A... (Read more)
- 399. Semiconductors 30, 552 (1996) , “Anomalous excitation in the ESR spectrum of the Fe3+ ion in GaAs”, A. A. Ezhevski?, S. J. H. M. van Gisbergen, C. A. J. Ammerlaan
- 400. Semiconductors 30, 1055 (1996) , “Detection of Paramagnetic Recombination Centers in Irradiated Silicon p-n Jundtions”, M. M. Afanas’ev, M. P. Vlasenko, V. N. Lomasov, A. V. Militsyn.
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