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- 1001. Nature 210, 692 (1966) , “DISTRIBUTION OF SUBSTITUTIONAL NITROGEN DONORS IN SYNTHETIC DIAMONDS”, M. J. A. Smith, B. R. Angel, R. G. EmmonsConsiderable attention has been devoted to the study of nitrogen impurity in natural diamonds using the technique of electron spin resonance1-3. The spectrum obtained in due to the unpaired electron provided by the substitutional nitrogen atom and the main feature is a triplet at g = 2.0024 caused by interaction with the nitrogen nucleus which has a spin of unity. The distribution of nitrogen is variable and would seem to depend on the method by which the diamond was formed. (Read more)
- 1002. Nature 210, 1037 (1966) , “Electron Spin Resonance Spectra associated with Nitrogen in Diamonds”, H. J. Bower, M. C. R. SymonsMANY diamonds show an electron spin resonance spectrum which has been attributed to the presence of single nitrogen atoms substituted for carbon at a diamond lattice site. Smith etal.1 found four types of nitrogen donors, equally abundant and differing only in their hyperfine axes, these being the four C–N bond directions. They measured the hyperfine coupling constants for 14N(I=1), and for 13C(I = ½) in the nearest neighbour positions (denoted centre I). Loubser and du Preez2 found additional lines in the spectrum, which they attributed to interaction of the unpaired electron with carbon-13 at other lattice sites (centres II, III and IV). The hyperfine coupling constants are recorded in Table 1, together with the orbital populations. These populations were obtained using values of |ψ2s(0)|2 and
-3>2p calculated from self-consistent-field atomic wave functions derived by Mayers and by Roothaan and Clementi (see ref. 3). (We have omitted any correction for the δ+ charge on nitrogen and the δ- charge on carbon: this would increase the spin density on carbon at the expense of the nitrogen.) (Read more) - 1003. Phys. Rev. 149, 687 (1966) , “Electron Paramagnetic Resonance and Electrical Properties of the Dominant Paramagnetic Defect in Electron-Irradiated p-Type Silicon”, N. Almeleh, B. Goldstein.Lattice defects having strong paramagnetic resonances are introduced into p-type silicon that has been bombarded with electrons. We have studied the paramagnetic properties and growth of the dominant defect so introduced (the K center) as functions of electron flux and bombardment energy under... (Read more)
- 1004. Phys. Rev. Lett. 17, 428 (1966) , “Direct Observation of Lithium-Defect Interaction in Silicon by Electron Paramagnetic Resonance Measurements”, Bernard GoldsteinElectron paramagnetic resonance measurements have been used to observe directly the interaction of lithium with damage centers produced by electron irrsadiation in n-type, floatzone silicon. The silicon is characterized by low oxygen concentrations, with lithium as the predominant... (Read more)
- 1005. Surf. Sci. 5, 267-282 (1966) , “Electron paramagnetic resonance study on silicon, germanium, and gallium arsenide surfaces interacting with adsorbed oxygen*1”, P. Chan , A. SteinemannWhen exposed to various oxygen containing gases, powdered samples of Si, Ge, InAs, and GaAs show an EPR signal at g = 2.0027. Adsorption of gaseous mixtures containing oxygen broadens the line. This is attributed to dipolar interaction between the paramagnetic centres created below the semiconductor... (Read more)
- 1006. Brit. J. Appl. Phys. 16, 457 (1965) , “New lines in the electron spin resonance spectrum of substitutional nitrogen donors in diamond”, J. H. N. Loubser, L. du PreezThe electron spin resonance lines of nitrogen impurity in diamond found by Smith, Sorokin, Gelles and Lasher have been re-examined in special samples and at low energy densities. (Read more)
- 1007. J. Chem. Phys. 42, 1898 (1965) , “Irradiation Damage in Type I Diamond”, H. B. Dyer and L. du PreezIn addition to the GRI and uv bands induced in all diamond by 0.78-MeV electron irradiation, another optical absorption feature, which we have named the ND1 band, is found in all Type I diamonds. A single EPR line appears to be associated with the ND1 band.It is suggested that the ND1 center arises... (Read more)
- 1008. J. Phys. Soc. Jpn. 20, 1447 (1965) , “Electron Spin Resonance in Phosphorus Doped Silicon at Low Temperatures”, S. Maekawa, N. Kinoshita.Effects of exchange and motion on electron spin resonance spectrum of phosphorus doped Si with concentration of 3×1016cm-3~3×1019cm-3 were investigated at liquid helium temperatures and at about 9300 Mc/sec. At lower concentrations, the intensity of... (Read more)
- 1009. Phys. Rev. 138, A555 (1965) , “Production of Divacancies and Vacancies by Electron Irradiation of Silicon”, J. W. Corbett and G. D. WatkinsA study is described of the dependence of the room-temperature production of divacancies and vacancies in silicon upon the energy of the bombarding electrons over the range 0.7-56 MeV. For the divacancy, the Si-G6 electron-paramagnetic-resonance spectrum associated with the singly positively charged... (Read more)
- 1010. Phys. Rev. 138, A543 (1965) , “Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the Divacancy”, G. D. Watkins and J. W. CorbettTwo electron paramagnetic resonance spectra produced in silicon by 1.5-MeV electron irradiation are described. Labeled Si-G6 and Si-G7, they are identified as arising from the singly positive and singly negative charged states of the divacancy, respectively. The observed hyperfine interactions with... (Read more)
- 1011. Phys. Rev. 137, A1520 (1965) , “Paramagnetic Resonance Study of a Deep Donor in Silicon”, G. W. Ludwig.The impurity sulfur acts as a double donor in silicon. Assuming the ion to be substitutional, S+ is analogous to neutral phosphorus, except that the binding energy of the donor electron is much greater. Here we report paramagnetic resonance absorption of S+, including a... (Read more)Si| EPR| Iron S Sulfur U donor n-type .inp files: Si/Sulfur Si/FeS Si/Sulfur2 Si/Sulfur3 | last update: Takahide Umeda
- 1012. Radiation Damage in Semiconductors 97-113 (1965) , Dunod, Paris , “A Review of EPR Studies in Irradiated Silicon”, G. D. Watkins.1. INTRODUCTION (p.97): 2. THE EPR EXPERIMENT (p.97): 3. RESULTS (p.99): A. The lattice Vacancy (p.99), B. Vacancies Trapped by Other Defects (p.102), C. Vacancy Motion (p.103), D. Interstitial Defects (p.103), E. Other Spectra (p.105), 4. SUMMARY AND CONCLUSION (p.110): 5.ACKNOWLEDGMENTS (p.110):
- 1013. Solid State Commun. 3, 357 (1965) , “Elektronenspin-Resonanz in Verformtem Silizium”, H. Alexander, R. Labusch and W. SanderBei 800°C verformte Silizium-Kristalle zeigen ein Elektronenspinresonanz-Signal, dessen Intensität mit der Versetzungsdichte zunimmt. Wir vermuten, daβ dieses Signal von ungepaarten Elektronen im Kern von Versetzungen stammt. Durch die Verformung wird die Bildung von Atomgruppen in... (Read more)
- 1014. Solid State Commun. 3, 307 (1965) , “EXCHANGE INTERACTION EFFECTS IN THE E.S.R. SPECTRUM OF SUBSTITUTIONAL NITROGEN IN DIAMOND”, J. H. N. Loubser, W. P. van Ryneveld and L. du PreezThe E.S.R. lines due to substitutional nitrogen in synthetic diamond powders, heavily doped with nitrogen, were found to exhibit the characteristic features of exchange interaction. In the coats of natural diamonds additional lines due to exchange interaction between triads of nitrogen atoms were... (Read more)
- 1015. Sov. Phys. Solid State 6, 2460 (1965) , “DISTRIBUTION OF PARAMAGNETIC NITROGEN CENTERS IN SOME TYPE-I DIAMONDS”, N. D. Samsonenko
- 1016. Phys. Rev. 135, A1381-A1385 (1964) , “New Oxygen Infrared Bands in Annealed Irradiated Silicon”, J. W. Corbett, G. D. Watkins, and R. S. McDonaldInfrared and electron-spin-resonance measurements on the recovery of silicon irradiated with 1.5-MeV electrons are presented. In the infrared measurements the disappearance of the previously reported 829-cm-1 (12?) oxygen vibration band is followed, and the appearance and subsequent... (Read more)
- 1017. Phys. Rev. 134, A265 (1964) , “Electron Spin Resonance Experiments on Shallow Donors in Germanium”, D. K. WilsonAt liquid helium temperatures, spin resonance of localized donor electrons has been observed in phorphorus-, arsenic-, and bismuth-doped germanium. The presence of hyperfine splitting confirms the singlet as the ground state for all three. The separation of the excited triplet states has been... (Read more)
- 1018. Phys. Rev. 134, A1359 (1964) , “Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-E Center”, G. D. Watkins, J. W. Corbett.The Si-E center is one of the dominant defects produced by electron irradiation in phosphorus-doped vacuum floating zone silicon. It introduces an acceptor level at ?(Ec-0.4) eV and gives rise to an electron paramagnetic resonance when this level does not contain an electron. As a result... (Read more)
- 1019. J. Phys. Chem. Solids 24, 1467 (1963) , “Spin and combined resonance on acceptor centres in Ge and Si type crystals—I Paramagnetic resonance in strained and unstrained crystals”, G. L. Bir, E. I. Butikov, G. E. Pikus.A theory of paramagnetic resonance on acceptor centres in deformed and non-deformed Ge and Si type crystals is developed. The splitting of the ground state under the action of the deformation and magnetic field is determined and the probability of transitions between levels is estimated. Using the... (Read more)
- 1020. J. Phys. Chem. Solids 24, 1 (1963) , “A new paramagnetic center in electron irradiated silicon*1”, G. Bemski, B. Szymanski.Electron irradiation of silicon produces paramagnetic centers in n-type silicon. Experiments are described in which a new paramagnetic center is observed. In contrast to the two previously studied centers, electrons of 0.5 MeV energy do not produce the new center. The dependence of the rate of... (Read more)
- 1021. Nature 198, 981 (1963) , “Electron Spin Resonance in Neutron-irradiated Diamond”, E. A. Faulkner, E. W. J. Mitchell, P. W. WhippeyRecent work has shown that the nature of the electron spin resonance spectrum observed in irradiated diamond depends on the type and amount of irradiation. Faulkner and Lomer used comparatively heavy doses of 2-MeV electrons (up to 8×1019 electron cm-3) and distinguished four systems, all of which show a g-value which is isotropic and equal to the free-spin value within 0-2 per cent: (a) asingle line of width about 5 gauss; (b) a system of 24 lines with symmentry axes near the <221> directions, and a D-value of 0-14 cm-1; (c) a system of 6 lines with symmentry axes along the <100> directions and a D-value of 0-14 cm-1; (d) a broad absorption with a half-power width of about 70 gauss, showing a complicated anisotropic structure. (Read more)
- 1022. Phys. Rev. 132, 648 (1963) , “Spin-1 Centers in Neutron-Irradiated Silicon”, Wun Jung and G. S. NewellElectron paramagnetic resonance was used to study a number of fast-neutron-induced defects formed in pile-irradiated silicon and to follow their concentrations as a function of annealing. Measurements were made at 300, 77, and 4.2°K on samples which had attained intrinsic resistivity during... (Read more)
- 1023. Phys. Rev. Lett. 10, 220 (1963) , “ELECTRON PARAMAGNETIC RESONANCE INVESTIGATION OF THE VACANCY IN DIAMOND”, John A. Baldwin, Jr.Griffiths, Owen, and Ward reported that diamonds exposed to reactor neutrons developed an intense isotropic electron paramagnetic resonance (EPR) absorption lone whose g value was very close to that of the free electron. They found that a similar line was produced by 1-MeV electrons. The work herein... (Read more)
- 1024. Nature 194, 829 (1962) , “DIAMONDS CONTAINING CONTROLLABLE IMPURITY CONCENTRATIONS”, C. M. Huggins, P. CannonThe presence of cosiderable quantities of impurities in natural diamond has recently been confirmed1,2. This led Frank3 to remark that multiple techniques of examination must be used on such material. In view of the report of Yoneda4 concerning possible effects of nitrogen on the X-ray diffraction patterns of diamond, it seems worth-while to us to comment further on some of the results which we have gained by the deliberate introduction of a given impurity into laboratory-grown diamond. We shall limit ourselves to a qualitative examination of the electron spin resonance spectra of a few specimens, in the belief that the profundity of the effects suffices to establish that progress in this area is now limited by the composition variability of natural diamond. (Read more)
- 1025. Phys. Rev. 128, 1605 (1962) , “Electron Spin Resonance in Neutron-Irradiated Silicon”, M. Nisenoff and H. Y. FanElectron spin resonance produced in silicon by fast neutron irradiation was studied. The temperature of the samples during the irradiation was about 50°C. Different spectra were observed depending on the Fermi level in the irradiated sample. Samples with the Fermi level near the middle of the energy... (Read more)
- 1026. Phys. Rev. 126, 466 (1962) , “Spin Resonance of Pd and Pt in Silicon”, H. H. Woodbury and G. W. LudwigThe transition metals Pd and Pt usually occur in diamagnetic form. However, in silicon both Pd and Pt act as acceptor impurities; the ions Pd- and Pt- are paramagnetic and have been studied by electron spin resonance. Both ions have a [001] and two mutually perpendicular [110]... (Read more)
- 1027. Solid State Physics 13, 223-304 (1962) , Academic Press, New York (Edited by F. Seitz, D. Turnbull) , “Electron Spin Resonance in Semiconductors”, G. W. Ludwig, H. H. Woodbury.I. Introduction (p.223): II. The Resonance Technique (p.226): 1. The Spin Hamiltonian (p.226), 2. The Spin Resonance Spectrum (p.231), 3. Experimental Techniques (p.237), III. Resonance Studies in Silicon (p.243): 4. Shallow Donor Impurities (p.244), 5. Shallow Acceptor Impurities (p.259), 6. Transition Metal Ions (p.263), 7. Impurity Pairs (p.273), 8. Radiation Damage Centers (p.280), IV.Resonance Studies in Other Semiconductors (p.286): 9. Germanium (p.286), 10. Graphite and Diamond (p.290), 11. Silicon Carbide (p.293), 12. Indium Antimonide and Gallium Phosphide (p.294), 13. Zinc Sulfide and Related Semiconductors (p.295), Acknowledgments (p.304)
- 1028. J. Appl. Phys. 32, 1854 (1961) , “Paramagnetic Resonance of Defects Introduced Near the Surface of Solids by Mechanical Damage”, G. K. Walters and T. L. EstleElectron spin resonance characteristics of a number of materials subjected to violent mechanical treatment are reported. A line with g=2.0055 observed in silicon is attributed to defects introduced near the surface by mechanical damage. The resonance properties are uninfluenced by... (Read more)
- 1029. J. Appl. Phys. 32, 1854 (1961) , “Paramagnetic Resonance of Defects Introduced Near the Surface of Solids by Mechanical Damage”, G. K. Walters and T. L. EstleElectron spin resonance characteristics of a number of materials subjected to violent mechanical treatment are reported. A line with g=2.0055 observed in silicon is attributed to defects introduced near the surface by mechanical damage. The resonance properties are uninfluenced by... (Read more)
- 1030. Phys. Rev. 124, 1068 (1961) , “Electron Spin Resonance Experiments on Donors in Silicon. III. Investigation of Excited States by the Application of Uniaxial Stress and Their Importance in Relaxation Processes”, D. K. Wilson, G. Feher.The excited states of the antimony, phosphorus, and arsenic impurities in silicon have been investigated by subjecting samples to a uniaxial stress and observing the change in the electron spin resonance spectrum. The experiments were performed at 1.25°K and ?9000 Mc/sec on silicon samples subjected... (Read more)
- 1031. Phys. Rev. 121, 1001 (1961) , “Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-A Center”, G. D. Watkins, J. W. Corbett.The Si-A center is a major, radiation-damage defect produced in "pulled" silicon by a room temperature irradiation. As a result of studies described in this paper (I), and the following one (II), it is concluded that this center is a lattice vacancy with an oxygen atom impurity bridging two of the... (Read more)
- 1032. Phys. Rev. Lett. 7, 314 (1961) , “Silicon Divacancy and Its Direct Production by Electron Irradiation”, J. W. Corbett and G. D. WatkinsTo date two defects produced in radiation damage of silicon hava been identified.These defects are a vacancy-oxygeon pair and a vacancy-phosphorous pair. They were identified largely by their associated electron spin resonance spectra and have been labeled the Si-A and Si-E... (Read more)Si| EPR electron-irradiation| G6 Silicon pair(=2) vacancy .inp files: Si/V2+ | last update: Takashi Fukushima
- 1033. Phys. Rev. Lett. 7, 240 (1961) , “Splitting of Electron Spin Resonance Lines by an Applied Electric Field”, G. W. Ludwig and H. H. WoodburyNuclei or paramagnetic irons in many solids occupy sites which lack inversion symmetry. Bloembergen has recently called attention to the possibility of observing shifts, proportional to the applied electric field ε, in the energy levels of such systems. Consistent with Bloembergen's ideas,Kushida... (Read more)
- 1034. Phys. Rev. 118, 939 (1960) , “Cross Relaxation Studies in Diamond”, P. P. Sorokin, G. J. Lasher, and I. L. GellesA microwave double resonance experiment performed on the paramagnetic nitrogen centers in diamond shows that in this system cross relaxation occurs via a four spin flip mechanism which exactly conserves Zeeman energy. In this process, which was first postulated by Bloembergen and co-workers in their... (Read more)
- 1035. Phys. Rev. 117, 1287 (1960) , “Magnetic Moment of Au197”, H. H. Woodbury, G. W. Ludwig.Chromium-gold and maganese-gold impurity pairs in silicon have been observed by electron spin resonance techniques. Electron-nuclear double resonance studies of the gold hyperfine structure lead to a value of 0.1439±0.0004 nm for the magnetic moment of Au197. (Read more)
- 1036. Phys. Rev. 117, 1286 (1960) , “Magnetic Moment of Fe57”, G. W. Ludwig, H. H. Woodbury.An electron-nuclear double resonance study has been made on the spectrum of neutral iron atoms in silicon. These measurements lead to a value of +0.0903±0.0007 nm for the magnetic moment of Fe57. (Read more)
- 1037. Phys. Rev. 117, 102 (1960) , “Spin Resonance of Transition Metals in Silicon”, H. H. Woodbury and G. W. LudwigSpin resonance measurements are reported for various charge states of four transition metals in silicon, namely for V++, Cr+, Mn-, Mn++, and Fe0. In each case the g tensor and the hyperfine interaction with the impurity nucleus are isotropic.... (Read more)Si| EPR| Iron Manganese Vanadium .inp files: Si/Mn- Si/Fe Si/Mn4 Si/Vanadium | last update: Masatoshi Sasaki
- 1038. Phys. Rev. Lett. 5, 96 (1960) , “Vacancy Interactions in Silicon”, H. H. Woodbury and G. W. LudwigThe production and properties of vacancies in silicon are subjects upon which much empirical work has been done.For the most part the interpretation of the data in terms of detailed models has been inconclusive.Recently the interaction of radiation-induced defects(suggested to be vacancies)with... (Read more)
- 1039. Phys. Rev. Lett. 5, 425 (1960) , “Resonant Spin-Spin Interaction between Donors and Acceptors in Silicon”, R. A. Levy.A reduction of the direct relaxation time of donor electrons in silicon,belived to be due to a resonant spin-spin interaction with a background acceptor resonance line,has been observed in compensated silicon containing approximately 5×1015 phosphorus donor/cm3 and... (Read more)
- 1040. Phys. Rev. Lett. 5, 309 (1960) , “Paramagnetic Resonance Absorption from Acceptors in Silicon”, G. Feher, J. C. Hensel, and E. A. GereIn the past,several attempts to observe the paramagnetic absorption from acceptors in silicon were unsuccessful.The reasons for this failure were pointed out by Kohn and are associated with the degeneracy of the valence band in silicon.We wish to report in this Letter the observation of the... (Read more)
- 1041. J. Appl. Phys. 30, 1198 (1959) , “Spin Resonance in Electron Irradiated Silicon”, G. D. Watkins, J. W. Corbett, and R. M. WalkerThe spin resonance behavior in room temperature irradiated n-type silicon is observed to be significantly different for silicon grown in quartz crucibles from that grown by the floating zone method. The dominant spectrum in each is discussed. The defects giving rise to the spectra are... (Read more)
- 1042. J. Appl. Phys. 30, 1195 (1959) , “Paramagnetic Resonance in Electron Irradiated Silicon”, G. Bemski.Electron spin resonance has been observed in n-type silicon irradiated with 0.5-Mev electrons. The particular resonance lines discussed here appear only in pulled crystals which contain about 1018 oxygen atoms per cm3. The lines do not appear in floating zone crystals... (Read more)Si| EPR electron-irradiation| A Oxygen Silicon pair(=2) vacancy .inp files: Si/V-O | last update: Takahide Umeda
- 1043. J. Phys. Chem. Solids 8, 490 (1959) , “Spin resonance of deep level impurities in germanium and silicon”, G. W. Ludwig, H. H. Woodbury and R. O. CarlsonElectron spin resonance measurements have been reported for nickel and manganesein germanium.We have been studying several deep level impurities in germanium and silicon be resonance tecniques,but only two system,nickel in germanium and manganese in silicon,will be discussed here. (Read more)
- 1044. Phys. Rev. 115, 1546 (1959) , “Electron-Spin Resonance of Nitrogen Donors in Diamond”, W. V. Smith, P. P. Sorokin, I. L. Gelles, and G. J. LasherElectron-spin resonance of bound substitutional nitrogen donors in diamond is observed and discussed. The g factor is isotropic at 2.0024±0.0005. For a given donor, one of the C-N bond directions is a hyperfine axis with constants A=40.8 oersteds, B=29.2 oersteds. There are thus four types of... (Read more)
- 1045. Phys. Rev. 114, 1245 (1959) , “Electron Spin Resonance Experiments on Donors in Silicon. II. Electron Spin Relaxation Effects”, G. Feher and E. A. GereThe different relaxation processes that connect the four energy levels in phosphorus doped silicon have been investigated experimentally. The relaxation time Ts (?ms=±1, ?mI=0) was found to be independent of phosphorus concentration below ?1016... (Read more)
- 1046. Phys. Rev. 114, 1219 (1959) , “Electron Spin Resonance Experiments on Donors in Silicon. I. Electronic Structure of Donors by the Electron Nuclear Double Resonance Technique”, G. Feher.The ground-state wave function of the antimony, phosphorus, and arsenic impurities in silicon has been investigated by means of the electron nuclear double resonance (ENDOR) method. By this method the hyperfine interactions of the donor electron with the Si29 nuclei situated at different... (Read more)
- 1047. Phys. Rev. Lett. 2, 39 (1959) , “ELECTRON SPIN RESONANCE OF ACCEPTOR STATES IN DIAMOND”, W. V. Smith, I. L. Gelles, and P. P. SorokinPrevious work reporting electron spin resonance in diamond has been concerned exclusively with paramagnetic centers produced by irradiation with fast neutrons. Using standard resonance techniques we have recently detected at room temperature a family of weak, narrow resonance lines near g=2... (Read more)
- 1048. Phys. Rev. 109, 221 (1958) , “Spontaneous Emission of Radiation from an Electron Spin System”, G. Feher, J. P. Gordon, E. Buehler, E. A. Gere, and C. D. ThurmondIt was pointed out by Combrission,Honig,and Townes that under certain conditions energy which has been stored in a spin system may be spontaneously and coherently radiated into a resonant cavity at the Larmor precession frequency of the spins.In this note we wish to report the direct observation of... (Read more)
- 1049. Phys. Rev. 109, 1172 (1958) , “Hfs Anomaly of Sb121 and Sb123 Determined by the Electron Nuclear Double Resonance Technique”, J. Eisinger, G. Feher.The ratios of the hyperfine interaction constants "a" and the nuclear g factors of the stable isotopes of antimony have been measured. From these measurements the hyperfine structure anomaly, defined as ?=(a121/a123)(g123/g121)-1, was found to be... (Read more)
- 1050. Phys. Rev. Lett. 1, 295 (1958) , “Spin of Fe57”, G. W. Ludwig, H. H. Woodbury, R. O. Carlson.The spin of the stable isotope Fe57 has been directly observed to be 1/2 from the electron spin resonance spectrum of iron-doped silicon.Samples were prepared by alloying several milligrams of ironenriched to contain 84.1% Fe57 onto silicon crystals 3mm×3mm×10mm.The iron was... (Read more)
- 1051. Phys. Rev. 107, 1462 (1957) , “Spin and Magnetic Moment of P32 by the Electron Nuclear Double-Resonance Technique”, G. Feher, C. S. Fuller, E. A. Gere.The spin and magnetic moment of 14-day P32 with dtermined by the electron unclear double resonance (ENDOR) technique.The P32 obtained from Oak Ridge was diffused into high-resistivity silicon plates having a total volume of 0.25 cm3. (Read more)
- 1052. Solid State Physics 5, 258-319 (1957) , Academic Press, New York (Edited by F. Seitz, D. Turnbull) , “Shallow Impurity States in Silicon and Germanium”, W. KohnI. Introduction (p.258): II. Emprical Properties (p.261): 1. Energy Levels (p.261), a. Ionization Energies, b. Spectra of Excited States, 2. Spin Resonance (p.266), a. Electron Spin Resonance, b. Double Resonance, 3. Static Magnetic Susceptibility (p.271), III. Structure of Donor States (p.271): 4. Conduction Bands of Silicon and Germanium (p.271), a. Silicon, b. Germanium, 5. Effective Mass Theory of Donor States (p.274), a. Single Band Minimum at k=0, b. Several Conduction Band Minima, c. Matrix Elements for Radiative Transitions, 6. Numerical Results and Comparison with Experiments (p.285), a. Energy Levels, b. Wave Functions, 7. Corrections to the Effective Mass Formalism (p.289), a. General Considerations, b. Corrected Wave Functions, c. Comparison with Experiment, IV. Structure of Acceptor States (p.297): 8. Valence Bands of Silicon and Germanium (p.297), a. Silicon, b. Germanium, 9. Effective Mass Equations for Acceptor States (p.300), 10. Approximate Solutions and Comparison with Experiment (p.301) a. Germanium b. Silicon V.Effects of Strains and of Static Electric and Magnetic Fields (p.306): 11. Strains (p.306) a. Donor States, b. Acceptor States, 12. Stark Effect (p.311)
- 1053. Phys. Rev. 103, 834 (1956) , “Observation of Nuclear Magnetic Resonances via the Electron Spin Resonance Line”, G. Feher.The double-frequency resonance method reported recently in connection with a unclear polarization schemehas been extended to observe unclear transitions and thereby determine hyperfine interactions and unclear g values. (Read more)
- 1054. Phys. Rev. 103, 501 (1956) , “Polarization of Phosphorus Nuclei in Silicon”, G. Feher and E. A. GereIn the preceding Letter a scheme for polarizing unclei was described.This letter deals with the experimental verificationof the scheme. (Read more)
- 1055. Nature 173, 439 (1954) , “PARAMAGNETIC RESONANCE IN NEUTRON-IRRADIATED DIAMOND AND SMOKY QUARITZ”, Dr. J. H. E. Griffiths, J. Owen, I. M. WardThe nature of lattice defects in neutron-irradiated diamond is a problem of current interest. These defects are known to cause changes in some of the physical properties1 and give rise to a paramagnetic absorption spectrum. We have measured this spectrum in the temperature-range 20º-290ºK., using wave-lengths of 1-2 and 3-1 cm. There are many closely spaced lines, of which two main types can be distinguished. (Read more)
- 1056. Phys. Rev. 95, 1686 (1954) , “Electron Spin Resonance of an Impurity Level in Silicon”, A. Honig and A. F. KipThe saturation of the microwave transition J=0→1 of CH3Sl35 has been measured by the method of Baird and Bird1.The resulte constitute the first measurement on saturation of a rotational absorption line,all other microwave saturation measurements having been... (Read more)
- 1057. Phys. Rev. 94, 1392 (1954) , “Spin Resonance of Donors in Silicon”, R. C. Fletcher, W. A. Yager, G. L. Pearson, A. N. Holden, W. T. Read, and F. R. MerrittResonance absorption belived associated with the spin of electrons bound to Group V donor atoms has been observed in several different examples of silicon.The absorption was measured on a Zeeman modulation spectrometer operating at a frequancy of 24000 Mc/sec.The samples were cut from single... (Read more)
- 1058. Phys. Rev. 90, 988 (1953) , “Electron Spin Resonance in a Silicon Semiconductor”, A. M. Portis, A. F. Kip, C. Kittel, W. H. Brattain.We hava observed electron spin resonance absorption in the 9000Mc/sec range in a powdered n type silicon semiconductor specimen at temperatures between 4ºK and 300ºK.We belive this is the first occasion that electron spin resonance has been reported for a semiconductor.The preliminary... (Read more)
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