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- 101. Phys. Rev. B 67, 165215 (2003) , “Spin resonance investigations of Mn2+ in wurtzite GaN and AlN films”, T. Graf, M. Gjukic, M. Hermann, M. S. Brandt, M. Stutzmann, O. AmbacherHigh quality Mn-doped GaN and AlN films grown by molecular beam epitaxy have been investigated with X-band electron spin resonance (ESR). The observed resonance patterns are well described by the spin Hamiltonian for isolated 55Mn2+ centers with electronic spin S... (Read more)
- 102. Phys. Rev. B 67, 125207 (2003) , “Silicon and carbon vacancies in neutron-irradiated SiC: A high-field electron paramagnetic resonance study”, S. B. Orlinski, J. Schmidt, E. N. Mokhov, P. G. BaranovElectron-paramagnetic-resonance (EPR) and electron-spin-echo (ESE) studies have been performed that show that isolated VSi-, VSi0, and VC vacancies are the dominant intrinsic paramagnetic defects in SiC treated by room-temperature neutron... (Read more)
- 103. Phys. Rev. Lett. 90, 185507 (2003) , “Hydrogen Incorporation in Diamond: The Nitrogen-Vacancy-Hydrogen Complex”, C. Glover, M. E. Newton, P. Martineau, D. J. Twitchen, J. M. BakerWe report the identification of the nitrogen-vacancy-hydrogen complex in a freestanding nitrogen-doped isotopically engineered single crystal diamond synthesized by chemical vapor deposition. The hydrogen atom is located in the vacancy of a nearest-neighbor nitrogen-vacancy defect and appears to be... (Read more)
- 104. Physica B 340-342, 903-907 (2003) , “Pulsed EPR studies of shallow donor impurities in SiC”, J. Isoya, T. Ohshima, N. Morishita, T. Kamiya, H. Itoh, S. YamasakiSpin-lattice relaxation time (T1) and phase memory time (TM) of shallow donors in 3C-, 4H- and 6H-SiC have been measured in time domain by using pulsed EPR technique. The temperature dependence of T1 suggests that the Orbach process should be frozen at relatively high temperatures. Shallow donors in SiC are promising in attaining a sufficiently long phase memory time at temperatures much higher than Si:P. (Read more)
- 105. Physica B 340-342, 156 (2003) , “Electrical and multifrequency EPR study of nonstoichiometric defects in 4H-SiC”, E. N. Kalabukhova, S. N. Lukin, D. V. Savchenko and W. C. MitchelTwo paramagnetic intrinsic defects P and ND1 have been studied in both C-rich n-type 4H-SiC and undoped semi-insulating (s.i.) 4H-SiC in the dark and under illumination of the s.i. sample with light at 140 and 37 GHz in the temperature interval from 4.2 to 77 K. Photo EPR and Hall effect... (Read more)
- 106. Physica B 340-342, 15-24 (2003) , “Defects in SiC”, E. Janzén, I. G. Ivanov, N. T. Son, B. Magnusson, Z. Zolnai, A. Henry, J. P. Bergman, L. Storasta, F. CarlssonRecent results from studies of shallow donors, pseudodonors, and deep level defects in SiC are presented. The selection rules for transitions between the electronic levels of shallow donors in 4H–SiC in the dipole approximation are derived and the ionization energy for the N donor at... (Read more)
- 107. Physica E 17, 320-321 (2003) , “Temperature dependence of electrically detected ESR at filling factor ν=1 in a 2DEG”, Eugene Olshanetsky, Manyam Pilla, Joshua D. Caldwell, Clifford R. Bowers, Jerry A. Simmons and John L. RenoElectrically detected electron spin resonance (ESR) was measured as a function of temperature for 0.3–4.2 K in a AlGaAs/GaAs multiple quantum well sample at filling factor ν=1. The ESR amplitude exhibits a maximum at about 2.2 K and vanishes with increased or decreased temperature. To... (Read more)
- 108. Polyhedron 22, 225-233 (2003) , “Study on guanidino–carboxylate interactions in copper(II) ternary complexes of guanidinoacetic acid with glutamic and aspartic acids”, Jussara Lopes de Miranda and Judith FelcmanThe possibility of occurrence of biological relevant guanidino–carboxylate interactions was investigated in ternary systems involving guanidinoacetic (Gaa) and glutamic acid (Glu), aspartic acid (Asp) or glycine (Gly). The study was done in solution using potentiometry, ultraviolet visible... (Read more)
- 109. Semiconductors 37, 918 (2003) , “The Relaxation of the Neutral State of Manganese in Gallium Arsenide”, V. F. Masterov, K. F. Shtel'makh, V. P. Maslov, S. B. Mikhrin, B. E. SamorukovResults of investigations of the longitudinal magnetic relaxation of the neutral state of the Mn0 center in GaAs are presented. Relaxation mechanisms were determined from the broadening of the electron-spinresonance line in the temperature range of 3.4–8.2 K and from the variation in the nuclear relaxation rate in the range of 36–310 K. The nuclear relaxation investigation demonstrates that the electron relaxation is governed by the interaction between lattice vibrations and local vibrations of the center. This allows one to represent the electron relaxation at low temperatures as the consequence of anharmonicity of local vibrations of the electron dipole moment of the Mn0 center. (Read more)
- 110. Semiconductors 37, 872 (2003) , “ESR of Interacting Manganese Centers in Gallium Arsenide”, K. F. Shtel'makh, M. P. Korobkov, I. G. OzerovESR of Mn-doped GaAs is studied. The results indicate the presence of an interstitial impurity state in GaAs:Mn which is involved in the Coulomb interaction with the substitutional Mn states. Analysis of the temperature variations of ESR spectra and the values of the g factor shows that the interstitial center has a d5 electron configuration. The substitutional Mn create a strong random crystal field at the interstitial Mn ion. The results can be explained by assuming the existence of a nonzero dipole moment in the neutral state of Mn. (Read more)
- 111. Appl. Phys. Lett. 81, 622 (2002) , “Role of copper in the green luminescence from ZnO crystals”, N. Y. Garces, L. Wang, L. Bai, N. C. Giles, L. E. Halliburton, G. CantwellElectron paramagnetic resonance (EPR), photoluminescence, and infrared optical absorption have been used to investigate a ZnO crystal before and after a thermal anneal for 1 h in air at 900 °C. The sample was an undoped high quality crystal grown by the chemical vapor transport method. In... (Read more)
- 112. Appl. Phys. Lett. 81, 3945 (2002) , “Photoexcitation-electron-paramagnetic-resonance studies of the carbon vacancy in 4H-SiC”, N. T. Son, B. Magnusson, and E. JanzénPhotoexcitation-electron-paramagnetic-resonance (photo-EPR) studies were performed on p-type 4H-SiC irradiated with 2.5 MeV electrons. At W-band frequencies (~95 GHz) different EPR spectra could be well separated, allowing a reliable determination of the ground state levels of the... (Read more)
- 113. Appl. Phys. Lett. 81, 1128-1130 (2002) , “Electron spin resonance study of interface defects in atomic layer deposited hafnium oxide on Si”, A. Y. Kang, P. M. Lenahan, J. F. Conley Jr., R. SolankiWe report electron spin resonance (ESR) observation of interface defects at the HfO2/(111)Si boundary for HfO2 films deposited via atomic layer chemical vapor deposition using Hf(NO3)4 as a precursor. We observe several signals, dominated by one due to a... (Read more)
- 114. Appl. Phys. Lett. 80, 4753-4755 (2002) , “Characterization of S centers generated by thermal degradation in SiO2 on (100)Si”, A. Stesmans, B. Nouwen, D. Pierreux, and V. V. Afanas'evThe structural degradation of thermal SiO2 on (100)Si under isochronal vacuum annealing in the range Tan = 950 °C1250 °C was monitored by electron spin resonance (ESR) in terms of point defect creation, including... (Read more)
- 115. Appl. Phys. Lett. 80, 410 (2002) , “The level position of a deep intrinsic defect in 4H-SiC studied by photoinduced electron paramagnetic resonance”, M. E. Zvanut and V. V. KonovalovPhotoinduced electron paramagnetic resonance studies performed on nominally semi-insulating, high purity 4H-SiC have revealed charge transfer from an intrinsic defect (ID) to both the shallow boron acceptor and nitrogen donor. At 4 K, incident photon energy between 1.0 and 1.7 eV produces an... (Read more)
- 116. Appl. Phys. Lett. 80, 1945-1947 (2002) , “Density of states of Pb1 Si/SiO2 interface trap centers”, J. P. Campbell and P. M. LenahanThe electronic properties of the (100) Si/SiO2 interfacial defect called Pb1 are quite controversial. We present electron spin resonance measurements that demonstrate: (1) that the Pb1 defects have levels in the silicon band gap, (2) that... (Read more)
- 117. Appl. Phys. Lett. 80, 1334 (2002) , “Production of nitrogen acceptors in ZnO by thermal annealing”, N. Y. Garces, N. C. Giles, L. E. Halliburton, G. Cantwell, D. B. Eason, D. C. Reynolds, D. C. LookNitrogen acceptors are formed when undoped single crystals of zinc oxide (ZnO) grown by the chemical-vapor transport method are annealed in air or nitrogen atmosphere at temperatures between 600 and 900 °C. After an anneal, an induced near-edge absorption band causes the crystals to appear... (Read more)
- 118. Appl. Phys. Lett. 80, 1261-1263 (2002) , “Hole trapping in ultrathin Al2O3 and ZrO2 insulators on silicon”, V. V. Afanas'ev and A. StesmansOptical injection of electron-hole pairs in 35 nm thick layers of SiO2, Al2O3, ZrO2 and their stacks on (100)Si is found to result in positive oxide charging, suggesting trapping of holes. In thin layers of the high-permittivity metal oxides... (Read more)
- 119. J. Phys. Chem. Solids 63, 555-559 (2002) , “OH− impurities in co-doped LiNbO3:Cr 3+:ZnO congruent crystals”, G. A. Torchia, J. O. Tocho , F. JaqueInfrared optical absorption has been used to study OH−impurities into congruent co-doped LiNbO3:Cr3+:ZnO crystals doped with different Zn2+ concentration. The OH− IR absorption spectra present three bands that can be associated with different OH− complex centres available in the... (Read more)
- 120. Mater. Sci. Eng. 93, 39-48 (2002) , “Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)”, E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas, Jr , W. J. Moore, B. V. Shanabrook, A. E. Wickenden, D. D. Koleske, R. L. Henry, M. W. Bayerl, M. S. Brandt, H. Obloh, P. Kozodoy, S. P. DenBaars, U. K. Mishra, S. Nakamura, E. Haus, J. S. Speck, J. E. Van Nostrand, M. A. Sanchez, E. Calleja, A. J. Ptak, T. H. Myers and R. J. MolnarWe will highlight our recent work on the properties of residual defects and dopants in GaN heteroepitaxial layers and on the nature of recombination from InGaN single quantum well (SQW) light emitting diodes (LEDs) through magnetic resonance techniques. Electron paramagnetic resonance (EPR) and... (Read more)
- 121. Mater. Sci. Eng. A 332, 356-361 (2002) , “The preparation and characterization of ZnO ultrafine particles”, Liqiang Jing, Zili Xu, Jing Shang, Xiaojun Sun, Weimin Cai and Haichen GuoIn this paper, ZnO ultrafine particles (UFPs) were prepared by the thermal decomposition method of the precursor, zinc carbonate hydroxide. The structure and properties of the as-prepared ZnO UFPs were studied using TEM, XRD, BET, SPS, ESR, Raman, XPS and UV–Vis absorption spectroscopy. It... (Read more)
- 122. Mater. Sci. Eng. B 94, 8-13 (2002) , “Annealing effects in ZnO and ZnO–SnO2 powders during grinding”, M. Kakazey, J. Sanchez-Mondragon, G. Gonzalez-Rodriguez, M. Vlasova, T. Sreckovic, N. Nikolic ,M. M. RisticWe report on the differences in the defect structure of ZnO particles that take place at the grinding of powders of pure ZnO and mixture ZnO–SnO2. The defect structure formed was studied by electron paramagnetic resonance (EPR). The results demonstrate that a sequential two-stage thermal... (Read more)
- 123. Phys. Rev. B 66, 45201 (2002) , “Single ion anisotropy of Mn-doped GaAs measured by electron paramagnetic resonance”, O. M. Fedorych, E. M. Hankiewicz, Z. Wilamowski, J. SadowskiAn electron-paramagnetic-resonance (EPR) study of molecular-beam-epitaxy-grown Mn-doped GaAs is presented. The resolved fine structure in insulating Ga1-xMnxAs allows us to evaluate the crystal-field parameters of the spin Hamiltonian. The exchange narrowing of the structure,... (Read more)
- 124. Phys. Rev. B 66, 235202 (2002) , “Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy with S=3/2 and C3v symmetry in n-type 4H-SiC”, N. Mizuochi, S. Yamasaki, H. Takizawa, N. Morishita, T. Ohshima, H. Itoh, J. IsoyaThe TV2a center, which was suggested to be the excited triplet state (S=1) of the neutral silicon vacancy related defect [Sörman et al., Phys. Rev. B 61, 2613 (2000)] in the electron-irradiated n-type 4H-SiC has been studied by continuous wave and pulsed electron paramagnetic resonance... (Read more)
- 125. Phys. Rev. B 65, 85312 (2002) , “Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition”, E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas Jr, W. J. Moore, B. V. Shanabrook, R.L. Henry, A. E. Wickenden, D. D. Koleske, H.Obloh, P. Kozodoy, S. P. DenBaars, U. K. MishraElectron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) experiments have been performed on a set of GaN epitaxial layers doped with Mg from 2.5×1018 to 5.0×1019 cm-3. The samples were also characterized by secondary-ion-mass... (Read more)
- 126. Phys. Rev. B 65, 205202 (2002) , “Defects observed by optical detection of electron paramagnetic resonance in electron-irradiated p-type GaN”, L. S. Vlasenko, C. Bozdog, G. D. Watkins, F. Shahedipour, B. W. WesselsIrradiation of p-type (Mg-doped) GaN in situ at 4.2 K by 2.5 MeV electrons reduces the visible luminescence and creates a broad luminescence band in the infrared at ?0.95?eV. Upon annealing at 180 K, partial recovery of the visible luminescence occurs and a well resolved S=1 center is observed by... (Read more)
- 127. Phys. Rev. Lett. 89, 135507 (2002) , “Diffusion and Reactions of Hydrogen in F2-Laser-Irradiated SiO2 Glass”, Koichi Kajihara, Linards Skuja, Masahiro Hirano, and Hideo HosonoThe diffusion and reactions of hydrogenous species generated by single-pulsed F2 laser photolysis of SiO-H bond in SiO2 glass were studied in situ between 10 and 330Â K. Experimental evidence indicates that atomic hydrogen (H0) becomes mobile even at temperatures as... (Read more)
- 128. Phys. Rev. Lett. 88, 45504 (2002) , “Hydrogen: A Relevant Shallow Donor in Zinc Oxide”, Detlev M. Hofmann, Albrecht Hofstaetter, Frank Leiter, Huijuan Zhou, Frank Henecker, Bruno K. Meyer, Sergei B. Orlinskii, Jan Schmidt, Pavel G. BaranovElectron paramagnetic resonance and Hall measurements show consistently the presence of two donors ( D1 and D2) in state-of-the-art, nominally undoped ZnO single crystals. Using electron nuclear double resonance it is found that D1 shows hyperfine interaction with more than 50 shells of surrounding... (Read more)
- 129. Appl. Catalysis A 213, 173-177 (2001) , “In situ electron paramagnetic resonance (EPR) study of surface oxygen species on Au/ZnO catalyst for low-temperature carbon monoxide oxidation”, Zhengping Hao, Liangbo Fen, G. Q. Lu, Jianjun Liu, Lidun An and Hongli WangSome paramagnetic superoxide ions detectable by electron paramagnetic resonance (EPR) can be generated on Au/ZnO catalyst by oxygen adsorption at room temperature as well as at 553 K. In both the cases, the O2− ions are present on the catalyst surface. The disappearance of the O2−... (Read more)
- 130. Appl. Surf. Sci. 180, 308-314 (2001) , “The surface properties and photocatalytic activities of ZnO ultrafine particles”, Liqiang Jing, Zili Xu, Xiaojun Sun, Jing Shang and Weimin CaiWe prepared ZnO ultrafine particles (UFPs) by thermal decomposition of the precursor zinc carbonate hydroxide. The surface properties of the as-prepared particles were studied using TEM, XRD, BET, SPS, EPR, IR, and XPS. The surface contains active species such as oxygen deficiencies and hydroxyl... (Read more)
- 131. Diamond Relat. Mater. 10, 580-584 (2001) , “Phosphorus site after CIRA implantation of type IIa diamond”, N. Casanova, E. Gheeraert, A. Deneuville, C. Uzan-Saguy and R. KalishA set of type IIa diamond crystals was processed by cold implantation and rapid annealing at 1050°C ex situ annealing at 1400°C and investigated by ESR measurement. The ESR spectra of CIRA and post-annealed samples show an isotropic line at g=2.003, a set of anisotropic hyperfine lines,... (Read more)
- 132. Diamond Relat. Mater. 10, 480-484 (2001) , “EPR study of preferential orientation of crystallites in N-doped high quality CVD diamond”, S. Nokhrin, J. Rosa, M. Vanecek, A. G. Badalyan and M. NesladekThe directions of preferential growth of free-standing optical-quality CVD diamond wafers have been investigated with the help of electron paramagnetic resonance (EPR). EPR signals of the well-known P1 centre (substitutional nitrogen) have been used as a probe. A computer simulation of EPR spectra... (Read more)
- 133. Diamond Relat. Mater. 10, 434-438 (2001) , “Interstitial aggregates in diamond”, J. P. Goss, B. J. Coomer, R. Jones, T. D. Shaw, P. R. Briddon and S. ÖbergTheoretical modelling of magnetic resonance signals lead to convincing models for the first three self-interstitial aggregates in diamond. These in turn suggest the manner in which larger more stable aggregates including the platelet, observed in annealed type I diamonds, are formed. (Read more)
- 134. Diamond Relat. Mater. 10, 1681-1683 (2001) , “EPR and optical imaging of the growth-sector dependence of radiation-damage defect production in synthetic diamond”, G. A. Watt, M. E. Newton and J. M. BakerEPR imaging data are presented for the distribution of single substitutional nitrogen (P1) in a synthetic diamond of mixed IIa/Ib character, and compared with the distribution of the di-001-split interstitial (R1) produced during an electron irradiation. Since the defects are localised in different... (Read more)
- 135. J. Phys.: Condens. Matter 13, 8957-8964 (2001) , “Determination of the W8 and AB5 defect levels in the diamond gap”, R. N. Pereira, W. Gehlhoff, N. A. Sobolev, A. J. Neves, D. BimbergElectron paramagnetic resonance (EPR) and photo-EPR investigations on synthetic diamond crystals have allowed an unambiguous determination of nickel-related defect levels in the diamond bandgap. Indirect photoinduced recharging of the nitrogen donor and detection of two... (Read more)
- 136. J. Phys.: Condens. Matter 13, 2053-2060 (2001) , “Possible evidence of a copper-related electron paramagnetic resonance centre in diamond”, J. M. BakerThe EPR centre W36, found in natural type IIb diamond, has been previously attributed to a boron-related point defect, largely on account of its four line hyperfine structure attributed to 11B. The attribution has been re-examined, and no simple boron-related site has been found... (Read more)
- 137. J. Phys.: Condens. Matter 13, 2045-2051 (2001) , “An annealing study of the R1 EPR centre (the neatest-neighbour di-<100>-split self-interstitial) in diamond”, D. J. Twitchen, M. E. Newton, J. M. Baker, T. R. Anthony, W. F. BanholzerResults are reported of both isochronal and isothermal annealing studies of the R1 EPR centre (known to be a pair of parallel nearest-neighbouring 100-split self-interstitials) produced by 2 MeV electron irradiation of synthetic type IIa diamonds of very low defect concentration before... (Read more)
- 138. Mater. Sci. Eng. R 33, 135-207 (2001) , “Comprehensive characterization of hydride VPE grown GaN layers and templates”, H. MorkoçGaN community has recently recognized that it is imperative that the extended, and point defects in GaN and related materials, and the mechanisms for their formation are understood. This is a first and an important step, which must be followed by defect reduction before full implementation of this... (Read more)
- 139. Phys. Rev. B 64, 41307 (2001) , “Gate-controlled electron spin resonance in GaAs/AlxGa1-xAs heterostructures”, H. W. Jiang, Eli YablonovitchThe electron spin resonance (ESR) of two-dimensional electrons is investigated in a gated GaAs/AlGaAs heterostructure. We found that the ESR resonance frequency can be tuned by means of a gate voltage. The front and back gates of the heterostructure produce opposite g-factor shift, suggesting that... (Read more)
- 140. Phys. Rev. B 64, 245212 (2001) , “Structure of the silicon vacancy in 6H-SiC after annealing identified as the carbon vacancy-carbon antisite pair”, Th. Lingner, S. Greulich-Weber, J.-M. Spaeth, U. Gerstmann, E. Rauls, Z. Hajnal, Th. Frauenheim, H. OverhofWe investigated radiation-induced defects in neutron-irradiated and subsequently annealed 6H-silicon carbide (SiC) with electron paramagnetic resonance (EPR), the magnetic circular dichroism of the absorption (MCDA), and MCDA-detected EPR (MCDA-EPR). In samples annealed beyond the annealing... (Read more)
- 141. Phys. Rev. B 64, 235202 (2001) , “Photosensitive electron paramagnetic resonance spectra in semi-insulating 4H SiC crystals”, E. N. Kalabukhova, S. N. Lukin, A. Saxler, W. C. Mitchel, S. R. Smith, J. S. Solomon, A. O. EvwarayePhotosensitive electron paramagnetic resonance (EPR) investigations of unintentionally doped, semi-insulating (s.i.) 4H–SiC have been made at 37 GHz and 77 K including photoexcitation and photoquenching experiments. In the dark the EPR spectrum consists of a low intensity line due to boron on the... (Read more)
- 142. Phys. Rev. B 64, 201308 (2001) , “Magnetic-field pinning of a dynamic electron-spin-resonance line in a GaAs/AlxGa1-xAs heterostructure”, Chris Hillman, H. W. JiangElectrically detected electron spin resonance (ESR) is used to study the hyperfine interaction of the two-dimensional electrons and the nuclei of the host lattice in a GaAs/AlGaAs heterostructure. Under microwave and radio-frequency double excitations, we have observed that the ESR line can be... (Read more)
- 143. Phys. Rev. B 64, 115308 (2001) , “Experimental Investigation of Band Structure Modification in Silicon Nanocrystals”, B. J. Pawlak, T. Gregorkiewicz, C. A. J. Ammerlaan, W. Takkenberg, F. D. Tichelaar, P. F. A. Alkemade.Experimental studies of size-related effects in silicon nanocrystals are reported. We present investigations carried out on nanocrystals prepared from single-crystal Si:P wafer by ball milling. The average final grain dimension varied depending on the way of preparation in the range between 70 and... (Read more)
- 144. Phys. Rev. B 64, 085206 (2001) , “Electronic structure of the N donor center in 4H-SiC and 6H-SiC”, A. v. Duijn-Arnold, R. Zondervan, J. Schmidt, P. G. Baranov, E. N. MokhovIn this paper, we present high-frequency (95 GHz) pulsed electron paramagnetic resonance (EPR) and electron nuclear double resonance (ENDOR) measurements on the nitrogen (N) donor in 4H-SiC (k site) and 6H-SiC (h, k1, and k2 sites according to the accepted classification). From... (Read more)
- 145. Phys. Rev. B 64, 041201 (2001) , “Combined optical and microwave approach for performing quantum spin operations on the nitrogen-vacancy center in diamond”, Forrest T. Charnock and T. A. KennedyElectron spin echoes were performed on nitrogen-vacancy (N-V) centers in diamond using optical polarization and detection and 35 GHz microwave control. The experiments demonstrate an approach to quantum information in the solid state. A phase memory time of 3.6??s was measured, and coupling of the... (Read more)
- 146. Phys. Rev. B 63, 233202 (2001) , “Tetrahedral Mni4 Cluster in Silicon”, J. Wedekind, H. Vollmer, R. Labusch.Mni40 clusters were investigated by electron paramagnetic resonance in silicon specimens with initial doping concentrations between 1.5×1015?P cm-3 and 5×1016?B cm-3. In n-type samples and in intrinsic samples, we obtained the EPR... (Read more)
- 147. Phys. Rev. B 63, 201201(R) (2001) , “Carbon vacancy-related defect in 4H and 6H SiC”, N. T. Son, P. N. Hai, E. JanzénAn electron paramagnetic resonance (EPR) spectrum was observed at temperatures above 25 K in p-type 4H and 6H SiC irradiated with electrons. The center has C3V symmetry with an electron spin S=1/2. Using high frequency (?95 GHz) EPR it was possible to obtain the detailed hyperfine... (Read more)
- 148. Phys. Rev. B 63, 195208 (2001) , “Self-interstitial aggregation in diamond”, J. P. Goss, B. J. Coomer, R. Jones, T. D. Shaw, P. R. Briddon, M. Rayson, S. ÖbergFirst-principles methods are used to investigate the self-interstitial and its aggregates in diamond. The experimental assignment of the spin-1 R2 EPR center to the single interstitial has been questioned because of the small fine-structure term observed. We calculate the spin-spin interaction... (Read more)
- 149. Phys. Rev. B 63, 165204 (2001) , “g values of effective mass donors in AlxGa1-xN alloys”, M. W. Bayerl, M. S. Brandt, T. Graf, O. Ambacher, J. A. Majewski, M. Stutzmann, D. J. As, K. LischkaElectron spin resonance experiments were performed on Si-doped wurtzite and zinc-blende GaN and Si-doped wurtzite AlxGa1-xN alloys with x=0.15, 0.32, 0.52, 0.75, and 1. For zinc-blende GaN, an isotropic g factor of 1.9475 is found. The g tensors of the silicon effective mass... (Read more)
- 150. Phys. Rev. Lett. 87, 45502 (2001) , “Silicon Antisite in 4H SiC”, N. T. Son, P. N. Hai, E. JanzénElectron paramagnetic resonance spectrum with C3V symmetry and a spin S = 1/2 has been observed in p-type, electron-irradiated 4H SiC. Based on the observed 29Si hyperfine structures it is suggested that the defect is the isolated silicon antisite (SiC). The spin... (Read more)
- 151. Phys. Rev. Lett. 86, 1054 (2001) , “Electron Spin Resonance Observation of the Si(111)- (7×7) Surface and Its Oxidation Process”, Takahide Umeda, Masayasu Nishizawa, Tetsuji Yasuda, Junichi Isoya, Satoshi Yamasaki, and Kazunobu TanakaElectron spin resonance (ESR) observation of dangling-bond states on the Si(111)- (7×7) surface is demonstrated for the first time. The ESR spectra clearly show that a reaction of molecular oxygen with the Si(111)- (7×7) surface is associated with the appearance of a new dangling-bond center at... (Read more)Si SiO2| EPR STM/AFM/SPM| Oxygen Pb Ps0 Ps1 Silicon dangling-bond interface surface .inp files: Si/surface(111) | last update: Masatoshi Sasaki
- 152. phys. stat. sol. (a) 186, 215-220 (2001) , “First Principles Study of the Self-Interstitial Defect in Diamond”, J. P. Goss, R. Jones, T. D. Shaw, M. J. Rayson, P. R. BriddonFirst principles techniques have been employed to examine the isolated self-interstitial in diamond. The assignment of the R2 EPR center to the self-interstitial has been questioned because of the small fine structure term. We have calculated the spin-spin interaction tensor, which resolves the... (Read more)
- 153. phys. stat. sol. (a) 186, 199-206 (2001) , “Characterization of Defects in as-Grown CVD Diamond Films and HPHT Diamond Powders by Electron Paramagnetic Resonance”, K. Iakoubovskii, A. StesmansSeveral defect centers, labeled as KUL1-7, have been detected by electron paramagnetic resonance in CVD diamond films and synthetic diamond powders. Their g values were determined relatively to the P1 (NS0) center, for which the value of g = 2.00216(1) with... (Read more)
- 154. phys. stat. sol. (a) 186, 167-176 (2001) , “What We Have Learned about Intrinsic Defects in Silicon: A Help in Understanding Diamond?”, G. D. WatkinsWhat we have established by electron paramagnetic resonance (EPR) studies in silicon concerning the properties of its intrinsic defects (vacancies and interstitials) and their interactions with other defects is reviewed. The lessons learned are compared to what is currently being observed in... (Read more)
- 155. Physica B 308-310, 976-979 (2001) , “Magnetic resonance studies of ZnO”, W. E. Carlos, E. R. Glaser and D. C. LookWe have used EPR and ODMR to study state-of-the-art bulk ZnO single crystals. Most of the samples are n-type; however, under certain conditions (e-irradiated or annealed), we observe a center due to residual nitrogen (g||=1.9953, g=1.9633 and Aiso=1.225 mT, Aaniso=0.864 mT). The N center is a... (Read more)
- 156. Physica B 308-310, 749-752 (2001) , “Magneto-optical and ODEPR investigations of native defects in substrate-free LT-MBE grown GaAs”, I. Tkach, K. Krambrock, C. Steen, P. Kiesel and J. -M. SpaethAs-grown substrate-free LT-GaAs (200°C) and annealed samples (up to 660°C) have been investigated with magnetic circular dichroism of absorption (MCDA) and optically detected electron paramagnetic resonance (MCDA-EPR) in K- and W-bands. MCDA-EPR spectra of all samples reveal several... (Read more)
- 157. Physica B 308-310, 730 (2001) , “Deep level defects in sublimation-grown 6H silicon carbide investigated by DLTS and EPR”, K. Irmscher, I. Pintilie, L. Pintilie and D. Schulz6H-SiC bulk single crystals grown by physical vapor transport (PVT) were investigated by deep-level transient spectroscopy (DLTS) and electron paramagnetic resonance (EPR). One of the observed deep level defects was identified as isolated tungsten on Si sites by EPR. The electron spin of could be... (Read more)
- 158. Physica B 308-310, 691 (2001) , “Contactless studies of semi-insulating 4H–SiC”, W. E. Carlos, W. J. Moore, G. C. B Braga, J. A. Freitas, Jr. , E. R. Glaser and B. V. ShanabrookSemi-insulating (SI) silicon carbide is important for applications in high-power, high-frequency electronics, such as SiC MESFETs and GaN FETs. In this work, we discuss the use of low-temperature electron paramagnetic resonance (EPR), room- and low-temperature FTIR and photoluminescence as potential... (Read more)
- 159. Physica B 308-310, 621 (2001) , “Positively charged carbon vacancy in 6H–SiC: EPR study”, V. Ya. Bratus, I. N. Makeeva, S. M. Okulov, T. L. Petrenko, T. T. Petrenko and H. J. von BardelebenThe low-temperature X-band EPR study of Ky1 and Ky2 centers assigned to positively charged carbon vacancy (VC+) in two quasicubic sites of 6H–SiC crystal is presented. The CS symmetry, spin S=1/2 and close coincidence of the g-tensor components have been revealed. The principal values of... (Read more)
- 160. Physica B 308-310, 51-57 (2001) , “Magnetic resonance studies of defects in GaN with reduced dislocation densities”, E. R. Glaser, J. A. Freitas, Jr. , G. C. Braga, W. E. Carlos, M. E. Twigg, A. E. Wickenden, D. D. Koleske, R. L. Henry, M. Leszczynski, I. Grzegory, T. Suski, S. Porowski, S. S. Park, K. Y. Lee and R. J. MolnarMagnetic resonance experiments, including optically detected magnetic resonance (ODMR) and electron paramagnetic resonance (EPR), have been performed on Si-doped homoepitaxial GaN layers grown by MOCVD and on high quality, free-standing (200 μm-thick) GaN grown by HVPE. This allowed us to... (Read more)
- 161. Physica B 304, 12 (2001) , “Origin of yellow luminescence in n-GaN induced by high-energy 7 MeV electron irradiation”, Yasuhiko Hayashi, Tetsuo Soga, Masayoshi Umeno, Takashi JimboThe yellow luminescence band in high-energy 7 MeV electron-irradiated n-GaN is investigated as a function of electron irradiation dose. Both the yellow-band intensity and the near-bandedge photoluminescence (PL) intensity decrease continually with increasing electron irradiation dose. The decrease... (Read more)
- 162. Physica B 302-303, 88-100 (2001) , “Magnetospectroscopy of acceptors in "blue" diamonds”, Hyunjung Kim, A. K. Ramdas, S. Rodriguez, Zdenka Barticevic, M. Grimsditch and T. R. AnthonyNaturally occurring, nitrogen-free, p-type diamond—now known to be boron-doped—as well as man-made diamonds deliberately doped with boron display an electronic Raman transition, Δ′, originating in the 1s(p3/2) : Γ8 ground state of the acceptor and terminating in its... (Read more)
- 163. Physica B 302-303, 249-256 (2001) , “Hydrogen-Enhanced Clusterization of Intrinsic Defects and Impurities in Silicon”, B. N. Mukashev, Kh. A. Abdullin, Yu. V. Gorelkinskii, M. F. Tamendarov and S. Zh. TokmoldinFormation of intrinsic and impurity defect complexes in hydrogenated monocrystalline silicon is studied. Hydrogen was incorporated into samples by different ways: either by proton implantation at 80 and 300 K, or by annealing at 1250°C for 30–60 min in a sealed quartz ampoule containing... (Read more)
- 164. Physica B 302-303, 233-238 (2001) , “Complexes of Gold and Platinum with Hydrogen in Silicon”, P. T. Huy and C. A. J. AmmerlaanThree centers that involve gold or platinum and hydrogen have been observed in n-type hydrogenated silicon by electron paramagnetic resonance. The first two centers, labeled Si-NL63 and Si-NL64, were detected in the gold-doped samples revealing hyperfine interaction with two gold atoms for the... (Read more)
- 165. Physica B 302-303, 212-219 (2001) , “Magnetic resonance studies of shallow donor centers in hydrogenated Cz–Si crystals”, B. Langhanki, S. Greulich-Weber, J. –M. Staeth, V. P. Markevich, L. I. Murin, T. Mchedlidze, M. Suezawa.A complex magnetic resonance study (EPR, electrically detected EPR, ENDOR) of hydrogen-related radiation-induced shallow donors in silicon has been performed. Three species of this donor family (D1–D3) were observed earlier by means of infrared absorption measurements in hydrogenated... (Read more)
- 166. Physica B 294-295, 298-301 (2001) , “High field magnetoresistance and ESR measurements on Ni stripes on GaAs substrate”, A. Matsuo, M. Taki, S. A. Haque, Y. Yamamoto, T. Kikutani, S. Yamada, H. Nojiri, M. Motokawa and H. HoriNi nanowires fabricated on a GaAs substrate, which have width narrower than 500 nm and thickness 50 nm, showed an antiferromagnetic-like domain structure. Many Ni nanowires fabricated on GaAs using the electron beam lithography technique have been studied by electron spin resonance (ESR). Splitting... (Read more)
- 167. Physica E 10, 57-61 (2001) , “Millimeter wave and DC investigations of spin effects in the 2DES of AlGaAs/GaAs”, R. Meisels, K. Dybko, F. Ziouzia, F. Kuchar, R. Deutschmann, G. Abstreiter, G. Hein and K. PierzThe spin properties of the 2DES in AlGaAs/GaAs heterostructures are studied via the electron spin resonance (ESR) of conduction electrons and via the temperature dependence of the DC-σxx(B) conductivity component. The ESR is investigated at integer (ν=1) and fractional filling factors... (Read more)
- 168. Physica E 10, 399-402 (2001) , “Codoping effect of O2 into Er-doped InP epitaxial layers grown by OMVPE”, H. Ohta, C. Urakawa, Y. Nakashima, J. Yoshikawa, T. Koide, T. Kawamoto, Y. Fujiwara , Y. TakedaThe temperature dependence of ESR in InP:Er and the O2 codoping effect in InP:Er have been studied by X-band ESR measurement at low temperature. The ESR at around g=6, which corresponds to Er3+ site with Td symmetry, lost it's intensity quickly as the temperature is increased and disappeared above... (Read more)
- 169. Physica E 10, 395-398 (2001) , “ESR study of GaAs:Er codoped with oxygen grown by organometallic vapor phase epitaxy”, J. Yoshikawa, C. Urakawa, H. Ohta, T. Koide, T. Kawamoto, Y. Fujiwara and Y. TakedaX-band ESR measurements of GaAs:Er grown at 543°C by organometallic vapor phase epitaxy (OMVPE) with and without an additional O2 flow (samples I and II, respectively) have been performed at 3.5 K. Sample I shows an isotropic ESR signal around g=6 together with several anisotropic ESR signals... (Read more)
- 170. Physica E 10, 175-180 (2001) , “Monitoring the sign reversal of the valence band exchange integral in (Ga,Mn)As”, W. Heimbrodt, Th. Hartmann, P. J. Klar, M. Lampalzer, W. Stolz, K. Volz, A. Schaper, W. Treutmann, H. -A. Krug von Nidda, A. Loidl, T. Ruf and V. F. SapegaWe report the successful growth of magnetic Ga1−xMnxAs layers on (1 0 0) GaAs substrates by metal-organic vapour-phase epitaxy. Depending on the growth parameters, two different magnetic phases of Ga1−xMnxAs can be grown. (i) At low Mn-concentrations, Ga1−xMnxAs alloys are... (Read more)
- 171. Proc. SPIE 4413, 50 (2001) , “Growth, structure, and spectroscopic characterization of the Mn-doped GaN thin films”, Vyacheslav D. Bondar, Igor Kukharsky, Bohdan V. Padlyak, Volodymyr Davydov, Bohdan O. Simkiv, Marek Grinberg, Benedykt KuklinskiThe technologies of fabrication of thin film phosphors based on gallium nitride using rf-magnetron sputtering are developed and properties of films are studied. The dependence of GaN-Mn thin films deposition rate on rf-discharge power, substrate temperature and working gas pressure was estimated.... (Read more)
- 172. Thin Solid Films 395, 266-269 (2001) , “Charge-trapping defects in Cat-CVD silicon nitride films”, T. Umeda, Y. Mochizuki, Y. Miyoshi and Y. NashimotoWe show that Cat-CVD silicon nitride films contain more than 1019 cm−3 nitrogen-bonded Si dangling bonds, similarly to the case for conventional CVD films. However, the charge-trapping behavior of the Cat-CVD films is found to be quite different, in spite of the same origin for the dominant... (Read more)
- 173. Chem. Phys. Lett. 322, 273-279 (2000) , “Room-temperature field dependence of the electron spin–lattice relaxation times of paramagnetic P1 and P2 centers in diamond”, Cornelis J. Terblanche and Eduard C. ReynhardtElectron spin–lattice relaxation (SLR) times of P1 and P2 centers have been measured at 300 K at X-band and W-band for one synthetic (type-Ib) and three natural (type-Ia) diamonds using electron paramagnetic resonance spectroscopy. Bi-exponential SLR, with a fast and a slow component, was... (Read more)
- 174. Diamond Relat. Mater. 9, 883-886 (2000) , “Mechanisms of nitrogen aggregation in nickel- and cobalt-containing synthetic diamonds”, V. A. Nadolinny, A. P. Yelisseyev, J. M. Baker, D. J. Twitchen, M. E. Newton, B. N. Feigelson and O. P. YuryevaWe present a study of the point defects observed in as-grown and annealed synthetic diamonds using electron paramagnetic resonance (EPR) and infrared spectroscopy. The diamonds were grown by the temperature gradient HPHT method in a split sphere apparatus using Fe–Ni–C or... (Read more)
- 175. Diamond Relat. Mater. 9, 424-427 (2000) , “Experimental and theoretical studies of cobalt defects in diamond”, Karl Johnston, Alison Mainwood, Alan T. Collins, Gordon Davies, Daniel Twitchen, Mark Newton and J. M. BakerDiamonds grown with a cobalt/iron solvent catalyst and annealed at 1800°C were cut and polished along the main symmetry directions. The photoluminescence spectrum showed at least four zero phonon lines. One line at 2.367 eV splits and shifts under uniaxial stress indicating that it originates... (Read more)
- 176. Diamond Relat. Mater. 9, 417-423 (2000) , “Spectroscopy of defects and transition metals in diamond”, A. T. CollinsThis article reviews the optical and electron paramagnetic resonance (EPR) studies that have been carried out on diamonds containing nickel-related or cobalt-related defect centres. It is shown that this work is now at a stage where a real understanding may be reached about the nature of the defects... (Read more)
- 177. Diamond Relat. Mater. 9, 337-340 (2000) , “Structural changes in CVD diamond film by boron and nitrogen doping”, Yoshiyuki Show, Toshikazu Matsukawa, Hirokazu Ito, Mitsuo Iwase and Tomio IzumiThe effect of impurity atoms in the defect structures of a diamond film has been studied by electron spin resonance (ESR). It has been observed that introducing boron atoms into the diamond film during chemical vapor deposition (CVD) reduces paramagnetic defects (Pdia and Pac centers) by decreasing... (Read more)
- 178. Diamond Relat. Mater. 9, 1057-1060 (2000) , “New paramagnetic centers in annealed high-pressure synthetic diamond”, A. J. Neves, R. Pereira, N. A. Sobolev, M. H. Nazaré, W. Gehlhoff, A. Näser and H. KandaWe report three new paramagnetic centers found in high-pressure synthetic diamond with high nitrogen and nickel content and annealed at 1600°C. Analysis of the spectra has shown that two of the centers, labeled AB1 and AB2, are related to systems with effective spin S=1/2 and the other is... (Read more)
- 179. J. Appl. Phys. 88, 6265 (2000) , “Doping of n-type 6H–SiC and 4H–SiC with defects created with a proton beam”, A. A. Lebedev, A. I. Veinger, D. V. Davydov, V. V. Kozlovski, N. S. Savkina, A. M. Strel’chukDeep centers in n-type 4HSiC and 6HSiC irradiated with 8 MeV protons have been investigated by capacitance spectroscopy and electron paramagnetic resonance (EPR). Samples were fabricated by sublimation epitaxy or commercially produced by CREE Inc. Research Triangle Park, NC. It is... (Read more)
- 180. J. Appl. Phys. 88, 1784-1787 (2000) , “Electron Spin Resonance Centers Associated with Oxygen Precipitates in Czochralski Silicon Crystals”, M. Koizuka, H. Yamada-Kaneta.We have previously concluded that the oxygen-precipitate-associated defects that we identified by the deep levels at Ev + 0.30 eV and Ec0.25 eV were the Pb centers generated in the interface between the oxygen... (Read more)
- 181. J. Chem. Phys. 113, 744-750 (2000) , “Dynamic nuclear polarization of diamond. III. Paramagnetic electron relaxation times from enhanced 13C nuclear magnetic resonance signals”, Eduard C. Reynhardt and Grant L. HighIt is shown that by varying pulse lengths and delay times in electron spin resonance microwave pulse sequences, designed to enhance 13C nuclear magnetic resonance signals in diamond, and measuring the resulting 13C nuclear magnetic resonance signal, the paramagnetic impurity... (Read more)
- 182. J. Phys.: Condens. Matter 12, 7807-7817 (2000) , “Electron spin resonance characterization of a divacancy-related centre in CVD diamond”, A. Stesmans, B. Nouwen, K. IakoubovskiiThe electron spin resonance characterization of an undocumented paramagnetic centre in chemical vapour deposited diamond is reported. Successful fitting of the powder pattern-like spectrum characterized the originating defect as an S = 1 centre of spectroscopic splitting factor g =... (Read more)
- 183. Mater. Sci. Eng. B 73, 60-63 (2000) , “EPR study of He-implanted Si”, B. Pivac, B. Rakvin, R. Tonini, F. Corni and G. OttavianiElectron paramagnetic resonance has been used to study the influence of thermal treatments on defect evolution in helium-implanted Czochralski single-crystal silicon. It is shown that the thermal treatment induces helium migration and capturing by vacancy clusters that transform into pressurized... (Read more)
- 184. Mater. Sci. Eng. B 71, 263 (2000) , “Comparison of Electronic Structure and Properties of Hydrogen-Associated and Thermal Double Donors in Silicon”, S. Zh. Tokmoldin, B. N. Mukashev, Kh. A. Abdullin, Yu. V. Gorelkinskii and B. PajotInfrared (IR) and electron paramagnetic resonance (EPR) studies of quenching-dependent hydrogen-related double donor (HDD) formed in proton-implanted n-Si and p-Si upon annealing above 300°C were carried out. IR data taken at liquid He and N2 reveal that quenching-dependent IR absorption lines... (Read more)
- 185. Mater. Sci. Eng. B 71, 249 (2000) , “New (S=1) EPR AA17 center in silicon — microplatelets or precursor of platelets?”, Yu. V. Gorelkinskii, Kh. A. Abdullin, B. N. Mukashev.New (S=1) EPR spectrum (labeled Si-AA17) is observed in irradiated high-purity hydrogen-contained silicon after annealing at ≥200°C. The AA17 defect has D3d symmetry with g=2.0028, g=2.0106; A(29Si)=175.0 MHz, A=89.0 MHz; and D=±33.6 MHz, D=±16.8 MHz. It is paramagnetic in a... (Read more)
- 186. Nucl. Instrum. Methods Phys. Res. B 170, 125-133 (2000) , “Electron Paramagnetic Resonance Study of S2 Defects in Hydrogen-Implanted Silicon”, B. Rakvin, B. Pivac, R. Tonini, F. Corni and G. OttavianiElectron paramagnetic resonance spectra of S2 paramagnetic center in Float zone silicon (FZ-Si) and Czochralski silicon (CZ-Si) produced by H+2 ion-implantation and by subsequent annealing have been studied. At room temperature the spectrum exhibits an isotropic line g=2.0066±0.0002, which,... (Read more)
- 187. Phys. Rev. B 62, 8038-8052 (2000) , “Zeeman effect of electronic Raman lines of acceptors in elemental semiconductors: Boron in blue diamond”, H. Kim, Z. Barticevic, A. K. Ramdas, S. Rodriguez, M. Grimsditch, T. R. AnthonyThe Zeeman effect of the electronic Raman transition from 1s(p3/2):?8 to the 1s(p1/2):?7 spin-orbit partner (??) of boron acceptors in diamond is studied with magnetic field B along [001], [111], or [110]. As many as eight Zeeman components of... (Read more)
- 188. Phys. Rev. B 62, 6587-6597 (2000) , “EPR data on the self-interstitial complex O3 in diamond”, D. C. Hunt, D. J. Twitchen, M. E. Newton, J. M. Baker, J. K. Kirui, J. A. van Wyk, T. R. Anthony, W. F. BanholzerA previously unreported defect, which is labeled O3, has been observed in the EPR spectrum of synthetic type-IIa diamonds irradiated at 100 K with 2 MeV electrons. This defect was not observed in identical diamonds whose temperature during electron irradiation was ?300 K. This center has also been... (Read more)
- 189. Phys. Rev. B 62, 16587-16594 (2000) , “ESR and optical evidence for a Ni vacancy center in CVD diamond”, K. Iakoubovskii, A. Stesmans, B. Nouwen, and G. J. AdriaenssensCharacterization of a series of correlated electron-spin resonance (ESR) and photoluminescence (PL) lines in diamond grown by chemical vapor deposition is reported. The series consists of a set of structured PL bands in the range 1.8–2.3 eV, and ESR lines due to an S=1 center with g=2.0039(1) and... (Read more)
- 190. Phys. Rev. B 62, 15702 (2000) , “Microscopic origin of light-induced ESR centers in undoped hydrogenated amorphous silicon”, Takahide Umeda, Satoshi Yamasaki, Junichi Isoya, and Kazunobu Tanaka29Si hyperfine (hf) structures of light-induced electron-spin-resonance (LESR) centers of g=2.004 and 2.01 have been investigated in undoped hydrogenated amorphous silicon (a-Si:H) with different 29Si content (1.6, 4.7,9.1 at. %) by means of pulsed and multifrequency (3,11,34... (Read more)Si| EPR| Boron Silicon amorphous band-tail n-type p-type .inp files: Si/band-tail | last update: Takahide Umeda
- 191. Phys. Rev. B 62, 10841 (2000) , “Vacancy defects in p-type 6H-SiC created by low-energy electron irradiation”, H. J. von Bardeleben, J. L. Cantin, L. Henry, M. F. BartheThe intrinsic defects in p-type 6H-SiC:Al generated by electron irradiation at 300 keV, which is close to the threshold of the silicon atom displacement, have been studied by electron paramagnetic resonance spectroscopy. We observed two dominant irradiation-induced paramagnetic defects:?(i) a... (Read more)
- 192. Phys. Rev. B 62, 10126 (2000) , “Proton-implantation-induced defects in n-type 6H- and 4H-SiC: An electron paramagnetic resonance study”, H. J. von Bardeleben, J. L. Cantin, I. Vickridge, G. BattistigThe microscopic structure and introduction rate of point defects in n-type 6H- and 4H-SiC generated by room-temperature proton implantation have been studied by the electron paramagnetic resonance technique. In order to selectively study the effects of defect introduction in the trace region, 12-MeV... (Read more)
- 193. Phys. Rev. B 61, 9-11 (2000) , “Identification of cobalt on a lattice site in diamond”, D. J. Twitchen, J. M. Baker, and M. E. NewtonWe report the finding of an electron-paramagnetic-resonance (EPR) center, labeled O4, which contains cobalt on a site in the diamond lattice. O4 is observed at low temperatures (<30?K) in high temperature and pressure synthetic diamonds grown with a cobalt containing metal-solvent catalyst after... (Read more)
- 194. Phys. Rev. B 61, 8393-8403 (2000) , “Dissociation Kinetics of Hydrogen-Passivated Pb Defects at the (111)Si/SiO2 Interface”, A. Stesmans.An electron-spin-resonance study has been carried out, both isothermally and isochronically, of the recovery under vacuum annealing from the hydrogen passivated state (symbolized as HPb) of paramagnetic Pb centers (Si3?Si•) at the (111)Si/SiO2... (Read more)
- 195. Phys. Rev. B 61, 7448-7458 (2000) , “Hydrogen passivation of the selenium double donor in silicon:?A study by magnetic resonance”, P. T. Huy, C. A. J. Ammerlaan, T. Gregorkiewicz, D. T. Don.The passivation by hydrogen of selenium double donors in silicon has been investigated by magnetic resonance. Hydrogen was introduced by heat treatment at high temperatures in an atmosphere of water vapor. Two spectra were observed, labeled Si-NL60 and Si-NL61 for further reference, both showing... (Read more)
- 196. Phys. Rev. B 61, 5637 (2000) , “Electron spin resonance of the two-dimensional electron system in AlxGa1-xAs/GaAs at subunity filling factors”, R. Meisels, I. Kulac, F. Kuchar, M. KriechbaumThe electron spin resonance (ESR) of a two-dimensional electron system (2DES) in AlxGa1-xAs/GaAs in the regime of fractional filling (ν<1) of the lowest Landau level is investigated by a photoconductivity technique at millimeter wave frequencies. By performing the experiments... (Read more)
- 197. Phys. Rev. B 61, 4659-4666 (2000) , “Identification of the Oxygen-Vacancy Defect Containing a Single Hydrogen Atom in Crystalline Silicon”, P. Johannesen, B. Bech Nielsen, J. R. Byberg.Float-zone and Czochralski-grown silicon crystals have been implanted with protons or deuterons at ?50 K. Electron paramagnetic resonance measurements reveal a new signal in the spectrum of the Czochralski-grown (oxygen-rich) material. This signal is strongly temperature dependent, displaying a... (Read more)
- 198. Phys. Rev. B 61, 3863-3876 (2000) , “Identification of the neutral carbon ?100?-split interstitial in diamond”, D. C. Hunt, D. J. Twitchen, M. E. Newton, J. M. Baker, T. R. Anthony, W. F. Banholzer, S. S. VagaraliA systematic study has been made of some of the properties of R2, the most dominant paramagnetic defect produced in type-IIa diamond by electron irradiation. R2 has been produced in high-purity synthetic diamonds, which have been irradiated with 2 MeV electrons in a specially developed dewar,... (Read more)
- 199. Phys. Rev. B 61, 2657 (2000) , “Divacancy-Tin Complexes in Electron-Irradiated Silicon Studied by EPR”, M. Fanciulli, J. R. Byberg.n- and p-type float-zone silicon containing 1018-cm-3 tin were irradiated with 2 MeV electrons to a dose of 1018 cm-2 and subsequently examined by electron paramagnetic resonance (EPR). The p-type material yields only the well-known Si-G29 signal due to... (Read more)
- 200. Phys. Rev. B 61, 1918 (2000) , “EPR investigation of manganese clusters in silicon”, J. Martin, J. Wedekind, H. Vollmer, and R. LabuschManganese centers were investigated in silicon specimens with initial doping concentrations between 1.5×1015 P cm-3 and 6×1015 B cm-3. All known Mn centers could be observed but the cluster Mni3Mni was missing in highly-boron-doped... (Read more)
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