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- 201. Appl. Phys. Lett. 68, 403 (1996) , “Correlation between photoluminescence and oxygen vacancies in ZnO phosphors”, K. Vanheusden, C. H. Seager, W. L. Warren, D. R. Tallant, and J. A. VoigtBy combining electron paramagnetic resonance (EPR), optical absorption, and photoluminescence (PL) spectroscopy, a strong correlation is observed between the green 510 nm emission, the free-carrier concentration, and the density of singly ionized oxygen vacancies in commercial ZnO phosphor powders.... (Read more)
- 202. J. Appl. Phys. 79, 7983-7990 (1996) , “Mechanisms behind green photoluminescence in ZnO phosphor powders”, K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, B. E. GnadeWe explore the interrelationships between the green 510 nm emission, the free-carrier concentration, and the paramagnetic oxygen-vacancy density in commercial ZnO phosphors by combining photoluminescence, optical-absorption, and electron-paramagnetic-resonance spectroscopies. We find that the green... (Read more)
- 203. Appl. Phys. Lett. 67, 1280 (1995) , “Impact of Pb doping on the optical and electronic properties of ZnO powders”, K. Vanheusden, W. L. Warren, J. A. Voigt, C. H. Seager, and D. R. TallantElectron paramagnetic resonance (EPR), optical absorption, and photoluminescence (PL) spectroscopy have been combined to characterize Pb-doped ZnO ceramic powders. We observe a decrease in the 2.26 eV emission peak and a concomitant smearing of the band edges, narrowing the effective gap of the... (Read more)
- 204. J. Appl. Phys. 77, 837 (1995) , “Photoluminescence of radiation induced defects in 3C-SiC epitaxially grown on Si”, Hisayoshi Itoh, Masahito Yoshikawa, Isamu Nashiyama, Hajime Okumura, Shunji Misawa, Sadafumi YoshidaPhotoluminescence (PL) has been used to study defects introduced by 1-MeV-electron irradiation in cubic silicon carbide (3C-SiC) films epitaxially grown on Si substrates by means of chemical vapor deposition. A dominant PL line of 1.913 eV observed in 3C-SiC irradiated with electrons was found to... (Read more)
- 205. Phys. Rev. B 51, 1928 (1995) , “Carbon and silicon vacancies in electron-irradiated 6H-SiC”, S. Dannefaer, D. Craigen, D. KerrPositron-lifetime and Doppler-broadening spectroscopies were used to investigate vacancies formed by 2.2- and 10-MeV electrons. Carbon vacancies yield a positron lifetime of 160 ps, only 15 ps longer than the bulk lifetime, and the Doppler-broadening S parameter is very close to that for the bulk.... (Read more)
- 206. J. Non-Cryst. Solids 179, 1-9 (1994) , “The many varieties of E′ centers: a review”, Robert A. WeeksThree varieties of E′ centers with a spin state, S = 1/2, and with a G-tensor, Gx Gy 2.0003, Gz 2.0018, were identified in the early reports on paramagnetic states in irradiated α-quartz. The atomic structure of two of these had an hydrogen ion (proton) in nearby sites and hence... (Read more)
- 207. Proc. symp. on the degradation od electronic devices due to device operation as well as crystalline and process-induced defects 94-1, 221-234 (1994) , ECS (ISBN:1-56677-037-8) , “Spin dependent recombination in Si p-n junctions”, B. K. Meyer , P. Christmann , W. Stadler, H. Overhof, J.-M. Spaeth, S. Greulich-Weber, B. Stich
- 208. Phys. Rev. B 46, 12335 (1992) , “Microscopic mechanism of atomic diffusion in Si under pressure ”, Osamu Sugino and Atsushi OshiyamaWe have performed the first-principles total-energy calculations on the atomic diffusion of group-V impurities in Si, and have revealed the pressure effect on the activation energy of the diffusion. For the vacancy mechanism, the activation energies for P, As, and Sb decrease with pressure. For the... (Read more)
- 209. Phys. Rev. Lett. 67, 2517 (1991) , “Experimental evidence for excitonic mechanism of defect generation in high-purity silica”, T. E. Tsai and D. L. GriscomDirect evidence for the creation of oxygen-vacancy, oxygen-interstitial pairs in SiO2 glasses by an excitonic mechanism is developed from an electron-spin-resonance study of high-purity fused silicas exposed to highly focused 6.4-eV excimer laser light. (Read more)
- 210. Physica B 170, 155-167 (1991) , “Electron paramagnetic resonance of hydrogen in silicon ”, Yu.V. Gorelkinskii, N.N. Nevinnyi
- 211. J. Appl. Phys. 66, 4529 (1989) , “Electron spin resonance in electron-irradiated 3C-SiC”, Hisayoshi Itoh, Naohiro Hayakawa, Isamu Nashiyama, Eiichiro SakumaElectron-irradiation-induced defects in epitaxially grown 3C-SiC crystals have been studied by electron-spin-resonance (ESR) measurements. The results indicate the presence of an isotropic ESR center that consists of five lines equally spaced at about 1.5 G and has a g value of... (Read more)
- 212. Phys. Rev. B 38, 3395-3399 (1988) , “Electrical and Optical Properties of Defects in Silicon Introduced by High-Temperature Electron Irradiation”, Jian-Guo Xu, Fang Lu, and Heng-Hui Sun2-MeV electron irradiation of Si at elevated temperature creates a dominant deep level at the energy Ec-0.36 eV in addition to the oxygen vacancies. This level, which is less significant in room-temperature-irradiated Si, is found to be an efficient recombination center in the present... (Read more)
- 213. Phys. Rev. B 38, 12752(R) (1988) , “Formation energies, abundances, and the electronic structure of native defects in cubic SiC”, C. Wang, J. Bernholc, R. F. DavisThe relative abundance of native point defects in cubic SiC has been studied via ab initio calculations as a function of composition and the Fermi-level position. For Si-rich cubic SiC, the SiC antisite is the dominant defect in n-type material, while the carbon vacancy, which is a double... (Read more)
- 214. Phys. Lett. A 125, 354 (1987) , “EPR Evidence of Helium-Oxygen-Vacancy Complexes in Crystalline Silicon”, Yu. V. Gorelkinskii, N. N. Nevinnyi and S. S. AjazbaevTwo new (S = 1) EPR spectra, labeled Si-AA7 and Si-AA8, arise from a helium-associated defect in crystalline silicon. Both are produced only in Czochralski-grown silicon by helium ion implantation at ≈ 20°C followed by annealing at ≈ 180°C and are stable to ≈... (Read more)Si| EPR| AA10 AA7 AA8 Helium vacancy .inp files: Si/V-He-O2 Si/AA10 Si/V-He-O1 | last update: Takeo Kitamura
- 215. Phys. Rev. B 35, 1582 (1987) , “Electronic and Atomic Structure of the Boron-Vacancy Complex in Silicon”, M. Sprenger, R. van Kemp, E. G. Sieverts, and C. A. J. AmmerlaanIn electron-irradiated boron-doped silicon the electron paramagnetic resonance spectrum Si-G10 has been studied. Earlier this spectrum had tentatively been identified with a boron-vacancy complex in a next-nearest-neighbor configuration. With electron-nuclear double resonance the hyperfine and... (Read more)
- 216. Solid State Commun. 61, 199-202 (1987) , “An EPR study on a new triclinic symmetry defect in neutron-irradiated FZ-silicon”, Wu En, Wu Shu-xian, Mao Jin-Chang, Yan Mao-Xun, Qin Guo-gang
- 217. Phys. Lett. A 110, 157 (1985) , “EPR of Neutral Vacancy-Helium Centers in Silicon”, Yu. V. Gorelkinskii, N. N. Nevinnyi and S. S. AjazbaevIn this letter we report the first observation by EPR of helium-associated defects in solid. Two new (S = 1) EPR spectra, labeled Si-AA5 and Si-AA6, arise from the association of helium and intrinsic defects in crystalline silicon. Both are produced by helium ion implantation at room temperature and... (Read more)
- 218. phys. stat. sol. (a) 92, K53 (1985) , “Low Symmetry Centre in Silicon”, A. V. Dvurechenskii, V. V. Suprunchik.Investigation of the defect formation in heavily doped silicon irradiated by high dose of electrons have led to the discovery of new types of defects /1, 2/. The present note is the next one of this series. A new centre is investigated in p-type silicon irradiated by neutrons. (Read more)Si| EPR neutron-irradiation| A5 C1 H8 P3 P6 Sii Vsi interstitial p-type triclinic vacancy .inp files: Si/H8/H8.inp | last update: Takahide Umeda
- 219. phys. stat. sol. (a) 86, 313 (1984) , “New EPR Defects in Si<Al>”, A. V. Dvurechenskii, B. P. Kashnikov, V. V. Suprunchik.Two new paramagnetic centres, labeled Si-H5 and Si-H6 are found in silicon containing aluminium (6 × 1017 to 5 × 1018 cm-3) and irradiated with high dose of 1 Me V electrons (up to 2 × 1020 cm-2). Spin-Hamiltonian constants of the Si-H5... (Read more)
- 220. J. Appl. Phys. 54, 179-183 (1983) , “The Mechanism of the Enhancement of Divacancy Production by Oxygen During Electron Irradiation of Silicon. II. Computer Modeling”, G. S. Oehrlein, I. Krafcsik, J. L. Lindström, A. E. Jaworowski, and J. W. CorbettNumerical tests of possible models for the oxygen dependence of the divacancy introduction rate in silicon electron irradiated at room temperature were performed on a computer. Only the model in which oxygen traps Si self-interstitials can reproduce all the experimental data. Our modeling results... (Read more)
- 221. Phys. Lett. A 99, 117 (1983) , “Low-Symmetry EPR Center in Hydrogen-Implanted Silicon”, Yu.V. Gorelkinskii, N.N. NevinnyiA new S = 1/2 EPR spectrum, labeled Si-AA2, arises from a negative-charge-state defect which has a low symmetry(C1). It is produced in crystalline silicon by hydrogen implantation at ≈20°C followed by annealing at ≈580°C and disappears completely at 700°C. The kinetics... (Read more)Si| EPR ion-implantation| 29Si AA2 C1 Hydrogen Si-H Vsi cluster(>3) p-type triclinic vacancy .inp files: Si/AA2/AA2.inp | last update: Takahide Umeda
- 222. Phys. Rev. Lett. 51, 423 (1983) , “Creation of Quasistable Lattice Defects by Electronic Excitation in SiO2”, Katsumi Tanimura, Takeshi Tanaka, and Noriaki ItohThe transient volume change of ?-quartz and fused silica induced by irradiation with an electron pulse has been measured above 80 K. It is shown that transient changes of volume and optical absorption due to the E1? centers (oxygen vacancies) decay in parallel and that the... (Read more)
- 223. Solid State Commun. 43, 41 (1982) , “The Neutral Divacancy in Silicon”, E. G. Sieverts, J. W. Corbett.Extended Hückel Theory calculations have been carried out on a cluster of silicon atoms to examine the relative stability of two configurations of the divacancy: (1) two vacancies on adjacent sites, i.e. the "normal" divacancy configuration; and (2) two vacancies separated by two... (Read more)
- 224. Sov. Phys. Solid State 23, 2126 (1981) , “Electron spin resonance of exchange-coupled vacancy pairs in hexagonal silicon carbide”, V. S. Va?ner, V. A. ll’in
- 225. J. Vac. Sci. Technol. 15, 1298-1310 (1978) , “Reactions of oxygen with ZnO–100-surfaces”, W. GöpelInvestigations are reported on the reaction of oxygen with electrostatic neutral ZnO100-surfaces studied by means of AES, LEED, EPR, thermal desorption spectroscopy, and isotopic exchange as well as changes in the surface conductivity and work function. Geometric and electronic structures of... (Read more)
- 226. Solid State Commun. 28, 221 (1978) , “On the Production of Paramagnetic Defects in Silicon by Electron Irradiation”, E. G. Sieverts, S. H. Muller and C. A. J. AmmerlaanMonocrystalline silicon samples of different impurity contents have been irradiated with 1.5 MeV electrons in order to produce divacancies in their negative charge state. In these samples different combinations of defects have been observed with electron paramagnetic resonance. The conditions for... (Read more)
- 227. Phys. Lett. A 60, 55 (1977) , “Oxygen-vibrational bands in irradiated silicon*1”, Y. H. Lee, J. C. Corelli, J. W. Corbett.A correlation is made between the EPR spectra and the IR absorption bands for the known multivacancy-oxygen complexes in irradiated silicon. (Read more)
- 228. Appl. Phys. Lett. 29, 265 (1976) , “EPR Evidence for a Positively Charged Vacancy-Oxygen Defect in Silicon”, Paul R. BrosiousA new EPR spectrum, labeled Si-I3, has been observed in electron-irradiated n-type Czochralski silicon illuminated with approximately band-gap light. The g-tensor symmetry, the g shifts from the free-electron value, and the temperature dependence of the spectrum amplitude lead to the... (Read more)
- 229. Phys. Rev. B 13, 2653 (1976) , “EPR Studies of Defects in Electron-Irradiated Silicon: A Triplet State of Vacancy-Oxygen Complexes”, Young-Hoon Lee and James W. CorbettThree new EPR spectra (Si-A 14, -A 15, and -A 16) and two previously known spectra (Si-P2 and -P4) are observed for the first time in electron-irradiated silicon. The microscopic defect models are established as multivacancy-oxygen complexes with the oxygen(s) in Si-O-Si structure inside the ... (Read more)
- 230. Phys. Rev. B 13, 2511 (1976) , “EPR of a Trapped Vacancy in Boron-Doped Silicon”, G. D. Watkins.An S=1/2 EPR spectrum, labeled Si-G10, is tentatively identified as a lattice vacancy trapped by substitutional boron in silicon. It is produced in boron-doped vacuum floating-zone silicon by 1.5-MeV-electron irradiation at 20.4 K followed by an anneal at ? 180 K, where the isolated vacancy... (Read more)
- 231. Z. Physik B 23, 171-181 (1976) , “Intrinsic Defects in Electron Irradiated Zinc Oxide”, B. Schallenberge, A. Hausmann
- 232. Lattice Defects in Semiconductors 23, 1-22 (1975) , Institute of Physics, London , “EPR Studies of the Lattice Vacancy and Low-Temperature Damage Processes in Silocon”, G. D. Watkins.EPR studies of silicon irradiated at 20.4 K and 4.2 K by 1.5 MeV and 46 MeV electrons are described. In 46 MeV irradiations the dominant defects formed appear to be divavancies and other multiple defect aggregates which liberate vacancies throughout the anneal to room temperature as they reorder, recombine, etc. For 1.5 MeV irradiations group III atoms play a vital role in p- and n-type materials in trapping interstitials and stabilizing damage. Carbon and oxygen are not effective interstitial traps at these temperatures. Evidence of limited vacancy migration during irradiation is also cited. Two distinct excited configurations of vacancy-oxygen pairs are identified as precursors to A-centre formation in n-type silicon. The kinetics for their conversion to A-centres depends strongly upon the Fermi level as does the isolated vacancy migration energy whhich is measured to be 0.18 ± 0.02 eV for the Vï¼ charge state. The vacancy has four charge states, V+, V0, Vï¼ and Vï¼. Kinetics for hole release from V+ reveals an activation barrier of 0.057 eV. The concentration of V+ at 20.4 K in boron-doped material indicates the corresponding donor level even closer to the band edge, approximately EV + 0.039 eV. Jahn-Teller energies for V0, V+, and Vï¼ are estimated from stress-alignment studies and confirmed to be large. Kinetics studies for reorientation from one Jahn-Teller distortion to another are also described for each charge state.
- 233. Phys. Rev. B 12, 4383 (1975) , “Defects in Irradiated Silicon: EPR of the Tin-Vacancy Pair”, G. D. Watkins.An EPR spectrum, labeled Si-G29, is identified as a lattice vacancy trapped by substitutional tin. The resulting tin-vacancy pair is observed in its neutral ground state with S=1. Studies versus wavelength of illumination indicate that it has a donor level at ?Ev+0.35 eV. Analysis of the... (Read more)
- 234. Solid State Commun. 16, 171 (1975) , “On the Role of Defect Charge State in the Stability of Point Defects in Silicon”, L. C. Kimerling, H. M. DeAngelis, J. W. Diebold.Defect annealing in 1-MeV electron-irradiated, phosphorus-doped silicon is studied. Charge state effects are explored directly using a p-n junction structure. A defect state which is associated with the E center (phosphorus-vacancy pair) is found to disappear at approximately 150°C with an... (Read more)
- 235. Phys. Rev. B 9, 4351-4361 (1974) , “EPR study of defects in neutron-irradiated silicon: Quenched-in alignment under <110>-uniaxial stress”, Young-Hoon Lee and James W. CorbettThe stress effect in an EPR study is first treated rigorously in terms of the piezospectroscopic tensor, taking account of the local symmetry of a defect. It is found that the degree of alignment (n?/n?) provides incisive information on the structure of a defect; in general, a... (Read more)
- 236. Solid State Commun. 14, 953-956 (1974) , “Temperature dependence of the ESR spectrum of the zinc vacancy in ZnO”, D. Galland and A. HerveThe temperature dependence of the spectrum of two trapped hole centers introduced by electron irradiation in ZnO is described. The results firmly establish the identification of these centers as being two slightly inequivalent configurations of the zinc vacancy in its negative charge state. (Read more)
- 237. Phys. Rev. B 8, 2810 (1973) , “EPR Studies in Neutron-Irradiated Silicon: A Negative Charge State of a Nonplanar Five-Vacancy Cluster (V5-)”, Y. H. Lee, J. W. Corbett.EPR studies are carried out for the float-zone intrinsic silicon irradiated with reactor neutrons up to the total fluence 1018 n/cm2. Details of the Si29 hyperfine structure and of the g tensor in the P-1 spectrum are observed with respect to temperature from 77 to... (Read more)Si| EPR neutron-irradiation| 29Si P1 Silicon cluster(>3) vacancy .inp files: Si/V5- | last update: Takahide Umeda
- 238. J. Appl. Phys. 43, 3499-3506 (1972) , “Electron Paramagnetic Resonance of the lattice Damage in Oxygen-Implanted Silicon”, K.L. Brower and Wendland BeezholdThe nature of the lattice damage produced at room temperature in ion-implanted intrinsic and n-type silicon has been studied as a function of 160-keV O+ ion fluence using electron paramagnetic resonance (EPR). The known EPR spectra observed were the negative divacancy (Si-G7), the... (Read more)Si| EPR ion-implantation neutron-irradiation| 31P D G7 Oxygen P3 Phosphorus S1 S2 SL2 Silicon amorphous vacancy .inp files: Si/SL2 | last update: Takahide Umeda
- 239. Phys. Rev. B 5, 4274 (1972) , “17O Hyperfine Structure of the Neutral (S=1) Vacancy-Oxygen Center in Ion-Implanted Silicon”, K. L. Brower.The intensity of the 17O hyperfine spectrum associated with the 28Si-17O-28Si isotopic configuration of the vacancy-oxygen (Si-S1) center was enhanced by ion implantation of 17O into silicon. The Si-S1 17O hyperfine spectrum was... (Read more)Si| EPR ion-implantation| 17O Oxygen SL1 pair(=2) vacancy .inp files: Si/V-O* | last update: Takahide Umeda
- 240. Phys. Rev. B 5, 3988 (1972) , “Electron-Paramagnetic-Resonance Detection of Optically Induced Divacancy Alignment in Silicon”, C. A. J. Ammerlaan, G. D. Watkins.An EPR study was made of the divacancy in silicon, produced by 1.5-MeV electron irradiation at room temperature, under illumination with polarized light. A light-induced alignment of divacancies among the various Jahn-Teller distortion directions in the lattice is observed for the singly positively... (Read more)
- 241. Radiat. Eff. 15, 77 (1972) , “New EPR Spectra in Neutron-Irradiated Silicon”, Y. H. Lee, Y. M. Kim, J. W. Corbett.Six new EPR spectra are reported which are apparently due to intrinsic defects created in the neutron-irradiation and, in some cases, annealing of silicon. In addition a spectrum similar to, but distinct from, that due to the vacancy-phosphorus center is reported. Some tentative defect models are discussed to emphasize the features of the spectra, but more detailed studies are required to establish the identity of the giving rise to these spectra.
- 242. Phys. Rev. B 4, 1968 (1971) , “Electron Paramagnetic Resonance of the Neutral (S=1) One-Vacancy-Oxygen Center in Irradiated Silicon”, K. L. Brower.A new EPR spectrum, labeled Si-S1, has been observed in electron- or neutron-irradiated, n- or p-type, crucible-grown silicon under illumination with approximately band-gap light. The Si-S1 spectrum consists primarily of a fine-structure spectrum and a 29Si hyperfine spectrum. By... (Read more)
- 243. Phys. Lett. A 33, 1-2 (1970) , “ESR spectra of the zinc vacancy in ZnO”, D. Galland and A. HerveElectron irradiated ZnO single crystals show anisotropic ESR spectra corresponding to a spin and a spin 1 hole centers. Tehy are respectively identified as the negative and the neutral charge states of the zinc vacancy. (Read more)
- 244. Solid State Commun. 8, 1359-1361 (1970) , “Electron paramagnetic resonance associated with Zn vacancies in neutron-irradiated ZnO”, A. L. Taylor, G. Filipovich and G. K. LindebergLines in the EPR spectrum of ZnO crystals irradiated by 3.6 × 1018cm−2 fast neutrons are ascribed to holes on oxygen atoms in the basal plane of O4 tetrahedra which surround Zn vacancies. (Read more)
- 245. Phys. Rev. 174, 881 (1968) , “Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Arsenic- and Antimony-Vacancy Pairs”, Edward L. Elkin and G. D. WatkinsTwo EPR spectra are observed in irradiated silicon (designated Si-G23 and Si-G24) which are identified with the neutral charge states of a lattice vacancy adjacent to a substitutional arsenic or antimony atom, respectively. EPR and ENDOR studies reveal a high degree of similarity between these... (Read more)
- 246. Phys. Rev. 155, 802 (1967) , “Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Aluminum-Vacancy Pair”, G. D. Watkins.An EPR spectrum produced in aluminum-doped silicon by 1.5-MeV electron irradiation is described. Labeled Si G9, it is identified as arising from an aluminum-vacancy pair, presumably formed when a mobile lattice vacancy is trapped by substitutional aluminum. The resonance is observed only upon... (Read more)
- 247. Phys. Rev. 138, A555 (1965) , “Production of Divacancies and Vacancies by Electron Irradiation of Silicon”, J. W. Corbett and G. D. WatkinsA study is described of the dependence of the room-temperature production of divacancies and vacancies in silicon upon the energy of the bombarding electrons over the range 0.7-56 MeV. For the divacancy, the Si-G6 electron-paramagnetic-resonance spectrum associated with the singly positively charged... (Read more)
- 248. Phys. Rev. 138, A543 (1965) , “Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the Divacancy”, G. D. Watkins and J. W. CorbettTwo electron paramagnetic resonance spectra produced in silicon by 1.5-MeV electron irradiation are described. Labeled Si-G6 and Si-G7, they are identified as arising from the singly positive and singly negative charged states of the divacancy, respectively. The observed hyperfine interactions with... (Read more)
- 249. Radiation Damage in Semiconductors 97-113 (1965) , Dunod, Paris , “A Review of EPR Studies in Irradiated Silicon”, G. D. Watkins.1. INTRODUCTION (p.97): 2. THE EPR EXPERIMENT (p.97): 3. RESULTS (p.99): A. The lattice Vacancy (p.99), B. Vacancies Trapped by Other Defects (p.102), C. Vacancy Motion (p.103), D. Interstitial Defects (p.103), E. Other Spectra (p.105), 4. SUMMARY AND CONCLUSION (p.110): 5.ACKNOWLEDGMENTS (p.110):
- 250. Phys. Rev. 135, A1381-A1385 (1964) , “New Oxygen Infrared Bands in Annealed Irradiated Silicon”, J. W. Corbett, G. D. Watkins, and R. S. McDonaldInfrared and electron-spin-resonance measurements on the recovery of silicon irradiated with 1.5-MeV electrons are presented. In the infrared measurements the disappearance of the previously reported 829-cm-1 (12?) oxygen vibration band is followed, and the appearance and subsequent... (Read more)
- 251. Phys. Rev. 134, A1359 (1964) , “Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-E Center”, G. D. Watkins, J. W. Corbett.The Si-E center is one of the dominant defects produced by electron irradiation in phosphorus-doped vacuum floating zone silicon. It introduces an acceptor level at ?(Ec-0.4) eV and gives rise to an electron paramagnetic resonance when this level does not contain an electron. As a result... (Read more)
- 252. J. Phys. Soc. Jpn. sppl. II, 18, 22 (1963) , “An EPR Study of the Lattice Vacancy in Silicon”, G. D. Watkins.An EPR spectrum is observed in silicon which is identified as arising from the isolated lattice vacancy. It is observed in p-type silicon which has been irradiated in situ at~40ºK by 1.5 Mev electrons. A simple molecular orbital treatment of the vacancy is outlined which describes many of the features of the spectrum and predicts the observed anisotrophy as resulting from a Jahn-Teller distortion. Studies of the disappearance of the vacancy vs anneal are described and interpreted in terms of long range migration of the vacancy and subsequent trapping by other defects. The activation energy for vacancy motion is determined to be 0.33±.03 ev in p-type material. Further study is required in n-type silicon before an unambiguous interpretation of the emergence of vacancy-impurity pairs can be made.
- 253. Phys. Rev. 132, 648 (1963) , “Spin-1 Centers in Neutron-Irradiated Silicon”, Wun Jung and G. S. NewellElectron paramagnetic resonance was used to study a number of fast-neutron-induced defects formed in pile-irradiated silicon and to follow their concentrations as a function of annealing. Measurements were made at 300, 77, and 4.2°K on samples which had attained intrinsic resistivity during... (Read more)
- 254. Phys. Rev. 121, 1001 (1961) , “Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-A Center”, G. D. Watkins, J. W. Corbett.The Si-A center is a major, radiation-damage defect produced in "pulled" silicon by a room temperature irradiation. As a result of studies described in this paper (I), and the following one (II), it is concluded that this center is a lattice vacancy with an oxygen atom impurity bridging two of the... (Read more)
- 255. Phys. Rev. Lett. 7, 314 (1961) , “Silicon Divacancy and Its Direct Production by Electron Irradiation”, J. W. Corbett and G. D. WatkinsTo date two defects produced in radiation damage of silicon hava been identified.These defects are a vacancy-oxygeon pair and a vacancy-phosphorous pair. They were identified largely by their associated electron spin resonance spectra and have been labeled the Si-A and Si-E... (Read more)Si| EPR electron-irradiation| G6 Silicon pair(=2) vacancy .inp files: Si/V2+ | last update: Takashi Fukushima
- 256. J. Appl. Phys. 30, 1195 (1959) , “Paramagnetic Resonance in Electron Irradiated Silicon”, G. Bemski.Electron spin resonance has been observed in n-type silicon irradiated with 0.5-Mev electrons. The particular resonance lines discussed here appear only in pulled crystals which contain about 1018 oxygen atoms per cm3. The lines do not appear in floating zone crystals... (Read more)Si| EPR electron-irradiation| A Oxygen Silicon pair(=2) vacancy .inp files: Si/V-O | last update: Takahide Umeda
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