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- 1. Appl. Phys. Lett. 93, 113504 (2008) , “Voltage polarity dependent low-power and high-speed resistance switching in CoO resistance random access memory with Ta electrode”, Hisashi Shima, Fumiyoshi Takano, Hidenobu Muramatsu, Hiro Akinaga, Yukio Tamai, Isao H. Inque, and Hidenori Takagi,Structural and resistance switching properties were investigated in the CoO resistance random access memory (RRAM) with the Ta electrode. The intermediate layer consisting of Co and Ta oxides was confirmed at the interface by the transmission electron microscopy and electron energy loss... (Read more)
- 2. Appl. Phys. Lett. 90, 023112 (2007) , “Electrically tunable defects in metallic single-walled carbon nanotubes”, Ji-Yong ParkA defect whose electron transmission probability can be controlled by electric field is intentionally created on a metallic single-walled carbon nanotube (SWCNT) with a voltage pulse from a tip of an atomic force microscope (AFM). Localized characteristics of the created defect are elucidated with... (Read more)
- 3. Appl. Phys. Lett. 90, 013104 (2007) , “Scanning tunneling microscopy investigations of hydrogen plasma-induced electron scattering centers on single-walled carbon nanotubes”, G. Buchs, P. Ruffieux, P. Gröning, and O. GröningThe authors report on the generation of localized defects on single-walled carbon nanotubes by means of a hydrogen electron cyclotron resonance plasma. The defects have been investigated using scanning tunneling microscopy (STM) and show an apparent topographic height in the STM of 1–3 ... (Read more)
- 4. J. Appl. Phys. 102, 013530 (2007) , “Fluorine-vacancy complexes in Si-SiGe-Si structures”, D. A. Abdulmalik, P. G. Coleman, H. A. W. El Mubarek, and P. AshburnFluorine-vacancy (FV) complexes have been directly observed in the Si0.94Ge0.06 layer in a Si-SiGe-Si structure, using variable-energy positron annihilation spectroscopy (VEPAS). These complexes are linked to the significant reduction of boron diffusion in the SiGe layer via... (Read more)
- 5. J. Appl. Phys. 101, 024324 (2007) , “Electron paramagnetic resonance in transition metal-doped ZnO nanowires”, A. O. Ankiewicz, M. C. Carmo, N. A. Sobolev, W. Gehlhoff, E. M. Kaidashev, A. Rahm, M. Lorenz, and M. GrundmannThe wide-band-gap zinc oxide-based diluted magnetic semiconductors currently attract considerable attention due to their possible use in spintronic devices. In this work, we studied ZnO nanowire samples synthesized on 10×10 mm2 a-plane sapphire substrates by high-pressure... (Read more)
- 6. Phys. Rev. B 75, 193409 (2007) , “Magnetic properties of vacancies in a graphitic boron nitride sheet by first-principles pseudopotential calculations”, M. S. Si and D. S. XueWe use ab initio methods to calculate the magnetic properties of vacancies in a graphitic boron nitride sheet (g-BN). By applying a full spin-polarized description to the system, we demonstrate that the nitrogen vacancy (VN) or the boron vacancy (VB)... (Read more)
- 7. Phys. Rev. B 75, 144103 (2007) , “Multiscale modeling of point defects in Si-Ge(001) quantum wells”, B. Yang and V. K. TewaryA computationally efficient hybrid Green's function (GF) technique is developed for multiscale modeling of point defects in a trilayer lattice system that links seamlessly the length scales from lattice (subnanometers) to continuum (bulk). The model accounts for the discrete structure of the lattice... (Read more)
- 8. Phys. Rev. B 75, 115113 (2007) , “Structural, electronic, and magnetic properties of Mn-doped Ge nanowires by ab initio calculations”, J. T. Arantes, Antônio J. R. da Silva, and A. FazzioUsing ab initio total energy density-functional theory calculations, we investigated the electronic, structural, and magnetic properties of manganese-doped germanium nanowires. The nanowires have been constructed along the [110] direction and the dangling bonds on the surface have been... (Read more)
- 9. Phys. Rev. B 75, 113401 (2007) , “Enhancing the topological structures of defected carbon nanotubes with adsorbed hydrocarbon radicals at low temperatures”, R. L. Zhou, H. Y. He, and B. C. PanRealistic carbon nanotubes (CNTs) contain various structural defects by which the physical and chemical properties of the CNTs are significantly influenced. So, lowering the defect densities is of importance for the potential application of the CNTs. By performing tight-binding molecular dynamics... (Read more)
- 10. Phys. Rev. B 75, 113310 (2007) , “Hole spin polarization in GaAs:Mn/AlAs multiple quantum wells”, V. F. Sapega, O. Brandt, M. Ramsteiner, K. H. Ploog, I. E. Panaiotti, and N. S. AverkievWe study the effect of confinement on the spin polarization of holes bound to Mn acceptors in paramagnetic GaAs:Mn/AlAs multiple quantum wells. It is demonstrated that the polarization of these bound holes is governed by the properties of the host material rather than by quantum confinement. The... (Read more)
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