Papers - tagged 'nanostructure' - Defect dat@base
http://esrlab.jp/div-media/defect/index.php?q=&material=&method=&defect=nanostructure&sb=u
Papers - Defect dat@base2009-10-28T19:06:39+09:00Nonvolatile Memory with Multilevel Switching: A Basic Model
http://dx.doi.org/10.1103/PhysRevLett.92.178302
M. J. Rozenberg, I. H. Inoue, and M. J. Sánchez, Phys .Rev. Lett. 92, 178302 (2004) 2009-10-28T19:06:39+09:00Voltage polarity dependent low-power and high-speed resistance switching in CoO resistance random access memory with Ta electrode
http://dx.doi.org/10.1063/1.2982426
Hisashi Shima, Fumiyoshi Takano, Hidenobu Muramatsu, Hiro Akinaga, Yukio Tamai, Isao H. Inque, and Hidenori Takagi,, Appl. Phys. Lett. 93, 113504 (2008) 2009-10-28T18:59:52+09:00Fluorine-vacancy complexes in Si-SiGe-Si structures
http://dx.doi.org/10.1063/1.2753573
D. A. Abdulmalik, P. G. Coleman, H. A. W. El Mubarek, and P. Ashburn, J. Appl. Phys. 102, 013530 (2007) 2007-11-05T19:58:22+09:00Radioactive Decay Speedup at T=5 K: Electron-Capture Decay Rate of 7Be Encapsulated in C60
http://dx.doi.org/10.1103/PhysRevLett.98.252501
T. Ohtsuki, K. Ohno, T. Morisato, T. Mitsugashira, K. Hirose, H. Yuki, and J. Kasagi, Phys. Rev. Lett. 98, 252501 (2007) 2007-07-17T21:42:24+09:00Enhanced Ductile Behavior of Tensile-Elongated Individual Double-Walled and Triple-Walled Carbon Nanotubes at High Temperatures
http://dx.doi.org/10.1103/PhysRevLett.98.185501
J. Y. Huang, S. Chen, Z. F. Ren, Z. Wang, K. Kempa, M. J. Naughton, G. Chen, and M. S. Dresselhaus, Phys. Rev. Lett. 98, 185501 (2007) 2007-07-17T12:48:31+09:00Structural, electronic, and magnetic properties of Mn-doped Ge nanowires by ab initio calculations
http://dx.doi.org/10.1103/PhysRevB.75.115113
J. T. Arantes, Antônio J. R. da Silva, and A. Fazzio, Phys. Rev. B 75, 115113 (2007) 2007-07-13T00:42:49+09:00Enhancing the topological structures of defected carbon nanotubes with adsorbed hydrocarbon radicals at low temperatures
http://dx.doi.org/10.1103/PhysRevB.75.113401
R. L. Zhou, H. Y. He, and B. C. Pan, Phys. Rev. B 75, 113401 (2007) 2007-07-13T00:37:52+09:00Hole spin polarization in GaAs:Mn/AlAs multiple quantum wells
http://dx.doi.org/10.1103/PhysRevB.75.113310
V. F. Sapega, O. Brandt, M. Ramsteiner, K. H. Ploog, I. E. Panaiotti, and N. S. Averkiev, Phys. Rev. B 75, 113310 (2007) 2007-07-13T00:36:12+09:00Energetics, structure, and long-range interaction of vacancy-type defects in carbon nanotubes: Atomistic simulations
http://dx.doi.org/10.1103/PhysRevB.74.245420
J. Kotakoski, A. V. Krasheninnikov,, and K. Nordlund, Phys. Rev. B 74, 245420 (2006) 2007-07-10T12:02:00+09:00Vacancy defects and the formation of local haeckelite structures in graphene from tight-binding molecular dynamics
http://dx.doi.org/10.1103/PhysRevB.74.245411
Gun-Do Lee, C. Z. Wang, Euijoon Yoon, Nong-Moon Hwang, and K. M. Ho, Phys. Rev. B 74, 245411 (2006) 2007-07-10T12:00:36+09:00Room Temperature Electrical Detection of Spin Coherence in C60
http://dx.doi.org/10.1103/PhysRevLett.98.216601
W. Harneit, C. Boehme, S. Schaefer, K. Huebener, K. Fostiropoulos, and K. Lips, Phys. Rev. Lett. 98, 216601 (2007) 2007-06-29T16:55:14+09:00Nature of the Bound States of Molecular Hydrogen in Carbon Nanohorns
http://dx.doi.org/10.1103/PhysRevLett.98.215503
F. Fernandez-Alonso, F. J. Bermejo, C. Cabrillo, R. O. Loutfy, V. Leon, and M. L. Saboungi, Phys. Rev. Lett. 98, 215503 (2007) 2007-06-29T16:48:45+09:00Efficient Dynamic Nuclear Polarization at High Magnetic Fields
http://dx.doi.org/10.1103/PhysRevLett.98.220501
Gavin W. Morley, Johan van Tol, Arzhang Ardavan, Kyriakos Porfyrakis, Jinying Zhang, and G. Andrew D. Briggs, Phys. Rev. Lett. 98, 220501 (2007) 2007-06-29T10:26:44+09:00Optical study of excitation and deexcitation of Tm in GaN quantum dots
http://dx.doi.org/10.1103/PhysRevB.74.155310
Thomas Andreev, Nguyen Quang Liem, Yuji Hori, Mitsuhiro Tanaka, Osamu Oda, Daniel Le Si Dang, Bruno Daudin, and Bruno Gayral, Phys. Rev. B 74, 155310 (2006) 2007-06-28T15:34:01+09:00Doping and the unique role of vacancies in promoting the magnetic ground state in carbon nanotubes and C60 polymers
http://dx.doi.org/10.1103/PhysRevB.74.153403
Antonis N. Andriotis, R. Michael Sheetz, and Madhu Menon, Phys. Rev. B 74, 153403 (2006) 2007-06-28T14:58:52+09:00Electron transport in laterally confined phosphorus δ layers in silicon
http://dx.doi.org/10.1103/PhysRevB.74.153311
S. J. Robinson, J. S. Kline, H. J. Wheelwright, J. R. Tucker, C. L. Yang, R. R. Du, B. E. Volland, I. W. Rangelow, and T.-C. Shen, Phys. Rev. B 74, 153311 (2006) 2007-06-28T14:56:11+09:00Magnetic properties of vacancies in a graphitic boron nitride sheet by first-principles pseudopotential calculations
http://dx.doi.org/10.1103/PhysRevB.75.193409
M. S. Si and D. S. Xue, Phys. Rev. B 75, 193409 (2007) 2007-06-27T20:27:23+09:00Multiscale modeling of point defects in Si-Ge(001) quantum wells
http://dx.doi.org/10.1103/PhysRevB.75.144103
B. Yang and V. K. Tewary, Phys. Rev. B 75, 144103 (2007) 2007-06-27T20:07:36+09:00Pseudoclimb and Dislocation Dynamics in Superplastic Nanotubes
http://dx.doi.org/10.1103/PhysRevLett.98.075503
Feng Ding, Kun Jiao, Mingqi Wu, and Boris I. Yakobson, Phys. Rev. Lett. 98, 075503 (2007) 2007-06-25T14:55:13+09:00Ab initio study of hydrogen interaction with pure and nitrogen-doped carbon nanotubes
http://dx.doi.org/10.1103/PhysRevB.75.075420
Zhiyong Zhang and Kyeongjae Cho, Phys. Rev. B 75, 075420 (2007) 2007-06-18T12:14:18+09:00Microcrack-induced strain relief in GaN/AlN quantum dots grown on Si(111)
http://dx.doi.org/10.1103/PhysRevB.75.075306
G. Sarusi, O. Moshe, S. Khatsevich, D. H. Rich, and B. Damilano, Phys. Rev. B 75, 075306 (2007) 2007-06-18T12:04:27+09:00Ab initio theoretical study of hydrogen and its interaction with boron acceptors and nitrogen donors in single-wall silicon carbide nanotubes
http://dx.doi.org/10.1103/PhysRevB.75.085416
A. Gali, Phys. Rev. B 75, 085416 (2007) 2007-06-18T11:35:38+09:00Spin relaxation in a germanium nanowire
http://dx.doi.org/10.1063/1.2230012
S. Patibandla, S. Pramanik, S. Bandyopadhyay, and G. C. Tepper, J. Appl. Phys. 100, 044303 (2006) 2007-04-05T14:57:07+09:00Magnetic resonance study of Ni nanoparticles in single-walled carbon nanotube bundles
http://dx.doi.org/10.1063/1.2405122
A. A. Konchits, F. V. Motsnyi, Yu. N. Petrov, S. P. Kolesnik, V. S. Yefanov, M. L. Terranova, E. Tamburri, S. Orlanducci, V. Sessa, and M. Rossi, J. Appl. Phys. 100, 124315 (2006) 2007-04-05T14:55:58+09:00Midgap luminescence centers in single-wall carbon nanotubes created by ultraviolet illumination
http://dx.doi.org/10.1063/1.2364157
Konstantin Iakoubovskii, Nobutsugu Minami, Yeji Kim, Kanae Miyashita, Said Kazaoui, and Balakrishnan Nalini, Appl. Phys. Lett. 89, 173108 (2006) 2007-04-05T14:48:41+09:00Random telegraph signals and noise behaviors in carbon nanotube transistors
http://dx.doi.org/10.1063/1.2402224
Fei Liu, Kang L. Wang, Daihua Zhang, and Chongwu Zhou, Appl. Phys. Lett. 89, 243101 (2006) 2007-04-05T14:46:39+09:00Scanning tunneling microscopy investigations of hydrogen plasma-induced electron scattering centers on single-walled carbon nanotubes
http://dx.doi.org/10.1063/1.2428594
G. Buchs, P. Ruffieux, P. Gröning, and O. Gröning, Appl. Phys. Lett. 90, 013104 (2007) 2007-04-05T14:45:30+09:00Electrically tunable defects in metallic single-walled carbon nanotubes
http://dx.doi.org/10.1063/1.2430921
Ji-Yong Park, Appl. Phys. Lett. 90, 023112 (2007) 2007-02-22T13:56:20+09:00Electron paramagnetic resonance in transition metal-doped ZnO nanowires
http://dx.doi.org/10.1063/1.2402095
A. O. Ankiewicz, M. C. Carmo, N. A. Sobolev, W. Gehlhoff, E. M. Kaidashev, A. Rahm, M. Lorenz, and M. Grundmann, J. Appl. Phys. 101, 024324 (2007) 2007-02-22T13:47:09+09:00Surface Dangling-Bond States and Band Lineups in Hydrogen-Terminated Si, Ge, and Ge/Si Nanowires
http://dx.doi.org/10.1103/PhysRevLett.98.026801
R. Kagimura, R. W. Nunes, and H. Chacham, Phys. Rev. Lett. 98, 026801 (2007) 2007-02-15T13:53:30+09:00Doping and defects in the formation of single-crystal ZnO nanodisks
http://dx.doi.org/10.1063/1.2422899
Junjie Qi, Yue Zhang, Yunhua Huang, Qingliang Liao, and Juan Liu, Appl. Phys. Lett. 89, 252115 (2006) 2006-12-28T12:05:15+09:00Electrically detected magnetic resonance in ion-implanted Si:P nanostructures
http://dx.doi.org/10.1063/1.2358928
D. R. McCamey, H. Huebl, M. S. Brandt, W. D. Hutchison, J. C. McCallum, R. G. Clark, and A. R. Hamilton, Appl. Phys. Lett. 89, 182115 (2006) 2006-12-14T17:41:05+09:00Ab initio study of native defects in SiC nanotubes
http://dx.doi.org/10.1103/PhysRevB.74.155425
R. J. Baierle, P. Piquini, L. P. Neves, and R. H. Miwa, Phys. Rev. B 74, 155425 (2006) 2006-12-07T14:46:09+09:00Critical size for defects in nanostructured materials
http://dx.doi.org/10.1063/1.2220472
Jagdish Narayan, J. Appl. Phys. 100, 034309 (2006) 2006-11-20T14:58:55+09:00Combined optical and electrical studies of the effects of annealing on the intrinsic states and deep levels in a self-assembled InAs quantum-dot structure
http://dx.doi.org/10.1063/1.2234817
S. W. Lin, A. M. Song, N. Rigopolis, B. Hamilton, A. R. Peaker, and M. Missous, J. Appl. Phys. 100, 043703 (2006) 2006-11-16T13:05:37+09:00Spin-dependent transport in diluted-magnetic-semiconductor/semiconductor quantum wires
http://dx.doi.org/10.1063/1.2219336
Wen Xu and Yong Guo, J. Appl. Phys. 100, 033901 (2006) 2006-11-16T12:39:16+09:00Size and shape effects on excitons and biexcitons in single InAs/InP quantum dots
http://dx.doi.org/10.1063/1.2353896
N. Chauvin, B. Salem, G. Bremond, G. Guillot, C. Bru-Chevallier, and M. Gendry, J. Appl. Phys. 100, 073702 (2006) 2006-11-09T17:55:42+09:00Exciton fine structure and biexciton binding energy in single self-assembled InAs/AlAs quantum dots
http://dx.doi.org/10.1063/1.2209089
D. Sarkar, H. P. van der Meulen, J. M. Calleja, J. M. Becker, R. J. Haug, and K. Pierz, J. Appl. Phys. 100, 023109 (2006) 2006-11-09T15:32:15+09:00Computation of the Stark effect in P impurity states in silicon
http://dx.doi.org/10.1103/PhysRevB.74.035202
A. Debernardi, A. Baldereschi, and M. Fanciulli, Phys. Rev. B 74, 035202 (2006) 2006-10-21T01:57:49+09:00Ab initio study of nitrogen and boron substitutional impurities in single-wall SiC nanotubes
http://dx.doi.org/10.1103/PhysRevB.73.245415
A. Gali, Phys. Rev. B 73, 245415 (2006) 2006-08-24T13:54:14+09:00