Papers - tagged 'interstitial' - Defect dat@base
http://esrlab.jp/div-media/defect/index.php?q=&material=&method=&defect=interstitial&sb=u
Papers - Defect dat@base2010-01-25T16:24:22+09:00Fluorine in Si: Native-defect complexes and the supression of impurity diffusion
http://dx.doi.org/10.1103/PhysRevB.72.045219
Giorgia M. Lopez, Vincenzo Fiorentini, Giuliana Impellizzeri, Salvatore Mirabella, Enrico Napolitani, Phys. Rev. B 72, 045219 (2005) 2010-01-25T16:24:22+09:00Ab Initio Calculations to Model Anomalous Fluorine Behavior
http://dx.doi.org/10.1103/PhysRevLett.93.245901
Milan Diebel, Scott T. Dunham, Phys. Rev. Lett. 93, 245901 (2004) 2010-01-18T16:53:05+09:00Fluorine in Silicon: Diffusion, Trapping, and Precipitation
http://dx.doi.org/10.1103/PhysRevLett.90.155901
X. D. Pi, C. P. Burrows, P. G. Coleman, Phys. Rev. Lett. 90, 155901 (2003) 2010-01-18T16:38:27+09:00Electron paramagnetic resonance of hydrogen in silicon
http://dx.doi.org/10.1016/0921-4526(91)90119-Y
Yu.V. Gorelkinskii, N.N. Nevinnyi, Physica B 170, 155-167 (1991) 2010-01-18T14:59:37+09:00EPR Observation of the Isolated Interstitial Carbon Atom in Silicon
http://dx.doi.org/10.1103/PhysRevLett.36.1329
G. D. Watkins and K. L. Brower, Phys. Rev. Lett. 36, 1329 (1976) 2009-11-26T12:06:27+09:00EPR of a Jahn-Teller distorted (111) carbon interstitialcy in irradiated silicon
http://dx.doi.org/10.1103/PhysRevB.9.2607
K. L. Brower., Phys. Rev. B 9, 2607 (1974) 2009-11-26T12:05:46+09:00Bistable interstitial-carbonsubstitutional-carbon pair in silicon
http://dx.doi.org/10.1103/PhysRevB.42.5765
L. W. Song, X. D. Zhan, B. W. Benson, and G. D. Watkins, Phys. Rev. B 42, 5765 (1990) 2009-11-26T11:37:01+09:00EPR Identification of the Single-Acceptor State of Interstitial Carbon in Silicon
http://dx.doi.org/10.1103/PhysRevB.42.5759
L. W. Song and G. D. Watkins, Phys. Rev. B 42, 5759 (1990) 2009-11-26T11:11:07+09:00EPR of a <001> Si interstitial complex in irradiated silicon
http://dx.doi.org/10.1103/PhysRevB.14.872
K. L. Brower., Phys. Rev. B 14, 872-883 (1976) 2009-11-26T10:59:49+09:00EPR Studies of the Lattice Vacancy and Low-Temperature Damage Processes in Silocon
http://esrlab.jp/div-media/defect/index.php?q=&material=&method=&defect=interstitial&sb=u&id=1912#1912
G. D. Watkins., Lattice Defects in Semiconductors 23, 1-22 (1975) , Institute of Physics, London2009-11-26T10:56:15+09:00EPR study of neutron-irradiated silicon: A positive charge state of the <100> split di-interstitial
http://dx.doi.org/10.1103/PhysRevB.14.4506
Young-Hoon Lee, Nikolai N. Gerasimenko, and James W. Corbett, Phys. Rev. B 14, 4506 (1976) 2009-11-26T10:39:48+09:00Electron paramagnetic resonance of multistable interstitial-carbonsubstitutional-group-V-atom pairs in silicon
http://dx.doi.org/10.1103/PhysRevB.47.6363
X. D. Zhan, G. D. Watkins, Phys. Rev. B 47, 6363-6380 (1993) 2009-11-19T11:55:56+09:00Self-Interstitials in Silicon Irradiated with Light Ions
http://dx.doi.org/10.1002/(SICI)1521-396X(199807)168:1<73::AID-PSSA73>3.0.CO;2-5
B. N. Mukashev, Kh. A. Abdullin, Yu. V. Gorelkinskii., phys. stat. sol. (a) 168, 73 (1998) 2009-11-18T19:05:25+09:00Metastable oxygen - silicon interstitial complex in crystalline silicon
http://dx.doi.org/10.1088/0268-1242/11/11/010
Kh. A. Abdullin, B. N. Mukashev, Yu. V. Gorelkinskii., Semicond. Sci. Technol. 11, 1696-1703 (1996) 2009-11-18T19:01:57+09:00Self-Interstitial Related Reactions in Silicon Irradiated by Light Ions
http://dx.doi.org/10.1016/S0921-5107(98)00296-7
B. N. Mukashev, Kh. A. Abdullin, Yu. V. Gorelkinskii and S. Zh. Tokmoldin, Mater. Sci. Eng. B 58, 171-178 (1999) 2009-11-18T18:59:10+09:00New Oxygen-Related EPR Spectra in Proton-Irradiated Silicon
http://dx.doi.org/10.1016/0921-5107(95)01304-0
Kh. A. Abdullin, B. N. Mukashev, A. M. Makhov and Yu. V. Gorelkinskii, Mater. Sci. Eng. B 36, 77 (1996) 2009-11-18T18:54:57+09:00Low Symmetry Centre in Silicon
http://dx.doi.org/10.1002/pssa.2210920148
A. V. Dvurechenskii, V. V. Suprunchik., phys. stat. sol. (a) 92, K53 (1985) 2009-11-18T16:43:11+09:00Carbon-Induced Rapid Annihilation of Thermal Double Donors in Czochralski Silicon Studied by Infrared Absorption Spectroscopy
http://dx.doi.org/10.1143/JJAP.32.L1715
Yoichi Kamiura*1, Yutaka Uno*2 and Fumio Hashimoto , Jpn. J. Appl. Phys. 32, L1715 (1993) 2009-10-28T19:02:18+09:00New EPR Spectra in Irradiated Silicon
http://dx.doi.org/10.1063/1.1660106
D. F. Daly., J. Appl. Phys. 42, 864 (1971) 2009-10-21T16:30:35+09:00Transition Metals in Silicon
http://dx.doi.org/10.1007/BF00617708
E. R. Weber., Appl. Phys. A 30, 1 (1983) 2009-08-19T14:10:23+09:00Electron-nuclear double resonance of titanium in silicon: 47Ti and 49Ti ENDOR
http://dx.doi.org/10.1103/PhysRevB.37.7268
D. A. van Wezep, C. A. J. Ammerlaan, Phys. Rev. B 37, 7268 (1988) 2009-08-19T14:02:35+09:00Electron-Nuclear Double Resonance of Titanium in Silicon: 29Si ENDOR
http://dx.doi.org/10.1103/PhysRevB.32.7129
D. A. van Wezep, R. van Kemp, E. G. Sieverts, C. A. J. Ammerlaan., Phys. Rev. B 32, 7129 (1985) 2009-08-19T14:01:32+09:00EPR evidence of the self-interstitials in neutron-irradiated silicon*1
http://dx.doi.org/10.1016/0038-1098(74)90085-4
Y. H. Lee, J. W. Corbett., Solid State Commun. 15, 1781 (1974) 2008-11-10T10:58:51+09:00New EPR Spectra in Neutron-Irradiated Silicon
http://esrlab.jp/div-media/defect/index.php?q=&material=&method=&defect=interstitial&sb=u&id=1940#1940
Y. H. Lee, Y. M. Kim, J. W. Corbett., Radiat. Eff. 15, 77 (1972) 2008-09-29T12:54:57+09:00Creation and identification of the two spin states of dicarbon antisite defects in 4H-SiC
http://dx.doi.org/10.1103/PhysRevB.77.195203
J. W. Steeds, W. Sullivan, S. A. Furkert, G. A. Evans, P. J. Wellmann, Phys. Rev. B 77, 195203 (2008) 2008-05-22T00:02:20+09:00Identification of antisite carbon split-interstitial defects in 4H-SiC
http://dx.doi.org/10.1103/PhysRevB.77.195204
J. W. Steeds, W. Sullivan, Phys. Rev. B 77, 195204 (2008) 2008-05-22T00:01:06+09:00Electrical characterization of metastable carbon clusters in SiC: A theoretical study
http://dx.doi.org/10.1103/PhysRevB.73.033204
A. Gali, N. T. Son, E. Janzn, Phys. Rev. B 73, 033204 (2006) 2008-01-03T22:05:50+09:00Structure and vibrational spectra of carbon clusters in SiC
http://dx.doi.org/10.1103/PhysRevB.70.235211
Alexander Mattausch, Michel Bockstedte, and Oleg Pankratov, Phys. Rev. B 70, 235211 (2004) 2008-01-02T21:52:41+09:00Observation of fluorine-vacancy complexes in silicon
http://dx.doi.org/10.1063/1.1784045
P. J. Simpson, Z. Jenei, P. Asoka-Kumar, R. R. Robison, M. E. Law, Appl. Phys. Lett. 85, 1538 (2004) 2007-11-06T14:19:46+09:00Monovacancy and Interstitial Migration in Ion-Implanted Silicon
http://dx.doi.org/10.1103/PhysRevLett.98.265502
P. G. Coleman and C. P. Burrows, Phys. Rev. Lett. 98, 265502 (2007) 2007-07-17T21:59:16+09:00Density-Functional Theory Study of Half-Metallic Heterostructures: Interstitial Mn in Si
http://dx.doi.org/10.1103/PhysRevLett.98.117202
Hua Wu, Peter Kratzer, and Matthias Scheffler, Phys. Rev. Lett. 98, 117202 (2007) 2007-07-16T00:31:47+09:00Early stages of radiation damage in graphite and carbon nanostructures: A first-principles molecular dynamics study
http://dx.doi.org/10.1103/PhysRevB.75.115418
Oleg V. Yazyev, Ivano Tavernelli, Ursula Rothlisberger, and Lothar Helm, Phys. Rev. B 75, 115418 (2007) 2007-07-13T00:59:11+09:00Stability of I3 complexes in III-V compound semiconductors by tight-binding molecular dynamics
http://dx.doi.org/10.1103/PhysRevB.75.115205
G. Zollo and F. Gala, Phys. Rev. B 75, 115205 (2007) 2007-07-13T00:49:25+09:00Dynamics of positively charged muonium centers in indium nitride
http://dx.doi.org/10.1103/PhysRevB.74.245219
Y. G. Celebi, R. L. Lichti, B. E. Coss, and S. F. J. Cox, Phys. Rev. B 74, 245219 (2006) 2007-07-10T11:57:00+09:00Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave fluorescence
http://dx.doi.org/10.1103/PhysRevB.74.245205
V. Holý, Z. Matj, O. Pacherová, V. Novák, M. Cukr, K. Olejník, and T. Jungwirth, Phys. Rev. B 74, 245205 (2006) 2007-07-10T11:46:37+09:00Diffusion and conversion dynamics for neutral muonium in aluminum nitride
http://dx.doi.org/10.1103/PhysRevB.74.245203
H. N. Bani-Salameh, R. L. Lichti, Y. G. Celebi, and S. F. J. Cox, Phys. Rev. B 74, 245203 (2006) 2007-07-10T11:45:02+09:00Precursor mechanism for interaction of bulk interstitial atoms with Si(100)
http://dx.doi.org/10.1103/PhysRevB.74.235301
Xiao Zhang, Min Yu, Charlotte T. M. Kwok, Ramakrishnan Vaidyanathan, Richard D. Braatz, and Edmund G. Seebauer, Phys. Rev. B 74, 235301 (2006) 2007-07-09T22:33:22+09:00Comparison of two methods for circumventing the Coulomb divergence in supercell calculations for charged point defects
http://dx.doi.org/10.1103/PhysRevB.74.235209
A. F. Wright and N. A. Modine, Phys. Rev. B 74, 235209 (2006) 2007-07-09T22:29:37+09:00Theoretical study of the magnetism of Mn-doped ZnO with and without defects
http://dx.doi.org/10.1103/PhysRevB.74.235208
D. Iuan, B. Sanyal, and O. Eriksson, Phys. Rev. B 74, 235208 (2006) 2007-07-09T22:28:14+09:00Role of defects in ferromagnetism in Zn1−xCoxO: A hybrid density-functional study
http://dx.doi.org/10.1103/PhysRevB.74.144432
C. H. Patterson, Phys. Rev. B 74, 144432 (2006) 2007-07-03T08:53:06+09:00First-principles study of the intrinsic defects in PbFCl
http://dx.doi.org/10.1103/PhysRevB.74.174101
Bo Liu, Zeming Qi, and Chaoshu Shi, Phys. Rev. B 74, 174101 (2006) 2007-06-30T21:46:26+09:00Vibronic spectrum of c-BN measured with cathodoluminescence
http://dx.doi.org/10.1103/PhysRevB.74.155204
C. Manfredotti, R. Cossio, A. Lo Giudice, E. Vittone, and F. Fizzotti, Phys. Rev. B 74, 155204 (2006) 2007-06-28T15:29:29+09:00Interstitial-mediated mechanisms of As and P diffusion in Si: Gradient-corrected density-functional calculations
http://dx.doi.org/10.1103/PhysRevB.74.195202
Scott A. Harrison, Thomas F. Edgar, and Gyeong S. Hwang, Phys. Rev. B 74, 195202 (2006) 2007-06-28T10:24:41+09:00Computational and experimental imaging of Mn defects on GaAs (110) cross-sectional surfaces
http://dx.doi.org/10.1103/PhysRevB.75.195335
A. Stroppa, X. Duan, M. Peressi, D. Furlanetto, and S. Modesti, Phys. Rev. B 75, 195335 (2007) 2007-06-27T20:46:23+09:00Effect of Co and O defects on the magnetism in Co-doped ZnO: Experiment and theory
http://dx.doi.org/10.1103/PhysRevB.75.195215
G. S. Chang, E. Z. Kurmaev, D. W. Boukhvalov, L. D. Finkelstein, S. Colis, T. M. Pedersen, A. Moewes, and A. Dinia, Phys. Rev. B 75, 195215 (2007) 2007-06-27T20:41:25+09:00Mechanism and energetics of self-interstitial formation and diffusion in silicon
http://dx.doi.org/10.1103/PhysRevB.75.195209
Ramakrishnan Vaidyanathan, Michael Y. L. Jung, and Edmund G. Seebauer, Phys. Rev. B 75, 195209 (2007) 2007-06-27T20:38:00+09:00Hf defects in c-Si and their importance for the HfO2/Si interface: Density-functional calculations
http://dx.doi.org/10.1103/PhysRevB.75.193203
Wanderlã L. Scopel, Antônio J. R. da Silva, and A. Fazzio, Phys. Rev. B 75, 193203 (2007) 2007-06-27T20:24:01+09:00Compensating point defects in 4He+-irradiated InN
http://dx.doi.org/10.1103/PhysRevB.75.193201
F. Tuomisto, A. Pelli, K. M. Yu, W. Walukiewicz, and W. J. Schaff, Phys. Rev. B 75, 193201 (2007) 2007-06-27T20:20:20+09:00Exact linear response of reacting thermal defects driven by creation processes
http://dx.doi.org/10.1103/PhysRevB.75.134106
C. P. Flynn, Phys. Rev. B 75, 134106 (2007) 2007-06-27T20:00:00+09:00Self- and foreign-atom diffusion in semiconductor isotope heterostructures. II. Experimental results for silicon
http://dx.doi.org/10.1103/PhysRevB.75.035211
H. Bracht, H. H. Silvestri, I. D. Sharp, and E. E. Haller, Phys. Rev. B 75, 035211 (2007) 2007-06-25T19:06:56+09:00