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- 1. Jpn. J. Appl. Phys. 10, 52-62 (1971) , “Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I”, Y. NishiThree kinds of paramagnetic centers named PA, PB and PC have been found in a silicon-silicon dioxide structure at liquid nitrogen temperature. PA (g=∼2.000, ΔH=∼4 Oe), and PB having anisotropic g-value... (Read more)
- 2. J. Appl. Phys. 50, 5847-5854 (1979) , “ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafers”, P. J. Caplan, E. H. Poindexter, B. E. Deal, R. R. RazoukThe ESR Pb center has been observed in thermally oxidized single-crystal silicon wafers, and compared with oxide fixed charge Qss and oxidation-induced interface states Nst. The Pb center is found to be located... (Read more)
- 3. J. Appl. Phys. 52, 879-884 (1981) , “Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers”, E. H. Poindexter, P. J. Caplan, B. E. Deal, R. R. RazoukInterface states and electron spin resonance centers have been observed and compared in thermally oxidized (111) and (100) silicon wafers subjected to various processing treatments. The ESR Pb signal, previously assigned to interface ·SiSi3 defects on (111)... (Read more)
- 4. Appl. Phys. Lett. 41, 251-253 (1982) , “Defects and impurities in thermal oxides on silicon”, K. L. Brower, P. M. Lenahan, and P. V. DressendorferOxides grown at 1100 °C in dry oxygen for 60 min to a thickness of 1350 Å on silicon with and without subsequent forming gas anneals were 60Co irradiated at 4 K with doses up to 106 rad (Si). In situ electron paramagnetic... (Read more)
- 5. Appl. Phys. Lett. 41, 542-544 (1982) , “Effect of bias on radiation-induced paramagnetic defects at the silicon-silicon dioxide interface”, P. M. Lenahan and P. V. DressendorferElectron spin resonance measurements have been made on gamma-irradiated (111) Si/SiO2 structures as a function of bias across the oxide. We observe a large change in the density of radiation-induced paramagnetic Pb centers with bais. We conclude that... (Read more)
- 6. Appl. Phys. Lett. 43, 1111 (1983) , “29Si hyperfine structure of unpaired spins at the Si/SiO2 interface”, K. L. BrowerThe hyperfine spectrum associated with unpaired electrons at the (111) Si/SiO2 interface (Pb centers) is reported for the first time. Electron paramagnetic resonance measurements indicate that the hyperfine interaction S··I arises from the... (Read more)
- 7. Appl. Phys. Lett. 43, 563-565 (1983) , “Characteristic electronic defects at the Si-SiO2 interface”, N. M. Johnson, D. K. Biegelsen, M. D. Moyer, S. T. Chang, E. H. Poindexter, P. J. CaplanOn unannealed, thermally oxidized silicon, electron spin resonance reveals an oriented interface defect which is termed the Pb center and identified as the trivalent silicon defect. Deep level transient spectroscopy (DLTS) reveals two broad characteristic peaks in the... (Read more)
- 8. Surf. Sci. 141, 255-284 (1984) , “X AND K BAND ESR STUDY OF THE Pb INTERFACE CENTRES IN THERMALLY OXIDIZED p-TYPE (001)Si WAFERS AT LOW TEMPERATURES AND INFLUENCE OF MEDIUM-DOSE As+ ION IMPLANTATION”, A. Stesmans, J. Braet, J. Witters, R. F. DekeersmaeckerElectron spin resonance (ESR) experiments have been carried out at cryogenic temperatures (4.2 T 35 K) and room temperatures at 9.0 and 20.9 GHz on the Pb0 and Pb1 (commonly referred to as Pb) spin-active defects residing at the Si/SiO2 interface. The ESR lineshapes were shown to display gaussian... (Read more)
- 9. J. Appl. Phys. 56, 2844-2849 (1984) , “Electronic traps and Pb centers at the Si/SiO2 interface: Band-gap energy distribution”, E. H. Poindexter, G. J. Gerardi, M. -E. Rueckel, P. J. Caplan, N. M. Johnson, D. K. BiegelsenEnergy distribution of Pb centers (·SiSi3) and electronic traps (Dit) at the Si/SiO2 interface in metal-oxide-silicon (MOS) structures was examined by electric-field-controlled electron paramagnetic resonance (EPR)... (Read more)
- 10. Appl. Phys. Lett. 44, 228-230 (1984) , “Optically induced electron spin resonance and spin-dependent recombination in Si/SiO2”, B. HendersonIn state-of-the-art Si/SiO2 wafers the concentration of paramagnetic interface states (1010 cm2) is almost too low to be detected by electron spin resonance (ESR). This letter describes experiments which show that the ESR signal of singly occupied dangling bond... (Read more)
- 11. Appl. Phys. Lett. 44, 96-98 (1984) , “Paramagnetic trivalent silicon centers in gamma irradiated metal-oxide-silicon structures”, P. M. Lenahan and P. V. DressendorferWe find that two paramagnetic ``trivalent silicon'' centers appear to be primarily responsible for radiation damage in metal-oxide-silicon structures. Applied Physics Letters is copyrighted by The American Institute of Physics. ... (Read more)
- 12. Solid State Commun. 57, 615-617 (1986) , “THE OPTICALLY DETECTED MAGNETIC RESONANCE OF DANGLING BONDS AT THE Si/SiO2 INTERFACE”, K. M. Lee, L. C. Kimerling, B. G. Bagley, W. E. QuinnThe optically detected magnetic resonance (ODMR) observation of dangling bonds at the Si/SiO2 interface (Pb centers) is reported in this Communication. A luminescence quenching signal is identified as arising from the Pb center through its axially symmetry g tensor along the <1 1 1#62;... (Read more)
- 13. Phys. Rev. B 33, 4471 (1986) , “Strain broadening of the dangling-bond resonance at the (111) Si-SiO2 interface”, K. L. BrowerIt is observed that the linewidth and line shape of the Zeeman resonance associated with dangling bonds at the (111)Si-SiO2 interface (Pb centers) vary with the direction of the applied magnetic field. An analysis of the line shape of this resonance indicates that it can be... (Read more)
- 14. Phys. Rev. B 34, 3610-3619 (1986) , “Dipolar interactions between dangling bonds at the (111) Si-SiO2 interface”, K. L. Brower, T. J. HeadleyIn this paper a computational model is developed which allows one to calculate the contribution to the Zeeman linewidth arising from magnetic dipole-dipole interactions between unpaired electrons in the dilute limit, which in our specific application correspond to dangling bonds (Pb... (Read more)
- 15. Appl. Phys. Lett. 48, 972-974 (1986) , “Electron spin resonance of [1-11], [-111], and [11-1] oriented dangling orbital Pb0 defects at the (111) Si/SiO2 interface”, A. StesmansThe observation of (111) Si/SiO2 interface Pb0 defects (modeled as 0SiSi3) with dangling bonds positioned along [11], [11], and [11] from low-temperature (T30 K) electron spin resonance measurements is reported. This is connected with... (Read more)
- 16. Appl. Phys. Lett. 49, 348-350 (1986) , “Interface traps and Pb centers in oxidized (100) silicon wafers”, G. J. Gerardi, E. H. Poindexter, P. J. Caplan, N. M. JohnsonThe band-gap energy distribution of Pb centers on oxidized (100) Si wafers has been determined and compared with interface electrical trap density Dit. Two different Pb centers are observed on (100) Si: Pb0,... (Read more)
- 17. Phys. Rev. B 36, 9638-9648 (1987) , “Theory of the Pb center at the <111> Si/SiO2 interface”, A. H. EdwardsWe present a series of semiempirical calculations on threefold-coordinated silicon at the ?111? Si/SiO2 interface. These were performed on finite clusters of atoms with use of hydrogen terminators in an unrestricted Hartree-Fock formalism wherein we include lattice relaxations. We have... (Read more)
- 18. Appl. Phys. Lett. 50, 1450 (1987) , “Paramagnetic centers at Si-SiO2 interfaces in silicon-on-insulator films”, W. E. CarlosElectron spin resonance measurements of silicon-on-insulator materials formed oxygen implantation are reported. The principal paramagnetic defect observed is a Pb center at the interface between Si and SiO2 precipitates in the Si film over the buried oxide layer.... (Read more)
- 19. Phys. Rev. B 38, 9674-9685 (1988) , “Hyperfine interactions in cluster models of the Pb defect center”, M. Cook, C. T. WhiteHyperfine interactions in the Pb center (denoted schematically as Si3?Si?) at the Si(111)/SiO2 interface have been studied with use of spin-polarized self-consistent multiple-scattering X? calculations on Si22H21/Si6O18... (Read more)
- 20. Semicond. Sci. Technol. 4, 1045-1060 (1989) , “Spin-dependent and localisation effects at Si/SiO2 device interfaces”, B. Henderson , M. Pepper , R. L. Vranch
- 21. IEEE Trans. Nucl. Sci. 36, 1800-1807 (1989) , “A spin dependent recombination study of radiation induced defects at and near the Si/SiO2 interface”, M. A. Jupina , P. M. Lenahan
- 22. Phys. Rev. B 42, 11352-11354 (1990) , “Source of 17O hyperfine broadening of the Pb resonance associated with the (111) Si-SiO2 interface”, K. L. BrowerThe Pb center is primarily a silicon dangling-bond type of defect at the (111) Si-SiO2 interface that is observable with electron paramagnetic resonance (EPR). Dry oxidation at 750 °C of (111) silicon with O2 enriched with 17O (I=5/2) to 51.26% is observed... (Read more)
- 23. Phys. Rev. B 42, 3765 (1990) , “Observation of dipolar interactions between Pb0 defects at the (111) Si/SiO2 interface”, A. Stesmans, G. Van GorpDipole-dopole (DD) interactions between Pb0 (Si?Si3) defects at the two-dimensional (2D) (111) Si/SiO2 interface are revealed by electron-spin resonance. A DD fine-structure doublet develops with increasing [Pb0] resulting in a line shape characteristic of... (Read more)
- 24. IEEE Trans. Nucl. Sci. 37, 1650-1657 (1990) , “Spin dependent recombination: A 29Si hyperfine study of radiation-induced Pb centers at the Si/SiO2 interface”, M. A. Jupina , P. M. Lenahan
- 25. IBM J.RES. DEVELOP. 34, 227-242 (1990) , “Internal probing of submicron FETs and photoemission using individual oxide traps”, P. Restle, A. Gnudi
- 26. J. Non-Cryst. Solids 149, 137-160 (1992) , “Electron spin resonance characterization of self-trapped holes in amorphous silicon dioxide”, David L. GriscomThe electron spin resonance spectra of radiation-induced self-trapped holes (STHs) in amorphous silicon dioxide are isolated by isochromal annealing experiments and computer simulation analyses. Two distinct components, denoted STH1 and STH2 (plus a third component intermediate between the two),... (Read more)
- 27. Appl. Phys. Lett. 61, 2887-2889 (1992) , “Identification of an interface defect generated by hot electrons in SiO2”, J. H. Stathis and D. J. DiMariaHot electrons in the gate dielectric (SiO2) of field effect transistors create defects at the Si/SiO2 interface. Using electrically detected magnetic resonance, we have identified a major component of these interface defects as the well-known Pb0 center. We... (Read more)
- 28. Phys. Rev. B 47, 10899-10902 (1993) , “Defects in porous p-type Si: An electron-paramagnetic-resonance study”, H. J. von Bardeleben, D. Stievenard, A. Grosman, C. Ortega, J. SiejkaThe defects in p+ porous silicon of low and high porosity have been studied by using electron-paramagnetic-resonance (EPR) spectroscopy and compared with an impurity analysis obtained from nuclear reaction analysis (NRA). The EPR measurements show, in both high- and low-porosity samples,... (Read more)
- 29. Phys. Rev. B 48, 2418-2435 (1993) , “Structural relaxation of Pb defects at the (111)Si/SiO2 interface as a function of oxidation temperature: The Pb-generation-stress relationship”, A. StesmansElectron-spin-resonance (ESR) studies of intrinsic Pb defects at the (111)Si/SiO2 interface have been carried out as a function of oxidation temperature Tox for the range 22<ToxTox and high-Tox... (Read more)
- 30. Appl. Phys. Lett. 63, 1510-1512 (1993) , “Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen”, E. Cartier, J. H. Stathis, and D. A. BuchananAtomic hydrogen is found to simultaneously passivate and depassivate silicon dangling bonds at the Si(111)/SiO2 interface at room temperature via the reactions Pb+H0" align="bottom">PbH and... (Read more)
- 31. Appl. Phys. Lett. 63, 920-922 (1993) , “Nature of Pb-like dangling-orbital centers in luminescent porous silicon”, F. C. Rong, J. F. Harvey, E. H. Poindexter, G. J. GerardiThe Pb-like dangling-orbit centers in luminescent porous silicon (LPSi) have been enhanced to very high concentration (1015 cm2) by gentle oxidation. High signal-to-noise ratio and very sharp lines enable the g-value maps, and... (Read more)
- 32. Phys. Rev. Lett. 72, 2745-2748 (1994) , “Atomic Hydrogen Reactions with Pb Centers at the (100) Si/SiO2 Interface”, J. H. Stathis, E. CartierWe have investigated the reaction of atomic hydrogen with defects at the (100) Si/SiO2 interface. Similar to previous results on the (111) interface, we find that the two paramagnetic defects at the (100) interface, Pb0 and Pb1, are either passivated or produced by... (Read more)
- 33. Appl. Phys. Lett. 69, 2252 (1996) , “Hole traps in oxide layers thermally grown on SiC”, V. V. Afanas'ev and A. StesmansHole trapping in the oxides thermally grown on different polytypes of SiC (3C, 4H, 6H) was studied using photogeneration of charge carriers in SiO2 and electron-spin-resonance spectroscopy. Oxygen vacancy defects were found to be the dominant hole traps in the oxide. Generation of... (Read more)
- 34. Phys. Rev. B 58, 15801-15809 (1998) , “Pb1 interface defect in thermal (100)Si/SiO2: 29Si hyperfine interaction”, A. Stesmans, B. Nouwen, V. V. Afanas’evAn optimized electron spin resonance study has resulted in the observation of the full angular dependence of the hyperfine interaction spectrum associated with the unpaired electron of the Pb1 point defect at the thermal (100)Si/SiO2 interface, showing that the dominant... (Read more)
- 35. Nature 396, 58-60 (1998) , “Interface structure between silicon and its oxide by first-principles molecular dynamics”, A. Pasquarello, M. S. Hybertsen, R. CarThe requirement for increasingly thin (<50 Ã…) insulating oxide layers in silicon-based electronic devices highlights the importance of characterizing the Si–SiO2 interface structure at the atomic scale. Such a characterization relies to a large extent on an understanding of the atomic-scale mechanisms that govern the oxidation process. The widely used Deal–Grove model invokes a two-step process in which oxygen first diffuses through the amorphous oxide network before attacking the silicon substrate, resulting in the formation of new oxide at the buried interface1. But it remains unclear how such a process can yield the observed near-perfect interface2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12. Here we use first-principles molecular dynamics13, 14, 15 to generate a model interface structure by simulating the oxidation of three silicon layers. The resulting structure reveals an unexpected excess of silicon atoms at the interface, yet shows no bonding defects. Changes in the bonding network near the interface occur during the simulation via transient exchange events wherein oxygen atoms are momentarily bonded to three silicon atoms — this mechanism enables the interface to evolve without leaving dangling bonds. (Read more)
- 36. J. Vac. Sci. Technol. B 16, 2134-2153 (1998) , “What can electron paramagnetic resonance tell us about the Si/SiO2 system?”, P. M. Lenahan, J. F. Conley, Jr.Electron paramagnetic resonance (EPR) measurements of Si/SiO2 systems began over 30 years ago. Most EPR studies of Si/SiO2 systems have dealt with two families of defects: Pb centers and E centers. Several variants from each group have... (Read more)BPSG PSG Si SiO2| EDMR EPR electric-field-effect electrical-meas. etching gamma-irradiation| 10B 11B 1H 29Si 2D 31P BOHC Boron Deuterium E' E'-delta H(I) Hydrogen Nb Nitrogen Oxygen P1 P2 P4 POHC Pb Pb0 Pb1 Phosphorus Silicon amorphous complex(=3) dangling-bond device dielectric interface pair(=2) | last update: Takahide Umeda
- 37. J. Appl. Phys. 83, 2449-2457 (1998) , “Electron spin resonance features of interface defects in thermal (100)Si/SiO2”, A. Stesmans and V. V. Afanas'evElectron spin resonance (ESR) on thermal (100)Si/SiO2 predominantly exhibiting either the Pb0 or Pb1 interface defect confirms the Pb1 point symmetry as monoclinic-I with g1 = 2.0058,... (Read more)
- 38. Physica B 273-274, 1015 (1999) , “Electron spin resonance study of the interaction of hydrogen with the (1 1 1)Si/SiO2 interface: Pb-hydrogen interaction kinetics”, A. Stesmans.The thermal interaction kinetics of interfacial Si dangling bond Pb defects (Si3≡Si·) in (1 1 1)Si/SiO2, including passivation in molecular hydrogen (pictured as PbH formation) and dissociation in vacuum, is readdressed. An initial simple thermal model had concluded simple exponential... (Read more)
- 39. Phys. Rev. Lett. 83, 372 (1999) , “Hydrogen Electrochemistry and Stress-Induced Leakage Current in Silica”, Peter E. Blöchl and James H. StathisHydrogen-related defects in oxygen-deficient silica, representing the material of a thermal gate oxide, are analyzed using first-principles calculations. Energetics and charge-state levels of oxygen vacancies, hydrogen, and their complexes in the silica framework are mapped out. The neutral hydrogen... (Read more)
- 40. Phys. Rev. B 59, 13242 (1999) , “Electrically detected magnetic resonance of two-dimensional electron gases in Si/SiGe heterostructures ”, C. F. O. Graeff, M. S. Brandt, M. Stutzmann, M. Holzmann, G. Abstreiter, F. SchfflerStrained Si/Si0.75Ge0.25 heterostructures, grown by solid source e-beam evaporation molecular-beam epitaxy on Si(100) substrates, have been studied by electrically detected magnetic resonance. Samples with a low-temperature mobility of about 105 cm2/V s... (Read more)
- 41. Mater. Res. Soc. Symp. Proc. 573, 107 (1999) , “ELECTRICAL AND OPTICAL STUDY OF CHARGE TRAPS AT PASSIVATED GaAs SURFACES”, Y. Mochizuki
- 42. Phys. Rev. Lett. 85, 2773-2776 (2000) , “Dangling Bond Defects at Si-SiO2 Interfaces: Atomic Structure of the Pb1 Center”, A. Stirling, A. Pasquarello, J.-C. Charlier, R. CarUsing a first-principles approach, we characterize dangling bond defects at Si-SiO2 interfaces by calculating hyperfine parameters for several relaxed structures. Interface models, in which defect Si atoms remain close to crystalline sites of the substrate upon relaxation, successfully... (Read more)
- 43. Phys. Rev. B 61, 16068-16076 (2000) , “Dipolar interactions between unpaired Si bonds at the (111)Si/SiO2 interface”, A. Stesmans, B. NouwenAn electron spin resonance (ESR) study has been carried out on the Pb centers (interfacial ?Si?Si3) in standard thermal (111)Si/SiO2, of which, in the as-grown state, a density 4.9×1012 cm-2 is inherently incorporated. The Pb density... (Read more)
- 44. Phys. Rev. B 61, 8393-8403 (2000) , “Dissociation Kinetics of Hydrogen-Passivated Pb Defects at the (111)Si/SiO2 Interface”, A. Stesmans.An electron-spin-resonance study has been carried out, both isothermally and isochronically, of the recovery under vacuum annealing from the hydrogen passivated state (symbolized as HPb) of paramagnetic Pb centers (Si3?Si•) at the (111)Si/SiO2... (Read more)
- 45. J. Appl. Phys. 88, 1784-1787 (2000) , “Electron Spin Resonance Centers Associated with Oxygen Precipitates in Czochralski Silicon Crystals”, M. Koizuka, H. Yamada-Kaneta.We have previously concluded that the oxygen-precipitate-associated defects that we identified by the deep levels at Ev + 0.30 eV and Ec0.25 eV were the Pb centers generated in the interface between the oxygen... (Read more)
- 46. Appl. Phys. Lett. 76, 1585 (2000) , “Reduction of interface-state density in 4H–SiC n-type metal–oxide–semiconductor structures using high-temperature hydrogen annealing”, K. Fukuda, S. Suzuki, T. Tanaka, K. AraiThe effects of hydrogen annealing on capacitancevoltage (CV) characteristics and interface-state density (Dit) of 4HSiC metaloxidesemiconductor (MOS) structures have been investigated. The Dit was reduced to as low as... (Read more)
- 47. Appl. Phys. Lett. 76, 3771-3773 (2000) , “Do Pb1 centers have levels in the Si band gap? Spin-dependent recombination study of the Pb1 "hyperfine spectrum"”, Tetsuya D. Mishima and Patrick M. LenahanThe electronic properties of the (001) Si/SiO2 Pb1 defect are the subject of considerable controversy. We present spin-dependent recombination results which indicate most strongly that the Pb1 centers have levels in the Si band gap. Our... (Read more)
- 48. Appl. Phys. Lett. 77, 866 (2000) , “Effect of oxidation method and post-oxidation annealing on interface properties of metal–oxide–semiconductor structures formed on n-type 4H-SiC C(000) face”, K. Fukuda, W. J. Cho, K. Arai, S. Suzuki, J. Senzaki, T. TanakaThe C(000) face of silicon carbide (SiC) has superior properties such as a faster oxidation ratio and a smoother surface compared with the Si(0001) face. We have investigated the oxidation and post-oxidation annealing effects on the capacitancevoltage and the interface state density... (Read more)
- 49. Phys. Rev. Lett. 86, 1054 (2001) , “Electron Spin Resonance Observation of the Si(111)- (7×7) Surface and Its Oxidation Process”, Takahide Umeda, Masayasu Nishizawa, Tetsuji Yasuda, Junichi Isoya, Satoshi Yamasaki, and Kazunobu TanakaElectron spin resonance (ESR) observation of dangling-bond states on the Si(111)- (7×7) surface is demonstrated for the first time. The ESR spectra clearly show that a reaction of molecular oxygen with the Si(111)- (7×7) surface is associated with the appearance of a new dangling-bond center at... (Read more)Si SiO2| EPR STM/AFM/SPM| Oxygen Pb Ps0 Ps1 Silicon dangling-bond interface surface .inp files: Si/surface(111) | last update: Masatoshi Sasaki
- 50. Phys. Rev. Lett. 87, 165506 (2001) , “Defect Generation by Hydrogen at the Si-SiO2 Interfaces”, S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, and S. T. PantelidesHydrogen is known to passivate Si dangling bonds at the Si-SiO 2 interface, but the subsequent arrival of H + at the interface causes depassivation of Si-H bonds. Here we report first-principles density functional calculations, showing that, contrary to conventional... (Read more)
- 51. Jpn. J. Appl. Phys. 40, 2840 (2001) , “Spin-Dependent Trap-Assisted Tunneling Current in Ultra-Thin Gate Dielectrics”,We have characterized the leakage current paths of ultra-thin gate dielectrics using spin-dependent tunneling (SDT) spectroscopy. A spin-dependent current was detected in metal-oxide-semiconductor diodes with chemical-vapor-deposition SiN gate films with thickness less than 3 nm. We examined the nature of the trap sites in terms of g-value, bias-dependent signal intensity, and magnetic-field orientation dependence. The main feature of the observed spectrum is attributed to a paramagnetic Si site in the SiN films. By using a quantitative model of electron spin-polarization, we were able to estimate the ratio of trap-assisted current to the total leakage current. (Read more)
- 52. Appl. Phys. Lett. 78, 1453-1454 (2001) , “Response to "Comment on `Do Pb1 centers have levels in the Si band gap? Spin-dependent recombination study of the Pb1 "hyperfine spectrum" ' " [Appl. Phys. Lett. 78, 1451 (2001)]”, Tetsuya D. Mishima and Patrick M. LenahanWe recently published a letter in which we utilized spin-dependent recombination (SDR) measurements to demonstrate that Pb1 centers, silicon dangling-bond defects at the (001) Si/SiO2 interface, have electronic levels in the silicon band gap.1 In their comment on our... (Read more)
- 53. Appl. Phys. Lett. 78, 4043 (2001) , “Response to "Comment on `Reduction of interface-state density in 4H–SiC n-type metal–oxide–semiconductor structures using high-temperature hydrogen annealing' " [Appl. Phys. Lett. 78, 4043 (2001)]”, K. Fukuda, K. Arai, S. Suzuki, T. TanakaIn our letter, we suggested that the reduction of interface state density (Dit) is caused by the termination of Si and C dangling bonds with hydrogen.1 In a comment on our letter,2 Afanas'ev et al. argue that the Dit originates from carbon clusters at the... (Read more)
- 54. Phys. Rev. Lett. 89, 256102 (2002) , “Limiting Step Involved in the Thermal Growth of Silicon Oxide Films on Silicon Carbide”, I. C. Vickridge, I. Trimaille, J.-J. Ganem, S. Rigo, C. Radtke, I. J. R. Baumvol, F. C. StedileThermal growth of silicon oxide films on silicon carbide in O2 was investigated using oxygen isotopic substitution and narrow resonance nuclear reaction profiling. This investigation was carried out in parallel with the thermal growth of silicon oxide films on Si. Results demonstrate that... (Read more)
- 55. Appl. Phys. Lett. 80, 1261-1263 (2002) , “Hole trapping in ultrathin Al2O3 and ZrO2 insulators on silicon”, V. V. Afanas'ev and A. StesmansOptical injection of electron-hole pairs in 35 nm thick layers of SiO2, Al2O3, ZrO2 and their stacks on (100)Si is found to result in positive oxide charging, suggesting trapping of holes. In thin layers of the high-permittivity metal oxides... (Read more)
- 56. Appl. Phys. Lett. 80, 1945-1947 (2002) , “Density of states of Pb1 Si/SiO2 interface trap centers”, J. P. Campbell and P. M. LenahanThe electronic properties of the (100) Si/SiO2 interfacial defect called Pb1 are quite controversial. We present electron spin resonance measurements that demonstrate: (1) that the Pb1 defects have levels in the silicon band gap, (2) that... (Read more)
- 57. Appl. Phys. Lett. 80, 4753-4755 (2002) , “Characterization of S centers generated by thermal degradation in SiO2 on (100)Si”, A. Stesmans, B. Nouwen, D. Pierreux, and V. V. Afanas'evThe structural degradation of thermal SiO2 on (100)Si under isochronal vacuum annealing in the range Tan = 950 °C1250 °C was monitored by electron spin resonance (ESR) in terms of point defect creation, including... (Read more)
- 58. Appl. Phys. Lett. 81, 1128-1130 (2002) , “Electron spin resonance study of interface defects in atomic layer deposited hafnium oxide on Si”, A. Y. Kang, P. M. Lenahan, J. F. Conley Jr., R. SolankiWe report electron spin resonance (ESR) observation of interface defects at the HfO2/(111)Si boundary for HfO2 films deposited via atomic layer chemical vapor deposition using Hf(NO3)4 as a precursor. We observe several signals, dominated by one due to a... (Read more)
- 59. Appl. Phys. Lett. 81, 1818 (2002) , “Interface structures generated by negative-bias temperature instability in Si/SiO2 and Si/SiOxNy interfaces”, J. Ushio, T. Maruizumi, K. Kushida-AbdelghafarWe used a density functional method to investigate the mechanism of negative-bias temperature instability (NBTI) and resultant structural changes of Si/SiO2 and Si/SiOxNy interfaces. The reaction energies for the water- and hydrogen-originated... (Read more)
- 60. Appl. Phys. Lett. 81, 1839 (2002) , “Dual behavior of H+ at Si–SiO2 interfaces: Mobility versus trapping”, S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, S. T. PantelidesWe report first-principles calculations showing that protons in the vicinity of a SiSiO2 interface can behave in two different ways. At an abrupt interface without suboxide bonds (SiSi bonds at the oxide side of the interface) H+ does not become trapped but migrates... (Read more)
- 61. Appl. Phys. Lett. 81, 2397-2399 (2002) , “Hydrogen redistribution induced by negative-bias-temperature stress in metal–oxide–silicon diodes”, Ziyuan LiuPoly-Si/SiO2/Si diodes in which oxides were grown thermally under wet oxidation conditions and subsequently treated by a post-oxidation anneal (POA) have been characterized electrically and chemically before and after applying negative-bias-temperature stress (NBTS). It was confirmed that... (Read more)
- 62. Phys. Rev. B 67, 195338 (2003) , “Layer-resolved kinetics of Si oxidation investigated using the reflectance difference oscillation method”, T. Yasuda, N. Kumagai, M. Nishizawa, S. Yamasaki, H. Oheda, and K. YamabeDry oxidation kinetics of the Si(001) surface has been investigated using reflectance difference oscillation to resolve atomic-scale phenomena. The activation energy for oxidation has been found to increase as the oxide-Si interface moves in the depth direction, reaching the value for bulk... (Read more)
- 63. J. Appl. Phys. 94, 1 (2003) , “Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing”,We present an overview of negative bias temperature instability (NBTI) commonly observed in p-channel metaloxidesemiconductor field-effect transistors when stressed with negative gate voltages at elevated temperatures. We discuss the results of such stress on device and circuit... (Read more)
- 64. Appl. Phys. Lett. 82, 269 (2003) , “Relationship between interfacial nitrogen concentration and activation energies of fixed-charge trapping and interface state generation under bias-temperature stress condition”,The influence of nitrogen concentration at a nitrided oxide/silicon interface on the activation energies of both near-interface fixed-charge trapping and interface state generation caused by negative bias temperature instability stress has been studied quantitatively. It is observed that the charge... (Read more)
- 65. Appl. Phys. Lett. 82, 3677-3679 (2003) , “Interface defects responsible for negative-bias temperature instability in plasma-nitrided SiON/Si(100) systems”, Shinji Fujieda, Yoshinao Miura, and Motofumi SaitohInterface defects generated by negative-bias temperature stress (NBTS) in an ultrathin plasma- nitrided SiON/Si(100) system were characterized by using D2 annealing, conductance-frequency measurements, and electron-spin resonance measurements. D2 annealing was shown to lower... (Read more)
- 66. Appl. Phys. Lett. 83, 1647 (2003) , “Dynamic recovery of negative bias temperature instability in p-type metal–oxide–semiconductor field-effect transistors”,An unexpected physical phenomenondynamic recovery of negative bias temperature instability (NBTI)is reported. NBTI degradation in p-type metaloxidesemiconductor field-effect transistors is significantly (by ~40%) reduced after stress interruption. NBTI recovery... (Read more)
- 67. Appl. Phys. Lett. 83, 3407-3409 (2003) , “Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si”, A. Y. Kang, P. M. Lenahan, J. F. Conley Jr.We observed two paramagnetic defects in thin films of HfO2 on silicon with electron spin resonance. Both appear after photoinjecting electrons into the dielectric. Strong spectroscopic evidence links one spectrum to an O2-" align="middle"> defect. A second spectrum is... (Read more)
- 68. Semiconductors 38, 745 (2004) , “Promotion of metallurgical reactions at the Ni-SiC interface by irradiation with protons”, V. V. Kozlovski, P. A. Ivanov, D. S. Rumyantsev, V. N. Lomasov, T. P. SamsonovaIt is shown that irradiation of Ni-SiC structures with protons at elevated temperatures promotes metallurgical reactions at the Ni-SiC interface owing to a diffusion mechanism stimulated by the generation of radiation defects. The most pronounced effect of mixing at the metal-semiconductor interface is observed if the thickness of the metal film is equal to the projected range of protons. (Read more)
- 69. Phys. Rev. Lett. 92, 015502 (2004) , “Identification of the Carbon Dangling Bond Center at the 4H–SiC/SiO2 Interface by an EPR Study in Oxidized Porous SiC”, J. L. Cantin, H. J. von Bardeleben, Y. Shishkin, Y. Ke, R. P. Devaty, and W. J. ChoykeWe report the observation of a paramagnetic interface defect in thermally oxidized porous n-type doped 4HSiC/SiO2. Based on its axial symmetry and resolved hyperfine interactions it is attributed to an sp3 carbon dangling bond center situated... (Read more)
- 70. Phys. Rev. Lett. 92, 087601 (2004) , “Hydrogen-Release Mechanisms in the Breakdown of Thin SiO2 Films”, J. Suñé and E. Y. WuThe mechanism of hydrogen release from the anode Si/SiO2 interface that triggers defect generation and finally the dielectric breakdown of the oxide in metal-oxide-semiconductor structures is investigated. Extensive experimental charge-to-breakdown statistics are used to derive the defect... (Read more)
- 71. Phys. Rev. Lett. 92, 105505 (2004) , “In situ ESR Observation of Interface Dangling Bond Formation Processes During Ultrathin SiO2 Growth on Si(111)”, W. Futako, N. Mizuochi, and S. YamasakiWe report the formation processes of interface dangling bonds (Pb centers) during initial oxidation of a clean Si(111) surface using an ultrahigh-vacuum electron-spin-resonance technique. At the oxidation of one or two Si layer(s), the Pb center... (Read more)
- 72. Phys. Rev. Lett. 93, 086102 (2004) , “Reaction of the Oxygen Molecule at the Si(100)–SiO2 Interface During Silicon Oxidation”, Angelo Bongiorno and Alfredo PasquarelloUsing constrained ab initio molecular dynamics, we investigate the reaction of the O2 molecule at the Si(100)SiO2 interface during Si oxidation. The reaction proceeds sequentially through the incorporation of the O2 molecule in a Si-Si bond and the... (Read more)
- 73. J. Appl. Phys. 95, 4096 (2004) , “Nitridation effects on Pb center structures at SiO2/Si„(100) interfaces ”,Interfacial defect structures of NO-nitride oxide on Si(100) were characterized by electron spin resonance spectroscopy. We confirmed that the effective g values of the Pb1 center are affected by interfacial nitridation even at a small nitrogen concentration of 5 at. %, while those of the Pb0 center proved to be unchanged. We observed that the shifted Pb1 line appeared gradually with interfacial nitrogen concentration, which suggests that the nitrogen-induced modified structure substitutes for the original Pb1 structure. Angular variations of the shifted Pb1 lines were also significantly different from those of pure oxide. Based on our analysis, we attributed the g value shift of the Pb1 center to dangling bond tilting, caused by the displacement of nearest-neighbor Si atoms. (Read more)
- 74. IEEE Electron Device Lett. 25, 153 (2004) , “Evaluation of NBTI in HfO2 Gate-Dielectric Stacks With Tungsten Gates”,
- 75. Appl. Phys. Lett. 84, 1498 (2004) , “Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H–SiC at the oxide/(110) 4H–SiC interface”, S. Dhar, Y. W. Song, L. C. Feldman, T. Isaacs-Smith, C. C. Tin, J. R. Williams, G. Chung, T. Nishimura, D. Starodub, T. Gustafsson, E. GarfunkelNitric oxide postoxidation anneal results in a significant decrease of defect state density (Dit) near the conduction bandedge of n-4HSiC at the oxide/(110) 4HSiC interface. Comparison with measurements on the conventional (0001) Si-terminated face... (Read more)
- 76. Appl. Phys. Lett. 84, 3406 (2004) , “Structure of 6H silicon carbide/silicon dioxide interface trapping defects”, David J. Meyer, Nathaniel A. Bohna, Patrick M. Lenahan, Aivars J. LelisWe utilize spin-dependent recombination (SDR) to observe deep level trap defects at or very near the interface of 6H silicon carbide and the SiO2 gate dielectric in SiC metal-oxide-semiconductor field effect transistors. The SDR response is strongly correlated to SiC/SiO2... (Read more)
- 77. Appl. Phys. Lett. 84, 3406-3408 (2004) , “Structure of 6H silicon carbide/silicon dioxide interface trapping defects”, David J. Meyer, Nathaniel A. Bohna, and Patrick M. LenahanWe utilize spin-dependent recombination (SDR) to observe deep level trap defects at or very near the interface of 6H silicon carbide and the SiO2 gate dielectric in SiC metal-oxide-semiconductor field effect transistors. The SDR response is strongly correlated to SiC/SiO2... (Read more)
- 78. Microelectron. Reliability 45, 57 (2005) , “Characterization of interface defects related to negative-bias temperature instability SiON/Si<100> systems ”,Interface defects related to negative-bias temperature instability (NBTI) in an ultrathin plasma-nitrided SiON/ Si<100> system were characterized by using conductance–frequency measurements, electron-spin resonance measure- ments, and synchrotron radiation X-ray photoelectron spectroscopy. It was confirmed that NBTI is reduced by using D2-annealing instead of the usual H2-annealing. Interfacial Si dangling bonds (Pb1 and Pb0 centers) were detected in a sample subjected to negative-bias temperature stress (NBTS). Although we suggest that NBTS also generates non-Pb defects, it does not seem to generate nitrogen dangling bonds. These results show that NBTI of the plasma-nitrided SiON/Si system is predominantly due to Pb depassivation. Plasma nitridation was also found to increase the Pb1/Pb0 density ratio, modify the Pb1 defect structure, and increase the latent interface trap density by generating Si suboxides at the interface. These changes are likely to be the causes of NBTI in ultrathin plasma-nitrided SiON/Si systems. (Read more)
- 79. Microelectron. Reliability 45, 71 (2005) , “A comprehensive model of PMOS NBTI degradation ”,Negative bias temperature instability has become an important reliability concern for ultra-scaled Silicon IC technology with significant implications for both analog and digital circuit design. In this paper, we construct a comprehensive model for NBTI phenomena within the framework of the standard reaction–diffusion model. We demonstrate how to solve the reaction–diffusion equations in a way that emphasizes the physical aspects of the degradation process and allows easy generalization of the existing work. We also augment this basic reaction–diffusion model by including the temperature and field-dependence of the NBTI phenomena so that reliability projections can be made under arbitrary circuit operating conditions. (Read more)
- 80. J. Vac. Sci. Technol. B 23, 594 (2005) , “Electronic defect states at annealed metal/4H–SiC interfaces”, S. Tumakha, S. H. Goss, L. J. Brillson, R. S. OkojieWe have used low energy electron-excited nanoscale luminescence spectroscopy (LEEN) to study the formation of electronic surface states at metal/4HSiC contacts. These junctions were formed using both low and high reactivity metals to study how the nature of interface chemical bonding affects... (Read more)
- 81. J. Appl. Phys. 97, 034302 (2005) , “Interfaces between 4H-SiC and SiO2: Microstructure, nanochemistry, and near-interface traps”, Eckhard Pippel, Jörg Woltersdorf, Halldor Ö. Ólafsson, Einar Ö. SveinbjörnssonWe report on electrical and microscopic investigations aimed to clarify the origin of near-interface traps (NITs) in metalsilicon dioxide4H-silicon carbide structures. Using capacitancevoltage and thermal dielectric relaxation current (TDRC) analysis we investigated NITs close to... (Read more)
- 82. Appl. Phys. Lett. 86, 122102 (2005) , “Current transport property of n-GaN/n-6H–SiC heterojunction: Influence of interface states”, Y. Huang, X. D. Chen, S. Fung, C. D. Beling, C. C. Ling, X. Q. Dai, and M. H. XieHeterostructures of n-GaN/n-6HSiC grown by hydride vapor phase epitaxy (HVPE) and molecular-beam epitaxy (MBE) are characterized with the currentvoltage (IV), capacitancevoltage (CV), and deep level transient spectroscopy (DLTS)... (Read more)
- 83. Appl. Phys. Lett. 87, 204106 (2005) , “Direct observation of the structure of defect centers involved in the negative bias temperature instability”, J. P. Campbell and P. M. LenahanWe utilize a very sensitive electron paramagnetic resonance technique called spin-dependent recombination to observe and identify defect centers generated by modest negative bias and moderately elevated temperatures in fully processed p-channel metal-oxide-silicon field-effect transistors.... (Read more)
- 84. Appl. Phys. Lett. 87, 212501 (2005) , “Spin-dependent tunneling through high-k LaAlO3”, V. Garcia, M. Bibes, J.-L. Maurice, E. Jacquet, K. Bouzehouane, J.-P. Contour, A. BarthélémyWe report on the use of the LaAlO3 (LAO) high-k dielectric as a tunnel barrier in magnetic tunnel junctions. From tunnel magnetoresistance (TMR) measurements on epitaxial La2/3Sr1/3MnO3/LAO/La2/3Sr1/3MnO3 junctions,... (Read more)
- 85. Phys. Rev. Lett. 97, 016102 (2006) , “Scaling and Universality of Roughening in Thermal Oxidation of Si(001)”, Hiroo Omi, Hiroyuki Kageshima, and Masashi UematsuBy analyzing atomic force microscopy images, we derive a continuum equation that quantitatively explains the roughening at the Si(001)-SiO2 interface during thermal oxidation at the temperature at 1200 °C in an Ar atmosphere containing a small fraction of O2. We also show... (Read more)
- 86. Phys. Rev. Lett. 97, 116101 (2006) , “Oxygen Migration, Agglomeration, and Trapping: Key Factors for the Morphology of the Si-SiO2 Interface”, L. Tsetseris and S. T. PantelidesThe measured activation energies for oxide growth rates at the initial and late stages of oxidation of Si are 2 and 1.2 eV, respectively. These values imply that oxidation can proceed at temperatures much smaller than the 800 °C normally used to obtain devices with exceptionally smooth... (Read more)
- 87. Phys. Rev. B 73, 014111 (2006) , “Structure of SiO2/4H-SiC interface probed by positron annihilation spectroscopy”, M. Maekawa, A. Kawasuso, M. Yoshikawa, A. Miyashita, R. Suzuki, T. OhdairaThe structure of the SiO2/4H-SiC interface produced by dry oxidation has been studied using positron annihilation spectroscopy using energy-variable slow positron beams. Based on the Doppler broadening shape and wing parameter (S-W) correlation, the interface layer was... (Read more)
- 88. Phys. Rev. B 73, 073302 (2006) , “Origin of Pb1 center at SiO2/Si(100) interface: First-principles calculations”, K. Kato, T. Yamasaki, T. UdaBased on first-principles calculations, we studied the generation behavior of Pb centers at SiO2/Si interfaces, especially for Pb1 centers, under oxidation of Si(100) surfaces. Pb1 centers were found to be formed... (Read more)
- 89. Phys. Rev. B 74, 033309 (2006) , “Effect of the triplet state on the random telegraph signal in Si n-MOSFETs”, Enrico Prati, Marco Fanciulli, Giorgio Ferrari, and Marco SampietroWe report on the static magnetic field dependence of the random telegraph signal in a submicrometer silicon n-metal-oxide-semiconductor field-effect transistor. Using intense magnetic fields and low temperatures, we find that the characteristic time ratio changes by three orders of magnitude... (Read more)
- 90. Phys. Rev. B 74, 035112 (2006) , “Charge localization or itineracy at LaAlO3/SrTiO3 interfaces: Hole polarons, oxygen vacancies, and mobile electrons”, R. Pentcheva and W. E. PickettWhile correlated electron behavior is to be expected at oxide interfaces (IFs) involving Mott insulators, we show how strong correlations in the oxygen 2p states may be necessary to account for observed insulating behavior at charged (001)-IFs between the band insulators LaAlO3 and... (Read more)
- 91. Phys. Rev. B 74, 035309 (2006) , “Structure of the interface between ultrathin SiO2 films and 4H-SiC(0001)”, Mark Schürmann, Stefan Dreiner, Ulf Berges, and Carsten WestphalThe interface between ultrathin SiO2 films and 4H-SiC(0001) has been studied by x-ray photoelectron spectroscopy (XPS) and photoelectron diffraction. The investigation was performed for two different films. An ordered silicate layer showed a clear (×)R30°... (Read more)
- 92. Phys. Rev. B 74, 184108 (2006) , “Interpreting Mössbauer spectra reflecting an infinite number of sites: An application to Fe1−xSi synthesized by pulsed laser annealing”, A. Falepin, S. Cottenier, C. M. Comrie, and A. VantommeWe present a study on the interpretation of conversion electron Mössbauer spectra reflecting an infinite number of sites, in casu Mössbauer spectroscopy on Fe1−xSi layers on Si, synthesized by pulsed laser annealing. These spectra display a broad... (Read more)
- 93. Microelectron. Reliability 46, 1 (2006) , “NBTI degradation: From physical mechanisms to modelling”,An overview of the evolution of transistor parameters under negative bias temperature instability stress conditions commonly observed in p-MOSFETs in recent technologies is presented. The physical mechanisms of the degradation as well as the different defects involved have been discussed according to a systematic set of experiments with different stress conditions. According to our findings, a physical model is proposed which could be used to more accurately predict the transistor degradation. Finally, based on our new present understanding, a new characterization methodology is proposed, which would open the way to a more accurate determination of parameter shifts and thus allowing implementing the degradation into design rules. (Read more)
- 94. J. Appl. Phys. 99, 103507 (2006) , “Nonconservative Ostwald ripening of a dislocation loop layer under inert nitrogen-rich SiO2/Si interfaces”, D. Skarlatos, P. Tsouroutas, V. Em. Vamvakas, and C. TsamisIn this work we perform a systematic study of the dissolution of a dislocation loop layer under the influence of inert SiO2/Si and nitrogen-rich SiO2/Si interfaces. The composition of the dislocation loop layer was just after its formation 10%20% Frank dislocation loops... (Read more)
- 95. J. Appl. Phys. 100, 023512 (2006) , “Stacking faults and twin boundaries in fcc crystals determined by x-ray diffraction profile analysis”, Levente Balogh, Gábor Ribárik, and Tamás UngárA systematic procedure is developed to evaluate the density of planar defects together with dislocations and crystallite or subgrain size by x-ray line profile analysis in fcc crystals. Powder diffraction patterns are numerically calculated by using the DIFFAX software for intrinsic and extrinsic... (Read more)
- 96. J. Appl. Phys. 100, 023711 (2006) , “Charge trapping properties at silicon nitride/silicon oxide interface studied by variable-temperature electrostatic force microscopy”, S.-D. Tzeng and S. GwoCharge trapping properties of electrons and holes in ultrathin nitride-oxide-silicon (NOS) structures were quantitatively determined by variable-temperature electrostatic force microscopy (EFM). From charge retention characteristics obtained at temperatures between 250 and 370 °C and assuming... (Read more)
- 97. J. Appl. Phys. 100, 024103 (2006) , “Scanning transmission electron microscopy investigations of interfacial layers in HfO2 gate stacks”, Melody P. Agustin, Gennadi Bersuker, Brendan Foran, Lynn A. Boatner, and Susanne StemmerElectron energy-loss spectroscopy combined with high-angle annular dark-field (HAADF) imaging in scanning transmission electron microscopy was used to investigate the chemistry of interfacial layers in HfO2 gate stacks capped with polycrystalline Si gate electrodes. To interpret the... (Read more)
- 98. J. Appl. Phys. 100, 033901 (2006) , “Spin-dependent transport in diluted-magnetic-semiconductor/semiconductor quantum wires”, Wen Xu and Yong GuoSpin-polarized transport properties have been investigated in diluted-magnetic-semiconductor/semiconductor quantum wires. We stress the effects introduced by the structural configuration and geometric parameters as well as the external magnetic field. It is found that the symmetric quantum wire... (Read more)
- 99. J. Appl. Phys. 100, 044503 (2006) , “Dislocation dynamics in strain relaxation in GaAsSb/GaAs heteroepitaxy”, B. Pérez Rodríguez and J. Mirecki MillunchickThe real-time stress evolution has been investigated during molecular-beam epitaxial growth of GaAs1xSbx/GaAs metamorphic buffer. These real-time data were obtained using an in situ multibeam optical sensor measurement and has been combined with... (Read more)
- 100. J. Appl. Phys. 100, 064501 (2006) , “Introduction of defects into HfO2 gate dielectrics by metal-gate deposition studied using x-ray photoelectron spectroscopy and positron annihilation”, A. Uedono, T. Naito, T. Otsuka, K. Shiraishi, K. Yamabe, S. Miyazaki, H. Watanabe, N. Umezawa, T. Chikyow, Y. Akasaka, S. Kamiyama, Y. Nara, and K. YamadaThe impact of TiN deposition on thin HfO2 films formed on Si substrates was studied using x-ray photoelectron spectroscopy and a monoenergetic positron beam. For the predeposition sample, the positrons implanted into Si were found to diffuse toward the HfO2/Si interface under... (Read more)
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