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- 1. Appl. Phys. Lett. 90, 074101 (2007) , “Stacking fault generation during relaxation of silicon germanium on insulator layers obtained by the Ge condensation technique”, B. Vincent, J.-F. Damlencourt, V. Delaye, R. Gassilloud, L. Clavelier, and Y. MorStacking fault generation within silicon germanium on insulator substrates fabricated by the Ge condensation technique has been evidenced by transmission electronic microscopy analyses for high Ge content enrichments (80%). This phenomenon is explained as a typical strain relaxation mechanism... (Read more)
- 2. Phys. Rev. B 75, 144108 (2007) , “Interaction mechanism between edge dislocations and asymmetrical tilt grain boundaries investigated via quasicontinuum simulations”, T. Shimokawa, T. Kinari, and S. ShintakuThe interactions between edge dislocations and grain boundaries—dislocation pileup, dislocation absorption, and dislocation transmission—are studied by performing quasicontinuum simulations. The 112 asymmetrical tilt grain boundaries with different misorientation angles are used. The... (Read more)
- 3. Phys. Rev. B 75, 134106 (2007) , “Exact linear response of reacting thermal defects driven by creation processes”, C. P. FlynnThe exact, linear response at steady state is calculated for reacting, but otherwise noninteracting, thermal defects driven by defect creation processes. The theory applies to vacancies and interstitials in the bulk, or to adatoms and advacancies on surface terraces. A wide variety of possible... (Read more)
- 4. Phys. Rev. B 75, 115127 (2007) , “Molecular microelectrostatic view on electronic states near pentacene grain boundaries”, Stijn Verlaak and Paul HeremansGrain boundaries are the most inevitable and pronounced structural defects in pentacene films. To study the effect of those structural defects on the electronic state distribution, the energy levels of a hole on molecules at and near the defect have been calculated using a submolecular... (Read more)
- 5. Phys. Rev. B 75, 085301 (2007) , “Electron backscatter diffraction and electron channeling contrast imaging of tilt and dislocations in nitride thin films”, C. Trager-Cowan, F. Sweeney, P. W. Trimby, A. P. Day, A. Gholinia, N.-H. Schmidt, P. J. Parbrook, A. J. Wilkinson, and I. M. WatsonIn this paper we describe the use of electron backscatter diffraction (EBSD) mapping and electron channeling contrast imaging—in the scanning electron microscope—to study tilt, atomic steps and dislocations in epitaxial GaN thin films. We show results from a series of GaN thin films of... (Read more)
- 6. Phys. Rev. B 75, 075306 (2007) , “Microcrack-induced strain relief in GaN/AlN quantum dots grown on Si(111)”, G. Sarusi, O. Moshe, S. Khatsevich, D. H. Rich, and B. DamilanoThe optical properties of vertically stacked self-assembled GaN/AlN quantum dots (QD's) grown on Si substrates were studied by means of temporally and spatially resolved cathodoluminescence (CL). An analysis of the CL spectra, thermal activation energies, and measured decay times of the QD... (Read more)
- 7. Phys. Rev. B 75, 035309 (2007) , “Role of hydrogen in hydrogen-induced layer exfoliation of germanium”, J. M. Zahler, A. Fontcuberta i Morral, M. J. Griggs, Harry A. Atwater, and Y. J. ChabalThe role of hydrogen in the exfoliation of Ge is studied using cross-sectional transmission electron microscopy, atomic force microscopy, and multiple-internal transmission mode Fourier-transform infrared absorption spectroscopy and compared with the mechanism in silicon. A qualitative model for the... (Read more)
- 8. Phys. Rev. Lett. 98, 075503 (2007) , “Pseudoclimb and Dislocation Dynamics in Superplastic Nanotubes”, Feng Ding, Kun Jiao, Mingqi Wu, and Boris I. YakobsonPlastic relaxation of carbon nanotubes under tension and at high temperature is described in terms of dislocation theory and with atomistic computer simulations. It is shown how the glide of pentagon-heptagon defects and a particular type of their pseudoclimb, with the atoms directly breaking out of... (Read more)
- 9. Appl. Phys. Lett. 89, 161904 (2006) , “Evidences of an intermediate rodlike defect during the transformation of {113} defects into dislocation loops”, S. Boninelli, N. Cherkashin, A. Claverie, and F. CristianoA detailed study of the transformation of the {113} defects into dislocation loops has been carried out in Ge preamorphized silicon (30 keV, 1×1015 Ge+/cm2) and annealed at 800 °C for time ranging from 15 to 2700 s. The presence of a stable defect,... (Read more)
- 10. Appl. Phys. Lett. 89, 151918 (2006) , “Competition between damage buildup and dynamic annealing in ion implantation into Ge”, M. Posselt, L. Bischoff, D. Grambole, and F. HerrmannChanneling implantation of Ga into Ge is performed at two very different ion fluxes (1012 and 1019 cm2 s1), at two temperatures (room temperature and 250 °C), and at five different fluences. The fluence dependence of the range profiles... (Read more)
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