Showing
10, 25, 50, 100, 500, 1000, all papers per page.
Sort by:
last publication date,
older publication date,
last update date.
- 1. Appl. Phys. Lett. 90, 011905 (2007) , “Dislocation junctions as barriers to threading dislocation migration”, Siu Sin Quek, Zhaoxuan Wu, Yong-Wei Zhang, Yang Xiang, and David J. SrolovitzLevel set simulations of dislocation dynamics in biaxially strained, heteroepitaxial films reveal interesting kinetic and thermodynamic mechanisms for blocking the migration of threading dislocations. Two dislocations on the same or on intersecting slip planes may react to form a threading... (Read more)
- 2. J. Appl. Phys. 101, 023516 (2007) , “Effect of screw dislocation density on optical properties in n-type wurtzite GaN”, Jeong Ho You and H. T. JohnsonThe effect of open-core screw dislocations on photoluminescence in n-doped wurtzite GaN epilayer is studied computationally and compared with experimental data. A k•p Hamiltonian calculation domain is set up to contain a dipole of open-core screw dislocations, and its size... (Read more)
- 3. Phys. Rev. B 75, 144108 (2007) , “Interaction mechanism between edge dislocations and asymmetrical tilt grain boundaries investigated via quasicontinuum simulations”, T. Shimokawa, T. Kinari, and S. ShintakuThe interactions between edge dislocations and grain boundaries—dislocation pileup, dislocation absorption, and dislocation transmission—are studied by performing quasicontinuum simulations. The 112 asymmetrical tilt grain boundaries with different misorientation angles are used. The... (Read more)
- 4. Phys. Rev. B 75, 134106 (2007) , “Exact linear response of reacting thermal defects driven by creation processes”, C. P. FlynnThe exact, linear response at steady state is calculated for reacting, but otherwise noninteracting, thermal defects driven by defect creation processes. The theory applies to vacancies and interstitials in the bulk, or to adatoms and advacancies on surface terraces. A wide variety of possible... (Read more)
- 5. Phys. Rev. B 75, 115201 (2007) , “Atomistic modeling of the (a+c)-mixed dislocation core in wurtzite GaN”, I. Belabbas, A. Béré, J. Chen, S. Petit, M. Akli Belkhir, P. Ruterana, and G. NouetAn atomistic simulation of the threading (a+c)-mixed dislocation core in wurtzite GaN has been carried out. Starting from models generated in the framework of continuum elasticity theory, two core configurations are obtained independently by using an empirical potential and a... (Read more)
- 6. Phys. Rev. B 75, 085301 (2007) , “Electron backscatter diffraction and electron channeling contrast imaging of tilt and dislocations in nitride thin films”, C. Trager-Cowan, F. Sweeney, P. W. Trimby, A. P. Day, A. Gholinia, N.-H. Schmidt, P. J. Parbrook, A. J. Wilkinson, and I. M. WatsonIn this paper we describe the use of electron backscatter diffraction (EBSD) mapping and electron channeling contrast imaging—in the scanning electron microscope—to study tilt, atomic steps and dislocations in epitaxial GaN thin films. We show results from a series of GaN thin films of... (Read more)
- 7. Phys. Rev. Lett. 98, 185501 (2007) , “Enhanced Ductile Behavior of Tensile-Elongated Individual Double-Walled and Triple-Walled Carbon Nanotubes at High Temperatures”, J. Y. Huang, S. Chen, Z. F. Ren, Z. Wang, K. Kempa, M. J. Naughton, G. Chen, and M. S. DresselhausWe report exceptional ductile behavior in individual double-walled and triple-walled carbon nanotubes at temperatures above 2000 °C, with tensile elongation of 190% and diameter reduction of 90%, during in situ tensile-loading experiments conducted inside a high-resolution transmission... (Read more)
- 8. Phys. Rev. Lett. 98, 075503 (2007) , “Pseudoclimb and Dislocation Dynamics in Superplastic Nanotubes”, Feng Ding, Kun Jiao, Mingqi Wu, and Boris I. YakobsonPlastic relaxation of carbon nanotubes under tension and at high temperature is described in terms of dislocation theory and with atomistic computer simulations. It is shown how the glide of pentagon-heptagon defects and a particular type of their pseudoclimb, with the atoms directly breaking out of... (Read more)
- 9. Appl. Phys. Lett. 89, 231906 (2006) , “Threading dislocation reduction by SiGeC domains in SiGe/SiGeC heterostructure: Role of pure edge dislocations”, L. H. Wong, C. Ferraris, C. C. Wong, and J. P. LiuThe authors previously reported an unusual phenomenon of strain relaxation accompanied by a reduction in threading dislocation density (TDD) on a Si0.77Ge0.23 layer grown on top of alternating layers of... (Read more)
- 10. Appl. Phys. Lett. 89, 201911 (2006) , “Generation of misfit dislocations by basal-plane slip in InGaN/GaN heterostructures”, R. Liu, J. Mei, S. Srinivasan, F. A. Ponce, H. Omiya, Y. Narukawa, and T. MukaiThe authors have observed that for InxGa1−xN epitaxial layers grown on bulk GaN substrates exhibit slip on the basal plane, when in the presence of free surfaces that intercept the heterointerface and for indium compositions x0.07. This leads to... (Read more)
- 11. Appl. Phys. Lett. 89, 161905 (2006) , “Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence”, N. Pauc, M. R. Phillips, V. Aimez, and D. DrouinThe authors present a low voltage cathodoluminescence (CL) study of as grown GaN and GaN:Si epilayers on sapphire. At 1 kV they resolve individual threading dislocations on the sample surface at low temperature (5 K), which appear as correlated dark spots. Analysis of CL intensity profiles across... (Read more)
- 12. Appl. Phys. Lett. 89, 161904 (2006) , “Evidences of an intermediate rodlike defect during the transformation of {113} defects into dislocation loops”, S. Boninelli, N. Cherkashin, A. Claverie, and F. CristianoA detailed study of the transformation of the {113} defects into dislocation loops has been carried out in Ge preamorphized silicon (30 keV, 1×1015 Ge+/cm2) and annealed at 800 °C for time ranging from 15 to 2700 s. The presence of a stable defect,... (Read more)
- 13. Appl. Phys. Lett. 89, 151923 (2006) , “Variable core model and the Peierls stress for the mixed (screw-edge) dislocation”, Vlado A. Lubarda and Xanthippi MarkenscoffA variable core model of a moving crystal dislocation is proposed and used to derive an expression for the Peierls stress. The dislocation width varies periodically as a dislocation moves through the lattice, which leads to an expression for the Peierls stress in terms of the difference of the total... (Read more)
- 14. Appl. Phys. Lett. 89, 112106 (2006) , “Effects of edge dislocations and intentional Si doping on the electron mobility of n-type GaN films”, D. G. Zhao, Hui Yang, J. J. Zhu, D. S. Jiang, Z. S. Liu, S. M. Zhang, Y. T. Wang, and J. W. LiangThe effects of dislocations and Si doping on the electrical properties of n-type GaN grown by metal organic chemical vapor deposition (MOCVD) are investigated. It is found that both electron mobility and carrier concentration are strongly influenced by edge dislocations. A moderate Si doping... (Read more)
- 15. Appl. Phys. Lett. 89, 092123 (2006) , “Accurate dependence of gallium nitride thermal conductivity on dislocation density”, C. Mion, J. F. Muth, E. A. Preble, and D. HanserThe authors experimentally find that the thermal conductivity of gallium nitride depends critically on dislocation density using the 3-omega technique. For GaN with dislocation densities lower than 106 cm2, the thermal conductivity is independent with dislocation... (Read more)
- 16. Appl. Phys. Lett. 89, 042102 (2006) , “Metal precipitation at grain boundaries in silicon: Dependence on grain boundary character and dislocation decoration”, T. Buonassisi, A. A. Istratov, M. D. Pickett, M. A. Marcus, T. F. Ciszek, and E. R. WeberSynchrotron-based analytical microprobe techniques, electron backscatter diffraction, and defect etching are combined to determine the dependence of metal silicide precipitate formation on grain boundary character and microstructure in multicrystalline silicon (mc-Si). Metal silicide precipitate... (Read more)
- 17. Appl. Phys. Lett. 88, 252109 (2006) , “Origin of the n-type conductivity of InN: The role of positively charged dislocations”, L. F. J. Piper, T. D. Veal, C. F. McConville, Hai Lu, and W. J. SchaffAs-grown InN is known to exhibit high unintentional n-type conductivity. Hall measurements from a range of high-quality single-crystalline epitaxially grown InN films reveal a dramatic reduction in the electron density (from low 1019 to low 1017 cm3)... (Read more)
- 18. Appl. Phys. Lett. 88, 211910 (2006) , “Optical properties of shuffle dislocations in silicon”, S. Pizzini, S. Binetti, A. Le Donne, A. Marzegalli, J. RabierThe radiative recombination processes in dislocated float zone silicon samples deformed under gigapascal stresses were studied by photoluminescence (PL) spectroscopy. The observed shuffle dislocations present a reconstructed core and their generation is accompanied by the introduction of point... (Read more)
- 19. Appl. Phys. Lett. 88, 082113 (2006) , “Effect of charge on the movement of dislocations in SiC”, T. A. G. Eberlein, R. Jones, A. T. Blumenau, S. Öberg, P. R. BriddonSiC bipolar devices show a degradation under forward-biased operation which has been linked with a current induced motion of one of the two glide dislocations having either Si or C core atoms. We have carried out calculations of the core structures and dynamics of partial dislocations in 3C and... (Read more)
- 20. Appl. Phys. Lett. 88, 073112 (2006) , “Single-electron tunneling in a silicon-on-insulator layer embedding an artificial dislocation network”, Yasuhiko Ishikawa, Chihiro Yamamoto, and Michiharu TabeA two-dimensional dislocation network artificially embedded in a silicon-on-insulator (SOI) layer was examined as the source of lattice strain to generate a periodic potential. A screw dislocation network with the period of 20 nm was formed in an SOI layer using a twist bonding of two SOI wafers.... (Read more)
- 21. J. Appl. Phys. 100, 094903 (2006) , “Effect of dislocations on electrical and electron transport properties of InN thin films. II. Density and mobility of the carriers”, V. Lebedev, V. Cimalla, T. Baumann, O. Ambacher, F. M. Morales, J. G. Lozano, and D. González.The influence of dislocations on electron transport properties of undoped InN thin films grown by molecular-beam epitaxy on AlN(0001) pseudosubstrates is reported. The microstructure and the electron transport in InN(0001) films of varying thickness were analyzed by transmission electron microscopy... (Read more)
- 22. J. Appl. Phys. 100, 094902 (2006) , “Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network”, V. Lebedev, V. Cimalla, J. Pezoldt, M. Himmerlich, S. Krischok, J. A. Schaefer, O. Ambacher, F. M. Morales, J. G. Lozano, and D. GonzálezThe strain-relaxation phenomena and the formation of a dislocation network in 2H-InN epilayers during molecular beam epitaxy are reported. Plastic and elastic strain relaxations were studied by reflection high-energy electron diffraction, transmission electron microscopy, and high resolution... (Read more)
- 23. J. Appl. Phys. 100, 093708 (2006) , “Effect of dislocations on open circuit voltage in crystalline silicon solar cells”, Thomas Kieliba, Stephan Riepe, and Wilhelm WartaThe dislocation dependence of open circuit voltage is studied based on Donolato's model for the effect of dislocations on minority carrier effective diffusion length [J. Appl. Phys. 84, 2656 (1998)]. Experimental data measured on thin-film solar cells show a strong decrease of open circuit... (Read more)
- 24. J. Appl. Phys. 100, 063706 (2006) , “Effect of dislocations on minority carrier diffusion length in practical silicon solar cells”, Thomas Kieliba, Stephan Riepe, and Wilhelm WartaIn 1998, Donolato presented an analytical model describing the effect of dislocation density on minority carrier effective diffusion length [J. Appl. Phys. 84, 2656 (1998)]. While this analysis was derived for a "semi-infinite" specimen, our objective is the appropriate description... (Read more)
- 25. J. Appl. Phys. 100, 053521 (2006) , “Ostwald ripening of interstitial-type dislocation loops in 4H-silicon carbide”, P. O. Å. Persson, L. Hultman, M. S. Janson, and A. HallénThe annealing behavior of interstitial-type basal plane dislocation loops in Al ion implanted 4H-SiC is investigated. It is shown that the loops undergo a dynamical ripening process. For annealing below 1700 °C the total area of dislocation loops increases, indicating that point defects... (Read more)
Showing
10, 25, 50, 100, 500, 1000, all papers per page.
Sort by:
last publication date,
older publication date,
last update date.
All papers (3399)
Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
(view as: tree
,
cloud
)
1329 | untagged |
Materials
(111 tags)
Others(101 tags)
Technique
(46 tags)
Details
(591 tags)
Bond(35 tags)
Defect(interstitial)(18 tags)
Defect(vacancy)(15 tags)
Defect-type(19 tags)
Element(65 tags)
Energy(8 tags)
Isotope(56 tags)
Label(303 tags)
Sample(17 tags)
Spin(8 tags)
Symmetry(15 tags)