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- 1. Appl. Phys. Lett. 93, 113504 (2008) , “Voltage polarity dependent low-power and high-speed resistance switching in CoO resistance random access memory with Ta electrode”, Hisashi Shima, Fumiyoshi Takano, Hidenobu Muramatsu, Hiro Akinaga, Yukio Tamai, Isao H. Inque, and Hidenori Takagi,Structural and resistance switching properties were investigated in the CoO resistance random access memory (RRAM) with the Ta electrode. The intermediate layer consisting of Co and Ta oxides was confirmed at the interface by the transmission electron microscopy and electron energy loss... (Read more)
- 2. J. Appl. Phys. 104, 014106 (2008) , “Analysis of electrically biased paramagnetic defect centers in HfO2 and HfxSi1−xO2 / (100)Si interfaces”, P. T. Chen, B. B. Triplett, J. J. Chambers, L. Colombo, P. C. McIntyre, and Y. NishiThis study reports on the first experimental observations of electrically biased paramagnetic defects at 800 °C N2 annealed HfxSi1−xO2 (x=0.4, and 0.6)/(100)Si and HfO2/(100)Si interfaces in metal oxide silicon... (Read more)
- 3. Appl. Phys. Lett. 90, 123502 (2007) , “Observation of negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination”,The authors combine metal oxide semiconductor (MOS) gated diode measurements and very sensitive electrically detected electron spin resonance measurements to detect and identify negative bias temperature instability (NBTI) generated defect centers in fully processed HfO2 pMOS field effect... (Read more)
- 4. Appl. Phys. Lett. 90, 073507 (2007) , “Fermi-level pinning at polycrystalline silicon-HfO2 interface as a source of drain and gate current 1/f noise”, P. Magnone, F. Crupi, L. Pantisano, and C. PaceThe impact of a submonolayer of HfO2 sandwiched between the SiON gate dielectric and the polycrystalline silicon layer on the low frequency noise of a n-channel metal oxide semiconductor field effect transistor is investigated. Fermi-level pinning at polycrystalline... (Read more)
- 5. Appl. Phys. Lett. 90, 052901 (2007) , “Process-dependent defects in Si/HfO2/Mo gate oxide heterostructures”, S. Walsh, L. Fang, J. K. Schaeffer, E. Weisbrod, and L. J. BrillsonThe authors have used low energy electron-excited nanoscale-depth-resolved spectroscopy to probe the bulk and interface defect states of ultrathin Mo/HfO2/Si with conventional process sequences. Multiple deep level emissions are evident below the 5.9 eV HfO2 near band edge,... (Read more)
- 6. Appl. Phys. Lett. 90, 042105 (2007) , “Stress induced leakage current mechanism in thin Hf-silicate layers”, A. Paskaleva, M. Lemberger, and A. J. BauerStress induced leakage current (SILC) in thin Hf-silicate layers and the mechanisms of its creation are examined. A very strong polarity and thickness dependence as well as partial recovery of SILC are observed. It is suggested that the trapping in preexisting sites influences SILC by two ways: (1)... (Read more)
- 7. Appl. Phys. Lett. 90, 032906 (2007) , “Large scale ab initio molecular dynamics simulations of hydrogen-induced degradation of Ta diffusion barriers in ultralow-k dielectric systems”, Ling Dai, V. B. C. Tan, Shuo-Wang Yang, Ping Wu, and Xian-Tong ChenIn ultralow-k dielectric systems, the porous dielectrics are normally sealed by a SiC film before the deposition of a Ta diffusion barrier layer. However, the Ta barrier effects are negated when the SiC films are fabricated by plasma-enhanced chemical vapor deposition (PECVD). Through large... (Read more)
- 8. J. Appl. Phys. 101, 024101 (2007) , “Defect states in the high-dielectric-constant gate oxide HfSiO4”, K. Xiong, Y. Du, K. Tse, and J. RobertsonHafnium silicate has a high dielectric constant and is a leading candidate to act as a gate dielectric. The defect energy levels have been calculated. The oxygen vacancy is found to give rise to Si-like levels which lie within the band gap of Si. The vacancy states are very localized and are... (Read more)
- 9. J. Appl. Phys. 101, 013703 (2007) , “Electron spin resonance study of as-deposited and annealed (HfO2)x(SiO2)1−x high-κ dielectrics on Si”, B. B. Triplett, P. T. Chen, Y. Nishi, P. H. Kasai, J. J. Chambers, and L. ColomboElectron spin resonance measurements on 4 and 40 nm thick (HfO2)0.6(SiO2)0.4 and (HfO2)0.4(SiO2)0.6 high-κ films on (100)Si wafers detected Pb0 and Pb1... (Read more)
- 10. Phys. Rev. B 75, 144102 (2007) , “Theoretical investigation of nitrogen substitution in cubic zirconia”, Thomas BredowNitrogen substitution of oxygen ions in cubic zirconia was studied theoretically at density functional level. Nitrogen contents of 12.5 and 3.1% were studied with Zr8O16−mN2 and Zr32O64−mN2 supercells. For... (Read more)
- 11. Phys. Rev. Lett. 98, 196101 (2007) , “Oxygen Vacancies in High Dielectric Constant Oxide-Semiconductor Films”, Supratik Guha and Vijay NarayananWe provide evidence that the oxygen vacancy is a dominant intrinsic electronic defect in nanometer scaled hafnium oxide dielectric films on silicon, relevant to microelectronics technology. We demonstrate this by developing a general model for the kinetics of oxygen vacancy formation in... (Read more)
- 12. Phys. Rev. Lett. 98, 026101 (2007) , “Bonding at the SiC-SiO2 Interface and the Effects of Nitrogen and Hydrogen”, Sanwu Wang, S. Dhar, Shu-rui Wang, A. C. Ahyi, A. Franceschetti, J. R. Williams, L. C. Feldman,, and Sokrates T. PantelidesUnlike the Si-SiO2 interface, the SiC-SiO2 interface has large defect densities. Though nitridation has been shown to reduce the defect density, the effect of H remains an open issue. Here we combine experimental data and the results of first-principles calculations to... (Read more)
- 13. Appl. Phys. Lett. 89, 222103 (2006) , “Comparison of near-interface traps in Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC structures”, Marc Avice, Ulrike Grossner, Ioana Pintilie, Bengt G. Svensson, Ola Nilsen, and Helmer FjellvagAluminum oxide (Al2O3) has been grown by atomic layer deposition on n-type 4H-SiC with and without a thin silicon dioxide (SiO2) intermediate layer. By means of capacitance-voltage and thermal dielectric relaxation current measurements, the interface... (Read more)
- 14. Appl. Phys. Lett. 89, 222101 (2006) , “Reversible creation and annihilation of a local leakage path in HfO2/GeOx stacked gate dielectrics: A direct observation by ultrahigh vacuum conducting atomic force microscopy”, K. Yamamura, K. Kita, A. Toriumi, and K. KyunoBy direct observation using ultrahigh vacuum conducting atomic force microscopy, it is found that a local leakage path in HfO2/GeOx stacks created by an electrical stress with a positive tip bias annihilates after applying a reverse tip bias. The creation and... (Read more)
- 15. Appl. Phys. Lett. 89, 202904 (2006) , “Effects of O vacancies and C doping on dielectric properties of ZrO2: A first-principles study”, Gargi Dutta, K. P. S. S. Hembram, G. Mohan Rao, and Umesh V. WaghmareThe authors determine electronic properties, structural stability, and dielectric response of zirconia (ZrO2) with oxygen vacancies (O vacancies) and carbon doping (C doping) using first-principles density functional theory calculations based on pseudopotentials and a plane wave basis.... (Read more)
- 16. Appl. Phys. Lett. 89, 152910 (2006) , “Characterization of atomic-layer-deposited Al2O3/GaAs interface improved by NH3 plasma pretreatment”, Hong-Liang Lu, Liang Sun, Shi-Jin Ding, Min Xu, David Wei Zhang, and Li-Kang WangAl2O3 thin films were deposited by atomic layer deposition on HF-cleaned and NH3 plasma-treated GaAs surfaces, respectively. The precursors used for Al2O3 films are trimethylaluminum and water. Effects of NH3 plasma pretreatment on... (Read more)
- 17. Appl. Phys. Lett. 89, 152904 (2006) , “First principles calculations of oxygen vacancy passivation by fluorine in hafnium oxide”, Wei Chen, Qing-Qing Sun, Shi-Jin Ding, David Wei Zhang, and Li-Kang WangThe fluorine incorporation into HfO2 with oxygen vacancies has been investigated using first principles calculations. The authors show that atomic fluorine can efficiently passivate the neutral oxygen vacancy with excess energies of 4.98 and 4.39 eV for threefold- and... (Read more)
- 18. Appl. Phys. Lett. 89, 142914 (2006) , “Defect passivation in HfO2 gate oxide by fluorine”, K. Tse and J. RobertsonThe authors have calculated that fluorine substituting for oxygen gives no gap states in HfO2. This accounts for the good passivation of oxygen vacancies by F seen experimentally. Bonding arguments are used to account for why F may be the most effective passivant in ionic oxides such as... (Read more)
- 19. Appl. Phys. Lett. 89, 142909 (2006) , “Fluorine passivation in poly-Si/TaN/HfO2 through ion implantation”, M. H. Zhang, F. Zhu, T. Lee, H. S. Kim, I. J. Ok, G. Thareja, L. Yu, and Jack C. LeeFluorine (F) passivation in poly-Si/TaN/HfO2/p-Si gate stacks through gate ion implantation has been studied. It has been found that when the TaN thickness was less than 15 nm, the mobility and subthreshold swing improved significantly in HfO2 n-channel... (Read more)
- 20. Appl. Phys. Lett. 89, 122112 (2006) , “Interface states for HfO2/Si structure observed by x-ray photoelectron spectroscopy measurements under bias”, Osamu Maida, Ken-ichi Fukayama, Masao Takahashi, Hikaru Kobayashi, Young-Bae Kim, Hyun-Chul Kim, and Duck-Kyun ChoiA 1.0 nm silicon nitride (SiN) layer can prevent reaction between HfO2 and Si completely. In this case, the interface state spectra obtained from x-ray photoelectron spectroscopy measurements under bias have two peaks above and below the midgap, attributable to Si dangling bonds... (Read more)
- 21. Appl. Phys. Lett. 89, 112903 (2006) , “Effect of impurities on the fixed charge of nanoscale HfO2 films grown by atomic layer deposition”, Raghavasimhan Sreenivasan, Paul C. McIntyre, Hyoungsub Kim, and Krishna C. SaraswatHfO2 films were grown by atomic layer deposition using two different precursor chemistriesHfCl4 and tetrakis(diethylamido)hafnium (TDEAH) with H2O as the oxidant. Electrical measurements on capacitor structures fabricated using the films showed a 0.4 V... (Read more)
- 22. Appl. Phys. Lett. 89, 112121 (2006) , “Nature and stability of the (100)Si/LaAlO3 interface probed by paramagnetic defects”, A. Stesmans, K. Clémer, V. V. Afanas'ev, L. F. Edge, and D. G. SchlomElectron spin resonance analysis of (100)Si/LaAlO3 structures reveals the absence of a Si/SiO2-type interface in terms of archetypal Si-dangling bond-type Si/SiO2 interface defects (Pb0,Pb1). With no... (Read more)
- 23. Appl. Phys. Lett. 89, 092902 (2006) , “Charge trapping in nitrided HfSiO gate dielectric layers”, G. Vellianitis, Z. M. Rittersma, and J. PétryThe effects of HfSiO nitridation on charge trapping and long-term dielectric reliability are investigated. A comparison between decoupled plasma nitridation, annealing in NH3, and no nitridation is made. It was found that thinner HfSiO layers show less trapped charge. Decoupled plasma... (Read more)
- 24. Appl. Phys. Lett. 89, 092120 (2006) , “Defect generation at SiO2/Si interfaces by low pressure chemical vapor deposition of silicon nitride”, Hao Jin, K. J. Weber, and P. J. SmithLow pressure chemical vapor deposition of Si3N4 on oxidized Si (111) surfaces causes a change in the properties of the dominant interface defect, the Pb center, observed by electron paramagnetic resonance. The change in the signature of the... (Read more)
- 25. Appl. Phys. Lett. 89, 082908 (2006) , “Negative oxygen vacancies in HfO2 as charge traps in high-k stacks”, J. L. Gavartin, D. Muñoz Ramo, A. L. Shluger, G. Bersuker, and B. H. LeeThe optical excitation and thermal ionization energies of oxygen vacancies in m-HfO2 are calculated using a non-local density functional theory with atomic basis sets and periodic supercell. The thermal ionization energies of negatively charged V and... (Read more)
- 26. Appl. Phys. Lett. 89, 053511 (2006) , “Density functional theory study of deep traps in silicon nitride memories”, Max Petersen and Yakov RoizinUsing density functional theory, the interaction of hydrogen with a nitrogen vacancy in -Si3N4 is investigated. A single H atom was found to be energetically favorable over non- and doubly protonated vacancies. The traps composed of excess silicon and hydrogen have negative... (Read more)
- 27. Appl. Phys. Lett. 89, 041918 (2006) , “Detection and mobility of hafnium in SiO2”, Dmitri O. Klenov, Thomas E. Mates, and Susanne StemmerHigh-angle annular dark-field imaging in scanning transmission electron microscopy and x-ray photoelectron spectroscopy were used to investigate thermal SiO2 layers doped with Hf by ion implantation. Hf was mobile under the focused electron beam in the as-implanted samples. After... (Read more)
- 28. Appl. Phys. Lett. 88, 193502 (2006) , “Role of oxygen vacancy in HfO2/SiHfO2/Si(100) interfaces”, D.-Y. Cho, S.-J. Oh, Y. J. Chang, T. W. Noh, R. Jung, J.-C. LeeWe have investigated the interface states in HfO2/SiO2/Si(100) systems that were prepared by using the in situ pulsed laser deposition technique. X-ray photoelectron spectroscopy data revealed that when the HfO2 film thickness exceeds 11 Å, the film... (Read more)
- 29. Appl. Phys. Lett. 88, 182903 (2006) , “Effects of Al addition on the native defects in hafnia”, Q. Li, K. M. Koo, W. M. Lau, P. F. Lee, J. Y. Dai, Z. F. Hou, X. G. GongTwo occupied native defect bands are experimentally detected in pure HfO2. The density of states of band one in the middle of the band gap reduces drastically with the Al addition, while that of band two slightly above the valence-band maximum remains rather unaffected. We attribute the... (Read more)
- 30. Appl. Phys. Lett. 88, 171912 (2006) , “Impact of nitridation on open volumes in HfSiOx studied using monoenergetic positron beams”, A. Uedono, K. Ikeuchi, T. Otsuka, K. Yamabe, K. Eguchi, M. Takayanagi, T. Ohdaira, M. Muramatsu, R. Suzuki, A. S. Hamid, T. ChikyowThe effects of nitridation on open volumes in thin HfSiOx films fabricated by metal-organic chemical vapor deposition were studied using monoenergetic positron beams. It was found that positrons were annihilated from the trapped state by open volumes that exist intrinsically in... (Read more)
- 31. Appl. Phys. Lett. 88, 162107 (2006) , “Physical origin of threshold voltage problems in polycrystalline silicon/HfO2 gate stacks”, Dae Yeon Kim, Joongoo Kang, and K. J. ChangBased on theoretical calculations, we find that at p+ polycrystalline silicon (poly-Si)/HfO2 gates, Si interstitials are easily migrated from the electrode, forming HfSi bonds with a charge transfer to the electrode, and the resulting interface dipole raises the Fermi level... (Read more)
- 32. Appl. Phys. Lett. 88, 092108 (2006) , “Hydrogen passivation of carbon Pb like centers at the 3C- and 4H-SiC/SiO2 interfaces in oxidized porous SiC”, J. L. Cantin, H. J. von Bardeleben, Yue Ke, R. P. Devaty, W. J. ChoykeThe effect of forming gas and vacuum annealing on the concentration of carbon dangling bond (PbC) centers at 3C- and 4H-SiC/SiO2 interfaces has been studied by electron paramagnetic resonance (EPR) spectroscopy. Our results show efficient passivation at 400 °C and... (Read more)
- 33. J. Appl. Phys. 100, 094108 (2006) , “The effect of interfacial layer properties on the performance of Hf-based gate stack devices”, G. Bersuker, C. S. Park, J. Barnett, P. S. Lysaght, P. D. Kirsch, C. D. Young, R. Choi, B. H. Lee, B. Foran, K. van Benthem, S. J. Pennycook, P. M. Lenahan, and J. T. RyanThe influence of Hf-based dielectrics on the underlying SiO2 interfacial layer (IL) in high-k gate stacks is investigated. An increase in the IL dielectric constant, which correlates to an increase of the positive fixed charge density in the IL, is found to depend on the starting,... (Read more)
- 34. J. Appl. Phys. 100, 083512 (2006) , “Spectroscopy and optically stimulated luminescence of Al2O3:C using time-resolved measurements”, E. G. Yukihara and S. W. S. McKeeverThis paper reports the observation of ultraviolet (UV) emission at 335 nm in the optically stimulated luminescence (OSL) of carbon-doped aluminum oxide (Al2O3:C) and presents results on the investigation of the OSL properties of this band, including its dose response, time... (Read more)
- 35. J. Appl. Phys. 100, 064501 (2006) , “Introduction of defects into HfO2 gate dielectrics by metal-gate deposition studied using x-ray photoelectron spectroscopy and positron annihilation”, A. Uedono, T. Naito, T. Otsuka, K. Shiraishi, K. Yamabe, S. Miyazaki, H. Watanabe, N. Umezawa, T. Chikyow, Y. Akasaka, S. Kamiyama, Y. Nara, and K. YamadaThe impact of TiN deposition on thin HfO2 films formed on Si substrates was studied using x-ray photoelectron spectroscopy and a monoenergetic positron beam. For the predeposition sample, the positrons implanted into Si were found to diffuse toward the HfO2/Si interface under... (Read more)
- 36. J. Appl. Phys. 100, 063517 (2006) , “Extraction of Cu diffusivities in dielectric materials by numerical calculation and capacitance-voltage measurement”, Ki-Su Kim, Young-Chang Joo, Ki-Bum Kim, and Jang-Yeon KwonA rigorous method of obtaining the Cu diffusivities in various SiO2-based dielectric materials is proposed. The diffusion profile of Cu ions in a dielectric material is first simulated and the resulting flatband voltage shift (VFB) is compared with the experimental... (Read more)
- 37. J. Appl. Phys. 100, 033517 (2006) , “Sources of optical absorption between 5.7 and 5.9 eV in silica implanted with Si or O”, R. H. Magruder, III, A. Stesmans, K. Clémer, R. A. Weeks, and R. A. WellerTo determine if the only source of optical absorption between 5.8 and 5.9 eV is the E center (absorbing at 5.85 eV) two separate suites of type III silica samples were implanted, one with Si and one with O. Several ion energies were used for implantation to produce layers 600 and... (Read more)
- 38. J. Appl. Phys. 99, 054507 (2006) , “Characterization of HfSiON gate dielectrics using monoenergetic positron beams”, A. Uedono, K. Ikeuchi, T. Otsuka, K. Shiraishi, K. Yamabe, S. Miyazaki, N. Umezawa, A. Hamid, T. Chikyow, T. Ohdaira M. Muramatsu, R. Suzuki, S. Inumiya, S. Kamiyama, Y. Akasaka, Y. Nara, and K. YamadaThe impact of nitridation on open volumes in thin HfSiOx films fabricated on Si substrates by atomic layer deposition was studied using monoenergetic positron beams. For HfSiOx, positrons were found to annihilate from the trapped state due to open volumes which... (Read more)
- 39. J. Appl. Phys. 99, 044105 (2006) , “Passivation of oxygen vacancy states in HfO2 by nitrogen”, K. Xiong, J. Robertson, and S. J. ClarkNitrogen is known to reduce leakage currents and charge trapping in high-dielectric-constant gate oxides such as HfO2. We show that this occurs because nitrogen, substituting for oxygen atoms next to oxygen vacancy sites, repels the occupied gap states due to the neutral and positively... (Read more)
- 40. Jpn. J. Appl. Phys. 45, L991 (2006) , “Lowering the Switching Current of Resistance Random Access Memory Using a Hetero Junction Structure Consisting of Transition Metal Oxides”, Kentaro Kinoshita, Tetsuro Tamura, Masaki Aoki, Yoshihiro Sugiyama and Hitoshi TanakaBoth lowering the “reset” current of resistance random access memory (ReRAM) and raising the resistance in the low resistance state are crucial for practical use of ReRAM. These requirements have been satisfied by using a hetero junction structure consisting of transition metal oxides, NiOy/TiOx/Pt, combining direct contact with the NiOy using a W-probe. It is considered that this configuration brought about extreme downsizing of the effective area of both the top and bottom electrodes for NiOy and thus decreased the number of filaments formed in “forming” process. Reducing the number of filaments is essential to these issues. (Read more)
- 41. Microelectron. Reliability 46, 1 (2006) , “NBTI degradation: From physical mechanisms to modelling”,An overview of the evolution of transistor parameters under negative bias temperature instability stress conditions commonly observed in p-MOSFETs in recent technologies is presented. The physical mechanisms of the degradation as well as the different defects involved have been discussed according to a systematic set of experiments with different stress conditions. According to our findings, a physical model is proposed which could be used to more accurately predict the transistor degradation. Finally, based on our new present understanding, a new characterization methodology is proposed, which would open the way to a more accurate determination of parameter shifts and thus allowing implementing the degradation into design rules. (Read more)
- 42. Phys. Rev. B 74, 205428 (2006) , “Er site in Er-implanted Si nanoclusters embedded in SiO2”, C. Maurizio, F. Iacona, F. D'Acapito, G. Franzò, and F. PrioloWe have investigated by extended x-ray absorption fine structure spectroscopy the local order around Er atoms introduced by ion implantation in substoichiometric silica films prepared by plasma enhanced chemical vapor deposition, where Si nanoclusters have been formed by different preimplantation... (Read more)
- 43. Phys. Rev. B 74, 125203 (2006) , “Density functional theory of structural transformations of oxygen-deficient centers in amorphous silica during hole trapping: Structure and formation mechanism of the Egamma[prime]" align="middle"> center”, T. Uchino and T. YokoWe investigate the hole trapping process of a neutral oxygen vacancy in amorphous silicon dioxide (a-SiO2) using cluster calculations based on the density functional theory (DFT) method. We show that trapping a hole at a neutral oxygen vacancy leads to the formation of several... (Read more)
- 44. Phys. Rev. B 74, 024106 (2006) , “Oxygen-vacancy-related dielectric anomaly in CaCu3Ti4O12: Post-sintering annealing studies”, C. C. Wang and L. W. ZhangThe influence of post-sintering annealing on the dielectric properties of CaCu3Ti4O12 was investigated in the temperature range form 200 to 400 K. A dielectric peak featuring thermally activated Debye-like behavior was observed around 340 K (100 Hz). This peak... (Read more)
- 45. Phys. Rev. B 73, 073302 (2006) , “Origin of Pb1 center at SiO2/Si(100) interface: First-principles calculations”, K. Kato, T. Yamasaki, T. UdaBased on first-principles calculations, we studied the generation behavior of Pb centers at SiO2/Si interfaces, especially for Pb1 centers, under oxidation of Si(100) surfaces. Pb1 centers were found to be formed... (Read more)
- 46. Phys. Rev. Lett. 97, 135502 (2006) , “29Si Hyperfine Structure of the Eα Center in Amorphous Silicon Dioxide”, G. Buscarino, S. Agnello, and F. M. GelardiWe report a study by electron paramagnetic resonance on the Eα point defect in amorphous silicon dioxide (a-SiO2). Our experiments were performed on γ-ray irradiated oxygen-deficient materials and pointed out that the 29Si... (Read more)
- 47. Phys. Rev. Lett. 97, 016102 (2006) , “Scaling and Universality of Roughening in Thermal Oxidation of Si(001)”, Hiroo Omi, Hiroyuki Kageshima, and Masashi UematsuBy analyzing atomic force microscopy images, we derive a continuum equation that quantitatively explains the roughening at the Si(001)-SiO2 interface during thermal oxidation at the temperature at 1200 °C in an Ar atmosphere containing a small fraction of O2. We also show... (Read more)
- 48. Appl. Phys. Lett. 87, 261907 (2005) , “Verification of the O–Si–N complex in plasma-enhanced chemical vapor deposition silicon oxynitride films”, S. Naskar, S. D. Wolter, C. A. Bower, B. R. Stoner, J. T. GlassSilicon oxynitride films were deposited using a plasma-enhanced chemical vapor deposition process. The bond configurations of the constituent atoms in the deposited film were analyzed using x-ray photoelectron spectroscopy. Analysis of the Si 2p spectra showed the presence of... (Read more)
- 49. Appl. Phys. Lett. 87, 204106 (2005) , “Direct observation of the structure of defect centers involved in the negative bias temperature instability”, J. P. Campbell and P. M. LenahanWe utilize a very sensitive electron paramagnetic resonance technique called spin-dependent recombination to observe and identify defect centers generated by modest negative bias and moderately elevated temperatures in fully processed p-channel metal-oxide-silicon field-effect transistors.... (Read more)
- 50. Appl. Phys. Lett. 87, 062105 (2005) , “Negative-U property of oxygen vacancy in cubic HfO2”, Y. P. Feng, A. T. L. Lim, M. F. LiOxygen vacancy in cubic HfO2 was investigated using first-principles calculation based on density functional theory and generalized gradient approximation. Five different charge states (V++, V+, V0, V, and... (Read more)
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