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- 101. Phys. Rev. Lett. 65, 207 (1990) , “First Observation of Paramagnetic Nitrogen Dangling-Bond Centers in Silicon Nitride”, William L. Warren, P. M. Lenahan, and Sean E. CurryWe report the first definitive identification of nitrogen dangling bonds in silicon nitride. A computer analysis of 14N hyperfine parameters shows that the unpaired electron is strongly localized on the central nitrogen atom and that the unpaired electron’s wave function is almost... (Read more)
- 102. Appl. Surf. Sci. 39, 392 (1989) , “THE NATURE OF THE DOMINANT DEEP TRAP IN AMORPHOUS SILICON NITRIDE FILMS: EVIDENCE FOR A NEGATIVE CORRELATION ENERGY”, P. M. Lenahan and D. T. KrickJ. KanickiA recent study by Krick and coworkers provided the first direct evidence associating a specific point-defect with trapping phenomena in silicon nitride films. Krick and coworkers demonstrated that silicon “dangling bond” centers in silicon nitride films are electrically neutral when... (Read more)
- 103. IEEE Trans. Nucl. Sci. 36, 1800-1807 (1989) , “A spin dependent recombination study of radiation induced defects at and near the Si/SiO2 interface”, M. A. Jupina , P. M. Lenahan
- 104. Phys. Rev. B 39, 11183 (1989) , “Threshold energy for photogeneration of self-trapped excitons in SiO2”, Chihiro Itoh, Katsumi Tanimura, and Noriaki ItohThe excitation spectrum of the 2.8-eV luminescence band of crystalline SiO2 has been measured in a photon energy range between 6 and 14 eV at 77 K. We find that the onset of the 2.8-eV luminescence occurs at 8.3 eV, which is nearly equal to the fundamental optical absorption edge of... (Read more)
- 105. Phys. Rev. B 20, 1823 (1989) , “E? center in glassy SiO2: Microwave saturation properties and confirmation of the primary 29Si hyperfine structure”, David L. GriscomElectron-spin-resonance studies of a series of air-annealed samples of glassy SiO2 having various degrees of enrichment (or depletion) in the 29Si isotope have confirmed that a ?-ray-induced doublet of 420-G splitting is the 29Si hyperfine structure of the well-known... (Read more)
- 106. Semicond. Sci. Technol. 4, 1045-1060 (1989) , “Spin-dependent and localisation effects at Si/SiO2 device interfaces”, B. Henderson , M. Pepper , R. L. Vranch
- 107. J. Phys. C: Solid State Phys. 21, L431 (1988) , “The model of a triplet self-trapped exciton in crystalline SiO2”, A L ShlugerMaking use of the self-consistent quantum chemical calculations dealing with the many-electron models of a crystal with a defect, the author has shown that the triplet exciton self-trapping in crystalline SiO2 occurs due to the displacement by about 0.3 AA of an oxygen ion from a regular... (Read more)
- 108. J. Phys. C: Solid State Phys. 21, 1869 (1988) , “Transient optical absorption and luminescence induced by band-to-band excitation in amorphous SiO2”, K Tanimura, C Itoh and N ItohThe transient optical absorption and luminescence induced by irradiation of amorphous SiO2 with an electron pulse have been measured. It is found that the transient optical absorption spectra do not depend on impurities and have a strong peak at 5.3 eV and a satellite peak at 4.2 eV. The... (Read more)
- 109. J. Phys. C: Solid State Phys. 20, L367 (1987) , “Micro-emulsions in oil-water-surfactant mixtures: an Ising lattice gas model”, Kan Chen, C Ebner, C Jayaprakash and R PanditAn Ising lattice gas model is constructed for oil-water-surfactant mixtures. The phase diagram of this model is obtained by using mean-field theory and Monte Carlo simulations. The paramagnetic phase displays microstructures similar to those found in laboratory micro-emulsions. Also oil-rich,... (Read more)
- 110. J. Phys. C: Solid State Phys. 19, 6211 (1986) , “Charge-trapping properties of germanium in crystalline quartz”, W Hayes and T J L JenkinGermanium impurity in alpha -quartz as a well known deep electron trap and hence makes possible the study of hole trapping processes by EPR techniques. The authors have carried out an EPR study of SiO2:Ge X-irradiated in a microwave cavity at 4K and show that Ge is an amphoteric impurity... (Read more)
- 111. J. Appl. Phys. 57, 5176 (1985) , “Damage center formation in SiO2 thin films by fast electron irradiation”, R. L. PfefferThe concentrations of E centers (ESR-active oxygen vacancies) produced by 30160 keV electron irradiation have been measured in thermal SiO2 films at doses far exceeding any previously reported. The dependences of these concentrations on electron energy and fluence were... (Read more)
- 112. J. Phys. C: Solid State Phys. 17, 2943 (1984) , “ODMR of recombination centres in crystalline quartz”, W Hayes, M J Kane, O Salminen, R L Wood and S P DohertyThe well known 2.8 eV luminescence band in quartz has been studied using optically detected magnetic resonance (ODMR). A triplet state with a very large fine-structure splitting is found to contribute to the emission. The principle axes of the triplet are identified. The possibility that the... (Read more)
- 113. J. Phys. Soc. Jpn. 43, 1286 (1977) , “Phase Diagram of an Exciton in the Phonon Field ”, Atsuko SumiIt is shown that an electron and a hole interacting mutually through the Coulomb force in the acoustic-phonon field take, within the adiabatic approximation, four possible phases depending upon the coupling constants: the lowest state is the free exciton in phase[I], the large-radius self-trapped... (Read more)
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