Papers - tagged 'aggregate' - Defect dat@base
http://esrlab.jp/div-media/defect/index.php?q=&material=&method=&defect=aggregate&sb=u
Papers - Defect dat@base2009-11-09T15:25:52+09:00EPR study of defects in neutron-irradiated silicon: Quenched-in alignment under <110>-uniaxial stress
http://dx.doi.org/10.1103/PhysRevB.9.4351
Young-Hoon Lee and James W. Corbett, Phys. Rev. B 9, 4351-4361 (1974) 2009-11-09T15:25:52+09:00Identification of antisite carbon split-interstitial defects in 4H-SiC
http://dx.doi.org/10.1103/PhysRevB.77.195204
J. W. Steeds, W. Sullivan, Phys. Rev. B 77, 195204 (2008) 2008-05-22T00:01:06+09:00Structure and vibrational spectra of carbon clusters in SiC
http://dx.doi.org/10.1103/PhysRevB.70.235211
Alexander Mattausch, Michel Bockstedte, and Oleg Pankratov, Phys. Rev. B 70, 235211 (2004) 2008-01-02T21:52:41+09:00Role of Intermolecular Coupling in the Photophysics of Disordered Organic Semiconductors: Aggregate Emission in Regioregular Polythiophene
http://dx.doi.org/10.1103/PhysRevLett.98.206406
Jenny Clark, Carlos Silva, Richard H. Friend, and Frank C. Spano, Phys. Rev. Lett. 98, 206406 (2007) 2007-07-17T18:46:15+09:00Oxygen Vacancy Clustering and Electron Localization in Oxygen-Deficient SrTiO3: LDA+U Study
http://dx.doi.org/10.1103/PhysRevLett.98.115503
Do Duc Cuong, Bora Lee, Kyeong Mi Choi, Hyo-Shin Ahn, Seungwu Han, and Jaichan Lee, Phys. Rev. Lett. 98, 115503 (2007) 2007-07-16T00:30:03+09:00Stability of I3 complexes in III-V compound semiconductors by tight-binding molecular dynamics
http://dx.doi.org/10.1103/PhysRevB.75.115205
G. Zollo and F. Gala, Phys. Rev. B 75, 115205 (2007) 2007-07-13T00:49:25+09:00Lithium colloids and color center creation in electron-irradiated Li2NH observed by electron-spin resonance
http://dx.doi.org/10.1103/PhysRevB.74.174122
F. Beuneu, P. Vajda, Y. Nakamori, and S. Orimo, Phys. Rev. B 74, 174122 (2006) 2007-06-30T22:17:34+09:00Clustering of vacancy defects in high-purity semi-insulating SiC
http://dx.doi.org/10.1103/PhysRevB.75.085208
R. Aavikko, K. Saarinen, F. Tuomisto, B. Magnusson, N. T. Son, and E. Janzén, Phys. Rev. B 75, 085208 (2007) 2007-06-18T11:25:14+09:00Void growth during thermal decomposition of silicon oxide layers studied by low-energy electron microscopy
http://dx.doi.org/10.1063/1.2397283
H. Hibino, M. Uematsu, and Y. Watanabe, J. Appl. Phys. 100, 113519 (2006) 2006-12-22T19:30:52+09:00Theoretical study of nitrogen-doping effects on void formation processes in silicon crystal growth
http://dx.doi.org/10.1063/1.2375018
Hiroyuki Kageshima, Akihito Taguchi, and Kazumi Wada, J. Appl. Phys. 100, 113513 (2006) 2006-12-22T19:27:52+09:00Single-crystal silicon coimplanted by helium and hydrogen: Evolution of decorated vacancylike defects with thermal treatments
http://dx.doi.org/10.1103/PhysRevB.74.174120
C. Macchi, S. Mariazzi, G. P. Karwasz, R. S. Brusa, P. Folegati, S. Frabboni, and G. Ottaviani, Phys. Rev. B 74, 174120 (2006) 2006-12-14T14:57:47+09:00Critical size for defects in nanostructured materials
http://dx.doi.org/10.1063/1.2220472
Jagdish Narayan, J. Appl. Phys. 100, 034309 (2006) 2006-11-20T14:58:55+09:00Superscrew dislocations in silicon carbide: Dissociation, aggregation, and formation
http://dx.doi.org/10.1063/1.2187011
Xianyun Ma, J. Appl. Phys. 99, 063513 (2006) 2006-10-19T21:39:51+09:00Effects of temperature and flux on oxygen bubble formation in Li borosilicate glass under electron beam irradiation
http://dx.doi.org/10.1063/1.2189026
Nadège Ollier, Giancarlo Rizza, Bruno Boizot, and Guillaume Petite, J. Appl. Phys. 99, 073511 (2006) 2006-10-19T19:17:17+09:00Influence of metal trapping on the shape of cavities induced by high energy He+ implantation
http://dx.doi.org/10.1063/1.2173041
R. El Bouayadi, G. Regula, M. Lancin, B. Pichaud, and M. Desvignes, J. Appl. Phys. 99, 043509 (2006) 2006-10-05T15:16:22+09:00Oxygen Migration, Agglomeration, and Trapping: Key Factors for the Morphology of the Si-SiO2 Interface
http://dx.doi.org/10.1103/PhysRevLett.97.116101
L. Tsetseris and S. T. Pantelides, Phys. Rev. Lett. 97, 116101 (2006) 2006-09-28T11:22:46+09:00Diffusion and clustering of substitutional Mn in (Ga,Mn)As
http://dx.doi.org/10.1063/1.2219337
Hannes Raebiger, Maria Ganchenkova, and Juhani von Boehm, Appl. Phys. Lett. 89, 012505 (2006) 2006-08-31T17:20:12+09:00Vacancy clustering and diffusion in silicon: Kinetic lattice Monte Carlo simulations
http://dx.doi.org/10.1103/PhysRevB.74.045217
Benjamin P. Haley, Keith M. Beardmore, and Niels Grønbech-Jensen, Phys. Rev. B 74, 045217 (2006) 2006-08-31T16:58:50+09:00Mechanisms of arsenic clustering in silicon
http://dx.doi.org/10.1103/PhysRevB.74.035205
F. F. Komarov, O. I. Velichko, V. A. Dobrushkin, and A. M. Mironov, Phys. Rev. B 74, 035205 (2006) 2006-08-31T16:05:40+09:00Oxygen segregation to dislocations in GaN
http://dx.doi.org/10.1063/1.2136224
M. E. Hawkridge and D. Cherns, Appl. Phys. Lett. 87, 221903 (2005) 2006-08-17T14:02:35+09:00