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- 1. J. Appl. Phys. 101, 013707 (2007) , “Vanadium donor and acceptor levels in semi-insulating 4H- and 6H-SiC”, W. C. Mitchel, W. D. Mitchell, G. Landis, H. E. Smith, Wonwoo Lee, and M. E. ZvanutThe electronic levels of vanadium in semi-insulating 4H- and 6H-SiC have been reinvestigated using temperature dependent Hall effect and resistivity measurements at temperatures up to 1000 K in conjunction with electron paramagnetic resonance (EPR) and optical absorption measurements... (Read more)
- 2. Phys. Rev. B 75, 113310 (2007) , “Hole spin polarization in GaAs:Mn/AlAs multiple quantum wells”, V. F. Sapega, O. Brandt, M. Ramsteiner, K. H. Ploog, I. E. Panaiotti, and N. S. AverkievWe study the effect of confinement on the spin polarization of holes bound to Mn acceptors in paramagnetic GaAs:Mn/AlAs multiple quantum wells. It is demonstrated that the polarization of these bound holes is governed by the properties of the host material rather than by quantum confinement. The... (Read more)
- 3. Phys. Rev. B 75, 085416 (2007) , “Ab initio theoretical study of hydrogen and its interaction with boron acceptors and nitrogen donors in single-wall silicon carbide nanotubes”, A. GaliSilicon carbide nanotubes have a great potential for biological applications. It is of interest to explore the electronic properties of these nanotubes, and how those are modified in the presence of impurities. Hydrogen is a common impurity that can appear during the growth of silicon carbide... (Read more)
- 4. Phys. Rev. B 75, 033301 (2007) , “Microscopic evidence for evolution of superconductivity by effective carrier doping in boron-doped diamond: 11B-NMR study”, H. Mukuda, T. Tsuchida, A. Harada, Y. Kitaoka, T. Takenouchi, Y. Takano, M. Nagao, I. Sakaguchi, T. Oguchi, and H. KawaradaWe have investigated the superconductivity discovered in boron-doped diamonds by means of 11B-NMR on heteroepitaxially grown (111) and (100) films. 11B-NMR spectra for all of the films are identified to arise from the substitutional B(1) site as single occupation and lower... (Read more)
- 5. Phys. Rev. Lett. 98, 135506 (2007) , “Possible Approach to Overcome the Doping Asymmetry in Wideband Gap Semiconductors”, Yanfa Yan, Jingbo Li, Su-Huai Wei, and M. M. Al-JassimThe asymmetry doping problem has severely hindered the potential applications of many wideband gap (WBG) materials. Here, we propose a possible approach to overcome this long-standing doping asymmetry problem for WBG semiconductors. Our approach is based on the reduction of the ionization energies... (Read more)
- 6. Phys. Rev. Lett. 98, 096805 (2007) , “Observation of the Linear Stark Effect in a Single Acceptor in Si”, L. E. Calvet, R. G. Wheeler, and M. A. ReedThe Stark splitting of a single fourfold degenerate impurity located within the built-in potential of a metal-semiconductor contact is investigated using low temperature transport measurements. A model is developed and used to analyze transport as a function of temperature, bias voltage, and... (Read more)
- 7. Phys. Rev. Lett. 98, 045501 (2007) , “Dopability, Intrinsic Conductivity, and Nonstoichiometry of Transparent Conducting Oxides”, Stephan Lany and Alex ZungerExisting defect models for In2O3 and ZnO are inconclusive about the origin of conductivity, nonstoichiometry, and coloration. We apply systematic corrections to first-principles calculated formation energies ΔH, and validate our theoretical defect model against... (Read more)
- 8. Phys. Rev. Lett. 98, 015501 (2007) , “First-Principles Simulations of Boron Diffusion in Graphite”, I. Suarez-Martinez, A. A. El-Barbary, G. Savini, and M. I. HeggieBoron strongly modifies electronic and diffusion properties of graphite. We report the first ab initio study of boron interaction with the point defects in graphite, which includes structures, thermodynamics, and diffusion. A number of possible diffusion mechanisms of boron in graphite are... (Read more)
- 9. Appl. Phys. Lett. 89, 182110 (2006) , “Picosecond spin relaxation of acceptor-bound exciton in wurtzite GaN”, H. Otake, T. Kuroda, T. Fujita, T. Ushiyama, A. Tackeuchi, T. Chinone, J.-H. Liang, and M. KajikawaThe spin relaxation process of acceptor-bound excitons in wurtzite GaN is observed by spin-dependent pump and probe reflectance measurement with subpicosecond time resolution. The time evolutions measured at 15–50 K have a single exponential component corresponding to the electron spin... (Read more)
- 10. Appl. Phys. Lett. 89, 112107 (2006) , “Determination of the concentration of recombination centers in thin asymmetrical p-n junctions from capacitance transient spectroscopy”, Juan A. Jiménez Tejada, Pablo Lara Bullejos, Juan A. López Villanueva, Francisco M. Gómez-Campos, Salvador Rodríguez-Bolívar, and M. Jamal DeenRecombination centers in thin asymmetrical p-n junctions were analyzed in the context of capacitance transient experiments. The combined effect of the thin low-doped region of the junction and the nonzero value of the occupation factor of the recombination center in the depletion layer... (Read more)
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