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- 1. Solid State Commun. 57, 615-617 (1986) , “THE OPTICALLY DETECTED MAGNETIC RESONANCE OF DANGLING BONDS AT THE Si/SiO2 INTERFACE”, K. M. Lee, L. C. Kimerling, B. G. Bagley, W. E. QuinnThe optically detected magnetic resonance (ODMR) observation of dangling bonds at the Si/SiO2 interface (Pb centers) is reported in this Communication. A luminescence quenching signal is identified as arising from the Pb center through its axially symmetry g tensor along the <1 1 1#62;... (Read more)
- 2. Jpn. J. Appl. Phys. 10, 52-62 (1971) , “Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I”, Y. NishiThree kinds of paramagnetic centers named PA, PB and PC have been found in a silicon-silicon dioxide structure at liquid nitrogen temperature. PA (g=∼2.000, ΔH=∼4 Oe), and PB having anisotropic g-value... (Read more)
- 3. Semicond. Sci. Technol. 4, 1045-1060 (1989) , “Spin-dependent and localisation effects at Si/SiO2 device interfaces”, B. Henderson , M. Pepper , R. L. Vranch
- 4. Proc. symp. on the degradation od electronic devices due to device operation as well as crystalline and process-induced defects 94-1, 221-234 (1994) , ECS (ISBN:1-56677-037-8) , “Spin dependent recombination in Si p-n junctions”, B. K. Meyer , P. Christmann , W. Stadler, H. Overhof, J.-M. Spaeth, S. Greulich-Weber, B. Stich
- 5. Mater. Sci. Forum 83-87, 1165-1170 (1992) , “Spin dependent recombination at deep centers in Si - electrically detected magnetic resonance”, P. Christmann , M. Bernauer , C. Wetzel , A. Asenov , B. K. Meyer , A. Endros
- 6. Phys. Rev. Lett. 92, 105505 (2004) , “In situ ESR Observation of Interface Dangling Bond Formation Processes During Ultrathin SiO2 Growth on Si(111)”, W. Futako, N. Mizuochi, and S. YamasakiWe report the formation processes of interface dangling bonds (Pb centers) during initial oxidation of a clean Si(111) surface using an ultrahigh-vacuum electron-spin-resonance technique. At the oxidation of one or two Si layer(s), the Pb center... (Read more)
- 7. Phys. Rev. Lett. 87, 165506 (2001) , “Defect Generation by Hydrogen at the Si-SiO2 Interfaces”, S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, and S. T. PantelidesHydrogen is known to passivate Si dangling bonds at the Si-SiO 2 interface, but the subsequent arrival of H + at the interface causes depassivation of Si-H bonds. Here we report first-principles density functional calculations, showing that, contrary to conventional... (Read more)
- 8. Appl. Phys. Lett. 81, 1128-1130 (2002) , “Electron spin resonance study of interface defects in atomic layer deposited hafnium oxide on Si”, A. Y. Kang, P. M. Lenahan, J. F. Conley Jr., R. SolankiWe report electron spin resonance (ESR) observation of interface defects at the HfO2/(111)Si boundary for HfO2 films deposited via atomic layer chemical vapor deposition using Hf(NO3)4 as a precursor. We observe several signals, dominated by one due to a... (Read more)
- 9. J. Vac. Sci. Technol. B 16, 2134-2153 (1998) , “What can electron paramagnetic resonance tell us about the Si/SiO2 system?”, P. M. Lenahan, J. F. Conley, Jr.Electron paramagnetic resonance (EPR) measurements of Si/SiO2 systems began over 30 years ago. Most EPR studies of Si/SiO2 systems have dealt with two families of defects: Pb centers and E centers. Several variants from each group have... (Read more)BPSG PSG Si SiO2| EDMR EPR electric-field-effect electrical-meas. etching gamma-irradiation| 10B 11B 1H 29Si 2D 31P BOHC Boron Deuterium E' E'-delta H(I) Hydrogen Nb Nitrogen Oxygen P1 P2 P4 POHC Pb Pb0 Pb1 Phosphorus Silicon amorphous complex(=3) dangling-bond device dielectric interface pair(=2) | last update: Takahide Umeda
- 10. J. Non-Cryst. Solids 149, 137-160 (1992) , “Electron spin resonance characterization of self-trapped holes in amorphous silicon dioxide”, David L. GriscomThe electron spin resonance spectra of radiation-induced self-trapped holes (STHs) in amorphous silicon dioxide are isolated by isochromal annealing experiments and computer simulation analyses. Two distinct components, denoted STH1 and STH2 (plus a third component intermediate between the two),... (Read more)
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