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- 1. J. Appl. Phys. 102, 013530 (2007) , “Fluorine-vacancy complexes in Si-SiGe-Si structures”, D. A. Abdulmalik, P. G. Coleman, H. A. W. El Mubarek, and P. AshburnFluorine-vacancy (FV) complexes have been directly observed in the Si0.94Ge0.06 layer in a Si-SiGe-Si structure, using variable-energy positron annihilation spectroscopy (VEPAS). These complexes are linked to the significant reduction of boron diffusion in the SiGe layer via... (Read more)
- 2. Phys. Rev. B 75, 085423 (2007) , “Room-temperature atmospheric oxidation of Si nanocrystals after HF etching”, X. D. Pi, L. Mangolini, S. A. Campbell, and U. KortshagenThe effect of HF etching of the silicon oxide shell covering the surface of Si nanocrystals (NCs) on the subsequent room-temperature atmospheric oxidation of Si-NCs has been investigated by means of photoluminescence measurements, Fourier transform infrared spectroscopy, and electron paramagnetic... (Read more)
- 3. Appl. Phys. Lett. 89, 152904 (2006) , “First principles calculations of oxygen vacancy passivation by fluorine in hafnium oxide”, Wei Chen, Qing-Qing Sun, Shi-Jin Ding, David Wei Zhang, and Li-Kang WangThe fluorine incorporation into HfO2 with oxygen vacancies has been investigated using first principles calculations. The authors show that atomic fluorine can efficiently passivate the neutral oxygen vacancy with excess energies of 4.98 and 4.39 eV for threefold- and... (Read more)
- 4. Appl. Phys. Lett. 89, 142914 (2006) , “Defect passivation in HfO2 gate oxide by fluorine”, K. Tse and J. RobertsonThe authors have calculated that fluorine substituting for oxygen gives no gap states in HfO2. This accounts for the good passivation of oxygen vacancies by F seen experimentally. Bonding arguments are used to account for why F may be the most effective passivant in ionic oxides such as... (Read more)
- 5. Appl. Phys. Lett. 89, 142909 (2006) , “Fluorine passivation in poly-Si/TaN/HfO2 through ion implantation”, M. H. Zhang, F. Zhu, T. Lee, H. S. Kim, I. J. Ok, G. Thareja, L. Yu, and Jack C. LeeFluorine (F) passivation in poly-Si/TaN/HfO2/p-Si gate stacks through gate ion implantation has been studied. It has been found that when the TaN thickness was less than 15 nm, the mobility and subthreshold swing improved significantly in HfO2 n-channel... (Read more)
- 6. Appl. Phys. Lett. 89, 092113 (2006) , “Large fluorine-vacancy clusters in Si and their capture efficiency for self-interstitials”, Giorgia M. Lopez and Vincenzo FiorentiniBased on ab initio density-functional energetics for saturated (n=2m+2) fluorine-vacancy clusters FnVm for m up to 4, the authors set up a model showing that (a) fluorine-vacancy (FV) aggregates in Si can form in any... (Read more)
- 7. Appl. Phys. Lett. 89, 041908 (2006) , “Stress dependence of F+-center cathodoluminescence of sapphire”, Giuseppe Pezzotti, Keshu Wan, Maria Chiara Munisso, and Wenliang ZhuThe rate of spectral shift with applied biaxial stress [piezospectroscopic (PS) coefficient] was determined for the electron-stimulated F+ luminescence emitted from the c plane of sapphire (-Al2O3) as =1.18±0.03 nm/GPa. The PS dependence could be... (Read more)
- 8. J. Appl. Phys. 100, 023525 (2006) , “Evolution of erbium lattice locations in silicon: Effects of thermal annealing and codoped impurities (carbon, nitrogen, oxygen, and fluorine)”, X. T. Ren and M. B. HuangThe effects of thermal annealing and codoped impurities including carbon, nitrogen, oxygen, and fluorine, on the occupation of erbium lattice locations in Si, have been investigated in detail. Ion channeling measurements indicate that ion-implanted Er can mainly occupy two distinct lattice locations... (Read more)
- 9. J. Appl. Phys. 99, 103510 (2006) , “Fluorine in preamorphized Si: Point defect engineering and control of dopant diffusion”, G. Impellizzeri, S. Mirabella, F. Priolo, E. Napolitani, and A. CarneraWhile it is known that F modifies dopant diffusion in crystalline Si, the physical mechanisms behind this process are still unclear. In this work we report experimental studies about the F control of the point defect density in preamorphized Si layers. These studies put the basis for the... (Read more)
- 10. Phys. Rev. B 74, 174101 (2006) , “First-principles study of the intrinsic defects in PbFCl”, Bo Liu, Zeming Qi, and Chaoshu ShiFirst-principles pseudopotential calculations have been performed to investigate intrinsic defects including vacancies, interstitials, antisite defects, as well as Schottky and Frenkel defects in PbFCl crystals. For the isolated vacancies and interstitials, their formation energies are critically... (Read more)
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