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- 1. Appl. Phys. Lett. 87, 252118 (2005) , “"EL2" revisited: Observation of metastable and stable energy levels of EL2 in semi-insulating GaAs”, D. Kabiraj, S. GhoshBy using a combination of detailed experimental studies, we identify the metastable and stable energy levels of EL2 in semi-insulating GaAs. These results are discussed in light of the recently proposed models for EL2 in GaAs. ©2005 American Institute of Physics ... (Read more)
- 2. Physica B 308-310, 753-756 (2001) , “On the problem of the EL2 structure in semi-insulating GaAs: high-frequency ODEPR/ODENDOR measurements in W-band”, I. Tkach, K. Krambrock and J. -M. SpaethFor almost two decades the structure model of the EL2 defect in semi-insulating (SI) GaAs has been controversially discussed. Neither the isolated AsGa with Td symmetry, nor the AsGa–Asi pair model nor any other AsGa-related defect model could be unambiguously established. The reason was that... (Read more)
- 3. Jpn. J. Appl. Phys. 37, 1939-1944 (1999) , “Role of the EL2 Center on the Formation of Metastable Hydrogen-related Defects (M3/M4) in n-GaAs”, T. Shinagawa, T. OkumuraHydrogen-related metastable defects (M3/M4) in n-GaAs were studied in relation to the EL2 center. We found that the M3/M4 defects were observed only in the crystals containing the EL2 center in the as-grown state after exposure to a hydrogen plasma. The EL3 level, which was tentatively assigned as... (Read more)
- 4. Phys. Rev. Lett. 68, 1582 (1992) , “Breathing-Mode Relaxation Associated with Electron Emission and Capture Processes of EL2 in GaAs”, G. A. Samara, D. W. Vook, J. F. GibbonsAnalysis of the effects of hydrostatic pressure on the electronic emission and capture properties of the (0/+) and (+/++) deep levels of the EL2 defect in GaAs leads to the following conclusions: (1) Both levels move higher in the band gap with pressure; (2) relatively large inward (outward) lattice... (Read more)
- 5. Mater. Sci. Forum 83-87, 887 (1991) , “Defects in Semisonductors 16”, K. Krambrock, J.-M. Spaeth
- 6. Phys. Rev. Lett. 67, 112 (1991) , “Photoluminescence Studies of the EL2 Defect in Gallium Arsenide under External Perturbations”, M. K. Nissen, A. Villemaire, and M. L. W. ThewaltThe fine structure in the 0.61-eV photoluminescence band from the deep defect EL2 in semi-insulating GaAs has been studied under uniaxial stress and magnetic field. The results show no deviation from full Td symmetry and hence support the isolated-arsenic-antisite model of EL2.... (Read more)
- 7. Phys. Rev. Lett. 65, 2046 (1990) , “Anion-Antisite-like Defects in III-V Compounds”, M. J. Caldas, J. Dabrowski, A. Fazzio, and M. SchefflerWe report ab initio calculations of total energies and electronic structures of P, As, and Sb donors in GaAs and InP. In the Td geometry, all these defects exhibit two donor states in the forbidden gap: an internal optical excitation energy of the order of 1 eV, and a Franck-Condon shift... (Read more)
- 8. Phys. Rev. B 39, 5538 (1989) , “Unification of the properties of the EL2 defect in GaAs”, M. Hoinkis, E. R. Weber, W. Walukiewicz, J. Lagowski, M. Matsui, H. C. Gatos, B. K. Meyer, J. M. SpaethWe provide experimental unification of the properties of EL2 in GaAs, linking the measurements of optical absorption, deep-level transient spectroscopy, electron paramagnetic resonance (EPR), magnetic circular dichroism (MCD), optically detected electron-nuclear double resonance (ODENDOR). Results... (Read more)
- 9. Appl. Phys. Lett. 53, 959 (1988) , “Characterization of semi-insulating GaAs wafers by room-temperature EL2-related photoluminescence”, Michio TajimaDeep level photoluminescence (PL) associated with the dominant midgap donor EL2 in semi-insulating (SI) GaAs crystals has been observed for the first time at room temperature. A broad emission band with a peak at 0.65 eV was observed always in commercial undoped SI GaAs wafers. The association of... (Read more)
- 10. Appl. Phys. Lett. 52, 1689 (1988) , “Hole photoionization cross sections of EL2 in GaAs”, P. Silverberg, P. Omling, and L. SamuelsonThe spectral dependence of the hole photoionization cross section 0p" align="middle"> of EL2 in GaAs has been determined in absolute numbers at T=78 and 295 K. From simultaneous measurements of the electron photoionization cross section 0n" align="middle">,... (Read more)
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