Papers - tagged 'EH6/7' - Defect dat@base
http://esrlab.jp/div-media/defect/index.php?q=&material=&method=&defect=EH6%2F7&sb=u
Papers - Defect dat@base2006-03-14T19:11:27+09:00Stability of deep centers in 4H-SiC epitaxial layers during thermal annealing
http://dx.doi.org/10.1063/1.1790032
Y. Negoro, T. Kimoto, and H. Matsunami, Appl. Phys. Lett. 85, 1716 (2004) 2006-03-14T19:11:27+09:00Deep level defects in electron-irradiated 4H SiC epitaxial layers
http://dx.doi.org/10.1063/1.364397
2006-03-14T19:09:48+09:00