Papers - tagged 'Boron' - Defect dat@base
http://esrlab.jp/div-media/defect/index.php?q=&material=&method=&defect=Boron&sb=u
Papers - Defect dat@base2010-06-14T17:31:36+09:00Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing
http://dx.doi.org/10.1063/1.1567461
, J. Appl. Phys. 94, 1 (2003) 2010-06-14T17:31:36+09:00Fluorine in Si: Native-defect complexes and the supression of impurity diffusion
http://dx.doi.org/10.1103/PhysRevB.72.045219
Giorgia M. Lopez, Vincenzo Fiorentini, Giuliana Impellizzeri, Salvatore Mirabella, Enrico Napolitani, Phys. Rev. B 72, 045219 (2005) 2010-01-25T16:24:22+09:00Electronic and Atomic Structure of the Boron-Vacancy Complex in Silicon
http://dx.doi.org/10.1103/PhysRevB.35.1582
M. Sprenger, R. van Kemp, E. G. Sieverts, and C. A. J. Ammerlaan, Phys. Rev. B 35, 1582 (1987) 2009-11-18T18:49:31+09:00EPR of a Trapped Vacancy in Boron-Doped Silicon
http://dx.doi.org/10.1103/PhysRevB.13.2511
G. D. Watkins., Phys. Rev. B 13, 2511 (1976) 2009-11-18T18:42:55+09:00Paramagnetic Resonance Absorption from Acceptors in Silicon
http://dx.doi.org/10.1103/PhysRevLett.5.309
G. Feher, J. C. Hensel, and E. A. Gere, Phys. Rev. Lett. 5, 309 (1960) 2009-09-16T15:50:39+09:00Transition Metals in Silicon
http://dx.doi.org/10.1007/BF00617708
E. R. Weber., Appl. Phys. A 30, 1 (1983) 2009-08-19T14:10:23+09:00Electron Paramagnetic Resonance of Boron in Dislocation-Free Silicon Crystals
http://esrlab.jp/div-media/defect/index.php?q=&material=&method=&defect=Boron&sb=u&id=1960#1960
B. G. Zhurkin, N. A. Penin, N. N. Sibeldin., Sov. Phys. Semicond. 2, 688 (1968) 2008-09-22T11:40:47+09:00Shallow Impurity States in Silicon and Germanium
http://esrlab.jp/div-media/defect/index.php?q=&material=&method=&defect=Boron&sb=u&id=2002#2002
W. Kohn, Solid State Physics 5, 258-319 (1957) , Academic Press, New York (Edited by F. Seitz, D. Turnbull)2008-09-01T10:34:46+09:00EPR and ENDOR Investigations of Shallow Impurities in SiC Polytypes
http://dx.doi.org/10.1002/1521-396X(199707)162:1%3c95::AID-PSSA95%3e3.0.CO;2-X
S. Greulich-Weber, phys. stat. sol. (a) 162, 95-151 (1997) 2008-07-28T13:03:08+09:00Lattice parameters and thermal expansion of superconducting boron-doped diamonds
http://dx.doi.org/10.1103/PhysRevB.74.140502
V. V. Brazhkin, E. A. Ekimov, A. G. Lyapin, S. V. Popova, A. V. Rakhmanina, S. M. Stishov, V. M. Lebedev, Y. Katayama, and K. Kato, Phys. Rev. B 74, 140502(R) (2006) 2007-07-03T08:42:48+09:00Density functional study of gold atoms and clusters on a graphite (0001) surface with defects
http://dx.doi.org/10.1103/PhysRevB.74.165404
Jaakko Akola and Hannu Häkkinen, Phys. Rev. B 74, 165404 (2006) 2007-06-30T22:51:15+09:00Vibronic spectrum of c-BN measured with cathodoluminescence
http://dx.doi.org/10.1103/PhysRevB.74.155204
C. Manfredotti, R. Cossio, A. Lo Giudice, E. Vittone, and F. Fizzotti, Phys. Rev. B 74, 155204 (2006) 2007-06-28T15:29:29+09:00Doping and the unique role of vacancies in promoting the magnetic ground state in carbon nanotubes and C60 polymers
http://dx.doi.org/10.1103/PhysRevB.74.153403
Antonis N. Andriotis, R. Michael Sheetz, and Madhu Menon, Phys. Rev. B 74, 153403 (2006) 2007-06-28T14:58:52+09:00Magnetic properties of vacancies in a graphitic boron nitride sheet by first-principles pseudopotential calculations
http://dx.doi.org/10.1103/PhysRevB.75.193409
M. S. Si and D. S. Xue, Phys. Rev. B 75, 193409 (2007) 2007-06-27T20:27:23+09:00Self- and foreign-atom diffusion in semiconductor isotope heterostructures. II. Experimental results for silicon
http://dx.doi.org/10.1103/PhysRevB.75.035211
H. Bracht, H. H. Silvestri, I. D. Sharp, and E. E. Haller, Phys. Rev. B 75, 035211 (2007) 2007-06-25T19:06:56+09:00Microscopic evidence for evolution of superconductivity by effective carrier doping in boron-doped diamond: 11B-NMR study
http://dx.doi.org/10.1103/PhysRevB.75.033301
H. Mukuda, T. Tsuchida, A. Harada, Y. Kitaoka, T. Takenouchi, Y. Takano, M. Nagao, I. Sakaguchi, T. Oguchi, and H. Kawarada, Phys. Rev. B 75, 033301 (2007) 2007-06-25T18:55:44+09:00Theoretical study of Li and Na as n-type dopants for diamond
http://dx.doi.org/10.1103/PhysRevB.75.075202
J. P. Goss and P. R. Briddon, Phys. Rev. B 75, 075202 (2007) 2007-06-18T11:55:42+09:00Ab initio theoretical study of hydrogen and its interaction with boron acceptors and nitrogen donors in single-wall silicon carbide nanotubes
http://dx.doi.org/10.1103/PhysRevB.75.085416
A. Gali, Phys. Rev. B 75, 085416 (2007) 2007-06-18T11:35:38+09:00Observation of the Linear Stark Effect in a Single Acceptor in Si
http://dx.doi.org/10.1103/PhysRevLett.98.096805
L. E. Calvet, R. G. Wheeler, and M. A. Reed, Phys. Rev. Lett. 98, 096805 (2007) 2007-06-18T11:07:24+09:00First-Principles Simulations of Boron Diffusion in Graphite
http://dx.doi.org/10.1103/PhysRevLett.98.015501
I. Suarez-Martinez, A. A. El-Barbary, G. Savini, and M. I. Heggie, Phys. Rev. Lett. 98, 015501 (2007) 2007-06-18T10:55:06+09:00Bistability-Mediated Carrier Recombination at Light-Induced Boron-Oxygen Complexes in Silicon
http://dx.doi.org/10.1103/PhysRevLett.97.256602
Mao-Hua Du, Howard M. Branz, Richard S. Crandall, and S. B. Zhang, Phys. Rev. Lett. 97, 256602 (2006) 2007-06-18T10:26:11+09:00Atomistic Mechanism of Boron Diffusion in Silicon
http://dx.doi.org/10.1103/PhysRevLett.97.255902
Davide De Salvador, Enrico Napolitani, Salvatore Mirabella, Gabriele Bisognin, Giuliana Impellizzeri, Alberto Carnera, and Francesco Priolo, Phys. Rev. Lett. 97, 255902 (2006) 2007-06-18T10:22:18+09:00H-induced platelet and crack formation in hydrogenated epitaxial Si/Si0.98B0.02/Si structures
http://dx.doi.org/10.1063/1.2163992
L. Shao, Y. Lin, J. G. Swadener, J. K. Lee, Q. X. Jia, Y. Q. Wang, M. Nastasi, P. E. Thompson, N. D. Theodore, T. L. Alford, J. W. Mayer, P. Chen, S. S. Lau, Appl. Phys. Lett. 88, 021901 (2006) 2007-04-05T14:55:32+09:00Determination at 300 K of the hole capture cross section of chromium-boron pairs in p-type silicon
http://dx.doi.org/10.1063/1.2402261
S. Dubois, O. Palais, and P. J. Ribeyron, Appl. Phys. Lett. 89, 232112 (2006) 2006-12-23T13:05:58+09:00Electron-beam-induced dissociation of B–D complexes in diamond
http://dx.doi.org/10.1063/1.2400201
J. Barjon, J. Chevallier, F. Jomard, C. Baron, and A. Deneuville, Appl. Phys. Lett. 89, 232111 (2006) 2006-12-23T13:02:11+09:00Absence of oxygen diffusion during hydrogen passivation of shallow-acceptor impurities in single-crystal silicon
http://dx.doi.org/10.1063/1.95883
N. M. Johnson and M. D. Moyer , Appl. Phys. Lett. 46, 787 (1985) 2006-11-13T08:58:31+09:00Atomic deuterium passivation of boron acceptor levels in silicon crystals
http://dx.doi.org/10.1063/1.95874
J. C. Mikkelsen, Jr. , Appl. Phys. Lett. 46, 882 (1985) 2006-11-13T08:54:51+09:00{H,B}, {H,C}, and {H,Si} pairs in silicon and germanium
http://dx.doi.org/10.1103/PhysRevB.47.3620
Dj. M. Maric, P. F. Meier, S. K. Estreicher, Phys. Rev. B 47, 3620-3625 (1993) 2006-11-13T08:26:53+09:00Hydrogen Motion in Defect Complexes: Reorientation Kinetics of the B-H Complex in Silicon
http://dx.doi.org/10.1103/PhysRevLett.61.2786
Michael Stavola, K. Bergman, S. J. Pearton, and J. Lopata, Phys. Rev. Lett. 61, 2786 (1988) 2006-11-13T08:06:16+09:00Reorientation of the B-H complex in silicon by anelastic relaxation experiments
http://dx.doi.org/10.1103/PhysRevB.44.11486
G. Cannelli, R. Cantelli, M. Capizzi, C. Coluzza, F. Cordero, A. Frova, A. Lo Presti, Phys. Rev. B 44, 11486-11489 (1991) 2006-11-13T07:54:00+09:00Non-Arrhenius Reorientation Kinetics for the B-H Complex in Si: Evidence for Thermally Assisted Tunneling
http://dx.doi.org/10.1103/PhysRevLett.73.3419
Y. Michael Cheng and Michael Stavola, Phys. Rev. Lett. 73, 3419 (1994) 2006-11-13T07:48:29+09:00Phosphorus and sulphur doping of diamond
http://dx.doi.org/10.1103/PhysRevB.66.161202
L. G. Wang and Alex Zunger, Phys. Rev. B 66, 161202(R) (2002) 2006-11-07T15:35:41+09:00What can electron paramagnetic resonance tell us about the Si/SiO2 system?
http://dx.doi.org/10.1116/1.590301
P. M. Lenahan, J. F. Conley, Jr., J. Vac. Sci. Technol. B 16, 2134-2153 (1998) 2006-10-31T18:24:16+09:00Investigation of the indium-boron interaction in silicon
http://dx.doi.org/10.1063/1.2201443
S. Scalese, S. Grasso, M. Italia, V. Privitera, J. S. Christensen, and B. G. Svensson, J. Appl. Phys. 99, 113516 (2006) 2006-10-26T12:26:25+09:00Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC
http://dx.doi.org/10.1063/1.2195883
S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. Chichibu, J. Appl. Phys. 99, 093108 (2006) 2006-10-19T19:48:47+09:00Effects of temperature and flux on oxygen bubble formation in Li borosilicate glass under electron beam irradiation
http://dx.doi.org/10.1063/1.2189026
Nadège Ollier, Giancarlo Rizza, Bruno Boizot, and Guillaume Petite, J. Appl. Phys. 99, 073511 (2006) 2006-10-19T19:17:17+09:00Electronically activated boron-oxygen-related recombination centers in crystalline silicon
http://dx.doi.org/10.1063/1.2140584
Karsten Bothe and Jan Schmidt, J. Appl. Phys. 99, 013701 (2006) 2006-10-05T14:23:07+09:00Ab initio study of nitrogen and boron substitutional impurities in single-wall SiC nanotubes
http://dx.doi.org/10.1103/PhysRevB.73.245415
A. Gali, Phys. Rev. B 73, 245415 (2006) 2006-08-24T13:54:14+09:00First-principles investigation of a bistable boron-oxygen interstitial pair in Si
http://dx.doi.org/10.1103/PhysRevB.73.245210
A. Carvalho, R. Jones, M. Sanati, S. K. Estreicher, J. Coutinho, and P. R. Briddon, Phys. Rev. B 73, 245210 (2006) 2006-08-24T13:42:13+09:00Fast-forming boron-oxygen-related recombination center in crystalline silicon
http://dx.doi.org/10.1063/1.2147727
Karsten Bothe and Jan Schmidt, Appl. Phys. Lett. 87, 262108 (2005) 2006-08-17T15:10:57+09:00Transient Enhanced Diffusion of Boron in Si
http://dx.doi.org/10.1063/1.1471941
S. C. Jain, W. Schoenmaker, R. Lindsay, P. A. Stolk, S. Decoutere, M. Willander, H. E. Maes., J. Appl. Phys. 91, 8919-8941 (2002) 2006-03-17T02:46:36+09:00The Mechanism of the Enhancement of Divacancy Production by Oxygen During Electron Irradiation of Silicon. II. Computer Modeling
http://dx.doi.org/10.1063/1.331728
G. S. Oehrlein, I. Krafcsik, J. L. Lindström, A. E. Jaworowski, and J. W. Corbett, J. Appl. Phys. 54, 179-183 (1983) 2006-03-17T02:42:42+09:00EPR investigation of manganese clusters in silicon
http://dx.doi.org/10.1103/PhysRevB.61.1918
J. Martin, J. Wedekind, H. Vollmer, and R. Labusch, Phys. Rev. B 61, 1918 (2000) 2006-03-17T02:35:59+09:00Microscopic origin of light-induced ESR centers in undoped hydrogenated amorphous silicon
http://dx.doi.org/10.1103/PhysRevB.62.15702
Takahide Umeda, Satoshi Yamasaki, Junichi Isoya, and Kazunobu Tanaka, Phys. Rev. B 62, 15702 (2000) 2006-03-16T19:19:41+09:00Raman Scattering and Photoluminescence in Boron-Doped and Arsenic-Doped Silicon
http://dx.doi.org/10.1103/PhysRevB.7.4547
J. M. Cherlow, R. L. Aggarwal, and B. Lax, Phys. Rev. B 7, 4547 (1973) 2006-03-16T18:39:48+09:00Diffusion of hydrogen in perfect, p-type doped, and radiation-damaged 4H-SiC
http://dx.doi.org/10.1103/PhysRevB.69.233202
2006-03-15T00:06:32+09:00Possibility for the electrical activation of the carbon antisite by hydrogen in SiC
http://dx.doi.org/10.1103/PhysRevB.71.035213
A. Gali, P. Deák, N. T. Son, and E. Janzén, Phys. Rev. B 71, 035213 (2005) 2006-03-14T23:53:28+09:00Contactless studies of semi-insulating 4H–SiC
http://dx.doi.org/10.1016/S0921-4526(01)00870-5
W. E. Carlos, W. J. Moore, G. C. B Braga, J. A. Freitas, Jr. , E. R. Glaser and B. V. Shanabrook, Physica B 308-310, 691 (2001) 2006-03-10T18:25:10+09:00Defects in SiC
http://dx.doi.org/10.1016/j.physb.2003.09.001
2006-03-10T18:22:26+09:00First-principles studies of the diffusion of B impurities and vacancies in SiC
http://dx.doi.org/10.1103/PhysRevB.69.125203
R. Rurali, E. Hernández, P. Godignon, J. Rebollo, and P. Ordejón, Phys. Rev. B 69, 125203 (2004) 2006-03-10T16:50:20+09:00