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- 1. Phys. Rev. B 75, 195335 (2007) , “Computational and experimental imaging of Mn defects on GaAs (110) cross-sectional surfaces”, A. Stroppa, X. Duan, M. Peressi, D. Furlanetto, and S. ModestiWe present a combined experimental and computational study of the (110) cross-sectional surface of Mn δ-doped GaAs samples. We focus our study on three different selected Mn defect configurations not previously studied in detail, namely surface interstitial Mn, isolated and in pairs, and... (Read more)
- 2. Phys. Rev. B 75, 045210 (2007) , “Positron trapping kinetics in thermally generated vacancy donor complexes in highly As-doped silicon”, K. Kuitunen, K. Saarinen, and F. TuomistoWe have measured positron lifetime and Doppler broadening in highly As-doped silicon containing thermally generated V-As3 defect complexes (vacancy is surrounded by three arsenic atoms). We observe positron detrapping from the V-As3 defect complex and determine... (Read more)
- 3. Phys. Rev. B 75, 035211 (2007) , “Self- and foreign-atom diffusion in semiconductor isotope heterostructures. II. Experimental results for silicon”, H. Bracht, H. H. Silvestri, I. D. Sharp, and E. E. HallerWe report the diffusion of boron, arsenic, and phosphorus in silicon isotope multilayer structures at temperatures between 850 °C and 1100 °C. The diffusion of all dopants and self-atoms at a given temperature is modeled with the same setting of all native-point-defect-related parameters.... (Read more)
- 4. Phys. Rev. Lett. 98, 265502 (2007) , “Monovacancy and Interstitial Migration in Ion-Implanted Silicon”, P. G. Coleman and C. P. BurrowsThe migration of monovacancies (V0) and self-interstitials (I) has been observed in ion-implanted low-doped float-zone silicon by variable-energy positron annihilation spectroscopy. V0 and I were created by the in situ implantation of ~20 keV... (Read more)
- 5. Phys. Rev. B 74, 195202 (2006) , “Interstitial-mediated mechanisms of As and P diffusion in Si: Gradient-corrected density-functional calculations”, Scott A. Harrison, Thomas F. Edgar, and Gyeong S. HwangGradient-corrected density-functional calculations are used to determine the structure, stability, and diffusion of arsenic-interstitial and phosphorus-interstitial pairs in the positive, neutral, and negative charge states. For both cases, our calculations show that the neutral pair will be... (Read more)
- 6. Phys. Rev. B 74, 174206 (2006) , “Nuclear quadrupole resonance study of local bonding in glassy AsxSe1−x”, Eungho Ahn, G. A. Williams, and P. C. TaylorNuclear quadrupole resonance (NQR) experiments were performed on glassy AsxSe1−x to study the local structural order. The bonding in AsxSe1−x is governed by preferential bonding (chemical ordering) between arsenic... (Read more)
- 7. Phys. Rev. B 74, 035205 (2006) , “Mechanisms of arsenic clustering in silicon”, F. F. Komarov, O. I. Velichko, V. A. Dobrushkin, and A. M. MironovA model of arsenic clustering in silicon is proposed and analyzed. The main feature of the proposed model is the assumption that negatively charged arsenic complexes play a dominant role in the clustering process. To confirm this assumption, electron density and concentration of impurity atoms... (Read more)
- 8. Phys. Rev. B 74, 033304 (2006) , “5-7-5 line defects on As/Si(100): A general stress-relief mechanism for V/IV surfaces”, W. E. McMahon, Iskander G. Batyrev, T. Hannappel, J. M. Olson, and S. B. ZhangAn entire family of nano-scale trenches, ridges, and steps has been observed experimentally on AsH3-exposed Si(100). Some of these line structures have been observed previously, but their structures have remained a mystery. Theoretical modeling shows that they are all based upon the same... (Read more)
- 9. Phys. Rev. Lett. 97, 226401 (2006) , “Quasiparticle Corrections to the Electronic Properties of Anion Vacancies at GaAs(110) and InP(110)”, Magnus Hedström, Arno Schindlmayr, Günther Schwarz, and Matthias SchefflerWe propose a new method for calculating optical defect levels and thermodynamic charge-transition levels of point defects in semiconductors, which includes quasiparticle corrections to the Kohn-Sham eigenvalues of density-functional theory. Its applicability is demonstrated for anion vacancies at... (Read more)
- 10. Appl. Phys. Lett. 87, 231905 (2005) , “Structure, stability, and diffusion of arsenic-silicon interstitial pairs”, Scott A. Harrison, Thomas F. Edgar, and Gyeong S. HwangRecent experimental studies [A. Ural, P. B. Griffin, and J. D. Plummer, J. Appl. Phys. 85, 6440 (1999); R. Kim, T. Hirose, T. Shano, H. Tsuji, and K. Taniguchi, Jpn. J. Appl. Phys. 41, 227 (2002); S. Solmi, M. Ferri, M. Bersani, D. Giubertoni, and V. Soncini, J. Appl. Phys. 94,... (Read more)
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