Papers - tagged '4.0eV~' - Defect dat@base
http://esrlab.jp/div-media/defect/index.php?q=&material=&method=&defect=4.0eV%7E&sb=u
Papers - Defect dat@base2008-01-03T22:05:50+09:00Electrical characterization of metastable carbon clusters in SiC: A theoretical study
http://dx.doi.org/10.1103/PhysRevB.73.033204
A. Gali, N. T. Son, E. Janzn, Phys. Rev. B 73, 033204 (2006) 2008-01-03T22:05:50+09:00Luminescence properties of hexagonal boron nitride: Cathodoluminescence and photoluminescence spectroscopy measurements
http://dx.doi.org/10.1103/PhysRevB.75.085205
M. G. Silly, P. Jaffrennou, J. Barjon, J.-S. Lauret, F. Ducastelle, A. Loiseau, E. Obraztsova, B. Attal-Tretout, and E. Rosencher, Phys. Rev. B 75, 085205 (2007) 2007-06-18T11:23:04+09:00The role of nitrogen-related defects in high-k dielectric oxides: Density-functional studies
http://dx.doi.org/10.1063/1.1854210
J. L. Gavartin, A. L. Shluger, A. S. Foster, G. I. Bersuker, J. Appl. Phys. 97, 053704 (2005) 2006-11-07T20:03:42+09:00Hydrogen passivation of carbon Pb like centers at the 3C- and 4H-SiC/SiO2 interfaces in oxidized porous SiC
http://dx.doi.org/10.1063/1.2179128
J. L. Cantin, H. J. von Bardeleben, Yue Ke, R. P. Devaty, W. J. Choyke, Appl. Phys. Lett. 88, 092108 (2006) 2006-11-07T15:52:26+09:00Defect passivation in HfO2 gate oxide by fluorine
http://dx.doi.org/10.1063/1.2360190
K. Tse and J. Robertson, Appl. Phys. Lett. 89, 142914 (2006) 2006-11-07T11:07:10+09:00Density functional theory of structural transformations of oxygen-deficient centers in amorphous silica during hole trapping: Structure and formation mechanism of the Egamma[prime]" align="middle"> center
http://dx.doi.org/10.1103/PhysRevB.74.125203
T. Uchino and T. Yoko, Phys. Rev. B 74, 125203 (2006) 2006-10-31T18:18:49+09:00Optically active oxygen-deficiency-related centers in amorphous silicon dioxide
http://dx.doi.org/10.1016/S0022-3093(98)00720-0
Linards Skuja, J. Non-Cryst. Solids 239, 16-48 (1998) 2006-10-31T18:09:13+09:00