Papers - tagged '16O' - Defect dat@base
http://esrlab.jp/div-media/defect/index.php?q=&material=&method=&defect=16O&sb=u
Papers - Defect dat@base2009-10-28T19:03:42+09:00Solubility and Diffusion Coefficient of Oxygen in Silicon
http://dx.doi.org/10.1143/JJAP.24.279
Yoshiko Itoh and Tadashi Nozaki , Jpn. J. Appl. Phys. 24, 279 (1985) 2009-10-28T19:03:42+09:00Light-emitting defects and epitaxy in alkali-ion-implanted α quartz
http://dx.doi.org/10.1063/1.2215615
J. Keinonen, S. Gsiorek, P. K. Sahoo, S. Dhar, and K. P. Lieb, Appl. Phys. Lett. 88, 261102 (2006) 2006-10-29T17:39:57+09:00Oxygen Recoil Implant from SiO2 Layers into Single-Crystalline Silicon
http://dx.doi.org/10.1063/1.1355699
G. Wang, Y. Chen, D. Li, S. Oak, G. Srivastav, S. Banerjee, A. Tasch, P. Merrill, R. Bleiler., J. Appl. Phys. 89, 5997-6001 (2001) 2006-03-17T02:45:07+09:00Thermal Double Donors and Quantum Dots
http://dx.doi.org/10.1103/PhysRevLett.87.235501
2006-03-17T00:25:54+09:00Limiting Step Involved in the Thermal Growth of Silicon Oxide Films on Silicon Carbide
http://dx.doi.org/10.1103/PhysRevLett.89.256102
I. C. Vickridge, I. Trimaille, J.-J. Ganem, S. Rigo, C. Radtke, I. J. R. Baumvol, F. C. Stedile, Phys. Rev. Lett. 89, 256102 (2002) 2006-03-10T16:48:11+09:00