Papers - tagged '0.5-1.0eV' - Defect dat@base
http://esrlab.jp/div-media/defect/index.php?q=&material=&method=&defect=0.5-1.0eV&sb=u
Papers - Defect dat@base2010-06-14T17:48:09+09:00Relationship between interfacial nitrogen concentration and activation energies of fixed-charge trapping and interface state generation under bias-temperature stress condition
http://dx.doi.org/10.1063/1.1537053
, Appl. Phys. Lett. 82, 269 (2003) 2010-06-14T17:48:09+09:00A comprehensive model of PMOS NBTI degradation
http://dx.doi.org/10.1016/j.microrel.2004.03.019
, Microelectron. Reliability 45, 71 (2005) 2010-06-14T17:37:27+09:00Doubly charged state of EL2 defect in MOCVD-grown GaAs
http://dx.doi.org/10.1016/j.physb.2007.08.159
Nazir A. Naz, Umar S. Qurashi, Abdul Majid and M. Zafar Iqbal, Physica B 401, 250 (2007) , Elsevier2010-01-18T17:50:41+09:00Ab Initio Calculations to Model Anomalous Fluorine Behavior
http://dx.doi.org/10.1103/PhysRevLett.93.245901
Milan Diebel, Scott T. Dunham, Phys. Rev. Lett. 93, 245901 (2004) 2010-01-18T16:53:05+09:00Investigations of well defined dislocations in silicon
http://dx.doi.org/10.1016/0378-4363(83)90311-X
H. Alexander, C. Kisielowski-Kemmerich, E. R. Weber, Physica B 116, 583-593 (1983) 2010-01-18T14:43:38+09:00Optical Detection of Magnetic Resonance for a Deep-Level Defect in Silicon
http://dx.doi.org/10.1103/PhysRevLett.48.37
K. M. Lee, K. P. O'Donnell, J. Weber, B. C. Cavenett, and G. D. Watkins, Phys. Rev. Lett. 48, 37 (1982) 2009-11-26T12:14:16+09:00EPR Observation of the Isolated Interstitial Carbon Atom in Silicon
http://dx.doi.org/10.1103/PhysRevLett.36.1329
G. D. Watkins and K. L. Brower, Phys. Rev. Lett. 36, 1329 (1976) 2009-11-26T12:06:27+09:00EPR study of neutron-irradiated silicon: A positive charge state of the <100> split di-interstitial
http://dx.doi.org/10.1103/PhysRevB.14.4506
Young-Hoon Lee, Nikolai N. Gerasimenko, and James W. Corbett, Phys. Rev. B 14, 4506 (1976) 2009-11-26T10:39:48+09:00On the Energy Spectrum of Dislocations in Silicon
http://dx.doi.org/10.1002/pssa.2210720233
V. V. Kveder, Yu. A. Osipyan, W. Schrter, G. Zoth., phys. stat. sol. (a) 72, 701-713 (1982) 2009-11-19T11:50:25+09:00Photo-EPR of Dislocations in Silicon
http://dx.doi.org/10.1002/pssa.2210550128
R. Erdmann, H. Alexander., phys. stat. sol. (a) 55, 251 (1979) 2009-11-19T11:46:36+09:00Rhodium-related deep levels in n-type MOCVD GaAs
http://dx.doi.org/10.1016/S0921-4526(01)00811-0
M. Zafar Iqbal, A. Majid, S. Haidar Khan, Akbar Ali, Nasim Zafar, A. Dadgar and D. Bimberg, Physica B 308, 816 (2001) , Elsevier Science2009-10-07T16:13:40+09:00THE OPTICALLY DETECTED MAGNETIC RESONANCE OF DANGLING BONDS AT THE Si/SiO2 INTERFACE
http://dx.doi.org/10.1016/0038-1098(86)90334-0
K. M. Lee, L. C. Kimerling, B. G. Bagley, W. E. Quinn, Solid State Commun. 57, 615-617 (1986) 2008-12-18T17:48:42+09:00Optically detected magnetic resonance of dislocations in silicon
http://dx.doi.org/10.1103/PhysRevB.43.6569
V. Kveder, P. Omling, H. G. Grimmeiss, Yu. A. Osipyan, Phys. Rev. B 43, 6569 (1991) 2008-05-23T12:34:23+09:00Electrical characterization of metastable carbon clusters in SiC: A theoretical study
http://dx.doi.org/10.1103/PhysRevB.73.033204
A. Gali, N. T. Son, E. Janzn, Phys. Rev. B 73, 033204 (2006) 2008-01-03T22:05:50+09:00Surface smoothness of plasma-deposited amorphous silicon thin films: Surface diffusion of radical precursors and mechanism of Si incorporation
http://dx.doi.org/10.1103/PhysRevB.74.205324
Mayur S. Valipa, Tamas Bakos, and Dimitrios Maroudas, Phys. Rev. B 74, 205324 (2006) 2007-07-04T13:06:50+09:00Density functional study of gold atoms and clusters on a graphite (0001) surface with defects
http://dx.doi.org/10.1103/PhysRevB.74.165404
Jaakko Akola and Hannu Häkkinen, Phys. Rev. B 74, 165404 (2006) 2007-06-30T22:51:15+09:00First-principles study of the intrinsic defects in PbFCl
http://dx.doi.org/10.1103/PhysRevB.74.174101
Bo Liu, Zeming Qi, and Chaoshu Shi, Phys. Rev. B 74, 174101 (2006) 2007-06-30T21:46:26+09:00Ab initio study of hydrogen interaction with pure and nitrogen-doped carbon nanotubes
http://dx.doi.org/10.1103/PhysRevB.75.075420
Zhiyong Zhang and Kyeongjae Cho, Phys. Rev. B 75, 075420 (2007) 2007-06-18T12:14:18+09:00Diffusion mechanisms of native point defects in rutile TiO2: Ab initio total-energy calculations
http://dx.doi.org/10.1103/PhysRevB.75.073203
Hakim Iddir, Serdar Öüt, Peter Zapol, and Nigel D. Browning, Phys. Rev. B 75, 073203 (2007) 2007-06-18T11:46:31+09:00Quasiparticle Corrections to the Electronic Properties of Anion Vacancies at GaAs(110) and InP(110)
http://dx.doi.org/10.1103/PhysRevLett.97.226401
Magnus Hedström, Arno Schindlmayr, Günther Schwarz, and Matthias Scheffler, Phys. Rev. Lett. 97, 226401 (2006) 2007-06-18T10:08:47+09:00Absence of oxygen diffusion during hydrogen passivation of shallow-acceptor impurities in single-crystal silicon
http://dx.doi.org/10.1063/1.95883
N. M. Johnson and M. D. Moyer , Appl. Phys. Lett. 46, 787 (1985) 2006-11-13T08:58:31+09:00Hydrogen diffusivities below room temperature in silicon evaluated from the photoinduced dissociation of hydrogen–carbon complexes
http://dx.doi.org/10.1063/1.105772
Yoichi Kamiura, Minoru Yoneta, and Fumio Hashimoto , Appl. Phys. Lett. 59, 3165 (1991) 2006-11-13T08:50:44+09:00Negative-U property of oxygen vacancy in cubic HfO2
http://dx.doi.org/10.1063/1.2009826
Y. P. Feng, A. T. L. Lim, M. F. Li, Appl. Phys. Lett. 87, 062105 (2005) 2006-11-07T20:09:02+09:00Properties of Fe-doped semi-insulating GaN structures
http://dx.doi.org/10.1116/1.1633776
A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, S. J. Pearton, J. Vac. Sci. Technol. B 22, 120-125 (2004) 2006-11-07T18:23:10+09:00Degradation of hexagonal silicon-carbide-based bipolar devices
http://dx.doi.org/10.1063/1.2159578
M. Skowronski and S. Ha, J. Appl. Phys. 99, 011101 (2006) 2006-11-07T17:56:04+09:00Defects and electrical behavior in 1 MeV Si+-ion-irradiated 4H–SiC Schottky diodes
http://dx.doi.org/10.1063/1.2158501
F. Roccaforte, S. Libertino, V. Raineri, A. Ruggiero, V. Massimino, and L. Calcagno, J. Appl. Phys. 99, 013515 (2006) 2006-11-07T17:46:09+09:00Phosphorus and sulphur doping of diamond
http://dx.doi.org/10.1103/PhysRevB.66.161202
L. G. Wang and Alex Zunger, Phys. Rev. B 66, 161202(R) (2002) 2006-11-07T15:35:41+09:00Dual behavior of H+ at Si–SiO2 interfaces: Mobility versus trapping
http://dx.doi.org/10.1063/1.1504879
S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, Appl. Phys. Lett. 81, 1839 (2002) 2006-11-07T13:14:23+09:00Negative oxygen vacancies in HfO2 as charge traps in high-k stacks
http://dx.doi.org/10.1063/1.2236466
J. L. Gavartin, D. Muñoz Ramo, A. L. Shluger, G. Bersuker, and B. H. Lee, Appl. Phys. Lett. 89, 082908 (2006) 2006-11-07T11:09:13+09:00An asymmetry of conduction mechanisms and charge trapping in thin high-k HfxTiySizO films
http://dx.doi.org/10.1063/1.2039270
A. Paskaleva, A. J. Bauer, M. Lemberger, J. Appl. Phys. 98, 053707 (2005) 2006-11-02T10:33:23+09:00Optically active oxygen-deficiency-related centers in amorphous silicon dioxide
http://dx.doi.org/10.1016/S0022-3093(98)00720-0
Linards Skuja, J. Non-Cryst. Solids 239, 16-48 (1998) 2006-10-31T18:09:13+09:00ELECTRICAL AND OPTICAL STUDY OF CHARGE TRAPS AT PASSIVATED GaAs SURFACES
http://esrlab.jp/div-media/defect/index.php?q=&material=&method=&defect=0.5-1.0eV&sb=u&id=2355#2355
Y. Mochizuki, Mater. Res. Soc. Symp. Proc. 573, 107 (1999) 2006-10-31T12:08:19+09:00Interface traps and Pb centers in oxidized (100) silicon wafers
http://dx.doi.org/10.1063/1.97611
G. J. Gerardi, E. H. Poindexter, P. J. Caplan, N. M. Johnson, Appl. Phys. Lett. 49, 348-350 (1986) 2006-10-31T11:59:37+09:00Electronic traps and Pb centers at the Si/SiO2 interface: Band-gap energy distribution
http://dx.doi.org/10.1063/1.333819
E. H. Poindexter, G. J. Gerardi, M. -E. Rueckel, P. J. Caplan, N. M. Johnson, D. K. Biegelsen, J. Appl. Phys. 56, 2844-2849 (1984) 2006-10-31T11:39:01+09:00Interface states for HfO2/Si structure observed by x-ray photoelectron spectroscopy measurements under bias
http://dx.doi.org/10.1063/1.2354436
Osamu Maida, Ken-ichi Fukayama, Masao Takahashi, Hikaru Kobayashi, Young-Bae Kim, Hyun-Chul Kim, and Duck-Kyun Choi, Appl. Phys. Lett. 89, 122112 (2006) 2006-10-31T10:25:18+09:00