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- 1. Jpn. J. Appl. Phys. 49, 071302 (2010) , “Deep-Level Transient Spectroscopy and Photoluminescence Studies of Formation and Depth Profiles of Copper Centers in Silicon Crystals Diffused with Dilute Copper”, Minoru Nakamura and Susumu MurakamiWe have observed the formation of the Cu centers in p-type Si crystals diffused with dilute Cu between 400 and 1000 °C by deep-level transient spectroscopy (DLTS) and photoluminescence methods. For the samples diffused below 800 °C, a DLTS Cu center denoted as the CuDLB center was... (Read more)
- 2. Microelectron. Reliability 46, 1 (2006) , “NBTI degradation: From physical mechanisms to modelling”,An overview of the evolution of transistor parameters under negative bias temperature instability stress conditions commonly observed in p-MOSFETs in recent technologies is presented. The physical mechanisms of the degradation as well as the different defects involved have been discussed according to a systematic set of experiments with different stress conditions. According to our findings, a physical model is proposed which could be used to more accurately predict the transistor degradation. Finally, based on our new present understanding, a new characterization methodology is proposed, which would open the way to a more accurate determination of parameter shifts and thus allowing implementing the degradation into design rules. (Read more)
- 3. IEEE Electron Device Lett. 25, 153 (2004) , “Evaluation of NBTI in HfO2 Gate-Dielectric Stacks With Tungsten Gates”,
- 4. Appl. Phys. Lett. 82, 269 (2003) , “Relationship between interfacial nitrogen concentration and activation energies of fixed-charge trapping and interface state generation under bias-temperature stress condition”,The influence of nitrogen concentration at a nitrided oxide/silicon interface on the activation energies of both near-interface fixed-charge trapping and interface state generation caused by negative bias temperature instability stress has been studied quantitatively. It is observed that the charge... (Read more)
- 5. Appl. Phys. Lett. 83, 1647 (2003) , “Dynamic recovery of negative bias temperature instability in p-type metal–oxide–semiconductor field-effect transistors”,An unexpected physical phenomenondynamic recovery of negative bias temperature instability (NBTI)is reported. NBTI degradation in p-type metaloxidesemiconductor field-effect transistors is significantly (by ~40%) reduced after stress interruption. NBTI recovery... (Read more)
- 6. Microelectron. Reliability 45, 71 (2005) , “A comprehensive model of PMOS NBTI degradation ”,Negative bias temperature instability has become an important reliability concern for ultra-scaled Silicon IC technology with significant implications for both analog and digital circuit design. In this paper, we construct a comprehensive model for NBTI phenomena within the framework of the standard reaction–diffusion model. We demonstrate how to solve the reaction–diffusion equations in a way that emphasizes the physical aspects of the degradation process and allows easy generalization of the existing work. We also augment this basic reaction–diffusion model by including the temperature and field-dependence of the NBTI phenomena so that reliability projections can be made under arbitrary circuit operating conditions. (Read more)
- 7. J. Appl. Phys. 94, 1 (2003) , “Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing”,We present an overview of negative bias temperature instability (NBTI) commonly observed in p-channel metaloxidesemiconductor field-effect transistors when stressed with negative gate voltages at elevated temperatures. We discuss the results of such stress on device and circuit... (Read more)
- 8. J. Appl. Phys. 100, 094108 (2006) , “The effect of interfacial layer properties on the performance of Hf-based gate stack devices”, G. Bersuker, C. S. Park, J. Barnett, P. S. Lysaght, P. D. Kirsch, C. D. Young, R. Choi, B. H. Lee, B. Foran, K. van Benthem, S. J. Pennycook, P. M. Lenahan, and J. T. RyanThe influence of Hf-based dielectrics on the underlying SiO2 interfacial layer (IL) in high-k gate stacks is investigated. An increase in the IL dielectric constant, which correlates to an increase of the positive fixed charge density in the IL, is found to depend on the starting,... (Read more)
- 9. Appl. Phys. Lett. 81, 2397-2399 (2002) , “Hydrogen redistribution induced by negative-bias-temperature stress in metal–oxide–silicon diodes”, Ziyuan LiuPoly-Si/SiO2/Si diodes in which oxides were grown thermally under wet oxidation conditions and subsequently treated by a post-oxidation anneal (POA) have been characterized electrically and chemically before and after applying negative-bias-temperature stress (NBTS). It was confirmed that... (Read more)
- 10. Appl. Phys. Lett. 76, 3771-3773 (2000) , “Do Pb1 centers have levels in the Si band gap? Spin-dependent recombination study of the Pb1 "hyperfine spectrum"”, Tetsuya D. Mishima and Patrick M. LenahanThe electronic properties of the (001) Si/SiO2 Pb1 defect are the subject of considerable controversy. We present spin-dependent recombination results which indicate most strongly that the Pb1 centers have levels in the Si band gap. Our... (Read more)
- 11. Appl. Phys. Lett. 80, 1945-1947 (2002) , “Density of states of Pb1 Si/SiO2 interface trap centers”, J. P. Campbell and P. M. LenahanThe electronic properties of the (100) Si/SiO2 interfacial defect called Pb1 are quite controversial. We present electron spin resonance measurements that demonstrate: (1) that the Pb1 defects have levels in the silicon band gap, (2) that... (Read more)
- 12. Appl. Phys. Lett. 87, 204106 (2005) , “Direct observation of the structure of defect centers involved in the negative bias temperature instability”, J. P. Campbell and P. M. LenahanWe utilize a very sensitive electron paramagnetic resonance technique called spin-dependent recombination to observe and identify defect centers generated by modest negative bias and moderately elevated temperatures in fully processed p-channel metal-oxide-silicon field-effect transistors.... (Read more)
- 13. Appl. Phys. Lett. 90, 123502 (2007) , “Observation of negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination”,The authors combine metal oxide semiconductor (MOS) gated diode measurements and very sensitive electrically detected electron spin resonance measurements to detect and identify negative bias temperature instability (NBTI) generated defect centers in fully processed HfO2 pMOS field effect... (Read more)
- 14. Appl. Phys. Lett. 91, 133507 (2007) , “Identification of atomic-scale defect structure involved in the negative bias temperature instability in plasma-nitrided devices”, J. P. Campbell, P. M. Lenahan, A. T. Krishnan, and S. KrishnanWe utilize a very sensitive electron spin resonance technique called spin-dependent tunneling to identify defect centers involved in the negative bias temperature instability in plasma-nitrided p-channel metal-oxide-silicon field-effect transistors. The defect's 29Si hyperfine... (Read more)
- 15. J. Appl. Phys. 95, 4096 (2004) , “Nitridation effects on Pb center structures at SiO2/Si(100) interfaces ”,Interfacial defect structures of NO-nitride oxide on Si(100) were characterized by electron spin resonance spectroscopy. We confirmed that the effective g values of the Pb1 center are affected by interfacial nitridation even at a small nitrogen concentration of 5 at. %, while those of the Pb0 center proved to be unchanged. We observed that the shifted Pb1 line appeared gradually with interfacial nitrogen concentration, which suggests that the nitrogen-induced modified structure substitutes for the original Pb1 structure. Angular variations of the shifted Pb1 lines were also significantly different from those of pure oxide. Based on our analysis, we attributed the g value shift of the Pb1 center to dangling bond tilting, caused by the displacement of nearest-neighbor Si atoms. (Read more)
- 16. Microelectron. Reliability 45, 57 (2005) , “Characterization of interface defects related to negative-bias temperature instability SiON/Si<100> systems ”,Interface defects related to negative-bias temperature instability (NBTI) in an ultrathin plasma-nitrided SiON/ Si<100> system were characterized by using conductance–frequency measurements, electron-spin resonance measure- ments, and synchrotron radiation X-ray photoelectron spectroscopy. It was confirmed that NBTI is reduced by using D2-annealing instead of the usual H2-annealing. Interfacial Si dangling bonds (Pb1 and Pb0 centers) were detected in a sample subjected to negative-bias temperature stress (NBTS). Although we suggest that NBTS also generates non-Pb defects, it does not seem to generate nitrogen dangling bonds. These results show that NBTI of the plasma-nitrided SiON/Si system is predominantly due to Pb depassivation. Plasma nitridation was also found to increase the Pb1/Pb0 density ratio, modify the Pb1 defect structure, and increase the latent interface trap density by generating Si suboxides at the interface. These changes are likely to be the causes of NBTI in ultrathin plasma-nitrided SiON/Si systems. (Read more)
- 17. Jpn. J. Appl. Phys. 40, 2840 (2001) , “Spin-Dependent Trap-Assisted Tunneling Current in Ultra-Thin Gate Dielectrics”,We have characterized the leakage current paths of ultra-thin gate dielectrics using spin-dependent tunneling (SDT) spectroscopy. A spin-dependent current was detected in metal-oxide-semiconductor diodes with chemical-vapor-deposition SiN gate films with thickness less than 3 nm. We examined the nature of the trap sites in terms of g-value, bias-dependent signal intensity, and magnetic-field orientation dependence. The main feature of the observed spectrum is attributed to a paramagnetic Si site in the SiN films. By using a quantitative model of electron spin-polarization, we were able to estimate the ratio of trap-assisted current to the total leakage current. (Read more)
- 18. Appl. Phys. Lett. 82, 3677-3679 (2003) , “Interface defects responsible for negative-bias temperature instability in plasma-nitrided SiON/Si(100) systems”, Shinji Fujieda, Yoshinao Miura, and Motofumi SaitohInterface defects generated by negative-bias temperature stress (NBTS) in an ultrathin plasma- nitrided SiON/Si(100) system were characterized by using D2 annealing, conductance-frequency measurements, and electron-spin resonance measurements. D2 annealing was shown to lower... (Read more)
- 19. Jpn. J. Appl. Phys. 49, 05FE02 (2010) , “Photoinduced Leakage Currents in Silicon Carbon Nitride Dielectrics for Copper Diffusion Barriers”, Kiyoteru Kobayashi and Taketoshi IdeThe current conduction in silicon carbon nitride (SiCN) dielectric films subjected to ultraviolet (UV) illumination at room temperature has been investigated. After exposure of SiCN single-layer and SiCN–SiO2 double-layer films to 4.9-eV UV illumination, leakage currents through... (Read more)
- 20. Jpn. J. Appl. Phys. 49, 051001 (2010) , “Nitrogen-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy”, Boussairi Bouzazi, Hidetoshi Suzuki, Nobuaki Kojima, Yoshio Ohshita, and Masafumi YamaguchiA nitrogen-related deep electron trap, at approximately 0.33 eV below the conduction band minimum of GaAsN grown by chemical beam epitaxy, is confirmed to act as a recombination center. The level is found to be responsible for the reverse bias current in the depletion region of n-type GaAsN schottky... (Read more)
- 21. Appl. Phys. Express 3, 051002 (2010) , “Nitrogen Related Electron Trap with High Capture Cross Section in n-Type GaAsN Grown by Chemical Beam Epitaxy”, Boussairi Bouzazi, Hidetoshi Suzuki, Nobuaki Kojima, Yoshio Ohshita, and Masafumi YamaguchiA nitrogen-related electron trap, at around 0.3 eV from the conduction band minimum of n-type GaAsN grown by chemical beam epitaxy, is confirmed using deep level transient spectroscopy and nitrogen concentration dependence of its density. It has a high capture cross section and not observed in N... (Read more)
- 22. Appl. Phys. Express 3, 031103 (2010) , “High-Quality p-Type ZnO Films Grown by Co-Doping of N and Te on Zn-Face ZnO Substrates”, Seunghwan Park, Tsutomu Minegishi, Dongcheol Oh, Hyunjae Lee, Toshinori Taishi, Jinsub Park, Mina Jung, Jiho Chang, Inho Im, Junseok Ha, Soonku Hong, Ichiro Yonenaga, Toyohiro Chikyow, and Takafumi YaoThis article will report the epitaxial growth of high-quality p-type ZnO layers on Zn-face ZnO substrates by nitrogen and tellurium (N+Te) co-doping. ZnO:[N+Te] films show p-type conductivity with a hole concentration of 4×1016 cm-3, while ZnO:N shows n-type... (Read more)
- 23. Solid State Commun. 7, ii-iii (1969) , “ESR-resonance in doped GaAs and GaP”, S. Haraldson , C-G RibbingESR-signals from GaP:Sn, GaP:Si and GaAs:Si, GaAs:Te are reported. GaP:Sn crystals give two Isotropie signals. The larger one of them with g-value 1.998 is attributed to bound donor electrons. No definite conclusion about the origin of the other line with g = 2.131 is presented. The system... (Read more)
- 24. Phys. Solid State 38, 549 (1996) , “Identification of Intrinsic Interstitial Complexes in Silicon by EPR”, G. O. Tozhibaev, Sh. M. Makhkamov, Yu. V. Gorelkinski?, N. A. Tursunov, M. A. Makhov.Although a large number of experimental papers on defect center states in silicon have been published, there is still not enough information on intrinsic interstitial defects. Of the large number of defects identified by EPR signals in irradiated silicon, only four centers (Si-G25, Si-A5, Si-B3, and Si-P6) are related to intrinsic interstitial complexes of silicon.
- 25. Phys. Solid State 40, 1648 (1998) , “Electron paramagnetic resonance of defects with metastable properties in crystalline GaN”, P. G. Baranov, I. V. Il'in, E. N. Mokhov, V. A. KhramtsovAn EPR study of GaN revealed the presence of defects exhibiting metastable properties. EPR spectra of two centers (ii1a and ii1b) with axial symmetry along the hexagonal axis of the crystal, which have strongly anisotropic g factors, were observed. The anisotropy of the spectra decreases, and the line shape changes, with increasing temperature. The spectra of the ii1a and ii1b centers disappear at 25 and 50 K, respectively. Subsequent cooling of the samples does not restore the EPR signals, which implies that one observes here phenomena inherent in defects with metastable states. To restore EPR signals, one has to warm the samples to room temperature under very specific conditions. The possible microstructure of the discovered defects is discussed. (Read more)
- 26. Advances in Science and Technology 46, 73 (2006) , Trans Tech Publications, Switzerland , “Electric-Field-Enhanced Thermal Emission from Osmium-Related”, M. Zafar Iqbal, A. Majid, A. Dadgar and D. BimbergDeep-level defects related with 5d transition metal, osmium (Os) have been studied in ntype GaAs. Os has been incorporated in epitaxial n-GaAs layers in situ, during growth by lowpressure metal-organic chemical vapour phase epitaxy (MOVPE) technique. Mesa p+nn+ junction diodes are fabricated for investigations by deep level transient spectroscopy (DLTS). Two deeplevel peaks, observed in majority carrier (electron) emission spectra, Os1 and Os2, show a significant shift in peak positions to lower temperatures with the applied junction reverse bias, demonstrating enhancement of the thermal emission rate by the junction electric field. Doublecorrelation DLTS (DDLTS) measurements have been employed for accurate quantitative investigations of the observed field dependence. However, in view of the relatively small concentration of the deep level Os1, this technique is found to yield reliable data only for the deep level corresponding to the dominant peak, Os2. Detailed data have been obtained on the field effect for Os2, extending over junction electric field values 3 x 106 V/m - 1.2 x 107 V/m. The measured emission rate signatures show a reduction of the thermal activation energy from 0.48 eV to 0.21 eV for Os2 over this electric field range. Analysis of the data in terms of the recent theoretical work on field dependence indicates that Os2 is associated with a substitutional Os donor. (Read more)
- 27. J. Magn. Reson. 136, 207-210 (1999) , “A Cryogenically Coolable Microwave Limiter”, George A. Rinard, Richard W. Quine , Gareth R. EatonA microwave (ca. 3 GHz) limiter, constructed using a GaAs PIN diode and microstrip impedance transformation circuit, limited 300-ns long 11-W microwave pulses to 70 mW at ca. 4.2 K. This limiter was implemented in a pulsed electron paramagnetic resonance (EPR) spectrometer to protect a low-noise microwave preamplifier from the high-power pulses. (Read more)
- 28. Semiconductors 38, 125 (2004) , “Radiation Resistance of SiC and Nuclear-Radiation Detectors Based on SiC Films”, A. A. Lebedev, A. M. Ivanov, N. B. StrokanA microwave (ca. 3 GHz) limiter, constructed using a GaAs PIN diode and microstrip impedance transformation circuit, limited 300-ns long 11-W microwave pulses to 70 mW at ca. 4.2 K. This limiter was implemented in a pulsed electron paramagnetic resonance (EPR) spectrometer to protect a low-noise microwave preamplifier from the high-power pulses. (Read more)
- 29. Solid State Commun. 7, ⅱ‐ⅲ (1969) , “ESR-resonance in doped GaAs and GaP”, S. Haraldson , C-G Ribbing
- 30. Nature 210, 692 (1966) , “DISTRIBUTION OF SUBSTITUTIONAL NITROGEN DONORS IN SYNTHETIC DIAMONDS”, M. J. A. Smith, B. R. Angel, R. G. EmmonsConsiderable attention has been devoted to the study of nitrogen impurity in natural diamonds using the technique of electron spin resonance1-3. The spectrum obtained in due to the unpaired electron provided by the substitutional nitrogen atom and the main feature is a triplet at g = 2.0024 caused by interaction with the nitrogen nucleus which has a spin of unity. The distribution of nitrogen is variable and would seem to depend on the method by which the diamond was formed. (Read more)
- 31. Nature 194, 829 (1962) , “DIAMONDS CONTAINING CONTROLLABLE IMPURITY CONCENTRATIONS”, C. M. Huggins, P. CannonThe presence of cosiderable quantities of impurities in natural diamond has recently been confirmed1,2. This led Frank3 to remark that multiple techniques of examination must be used on such material. In view of the report of Yoneda4 concerning possible effects of nitrogen on the X-ray diffraction patterns of diamond, it seems worth-while to us to comment further on some of the results which we have gained by the deliberate introduction of a given impurity into laboratory-grown diamond. We shall limit ourselves to a qualitative examination of the electron spin resonance spectra of a few specimens, in the belief that the profundity of the effects suffices to establish that progress in this area is now limited by the composition variability of natural diamond. (Read more)
- 32. Nature 173, 439 (1954) , “PARAMAGNETIC RESONANCE IN NEUTRON-IRRADIATED DIAMOND AND SMOKY QUARITZ”, Dr. J. H. E. Griffiths, J. Owen, I. M. WardThe nature of lattice defects in neutron-irradiated diamond is a problem of current interest. These defects are known to cause changes in some of the physical properties1 and give rise to a paramagnetic absorption spectrum. We have measured this spectrum in the temperature-range 20º-290ºK., using wave-lengths of 1-2 and 3-1 cm. There are many closely spaced lines, of which two main types can be distinguished. (Read more)
- 33. Nature 198, 981 (1963) , “Electron Spin Resonance in Neutron-irradiated Diamond”, E. A. Faulkner, E. W. J. Mitchell, P. W. WhippeyRecent work has shown that the nature of the electron spin resonance spectrum observed in irradiated diamond depends on the type and amount of irradiation. Faulkner and Lomer used comparatively heavy doses of 2-MeV electrons (up to 8×1019 electron cm-3) and distinguished four systems, all of which show a g-value which is isotropic and equal to the free-spin value within 0-2 per cent: (a) asingle line of width about 5 gauss; (b) a system of 24 lines with symmentry axes near the <221> directions, and a D-value of 0-14 cm-1; (c) a system of 6 lines with symmentry axes along the <100> directions and a D-value of 0-14 cm-1; (d) a broad absorption with a half-power width of about 70 gauss, showing a complicated anisotropic structure. (Read more)
- 34. J.Am.Chem.Soc. 130, 48 (2008) , ACS , “Enhanced Ferromagnetism and Tunable Saturation Magnetization of Mn/C Codoped GaN Nanostructures Synthesized by Carbothermal Nitridation”, Zeyan Wang, Baibiao Huang, Lin Yu, Ying Dai, Peng Wang, Xiaoyan Qin, Xiaoyang Zhang, Jiyong Wei, Jie Zhan, Xiangyang Jing, Haixia Liu, and Myung-Hwan WhangboMn/C-codoped GaN nanostructures were synthesized by carbothermal nitridation with active charcoal as the carbon source. Nanostructures such as zigzag nanowires and nanoscrews were observed by varying the reaction time and the C/Ga molar ratio of the starting material used for the synthesis. The structures and morphologies of the as-grown samples were characterized by X-ray diffraction, scanning electron microscopy, and high-resolution transmission electron microscopy measurements. The doping of both Mn and C in the GaN matrix was confirmed by X-ray photoelectron spectroscopy measurements, and the ferromagnetic properties of Mn/C-codoped GaN samples were confirmed by room-temperature magnetization measurements. The saturation magnetization of Mn/C-codoped GaN increases steadily with increasing C/Ga molar ratio of the starting material at a rate of ~0.023 emu/g per C/Ga molar ratio, and the ferromagnetism of Mn/C-codoped GaN can be stronger than that of Mn-doped GaN by a factor of ~40. A plausible growth mechanism was proposed, and the role of carbon codoping in tuning the morphology and ferromagnetic property was discussed. Our work suggests that carbon doping in the GaN matrix favors the N sites over the Ga sites, Mn/C-codoping in the GaN matrix is energetically favorable, and the C-codoping strongly enhances the preference of the FM coupling to the AFM coupling between the two doped Mn sites. These suggestions were probed on the basis of first-principles density functional theory electronic structure calculations for a number of model doped structures constructed with a 32-atom 2 × 2 × 2 supercell. (Read more)
- 35. phys. stat. sol. (b) 189, K1 (1995) , “Charge States of Interstitial Defects in Implanted Silicon and Their Annealing Temperatures”, M. Jadan, N. I. Berezhnov, A. R. Chelyadinskii.In radiation physics of silicon a "vacancy" period has persisted for quite a long time. From a number of investigations it has been inferred that a divacancy is the main defect, stable at room temperature in silicon irradiated by fast neutrons and irons[1 to 3]. The concentrations of stable... (Read more)
- 36. Phys.Rev.Lett. 79, 1507 (1997) , “Identification of the Silicon Vacancy Containing a Single Hydrogen Atom by EPR”,he electron paramagnetic resonance spectrum of float-zone silicon recorded after implantation with protons contains a strongly temperature dependent signal from a vacancy-type defect. The signal displays monoclinic-I symmetry below 65 K and trigonal symmetry above 100 K. This symmetry change, together with a hyperfine splitting from a single proton, allows an unequivocal identification with VH0, the neutral charge state of a vacancy containing a single hydrogen atom. The striking similarity between the properties of VH0 and VP0 (the E center) corroborate our identification.
- 37. Physica B 170, 155 (1991) , “Electron paramagnetic resonance of hydrogen in silicon ”, Yu.V.Gorelkinskii, N.N.NevinnyiA review of the investigations by means of electron paramagnetic resonance (EPR) of hydrogen and hydrogen-related defects in crystalline silicon is presented. The main features of the EPR center Si-AA9 (bond-centered hydrogen), which is known as the hydrogenic analogue of the anomalous muonium (Mu*) in silicon, are discussed. It was found that the process of annealing the AA9 center is characterized by an activation energy, E = 0.48 ± 0.04 eV with a second-order pre-exponential factor, K0 = (1.25 ± 2.5) × 10-7 cm3/s. A detailed investigation by EPR of the defect (Si-AA1), which we identify as the hydrogen-related shallow donor in a positive charge state, is also presented. In particular it is shown that the H-related shallow donor is a helium-like center and its wave function has C2v symmetry. Moreover, the main features of the series of EPR spectra in silicon characteristic for the implantation of hydrogen are presented.
- 38. Solid State Commun. 61, 199 (1987) , “An EPR study on a new triclinic symmetry defect in neutron-irradiated FZ-silicon”, Wu En, Wu Shu-xian, Mao Jin-Chang, Yan Mao-Xun and Qin Guo-gangA new defect, labled as Si-PK1, has been observed with EPR (Electron Paramagnetic Resonance) in neutron irradiated FZ-Si grown in argon, hydrogen and vacuum. Its symmetry has been determined to be triclinic symmetry, the lowest possible symmetry. Si-PK1 has not been observed in CZ-Si. It is not related to any common impurities in Si, like oxygen, carbon, phosphorus and boron, and it should be an intrinsic defect. Combining with the empirical classification of g tensor, it is concluded that Si-PK1 may be a multi-vacancy cluster.
- 39. phys. stat. sol. (b) 105, K91 (1981) , “Determination of the Zero-Field Splitting of Iron-Boron Pairs in Silicon”, W. Gehlhoff, K. H. Segsa, C. Meyer.In hte discussion of the omportant role of iron in connection with the formation of htermally induced defects in sillicon /1 to 4/ it seems to be expedient to remind of the fact that the direct detection of iron by EPR measurements is not restricted to the observation of neutral iron on a T... (Read more)
- 40. phys. stat. sol. (a) 41, K21 (1977) , “Anisotropic Broadening of Linewidth in the EPR Spectrum of Fe0 in Silicon”, W. Gehlhoff, K. H. Segsa.Measurements of temperature dependances of the Hall coefficient and resistivity in iron doped sillicon crystals slow that iron acts as a donor impurity, introducing a converts to a donor level 0.4 eV from the valence band. This level is unstable at room temperature and converts to a donor level 0.55... (Read more)
- 41. J. Phys. Chem. 88, 5255-5260 (1984) , “Dynamic Interchange among Three States of Phosphorus (4+) in ?-Quartz. 2.”, Y. Uchida, J. Isoya, J. A. WeilThe dynamic process due to electron jumping among three states with different sp hybrid directions in the quasitetrahedral P4+ center [PO4]0 in a-quartz has been investigated by 10-GHz electron paramagnetic resonance, over the temperature range 40 to 400 K. The relative populations (mole fractions ƒІ and ƒІІ) of the ground state P(І) and two degenerate thermally excited states P(ІІ) were determined from the measured EPR absorption line intensity ratios and from the line positions of the averaged state P(A), respectively, in the slow and fast kinetic regions. The temperature dependence of the mole fractions has been explained by considering vibrational sublevels in the potential well describing each state. The jump rate was also obtained, via EPR absorption line-width analysis based on the Bloch equations, in both the slow and the fast regions. The characteristic parameters of the dynamic process, Le., energy separation and vibrational sublevels of the ground and excited states, and barrier height between these, have been determined. (Read more)
- 42. Jpn. J. Appl. Phys. 20(Suppl.20-1), 261 (1981) , “Isothermal Capacitance Transient Spectroscopy ”, Hideyo Okushi and Yozo TokumaruA new measurement method for deep levels in semiconductors is demonstrated, by which the measurement of the transient charge of capacitance is performed under an isothermal condition (IsothermalCapacitance Transient Spectroscopy). The method allows us to construct a precise measurement and analysis system by a programmable calculator. Detailed experiment and analysis by the method in the case of Au-doped Si indicate that the method is one of useful tools for spectroscopic analysis of deep levels in semiconductors. (Read more)
- 43. J. Phys. Soc. Jpn. 41, 711 (1976) , “Electron Spin Relaxation Time of Phosphorus-Doped Silicon”, H. Nagashima, H. Yamazaki.The decay time of induced magnetization Mz of donor electrons is observed for (Si:P) samples having impurity concentrations 5.6×1017 ≤ Nd 2.7×1018 donors / cm3 in the 1.2-4.2 K temperature range. The results show that the spin-lattice relaxation time T1 increases with increasing donor concentration and becomes so close to the spin-spin relaxation time T2 in the intermediate concentration region of transport phenomena. (Read more)
- 44. Jpn. J. Appl. Phys. 46, L57 (2007) , “Synthesis and Characterization of Pt/Co–O/Pt Trilayer Exhibiting Large Reproducible Resistance Switching”, Hisashi Shima, Fumiyoshi Takano, Yukio Tamai, Hiro Akinaga, and Isao H. Inoue.The resistance switching in Pt/Co–O/Pt trilayers has been successfully demonstrated. The trilayers were prepared by radio-frequency magnetron sputtering. The partial pressure of oxygen during sputtering and the post thermal process for the trilayer are crucial to realize the reproducible resistance switching. By adjusting oxygen partial pressure as well as post-annealing temperature and time, large resistance switching was steadily obtainable in both the as deposited and post-annealed Pt/Co–O/Pt trilayers. The resistance switching ratio exceeds 103, being sufficiently large for the resistance random access memory (RRAM). Co–O is regarded as a very promising oxide for RRAM having compatibilities with the conventional complementary metal–oxide semiconductor process. (Read more)
- 45. AIP Conf. Proc. 772, 147 (2005) , American Institute of Physics , “Deep levels in osmium doped p-type GaAs grown by metal organic chemical vapor deposition”, M. Zafar Iqbal, A. Majid, A. Dadgar, and D. BimbergResults of a preliminary study on deep level transient spectroscopy (DLTS) investigations of osmium (Os) impurity in p-type GaAs, introduced in situ during MOCVD crystal growth, are reported for the first time. Os is clearly shown to introduce two prominent deep levels in the lower half-bandgap of GaAs at energy positions Ev + 0.42 eV (OsA) and Ev + 0.72 eV (OsB). A minority-carrier emitting defect feature observed in the upper half-bandgap is shown to consist of a band of Os-related deep levels with a concentration significantly higher than that of the majority carrier emitting deep levels. Detailed data on the emission rate signatures and related parameters of the Os-related deep levels are reported. ©2005 American Institute of Physics (Read more)
- 46. AIP Conf. Proc. 772, 143 (2005) , American Institute of Physics , “Deep levels in Ruthenium doped p-type MOCVD GaAs”, A. Majid, M. Zafar Iqbal, A. Dadgar, and D. BimbergRuthenium is introduced into GaAs during epitaxial growth by MOCVD. Preliminary results of DLTS investigation of the defect states associated with this 4d transition-metal impurity are reported for the first time. At least three deep levels are identified with Ru in the lower half-bandgap of GaAs at energy positions Ev + 0.38 eV, Ev + 0.52 eV and Ev + 0.65 eV, the last with a relatively higher concentration than the first two. At least one Ru-related deep level is observed in the upper half-bandgap at Ec – 0.66 eV with a significantly high concentration. Emission rate signatures and associated characteristics of all these defect levels are reported. The Ev + 0.65 eV level is found to exhibit an electric field dependent thermal emission characteristic. ©2005 American Institute of Physics (Read more)
- 47. Nature 210, 1037 (1966) , “Electron Spin Resonance Spectra associated with Nitrogen in Diamonds”, H. J. Bower, M. C. R. SymonsMANY diamonds show an electron spin resonance spectrum which has been attributed to the presence of single nitrogen atoms substituted for carbon at a diamond lattice site. Smith etal.1 found four types of nitrogen donors, equally abundant and differing only in their hyperfine axes, these being the four C–N bond directions. They measured the hyperfine coupling constants for 14N(I=1), and for 13C(I = ½) in the nearest neighbour positions (denoted centre I). Loubser and du Preez2 found additional lines in the spectrum, which they attributed to interaction of the unpaired electron with carbon-13 at other lattice sites (centres II, III and IV). The hyperfine coupling constants are recorded in Table 1, together with the orbital populations. These populations were obtained using values of |ψ2s(0)|2 and
-3>2p calculated from self-consistent-field atomic wave functions derived by Mayers and by Roothaan and Clementi (see ref. 3). (We have omitted any correction for the δ+ charge on nitrogen and the δ- charge on carbon: this would increase the spin density on carbon at the expense of the nitrogen.) (Read more) - 48. Phys. Solid State 40, 195 (1998) , “Depth Distribution of Point Defects in Si Bombarded by High-Energy N5+ and Si5+ Ions”, A. V. Dvurechenski?, A. A. Karanovich, R. Grtzschel, F. Herrmann, R. Kegler, A. V. Rybin.Electron spin resonance has been used to study the depth distribution of point defects in Si samples bombarded by N5+ (E=16 MeV) and Si5+ (E=26.8 MeV) ions at 175 and 300 K in the dose range (4–8)×1015 cm-2. It was established that unlike the implantation of moderate-energy Si ions (E ∼ 100 keV), the depth distributions of planar tetravacancies in samples bombarded by ions at 300 K under these conditions have two maxima. The experimental results indicate that the tetravacancy density maximum closer to the surface is formed as a result of secondary defect formation processes. No continuous amorphous layer was observed in the bulk of any of the Si samples. This experimental observation is evidence of defect annealing which takes place when high-energy ions are implanted in Si. (Read more)
- 49. Mater. Sci. Eng. C 25, 614-617 (2005) , “Incorporation of cobalt into ZnO nanoclusters”, Igor Ozerov, Françoise Chabre and Wladimir MarineThe structural, optical and magnetic properties of nanostructured ZnO films co-doped with cobalt and aluminium have been studied. The nanocrystalline films, with cluster sizes in range 50–100 nm, were deposited by pulsed laser ablation in a mixed atmosphere of oxygen and helium. The... (Read more)
- 50. Mater. Sci. Eng. B 124-125, 192 (2005) , “Effect of fluorine on boron thermal diffusion in the presence of point defects”, M.N.Kham and H.A.W.El Mubared and J.M.Bonar and P.AshuburnWith the increased interest in the use of fluorine co-implantation with boron for boron diffusion suppression in MOSFET devices, it is important to understand the mechanisms by which fluorine reduces boron diffusion. Mechanisms, such as B–F chemical reaction, vacancy–fluorine clusters and fluorine–interstitials interactions have been proposed in the literature. In this paper, a point defect injection is done to investigate the mechanism responsible for boron TED and thermal diffusion suppression in F+ and B+ implanted silicon. A 5 keV, 7 × 1012 cm-2 B+ implant into silicon is used which is typical for halo implants in n-MOS. Three F+ energies, 5, 50 and 185 keV, are used. It is followed by rapid thermal annealing at 900–1000 °C for different times in N2 for an inert anneal and O2 for injection of interstitial point defects from the surface. Fluorine profiles for samples implanted with 185 keV F+ and annealed in N2 show two fluorine peaks at ~Rpand~Rp/2. Under interstitial injection, the Rp/2 peak decreases in size and for long anneal times is completely eliminated, supporting an earlier claim that the Rp/2 peak is due to vacancy–fluorine clusters. The amount of suppression of both boron TED and thermal diffusion at 900 and 1000 °C anneal is correlated to the amount of fluorine remaining after anneal. (Read more)
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