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- 1. Jpn. J. Appl. Phys. 49, 071302 (2010) , “Deep-Level Transient Spectroscopy and Photoluminescence Studies of Formation and Depth Profiles of Copper Centers in Silicon Crystals Diffused with Dilute Copper”, Minoru Nakamura and Susumu MurakamiWe have observed the formation of the Cu centers in p-type Si crystals diffused with dilute Cu between 400 and 1000 °C by deep-level transient spectroscopy (DLTS) and photoluminescence methods. For the samples diffused below 800 °C, a DLTS Cu center denoted as the CuDLB center was... (Read more)
- 2. Microelectron. Reliability 46, 1 (2006) , “NBTI degradation: From physical mechanisms to modelling”,An overview of the evolution of transistor parameters under negative bias temperature instability stress conditions commonly observed in p-MOSFETs in recent technologies is presented. The physical mechanisms of the degradation as well as the different defects involved have been discussed according to a systematic set of experiments with different stress conditions. According to our findings, a physical model is proposed which could be used to more accurately predict the transistor degradation. Finally, based on our new present understanding, a new characterization methodology is proposed, which would open the way to a more accurate determination of parameter shifts and thus allowing implementing the degradation into design rules. (Read more)
- 3. IEEE Electron Device Lett. 25, 153 (2004) , “Evaluation of NBTI in HfO2 Gate-Dielectric Stacks With Tungsten Gates”,
- 4. Appl. Phys. Lett. 82, 269 (2003) , “Relationship between interfacial nitrogen concentration and activation energies of fixed-charge trapping and interface state generation under bias-temperature stress condition”,The influence of nitrogen concentration at a nitrided oxide/silicon interface on the activation energies of both near-interface fixed-charge trapping and interface state generation caused by negative bias temperature instability stress has been studied quantitatively. It is observed that the charge... (Read more)
- 5. Appl. Phys. Lett. 83, 1647 (2003) , “Dynamic recovery of negative bias temperature instability in p-type metal–oxide–semiconductor field-effect transistors”,An unexpected physical phenomenondynamic recovery of negative bias temperature instability (NBTI)is reported. NBTI degradation in p-type metaloxidesemiconductor field-effect transistors is significantly (by ~40%) reduced after stress interruption. NBTI recovery... (Read more)
- 6. Microelectron. Reliability 45, 71 (2005) , “A comprehensive model of PMOS NBTI degradation ”,Negative bias temperature instability has become an important reliability concern for ultra-scaled Silicon IC technology with significant implications for both analog and digital circuit design. In this paper, we construct a comprehensive model for NBTI phenomena within the framework of the standard reaction–diffusion model. We demonstrate how to solve the reaction–diffusion equations in a way that emphasizes the physical aspects of the degradation process and allows easy generalization of the existing work. We also augment this basic reaction–diffusion model by including the temperature and field-dependence of the NBTI phenomena so that reliability projections can be made under arbitrary circuit operating conditions. (Read more)
- 7. J. Appl. Phys. 94, 1 (2003) , “Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing”,We present an overview of negative bias temperature instability (NBTI) commonly observed in p-channel metaloxidesemiconductor field-effect transistors when stressed with negative gate voltages at elevated temperatures. We discuss the results of such stress on device and circuit... (Read more)
- 8. J. Appl. Phys. 100, 094108 (2006) , “The effect of interfacial layer properties on the performance of Hf-based gate stack devices”, G. Bersuker, C. S. Park, J. Barnett, P. S. Lysaght, P. D. Kirsch, C. D. Young, R. Choi, B. H. Lee, B. Foran, K. van Benthem, S. J. Pennycook, P. M. Lenahan, and J. T. RyanThe influence of Hf-based dielectrics on the underlying SiO2 interfacial layer (IL) in high-k gate stacks is investigated. An increase in the IL dielectric constant, which correlates to an increase of the positive fixed charge density in the IL, is found to depend on the starting,... (Read more)
- 9. Appl. Phys. Lett. 81, 2397-2399 (2002) , “Hydrogen redistribution induced by negative-bias-temperature stress in metal–oxide–silicon diodes”, Ziyuan LiuPoly-Si/SiO2/Si diodes in which oxides were grown thermally under wet oxidation conditions and subsequently treated by a post-oxidation anneal (POA) have been characterized electrically and chemically before and after applying negative-bias-temperature stress (NBTS). It was confirmed that... (Read more)
- 10. Appl. Phys. Lett. 76, 3771-3773 (2000) , “Do Pb1 centers have levels in the Si band gap? Spin-dependent recombination study of the Pb1 "hyperfine spectrum"”, Tetsuya D. Mishima and Patrick M. LenahanThe electronic properties of the (001) Si/SiO2 Pb1 defect are the subject of considerable controversy. We present spin-dependent recombination results which indicate most strongly that the Pb1 centers have levels in the Si band gap. Our... (Read more)
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