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Nitrogen donors in 6H-, 4H- and 3C-SiC were investigated using conventional electron paramagnetic resonance (EPR) and electron nuclear double resonance (ENDOR) and the experimental results are discussed. An attempt is presented to interpret the experimentally found large differences in hyperfine... (Read more)
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Investigations of nitrogen donors in 6H-, 4H- and 3C-SiC using conventional electron paramagnetic resonance (EPR), electron nuclear double resonance (ENDOR) and optical detection of EPR and ENDOR as well as optical absorption and emission spectroscopy are reviewed and critically discussed. An... (Read more)
- 3. Phys. Rev. 90, 988 (1953) , “Electron Spin Resonance in a Silicon Semiconductor”, A. M. Portis, A. F. Kip, C. Kittel, W. H. Brattain.We hava observed electron spin resonance absorption in the 9000Mc/sec range in a powdered n type silicon semiconductor specimen at temperatures between 4ºK and 300ºK.We belive this is the first occasion that electron spin resonance has been reported for a semiconductor.The preliminary... (Read more)
- 4. J. Chem. Phys. 21, 1688-1694 (1953) , “Dissociation, Chemical Exchange, and the Proton Magnetic Resonance in Some Aqueous Electrolytes”, H. S. Gutowsky and A. SaikaThe position of the proton magnetic resonance is concentration dependent in aqueous solutions of electrolytes yielding hydrogen containing ions. Chemical exchange averages the chemical shifts in the proton resonance position over the different chemical species. The averaged shifts observed are... (Read more)
- 5. Phys. Rev. 94, 1392 (1954) , “Spin Resonance of Donors in Silicon”, R. C. Fletcher, W. A. Yager, G. L. Pearson, A. N. Holden, W. T. Read, and F. R. MerrittResonance absorption belived associated with the spin of electrons bound to Group V donor atoms has been observed in several different examples of silicon.The absorption was measured on a Zeeman modulation spectrometer operating at a frequancy of 24000 Mc/sec.The samples were cut from single... (Read more)
- 6. Phys. Rev. 95, 1686 (1954) , “Electron Spin Resonance of an Impurity Level in Silicon”, A. Honig and A. F. KipThe saturation of the microwave transition J=0→1 of CH3Sl35 has been measured by the method of Baird and Bird1.The resulte constitute the first measurement on saturation of a rotational absorption line,all other microwave saturation measurements having been... (Read more)
- 7. Nature 173, 439 (1954) , “PARAMAGNETIC RESONANCE IN NEUTRON-IRRADIATED DIAMOND AND SMOKY QUARITZ”, Dr. J. H. E. Griffiths, J. Owen, I. M. WardThe nature of lattice defects in neutron-irradiated diamond is a problem of current interest. These defects are known to cause changes in some of the physical properties1 and give rise to a paramagnetic absorption spectrum. We have measured this spectrum in the temperature-range 20º-290ºK., using wave-lengths of 1-2 and 3-1 cm. There are many closely spaced lines, of which two main types can be distinguished. (Read more)
- 8. Phys. Rev. 98, 915 (1955) , “Theory of Donor States in Silicon”, W. Kohn, J. M. Luttinger.By using the recently measured effective masses for n-type Si, m1=0.98 m and m2=0.19 m, approximate solutions of the resulting effective mass Schroedinger equation are obtained. The accuracy of the solutions was tested in the limiting cases where... (Read more)
- 9. Phys. Rev. 103, 501 (1956) , “Polarization of Phosphorus Nuclei in Silicon”, G. Feher and E. A. GereIn the preceding Letter a scheme for polarizing unclei was described.This letter deals with the experimental verificationof the scheme. (Read more)
- 10. Phys. Rev. 103, 834 (1956) , “Observation of Nuclear Magnetic Resonances via the Electron Spin Resonance Line”, G. Feher.The double-frequency resonance method reported recently in connection with a unclear polarization schemehas been extended to observe unclear transitions and thereby determine hyperfine interactions and unclear g values. (Read more)
- 11. Solid State Physics 5, 258-319 (1957) , Academic Press, New York (Edited by F. Seitz, D. Turnbull) , “Shallow Impurity States in Silicon and Germanium”, W. KohnI. Introduction (p.258): II. Emprical Properties (p.261): 1. Energy Levels (p.261), a. Ionization Energies, b. Spectra of Excited States, 2. Spin Resonance (p.266), a. Electron Spin Resonance, b. Double Resonance, 3. Static Magnetic Susceptibility (p.271), III. Structure of Donor States (p.271): 4. Conduction Bands of Silicon and Germanium (p.271), a. Silicon, b. Germanium, 5. Effective Mass Theory of Donor States (p.274), a. Single Band Minimum at k=0, b. Several Conduction Band Minima, c. Matrix Elements for Radiative Transitions, 6. Numerical Results and Comparison with Experiments (p.285), a. Energy Levels, b. Wave Functions, 7. Corrections to the Effective Mass Formalism (p.289), a. General Considerations, b. Corrected Wave Functions, c. Comparison with Experiment, IV. Structure of Acceptor States (p.297): 8. Valence Bands of Silicon and Germanium (p.297), a. Silicon, b. Germanium, 9. Effective Mass Equations for Acceptor States (p.300), 10. Approximate Solutions and Comparison with Experiment (p.301) a. Germanium b. Silicon V.Effects of Strains and of Static Electric and Magnetic Fields (p.306): 11. Strains (p.306) a. Donor States, b. Acceptor States, 12. Stark Effect (p.311)
- 12. Phys. Rev. 106, 73 (1957) , “Effect of Heavy Doping on the Self-Diffusion of Germanium ”, M. W. Valenta and C. Ramasastry*The germanium self-diffusion coefficients for intrinsic, heavily-doped n- and p-type germanium were measured at several temperatures. It was found that the self-diffusion coefficient is greater for heavily-doped n-type than for intrinsic germanium and that the self-diffusion coefficient for... (Read more)
- 13. Phys. Rev. 107, 1462 (1957) , “Spin and Magnetic Moment of P32 by the Electron Nuclear Double-Resonance Technique”, G. Feher, C. S. Fuller, E. A. Gere.The spin and magnetic moment of 14-day P32 with dtermined by the electron unclear double resonance (ENDOR) technique.The P32 obtained from Oak Ridge was diffused into high-resistivity silicon plates having a total volume of 0.25 cm3. (Read more)
- 14. Phys. Rev. Lett. 1, 295 (1958) , “Spin of Fe57”, G. W. Ludwig, H. H. Woodbury, R. O. Carlson.The spin of the stable isotope Fe57 has been directly observed to be 1/2 from the electron spin resonance spectrum of iron-doped silicon.Samples were prepared by alloying several milligrams of ironenriched to contain 84.1% Fe57 onto silicon crystals 3mm×3mm×10mm.The iron was... (Read more)
- 15. Phys. Rev. 109, 1172 (1958) , “Hfs Anomaly of Sb121 and Sb123 Determined by the Electron Nuclear Double Resonance Technique”, J. Eisinger, G. Feher.The ratios of the hyperfine interaction constants "a" and the nuclear g factors of the stable isotopes of antimony have been measured. From these measurements the hyperfine structure anomaly, defined as ?=(a121/a123)(g123/g121)-1, was found to be... (Read more)
- 16. Phys. Rev. 109, 221 (1958) , “Spontaneous Emission of Radiation from an Electron Spin System”, G. Feher, J. P. Gordon, E. Buehler, E. A. Gere, and C. D. ThurmondIt was pointed out by Combrission,Honig,and Townes that under certain conditions energy which has been stored in a spin system may be spontaneously and coherently radiated into a resonant cavity at the Larmor precession frequency of the spins.In this note we wish to report the direct observation of... (Read more)
- 17. J. Appl. Phys. 29, 736-737 (1958) , “Silicon Crystals Free of Dislocations”, William C. DashEtching and copper decoration techniques have shown that silicon crystals grown from quartz crucibles under proper conditions contain no detectable dislocations.However,oxygen in concentration up to about 1018 per cm3incorporated from the quartz crucible might conceivably... (Read more)
- 18. Phys. Rev. Lett. 2, 39 (1959) , “ELECTRON SPIN RESONANCE OF ACCEPTOR STATES IN DIAMOND”, W. V. Smith, I. L. Gelles, and P. P. SorokinPrevious work reporting electron spin resonance in diamond has been concerned exclusively with paramagnetic centers produced by irradiation with fast neutrons. Using standard resonance techniques we have recently detected at room temperature a family of weak, narrow resonance lines near g=2... (Read more)
- 19. Phys. Rev. 114, 1219 (1959) , “Electron Spin Resonance Experiments on Donors in Silicon. I. Electronic Structure of Donors by the Electron Nuclear Double Resonance Technique”, G. Feher.The ground-state wave function of the antimony, phosphorus, and arsenic impurities in silicon has been investigated by means of the electron nuclear double resonance (ENDOR) method. By this method the hyperfine interactions of the donor electron with the Si29 nuclei situated at different... (Read more)
- 20. Phys. Rev. 114, 1245 (1959) , “Electron Spin Resonance Experiments on Donors in Silicon. II. Electron Spin Relaxation Effects”, G. Feher and E. A. GereThe different relaxation processes that connect the four energy levels in phosphorus doped silicon have been investigated experimentally. The relaxation time Ts (?ms=1, ?mI=0) was found to be independent of phosphorus concentration below ?1016... (Read more)
- 21. Phys. Rev. 115, 1546 (1959) , “Electron-Spin Resonance of Nitrogen Donors in Diamond”, W. V. Smith, P. P. Sorokin, I. L. Gelles, and G. J. LasherElectron-spin resonance of bound substitutional nitrogen donors in diamond is observed and discussed. The g factor is isotropic at 2.00240.0005. For a given donor, one of the C-N bond directions is a hyperfine axis with constants A=40.8 oersteds, B=29.2 oersteds. There are thus four types of... (Read more)
- 22. J. Phys. Chem. Solids 8, 490 (1959) , “Spin resonance of deep level impurities in germanium and silicon”, G. W. Ludwig, H. H. Woodbury and R. O. CarlsonElectron spin resonance measurements have been reported for nickel and manganesein germanium.We have been studying several deep level impurities in germanium and silicon be resonance tecniques,but only two system,nickel in germanium and manganese in silicon,will be discussed here. (Read more)
- 23. J. Appl. Phys. 30, 1195 (1959) , “Paramagnetic Resonance in Electron Irradiated Silicon”, G. Bemski.Electron spin resonance has been observed in n-type silicon irradiated with 0.5-Mev electrons. The particular resonance lines discussed here appear only in pulled crystals which contain about 1018 oxygen atoms per cm3. The lines do not appear in floating zone crystals... (Read more)Si| EPR electron-irradiation| A Oxygen Silicon pair(=2) vacancy .inp files: Si/V-O | last update: Takahide Umeda
- 24. J. Appl. Phys. 30, 1198 (1959) , “Spin Resonance in Electron Irradiated Silicon”, G. D. Watkins, J. W. Corbett, and R. M. WalkerThe spin resonance behavior in room temperature irradiated n-type silicon is observed to be significantly different for silicon grown in quartz crucibles from that grown by the floating zone method. The dominant spectrum in each is discussed. The defects giving rise to the spectra are... (Read more)
- 25. Phys. Rev. Lett. 5, 309 (1960) , “Paramagnetic Resonance Absorption from Acceptors in Silicon”, G. Feher, J. C. Hensel, and E. A. GereIn the past,several attempts to observe the paramagnetic absorption from acceptors in silicon were unsuccessful.The reasons for this failure were pointed out by Kohn and are associated with the degeneracy of the valence band in silicon.We wish to report in this Letter the observation of the... (Read more)
- 26. Phys. Rev. Lett. 5, 425 (1960) , “Resonant Spin-Spin Interaction between Donors and Acceptors in Silicon”, R. A. Levy.A reduction of the direct relaxation time of donor electrons in silicon,belived to be due to a resonant spin-spin interaction with a background acceptor resonance line,has been observed in compensated silicon containing approximately 5×1015 phosphorus donor/cm3 and... (Read more)
- 27. Phys. Rev. Lett. 5, 96 (1960) , “Vacancy Interactions in Silicon”, H. H. Woodbury and G. W. LudwigThe production and properties of vacancies in silicon are subjects upon which much empirical work has been done.For the most part the interpretation of the data in terms of detailed models has been inconclusive.Recently the interaction of radiation-induced defects(suggested to be vacancies)with... (Read more)
- 28. Phys. Rev. 117, 102 (1960) , “Spin Resonance of Transition Metals in Silicon”, H. H. Woodbury and G. W. LudwigSpin resonance measurements are reported for various charge states of four transition metals in silicon, namely for V++, Cr+, Mn-, Mn++, and Fe0. In each case the g tensor and the hyperfine interaction with the impurity nucleus are isotropic.... (Read more)Si| EPR| Iron Manganese Vanadium .inp files: Si/Mn- Si/Fe Si/Mn4 Si/Vanadium | last update: Masatoshi Sasaki
- 29. Phys. Rev. 117, 1286 (1960) , “Magnetic Moment of Fe57”, G. W. Ludwig, H. H. Woodbury.An electron-nuclear double resonance study has been made on the spectrum of neutral iron atoms in silicon. These measurements lead to a value of +0.09030.0007 nm for the magnetic moment of Fe57. (Read more)
- 30. Phys. Rev. 117, 1287 (1960) , “Magnetic Moment of Au197”, H. H. Woodbury, G. W. Ludwig.Chromium-gold and maganese-gold impurity pairs in silicon have been observed by electron spin resonance techniques. Electron-nuclear double resonance studies of the gold hyperfine structure lead to a value of 0.14390.0004 nm for the magnetic moment of Au197. (Read more)
- 31. Phys. Rev. 118, 939 (1960) , “Cross Relaxation Studies in Diamond”, P. P. Sorokin, G. J. Lasher, and I. L. GellesA microwave double resonance experiment performed on the paramagnetic nitrogen centers in diamond shows that in this system cross relaxation occurs via a four spin flip mechanism which exactly conserves Zeeman energy. In this process, which was first postulated by Bloembergen and co-workers in their... (Read more)
- 32. Phys. Rev. Lett. 7, 240 (1961) , “Splitting of Electron Spin Resonance Lines by an Applied Electric Field”, G. W. Ludwig and H. H. WoodburyNuclei or paramagnetic irons in many solids occupy sites which lack inversion symmetry. Bloembergen has recently called attention to the possibility of observing shifts, proportional to the applied electric field ε, in the energy levels of such systems. Consistent with Bloembergen's ideas,Kushida... (Read more)
- 33. Phys. Rev. Lett. 7, 314 (1961) , “Silicon Divacancy and Its Direct Production by Electron Irradiation”, J. W. Corbett and G. D. WatkinsTo date two defects produced in radiation damage of silicon hava been identified.These defects are a vacancy-oxygeon pair and a vacancy-phosphorous pair. They were identified largely by their associated electron spin resonance spectra and have been labeled the Si-A and Si-E... (Read more)Si| EPR electron-irradiation| G6 Silicon pair(=2) vacancy .inp files: Si/V2+ | last update: Takashi Fukushima
- 34. Phys. Rev. 121, 1001 (1961) , “Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-A Center”, G. D. Watkins, J. W. Corbett.The Si-A center is a major, radiation-damage defect produced in "pulled" silicon by a room temperature irradiation. As a result of studies described in this paper (I), and the following one (II), it is concluded that this center is a lattice vacancy with an oxygen atom impurity bridging two of the... (Read more)
- 35. Phys. Rev. 121, 1015 (1961) , “Defects in Irradiated Silicon. II. Infrared Absorption of the Si-A Center ”, J. W. Corbett, G. D. Watkins, R. M. Chrenko, and R. S. McDonaldThe Si-A center is a major, radiation-damage defect produced in "pulled" silicon by room temperature irradiation. In this paper (II), we present the infrared measurements which, in conjunction with the spin resonance measurements of the preceding paper (I), establish the identity of the Si-A center.... (Read more)
- 36. Phys. Rev. 124, 1068 (1961) , “Electron Spin Resonance Experiments on Donors in Silicon. III. Investigation of Excited States by the Application of Uniaxial Stress and Their Importance in Relaxation Processes”, D. K. Wilson, G. Feher.The excited states of the antimony, phosphorus, and arsenic impurities in silicon have been investigated by subjecting samples to a uniaxial stress and observing the change in the electron spin resonance spectrum. The experiments were performed at 1.25K and ?9000 Mc/sec on silicon samples subjected... (Read more)
- 37. J. Appl. Phys. 32, 1854 (1961) , “Paramagnetic Resonance of Defects Introduced Near the Surface of Solids by Mechanical Damage”, G. K. Walters and T. L. EstleElectron spin resonance characteristics of a number of materials subjected to violent mechanical treatment are reported. A line with g=2.0055 observed in silicon is attributed to defects introduced near the surface by mechanical damage. The resonance properties are uninfluenced by... (Read more)
- 38. J. Appl. Phys. 32, 1854 (1961) , “Paramagnetic Resonance of Defects Introduced Near the Surface of Solids by Mechanical Damage”, G. K. Walters and T. L. EstleElectron spin resonance characteristics of a number of materials subjected to violent mechanical treatment are reported. A line with g=2.0055 observed in silicon is attributed to defects introduced near the surface by mechanical damage. The resonance properties are uninfluenced by... (Read more)
- 39. Solid State Physics 13, 223-304 (1962) , Academic Press, New York (Edited by F. Seitz, D. Turnbull) , “Electron Spin Resonance in Semiconductors”, G. W. Ludwig, H. H. Woodbury.I. Introduction (p.223): II. The Resonance Technique (p.226): 1. The Spin Hamiltonian (p.226), 2. The Spin Resonance Spectrum (p.231), 3. Experimental Techniques (p.237), III. Resonance Studies in Silicon (p.243): 4. Shallow Donor Impurities (p.244), 5. Shallow Acceptor Impurities (p.259), 6. Transition Metal Ions (p.263), 7. Impurity Pairs (p.273), 8. Radiation Damage Centers (p.280), IV.Resonance Studies in Other Semiconductors (p.286): 9. Germanium (p.286), 10. Graphite and Diamond (p.290), 11. Silicon Carbide (p.293), 12. Indium Antimonide and Gallium Phosphide (p.294), 13. Zinc Sulfide and Related Semiconductors (p.295), Acknowledgments (p.304)
- 40. Phys. Rev. 126, 466 (1962) , “Spin Resonance of Pd and Pt in Silicon”, H. H. Woodbury and G. W. LudwigThe transition metals Pd and Pt usually occur in diamagnetic form. However, in silicon both Pd and Pt act as acceptor impurities; the ions Pd- and Pt- are paramagnetic and have been studied by electron spin resonance. Both ions have a [001] and two mutually perpendicular [110]... (Read more)
- 41. Phys. Rev. 128, 1605 (1962) , “Electron Spin Resonance in Neutron-Irradiated Silicon”, M. Nisenoff and H. Y. FanElectron spin resonance produced in silicon by fast neutron irradiation was studied. The temperature of the samples during the irradiation was about 50C. Different spectra were observed depending on the Fermi level in the irradiated sample. Samples with the Fermi level near the middle of the energy... (Read more)
- 42. Nature 194, 829 (1962) , “DIAMONDS CONTAINING CONTROLLABLE IMPURITY CONCENTRATIONS”, C. M. Huggins, P. CannonThe presence of cosiderable quantities of impurities in natural diamond has recently been confirmed1,2. This led Frank3 to remark that multiple techniques of examination must be used on such material. In view of the report of Yoneda4 concerning possible effects of nitrogen on the X-ray diffraction patterns of diamond, it seems worth-while to us to comment further on some of the results which we have gained by the deliberate introduction of a given impurity into laboratory-grown diamond. We shall limit ourselves to a qualitative examination of the electron spin resonance spectra of a few specimens, in the belief that the profundity of the effects suffices to establish that progress in this area is now limited by the composition variability of natural diamond. (Read more)
- 43. Phys. Rev. Lett. 10, 220 (1963) , “ELECTRON PARAMAGNETIC RESONANCE INVESTIGATION OF THE VACANCY IN DIAMOND”, John A. Baldwin, Jr.Griffiths, Owen, and Ward reported that diamonds exposed to reactor neutrons developed an intense isotropic electron paramagnetic resonance (EPR) absorption lone whose g value was very close to that of the free electron. They found that a similar line was produced by 1-MeV electrons. The work herein... (Read more)
- 44. Phys. Rev. 132, 648 (1963) , “Spin-1 Centers in Neutron-Irradiated Silicon”, Wun Jung and G. S. NewellElectron paramagnetic resonance was used to study a number of fast-neutron-induced defects formed in pile-irradiated silicon and to follow their concentrations as a function of annealing. Measurements were made at 300, 77, and 4.2K on samples which had attained intrinsic resistivity during... (Read more)
- 45. Nature 198, 981 (1963) , “Electron Spin Resonance in Neutron-irradiated Diamond”, E. A. Faulkner, E. W. J. Mitchell, P. W. WhippeyRecent work has shown that the nature of the electron spin resonance spectrum observed in irradiated diamond depends on the type and amount of irradiation. Faulkner and Lomer used comparatively heavy doses of 2-MeV electrons (up to 8×1019 electron cm-3) and distinguished four systems, all of which show a g-value which is isotropic and equal to the free-spin value within 0-2 per cent: (a) asingle line of width about 5 gauss; (b) a system of 24 lines with symmentry axes near the <221> directions, and a D-value of 0-14 cm-1; (c) a system of 6 lines with symmentry axes along the <100> directions and a D-value of 0-14 cm-1; (d) a broad absorption with a half-power width of about 70 gauss, showing a complicated anisotropic structure. (Read more)
- 46. J. Phys. Soc. Jpn. sppl. II, 18, 22 (1963) , “An EPR Study of the Lattice Vacancy in Silicon”, G. D. Watkins.An EPR spectrum is observed in silicon which is identified as arising from the isolated lattice vacancy. It is observed in p-type silicon which has been irradiated in situ at~40ºK by 1.5 Mev electrons. A simple molecular orbital treatment of the vacancy is outlined which describes many of the features of the spectrum and predicts the observed anisotrophy as resulting from a Jahn-Teller distortion. Studies of the disappearance of the vacancy vs anneal are described and interpreted in terms of long range migration of the vacancy and subsequent trapping by other defects. The activation energy for vacancy motion is determined to be 0.33±.03 ev in p-type material. Further study is required in n-type silicon before an unambiguous interpretation of the emergence of vacancy-impurity pairs can be made.
- 47. J. Phys. Chem. Solids 24, 1 (1963) , “A new paramagnetic center in electron irradiated silicon*1”, G. Bemski, B. Szymanski.Electron irradiation of silicon produces paramagnetic centers in n-type silicon. Experiments are described in which a new paramagnetic center is observed. In contrast to the two previously studied centers, electrons of 0.5 MeV energy do not produce the new center. The dependence of the rate of... (Read more)
- 48. J. Phys. Chem. Solids 24, 1467 (1963) , “Spin and combined resonance on acceptor centres in Ge and Si type crystals—I Paramagnetic resonance in strained and unstrained crystals”, G. L. Bir, E. I. Butikov, G. E. Pikus.A theory of paramagnetic resonance on acceptor centres in deformed and non-deformed Ge and Si type crystals is developed. The splitting of the ground state under the action of the deformation and magnetic field is determined and the probability of transitions between levels is estimated. Using the... (Read more)
- 49. Solid-State Electronics 7, 811 (1964) , “Permanent degradation of GaAs tunnel diodes*1”, Robert D. Gold, Leonard R. WeisbergPermanent degradation of GaAs tunnel diodes is observed during normal operation at room temperature. This degradation is characterised by a large decrease in peak current, and is quantitatively correlated with a widening of the junction space charge region. The degradation is caused by the flow of... (Read more)
- 50. Phys. Rev. 133, A1163 (1964) , “Optical Properties of Cubic SiC: Luminescence of Nitrogen-Exciton Complexes, and Interband Absorption”, W. J. Choyke, D. R. Hamilton, and Lyle PatrickAbsorption measurements of cubic SiC at 4.2K show that the absorption edge is due to indirect, exciton-creating transitions, with an exciton energy gap of 2.390 eV. The energies of the phonons participating in these transitions are 46, 79, 94, and 103 meV, and suggest that the conduction-band... (Read more)
- 51. Phys. Rev. 134, A1359 (1964) , “Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-E Center”, G. D. Watkins, J. W. Corbett.The Si-E center is one of the dominant defects produced by electron irradiation in phosphorus-doped vacuum floating zone silicon. It introduces an acceptor level at ?(Ec-0.4) eV and gives rise to an electron paramagnetic resonance when this level does not contain an electron. As a result... (Read more)
- 52. Phys. Rev. 134, A265 (1964) , “Electron Spin Resonance Experiments on Shallow Donors in Germanium”, D. K. WilsonAt liquid helium temperatures, spin resonance of localized donor electrons has been observed in phorphorus-, arsenic-, and bismuth-doped germanium. The presence of hyperfine splitting confirms the singlet as the ground state for all three. The separation of the excited triplet states has been... (Read more)
- 53. Phys. Rev. 135, A1381-A1385 (1964) , “New Oxygen Infrared Bands in Annealed Irradiated Silicon”, J. W. Corbett, G. D. Watkins, and R. S. McDonaldInfrared and electron-spin-resonance measurements on the recovery of silicon irradiated with 1.5-MeV electrons are presented. In the infrared measurements the disappearance of the previously reported 829-cm-1 (12?) oxygen vibration band is followed, and the appearance and subsequent... (Read more)
- 54. J. Appl. Phys. 35, 379-397 (1964) , “Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium Arsenide”, R. N. Hall and J. H. RacetteThe solubilities of substitutional and interstitial copper (Cus and Cui) have been measured in intrinsic and extrinsic n- and p-type Ge, Si, and GaAs, using Cu64. These measurements show that Cus is a triple acceptor in... (Read more)
- 55. Sov. Phys. Solid State 6, 2460 (1965) , “DISTRIBUTION OF PARAMAGNETIC NITROGEN CENTERS IN SOME TYPE-I DIAMONDS”, N. D. Samsonenko
- 56. Solid State Commun. 3, 307 (1965) , “EXCHANGE INTERACTION EFFECTS IN THE E.S.R. SPECTRUM OF SUBSTITUTIONAL NITROGEN IN DIAMOND”, J. H. N. Loubser, W. P. van Ryneveld and L. du PreezThe E.S.R. lines due to substitutional nitrogen in synthetic diamond powders, heavily doped with nitrogen, were found to exhibit the characteristic features of exchange interaction. In the coats of natural diamonds additional lines due to exchange interaction between triads of nitrogen atoms were... (Read more)
- 57. Solid State Commun. 3, 357 (1965) , “Elektronenspin-Resonanz in Verformtem Silizium”, H. Alexander, R. Labusch and W. SanderBei 800°C verformte Silizium-Kristalle zeigen ein Elektronenspinresonanz-Signal, dessen Intensität mit der Versetzungsdichte zunimmt. Wir vermuten, daβ dieses Signal von ungepaarten Elektronen im Kern von Versetzungen stammt. Durch die Verformung wird die Bildung von Atomgruppen in... (Read more)
- 58. Radiation Damage in Semiconductors 97-113 (1965) , Dunod, Paris , “A Review of EPR Studies in Irradiated Silicon”, G. D. Watkins.1. INTRODUCTION (p.97): 2. THE EPR EXPERIMENT (p.97): 3. RESULTS (p.99): A. The lattice Vacancy (p.99), B. Vacancies Trapped by Other Defects (p.102), C. Vacancy Motion (p.103), D. Interstitial Defects (p.103), E. Other Spectra (p.105), 4. SUMMARY AND CONCLUSION (p.110): 5.ACKNOWLEDGMENTS (p.110):
- 59. Phys. Rev. Lett. 15, 667 (1965) , “Effect of Spin Resonance on Hot Electrons by Spin-Orbit Coupling in n-Type InSb ”, M. Guéron and I. SolomonWe have observed the magnetic resonance of conduction electrons in n-type indium antimonide, by the "heating" of the electron kinetic-energy temperature via the electron spins. This is the first direct evidence suggesting a contribution of spin-orbit coupling to relaxation in this system. In... (Read more)
- 60. Phys. Rev. 137, A1520 (1965) , “Paramagnetic Resonance Study of a Deep Donor in Silicon”, G. W. Ludwig.The impurity sulfur acts as a double donor in silicon. Assuming the ion to be substitutional, S+ is analogous to neutral phosphorus, except that the binding energy of the donor electron is much greater. Here we report paramagnetic resonance absorption of S+, including a... (Read more)Si| EPR| Iron S Sulfur U donor n-type .inp files: Si/Sulfur Si/FeS Si/Sulfur2 Si/Sulfur3 | last update: Takahide Umeda
- 61. Phys. Rev. 138, A543 (1965) , “Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the Divacancy”, G. D. Watkins and J. W. CorbettTwo electron paramagnetic resonance spectra produced in silicon by 1.5-MeV electron irradiation are described. Labeled Si-G6 and Si-G7, they are identified as arising from the singly positive and singly negative charged states of the divacancy, respectively. The observed hyperfine interactions with... (Read more)
- 62. Phys. Rev. 138, A555 (1965) , “Production of Divacancies and Vacancies by Electron Irradiation of Silicon”, J. W. Corbett and G. D. WatkinsA study is described of the dependence of the room-temperature production of divacancies and vacancies in silicon upon the energy of the bombarding electrons over the range 0.7-56 MeV. For the divacancy, the Si-G6 electron-paramagnetic-resonance spectrum associated with the singly positively charged... (Read more)
- 63. J. Phys. Soc. Jpn. 20, 1447 (1965) , “Electron Spin Resonance in Phosphorus Doped Silicon at Low Temperatures”, S. Maekawa, N. Kinoshita.Effects of exchange and motion on electron spin resonance spectrum of phosphorus doped Si with concentration of 3×1016cm-3~3×1019cm-3 were investigated at liquid helium temperatures and at about 9300 Mc/sec. At lower concentrations, the intensity of... (Read more)
- 64. J. Chem. Phys. 42, 1898 (1965) , “Irradiation Damage in Type I Diamond”, H. B. Dyer and L. du PreezIn addition to the GRI and uv bands induced in all diamond by 0.78-MeV electron irradiation, another optical absorption feature, which we have named the ND1 band, is found in all Type I diamonds. A single EPR line appears to be associated with the ND1 band.It is suggested that the ND1 center arises... (Read more)
- 65. Brit. J. Appl. Phys. 16, 457 (1965) , “New lines in the electron spin resonance spectrum of substitutional nitrogen donors in diamond”, J. H. N. Loubser, L. du PreezThe electron spin resonance lines of nitrogen impurity in diamond found by Smith, Sorokin, Gelles and Lasher have been re-examined in special samples and at low energy densities. (Read more)
- 66. Surf. Sci. 5, 267-282 (1966) , “Electron paramagnetic resonance study on silicon, germanium, and gallium arsenide surfaces interacting with adsorbed oxygen*1”, P. Chan , A. SteinemannWhen exposed to various oxygen containing gases, powdered samples of Si, Ge, InAs, and GaAs show an EPR signal at g = 2.0027. Adsorption of gaseous mixtures containing oxygen broadens the line. This is attributed to dipolar interaction between the paramagnetic centres created below the semiconductor... (Read more)
- 67. Phys. Rev. Lett. 16, 890 (1966) , “Method for Determining Silicon Diffusion Coefficients in Silicon and in Some Silicon Compounds ”, R. N. GhoshtagoreSelf-diffusion data in silicon are of considerable interest for a fuller understanding of diffusion mechanism operating in group-IV semiconductors. But due to the unavailability of any suitable experimental tehnique no direct measurement has been possible so far. Different authors have predicted... (Read more)
- 68. Phys. Rev. Lett. 17, 428 (1966) , “Direct Observation of Lithium-Defect Interaction in Silicon by Electron Paramagnetic Resonance Measurements”, Bernard GoldsteinElectron paramagnetic resonance measurements have been used to observe directly the interaction of lithium with damage centers produced by electron irrsadiation in n-type, floatzone silicon. The silicon is characterized by low oxygen concentrations, with lithium as the predominant... (Read more)
- 69. Phys. Rev. 149, 687 (1966) , “Electron Paramagnetic Resonance and Electrical Properties of the Dominant Paramagnetic Defect in Electron-Irradiated p-Type Silicon”, N. Almeleh, B. Goldstein.Lattice defects having strong paramagnetic resonances are introduced into p-type silicon that has been bombarded with electrons. We have studied the paramagnetic properties and growth of the dominant defect so introduced (the K center) as functions of electron flux and bombardment energy under... (Read more)
- 70. Phys. Rev. 152, 761 (1966) , “1.8-, 3.3-, and 3.9-μ Bands in Irradiated Silicon: Correlations with the Divacancy”, L. J. Cheng* and J. C. Corelli and J. W. Corbett and G. D. WatkinsThe annealing behavior and the uniaxial stress response of the radiation-induced defects causing the 1.8-, 3.3-, and 3.9-μ infrared absorption bands were studied after 45-MeV-electron and fast-neutron irradiation. The results indicate that these three bands all arise from the same defect. The... (Read more)
- 71. Nature 210, 1037 (1966) , “Electron Spin Resonance Spectra associated with Nitrogen in Diamonds”, H. J. Bower, M. C. R. SymonsMANY diamonds show an electron spin resonance spectrum which has been attributed to the presence of single nitrogen atoms substituted for carbon at a diamond lattice site. Smith etal.1 found four types of nitrogen donors, equally abundant and differing only in their hyperfine axes, these being the four C–N bond directions. They measured the hyperfine coupling constants for 14N(I=1), and for 13C(I = ½) in the nearest neighbour positions (denoted centre I). Loubser and du Preez2 found additional lines in the spectrum, which they attributed to interaction of the unpaired electron with carbon-13 at other lattice sites (centres II, III and IV). The hyperfine coupling constants are recorded in Table 1, together with the orbital populations. These populations were obtained using values of |ψ2s(0)|2 and
-3>2p calculated from self-consistent-field atomic wave functions derived by Mayers and by Roothaan and Clementi (see ref. 3). (We have omitted any correction for the δ+ charge on nitrogen and the δ- charge on carbon: this would increase the spin density on carbon at the expense of the nitrogen.) (Read more) - 72. Nature 210, 692 (1966) , “DISTRIBUTION OF SUBSTITUTIONAL NITROGEN DONORS IN SYNTHETIC DIAMONDS”, M. J. A. Smith, B. R. Angel, R. G. EmmonsConsiderable attention has been devoted to the study of nitrogen impurity in natural diamonds using the technique of electron spin resonance1-3. The spectrum obtained in due to the unpaired electron provided by the substitutional nitrogen atom and the main feature is a triplet at g = 2.0024 caused by interaction with the nitrogen nucleus which has a spin of unity. The distribution of nitrogen is variable and would seem to depend on the method by which the diamond was formed. (Read more)
- 73. Jpn. J. Appl. Phys. 5, 333 (1966) , “Electron Spin Resonance in SiO2 Grown on Silicon”, Y. NishiRecently there has been much interest in the behavior of space charge in SiO2 on silicon. Based on the generation and motion of charged species,structural models have been proposed by Seraphimet al. and by Revesz. In the present study electron spin resonance absorption has been... (Read more)
- 74. J. Catalysis 5, 314-324 (1966) , “ESR investigation of gas-solid interactions* The oxygen-zinc oxide system”, K.M. SancierESR measurements were combined with determinations of the amount of oxygen adsorbed or desorbed on ZnO in order to investigate the relationship between the solid state electronic properties of a semiconductor catalyst and the amounts and the nature of the adsorbed oxygen species. (Read more)
- 75. J. Catalysis 6, 411-418 (1966) , “Radiation-induced catalytic conversions : Organic compounds adsorbed on solids of different electronic properties”, G. M. Zhabrova, V. I. Vladimirova, B. M. Kadenatsi, V. B. Kazanskii , G. B. PariiskiiThe low-temperature radiation-induced conversions of methanol and cyclohexane adsorbed on solids were investigated. The solids used were dielectrics (SiO2, silica-alumina, Al2O3, KF), semiconductors (ZnO, NiO), and metals (Pt, Pd). The samples were irradiated by γ-rays from Co60 at a dose rate... (Read more)
- 76. Appl. Phys. Lett. 8, 280 (1966) , “SILICON SELF-DIFFUSION”, B. J. Masters and J. M. FairfieldThe process of self-diffusion within the silicon lattice is of considerable interest, not only for the development of diffusion theory, but also because of the limitation it imposes upon the fabrication of semiconductor devise structures. Several authors have estimated the activation energy of... (Read more)
- 77. Sov. Phys. Solid State 8, 1842 (1967) , “REORIENTATION OF THE JAHN-TELLER DISTORTION IN NITROGEN IMPURITY CENTERS IN DIAMOND”, L. A. Shulman, I. M. Zaritskii, G. A. Podzyarei
- 78. Phys. Rev. 155, 802 (1967) , “Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Aluminum-Vacancy Pair”, G. D. Watkins.An EPR spectrum produced in aluminum-doped silicon by 1.5-MeV electron irradiation is described. Labeled Si G9, it is identified as arising from an aluminum-vacancy pair, presumably formed when a mobile lattice vacancy is trapped by substitutional aluminum. The resonance is observed only upon... (Read more)
- 79. Phys. Lett. A 25, 726 (1967) , “Die bildung paramagnetischer zentren längs der reichweite von protonen in silizium”, H. Lütgemeier and K. SchnitzkeA new isotropic center S2 is observed at the end of the range of photons in silicon. By etching the irradiated samples in steps of a few microns, the dependency of the production rate of the centers S1, S2, P1 and P3 was investigated. (Read more)
- 80. Phys. Lett. 25A, 232 (1967) , “Paramagnetic Centres in Proton-Irradiated Silicon”, H. Lütgemeier and K. SchnitzkeAs in the case of neutron irradiation P1, P3 and P6 centres occur in silicon after irradiation with protons of 3 MeV. A new centre is observed which is axially symmetric along the [111] axis and has the eigenvalues g|| = 2.0010 and g = 2.0103. (Read more)
- 81. J. Catalysis 9, 331-335 (1967) , “ESR evidence of CO oxidation by more than one oxygen species sorbed on ZnO”, Kenneth M. SancierAn approach is described for investigating the nature of sorbed oxygen species on a semiconductor catalyst surface and for determining their relative reactivities in a heterogeneous oxidation reaction. Experimental information as to the types of oxygen species on ZnO with presorbed oxygen, ZnO... (Read more)
- 82. J. Appl. Phys. 38, 2433 (1967) , “Effect of Impurities on the Annealing Behavior of Irradiated Silicon”, Mitsuji Hirata, Masako Hirata, and Haruo Saito and James H. Crawford, Jr.The effect of impurities on the annealing behavior of irradiated silicon was studied through an investigation of isothermal annealing of minority carrier lifetime in silicon crystals containing phosphorus, arsenic, antimony, or bismuth in the temperature range 100°180°C. The activation... (Read more)
- 83. J. Appl. Phys. 38, 3148 (1967) , “Self-Diffusion in Intrinsic and Extrinsic Silicon”, J. M. Fairfield and B. J. MastersSilicon self-diffusion coefficients were determined by studying the diffusion of 31Si into silicon crystals of various degrees of perfection and doping. For intrinsic silicon, the self-diffusion coefficient can be represented by D=9,000 exp (5.13 eV/kT)... (Read more)
- 84. J. Appl. Phys. 38, 337 (1967) , “Electron Spin Resonance in Semiconducting Diamonds”, M. D. BellElectron spin resonance (ESR) was studied in five semiconducting diamonds in the temperature range 108°370°K and at 4.2°K. The g factor is 2.0030±0.0003, and the linewidth varies from 0.3 to 8 Oe at room temperature. The number of spins contributing to the ESR... (Read more)
- 85. Brit. J. Appl. Phys. 18, 1029 (1967) , “The dynamic Jahn - Teller and other effects in the high-temperature electron spin resonance spectrum of nitrogen in diamond”, J. H. N. Loubser, W. P. van RyneveldThe re-orientation of the Jahn-Teller distortion of the C-N bond in diamond containing substitutional nitrogen was observed, through its effect on shape of the hyperfine lines of the nitrogen electron spin resonance spectrum, in the range 600-1230°K. The weak satellite lines due to... (Read more)
- 86. Sov. Phys. Solid State 9, 1545 (1968) , “EXCHANGE PAIRS OF NITROGEN IMPURITIES IN DIAMOND”, L. A. Shulman, I. M. Zaritskii, K. A. Tikhonenko
- 87. Sov. Phys. Semicond. 2, 688 (1968) , “Electron Paramagnetic Resonance of Boron in Dislocation-Free Silicon Crystals”, B. G. Zhurkin, N. A. Penin, N. N. Sibeldin.A study was made of the dependence of the EPR line of boron in uncompensated p-type silicon on the uniaxial compression, the concentration of boron in dislocation-free crystals, and on the dislocation density. It was found that an increase in the concentration of boron from 2・1016 to 1.5・1018 cm-3 broadened the resonance line. When the dislocation density was increased from zero to 2・105 cm-2, the resonance line broadened to more than twice its original width. The experiments were carried out at T = 4.2ºK and the compressive forces were applied along the [111] and [110]. The line width was practically independent of the direction of compression. The results obtained were in qualitative agreement with the theory.
- 88. Solid State Commun. 6, 457-459 (1968) , “The cubic field parameter of ions in zinc oxide crystals”, A. HausmannZnO single crystals doped with Fe3+ or Mn2+ have been investigated by ESR at 35 kMc/s. The cubic field parameter |a| has been determined with greater accuracy than before. The values are |a| = 7.1 G and |a| = 46.8 G for Mn2+ and Fe3+ respectively. Further, considerations about the macroscopic... (Read more)
- 89. Phys. Rev. 170, 705 (1968) , “Electron Paramagnetic Resonance from Clean Single-Crystal Cleavage Surfaces of Silicon”, D. Haneman.EPR measurements have been made on aligned cleavage faces of Si, prepared and studied in high vacuum (<10-9 Torr). The signal, observable after accumulation, is a single line at g=2.0055 with width 6 G, similar to that from vacuum-crushed powders. It is unaffected by oxygen exposures... (Read more)
- 90. Phys. Rev. 174, 881 (1968) , “Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Arsenic- and Antimony-Vacancy Pairs”, Edward L. Elkin and G. D. WatkinsTwo EPR spectra are observed in irradiated silicon (designated Si-G23 and Si-G24) which are identified with the neutral charge states of a lattice vacancy adjacent to a substitutional arsenic or antimony atom, respectively. EPR and ENDOR studies reveal a high degree of similarity between these... (Read more)
- 91. J. Phys. Chem. Solids 29, 1369-1375 (1968) , “Paramagnetic resonance of ZnO:Mn++ single crystals”, A. Hausmann , H. HuppertzZnO single crystals doped with Mn++ have been investigated by ESR at 9.5 and 35 kMc/s. The measured spectra show minimal linewidth of 0.25 G. The resonances can theoretically be described by a spin Hamiltonian of axial symmetry of which the parameters have been determined with great accuracy.... (Read more)
- 92. J. Phys. Chem. Solids 29, 1407-1429 (1968) , “The structure of the paramagnetic lithium center in zinc oxide and beryllium oxide”, O. F. SchirmerIf ZnO and BeO crystals containing Li are irradiated with u.v. or X-rays, a paramagnetic defect center is created consisting of a hole captured at an O2− ion next to a substitutional Li+ impurity. Because of the polarity of the crystals, the hole assumes its lowest energy, if the... (Read more)
- 93. J. Catalysis 11, 317-325 (1968) , “ESR studies on ZnO---Cr2O3 catalysts”, M. RlekW. Gunsser , A. KnappwostThe effects of the conditions of preparation of ZnO---Cr2O3 catalysts on their ESR spectra have been investigated by means of a Q-band spectrometer. The linewidths of oxides prepared by a low-temperature decomposition of the respective hydroxides in nitrogen flow are large and exhibit concentration... (Read more)
- 94. J. Catalysis 12, 278-280 (1968) , “An ESR investigation of nitrobenzene adsorbed on zinc oxide”, V. V. Subba Rao, R. D. Iyengar and A. C. ZettlemoyerAn ESR study of the interaction of nitrobenzene with nonstoichiometric ZnO surfaces was made. A 3-line spectrum with g values 1.9840, 2.0055 and 2.0225 was observed and was identified as due to nitrobenzene anion radicals strongly held to the surface. An unidentified signal at g = 2.0050 was left... (Read more)
- 95. Surf. Sci. 13, 251-262 (1969) , “ESR studies of the interaction of O2, NO2, N2O, NO and Cl2 with zinc oxide”, R. D. Iyengar, V. V. Subba Rao , A. C. ZettlemoyerAn electron spin resonance study of the surface interaction of zinc oxide with oxygen, oxides of nitrogen (NO2, NO and N2O) and chlorine was made. Characteristic spectra obtained following adsorption of NO2 and NO were analyzed and attributed to rigidly adsorbed neutral molecules. Confirmation of... (Read more)
- 96. Sov. Phys. Solid State 10, 1789 (1969) , “THE STATE OF NITROGEN IMPURITIES IN SYNTHETIC DIAMONDS”, E. V. Sobolev, Yu. A. Litvin, N. D. Samsonenko, V. E. Ilin, S. V. Lenskaya, V. P. Butuzov
- 97. Sov. Phys. Solid State 11, 1104 (1969) , “ELECTRON PARAMAGNETIC RESONANCE OF IONIZED NITROGEN PAIRS IN DIAMOND”, M. Ya. Shcherbakova, E. V. Sobolev, N. D. Samsonenko, V. K. Aksenov
- 98. Solid State Commun. 7, 579-583 (1969) , “Paramagnetic resonance of Gd3+ in ZnO”, A. HausmannZnO single crystals doped with Gd3+ by diffusion have been investigated by ESR at 35kMc/s. The spectra can be understood by a spin-Hamiltonian of axial symmetry. Further, a hyperfine interaction with odd Gd isotopes has been detected. An asymmetry of one set of finestructure lines indicates a... (Read more)
- 99. Solid State Commun. 7, 651-655 (1969) , “Elektronenspinresonanz an kupferdotierten ZnO-einkristallen”, I. Broser and M. SchulzESR-Untersuchungen wurden an ZnO:Cu-Einkristallen zwischen 4,2 und 1,5°K durchgeführt. Die den natürlich vorkommenden Isotopen 63Cu und 65Cu entsprechenden Hyperfeinstrukturlinien hatten eine deutlich geringere Linienbreite verglichen mit bisherigen Messungen. Die... (Read more)
- 100. Solid State Commun. 7, ⅱ‐ⅲ (1969) , “ESR-resonance in doped GaAs and GaP”, S. Haraldson , C-G Ribbing
- 101. Solid State Commun. 7, ii-iii (1969) , “ESR-resonance in doped GaAs and GaP”, S. Haraldson , C-G RibbingESR-signals from GaP:Sn, GaP:Si and GaAs:Si, GaAs:Te are reported. GaP:Sn crystals give two Isotropie signals. The larger one of them with g-value 1.998 is attributed to bound donor electrons. No definite conclusion about the origin of the other line with g = 2.131 is presented. The system... (Read more)
- 102. Phys. Rev. Lett. 23, 581 (1969) , “Electron Spin Resonance in Amorphous Silicon, Germanium, and Silicon Carbide”, M. H. Brodsky and R. S. TitleThe g values, line shapes, and linewidths of the ESR signals from within the bulk of amorphous silicon, germanium, and silicon carbide are found to be similar to those of the electron states observed in the surface regions of the corresponding crystalline forms. Discussion is given in terms of a... (Read more)Ge Si SiC| EPR| Carbon D Germanium Silicon amorphous dangling-bond .inp files: Si/amorphous | last update: Takahide Umeda
- 103. Phys. Rev. 184, 739 (1969) , “Shallow Donor Electrons in Silicon. I. Hyperfine Interactions from ENDOR Measurements”, Edward B. Hale and Robert Lee MieherThe hyperfine interactions of Si29 lattice nuclei with ground-state donor electrons in arsenic-, phosphorus-, and antimony-doped silicon have been measured by electron-nuclear double resonance (ENDOR). Hyperfine constants are reported for each donor for about 20 shells containing a total... (Read more)
- 104. J. Phys. Chem. Solids 30, 2419-2425 (1969) , “ESR-resonances in doped GaAs and GaP*1”, S. Haraldson , C-G. RibbingESR-signals from GaP:Sn, GaP:Si and GaAs:Si, GaAs:Te are reported. GaP:Sn crystals give two Isotropie signals. The larger one of them with g-value 1.998 is attributed to bound donor electrons. No definite conclusion about the origin of the other line with g = 2.131 is presented. The system GaP:Si... (Read more)
- 105. J. Appl. Phys. 40, 3879 (1969) , “Three New Electron Spin Resonance Centers in Electron-Irradiated Silicon”, H. Horiye and E. G. WiknerElectron spin resonance (ESR) has been effectively used to study irradiation effects in silicon crystals. A good review paper on this subject is that of Watkins in which he lists 27 centers observed in irradiatedsilicon. The present paper describes three more centers which have not previously been... (Read more)
- 106. J. Appl. Phys. 40, 4902 (1969) , “EPR Study of Lithium-Diffused, Mn-Doped GaAs”, Reuben S. TitleAn EPR study of the Mn spectra in Li-diffused Mn-doped GaAs is presented. The EPR spectra show that the symmetry at the Mn site is orthorhombic. This thus indicates association between the Mn and Li impurities. A model is proposed which is consistent with the observed symmetry at the Mn site, the... (Read more)
- 107. Appl. Phys. Lett. 15, 208 (1969) , “Electron Paramagnetic Resonance of Defects in Ion-Implanted Silicon”, K. L. Brower, F. L. Vook, and J. A. BordersThe first EPR measurements of the identity of defects in an ion-implanted layer (< 15 000 Å) are reported. The SiP3 center is the dominant paramagnetic defect produced at room temperature by 400-keV O+ implantation in Al- and B-doped Lopex Si, and it anneals below 200°C. The... (Read more)
- 108. Appl. Phys. Lett. 15, 267 (1969) , “Electron Paramagnetic Resonance in Ion Implanted Silicon”, D. F. Daly, K. A. Pickar.Electron paramagnetic resonance spectra of radiation damage centers in silicon have been observed following implantation with nitrogen and phosphorous ions. Two of these spectra have narrow lines and can be fitted to anisotropic g-tensors and zero field splitting tensors. One is a new... (Read more)
- 109. Surf. Sci. 21, 1-11 (1970) , “ESR investigation of photodamage to zinc oxide powders*1”, K. M. SancierThe esr technique was used to investigate the effects of iron cyanide surface additives on photodamage to ZnO in powder form. The photodamage was monitored by the resonance at a g value of about 1.96, which is comprised of two independent resonances with g values of 1.9564 and 1.9600. The intensity... (Read more)
- 110. Sov. Phys. JETP 31, 677-679 (1970) , “Electron Paramagnetic Resonance in Plastically Deformed Silicon”, V. A. Grazhulis, Yu. A. Osipyan.Lightly doped silicon crystals were investigated experimentally by the electron paramagnetic resonance method. Paramagnetic centers, generated during plastic deformation of these crystals, were detected. The concentration of these centers increased monotonically with increasing degree of deformation. The EPR spectrum of these centers was anisotropic and had a partially resolved fine structure. The centers werestrongly annealed only at temperature T ≧ 600ºC and the activation energy of the annealing process was ~2 eV. It was concluded that these centers were due to electrons of broken bonds in the cores of dislocations with edge components.
- 111. Solid State Commun. 8, 1103-1106 (1970) , “ESR studies of Yb3+ impurities in zinc oxide”, P. Schreiber , A. HausmannIn zinc oxide single crystals after diffusion with Yb2O3 two ESR spectra of Yb3+ ions have been observed which are attributed to substitutional and possibly interstitial ions. The parameters of the spin Hamiltonian have been determined taking into account third order corrections and a relatively... (Read more)
- 112. Solid State Commun. 8, 1359-1361 (1970) , “Electron paramagnetic resonance associated with Zn vacancies in neutron-irradiated ZnO”, A. L. Taylor, G. Filipovich and G. K. LindebergLines in the EPR spectrum of ZnO crystals irradiated by 3.6 × 1018cm−2 fast neutrons are ascribed to holes on oxygen atoms in the basal plane of O4 tetrahedra which surround Zn vacancies. (Read more)
- 113. Solid State Commun. 8, 1559-1563 (1970) , “The yellow luminescence of zinc oxide”, O. F. Schirmer and D. ZwingelFrom a simultaneous observation of the ESR of the paramagnetic Li center and the yellow emission of ZnO, especially its polarization, it is concluded that this luminescence band is due to a recombination of an electron with the neutral Li acceptor. (Read more)
- 114. Solid State Commun. 8, 175 (1970) , “Low temperature electron irradiation of silicon containing carbon ”, A. R. Bean and R. C. NewmanPrevious work has shown that irradiation of silicon at low temperatures leads to the formation of a centre giving rise to local mode absorption bands at 922 and 932 cm-1; this centre has been ascribed to a carbon-oxygen complex with a trapped silicon interstitial in an adjacent site. It... (Read more)
- 115. Solid State Commun. 8, 45-47 (1970) , “A note on the splitting of the ( →← -) line in the ESR spectrum of Fe3+ in ZnO”, I. D. Campbell , J. O. CopeIons of spin which occupy inequivalent cation sites in a wurtzite lattice show ESR line splitting. An analytical expression is derived which describes the dependence of the splitting of the ( →← -) line on crystal orientation. This expression provides a convenient method of deducing... (Read more)
- 116. Phys. Rev. B 1, 1908 (1970) , “Electron Paramagnetic Resonance of the Aluminum interstitial in Silicon”, Keith L. BrowerElectron-paramagnetic-resonance spectra of the Al++ interstitial (Si-G18) produced in aluminum-doped (p-type) silicon by room temperature or 4K electron irradiations are presented and show that the Al++ is located in the tetrahedral interstitial site. The hyperfine... (Read more)
- 117. Phys. Rev. B 1, 1986-1994 (1970) , “Electron Paramagnetic Resonance of V3 + Ions in Zinc Oxide”, G. Filipovich, A. L. Taylor, R. E. CoffmanThe paramagnetic resonance of trace amounts of V3+ in single-crystal hexagonal zinc oxide is reported. The EPR spectrum is fitted with an axially symmetric spin Hamiltonian with five empirically determined parameters: D, gII, g?, A, and B. The spin-Hamiltonian... (Read more)
- 118. Phys. Rev. B 1, 4071 (1970) , “Electron Paramagnetic Resonance Studies of a System with Orbital Degeneracy: The Lithium Donor in Silicon”, G. D. Watkins and Frank S. HamElectron-paramagnetic-resonance (EPR) and electron-nuclear double-resonance (ENDOR) spectra are reported for the first time for the isolated interstitial lithium shallow-donor center in silicon. In zero applied stress the EPR spectrum is complicated because of the fivefold orbital degeneracy... (Read more)
- 119. Phys. Rev. B 2, 4110 (1970) , “Li-Defect Interactions in Electron-Irradiated n-Type Silicon”, B. Goldstein.Single-crystal silicon, both with and without oxygen, has been diffused with lithium to concentrations ? 1017/cm3, irradiated with 1-1.5-MeV electrons, and the ensuing defects studied by EPR and electrical measurements. The presence of oxygen strongly affects the properties of... (Read more)Si| EPR electron-irradiation| Lithium RCA3 RCA4 n-type .inp files: Si/Li3 Si/Li4 | last update: Takahide Umeda
- 120. Phys. Lett. A 31, 147-148 (1970) , “ESR of electron irradiated ZnO confirmation of the F+ center”, J. M. Smith , W. E. VehseIrradiation of single crystals of ZnO with 2 MeV electrons produces a defect which has been identified by its ESR spectrum as an F+ center. A correlation between this center and the radiation induced optical absorption has been observed. (Read more)
- 121. Phys. Lett. A 33, 1-2 (1970) , “ESR spectra of the zinc vacancy in ZnO”, D. Galland and A. HerveElectron irradiated ZnO single crystals show anisotropic ESR spectra corresponding to a spin and a spin 1 hole centers. Tehy are respectively identified as the negative and the neutral charge states of the zinc vacancy. (Read more)
- 122. J. Phys. Chem. Solids 31, 1381 (1970) , “The Annealing of the EPR-Signal Produced in Silicon by Plastic Deformation”, F. D. Wohler and H. AlexanderW. SanderIn silicon an EPR signal is produced by plastic deformation. The annealing behavior of this signal has been investigated, and the dislocation density and structure has been studied by the etch pit technique and by electron microscopy. The EPR-signal anneals in one stage with an activation energy of... (Read more)
- 123. J. Phys. Chem. Solids 31, 739 (1970) , “Electron Irradiation Damage in Silicon Containing Carbon and Oxygen”, A. R. Bean, R. C. Newman and R. S. Smith.Infra-red absorption bands have been measured in the range 1–25 μm for a large number of silicon samples containing oxygen and carbon impurities after various doses of irradiation at room temperature by 2 MeV electrons. Measurements have been made of the removal rates of oxygen and... (Read more)
- 124. J. Catalysis 16, 44-52 (1970) , “Electron spin resonance investigation of electrical conductivity parameters of zinc oxide during surface reactions”, Morio Setaka, Kenneth M. Sancier and Takao KwanThe effect of the electron transfer process between the bulk and surface of ZnO upon oxygen sorption was investigated by measuring the changes of the following ESR parameters: the spin densities of the g = 1.96 and g ~ 2.0 signals, the intensity of a Mn2+ reference sample, and the crystal current of... (Read more)
- 125. J. Appl. Phys. 41, 2977 (1970) , “Analysis of an Electron Spin Resonance Spectrum in Natural Diamonds”, P. E. Klingsporn, M. D. Bell, and W. J. LeivoAn anisotropic electron spin resonance spectrum was observed in three natural Type Ib diamonds. The diamonds which exhibit the spectrum also show the spectrum from substitutional nitrogen donors previously observed by others. The spectrum consists of three anisotropic groups of lines. The spectrum... (Read more)
- 126. Appl. Phys. Lett. 17, 109 (1970) , “JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE”, I. Hayashi, M. B. Panish, P. W. Foy, and S. SumskiDouble-heterostructure GaAsAlx Ga1x As injection lasers which operate continuously at heat-sink temperatures as high as 311°K have been fabricated by liquid-phase epitaxy. Thresh-olds for square diodes as low as 100 A/cm2 and for Fabry-Perot... (Read more)
- 127. Surf. Sci. 27, 375-378 (1971) , “ESR evidence of surface Fermi level anchoring by surface additives on ZnO”, J. P. Bonnelle and M. Guelton
- 128. Sov. Phys. Solid State 12, 2303 (1971) , “EFFECT OF THE SPIN-SPIN RESERVOIR ON SATURATION OF THE NITROGEN EPR LINE IN DIAMOND”, L. A. Shulman, A. B. Brik, T. A. Nachalnaya, G. A. Podzyarei
- 129. Sov. Phys. Solid State 13, 281 (1971) , “ELECTRON PARAMAGNETIC RESONANCE OF NITROGEN-ALUMINUM PAIRS IN DIAMOND”, M. Ya. Shcherbakova, E. V. Soboleva, N. D. Samsonenko, V. A. Nadolinnyi, P. V. Schastnev, A. G. Semenov
- 130. Sov. Phys. JETP 33, 623 (1971) , “Electron paramagnetic resonance of dislocations in silicon”, V. A. Grazhulis, Yu. A. Osip'yan
- 131. Solid State Commun. 9, 1695 (1971) , “Mssbauer effect and lattice parameter for silicon doped with antimony*1 ”, J. R. Teague, C. M. Yagnik, G. J. Long and Robert Gerson and L. D. LafleurSingle crystal silicon, both with and without oxygen, has been diffused with lithium to concentrations~1017/cm3, irradiated with 1 to 1.5 MeV electrons, and the ensuing defects studies by EPR measurements. The presence of oxygen strongly affects the properties of these defects. Measurements have indicated the presence of two new defects which involve Li―one in O-containing material and one in O-free material. The defects are observedin their electron-filleed state, and indicate a net electron spin of 1/2. The defect spectra disappear (with time) at room temperature, and can be explained by the formation of other Li-involved defects which lie deeper in the energy bandgap and are not visible by EPR. Electron irradiation at 40ºK followed by annealing at higher temperature show that both EPR defects described above begin to form at about 200ºK and begin to decrease at about 275ºK―just as does the 250ºK reverse annealing observed generally for n-type Si. Based on these data, and the workof others, it is suggested that both defects form as a result of the motion of Si interstitials which produce a (Li-O-interstitial) conplex in O-containing Si, and a (Li-interstitial) complex in O-free Si. (Read more)
- 132. Solid State Commun. 9, 2251-2253 (1971) , “Far infrared absorption in ZnO*1”, S. Perkowitz, R. K. Murty-Gutta , A. K. GarrisonFar infrared absorption measurements on as-grown and Li-doped ZnO have been made in the range 15-200 cm−1. A large Drude-type free-carrier absorption was observed, as were absorption bands near 115 and 160 cm−1. Combined absorption and EPR data on the Li-doped sample were interpreted... (Read more)
- 133. Solid State Commun. 9, 313 (1971) , “ELECTRON SPIN RESONANCE OF SPIN S = 1 STATES IN UNIRRADIATED DIAMONDS”, Thomas SzendreiThree types of paramagnetic centres with effective spin S = 1 have been detected in natural unirradiated type Ib diamonds. The values of the zero field spitting are 200 oe, 220 oe and 246 oe. (Read more)
- 134. Radiat. Eff. 8, 203 (1971) , “An EPR Study of Fast Neutron Radiation Damage in Silicon”, D. F. Daly, H. E. Noffke.Using electron paramagnetic resonance (EPR) the indensity of the point defects produced by fast neutron irradiation of silicon at room temperature has been determined and the concentration of each defect has been measured. Irradiations were perfrmed at an unmoderated fast burst reactor to assure that damage from gamma irradiation could be neglected and that all the obsserved damage could be attributed to desplacements by fast neutrons. Total fast neutron fluence between 1.2×1015 n/cm2 and 7×1015 n/cm2 was used. The initial rate of removal of the phosphorus donor agrees with the initial carrier removal. However, the production rate for the paramagnetic damage centers is approximately 10 per cent of the carrier removal and less than 1 per cent of the estimated number of displacements per neutron collision. For samples containing approcimately 1016 phosphorus donoers/cm3, the neutral spectrum is observed simultaneously with the negative divacancy spectrum (Si-G7) in both crucible-grown and float-zone crystals. According to the energy level scheme determined for these spectra in electron irradiation silicon, these spectra cannot appear simultaneously if the sample is in equilibrium and uniformly irradiated. From the observation of these spectra, it is concluded that the damage concentrarion and hence the depth of the Fermi level is nonuniform on a microscopic scale. These results are interpreted according to the cluster model for the neutron damage. The cluster consists of a core of damaged silicon with the Fermi level at the center of the band gap and a surrounding space charge region. Outside the space charge region, the Fermi level is the same as in undamaged silicon. It is concluded that the low production rate of the point defects and the non-uniform Fermi level constitute microscopic evidence for the defect cluster model of fast neutron damage in silicon.
- 135. Radiat. Eff. 8, 229 (1971) , “Li-Defect Interactions in Electron-Irradiated n-Type Silicon by EPR Measurements”, B. Goldstein.Single crystal sylicon, both with and without oxygen, has been diffused with lithium to concentrations ~1017/cm3, irradiated woth 1 to 1.5 MeV electrons, and the ensuing defects studies by EPR measurements. The presene of oxygen strongly affects the properties of these defects. Measurements have indicated the presence of two new defects which involve Li---one in O-containing material and one in O-free material. The defects are observed in their electron-filled state, and indicate a net electron spin of 1/2. The defect spectra disappear (with time) at room temperature, and can be explained by the formation of other Li-involved defects which lie deeper in the energy bandgap and are not visible by EPR. Electron irradiatioin at 40ºK followecd by annealing at higher temperatures show that both EPR defects described above begin to form at about 200ºK and begin to decrease at about 275ºK---just as does the 250ºK reverse annealing observed generally for n-type Si. Based on these data, and the work of others, it is suggested that both defects form as a result of the motion of Si interstitial which produce a (Li-O-interstitial) complex in O-containing Si, and (Li-interstitial) complex in O-free Si.
- 136. phys. stat. sol. (a) 5, 737 (1971) , “Observations of arsenic atoms in silicon crystals by use of helium ion scattering”, F. Fujimoto , K. Komaki , K. Hisatake , H. NakayamaA method is presented to obtain density distribution and attenuation factor of foreign atoms inside a silicon crystal using backscattering spectra of a 2 MeV helium beam in the random and aligned directions. Experiments were performed on two silicon crystals, one including about 0.15 at% arsenic... (Read more)
- 137. Phys. Rev. Lett. 27, 1573 (1971) , “Properties of the Interstitial in the Diamond-Type Lattice ”, G. D. Watkins and R. P. Messmer and C. Weigel, D. Peak, and J. W. Corbett*Linear combination of atomic orbital—molecular orbital cluster calculations using extended Hückel theory suggest that the interstitial carbon atom in diamond prefers an "interstitialcy" configuration. The predicted minimum-energy configuration changes with charge state, providing a possible... (Read more)
- 138. Phys. Rev. B 3, 2918 (1971) , “Electron-Paramagnetic-Resonance Study of Clean and Oxygen-Exposed Surfaces of GaAs, AlSb, and Other III-V Compounds”, D. J. Miller and D. HanemanClean surfaces of p-type GaP, GaAs, GaSb, and InAs and n-type GaAs, AlSb, and GaSb have been prepared by crushing in ultrahigh vacuum (10-9 Torr) and measured by the electron-paramagnetic-resonance technique at room temperature and 77°K. A small clean-surface signal was found. When... (Read more)
- 139. Phys. Rev. B 4, 1968 (1971) , “Electron Paramagnetic Resonance of the Neutral (S=1) One-Vacancy-Oxygen Center in Irradiated Silicon”, K. L. Brower.A new EPR spectrum, labeled Si-S1, has been observed in electron- or neutron-irradiated, n- or p-type, crucible-grown silicon under illumination with approximately band-gap light. The Si-S1 spectrum consists primarily of a fine-structure spectrum and a 29Si hyperfine spectrum. By... (Read more)
- 140. Phys. Rev. B 4, 3250-3252 (1971) , “Spin-Hamiltonian Parameters and Spin-Orbit Coupling for V3+ in ZnO”, R. E. Coffman, Makram I. Himaya, Kathryn NyeuThe spin-Hamiltonian parameters for ZnO: V3+ have been refined using electron-paramagnetic-resonance (EPR) line position calculations. The principal sources of error are discussed. The accurate spin-Hamiltonian parameters are used to discuss the spin-orbit coupling within the 3d manifold... (Read more)
- 141. Phys. Lett. A 36, 447-448 (1971) , “2S1/2 -states of Pb3+-ions in CaO and ZnO”, G. Born, A. Hofstaetter , A. ScharmannEPR-spectra of Pb3+-ions in CaO and ZnO are studied at 1.6 K. The g-values and the reduction of the hyperfine interaction constants A are correlated with the partial electron transfer to the ligands. (Read more)
- 142. Jpn. J. Appl. Phys. 10, 52-62 (1971) , “Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I”, Y. NishiThree kinds of paramagnetic centers named PA, PB and PC have been found in a silicon-silicon dioxide structure at liquid nitrogen temperature. PA (g=∼2.000, ΔH=∼4 Oe), and PB having anisotropic g-value... (Read more)
- 143. J. Phys. Chem. Solids 32, 499-509 (1971) , “Trapped-hole centers containing lithium in MgO, CaO and SrO”, O. F. SchirmerWe report an ESR investigation of a center in MgO, CaO and SrO consisting of an O− ion neighbored by a substitutional Li+ ion. The center is identified by comparison with the isomorphous centers in ZnO and BeO and with the analogous V1, VOH and VF centers in the alkaline earth oxides. The... (Read more)
- 144. J. Appl. Phys. 42, 722 (1971) , “New S = 1 EPR Center in Irradiated Diamond”, Y. M. Kim, G. D. WatkinsElectron spin resonance studies have been made of natural diamond crystals electron-irradiated at room temperature. A radiation-induced spectrum is identified as arising from a new anisotropic S=1 center. The S=1 center is characterized by: g1=2.0026,... (Read more)
- 145. J. Appl. Phys. 42, 864 (1971) , “New EPR Spectra in Irradiated Silicon”, D. F. Daly.The purpose of this brief note is to report the spin Hamiltonian parameters for two new EPR spectra that have been observed in annealed irradiated silicon. Comparisons are also made with the parameters of centers already belonging to the extensive catalogue of EPR spectra in silicon. In acordance... (Read more)
- 146. Sov. Phys. Solid State 13, 1809 (1972) , “DEFECTS IN SYNTHETIC DIAMOND POWDERS AND THE DYNAMIC JAHN-TELLER EFFECT”, Yu. A. Bratashevskii, F. N. Bukhanko, N. D. Samsonenko, O. Z. Shapiro
- 147. Sov. Phys. Solid State 14, 1521 (1972) , “EXCHANGE BROADENING OF THE HYPERFINE COMPONENTS OF THE ESR SPECTRUM OF NITROGEN IN DIAMOND”, L. A. Shulman, G. A. Podzyarei
- 148. Sov. Phys. Semicond. 5, 1930 (1972) , “EPR of Zinc Atoms in p-Type Silicon”, V. B. Ginodman, P. S. Gladkov, B. G. Zhurkin, B. V. Kornilov.Zinc is a double accepter in silicon and it introduces two levels, E + 0.31 and E + 0.55 eV, into forbidden band [1,2]. The electrical and optical properties of zinc-doped silicon have been investigated by several workers [2-4]. A brief report of the observation of EPR in silicon is given in [5,6]: in these investigations the magnetic field H was perpendicular to the axis of compression of a crystal. Uniaxial compression gave rise to a structure in EPR spectrum of Zn67 and this structure was attributed to the hyperfine interaction of an unpaired hole with the magnetic moment of the Zn67 nucleus. The present paper describes the result of an investigation of the EPR of the Zn- state of zinc in p-type silicon doped with zinc in p-type silicon doped with zinc and phosphorus. The investigation was carried out at liquid helium temperature.
- 149. Solid State Commun. 11, 1547-1550 (1972) , “Oxygen displacement energy in ZnO”, J. M. MeeseD. R. LockerA displacement threshold at 310 keV has been observed by electrical measurements in single crystal ZnO and has been identified as the minimum electron energy required for oxygen displacements by observing the production of F- centers above this threshold with EPR. (Read more)
- 150. Radiat. Eff. 15, 77 (1972) , “New EPR Spectra in Neutron-Irradiated Silicon”, Y. H. Lee, Y. M. Kim, J. W. Corbett.Six new EPR spectra are reported which are apparently due to intrinsic defects created in the neutron-irradiation and, in some cases, annealing of silicon. In addition a spectrum similar to, but distinct from, that due to the vacancy-phosphorus center is reported. Some tentative defect models are discussed to emphasize the features of the spectra, but more detailed studies are required to establish the identity of the giving rise to these spectra.
- 151. Phys. Rev. B 5, 3988 (1972) , “Electron-Paramagnetic-Resonance Detection of Optically Induced Divacancy Alignment in Silicon”, C. A. J. Ammerlaan, G. D. Watkins.An EPR study was made of the divacancy in silicon, produced by 1.5-MeV electron irradiation at room temperature, under illumination with polarized light. A light-induced alignment of divacancies among the various Jahn-Teller distortion directions in the lattice is observed for the singly positively... (Read more)
- 152. Phys. Rev. B 5, 4274 (1972) , “17O Hyperfine Structure of the Neutral (S=1) Vacancy-Oxygen Center in Ion-Implanted Silicon”, K. L. Brower.The intensity of the 17O hyperfine spectrum associated with the 28Si-17O-28Si isotopic configuration of the vacancy-oxygen (Si-S1) center was enhanced by ion implantation of 17O into silicon. The Si-S1 17O hyperfine spectrum was... (Read more)Si| EPR ion-implantation| 17O Oxygen SL1 pair(=2) vacancy .inp files: Si/V-O* | last update: Takahide Umeda
- 153. Phys. Rev. B 6, 436 (1972) , “Spin-Dependent Recombination on Silicon Surface”, Daniel J. LepineIt is shown that, in pure silicon, the recombination time of photocreated excess carriers depends on the relative spin orientation of the carriers and of the recombination centers. This is evidenced by the observed decrease of the photoconductivity when the magnetization of the recombination centers... (Read more)
- 154. J. Vac. Sci. Technol. 9, 87-90 (1972) , “Properties of ZnO Films Prepared by dc and rf Diode Sputtering”, J. VuillodA brief description of the dc and rf diode sputtering unit is first presented. The study of properties of the films is reviewed taking into consideration two main parameters, oxygen partial pressure and substrate temperature. Reflection electron diffraction and x-ray diffraction studies show that... (Read more)
- 155. J. Lumin. 5, 385-405 (1972) , “Trapping and recombination processes in the thermoluminescence of Li-doped ZnO single crystals*1”, D. ZwingelThe thermoluminescence of Li-doped ZnO single crystals is investigated in the temperature range 4.2–300 K. A glow curve is observed with three maxima, two of them emitting the strong polarized yellow luminescence of ZnO. By varying the Li concentration in the range 0.1–200 ppm a change... (Read more)
- 156. J. Appl. Phys. 43, 3499-3506 (1972) , “Electron Paramagnetic Resonance of the lattice Damage in Oxygen-Implanted Silicon”, K.L. Brower and Wendland BeezholdThe nature of the lattice damage produced at room temperature in ion-implanted intrinsic and n-type silicon has been studied as a function of 160-keV O+ ion fluence using electron paramagnetic resonance (EPR). The known EPR spectra observed were the negative divacancy (Si-G7), the... (Read more)Si| EPR ion-implantation neutron-irradiation| 31P D G7 Oxygen P3 Phosphorus S1 S2 SL2 Silicon amorphous vacancy .inp files: Si/SL2 | last update: Takahide Umeda
- 157. Sov. Phys. Semicond. 6, 1453 (1973) , “Paramagnetic Centers in Silicon Irradiated with Heavy Charged Particles”, V. A. Botvin, Yu. V. Gorelkinskii, V. O. Sigle, M. A. Chubisov.The ESR method was used to study paramagnetic centers generated in silicon single crystals by irradiation with 37-MeV α particles or 9-MeV protons at 273ºK. The experiments were carried out on silicon grown by the floating-zone and Czochralski methods and doped with P31, B11, and A27. The existence of Si-P3, Si-P1, Si-P4, Si-P5, Si-S1 (Si-B2), and Si-S2 centers was established in the proton-irradiated samples. The Si-S1 and Si-S2 centers were not found in the α-irradiated silicon. The characteristics of isochronous annealing of the various centers were determined. The distribution of the paramagnetic centers along the trajectories of the incident particles was determined by successive removal of silicon layers from the irradiated side. The rates of introduction of the paramagnetic centers by α particles and protons were estimated.
- 158. Radiation damage and defects in semiconductors 284 (1973) , The Institute of Physics,London, , “The influence of oxygen and acceptor impurities on the annealing of radiation defects in p-type silicon ”, V.S Vavilov,B.N Mukashev,A.V SpitsynBoth crucible-grown and float-zoned p-type silicon crystals, doped either with boron, gallium or aluminium, were irraadiated at 78 or 300 K by 1.5 MeV electrons and then were annealed at temperatures up to 700 K. Data on the concentration of radiation defects and their energy levels were derived from Hall coefficient and conductivity measurements. In the lowest oxygen content samples, a prominent carrier concentration recovery stage,located at T>360 K, was observed and was observed and was shown to be associated with annealing of the Ev+0.45 eV level radiation defects. The annealing activation energy increased practically linearly with the atomic size of the impurity. Therefore it is suggested that the defects in question are complexes of vacancies with acceptor impurity atoms.
- 159. Phys. Rev. B 7, 2630 (1973) , “A Comparative Electron-Spin-Resonance Study of the Ground State and a Photoconverted Metastable State of the Mg+ Donor in Silicon”, J. E. Baxter, G. Ascarelli.Magnesium diffused into silicon forms a deep-double-donor state. Depending on the compensation, the distinct valence states Mg0, Mg+, or Mg++ are possible. EPR measurements have been performed at 55 GHz on the paramagnetic valence state Mg+ at... (Read more)
- 160. Phys. Rev. B 7, 4547 (1973) , “Raman Scattering and Photoluminescence in Boron-Doped and Arsenic-Doped Silicon”, J. M. Cherlow, R. L. Aggarwal, and B. LaxThe deformation potentials and g values of the ground state of the boron acceptor in silicon have been determined from a study of the stress and Zeeman splitting of the electronic Raman scattering in this material. The stress splitting of the Raman line results from a twofold splitting of the... (Read more)
- 161. Phys. Rev. B 8, 2810 (1973) , “EPR Studies in Neutron-Irradiated Silicon: A Negative Charge State of a Nonplanar Five-Vacancy Cluster (V5-)”, Y. H. Lee, J. W. Corbett.EPR studies are carried out for the float-zone intrinsic silicon irradiated with reactor neutrons up to the total fluence 1018 n/cm2. Details of the Si29 hyperfine structure and of the g tensor in the P-1 spectrum are observed with respect to temperature from 77 to... (Read more)Si| EPR neutron-irradiation| 29Si P1 Silicon cluster(>3) vacancy .inp files: Si/V5- | last update: Takahide Umeda
- 162. Phys. Rev. B 8, 3836 (1973) , “Quantitative Piezospectroscopy of the Ground and Excited States of Acceptors in Silicon”, H. R. Chandrasekhar, P. Fisher, A. K. Ramdas, and S. RodriguezA piezospectroscopic study of the excitation lines from the ?8 ground state to the first two ?8 excited states of the p3/2 series of boron, aluminum, and indium (lines 1 and 2) and to the first ?6 excited state of boron (2p? line) has been made... (Read more)
- 163. Phys. Lett. A 45, 5 (1973) , “Stress Dependence of g-Tensor for Boron Acceptor in Silicon”, T. Shimizu, N. Tanaka.Nonlinear stress dependences of g|| and g are observed for B acceptor in Si. Two possible explanations are made based on the theory of Bir et al. and that of Morgan. (Read more)
- 164. Jpn. J. Appl. Phys. 12, 1307 (1973) , “ESR Studies on Defects and Amorphous Phase in Silicon Produced by Ion Implantation”, K. Murakami, K. Masuda, K. Gamo, S. Namba.Paramagnetic defects have been studied over a wide dose range. At doses>6×1014 P+/cm2, only one isotropic spectrum of g=2.0062±0.0004 which characterizes a continuous amorphous layer is observed. At doses between 0.1 and... (Read more)
- 165. J. Lumin. 6, 376-384 (1973) , “2S1/2 state ions in inorganic luminescent materials*1”, G. Born, A. Hofstaetter , A. ScharmannSelected examples of impurity ions with one unpaired electron in an unfilled shell are Pb3+ ions in II–IV compounds (ZnO, ZnSe, ZnTe), Pb3+ in CaWO4,F centres in alkali halides and Ag0 and Au0 atoms in radiophotoluminescent (RPL) glasses. Comparative studies of EPR, luminescence,... (Read more)
- 166. J. Appl. Phys. 44, 4243 (1973) , “Electron Spin Resonance in Argon-Ion-Implanted Silicon”, K. -C. Chu, W. R. Hurren, E. Hale, J. Reigle.A new paramagnetic center with g = 2.0029 is observed, in both n- and p-type silicon after they are heavily implanted (higher than 1017 ions/cm2) with 150-keV argon ions. ©1973 American Institute of Physics ... (Read more)
- 167. Infra-red studies of crystal defects 1-169 (1973) , Taylor and Francis,London , R. C. NewmanFOREWORD PREFACE 1. INTRODUCTION 2. INFRA-RED ABSORTION FROM A LATTICE CONTAINING POINT DEFECTS. 2.1. Normal Models of Vibration. 2.1.1. The one-dimensional linear chain. 2.1.2. The three-dimensional problem. 2.2. Infra-red Absorption due to Defects in Homopolar Crystals. 2.3. Absorption Measurements. 3. VIBRATIONS OF AN ANHARMONIC LOCAL OSCILLATOR. 3.1. The Sperical Oscillator (R3±Symmetry). 3.2. The Cubic Oscillator. 3.2.1. Oh Symmetry. 3.2.2. Td Symmetry. 3.3. The Trigonal Oscillator. 3.3.1. C3v Symmetry. 3.3.2. D3d Symmetry. 3.4. The Tetragonal Oscillator. 3.4.1. C4v Symmetry. 3.4.2. D4h Symmetry. 3.5. Resume and Result for other Point Symmetries. 4. LOCALIZED VIBRATIONS OF HYDROGEN AND DEUTERIUM IN THE ALKALINE EARTH FLUORIDES. 4.1. Isolated H- and D- Ions on F- Sites (Td Symmetry). 4.1.1. Reductions in symmetry due to the application of a uniaxial stress or an eletric field. 4.2. Other Local Mode Absorption due to H- Ions in Normally Undoped Crystals. 4.3. H- Ions in Crystals containing Rare-earth Ions. 4.3.1. Compensation of R.E.3+ by interstitial H- ions. 4.3.2. Divalent rare-earth hydrogen pairs. 4.3.3. R.E.3+-H- complexes in crystals containing oxygen. 4.4. Other Effects of Irradiation and Absorption due to Neutral Hydrogen. 4.5. The Electron-Phonon Interaction for a Rare-earth Hydrogen pair. 5. HYDROGEN IONS IN ALKALI HALIDE CRYSTALS. 5.1. Pure Crystals. 5.2. U centres in Mixed Halides. 5.2.1. Experimental observations. 5.2.2. Theoretical models. 5.3. Interstitial H- ions. 6. ONE-PHONON INFRA-RED ABSORPTION IN SILICON. 6.1. Neutral Impurities. 6.1.1. Isolated interstitial oxygen. 6.1.2. Absorption due to isolated substitutional impurities. 6.2.2. Boron paired with substitutional impurities. 6.2.3. Boron paired with lithium. 7. IRRADIATION DAMAGE IN SILICON. 7.1. The Oxygen-vacancy Centre. 7.2. Carbon-doped Silicon. 7.3. Germanium-doped Silicon. 7.4. Boron-doped Silicon. 7.5. Neutron Irradiations. 7.6. Ion-implantation studies. 7.7. Concluding Remarks. 8. ONE-PHONON ABSORPTION IN GERMANIUM. 8.1. Neutral Impurities. 8.1.1. Substitutional elements. 8.1.2. Oxygen impurities. 8.2. Electrically Active Impurities. 8.3. Irradiation Damage Bands. 9. COMPOUND III-V SEMICONDUCTORS. 9.1. GAllium Phosphide. 9.2. Gallium Arsenide. 9.2.1. Silicon and boron-doped crystals. 9.2.2. Lithium and copper-diffused crystals. 9.2.3. Crystals containing other impurities. 9.2.4. Ion implantation and other impurities. 9.3. Local Mode Absorption in other III-V Compounds. 9.4. Compensation of Experimental Results with Theory. REFERENCES
- 168. Chem. Phys. Lett. 21, 421-425 (1973) , “ESR studies of aqueous suspensions of zinc oxide”, Joseph Cunningham and Sean CorkeryResults are presented from a technique which allows reproducible ESR spectra to be obtained from circulating aqueous suspensions of various zinc oxides. Singlet ESR signals with g ≈ 1.96 were observed in the dark from In-ZnO and from several zinc oxides under UV illumination. Fast and slow... (Read more)
- 169. Appl. Phys. Lett. 23, 469 (1973) , “Defect structure introduced during operation of heterojunction GaAs lasers”, P. Petroff and R. L. HartmanThe nature and origin of the defects responsible for the rapid degradation of stripe geometry GaAsGaAlAs double-heterostructure lasers have been identified by transmission electron microscopy. These defects are formed by a three-dimensional dislocation network which originates at a dislocation... (Read more)
- 170. Advances in Molecular Relaxation Processes 5, 211-218 (1973) , “Chemisorption of oxygen on transition metal oxides studied by EPR”, Krystyna DyrekThe method was applied to the investigation of adsorption of oxygen on the transition metal oxides MnO, FeO, CoO, Cu2O, and their solid solutions in the diamagnetic matrices ZnO and MgO. It has been found that in the case of pure oxides and their solid solutions at high magnetic metal ion... (Read more)
- 171. Sov. Phys. JETP 39, 721 (1974) , “Investigation of the Properties of the Dislocation EPR Spectra in Silicon”, S. V. Broude, V. A. Grazhulis, V. V. Kveder, Yu. A. Osipyan.We investigated the properties of the dislocation sEPR spectra in Si in the temperature interval from 1.3 to 150ºK. At helium temperatures we observed anomalies in the behavior of the dispersion signals χ' under conditions of adiabatic rapid passage (APR) through resonance. It is shown that the spectrum of the D centers has a hyperfine (hf) structure, with a line width ∆Hi ~0.2-0.3 Oe (the distance between neighboring hf lines is of the order of their width). It is established that under ARP conditions excitations are transferred between the hf lines as a result of spin-spin interactions with a characteristic time τ3, equal to 3-10 sec in the range 1.3-4.2ºK and weakly dependent on the temperature and on the microwave power. We measured the dependence of the integrated intensity of the absorption signals χ'' on the temperature in the 20-150ºK range. A strong deviation from the Curie low was observed at T=40-50ºK. The temperature dependence of the quantity τ1τ2 was measured in the same temperature range, under the assumption that the hf lines have a Lorentz shape. An anomaly at T=40-50ºK was observed also on the plot of τ1τ2=f(1/T). It is concluded that a magnetic phase transition takes place in the D-center system at 40-50ºK, and consequently the dislocations in Si can be regarded as models of one-demensional chain of spins with exchange interactions.
- 172. Solid State Commun. 14, 45-49 (1974) , “Paramagnetic and optical properties of Na-doped ZnO single crystals”, D. Zwingel and F. GärtnerESR-spectra of Na-doped ZnO single crystals are reported, caused by a hole trapped at the Na+ center. The isotropic part of the HFS is positive. An emission, due to recombination at the center, is reported, polarized c and peaked at 570 nm. The influence of covalent bonding is discussed. (Read more)
- 173. Solid State Commun. 14, 735 (1974) , “On the Magnetic Properties of Dislocations in Silicon”, U. Schmidt, E. Weber, H. Alexander, W. Sander.The anisotropy of a group of equidistant lines in the EPR spectrum of plastically deformed Si can be described as line splitting in a nearly axial crystal field, the axis being parallel to the Burgers vector of the dislocations. We suppose that the spins of the unpaired electrons in the core of the... (Read more)
- 174. Solid State Commun. 14, 953-956 (1974) , “Temperature dependence of the ESR spectrum of the zinc vacancy in ZnO”, D. Galland and A. HerveThe temperature dependence of the spectrum of two trapped hole centers introduced by electron irradiation in ZnO is described. The results firmly establish the identification of these centers as being two slightly inequivalent configurations of the zinc vacancy in its negative charge state. (Read more)
- 175. Solid State Commun. 15, 1475-1479 (1974) , “Optical and paramagnetic properties of ZnO-Crystals simultaneously doped with copper and hydrogen”, E. Mollwo, G. Müller and D. ZwingelIn ZnO crystals, containing both Cu and H(D), we observe characteristic absorption peaks in the near i.r. and three new EPR signals. We explain these results by the formation of impurity complexes consisting of an OH center and one or two Cu ions. (Read more)
- 176. Solid State Commun. 15, 1781 (1974) , “EPR evidence of the self-interstitials in neutron-irradiated silicon*1”, Y. H. Lee, J. W. Corbett.Detailed studies on Si---P6 spectrum show that the spectrum has an unusual g-tensor symmetry (monoclinic II) and a large stress alignment (n/n|| = 17). A number of defect models for this spectrum were considered; two (<100> split-interstitial and <100> di-interstitial) are briefly discussed here.... (Read more)
- 177. Radiat. Eff. 22, 169 (1974) , “New EPR Spectra in Neutron-Irradiated Silicon (II)”, Y. H. Lee, P. R. Brosious, J. W. Corbett.Four new EPR spectra, arising from intrinsic defects in silicon created by neutron-irradiation, are resolved. Each spectrum is briefly discussed. Further detailed studies are required to establish defect models.
- 178. phys. stat. sol. (a) 21, 677 (1974) , “EPR Measurements in Ion-Implanted Diamond”, P. R. Brosious, J. W. Corbett, J. C. BourgoinA new EPR spectrum, arising from defects in diamond created by boron, carbon, and nitrogen ion-implantation, is observed. The spectrum, lattice damage production, and annealing of damage are discussed and are ascribed to amorphous carbon. (Read more)
- 179. phys. stat. sol. (a) 22, K55 (1974) , “EPR of Conduction Electrons Produced in Silicon by Hydrogen Ion Implantation”, Yu. V. Gorelkinskii, V. O. Sigle, Zh. S. Takibaev.It has been observed using electrical measurements that proton bombardment at room temperature followed by annealing at about 300ºC produced shallow donors in silicon with a donor ionization energy of 26 meV (1,2). This note reports first EPR measurements on conduction electrons produced in Si by... (Read more)
- 180. phys. stat. sol. (a) 25, 541 (1974) , “Electron Paramagnetic Resonance in Diamond Implanted at Various Energies and Temperatures”, P. R. Brosious, Y. H. Lee, J. W. Corbett, L. J. ChengAmorphous carbon layer EPR measurements have been fitted to a model which predicts the critical fluences at which the layer forms for any temperature and ion species; it predicts the layer will not form during nitrogen ion implantation in diamond above 1031°K. A new anisotropic EPR spectrum labeled D-A4 is observed after hot-implantation (650°C) with nitrogen ions. It is thought to be a spin-one-center arising from a small D-tensor interaction with <111> symmetry. Hot implantation suppresses the formation of the amorphous layer and enhances creation of crystalline lattice defects. (Read more)
- 181. Phys. Rev. Lett. 33, 1164 (1974) , “Nonlinear, Self-Consistent Theory of Proton Screening in Metals Applied to Hydrogen in Al and Mg ”, Z. D. Popovic* and M. J. StottThe density-functional formalism has been used to treat self-consistently the nonlinear screening of a proton in an electron gas. The results have been used to calculate activation energies for diffusion of hydrogen in Al and Mg. The theory is in good agreement with experimental results which are... (Read more)
- 182. Phys. Rev. B 9, 2607 (1974) , “EPR of a Jahn-Teller distorted (111) carbon interstitialcy in irradiated silicon”, K. L. Brower.An electron-paramagnetic-resonance (EPR) study of irradiated, p-type silicon doped with carbon enriched with 13C has revealed that the Si-G11 spectrum possesses a 13C hyperfine structure. Owing to the complexity and lack of resolution in the observed spectrum, we found it... (Read more)
- 183. Phys. Rev. B 9, 4351-4361 (1974) , “EPR study of defects in neutron-irradiated silicon: Quenched-in alignment under <110>-uniaxial stress”, Young-Hoon Lee and James W. CorbettThe stress effect in an EPR study is first treated rigorously in terms of the piezospectroscopic tensor, taking account of the local symmetry of a defect. It is found that the degree of alignment (n?/n?) provides incisive information on the structure of a defect; in general, a... (Read more)
- 184. Phys. Lett. A 49, 425 (1974) , “An orientation-dependent defect in ion-implanted silicon*1”, Y. H. Lee, P. R. Brosious, J. W. Corbett.A new EPR spectrum is resolved in the N+-implanted silicon, and this center can be produced only by the (110) channeling ions in the region underneath the amorphous layer. (Read more)
- 185. Phys. Lett. A 50, 49-50 (1974) , “Hyperfine interaction of adsorbed O2− with GaAs surface atoms”, G. H. Stauss , J. J. KrebsEPR measurement of the hyperfine interaction between Ga nuclei and O2− ions adsorbed on clean GaAs is reported. The surface Ga atomic orbital concerned has an almost purely p character. (Read more)
- 186. Phys .Rev. Lett. 32, 271 (1974) , “Observation of Electron Spin Resonance of Negative Ions in Liquid Helium”, Jonathan F. Reichert and Arnold J. DahmWe have observed ESR signals of negative ions in liquid helium. The linewidth and g value have been measured. Electrons injected into helium by field emission from ferromagnetic tips are shown to be polarized. We propose a new technique for the measurement of electron spin polarization. (Read more)
- 187. J. Chem. Phys. 60, 2148-2151 (1974) , “Formation of O– in ZnO from the dissociation of adsorbed N2O”, Ning-Bew Wong, Younes Ben Taarit, and Jack H. LunsfordPhotoinduced O ions or V-type centers have been detected in ZnO following ultraviolet irradiation at 196°C. The EPR spectrum of the ions is characterized by g=2.021 and g = 2.0026. The concentration of O was greatly... (Read more)
- 188. J. Catalysis 35, 167-175 (1974) , “Studies of electron spin resonance spectra and activity of supported zinc oxide catalysts for hydrogenation of ethylene”, D. L. Harrison, A. J. Parker, Marjorie J. Sharp and H. SteinerThe activities and ESR spectra of zinc oxide catalysts for hydrogenation of ethylene at 150 °C have been studied. No catalytic activity was observed for silica- or alumina-supported ZnO at surface coverages below 2–3 nominal monolayers. The ESR signal at g = 1.958 from the zinc oxide was... (Read more)
- 189. J. Appl. Phys. 45, 3014 (1974) , “Fast capacitance transient appartus: Application to ZnO and O centers in GaP p-n junctions”, D. V. LangNew techniques and apparatus are presented which overcome some of the limitations of previous capacitance transient techniques and extend the useful range of capacitance transient measurements to intermediate depth impurity and defect states in semiconductors. This development greatly enhances the... (Read more)
- 190. J. Appl. Phys. 45, 3023 (1974) , “Deep-level transient spectroscopy: A new method to characterize traps in semiconductors”, D. V. LangA new technique, deep-level transient spectroscopy (DLTS), is introduced. This is a high-frequency capacitance transient thermal scanning method useful for observing a wide variety of traps in semiconductors. The technique is capable of displaying the spectrum of traps in a crystal as positive and... (Read more)
- 191. J. Appl. Phys. 45, 3899 (1974) , “Rapid degradation phenomenon in heterojunction GaAlAs-GaAs lasers”, P. Petroff and R. L. HartmanThe rapid degradation phenomenon in Ga1xAlxAsGaAs DH lasers has been associated with the growth of a dislocation network during the device operation. The nature of these defects has been analyzed by transmission electron microscopy in an effort to... (Read more)
- 192. Sov. Phys. Solid State 16, 1377 (1975) , “Cross relaxation in ESR spectra of synthetic diamonds”, L. A. Shulman, G. A. Podzyarei
- 193. Sov. Phys. Solid State 16, 2118 (1975) , “Electron paramagnetic resonance spectrum and the infrared absorption of diamonds doped with nitrogen isotopes”, Yu. A. Klyuev, V. I. Nepsha, A. M. Naletov
- 194. Sov. Phys. Solid State 17, 991 (1975) , “Electron spin resonance of Co2+ ions in synthetic diamonds”, V. S. Bagdasaryan, . A. Markosyan, M. A. Matosyan, O. S. Torosyan, E. G. Sharoyan
- 195. Sov. Phys. Semicond. 8, 1049 (1975) , “Interaction of Hydrogen Atoms and Radiation Defects in the Case of H+ Ion Implantation in Silicon”, V. A. Botvin, Yu. V. Gorelkinskii, V. A. Kudryashev, V. O. Sigle.In an earlier paper1 we demonstrated that paramagnetic defects (Si-B2) were formed as a result of implantation of hydrogen ions in silicon single crystals. We also showed that implanted hydrogen atoms participated in the formation of these defects. Additional experiments were carried out in order to determine the interaction between the implanted hydrogen atoms and defects and to find the influence of these atoms on the recovery of the carrier density.
- 196. Sov. Phys. Semicond. 9, 104 (1975) , “Comparison of the results of an investigation of ESR signals and high-temperature measurements of the Hall effect and electrical conductivity of iron-doped GaAs samplesr”, N. I. Suchkova , N. N. Solov'ev
- 197. Sov. Phys. Semicond. 9, 1303 (1975) , “Characteristics of Radiation Damage in Silicon Bombarded with U235 Fission Fragments”, Zh. S. Takibaev, Yu. V. Gorelkinskii, V. F. Grishchenko, N. N. Gerasimenko.the ESR method was used in a study of the properties of radiation defects in silicon bombarded with U235 fission fragments. The source of these fragments was uranium dioxide irradiated, together with silicon, by reactor neutrons. It was established that the main defects generated by fission fragments were tetravacancies (called Si-P3 centers) and centers associated with amorphization (VV centers). An analysis of the distribution function of the concentration of paramagnetic centers demonstrated that individual fission fragments were capable of creating point defects in densities sufficient for the formation of an isolated amorphous region in Si. A continuous amorphous layer near the surface of an Si crystal was observed when the fission fragment density was ~1015cm-2. An estimate was obtained of the rate of introduction of paramagnetic centers whose average value was ~104cm-1 per fragment. The ESR signal disappeared completely after annealing at ~600℃.
- 198. Sov. Phys. JETP 42, 1073 (1975) , “ESR and Spin Relaxation of Deep Centers in Semiconductors in the Presence of Photoelectrons (Si:Fe0)”, M. F. De?gen, V. Ya. Bratus, B. E. Vugme?ster, I. M. Zaritski?, A. A. Zolotukhin, A. A. Konchits, L. S. Milevski?.An investigation was made of the influence of photoelectrons on the ESR and spin relaxation of deep centers in semiconductors in the specific case of Si:Fe0. It was established that the appearance of conduction electrons generatd by optical illumination reduced the ESR signal intensity and gave rise to photoelectron-stimulated spectral diffusion in an inhomogeneously broadened ESR line of Fe0.Heating photoelectronsby an electric field resulted in a further reduction in the ESR signal of Fe0 because of an increase in the effective temperature of the photoelectrons. The observed behavior was explained by exchange scattering of photoelectrons on Fe0 center. Allowance for photoelectron recombination process made it possible to explain the reduction in the ESR signal whhich occurred as a result of optical illumination. A new mechanism of spectral diffusion in inhomogeneously broadened ESR lines was suggested: this diffusion was due to double exchange scattering of carriers by paramagnetic centers. A comparison of the theory with experiment yielded the cross section for the exchange scattering of electrons by Fe0 impurities and the dependence of the spin-lattice relaxation time of hot photoelectrons on their effective temperature.
- 199. Solid State Commun. 16, 171 (1975) , “On the Role of Defect Charge State in the Stability of Point Defects in Silicon”, L. C. Kimerling, H. M. DeAngelis, J. W. Diebold.Defect annealing in 1-MeV electron-irradiated, phosphorus-doped silicon is studied. Charge state effects are explored directly using a p-n junction structure. A defect state which is associated with the E center (phosphorus-vacancy pair) is found to disappear at approximately 150°C with an... (Read more)
- 200. Phys. Rev. B 11, 822 (1975) , “Ground-State Wave Function for Shallow-Donor Electrons in Silicon. I. Isotropic Electron-Nuclear-Double-Resonance Hyperfine Interactions”, J. L. Ivey, R. L. Mieher.In a new theoretical investigation of electrons bound to the shallow-donor impurities (P, As, Sb) in silicon we have calculated the Fermi-contact hyperfine-interaction constants for the Si29 lattice nuclei surrounding the impurity nucleus. We have used a model potential which represents... (Read more)
- 201. Phys. Rev. B 12, 4383 (1975) , “Defects in Irradiated Silicon: EPR of the Tin-Vacancy Pair”, G. D. Watkins.An EPR spectrum, labeled Si-G29, is identified as a lattice vacancy trapped by substitutional tin. The resulting tin-vacancy pair is observed in its neutral ground state with S=1. Studies versus wavelength of illumination indicate that it has a donor level at ?Ev+0.35 eV. Analysis of the... (Read more)
- 202. Phys. Rev. B 12, 5824 (1975) , “Defects in Irradiated Silicon: EPR and Electron-Nuclear Double Resonance of Interstitial Boron”, G. D. Watkins.An EPR spectrum, labeled Si-G28, is identified as arising from neutral interstitial boron in silicon. It is produced by 1.5-MeV electron irradiation at 20.4K, presumably when a substitutional boron atom traps a mobile interstitial silicon atom which is produced in the original damage event. Three... (Read more)
- 203. Lattice Defects in Semiconductors 23, 1-22 (1975) , Institute of Physics, London , “EPR Studies of the Lattice Vacancy and Low-Temperature Damage Processes in Silocon”, G. D. Watkins.EPR studies of silicon irradiated at 20.4 K and 4.2 K by 1.5 MeV and 46 MeV electrons are described. In 46 MeV irradiations the dominant defects formed appear to be divavancies and other multiple defect aggregates which liberate vacancies throughout the anneal to room temperature as they reorder, recombine, etc. For 1.5 MeV irradiations group III atoms play a vital role in p- and n-type materials in trapping interstitials and stabilizing damage. Carbon and oxygen are not effective interstitial traps at these temperatures. Evidence of limited vacancy migration during irradiation is also cited. Two distinct excited configurations of vacancy-oxygen pairs are identified as precursors to A-centre formation in n-type silicon. The kinetics for their conversion to A-centres depends strongly upon the Fermi level as does the isolated vacancy migration energy whhich is measured to be 0.18 ± 0.02 eV for the V= charge state. The vacancy has four charge states, V+, V0, V- and V=. Kinetics for hole release from V+ reveals an activation barrier of 0.057 eV. The concentration of V+ at 20.4 K in boron-doped material indicates the corresponding donor level even closer to the band edge, approximately EV + 0.039 eV. Jahn-Teller energies for V0, V+, and V- are estimated from stress-alignment studies and confirmed to be large. Kinetics studies for reorientation from one Jahn-Teller distortion to another are also described for each charge state.
- 204. Lattice Defects in Semiconductors 23, 126-148 (1975) , Institute of Physics, London , “Lattice Defects in Ion-Implanted Semiconductors”, L. C. Kimerling, J. M. Poate.This paper summerizes the current status of ion implantation damage research in semiconductors. We have attempted to review the recent interesting measurements and theories. the damage process is traced from the production mechanism to the structural and electrical properties of the defects and their annealing characteristics. Defect-impurity interactions and lattice site location of the implanted ion are discussed. New areas of research such as enhanced diffusion, gettering and mixing phenomena are discussed.
- 205. Lattice Defects in Semiconductors 23, 433-438 (1975) , Institute of Physics, London , “The EPR Spectra in Silicon with Dislocations”, H. Alexander, M. Kenn, B. Nordhofen, E. Weber.Plastic deformation introducing about 109cm-2 dislocations in silicon gives rise to a complex EPR signal. It consists of a group of central lines around g = 2 and a zero field splitting multiplet of 14 pairs of lines. At low temperature (≤30 K) the g tensor of the four most prominent central lines was determined. The lines belong to the same (broken bond type) centre Si-K1 in diffeerent orientations. The axes of this centre are oriented in an unusual manner. beginning at 60 K additional central lines appear, one of which can be ascribed to the existence of dangling bonds normal to the glide plane of the dislocations. The fine structure multiplet is due to a centre (Si-K2) with its g axes parallel to [011],[011],[100];[011] is the direction of the Burgers vector of most of the dislocations and the axis of a nearly axially symmetric D tensor. The splitting parameter changes strongly with temperature between 60 K and 225 K, where the multiplet disappears. Possible causes for the splitting are discussed.
- 206. Jpn. J. Appl. Phys. 14, 544 (1975) , “Study of Defects Introduced by Ion Implantation in Diamond”, J. -F. Morhange, R. Beserman, J. C. BourgoinNatural type IIa diamonds have been implanted with 70 keV carbon, nitrogen and boron ions. The behaviour of the defects introduced is monitored using electron paramagnetic resonance, absorption, luminescence and Raman scattering measurements. We first describe and discuss the applicability of these... (Read more)
- 207. Z. Physik B 23, 171-181 (1976) , “Intrinsic Defects in Electron Irradiated Zinc Oxide”, B. Schallenberge, A. Hausmann
- 208. Sov. Phys. Solid State 18, 1883 (1976) , “Spin-lattice relaxation of a Jahn-Teller nitrogen center in diamond”, I. M. Zaritskii, V. Ya. Bratus, V. S. Vikhnin, A. S. Vishnevskii, A. A. Konchits, V. M. Ustintsev
- 209. Sov. Phys. Solid State 18, 190 (1976) , “EPR of Phosphorus in Silicon”, P. Swarup, P. L. Trivedi.Experimental values of the exchange integral are presented for phosphorus-doped silicon, at various phosphorus concentration, and are compared with the theory. It is shown that the observed temperature dependence of the EPR linewidth in these samples can be attributed to a phonon-induced admixture of excited states to the ground state of the impurity center. The proposed mechanism is compared with the mechanism of dynamic narrowing due to hopping. We have analyzed the EPR spectra of silicon single crystals doped with phosphorus in the concentration range from 2・1017 to 2・1018 cm-3, at temperatures from 2º to 20ºK.1 It was observed that the EPR line of phosphorus has a Lorentz shape at all concentrations and temperatures. Estimates of the exchange integrals at various impurity concentrations were obtained from the experimental data on the EPR linewidth. It is shown that the temperature dependence of the linewidth confirms the conclusion that an admixture of excited orbital states of the impurity centers to the ground state is induced by the phonons and that the exchange integral depends on temperature. The proposed mechanism is compared with the mechanism of dynamic narow connected with hopping.2
- 210. Sov. Phys. Semicond. 10, 1339 (1976) , “Radiation Damage in Silicon Resulting from Complete Stopping of 30 MeV Protons”, Yu. V. Gorelkinski?, V. O. Sigle, V. A. Botvin.The ESR method was usedin a study of radiation defects created in single-crystal silicon by 30 MeV protons. The distribution of the paramagnetic centers was determined as a function of the proton energy between 30 and ~10 MeV. It was established that in this range of energies the rates of introduction of centers with high (~10 keV) and low (~100 eV) threshold energies of formation were independent of the proton energy. The structure of the radiation damage was determined by investigating the ESR spectra of samples with high phosphorus concentrations (~1017-1018 cm-3) after irradiation with various proton doses. For comparison, measurements were made also on silicon samples irradiated with fast reactor neutrons. The probabilities of formation of disordered regions by recoil nuclei of energies exceeding ~10 keV were approximately equal in the proton (30 MeV) and neutron irradiation cases. However, when silicon was bombarded with protons, about 80% of the divacancies (Si-G7 centers) formfed were located outside the disordered regions.
- 211. Sov. Phys. Semicond. 10, 637 (1976) , “Influence of oxygen on properties of gallium arsenide doped with transition metals”, D. G. Andrianov, . M. Omel'yanovski?, E. P. Rashevskaya, N. I. Suchkova
- 212. Sov. Phys. Semicond. 10, 899 (1976) , “Influence of the potential relief in gallium arsenide on optical charging of paramagnetic centers”, D. P. Erchak, V. F. Stel'makh, V. D. Tkachev, G. G. Fedoruk
- 213. Solid-State Electronics 19, 611 (1976) , “Thermal Emission Rates and Activation Energies of Electrons at Tantalum Centers in Silicon”, Kenji Miyata and C. T. SahThe thermal emission rates and activation energies of electrons trapped at the two Ta donor centers in n-type silicon are determined from transient capacitance measurements on Schottky barrier diodes made on phosphorus and tantalum doubly doped silicon crystals. The thermal activation energies are... (Read more)
- 214. Solid State Commun. 20, 143-146 (1976) , “Deep traps in semi-insulating GaAs: Cr revealed by photo-sensitive ESR”, U. Kaufmann and J. SchneiderThe Cr+ ESR spectrum has been observed in GaAs: Cr after near i.r. excitation. The ESR photo-excitation and quenching spectra are used to establish a model for the Cr centers which is consistent with photoconductivity, photo-thermopower, and photocapacitance studies as well as with optical... (Read more)
- 215. Solid State Commun. 20, 881 (1976) , “ESR in Iron Doped Silicon Crystals under Stress”, M. Berke, E. Weber and H. AlexanderH. Luft and B. ElschnerThe spin lattice coefficients C11 and C44 characterizing the crystal field under stress are measured for neutral iron at interstitial sites in silicon. The coefficients are one order of magnitude larger than for Fe3+ in MgO. Both C11 and C44 turn out to be negative. (Read more)
- 216. Radiat. Eff. 29, 7 (1976) , “Photo-EPR Experiments on Defects in Irradiated Silicon”, Y. H. Lee, T. D. Bilash, J. W. Corbett.The defect electrical levels for eight EPR spectra (Si-A10, -A14, -A15, -A16, -G7, -G16, -P2, -P4) are determined from optical bleaching experiments via electron paramagnetic resonance. The defect energy levels are all located near the middle of the band gap in between Ec -0.40 eV and Ev +0.40 eV.
- 217. Phys. Rev. Lett. 36, 1329 (1976) , “EPR Observation of the Isolated Interstitial Carbon Atom in Silicon ”, G. D. Watkins and K. L. BrowerAn EPR spectrum, labeled Si-G12, is identified as arising from an isolated interstitial carbon atom in silicon. A ?100? C-Si interstitialcy model is suggested for the defect in which a silicon and carbon atom pair partially share single substitutional site. Because carbon is isoelectronic with... (Read more)
- 218. Phys. Rev. B 13, 2511 (1976) , “EPR of a Trapped Vacancy in Boron-Doped Silicon”, G. D. Watkins.An S=1/2 EPR spectrum, labeled Si-G10, is tentatively identified as a lattice vacancy trapped by substitutional boron in silicon. It is produced in boron-doped vacuum floating-zone silicon by 1.5-MeV-electron irradiation at 20.4 K followed by an anneal at ? 180 K, where the isolated vacancy... (Read more)
- 219. Phys. Rev. B 13, 2653 (1976) , “EPR Studies of Defects in Electron-Irradiated Silicon: A Triplet State of Vacancy-Oxygen Complexes”, Young-Hoon Lee and James W. CorbettThree new EPR spectra (Si-A 14, -A 15,and-A 16) and two previously known spectra (Si-P2and-P4) are observed for the first time in electron-irradiated silicon. The microscopic defect models are established as multivacancy-oxygen complexes with the oxygen(s) in Si-O-Si structure inside the ... (Read more)
- 220. Phys. Rev. B 14, 3494 (1976) , “Divacancy in Silicon: Hyperfine Interactions from Electron-Nuclear Double Resonance Measurements”, J. G. de Wit, E. G. Sieverts, and C. A. J. AmmerlaanThe Si-G6 EPR spectrum, which is associated with the positive charge state of the divacancy in silicon, was investigated by electron-nuclear double resonance. Hyperfine tensors describing the interaction between the unpaired divacancy electron and 29Si nuclei were determined. With these... (Read more)
- 221. Phys. Rev. B 14, 4506 (1976) , “EPR study of neutron-irradiated silicon: A positive charge state of the <100> split di-interstitial”, Young-Hoon Lee, Nikolai N. Gerasimenko, and James W. CorbettThe Si-P6 spectrum shows an intrinsic tetragonal symmetry with the C2 axis along ?100? and distortion forces the principal axes of the g tensor to be displaced in the {100} plane. The g tensor previously identified by Jung and Newell was found to be due to the motionally averaged state... (Read more)
- 222. Phys. Rev. B 14, 872-883 (1976) , “EPR of a <001> Si interstitial complex in irradiated silicon”, K. L. Brower.This paper deals with an electron-paramagnetic-resonance study of the Si-B3 center, which was first reported by Daly. The Si-B3 center is a secondary defect which forms upon annealing between 50 and 175C in irradiated boron-doped silicon and is stable up to ?500C. Our studies indicate that the... (Read more)
- 223. Phys. Lett. A 59, 238 (1976) , “An EPR study of optical absorption of the oxygen-vacancy pair in electron-irradiated silicon*1”, Y. H. Lee, J. C. Corelli, J. W. Corbett.The negative charge state of the vacancy-oxygen pair (Si-B1) in irradiated silicon was populated by illumination with polarized light, from which the direction of the electric dipole moment was determined to be near 110 perpendicular to the (Si-O-Si) bond axis. Energy dependence of the alignment... (Read more)
- 224. J. Phys. Soc. Jpn. 41, 711 (1976) , “Electron Spin Relaxation Time of Phosphorus-Doped Silicon”, H. Nagashima, H. Yamazaki.The decay time of induced magnetization Mz of donor electrons is observed for (Si:P) samples having impurity concentrations 5.6×1017 ≤ Nd 2.7×1018 donors / cm3 in the 1.2-4.2 K temperature range. The results show that the spin-lattice relaxation time T1 increases with increasing donor concentration and becomes so close to the spin-spin relaxation time T2 in the intermediate concentration region of transport phenomena. (Read more)
- 225. J. Magn. Res. 21, 387 (1976) , “The Divacancy in Silicon: Spin-Lattice Relaxation and Passage Effects in Electron Paramagnetic Resonance”, C. A. J. Ammerlaan, A. van der Wiel.The longitudinal spin-lattice relaxation time T1 of the divacancy in silicon, in its positively charged state, was determined in the temperature region between 10 and 30 K. The study was made by measuring the line shape and amplitude of the electron paramagnetic resonance spectrum of V+2 (the Si-G6 spectrum) in a static magnetic field of 8.24 kOe. the passage conditions in observing the resonances were varied through the transition from adiabatic fast (ωmT1 > 1) to adiabatic slow (ωmT1 < 1) with respect to the audiofrequency (ωm) modulation field. Explicit formulas are derived to describe line shape and amplitude of the resonance in the transition region around ωmT1 = 1. The spin-lattice relaxation time found is given by T1(s) = 3.4 × 105 × T(K)-6.6, which demonstrates that the Raman two-phonon process is the active relaxation mechanism..
- 226. J. Lumin. 12-13, 441-445 (1976) , “ESR and luminescence of trapped hole centers in ZnO and SnO2”, E. Mollwo , D. ZwingelIn SnO2 single crystals acceptor centers are found upon incorporation of Al3+ and Ga3+ ions at cation sites. After UV-excitation, holes, trapped at these centers, give rise to polarized luminescence and thermoluminescence. The structure of the centers is analysed by ESR and compared with similar... (Read more)
- 227. Appl. Phys. Lett. 29, 265 (1976) , “EPR Evidence for a Positively Charged Vacancy-Oxygen Defect in Silicon”, Paul R. BrosiousA new EPR spectrum, labeled Si-I3, has been observed in electron-irradiated n-type Czochralski silicon illuminated with approximately band-gap light. The g-tensor symmetry, the g shifts from the free-electron value, and the temperature dependence of the spectrum amplitude lead to the... (Read more)
- 228. Appl. Phys. Lett. 29, 461 (1976) , “Dislocation climb model in compound semiconductors with zinc blende structure”, P. M. Petroff and L. C. KimerlingA new dislocation climb model is proposed for compound semiconductors with the zinc blende structure. Within the model a supersaturation of only one type of point defect is needed for the dislocation climb process. Consideration of the forces involved suggest that in compound semiconductors grown by... (Read more)
- 229. Appl. Phys. Lett. 29, 605 (1976) , “Observation and analysis of very rapid optical degradation of GaAs/GaAlAs DH laser material”, B. Monemar and G. R. WoolhouseWe have observed and analyzed a very rapid form of degradation caused by the optical excitation of GaAs/GaAlAs DH laser material. It consists of the very rapid (50 µ/sec) development of 110-oriented lines originating at a mechanically damaged area and restricted to the optically excited area.... (Read more)
- 230. Sov. Phys. Solid State 19, 100 (1977) , “Impurity states of iron group ions in gallium arsenide and silicon”, E. S. Demidov
- 231. Sov. Phys. Semicond. 11, 426 (1977) , “Magnetic and optical properties of Ni3+ and Co2+ ions of 3d7 configuration in gallium arsenide”, D. G. Andrianov, N. I. Suchkova, A. S. Savel'ev, E. P. Rashevskaya, M. A. Filippov
- 232. Solid State Commun. 22, 767 (1977) , “ESR STUDIES OF DIAMOND POWDERS”, J. H. N. LoubserThe ESR spectrum of two defect centres were observed in finely ground diamond powders (0.5 to 30 μm size). The one centre has been seen before in irradiated and annealed single crystals of natural diamonds (the O1 centre) while the second one has only been seen in synthetic diamonds grown from... (Read more)
- 233. Rev. Sci. Instrum. 48, 135-141 (1977) , “EPR Techniques for Studying Defects in Silicon”, K. L. Brower.Due to long spin-lattice relaxation times and low defect concentrations, the EPR study of defects in irradiated silicon requires special experimental capabilities. The superheterodyne spectrometer described in this paper, which has been used in numerous defect studies, can detect 1010... (Read more)
- 234. Radiation Effects in Semiconductors 31, 174-185 (1977) , Institute of Physics, Bristol , “Heavy-Dose Ion Implantation”, K. Masuda.
- 235. Radiation Effects in Semiconductors 31, 213-220 (1977) , Institute of Physics, Bristol , “Electron Paramagnetic Resonance of New Defects in Heavily Phosphorus-Doped Silicon after Electron Irradiation”, E. G. Sieverts, C. A. J. Ammerlaan.
- 236. Radiation Effects in Semiconductors 31, 266-271 (1977) , Institute of Physics, Bristol , “Electron Paramagnetic Resonance of Point Defects in Deformed Silicon”, E. Weber, H. Alexander.
- 237. phys. stat. sol. (a) 39, 11 (1977) , “Photoelectric Spectroscopy - A New Method of Analysis of Impurities in Semiconductors”, Sh. M. Kogan, T. M. Lifshits1. Introduction 2. The photothermal ionization of impurities in semiconductors 3. The excitation energies of impurities in germanium and silicon 4. The analysis of impurities in crystals 4.1 Germanium 4.2 Silicon 4.3 Gallium arsenide 4.4... (Read more)
- 238. phys. stat. sol. (a) 41, 637 (1977) , “EPR of a Carbon-Oxygen-Divacancy Complex in Irradiated Silicon”, Y. H. Lee, J. W. Corbett, K. L. Brower.Additional EPR experiments on the Si-G15 spectrum, previously observed in p-type, pulled silicon after electron irradiation, are described. The hyperfine interaction with the 29Si nuclei and the quenched-in defect alignment under uniaxial stress are newly observed. A correlation is made... (Read more)
- 239. phys. stat. sol. (a) 41, K21 (1977) , “Anisotropic Broadening of Linewidth in the EPR Spectrum of Fe0 in Silicon”, W. Gehlhoff, K. H. Segsa.Measurements of temperature dependances of the Hall coefficient and resistivity in iron doped sillicon crystals slow that iron acts as a donor impurity, introducing a converts to a donor level 0.4 eV from the valence band. This level is unstable at room temperature and converts to a donor level 0.55... (Read more)
- 240. Phys. Rev. B 15, 17 (1977) , “EPR of Cr(3d3) in GaAsevidence for strong Jahn-Teller effects”, J. J. Krebs and G. H. StaussThe X-band EPR spectrum of Cr3+(3d3) has been observed in semi-insulating Cr-doped GaAs at 5 K. The Cr is assumed to be substitutional for Ga. The S=3 / 2 center has an orthorhombic (C2ν) symmetry spin Hamiltonian... (Read more)
- 241. Phys. Rev. B 15, 3836 (1977) , “Defect Energy Levels in Boron-Doped Silicon Irradiated with 1-MeV Electrons”, P. M. Mooney, L. J. Cheng, M. Sli, J. D. Gerson, and J. W. CorbettUsing transient capacitance spectroscopy, we studied defect energy levels and their annealing behavior in boron-doped silicon of various resistivities irradiated with 1-MeV electrons at room temperature. Three levels located at Ev+0.23, Ev+0.38, and Ec-0.27 eV... (Read more)
- 242. Phys. Rev. B 15, 816 (1977) , “Optical detection of conduction-electron spin resonance in GaAs, Ga1-xInxAs, and Ga1-xAlxAs”, Claude Weisbuch and Claudine HermannThe optical detection of conduction-electron spin resonance (CESR) is performed in GaAs, Ga1-xInxAs, and Ga1-xAlxAs alloys. The measured g factor of GaAs is g*=-0.44±0.02. The good precision obtained permits a fruitful comparison with theory.... (Read more)
- 243. Phys. Rev. B 16, 971 (1977) , “EPR of Cr2+ (3d4) in gallium arsenide: Jahn-Teller distortion and photoinduced charge conversion”, J. J. Krebs and G. H. StaussThe spin-Hamiltonian parameters and low-temperature behavior of Cr2+ in GaAs are found to correspond closely to those in II-VI zinc-blende compounds, suggesting the occurrence of a static Jahn-Teller distortion. Observation of photoinduced charge conversion among Cr2+,... (Read more)
- 244. Phys. Rev. B 16, 974 (1977) , “EPR study of Fe3+ and Cr2+ in InP”, G. H. Stauss, J. J. Krebs, and R. L. HenryAt 4.5 K, Fe3+ (3d5) displays a cubic-symmetry EPR spectrum in InP similar to that in related III-V semiconductors, with parameters g=2.0235(10) and a=+221(2)×10-4 cm-1. Optical transitions near 0.75 and 1.13 eV produce transient decreases in the... (Read more)
- 245. Phys. Lett. A 60, 355-357 (1977) , “Hyperfine structure in the EPR spectrum of O−2 on GaAs surfaces”, D. J. Miller , D. HanemanIt is shown that a previous interpretation of hyperfine structure in the O−2 — GaAs surface EPR spectrum is incorrect. The experimental spectrum is reproduced and re-interpreted in a consistent way. The surface Ga orbital is almost entirely p-like. (Read more)
- 246. Phys. Lett. A 60, 55 (1977) , “Oxygen-vibrational bands in irradiated silicon*1”, Y. H. Lee, J. C. Corelli, J. W. Corbett.A correlation is made between the EPR spectra and the IR absorption bands for the known multivacancy-oxygen complexes in irradiated silicon. (Read more)
- 247. Jpn. J. Appl. Phys. 16, 233 (1977) , “Injection-Enhanced Dislocation Glide under Uniaxial Stress in GaAs-(GaAl)As Double Heterostructure Laser”, Taibun Kamejima, Koichi Ishida, Junji MatsuiBy applying uniaxial stresses of the order of 108-9 dyn/cm2 to (GaAs-(GaAl)As DH lasers in addition to the forward bias current, the development of <110> straight dark lines is observed in the electron beam induced junction current mode using an SEM. They are identified... (Read more)
- 248. J. Phys. Soc. Jpn. 43, 1286 (1977) , “Phase Diagram of an Exciton in the Phonon Field ”, Atsuko SumiIt is shown that an electron and a hole interacting mutually through the Coulomb force in the acoustic-phonon field take, within the adiabatic approximation, four possible phases depending upon the coupling constants: the lowest state is the free exciton in phase[I], the large-radius self-trapped... (Read more)
- 249. J. Appl. Phys. 48, 3950 (1977) , “Defect structure of 100 dark lines in the active region of a rapidly degraded Ga1–xAlxAs LED”, Osamu Ueda, Shoji Isozumi, Tsuyoshi Kotani, and Toyoshi YamaokaThe 100 dark-line defects (DLD's) in the active region of a rapidly degraded Ga1xAlxAs LED were observed by transmission electron microscopy (TEM). Dislocation networks, which contain dislocation dipoles and a number of dislocation loops, were associated... (Read more)
- 250. IEEE J. Quantum Electron. QE-13, 564 (1977) , “The New Origin of Dark-Line Defects in Planar-Stripe DH Lasers”, HIDEO SAITO, TSUYOSHI KAWAKAMI
- 251. Appl. Phys. Lett. 30, 368 (1977) , “The origin of dislocation climb during laser operation”, S. O'Hara, P. W. Hutchinson, P. S. DobsonThe origin of the dislocation climb which takes place in the presence of electron-hole recombination in laser structuresis discussed. TEM studies on lasers which have been degraded by either forward bias or by optical pumping show that the climb dipoles are extrinsic in both cases. In addition,... (Read more)
- 252. Appl. Phys. Lett. 31, 142 (1977) , “EPR of a Thermally Induced Defect in Silicon”, Y. H. Lee, R. L. Kleinhenz, and J. W. CorbettTwo EPR spectra are resolved in quenched silicon; one is attributed to a surface damage formed during the quench and the other to the interstitial iron (Fe0) previously identified by Woodbury and Ludwig in Fe-diffused silicon. The enthalpy and entropy for the Fe0 formation are... (Read more)
- 253. Surf. Sci. 75, 681-688 (1978) , “EPR centres at a gas-solid interface induced by a microwave gas plasma”, B. P. Lemke and D. HanemanDetails are reported for EPR centres induced in various samples after operating a cyclotron resonance type gas discharge inside a vacuum envelope within a microwave cavity. In the case of vacuum crushed GaAs, centres identified as O−3 were induced on the surfaces at 100 K. The powder... (Read more)
- 254. Sov. Phys. Solid State 20, 178 (1978) , “Influence of temperature on spin-spin interaction of nitrogen and nickel centers in diamond”, V. K. Bezobchuk, A. B. Brik, I. V. Matyash, Yu. V. Fedotov
- 255. Solid State Commun. 25, 1113-1116 (1978) , “ESR assessment of 3d7 transition metal impurity states in GaP, GaAs and InP”, U. Kaufmann , J. SchneiderPhoto-sensitive electron spin resonance of the 3d7-ions Fe+, Co2+, Ni3+ has been detected and analysed in GaP, GaAs and InP. For GaP : Ni3+, hyperfine interaction with the four nearest P31-ligands could be resolved. (Read more)
- 256. Solid State Commun. 25, 77-80 (1978) , “Exchange broadened, optically detected ESR spectra for luminescent donor-acceptor pairs in Li doped ZnO”, R. T. Cox, D. Block, A. Hervé, R. Picard and C. SantierR. HelbigApplication of optically detected ESR to the yellow photoluminescence of Li doped ZnO gives ESR spectra for shallow donor - lithium acceptor pairs, showing that at least a fraction of the yellow emission is donor-acceptor (D-A) luminescence. The distribution of separations rDA gives a spectrum of... (Read more)
- 257. Solid State Commun. 25, 987 (1978) , “EPR Spectra of Heat-Treatment Centers in Oxygen-Rich Silicon”, S. H. Muller, M. Sprenger, E. G. Sieverts and C. A. J. AmmerlaanAfter heat-treatment of oxygen-rich silicon at 410–550 °C ten different EPR spectra were observed. Nine of these are new spectra, seven of them reveal 2mm symmetry for the corresponding heat-treatment center, thereby reducing considerably the number of possible atomic configurations. In... (Read more)
- 258. Solid State Commun. 26, 255 (1978) , “EPR STUDIES OF A TWO-NITROGEN-ATOM CENTRE IN NATURAL, PLASTICALLY-DEFORMED DIAMOND”, C. M. WelbournThe hyperfine structure of an EPR system in a natural, brown diamond implies that the system is due to a centre containing two nitrogen atoms on almost equivalent sites. X-ray topographic evidence shows that the sample has been plastically deformed and it is suggested that a possible model for the... (Read more)
- 259. Solid State Commun. 26, 779-781 (1978) , “Motional effects in the EPR-spectrum of Cu-H-centers in ZnO”, D. ZwingelAt low temperatures, the EPR signal of a Cu2+ center is observed in ZnO single crystals doped both with copper and hydrogen. A clear effect of line narrowing on the copper hfs-lines is observed at T=16K. It is discussed in the model of a Cu-(OH) complex taking into account the thermally induced... (Read more)
- 260. Solid State Commun. 27, 867 (1978) , “Localization of the Fe0-Level in Silicon”, H. Feichtinger, J. Waltl and A. GschwandtnerSilicon samples were quenched from 1250°C – 1300°C and the 95K Fermi level was calculated from Hall effect data. The same samples were used to determine the intensity of the EPR spectrum at 95K associated with the iron interstitial (Fe°). In carefully selected samples, complete or... (Read more)
- 261. Solid State Commun. 28, 221 (1978) , “On the Production of Paramagnetic Defects in Silicon by Electron Irradiation”, E. G. Sieverts, S. H. Muller and C. A. J. AmmerlaanMonocrystalline silicon samples of different impurity contents have been irradiated with 1.5 MeV electrons in order to produce divacancies in their negative charge state. In these samples different combinations of defects have been observed with electron paramagnetic resonance. The conditions for... (Read more)
- 262. phys. stat. sol. (b) 85, 525 (1978) , “EPR of Lithium in Mechanically Affected Silicon”, M. Höhne.An intense narrow EPR spectrum is observed at 20 and 1.5 K in lithium doped silicon, which has been mechanically affected. The spectrum exhibits an angular dependent, only partly resolved structure. The spectra at the different temperatures can be explained by assuming lithium donors in rhombic... (Read more)
- 263. phys. stat. sol. (b) 86, 119 (1978) , “Nonrandom Strain in "crushed" silicon. EPR of thermally excited lithium donors”, M. Höhne.Si:Li single crystals with crushed surface layers are investigated by EPR. Measurements at 1.5 K show that these layers, which contain in the outer part also the dangling bond centre with g = 2.0055, nearly preserve their crystalline order, but exhibit strains preferentially perpendicular to the... (Read more)
- 264. phys. stat. sol. (b) 86, 269 (1978) , “ESR from Boron in Silicon at Zero and Small External Stress I.. Line Positions and Line Structure”, H. Neubrand.ESR observations at zero external stress of the shallow acceptor centre boron in silicon are reported for the first time. These observations have become possible by the high degree of crystal perfection attainable today in Si-crystal growth. The spectrum, its angular and uniaxial pressure dependence... (Read more)
- 265. phys. stat. sol. (b) 90, 301 (1978) , “ESR from Boron in Silicon at Zero and Small External Stress II..Linewidth and Crystal Defects”, H. Neubrand.Observations of the ESR lineshape of the shallow acceptor centre B in silicon at zero external stress are reported. The broadening of two ∆M = 1 transitions can be well fitted by a Voigt profile. The Lorentzian part of the fit is shown to behave in full accordance with the theory of strain... (Read more)
- 266. phys. stat. sol. (a) 50, 237 (1978) , “High-Temperature Ion Implantation in Diamond”, Y. H. Lee, P. R. Brosious, J. W. CorbettC+ and N+ implantation into type IIa diamond are performed at various temperatures (25 to 1000°C) and ion-induced damage is studied by EPR measurements at 1.2 to 300 K. Hot implantation at 1000°C results in a reduced spin density of “amorphous” carbon by an order of... (Read more)
- 267. Phys. Rev. B 17, 2081 (1978) , “ESR of the doubly ionized Cr acceptor and infrared luminescence of Cr in GaP:Cr”, U. Kaufmann and W. H. KoschelAfter optical excitation a broad isotropic electron-spin-resonance (ESR) signal with g=1.999 has been observed in chromium-doped GaP. It is attributed to an isolated Cr+ (3d5) center, presumably on a Ga site, which may be viewed as the doubly ionized Cr acceptor. The low-energy... (Read more)
- 268. Phys. Rev. B 17, 4130 (1978) , “Erratum: EPR of a Jahn-Teller Distorted <111> Carbon Interstitialcy in Irradiated Silicon [Phys. Rev. B 9, 2607 (1974)]”, K. L. Brower.Due to a computational error, the numbers in table Ⅲ are incorrect: the corrected Table Ⅲ is listed below: (Read more)
- 269. Phys. Rev. B 18, 6834 (1978) , “Divacancy in Silicon: Hyperfine Interactions from Electron-Nuclear Double-Resonance Measurements. II”, E. G. Sieverts, S. H. Muller, and C. A. J. AmmerlaanThe Si-G7 EPR spectrum, which is attributed to the negative charge state of the divacancy in silicon, was investigated by electron-nuclear double resonance. Hyperfine interactions between the unpaired defect electron and various 29Si nuclei were determined to obtain detailed information... (Read more)
- 270. J. Vac. Sci. Technol. 15, 1267 (1978) , “Wave functions and (110) surface structure of III–V compounds”, D. J. Miller and D. HanemanNew electron paramagnetic resonance determinations of the dangling orbital on Ga atoms on the cleavage surfaces of GaP are compared with corresponding data for GaAs and A1Sb. Using a bond-orbital approach the (110) surface structure for all three compounds is reconstructed, with the surface cation... (Read more)
- 271. J. Vac. Sci. Technol. 15, 1298-1310 (1978) , “Reactions of oxygen with ZnO–100-surfaces”, W. GöpelInvestigations are reported on the reaction of oxygen with electrostatic neutral ZnO100-surfaces studied by means of AES, LEED, EPR, thermal desorption spectroscopy, and isotopic exchange as well as changes in the surface conductivity and work function. Geometric and electronic structures of... (Read more)
- 272. J. Appl. Phys. 49, 2401-2406 (1978) , “Resistance changes induced by electron-spin resonance in ion-implanted Si : P system”, K. Murakami, S. Namba, N. Kishimoto, K. Masuda, K. GamoThe ESR-induced changes in the dc resistance, /||ESR, of P-ion-implanted silicon have been observed for the first time. The transfer of absorbed Zeeman energy at liquid-He temperature has been investigated. The /||ESR signals observed were a narrow line with a g value of... (Read more)
- 273. Thermochim. Acta 29, 247-252 (1979) , “Combined EPR and TG techniques : comparison of the thermal reduction of chromium (VI) ions in some zinc chromates and chromate-oxalate mixtures*1”, Z. Gabelica , E. G. DerouaneR. HubinLower oxydation state chromium species which are successively formed and stabilized upon thermal reduction of chromate (VI) ions, are studied by combined EPR and TG-techniques.The spontaneous oxygen release occuring during the vacuum thermal treatment of some zinc chromates leads to the formation of... (Read more)
- 274. Thermally stimulated relaxation in solids 93 (1979) , ,P. Braeunlish , “Space-charge spectroscopy in semiconductor”, D.V.Lang
- 275. Surf. Sci. 82, 102-108 (1979) , “Structure of IlI–V compound (110) surface regions from EPR data and elastic energy minimisation calculations”, D. J. Miller and D. HanemanThe structure of the first several layers of the (110) surfaces of GaAs, AlSb and GaP are obtained by two methods. In the first, electron paramagnetic resonance data is combined with bond orbital considerations to yield first layer reconstructions. In the second method, the surface energy is... (Read more)
- 276. Sov. Phys. Solid State 21, 1852 (1979) , “Nature of paramagnetic centers in iron-doped GaAs and GaP”, V. I. Kirillov , V. V. Teslenko
- 277. Solid State Commun. 30, 211 (1979) , “IMAGING OF PARAMAGNETIC CENTRES IN DIAMOND”, M. J. R. Hoch and A. R. DayAn imaging method for determining the spatial distribution of paramagnetic nitrogen centres in diamond is described. Results are presented for a sample consisting of two small type IB diamonds. (Read more)
- 278. Solid State Commun. 32, 205-208 (1979) , “The origin of sharp near infrared transitions in chromium doped III–V semiconductors”, A. M. WhiteIt is contended that the sharp emission and absorption lines seen in GaAs:Cr and GaP:Cr at 0.839 eV and 1.029 eV are due to a type of excitonic recombination at isoelectronic sites involving chromium. This assignment contrasts strongly with the widely accepted model involving an internal d-d... (Read more)
- 279. Solid State Commun. 32, 399-401 (1979) , “Pulsed far-infrared spectroscopy of GaAs:Cr at high magnetic fields in the field-modulation mode”, R. J. Wagner and A. M. WhiteA magnetic field-modulation technique has been developed for sensitive far infrared electron paramagnetic resonance (EPR) spectroscopy on Cr2+ centers in GaAs. A hundred-fold improvement in signal-to-noise ratio relative to non-modulation techniques was obtained. The results of this experiment have... (Read more)
- 280. phys. stat. sol. (a) 55, 251 (1979) , “Photo-EPR of Dislocations in Silicon”, R. Erdmann, H. Alexander.The dependence of the EPR spectrum of dislocations in deformed silicon on illumination with monochromatic light reveals the two EPR centers Si - K1 (S < 1/2) to be different ionization states of one and the same dislocation center. The energy level separating these ionization states lies near the... (Read more)
- 281. Phys. Rev. B 19, 1015 (1979) , “Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-doped AlxGa1-xAs”, D. V. Lang, R. A. Logan, M. JarosPhotocapacitance measurements have been used to determine the electron photoionization cross section of the centers responsible for persistent photoconductivity in Te-doped AlxGa1-xAs. The cross-section data, which have been obtained at various temperatures and for crystals of... (Read more)
- 282. Phys. Rev. B 20, 795 (1979) , “Effects of uniaxial stress and temperature variation on the Cr2+ center in GaAs”, J. J. Krebs and G. H. StaussThe effects both of applied uniaxial stress and of temperature variation on the EPR spectrum of Cr2+ in GaAs have been studied. The rapid stress-induced alignment of the Cr2+ centers at 4.2 K shows that the observed tetragonal symmetry is due to the Jahn-Teller effect as was... (Read more)
- 283. J. Phys. Chem. 83, 3462-3467 (1979) , “Dynamic Interchange among Three States of Phousphorus 4+ in ?-Quartz”, Y. Uchida, J. Isoya, J. A. WeilDynamic averaging due to electron jumping among three states with different sp hybrid directions in the P4+ center [PO4]0 in α-quartz has been studied by single-crystal electron paramagnetic resonance. The spin-Hamiltonian matrices g and Aslp for low temperature (i.e., C140 K) spectra P(І) and P(Ⅱ) and for high temperature spectrum P(A) are reported. For each crystal site, the line positions of P(A) agree well with those derived from the matrices measured for the three states. i.e., with weighted averages including P(І) and the two symmetry-related P(Ⅱ) spectra. (Read more)
- 284. J. Non-Cryst. Solids 32, 313-326 (1979) , “OXYGEN-ASSOCIATED TRAPPED-HOLE CENTERS IN HIGH-PURITY FUSED SILICAS”, M. Stapelbroek, D. L. Griscom, E. J. Friebele and G. H. Sigel, Jr.Two distinct oxygen-associated trapped-hole centers (OHCs) are identified in samples of room-temperature γ-irradiated, high-purity fused silica. One, which we label the "wet" OHC, predominates in the high-OH-content (wet) silicas while the other, the "dry" OHC, is more... (Read more)
- 285. J. Non-Cryst. Solids 32, 327-338 (1979) , “ELECTRON SPIN RESONANCE AND HOPPING CONDUCTIVITY OF a-SiOx”, E. Holzenkmpfer, F. -W. Richter, J. Stuke, U. Voget-GroteAmorphous SiOx-layers with O < x < 2 have been prepared by evaporation of Si at oxygen pressures of 10−6 … 10−3 mbar. The composition of the samples was determined by proton backscattering. The band gap, derived from optical measurements, increases with rising oxygen... (Read more)
- 286. J. Non-Cryst. Solids 34, 339-356 (1979) , “ESR and optical absorption of cupric ion in borate glasses”, H. Hosono, H. Kawazoe and T. KanazawaESR and optical absorption of Cu2+ were measured in xNa2O(100−x)B2O3 (1 ≤ x ≤ 75), x ZnO(100−x)B2O3 (46 ≤ x ≤ 64) and x Pb(100−x)b2O3 (20 ≤ x ≤ 75) glasses, where x is expressed in mol.%. Spin hamiltonian parameters and ligand field... (Read more)
- 287. J. Appl. Phys. 50, 280 (1979) , “The effect of oxidation on the diffusion of phosphorus in silicon”, R. Francis and P. S. DobsonThe diffusion of phosphorus from a thick epitaxial layer into a silicon substrate has been investigated using the spreading-resistance technique. By comparing the diffusion profile under a free oxidized surface with the profile under a masked surface, it has been shown that surface oxidation... (Read more)
- 288. J. Appl. Phys. 50, 3721 (1979) , “Catastrophic damage of AlxGa1–xAs double-heterostructure laser material”, C. H. Henry, P. M. Petroff, R. A. Logan, and F. R. MerrittWe carry out a detailed study of catastrophic degradation (CD) in DH laser material from which we reach two conclusions. First, local melting occurs and is due to intense nonradiative recombination of minority carriers at a cleaved surface or at a defect. The minority carriers are generated by... (Read more)
- 289. J. Appl. Phys. 50, 5425 (1979) , “EPR investigations of the defect chemistry of semi-insulating GaAs : Cr”, A. Goltzené, G. Poiblaud, and C. SchwabThe effects of some heat treatments under various atmospheres (vacuum, As, Ga2O3, or H2) on GaAs : Cr samples have been investigated by EPR. The equilibria between the two valence states Cr + and Cr2 + seem to depend on various parameters such... (Read more)
- 290. J. Appl. Phys. 50, 5847-5854 (1979) , “ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafers”, P. J. Caplan, E. H. Poindexter, B. E. Deal, R. R. RazoukThe ESR Pb center has been observed in thermally oxidized single-crystal silicon wafers, and compared with oxide fixed charge Qss and oxidation-induced interface states Nst. The Pb center is found to be located... (Read more)
- 291. J. Appl. Phys. 50, 6251 (1979) , “EPR determination of the concentration of chromium charge states in semi-insulating GaAs : Cr”, G. H. Stauss, J. J. Krebs, S. H. Lee, and E. M. SwiggardChromium can assume three different charge states in semi-insulating GaAs :Cr. An EPR-optical method is described which allows the Cr concentration in each of these states to be quantitatively determined. Typical results are given for a number of Cr-doped GaAs samples. Journal of Applied... (Read more)
- 292. J. Appl. Phys. 50, 6334 (1979) , “The sulfur-related trap in GaAs1–xPx”, R. A. Craven and D. FinnA systematic study has been made of the deep level introduced into GaAs1xPx alloy material by S doping. Conclusive documentation of the linear relationship between S concentration and the deep-level trap concentration is presented for x?0.4. The... (Read more)
- 293. J. Appl. Phys. 50, 6643 (1979) , “TEM observation of catastrophically degraded Ga1–xAlxAs double-heterostructure lasers”, Osamu Ueda, Hajime Imai, Tsuyoshi Kotani, Koichi Wakita, Hideho SaitoDefect structures of degraded GaAs/Ga1xAlxAs double-heterostructure (DH) lasers applied with pulsed current under high current density are studied by transmission electron microscopy. Several kinds of defects are observed corresponding to the 110 dark-line... (Read more)
- 294. J. Appl. Phys. 50, 765 (1979) , “Defect structure of degraded Ga1–xAlxAs double-heterostructure light-emitting diodes”, Osamu Ueda, Shoji Isozumi, Shigenobu Yamakoshi, and Tsuyoshi KotaniThe defect structure of degraded Ga1xAlxAs double-heterostructure (DH) light-emitting diodes (LED's) was investigated by electroluminescence (EL) topography and transmission electron microscopy (TEM). Two types of dark-line defects (DLD's), 100 DLD's and 110... (Read more)
- 295. J. Appl. Phys. 50, 8095 (1979) , “Comparison of two kinds of oxygen donors in silicon by resistivity measurements”, Akihiro Kanamori and Masaru KanamoriDonor formation during heat treatment of silicon in the 550800 °C temperature range has been investigated by resistivity measurements. The maximum donor concentration obtained here is about 1×1016/cm3 in p-type Czochralski-grown silicon. The donor is... (Read more)
- 296. Appl. Phys. Lett. 35, 211 (1979) , “Self-diffusion in intrinsic silicon”, Ludomir Kalinowski and Remy SeguinThe silicon self-diffusion in intrinsic silicon was investigated by a new method using stable isotope 30Si and the ion-analyzer technique. The temperature dependence of the diffusion coefficient was obtained in the range from 885 to 1175 °C from which an activation energy 110.6... (Read more)
- 297. Sov. Phys. Semicond. 14, 1277 (1980) , “Photo-Electron Spin Resonance of K Centers in Electron Irradiated Silicon”, L. S. Vlasenko, A. A. Lebedev, V. M. Rozhkov.The ESR method was used to study photoexcited K centers in n-type silicon irradiated with 30 MeV electrons. The investigation was carried out in the temperature range 77-160ºK. It was found that the ESR spectrum of the K centers appeared in electron-irradiated n-type silicon when this material was illuminated with light of photon energy hν > 0.76 eV and it was observed for a long time after the end of illumination. The use of longer light wavelength resulted in the disappearance (quenching) of the ESR spectrum of the K centers. A study was made of the kinetics of the excitation and quenching of the ESR spectra of the K centers by photons of different energies and the spectral dependence of the photoionization cross section of the K centers was recorded. The optical and thermal ionization energies of these centers. as well as the carriercapture cross sections were determined.
- 298. Solid State Commun. 34, 803 (1980) , “Spin dependent surface recombination in silicon p-n junctions: The effect of irradiation”, D. Kaplan and M. PepperWe present the results of an investigation of spin dependent recombination in (100) oriented, gate controlled Si diodes irradiated by 30 keV electrons. After irradiation, recombination at the Si---SiO2 interface is increased, and saturation of the spin resonance increases the diode forward current... (Read more)
- 299. Solid State Commun. 36, 15-17 (1980) , “Submillimeter EPR evidence for the As antisite defect in GaAs”, R. J. Wagner, J. J. Krebs , G. H. Stauss , A. M. WhiteA new EPR spectrum has been observed in semi-insulating GaAs with a submillimeter laser magnetic resonance spectrometer. The spectrum is isotropic with g = 2.04 ± 0.01 at . The hyperfine interaction parameter | A | ([ = 3/2) is 0.090 ± 0.001 cm-1. The spectrum is attributed to the As... (Read more)
- 300. Solid State Commun. 36, 897-900 (1980) , “EPR measurements on chromium doped GaAs, GaP and InP”, N. K. Goswami, R. C. Newman and J. E. WhitehouseEPR measurements have been made on chromium doped GaAs samples at 4.2 K. An n-type sample doped with chromium and silicon was irradiated with 2 MeV electrons to lower the Fermi level. No resonance from substitutional Cr+ (3d5) was detected, although the Crs 2+ spectrum was observed. The generally... (Read more)
- 301. phys. stat. sol. (b) 99, 651 (1980) , “Electron Paramagnetic Resonance of Gold in Silicon.I. Single Atoms; Strong Nuclear Quadrupole Effect”, M. Höhne.In Si : Au rapidly quenched two centres are observed by EPR, the first of which is investigated in this paper. The spectrum is characterized by a dominating Zeeman interaction and by a nuclear quadrupole interaction large compared to the hyperfine interaction. Passage conditions depend on the... (Read more)
- 302. Phys. Rev. Lett. 44, 1627 (1980) , “Jahn-Teller-Distorted Nitrogen Donor in Laser-Annealed Silicon”, Keith L. BrowerSubstitutional nitrogen donors in single-crystal silicon have been produced by pulsed ruby-laser annealing of amorphous silicon created by 41015 160-keV (0.995 28Si+ + 0.005 14N2+)/cm2. EPR measurements indicate that these... (Read more)
- 303. Phys. Rev. Lett. 44, 593 (1980) , “Negative-U Properties for Point Defects in Silicon ”, G. D. Watkins and J. R. Troxell*Experimental evidence is presented in support of a recent suggestion by Baraff, Kane, and Schlüter that the isolated lattice vacancy in silicon is an Anderson negative-U system. The second donor level (+/++) (of charge state + if defect level is occupied by an electron; ++, if unoccupied) is... (Read more)
- 304. Phys. Rev. B 21, 4951 (1980) , “Radiation defects in ion-implanted silicon. II. Mössbauer spectroscopy of 119Sn defect structures from implantations of radioactive tellurium”, A. Nylandsted Larsen*, G. Weyer, and L. NanverDefect structures containing Sn impurity atoms in silicon have been studied by Mössbauer emission spectroscopy on the 24-keV transition of 119Sn. The defects have been produced by ion implantation of radioactive 119mTe. This decays via the decay chain... (Read more)
- 305. Phys. Rev. B 22, 2050 (1980) , “GaAs:Cr3+(3d3)an orthorhombic Jahn-Teller center with a stress-dependent reorientation rate”, G. H. Stauss and J. J. KrebsThe Cr3+(3d3) EPR center in GaAs has been investigated using controlled uniaxial stress at temperatures from 1.8 to 4.2 K. Stresses up to 1200 kg/cm2 were applied along the [001], [111], [110], and [112] axes. The rapidity of stress alignment of the distortions at... (Read more)
- 306. Phys. Rev. B 22, 3141 (1980) , “New EPR data and photoinduced changes in GaAs:Cr. Reinterpretation of the “second-acceptor” state as Cr4+”, G. H. Stauss, J. J. Krebs, S. H. Lee, and E. M. SwiggardSeveral samples with Fermi levels ranging from the valence to the conduction band show that the resonance previously attributed to Cr1+ is due to Cr4+, and no additional signal is observed under conditions where Cr1+ would be expected to exist. The double-acceptor... (Read more)
- 307. Phys. Rev. B 22, 921 (1980) , “Interstitial Boron in Silicon: A negative-U System”, J. R. Troxell, G. D. Watkins.An electrical level 0.45 eV below the conduction band is detected by deep-level-capacitance transient spectroscopy (DLTS) in boron-doped silicon irradiated at 4.2 K by 1.5-MeV electrons. This level is attributed to interstitial boron. Greatly enhanced annealing of the level is observed under... (Read more)
- 308. Jpn. J. Appl. Phys. 19, L335 (1980) , “Isothermal Capacitance Transient Spectroscopy for Determination of Deep Level Parameters ”, Hideyo Okushi and Yozo TokumaruA new measurement method for deep levels in semiconductors is proposed, by which the measurement of the transient change of capacitance is performed under an isothermal condition (Isothermal Capacitance Transient Spectroscopy). The method allows us to construct a precise measurement and analysis... (Read more)
- 309. J. Appl. Phys. 51, 1484 (1980) , “The Solution of Iron in Silicon”, E. Weber, H. G. Riotte.The solution of iron in silicon has been examined by instrumental neutron activation analysis (NAA) and EPR of quenched samples. It was possible to obtain the total iron concentration and the concentration of interstitial iron for each specimen as a function of temperature. During the heat treatment... (Read more)
- 310. J. Appl. Phys. 51, 419 (1980) , “Optically induced transient electron paramagnetic resonance phenomena in GaAs:Cr”, A. M. White, J. J. Krebs, and G. H. StaussThe dynamics of EPR spectra of the charge states of Cr in GaAs during and following optical excitation are profoundly determined by the presence of other traps. Transients are slow, nonexponential, not thermally activated, and sample dependent. We show that the instability of Cr1 + and... (Read more)
- 311. Hyperfine Interactions 7, 449 (1980) , “Mössbauer study of 119Sn Defects in Silicon from Ion Implantations of Radioactive 119In ”, Weyer G.1 Damgaard S.1 Petersen J. W.1 and Heinemeier J.Radioactive 119In+ions (T1/2 = 2.1 min) obtained from the ISOLDE facility at CERN have been implanted into silicon single crystals at room temperature. Mössbauer emission spectra from the 24 keV γ-radiation of the daughter 119Sn have been measured by fast resonance-counting technique. Five independent lines, characterized by their hyperfine parameters and Debye temperatures, have been found in the spectra. From the bonding configurations, deduced for the Sn-impurity atoms, these are concluded to be located in four different defects in the silicon lattice. Simple models are proposed for the defects. (Read more)
- 312. Appl. Phys. Lett. 36, 171 (1980) , “Erratum: Self-diffusion in intrinsic silicon”, Ludomir Kalinowski and Remy SeguinIn the abstract the temperature range for diffusion should read "from 855 to 1175 ºC" in place of "from 885 ot 1175ºC", and the activation energy as "107.1 kcal/mole" instead of "110.6 kcal/mole". (Read more)
- 313. Appl. Phys. Lett. 36, 1711 (1980) , “Self-diffusion in silicon as probed by the ( p,) resonance broadening method”, J. Hirvonen and A. AnttilaThe self-diffusion preexponential factor D0=8.0 cm2/s and activation energy Q=4.1 eV for intrinsic silicon have been determined with the ( p,) resonance broadening method in the temperature region 9001100 °C, in a first application of this method... (Read more)
- 314. Sov. Phys. Solid State 23, 2126 (1981) , “Electron spin resonance of exchange-coupled vacancy pairs in hexagonal silicon carbide”, V. S. Va?ner, V. A. llin
- 315. Solid-State Electronics 24, 869 (1981) , “Theoretical and practical investigation of the thermal generation in gate controlled diodes ”, Jan van der Spiegel and Gilbert J. DeclerckThe different components of thermal generation in a gate controlled diode are studied theoretically and experimentally. Expressions for the generation current in the space charge layer, the diffusion current from the quasi-neutral bulk and the surface generation current are derived for a... (Read more)
- 316. Solid State Commun. 37, 371 (1981) , “A New EPR Center Due to Dislocations in Phosphorous Doped Silicon”, E. Weber and H. AlexanderIn plastically deformed, phosphorous doped silicon a new EPR center is found, Si-K7, which has to be ascribed to an impurity related defect in the dislocation core. From its concentration the accumulation of impurity atoms, supposedly phosphorous, in the dislocation core can be concluded. (Read more)
- 317. Solid State Commun. 40, 285-289 (1981) , “Anion antisite defects in GaAs and GaP”, T. L. Reinecke and P. J. Lin-ChungThe electronic properties of anion antisite defects and the related ideal cation vacancies are calculated based on tight-binding Hamiltonians and using a novel recursion method. For the antisite defects symmetric A1 states are found in the upper part of the fundamental gaps, and for the ideal... (Read more)
- 318. Solid State Commun. 40, 473-477 (1981) , “The observation of high concentrations of arsenic anti-site defects in electron irradiated n-type GaAs by X-band EPR”, N. K. Goswami, R. C. Newman and J. E. WhitehouseN-type GaAs doped with sulphur (2.8 × 1018 cm-3) has been subjected to 2 MeV electron irradiation in stages at room temperature and examined by the EPR technique. When the free carrier absorption is first eliminated no EPR signal is detected. After further irradiation, the spectrum of the As... (Read more)
- 319. phys. stat. sol. (b) 103, 519 (1981) , “Investigation of the Dislocation Spin System in Silicon as Model of One-Dimensional Spin Chains”, V. A. Grazhulis, V. V. Kveder, Yu. A. Osipyan.Magnetic properties of the dislocation dangling bond (DDB) spin system in silicon crystals are investigated by means of the EPR technique at T = (1.3 to 150) K. Experimental results are obtained which enable one to develop a one-dimensional model of the spin system according to which the DDB chains... (Read more)
- 320. phys. stat. sol. (b) 103, 519-528 (1981) , “Investigation of the dislocation spin system in silicon as model of one-dimensional spin chains”, V. A. Grazhulis, V. V. Kveder, Yu. A. OsipyanMagnetic properties of the dislocation dangling bond (DDB) spin system in silicon crystals are investigated by means of the EPR technique at T = (1.3 to 150) K. Experimental results are obtained which enable one to develop a one-dimensional model of the spin system according to which the DDB chains... (Read more)
- 321. phys. stat. sol. (b) 104, K79 (1981) , “Changes in the EPR of Gold in Silicon Induced by Light”, M. Höhne, A. A. Lebedev.Since a long time gold is known as a dopant in silicon, which strongly affects recombination processes /1/ and which produces an acceptor level 0.55 eV below the conduction band (CB) and a donor level 0.33 eV above the valence band (VB) /2/. Electric and photoelectric properties were thoroughly... (Read more)
- 322. phys. stat. sol. (b) 105, K91 (1981) , “Determination of the Zero-Field Splitting of Iron-Boron Pairs in Silicon”, W. Gehlhoff, K. H. Segsa, C. Meyer.In hte discussion of the omportant role of iron in connection with the formation of htermally induced defects in sillicon /1 to 4/ it seems to be expedient to remind of the fact that the direct detection of iron by EPR measurements is not restricted to the observation of neutral iron on a T... (Read more)
- 323. phys. stat. sol. (b) 108, 363 (1981) , “EPR Observation of an Au-Fe Complex in Silicon: I. Experimental Data”, R. L. Kleinhenz, Y. H. Lee, J. W. Corbett, E. G. Sieverts, S. H. Muller, C. A. J. Ammerlaan.After quenching of Au-doped FZ silicon an anisotropic axially symmetric EPR spectrum is observed. The spectrum exhibits a hyperfine interaction with 197Au nuclei (I = 3/2). In samples which were intentionally doped with isotopically enriched 57Fe (I = 1/2) an additional... (Read more)
- 324. phys. stat. sol. (a) 68, 561 (1981) , “Thermally-Induced Defects in Silicon Containing Oxygen and Carbon”, N. S. Minaev, A. V. MudryiThermal defect generation processes are investigated in heat-treated (250 to 600 ºC, 1 to 500 h) silicon crystals by a low-temperature photoluminescence method. In the spectral range from 0.75 to 1.20 eV, a number of emission bands are found. Some of these bands have been already observed in the... (Read more)
- 325. Phys. Rev. Lett. 47, 954 (1981) , “Reorientation of Nitrogen in Type-Ib Diamond by Thermal Excitation and Tunneling”, C. A. J. Ammerlaan, E. A. BurgemeisterThe rate of anneal of stress-induced ordering of isolated substitutional nitrogen impurities in diamond, measured in the temperature range 78K<T<200K, shows large deviations from Arrhenius-type behavior. It is concluded that in the temperature range considered, reorientation of the centers... (Read more)
- 326. Phys. Rev. B 23, 3920 (1981) , “Charge transfer Cr3+(3d3)?Cr2+(3d4) in chromium-doped GaAs”, G. Martinez, A. M. Hennel, W. Szuszkiewicz, M. Balkanski, B. ClerjaudResults on the absorption and electron paramagnetic resonance measurements on chromium-doped GaAs are reported. For p-type samples the main optical transitions are shown to be due to a photoionization process which has been measured as a function of temperature and hydrostatic pressure. A model,... (Read more)
- 327. Phys. Rev. B 23, 5335 (1981) , “Deep-level optical spectroscopy in GaAs”, A. Chantre, G. Vincent, D. BoisAn experimental method which we call deep-level optical spectroscopy (DLOS) is described. It is based on photostimulated capacitance transients measurements after electrical, thermal, or optical excitation of the sample, i.e., a diode. This technique provides the spectral distribution of both... (Read more)
- 328. Phys. Rev. B 24, 4571 (1981) , “Tellurium Donors in Silicon”, H. G. Grimmeiss, E. Janzn, H. Ennen, O. Schirmer, J. Schneider, R. Wrner, C. Holm, E. Sirtl, P. Wagner.The electronic properties of chalcogens as dopants in silicon are discussed with emphasis on tellurium. Tellurium give rise to two dominant donor levels which have been studied by junction space-charge techniques, infrared absorption, and ESR. Both donor levels exhibit excited states (Rydberg series... (Read more)
- 329. Jpn. J. Appl. Phys. 20(Suppl.20-1), 261 (1981) , “Isothermal Capacitance Transient Spectroscopy ”, Hideyo Okushi and Yozo TokumaruA new measurement method for deep levels in semiconductors is demonstrated, by which the measurement of the transient charge of capacitance is performed under an isothermal condition (IsothermalCapacitance Transient Spectroscopy). The method allows us to construct a precise measurement and analysis system by a programmable calculator. Detailed experiment and analysis by the method in the case of Au-doped Si indicate that the method is one of useful tools for spectroscopic analysis of deep levels in semiconductors. (Read more)
- 330. J. Chem. Phys. 74, 5436-5448 (1981) , “EPR and ab initio SCF–MO studies of the Si·H–Si system in the E[prime]4" align="middle"> center of -quartz”, J. Isoya, J. A. Weil, L. E. HalliburtonThe E[prime]4" align="middle"> center in irradiated -quartz has been studied by single-crystal EPR. The unpaired electron is shared mainly by two silicon ions Si(1, 2) with the larger fraction on Si(2). The spin-Hamiltonian parameter matrices , 1H,... (Read more)
- 331. J. Appl. Phys. 52, 879-884 (1981) , “Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers”, E. H. Poindexter, P. J. Caplan, B. E. Deal, R. R. RazoukInterface states and electron spin resonance centers have been observed and compared in thermally oxidized (111) and (100) silicon wafers subjected to various processing treatments. The ESR Pb signal, previously assigned to interface ·SiSi3 defects on (111)... (Read more)
- 332. Defects and radiation effects in semiconductors 19 (1981) , The Institute Physics,London,J. H. Albany , “Theory of silicon vacancy:an Anderson negative-U system”, G.A Braff and E.O Kane and M.schluter
- 333. Defects and radiation effects in semiconductors 199 (1981) , The Institute of Physics,London,J. H. Albany , “Negative-U for point defects in silicon”, G D Watkins,A P Chattaerjee,R D Harris
- 334. Defects and radiation effects in semiconductors 461 (1981) , The Institute of Physics,London, J. H. Albany , “Diffusion coefficient of self-interstitials determined by bulk stacking fault growth in cz silicon”, Kazumi Wada,Naohisa Inoue
- 335. Appl. Phys. Lett. 39, 706 (1981) , “Energy Levels and Solubility of Interstitial Chromium in Silicon”, H. Feichtinger and R. CzaputaThe electronic level of interstitial Cr in silicon according to the transition Cr0i" align="middle">Cr + i" align="middle">(3d63d5) was determined by correlating the electron paramagnetic resonance (EPR) signal of Cr + ... (Read more)
- 336. Appl. Phys. Lett. 39, 747 (1981) , “Optical assessment of the main electron trap in bulk semi-insulating GaAs”, G. M. MartinNear-infrared optical absorption in undoped bulk GaAs ingots is shown to be due essentially to the presence of the main deep donor EL2. Measurement of the corresponding absorption represents the first known method of quantitative determination of that level in semi-insulating material. Furthermore,... (Read more)
- 337. Solid State Commun. 43, 41 (1982) , “The Neutral Divacancy in Silicon”, E. G. Sieverts, J. W. Corbett.Extended Hückel Theory calculations have been carried out on a cluster of silicon atoms to examine the relative stability of two configurations of the divacancy: (1) two vacancies on adjacent sites, i.e. the "normal" divacancy configuration; and (2) two vacancies separated by two... (Read more)
- 338. Solid State Commun. 44, 285-286 (1982) , “Neutron-transmutation doping of GaAs — as studied by ESR”, J. Schneider and U. Kaufmann.Neutron (n0) transmutation doping of GaAs has been monitored by electron spin resonance (ESR). Strong evidence was obtained that, apart from fast neutron impact, AsGa antisite defects are also created by the γ- and β-emissions following thermal n0-capture. The AsGa defects, forming deep... (Read more)
- 339. Solid State Commun. 44, 369-372 (1982) , “Electronic structure calculation of Mn-doped GaAs”, Arnaldo Dal Pino, Jr. Adalberto Fazzio and JoséR. LeiteThe molecular cluster model, within the framework of the self-consistent field multiple scattering Xα method, is applied to calculate the electronic structure of a Mn substitutional impurity in GaAs. The charge states Mn3+, with spin configurations S = 0 and 2, and Mn2+, with S = 5/2, were... (Read more)
- 340. phys. stat. sol. (b) 109, 525 (1982) , “Electron Paramagnetic Resonance of Gold in Silicon. II. Cluster Centres”, M. Höhne.The interpretation of the EPR spectrum suggests two alternative models: five gold atoms or three gold atoms with two boron atoms, respectively, form a cluster occupying lattice sites and adjacent interstitial sites. This cluster tends to further precipitation. Both of the paramagnetic gold-related... (Read more)
- 341. phys. stat. sol. (b) 109, 83 (1982) , “EPR Observation of an Au-Fe Complex in Silicon II Electronic Structure”, E. G. Sieverts, S. H. Muller, C. A. J. Ammerlaan, R. L. Kleinhenz, J. W. Corbett.For a description of the Au-Fe complex which is discussed in Part I of this article, a model by Ludwig and Woodbury is adopted. This model does not allow for an analysis of the observed hyperfine interactions in a simple LCAO description. Instead a model of exchange coupled spins is proposed. The... (Read more)
- 342. phys. stat. sol. (b) 112, 695 (1982) , “EPR Investigation of Manganese-Boron Pairs in Silicon”, J. Kreissl, W. Gehlhoff.After manganese doping of low-resistivity B-doped p-silicon an EPR centre is detected, which could be identified in accordance with Ludwig and Woodbury as a manganese-boron pair, where a interstitially incorporated Mn2+ ion is located in the immediate vicinity of a B- ion on a... (Read more)
- 343. phys. stat. sol. (a) 72, 701-713 (1982) , “On the Energy Spectrum of Dislocations in Silicon”, V. V. Kveder, Yu. A. Osipyan, W. Schrter, G. Zoth.Using deep level transient spectroscopy (DLTS) the defects introduced into silicon by plastic deformation are investigated with respect to their capture and emission characteristics. In agreement with what has been found by electron spin resonance (EPR), kind and density of the detected localized... (Read more)
- 344. Phys. Rev. Lett. 48, 37 (1982) , “Optical Detection of Magnetic Resonance for a Deep-Level Defect in Silicon”, K. M. Lee, K. P. O'Donnell, J. Weber, B. C. Cavenett, and G. D. WatkinsOptical detection of magnetic resonance is reported for the 0.97-eV luminescence in neutron-irradiated silicon. The resonance is of an excited triplet (S=1) state of the defect, which is not the radiative state, known to be a singlet (S=0). The spectrum is unusual in that it is characteristic of a... (Read more)
- 345. Phys. Rev. Lett. 49, 1728 (1982) , “Positive Identification of the Cr4+ → Cr3+ Thermal Transition in GaAs”, D. C. Look, S. Chaudhuri, L. EavesTemperature-dependent Hall-effect measurements on two Cr-doped GaAs samples show a dominant center at E1=0.324-1.4×10-4T eV, with respect to the valence-band edge. By comparison with secondary-ion mass spectroscopy measurements of the Cr concentration, and recent EPR... (Read more)
- 346. Phys. Rev. B 25, 25 (1982) , “Electron Paramagnetic Resonance on Iron-Related Centers in Silicon”, Sara H. Muller, Gijs M. Tuynman, Eric G. Sieverts, and C. A. J. AmmerlaanThe behavior of interstitial iron in high-resistivity dislocation-free silicon has been studied by annealing and by electron irradiation and subsequent annealing. Annealing of iron-doped samples at temperatures above 120C yielded one, new electron paramagnetic resonance (EPR) spectrum labeled... (Read more)
- 347. Phys. Rev. B 25, 7731 (1982) , “Electron paramagnetic resonance parameters of substitutional Cr2+ impurity in GaAs by a cluster approach”, M. H. de A. Viccaro, S. Sundaram, and R. R. SharmaA cluster treatment incorporating Jahn-Teller distortion and covalency effects has been given for a substitutional Cr2+ impurity in GaAs to interpret the g factors and zero-field splitting parameters. Significant charge-transfer effects have been found to be present in this system. The g... (Read more)
- 348. Phys. Rev. B 26, 2296 (1982) , “Confirmation of the EPR identification of Cr4+ 3d2 in p-type Cr-doped GaAs by means of applied uniaxial stress”, J. J. Krebs and G. H. StaussUniaxial stress has been used to study the isotropic Cr-related EPR center in p-type GaAs: Cr. Stress linearly splits the EPR line into two components, showing that the center is due to substitutional Cr4+ 3d2 rather than interstitial Cr1+ 3d5. The stress... (Read more)
- 349. Phys. Rev. B 26, 6040 (1982) , “Deep-Level Nitrogen Centers in Laser-Annealed Ion-Implanted Silicon”, K. L. Brower.An electron-paramagnetic-resonance (EPR) study dealing with the means for introducing substitutional N into silicon and the structure of N centers is presented in this paper. Nitrogen can be introduced into crystalline silicon by N+ implantation and subsequent pulsed-ruby-laser annealing.... (Read more)
- 350. Phys. Rev. A 25, 1272 (1982) , “Muonium in diamond”, E. Holzschuh, W. Kndig, P. F. Meier, B. D. Patterson, J. P. F. Sellschop, M. C. Stemmet, H. AppelTwo muonium states have been found in diamond. "Normal" muonium shows an isotropic hyperfine interaction with a coupling constant A/h=371121 MHz. "Anomalous" muonium is described by a ?111? axially symmetric spin Hamiltonian with coupling constants extrapolated to 0 K |A?|/h=167.980.06... (Read more)
- 351. Nucl. Instrum. Methods Phys. Res. 199, 61-73 (1982) , “Comparison of nuclear and optical methods in the study of amorphized semiconductors and insulators”, Gerhard GötzThe damage and amorphization of implanted silicon is reported. The results of backscattering measurements (RBS) are presented and compared with results of optical measurements and EPR investigations. At low implantation temperatures the amount and depth distribution of the damage can be described by... (Read more)
- 352. J. Phys. D: Appl. Phys. 15, L183 (1982) , “Optically active nickel in synthetic diamond”, A. T. Collins, P. M. SpearDiamonds grown using a nickel catalyst-solvent have vibronic absorption systems with zero-phonon lines at 1.883 and 2.51 eV, and show absorption at the Raman frequency (1332 cm-1) in the defect-induced one-phonon absorption spectrum. Circumstantial evidence suggests that these... (Read more)
- 353. J. Phys. C: Solid State Phys. 15, 2059 (1982) , “Uniaxial stress analysis of the 0.79 eV vibronic band in irradiated silicon”, C P FoyThe 0.79 eV system is examined in absorption for the frst time and is found to consist of four lines between 0.79 and 0.8 eV. Uniaxial stress measurements on these four lines are reported and the symmetry of the centre is established as monoclinic I. The relative intensities of the stress-split... (Read more)
- 354. J. Phys. C: Solid State Phys. 15, L981 (1982) , “Carbon-12 hyperfine interaction of the unique carbon of the P2 (ESR) or N3 (optical) centre in diamond”, J. A. van WykThe latest model proposed for the P2 centre shows that the paramagnetic electron is associated mainly with one carbon atom. The observation of the carbon-13 hyperfine interaction with this carbon is reported, and the appropriate hyperfine parameters for this interaction are given. (Read more)
- 355. J. Electrochem. Soc. 129, 2292 (1982) , “Effect of Back-Side Oxidation on B and P Diffusion in Si Directly Masked with Si3N4 Films”, Shoichi Mizuo and Hisayuki HiguchiIt is found that the diffusion of B and P in the front surface of float zone Si wafers is enhanced by oxidation of the back-surfaceof the wafers. The range of diffusion enhancement at 1100°C is found to be much larger than previously reportedvalues; the range increases with oxidation time and the range for B agrees well with that for P. Moreover, the results areconsistent with the findings that B and P diffuse only by interstitials and that the range of oxidation-enhanced diffusion isdetermined by the diffusion of interstitials. (Read more)
- 356. J. Cryst. Growth 59, 357-362 (1982) , “Magnetic resonance studies of shallow donors in zinc oxide”, C. Gonzalez, D. Block, R. T. Cox and A. HervéShallow donors in ZnO were studied by electron spin resonance (ESR) and optically detected magnetic resonance (ODMR). Indium and gallium donors were identified by their hyperfine structure. They have g|| = 1.957 and g = 1.956 and the hyperfine constants are A(69Ga)=4.2 and A(115In)=36.6 G. The ESR... (Read more)
- 357. J. Cryst. Growth 59, 363-369 (1982) , “Electron spin resonance and cathodoluminescence in ZnO”, T. Wada, S. Kikuta, M. Kiba, K. Kiyozumi, T. Shimojo and M. KakehiThe ZnO samples were prepared by firing at 900°C, finely powdered material under different degrees of reduction. Measurements of the green cathodoluminescence (CL) were done by using a vacuum fluorescent display. The g values of ESR spectrum measured from the powders at 77 K were g|| =... (Read more)
- 358. J. Appl. Phys. 53, 4541 (1982) , “Electron paramagnetic resonance of extended defects in semi-insulating GaAs”, A. Goltzene, B. Meyer, and C. SchwabThe temperature dependence, over the 4.2100 K range, of the narrow EPR line, labeled X, with an isotropic value of g = 2.002 has been investigated in a semi-insulating GaAs:Cr sample. From its Curie-Weiss behavior, leading to a (T+13.1)1 law, it is... (Read more)
- 359. J. Appl. Phys. 53, 6140 (1982) , “Identification of AsGa antisites in plastically deformed GaAs”, E. R. Weber, H. Ennen, U. Kaufmann, J. Windscheif, J. Schneider, T. WosinskiAsGa antisite defects formed during plastic deformation of GaAs are identified by electron paramagnetic resonance (EPR) measurements. From photo-EPR results it can be concluded that the two levels of this double donor are located near Ec 0.75 eV and... (Read more)
- 360. J. Appl. Phys. 53, 6788 (1982) , “Diffusion of substitutional impurities in silicon at short oxidation times: An insight into point defect kinetics”, D. A. Antoniadis and I. MoskowitzOxidation-enhanced diffusion of phosphorus, arsenic, and boron and oxidation-reduced diffusion of antimony in silicon have been studied as a function of oxidation time. Data for the early phase of oxidation in dry oxygen from 5 to 60 min have been obtained. Oxidation-enhanced diffusivities show a... (Read more)
- 361. J. Appl. Phys. 53, 9214 (1982) , “Diffusion of indium in silicon inert and oxidizing ambients”, D. A. Antoniadis and I. MoskowitzThe diffusion of indium in silicon at 1000 °C has been measured in inert (dry nitrogen) and oxidizing (dry oxygen) ambients. It was found that, similarly to phosphorous, boron, and arsenic, indium experiences significant oxidation-enhanced diffusion. This result indicates that indium, like the... (Read more)
- 362. Appl. Phys. Lett. 40, 342 (1982) , “Origin of the 0.82-eV electron trap in GaAs and its annihilation by shallow donors”, J. Lagowski, H. C. Gatos, J. M. Parsey, K. Wada, M. Kaminska, and W. WalukiewiczThe concentration of the major electron trap (0.82 eV below the conduction band) in GaAs (Bridgman grown) was found to increase with increasing As pressure during growth. It was further found that (for a given As pressure) the concentration of this trap decreased with increasing concentration of... (Read more)
- 363. Appl. Phys. Lett. 40, 616 (1982) , “Oxidation-enhanced or retarded diffusion and the growth or shrinkage of oxidation-induced stacking faults in silicon”, T. Y. Tan and U. GöseleAn analysis of the conditions for obtaining oxidation-enhanced or retarded dopant diffusions (OED or ORD), in accordance with the stacking fault growth/shrinkage phenomena, is carried out for the oxidation of Si by assuming that vacancy and Si self-interstitials coexist at high temperatures and that... (Read more)
- 364. Appl. Phys. Lett. 41, 251-253 (1982) , “Defects and impurities in thermal oxides on silicon”, K. L. Brower, P. M. Lenahan, and P. V. DressendorferOxides grown at 1100 °C in dry oxygen for 60 min to a thickness of 1350 Å on silicon with and without subsequent forming gas anneals were 60Co irradiated at 4 K with doses up to 106 rad (Si). In situ electron paramagnetic... (Read more)
- 365. Appl. Phys. Lett. 41, 542-544 (1982) , “Effect of bias on radiation-induced paramagnetic defects at the silicon-silicon dioxide interface”, P. M. Lenahan and P. V. DressendorferElectron spin resonance measurements have been made on gamma-irradiated (111) Si/SiO2 structures as a function of bias across the oxide. We observe a large change in the density of radiation-induced paramagnetic Pb centers with bais. We conclude that... (Read more)
- 366. Sov. Phys. Semicond. 17, 412 (1983) , “Excited states of the Fe3+ ion in gallium arsenide and phosphide”, E. S. Demidov, A. A. Ezhevski?, and V. V. Karzanov.
- 367. Sov. Phys. Semicond. 17, 796 (1983) , “Investigation of structure defects in the GaAs:Mn system by the ESR method”, V. F. Masterov, S. B. Mikhrin, B. E. Samorukov, K. F. Shtel'makh
- 368. Solid State Commun. 46, 121 (1983) , “ENDOR Investigation of Tellurium Donors in Silicon”, J. R. Niklas and J. M. SpaethParamagnetic Te+ donors in silicon form deep level impurities. They were investigated with electron nuclear double resonance (ENDOR). The superhyperfine interaction with 12 shells of 29Si nuclei could be determined and it was confirmed that S = 1/2. 10 % of the unpaired spin... (Read more)
- 369. Solid State Commun. 47, 631 (1983) , “Hyperfine Interactions from EPR of Iron in Silicon”, E. G. Sieverts, S. H. Muller, C. A. J. Ammerlaan, E. R. Wever.At high microwave power very well resolved EPR spectra from isolated neutral interstitial iron atoms in silicon can be observed. From these spectra hyperfine interactions with at least three shells of neighbouring lattice sites, containing 18 or 22 atoms, can be determined. The localization of the... (Read more)
- 370. Physica B+C 116, 564-569 (1983) , “Experimental tests of non-thermal effect for pulsed-laser annealing by time-resolved reflectivity and EPR measurements”, K. Murakami, K. Masuda, Y. Aoyagi and S. NambaExperimental tests of non-thermal effect for pulsed laser annealing (PLA) of semiconductors have been done by means of two techniques. One is time-resolved reflectivity measurement during single 30-ps PLA of amorphous GaAs. An anomalous dynamic behavior is observed at an energy-density window, i.e.,... (Read more)
- 371. Physica B 116, 583-593 (1983) , “Investigations of well defined dislocations in silicon”, H. Alexander, C. Kisielowski-Kemmerich, E. R. WeberThe velocity v of dislocation half-loops introduced into swirl-free floating-zone grown undoped silicon has been measured at 420°C in the resolved shear stress range 30 <τ<300 MPa. Clearly impurity atoms interact with dislocations in this material. Using the starting value of v we found the two types of 60° dislocations, which are distinguished by the sequence of their partials, to have different velocities. Furtheron the velocity depends not only on τ, but also on the elastic strain of the lattice. In the second part the papers review EPR spectroscopy of plastically deformed silicon and collects new results on the activity of dislocations in this material as trapping / recombination centers (decay of photo-EPR, photoluminescence, EBIC microscopy and photoplastic effect). (Read more)
- 372. Physica 116B, 219 (1983) , “Negative-U Properties of the Lattice Vacancy in Silicon”, J. L. Newton, A. P. Chatterjee, R. D. Harris, G. D. Watkins.We present direct and unambiguous evidence that the donor levels of the silicon lattice vacancy are inverted in negative-U ordering, as originally suggested by Baraff et al. The second donor level, at Ev + 0.13 eV, lies above the first donor level, at Ev + 0.05 eV. First, we demonstrate that the Ev + 0.13 eV level is a donor state by the absence of the Poole-Frenkel effect in DLTS studies. Second, we describe a detailed EPR study of reactions involving hole transfer via the valence band between the vacancy and the shallow alminium accepter. By monitoring the intensity of the V+ and Also EPR signals, all aspects of the negative-U ordering appear to be confirmed. (Read more)
- 373. Physica 116B, 224 (1983) , “The Negatively Charged Vacancy in Silicon: Hyperfine Interactions from ENDOR Measurements”, M. Sprenger, S. H. Muller, C. A. J. Ammerlaan.The negatively charged lattice vacancy V- was produced in p-type aluminum doped silicon by 1.5 MeV electron irradiation at temperatures below 20 K. The Si-G2 EPR spectrum, which is associated with the negative charge state of the lattice vacancy, was investigated by electron nuclear double resonance. Hyperfine interactions between the unpairerd defect electron and 29Si nuclei on various lattice sites with respect to the vacancy were determined in order to obtain detailed information about the electron wave function. By symmetry, there are four distinguishable classes of hyperfine interaction tensors. Values for the contact term of the hyperfine interactions are reported for 27 shells containing 73 atoms. The one-electron LCAO scheme to describe the electron wave function is discussed. Also, the extension and shape of the defect electron distribution is discussed in an empirical manner. (Read more)
- 374. Physica 116B, 258 (1983) , “Origin of the 0.97 eV Luminescence in Irradiated Silicon”, K. P. Odonnell, K. M. Lee, G. D. Watkins.Optical detection of magnetic resonance studies are described for the well-studied optical center with zero phonon line at 0.97 eV in irradiated silicon. Analysis of the S = 1 ODMR spin Hamiltonian reveals a low symmetry (C1h) center and a resolved 29Si hyperfine interaction with a single silicon atom. In a specially enriched 13C doped sample we find additional hf interactions with two equivalent carbon atoms. At elevated temperatures, the defect reorients easily from one C1h distortion to another around a common <111> axis; during this reorientation the spin density remains located on the same silicon atom and the same carbon pair. Froom these results we construct a model comprising two adjacent (substitutional) carbon atoms and an interstitial silicon atom which has distorted out from a bond-centered position We conclude that the same defect gives rise to the Si-G11 EPR spectrum when positively charged. (Read more)
- 375. Physica 116B, 281 (1983) , “Excited Triplet States of Defects and Optical Nuclear Polarization in Silicon”, L. S. Vlasenko.Using the nuclear magnetic resonance (NMR) and electron spin resonance (ESR) techniques the processes of the optical polarization of the electron and nuclear spinis have been studied iin silicon containing the structure defects of various kinds. It has been established that such structure defects as radiation defects, thermal defects, nad dislocations to be under illumination in photo-excited triplet states with nonequilibrium spin polarizaton are respoonsibke for the appearance of the strong nuclear polarization independent on the light polarization. (Read more)
- 376. Physica 116B, 306 (1983) , “ESR of Fe-S Pairs in Silicon”, O. F. Schirmer.The ESR of a new Fe-S center in Si is reported. It is shown that the g-values of three of the known Fe-S pairs are determined by exchange interaction of the angular momentum of Feio with that of a nearby S = 1/2 ion, which is likely to be S+ or (S-S)+. The analysis uses an analogy to the O2--centers in the alkali halides. Orbach relaxation of the ESR of the new Fe-S center shows that an excited state lines 8.4 meV above the groundstate. (Read more)
- 377. Physica 116B, 332 (1983) , “The Structure of the Pt- Center in Silicon”, J. C. M. Henning.Electron spin resonance (ESR), strain-moduled electron spin resonance (SMESR) and infrared absorption (IR) experiments are reported on the platinum accepter (Pt-) in silicon. It turns out that in the concentration range 1016 < [Pt] < 1017 cm-3 Pt is exclusively present as substitutional-interstitial (Ptb-Pti) pairs. In n-type material the charge state may be either Pt--Ptio or Ptso-Ptio, depending on the Fermi energy. (Read more)
- 378. Physica 116B, 564 (1983) , “Experimental Tests of Non-Thermal Effect for Pulsed-Laser Annealing by Time-Resolved Reflectivity and EPR Measurements”, K. Murakami, K. Masuda, Y. Aoyagi, S. Namba.Experimental tests of non-thermal effect for pulsed laser annealing (PLA) of semiconductor have been done by means of two techniques. One is time-resolved reflectivity measurement during single 30-ps PLA of amorphous GaAs. An anomalous dynamic behavior is observed at an energy-density window, i.e, a reflectivity dip appears after the disappearance of the high reflectivity phase, concomitant with final production of a new amorphous GaAs state. This result cannot be interpreted in terms of the simple thermal effect. The other is EPR measurement of Si samples which are implanted and then annealed by 40-ns pulsed laser. No EPR results of N donors in Si support positively a non-thermal effect, while it is difficult to explain EPR results of laser-induced paramagnetic defects only by the simple thermal annealing model. (Read more)
- 379. Physica 116B, 583 (1983) , “Investigations of Well Defined Dislocations in Silicon”, H. Alexander, C. Kisielowski-Kemmerich, E. R. Weber.The velocity v of dislocation half-loops introduced into swirl-free floating-zone grown undoped silicon has been measured at 420ºC in the resolved shear stress range 30<τ<300 MPa. Clearly impurity atoms interact with dislocations in this material. Using the starting value of v we found the two types of 60º dislocations, which are distinguished by the sequence of their partials, to have different velocities. Furtheron the velocity depends not only on τ, but also on the elastic strain of the lattice. In the second part the paper reviews EPR spectroscopy of plastically deformed silicon and collects new results on the activity of dislocations in this material as trapping / recombination centers (decay of photo-EPR, photoluminescence, EBIC microscopy and photoplastic effect). (Read more)
- 380. Physica 117B&118B, 9 (1983) , “Deep Levels in Semiconductors”, G. D. Watkins.The 3d transition element ion impurities in silicon are reviewed for the broad insight they provide in understanding deep levels in semiconductors. As interstitials, their interaction with the host tends to confine the d-levels to the forbidden gap, providing many deep states. The interaction at the substitutional site is best considered as an interaction tends to repel deep a1 and t2 levels from the gap. When the levels are present, they are mostly vacancy-like and the defect is likely to display the large lattice relaxations characteristic of the vacancy. (Read more)
- 381. phys. stat. sol. (b) 115, 443 (1983) , “EPR of Iron-Boron Centres in Silicon”, W. Gehlhoff, K. H. Segsa.The EPR spectra of one type of iron-boron centres detected in low-resistivity B-doped p-silicon after iron doping are investigated in detail. The spectra are characterized by a dominating zerofield splitting and a resolved SHF structure due to the interaction with the boron isotopes and arise from... (Read more)
- 382. phys. stat. sol. (b) 119, K117 (1983) , “Gold-related EPR centres of low symmetry in silicon”, M. Höhne.The most important gold-related centre in silicon works incognito: It produces levels which are well known /1/. The acceptor level EC-0.55 eV and the donor level EV+0.35 eV are caused by different states of the same defect, as was als orecentlr affirmed /2, 3/. This defect is... (Read more)
- 383. phys. stat. sol. (a) 75, 473 (1983) , “Eigenschaften einiger störstellenkomplexe von gold in silizium”, H. LemkeThe properties of some ion pairs between donorsor doubke donors of the 3d-group and the acceptor gold are investigated by DLTS-and TSCa-techniques. The pair (Fe+Au-) is an accepter at Ec - 0.34 eV with rcn = 3 × 10-8... (Read more)
- 384. Phys. Rev. Lett. 51, 130 (1983) , “Electron Spin Resonance on GaAs-AlxGa1-xAs Heterostructures”, D. Stein, K. v. Klitzing, G. WeimannPhotoconductivity measurements on GaAs-AlxGa1-xAs heterostructures with photon energies 0.05 meV<hν<0.14 meV show resonance structures with a half-width of less than 0.002 meV in the magnetic field range 3 T<B<8 T. The resonances are only observed at magnetic... (Read more)
- 385. Phys. Rev. Lett. 51, 423 (1983) , “Creation of Quasistable Lattice Defects by Electronic Excitation in SiO2”, Katsumi Tanimura, Takeshi Tanaka, and Noriaki ItohThe transient volume change of ?-quartz and fused silica induced by irradiation with an electron pulse has been measured above 80 K. It is shown that transient changes of volume and optical absorption due to the E1? centers (oxygen vacancies) decay in parallel and that the... (Read more)
- 386. Phys. Rev. Lett. 51, 427 (1983) , “Observation of Spin-Dependent Thermal Emission from Deep Levels in Semiconductors”, M. C. Chen and D. V. LangThe first observation of spin-dependent thermal emission from a deep gap state in a semiconductor is reported. As a result the silicon dangling-bond defects at the Si/SiO2 interface can be directly correlated with a 0.36-eV-deep hole trap. (Read more)
- 387. Phys. Rev. B 27, 4002 (1983) , “Strain-Modulated ESR Study of Pt- in Silicon”, J. C. M. Henning, E. C. J. Egelmeers.Early electron-spin-resonance (ESR) studies by Woodbury and Ludwig on the Pt acceptor in Si have been refined and extended. The strain dependence of the spectroscopic splitting tensor g? has been measured using the strain-modulated electron-spin-resonance technique. The symmetry of the center proves... (Read more)
- 388. Phys. Lett. A 99, 117 (1983) , “Low-Symmetry EPR Center in Hydrogen-Implanted Silicon”, Yu.V. Gorelkinskii, N.N. NevinnyiA new S = 1/2 EPR spectrum, labeled Si-AA2, arises from a negative-charge-state defect which has a low symmetry(C1). It is produced in crystalline silicon by hydrogen implantation at ≈20°C followed by annealing at ≈580°C and disappears completely at 700°C. The kinetics... (Read more)Si| EPR ion-implantation| 29Si AA2 C1 Hydrogen Si-H Vsi cluster(>3) p-type triclinic vacancy .inp files: Si/AA2/AA2.inp | last update: Takahide Umeda
- 389. J. Phys. C: Solid State Phys. 16, 1501 (1983) , “Electron spin resonance of a di-nitrogen centre in Cape yellow type Ia diamonds”, J. A. van Wyk, J. H. N. LoubserA di-nitrogen centre has been observed in gem quality Cape yellow diamonds while illuminated with ultraviolet light. Analysis of the spectrum shows that the paramagnetic electron is localised on two neighbouring nitrogens along (111) directions, which suggests that it is most likely a derivative of... (Read more)
- 390. J. Phys. C: Solid State Phys. 16, 6197 (1983) , “Self-diffusion in intrinsic germanium and effects of doping on self-diffusion in germanium”, G Vogel, G Hettich and H MehrerSelf-diffusion in intrinsic germanium single crystals has been investigated over the temperature range 822-1163K using 71Ge as radioisotope and a sputtering technique for serial sectioning. The data can be described by a preexponential factor of (2.48±0.6)×10-3 m2... (Read more)
- 391. J. Phys. C: Solid State Phys. 16, L667 (1983) , “Self-interstitials and thermal donor formation in silicon: new measurements and a model for the defects”, R C Newman, A S Oates and F M LivingstonSilicon containing oxygen (1018 cm-3) and carbon (7×1017 cm-3) has been heated at 450 degrees C for times up to 600 h to generate thermal donors. Measurements indicate that for every two oxygen atoms that are precipitated there is generation of one... (Read more)
- 392. J. Non-Cryst. Solids 58, 165-178 (1983) , “Electron paramagnetic resonance of Cu2+ and V4+ ions in borate glasses”, L. D. Bogomolova , V. A. JachkinThe EPR spectra of Cu2+ and V4+ ions have been studied in binary RO---B2O3 glasses (where R = Ba, Sr, Pb and Zn) and in ternary PbO---ZnO---B2O3 glasses. The main results of an EPR study of alkali-borate glasses are briefly reviewed. Three distinct EPR spectra of Cu2+ ions in barium-borate glasses... (Read more)
- 393. J. Electrochem. Soc. 130, 1942 (1983) , “Effects of Back-Side Oxidation of Si Substrates on Sb Diffusion at Front Side”, S. Mizuo and H. HiguchiThe effect of back-side oxidation of Si wafers on the diffusion of Sb in the front of wafers is investigated with back-side selective oxidation (BSO) at 1100ºC in dry O2 ambients. It is found that the diffusion of Sb in the front of the wafers is retarded by BSO only for FZ Si substrates under directly formed Si3N4 films, and that Sb diffusion in CZ Si substrates and under double-layered SiO2-Si3N2\4 films in both FZ and CZ substates is not affected by BSO. The effective range over which BSO affects Sb diffusion is found to increase with oxidation time. The range and extent of oxidation retarted diffusion (ORD) for Sb are shown to agree with those of oxidation enhanced diffusion (OED) for B and P. These results are explained with a proposed model:(i) there is a thermal equilibrium between vacancies and interstitials, and(ii) the Si-SiO2 interface provides sinks and generation centers for point defects in Si, though the Si-Si3N4 interface does not react with point defects. (Read more)
- 394. J. Appl. Phys. 54, 161 (1983) , “Quantitative measurements of recombination enhanced dislocation glide in gallium arsenide”, Koji Maeda, Miwa Sato, Akihisa Kubo, and Shin TakeuchiEffects of 30-keV electron-beam irradiation on dislocation glide were investigated for - and -dislocations in bulk n-GaAs single crystals by cathodoluminescence microscopy using a scanning electron microscope with a bending apparatus in it. At high temperatures above... (Read more)
- 395. J. Appl. Phys. 54, 179-183 (1983) , “The Mechanism of the Enhancement of Divacancy Production by Oxygen During Electron Irradiation of Silicon. II. Computer Modeling”, G. S. Oehrlein, I. Krafcsik, J. L. Lindström, A. E. Jaworowski, and J. W. CorbettNumerical tests of possible models for the oxygen dependence of the divacancy introduction rate in silicon electron irradiated at room temperature were performed on a computer. Only the model in which oxygen traps Si self-interstitials can reproduce all the experimental data. Our modeling results... (Read more)
- 396. J. Appl. Phys. 54, 3860 (1983) , “Effect of Si and SiO2 thermal nitridation on impurity diffusion and oxidation induced stacking fault size in Si”, Shoichi Mizuo, Takahisa Kusaka, Akira Shintani, Mitsuo Nanba, and Hisayuki HiguchiThe effect of thermal nitridation on impurity diffusion and Oxidation induced Stacking Fault size in Si are clarified by selective nitridation. Enhanced B and P diffusion, retarded Sb diffusion, and growth of OSF's are found in Si masked with SiO2 films. Retarded B and P diffusion,... (Read more)
- 397. J. Appl. Phys. 54, 6594 (1983) , “Electron Spin Resonance Study of Oxygen Donors in Silicon Crystals”, M. Suezawa, K. Sumino, M. Iwaizumi.Measurements have been conducted on the electron spin resonance due to various types of oxygen donors (thermal, new, and deformation-induced donors) in Czochralski-grown silicon crystals of n type. g tensors determined for these donors all coincide well with that for phosphorus, the... (Read more)
- 398. IEEE Transactions on Electron Devices ED-30, 321 (1983) , “Positive Feedback Model of Defect Formation in Gradually Degraded GaAlAs Light Emitting Devices”, KAZUO KONDO, OSAMU UEDA, SHOJI ISOZUMI, SHIGENOBU YAMAKOSHI, KENZO AKITA, TSUYOSHI KOTANI
- 399. Appl. Phys. Lett. 42, 448 (1983) , “Observation of oxidation-enhanced and oxidation-retarded diffusion of antimony in silicon”, T. Y. Tan and B. J. GinsbergAn experiment was carried out to study oxidation-enhanced and oxidation-retarded diffusion (OED and ORD) of Sb in (100) and (111) Si wafers oxidized in dry O2 at 1160 °C. The ORD data of (100) wafers agree well with those of Mizuo and Higuchi and with the prediction of a model... (Read more)
- 400. Appl. Phys. Lett. 42, 690 (1983) , “Self-interstitial and vacancy contributions to silicon self-diffusion determined from the diffusion of gold in silicon”, F. Morehead and N. A. Stolwijk, W. Meyberg, and U. GseleWe present an analysis of gold diffusion profiles in silicon taking into account that both self-interstitials and vacancies are present at thermal equilibrium. We find that at 1000 °C the contribution of self-interstitials to silicon self-diffusion is about equal to that of vacancies. Applied... (Read more)
- 401. Appl. Phys. Lett. 42, 961 (1983) , “Kinetics of self-interstitials generated at the Si/SiO2 interface”, K. Taniguchi and D. A. Antoniadis and Y. MatsushitaThe kinetics of self-interstitials in silicon were investigated by monitoring oxidation stacking faults on backside oxidized silicon wafers in the temperature range 11001200 °C in a wet O2 ambient. The diffusion coefficient and thermal equilibrium concentration of... (Read more)
- 402. Appl. Phys. Lett. 43, 1111 (1983) , “29Si hyperfine structure of unpaired spins at the Si/SiO2 interface”, K. L. BrowerThe hyperfine spectrum associated with unpaired electrons at the (111) Si/SiO2 interface (Pb centers) is reported for the first time. Electron paramagnetic resonance measurements indicate that the hyperfine interaction S··I arises from the... (Read more)
- 403. Appl. Phys. Lett. 43, 563-565 (1983) , “Characteristic electronic defects at the Si-SiO2 interface”, N. M. Johnson, D. K. Biegelsen, M. D. Moyer, S. T. Chang, E. H. Poindexter, P. J. CaplanOn unannealed, thermally oxidized silicon, electron spin resonance reveals an oriented interface defect which is termed the Pb center and identified as the trivalent silicon defect. Deep level transient spectroscopy (DLTS) reveals two broad characteristic peaks in the... (Read more)
- 404. Appl. Phys. A 30, 1 (1983) , “Transition Metals in Silicon”, E. R. Weber.A review is given on the diffusion, solubility and electrical activity of 3d transition metals in silicon. Transition elements (especially, Cr, Mn, Fe, Co, Ni, and Cu) diffuse interstitially and stay in the interstitial site in thermal equilibrium at the diffusion temperature. The parameters of the liquidus curves are identical for the Si:Ti — Si:Ni melts, indicating comparable silicon-metal interaction for all these elements. Only Cr, Mn, and Fe could be identified in undisturbed interstitial sites after quenching, the others precipitated or formed complexes. The 3d elements can be divided into two groups according to the respective enthalpy of formation of the solid solution. The distinction can arise from different charge states of these impurities at the diffusion temperature. For the interstitial 3d atoms remaining after quenching, reliable energy levels are established from the literature and compared with recent calculations. (Read more)
- 405. Surf. Sci. 141, 255-284 (1984) , “X AND K BAND ESR STUDY OF THE Pb INTERFACE CENTRES IN THERMALLY OXIDIZED p-TYPE (001)Si WAFERS AT LOW TEMPERATURES AND INFLUENCE OF MEDIUM-DOSE As+ ION IMPLANTATION”, A. Stesmans, J. Braet, J. Witters, R. F. DekeersmaeckerElectron spin resonance (ESR) experiments have been carried out at cryogenic temperatures (4.2 T 35 K) and room temperatures at 9.0 and 20.9 GHz on the Pb0 and Pb1 (commonly referred to as Pb) spin-active defects residing at the Si/SiO2 interface. The ESR lineshapes were shown to display gaussian... (Read more)
- 406. Sov. Phys. Solid State 26, 66 (1984) , “EPR Study of Si-S1-Center Optical Excitation and Relaxation Processes in Irradiated Silicon”, L. S. Vlasenko, I. M. Zaritskii, A. A. Konchits, B. D. Shanina.For the first time transition processes in the excited state of the neutral oxygen-containing vacancy in silicon (Si-S1 center) were studied by EPR over a wide temperature range (2.5-100 K). By comparing the experimental results with theory, it was established that the formation of the excited triplet state occurs with participation of photoexcited current carriers in contrast with a number of similar systems where excitation takes place within the centers. The different spins in the triplet state are due to the selective nature of their decay processes while the formation processes are nonselective. The temperature dependence above 20 K of dynamic system characteristics is determined by the inclusion of an intrinsic spin-relaxation mechanism of triplet states.
- 407. Sov. Phys. Semicond. 18, 1102 (1984) , “Electron Spin Resonance of Defects in Si:Al Irradiated with Large Electron Doses”, A. V. Dvurechenski?, B. P. Kashnikov, V. V. Suprunchik.Silicon containing aluminium in concentrations 6×1017-5×1018 cm-3 and irradiated with 1MeV electrons in doses of 1×1018-2×1020 cm-2 was found to have a new paramagnetic center designated H5. The ESR method was used to analyze the structure of the H5 center, which showed that the center has a spin of 1/2 and a {110} symmetry. The principal components of the g tensor and their orientations relative to the crystallographic axis were determined: g1=2.0063, g2=2.0005, g3=2.0036(±0.0001), θ=13±2°, where θ is the angle between the [110] and g1 directions, where both g1 and g2 lie in a (110) plane and g3||[110]. A hyperfine structure appeared because of the interaction of an unpaired electron with two inequivalent nuclei of the 29Si isotope and with the 27Al nucleus. The constant of the hyperfine interaction with the 27Al nucleus was (4.0±0.7)×10-4 cm-1. The hyperfine initeraction tensor for one of the 29Si nuclei was found to be axially symmetric and its principal values were detemined: A⊥=41.6×10-4 and A||= 62.5×10-4 cm-1. The densities of the wave function of the unpaired electron at each of the 29Si atoms(~24%) of which 15% is in the s state and 85% in the p state) and at 27Al(0.3%) were found. An analysis of the results obtained led to the conclusion that the H5 center consists of a divacancy and an interstitial aluminium atom located in a {110} plane. The unpaired electron is located on an extended orbital of the divacancy (representing about 50% of the wave funcrion densiry.
- 408. Sov. Phys. Semicond. 18, 162 (1984) , “Problem of the charge state of manganese impurities in GaAs:Mn”, D. G. Andrianov, Yu. A. Grigor'ev, S. O. Klimonski?, A. S. Savel'ev, S. M. Yakubenya
- 409. Sov. Phys. Semicond. 18, 49 (1984) , “Influence of rare-earth elements on the carrier mobility in epitaxial InP and InGaAs films”, N. T. Bagraev, L. S. Vlasenko, K. A. Gatsoev, A. T. Gorelenok, A. V. Kamanin, V. V. Mamutin, B. V. Pushny, V. K. Tibilov, Yu. P. Tolparov, A. E. Shubin
- 410. Solid State Commun. 51, 127 (1984) , “Carbon and Oxygen Isotope Effects in the 0.79 eV Defect Photoluminescence Spectrum in Irradiated Silicon ”, K. Thonke, G. D. Watkins$ and R. SauerThe 0.79 eV photoluminescence spectrum known to emerge in oxygen-rich irradiated silicon is studied in 13C and 18O enriched crystals. The peincipal no-phonon transition at 0.79 eV splits onto a doublet in the 13C enriched sample in a way directly demonstrating that one carbon atom per center is optically active. In contrast, no isotope effects are observed in the local mode replicicas. Doping the silicon with 18O slightly influences two local mode replicas giving the first direct evidence that oxygen is involved in the defect. (Read more)
- 411. Solid State Commun. 51, 665 (1984) , “ESR of Selenium Pairs (Se+2) in Silicon”, R. Wrner, O. F. Schirmer.A slight anisotropy of the Se+2 ESR is resolved, revealing [111] axial symmetry. The pair groundstate is a2u in D3d symmetry, consistent with the almost complete s-character at the Se sites. The value of g|| is correlated with the binding energy of... (Read more)
- 412. Solid State Commun. 51, 951 (1984) , “Electron Paramagnetic Resonance of a Nitrogen-Related Centre in Electron Irradiated Silicon”, M. Sprenger, E. G. Sieverts, S. H. Muller and C. A. J. AmmerlaanThe observation by electron paramagnetic resonance of a centre related to nitrogen as an impurity in silicon is reported. While all previously reported nitrogen-related centres in silicon were produced by nitrogen implantation, the present centre is observed after electron irridiation of... (Read more)
- 413. phys. stat. sol. (a) 82, 235 (1984) , “Nature of Thermal Donors in Silicon Crystals”, M. Suezawa, K. SuminoThe formation process of thermal donors in Czochralski-grown silicon crystals at 471.3 ℃ is studied by means of the optical absorption at a low temperature. The development of six kinds of thermal donors, termed TD-1 through TD-6, is followed separately. Experimental results obtained are analyzed... (Read more)
- 414. phys. stat. sol. (a) 82, 533 (1984) , “The Effect of Heat Treatment on Compensated CZ Silicon”, P. I. Baranskii, V. M. Babich, N. P. Baran, A. A. Bugay, Yu. P. Dotsenko, V. B. Kovalchuk.Thermally induced donors in Czochralski-grown p-Si crystals are investigated by both EPR and Hall techniques. The results confirm that thermally induced donors are double donors. A model to account for paramagnetic properties of thermal donors is proposed. (Read more)
- 415. phys. stat. sol. (a) 86, 313 (1984) , “New EPR Defects in Si<Al>”, A. V. Dvurechenskii, B. P. Kashnikov, V. V. Suprunchik.Two new paramagnetic centres, labeled Si-H5 and Si-H6 are found in silicon containing aluminium (6 × 1017 to 5 × 1018 cm-3) and irradiated with high dose of 1 Me V electrons (up to 2 × 1020 cm-2). Spin-Hamiltonian constants of the Si-H5... (Read more)
- 416. Phys. Rev. Lett. 52, 1814 (1984) , “Microscopic Theory of Atomic Diffusion Mechanisms in Silicon ”, Roberto Car*, Paul J. Kelly, Atsushi Oshiyama, and Sokrates T. PantelidesWe report self-consistent Green's-function total-energy calculations which provide, for the first time, a firm theoretical framework for understanding the microscopic mechanisms of atomic diffusion in Si. We find that the self-interstitial has negative-U properties, roughly the same formation energy... (Read more)
- 417. Phys. Rev. Lett. 52, 851 (1984) , “Optical Properties of As-Antisite and EL2 Defects in GaAs”, B. K. Meyer, J.-M. Spaeth, M. SchefflerThis Letter reports the first application of an ESR-tagged magnetic circular dichroism measurement to a paramagnetic deep-level defect in a semiconductor. In semi-insulating GaAs two new absorption bands are found at 1.05 and 1.29 eV. Both bands are identified as intracenter electronic transitions... (Read more)
- 418. Phys. Rev. Lett. 53, 1187 (1984) , “Optically Detected Electron-Nuclear Double Resonance of As-Antisite Defects in GaAs”, D. M. Hofmann, B. K. Meyer, F. Lohse, and J. -M. SpaethThis Letter reports on the first optically detected electron-nuclear double-resonance (ENDOR) measurements of a paramagnetic semiconductor defect in which ligand hyperfine interactions could be resolved. In semi-insulating GaAs: Cr the ENDOR lines of the first-shell 75As neighbors of the... (Read more)
- 419. Phys. Rev. Lett. 53, 1364 (1984) , “Observation of Co-Dimer Formation during Thermal Annealing of Co-Implanted Si ”, G. Langouche, M. de Potter, and D. SchroyenThe formation of Co dimers is observed in a Mössbauer-spectroscopy study of the thermal annealing of Co-implanted Si. The amount of dimers is found to depend strongly on the annealing temperature, on the implantation dose, and on the Si doping. At measuring temperatures between 4 and 300 K... (Read more)
- 420. Phys. Rev. B 29, 2819 (1984) , “Electron Paramagnetic Resonance of Pt- in Silicon: Isolated Substitutional Pt Versus Pt-Pt Pairs”, R. F. Milligan, F. G. Anderson, G. D. Watkins.We report a study of the EPR line shape for Pt- in silicon as a function of the relative abundance of the magnetic (I=1/2) isotope 195Pt. The structure recently noted by Henning and Egelmeers [Phys. Rev. B 27, 4002 (1983)] is insensitive to the 195Pt abundance and... (Read more)
- 421. Phys. Rev. B 30, 2260 (1984) , “Theory of electronically stimulated defect migration in semiconductors ”, Sokrates T. Pantelides, Atsushi Oshiyama*, Roberto Car, and Paul J. KellyWe develop a theory for carrier-capture-enhanced, recombination-enhanced, and athermal defect migration in semiconductors. Contrary to assumptions made recently in describing such processes in Si, we find that knowledge of energy levels or even total energies at only the initial equilibrium and... (Read more)
- 422. Phys. Rev. B 30, 4564 (1984) , “Electron Paramagnetic Resonance on Iron-Acceptor Pairs in Silicon”, J. J. van Kooten, G. A. Weller, and C. A. J. AmmerlaanExperimental data obtained by electron paramagnetic resonance on silicon doped with aluminum and iron are presented. After quenching the sample and a short stay at room temperature, two spectra, labeled Si-NL27 and Si-NL28, were observed. It is concluded that the spectra originate from two Fe-A1... (Read more)
- 423. Phys. Rev. B 30, 6292 (1984) , “Electron Nuclear Double Resonance of Interstitial Iron in Silicon”, S. Greulich-Weber, J. R. Niklas, E. R. Weber, J. -M. Staeth.We report on the first electron nuclear double-resonance investigation of an interstitial deep-level defect in silicon. For interstitial iron the superhyperfine interactions with six shells of neighbor nuclei comprising 42 silicon atoms could be resolved and determined. The localization of the two... (Read more)
- 424. Phys. Rev. B 30, 931 (1984) , “Optical-pumping study of spin-dependent recombination in GaAs”, Daniel PagetOptical-pumping techniques provide a convenient way to study-dependent recombination (SDR) processes at deep impurity centers in semiconductors. Indeed, by changing the polarization of excitation light, it is possible to modify the photoelectron spin polarization in a controlled way. This produces a... (Read more)
- 425. Nucl. Instrum. Methods Phys. Res. B 1, 427-430 (1984) , “Fast neutron damage in tetrahedral ANB8−N Compounds: Effects of ionicity”, A. Goltzene, B. Meyer , C. SchwabIrradiation of crystals with neutrons of high energy leads to the formation of different types of defects, such as point defects or extended defects, like clusters or even amorphous regions in the displacement spike. Their nature and their creation yields depend on the chemical nature of the... (Read more)
- 426. Jpn. J. Appl. Phys. 23, 1594 (1984) , “DX Deep Centers in AlxGa1-xAs Grown by Liquid-Phase Epitaxy”, Masami Tachikawa, Masashi Mizuta, Hiroshi KukimotoDeep levels, the so-called DX centers, in the AlxGa1-xAs alloy system grown by liquid-phase epitaxy (LPE) were investigated by junction-capacitance spectroscopy. The dependence of the activation energy of the DX center in Sn-doped... (Read more)
- 427. J. Phys. Chem. 88, 5255-5260 (1984) , “Dynamic Interchange among Three States of Phosphorus (4+) in ?-Quartz. 2.”, Y. Uchida, J. Isoya, J. A. WeilThe dynamic process due to electron jumping among three states with different sp hybrid directions in the quasitetrahedral P4+ center [PO4]0 in a-quartz has been investigated by 10-GHz electron paramagnetic resonance, over the temperature range 40 to 400 K. The relative populations (mole fractions ƒІ and ƒІІ) of the ground state P(І) and two degenerate thermally excited states P(ІІ) were determined from the measured EPR absorption line intensity ratios and from the line positions of the averaged state P(A), respectively, in the slow and fast kinetic regions. The temperature dependence of the mole fractions has been explained by considering vibrational sublevels in the potential well describing each state. The jump rate was also obtained, via EPR absorption line-width analysis based on the Bloch equations, in both the slow and the fast regions. The characteristic parameters of the dynamic process, Le., energy separation and vibrational sublevels of the ground and excited states, and barrier height between these, have been determined. (Read more)
- 428. J. Phys. C: Solid State Phys. 17, 2943 (1984) , “ODMR of recombination centres in crystalline quartz”, W Hayes, M J Kane, O Salminen, R L Wood and S P DohertyThe well known 2.8 eV luminescence band in quartz has been studied using optically detected magnetic resonance (ODMR). A triplet state with a very large fine-structure splitting is found to contribute to the emission. The principle axes of the triplet are identified. The possibility that the... (Read more)
- 429. J. Phys. C: Solid State Phys. 17, L233 (1984) , “Persistent spectral hole burning of colour centres in diamond”, R. T. Harley, M. J. Henderson, R. M. MacfarlaneFour zero-phonon lines of defect centres in diamond (GR1 (741 nm), N-V (637 nm), H4 (496 nm) and N3 (415 nm)) have been shown to exhibit persistent spectral hole burning. The phenomenon appears to be a rather general one in diamond and should prove very powerful for elucidation of the nature of... (Read more)
- 430. J. Phys. C: Solid State Phys. 17, L911 (1984) , “ENDOR Investigation of Se+ in Silicon”, S. Greulich-Weber, J. R. Niklas, J. -M. Spaeth.Se+ donors in silicon from deep level impurities. They were investigated with electron nuclear double resonance (ENDOR). The superhyperfine (SHF) interactions with eight shells of 29Si neighbour nuclei were analysed and it was confirmed that the electron spin is... (Read more)
- 431. J. Non-Cryst. Solids 66, 133-138 (1984) , “Local order and defects in MBE-grown a-GaAs”, S. G. Greenbaum, D. J. Treacy, B. V. Shanabrook, J. Comas and S. G. BishopElectron spin resonance (ESR), and 71Ga and 75As nuclear magnetic resonance (NMR) measurements have been performed on a 20μ thick film of a-GaAs deposited on a SiO2 substrate by molecular beam epitaxy. The ESR spectrum exhibits the four-line S=1/2, I=3/2 hyperfine pattern characteristic of the... (Read more)
- 432. J. Appl. Phys. 55, 3495-3499 (1984) , “Hole traps and trivalent silicon centers in metal/oxide/silicon devices”, P. M. Lenahan and P. V. DressendorferWe report electron spin resonance (ESR) measurements of E-center (a ``trivalent silicon'' center in SiO2) density as well as capacitance versus voltage (C-V) measurements on -irradiated metal/oxide/silicon (MOS) structures. We also report a considerable refinement of... (Read more)
- 433. J. Appl. Phys. 55, 825 (1984) , “Early stages of oxygen segregation and precipitation in silicon”, A. Bourret, J. Thibault-Desseaux, and D. N. SeidmanThe early stages of oxygen segregation at dislocation and precipitation in the bulk have been investigated by high-resolution electron microscopy in Czochralski grown silicon. Two kinds of precipitates are observed: a crystalline silica phase, coesite, and an amorphous phase. Both forms coexist... (Read more)
- 434. J. Appl. Phys. 55, 852 (1984) , “Stress relaxation in unirradiated and in helium ion bombarded glass plates: Dimensional stability”, William PrimakThe deformation of thin glass plates during bombardment with 140-keV He + ions was measured with an external capacitor. The contour of the plates was determined interferometrically before irradiation, after irradiation, and after aging for several years. These results showed that the... (Read more)
- 435. J. Appl. Phys. 56, 1670 (1984) , “Oxygen-related thermal donors in silicon: A new structural and kinetic model”, A. Ourmazd and W. Schrter and A. BourretA structural model for the oxygen-related thermal donors produced at moderate temperatures (<500 °C) is presented, where electrical activity commences with clusters containing five or more oxygen atoms and arises from a silicon atom at the center of the cluster. The donor activity of a... (Read more)
- 436. J. Appl. Phys. 56, 2655 (1984) , “Kinetics of formation of the midgap donor EL2 in neutron irradiated GaAs materials”, G. M. Martin, E. Estève, P. Langlade, and S. Makram-EbeidFast neutron irradiation of n-GaAs mainly induces two deep electron traps in the band gap. The first of these is referred to as EL6 and has an energy level at Ec 0.35 eV, where Ec is the conduction band minimum; the second one has a wide... (Read more)
- 437. J. Appl. Phys. 56, 2844-2849 (1984) , “Electronic traps and Pb centers at the Si/SiO2 interface: Band-gap energy distribution”, E. H. Poindexter, G. J. Gerardi, M. -E. Rueckel, P. J. Caplan, N. M. Johnson, D. K. BiegelsenEnergy distribution of Pb centers (·SiSi3) and electronic traps (Dit) at the Si/SiO2 interface in metal-oxide-silicon (MOS) structures was examined by electric-field-controlled electron paramagnetic resonance (EPR)... (Read more)
- 438. J. Appl. Phys. 56, 3394 (1984) , “Electron paramagnetic resonance spectroscopy of fast neutron-generated defects in GaAs”, A. Goltzene, B. Meyer, C. Schwab, S. G. Greenbaum, R. J. Wagner, T. A. KennedyA series of fast neutron-irradiated GaAs samples (neutron fluence range of 2×10152.5×1017 cm2) has been investigated by electron paramagnetic resonance (EPR) spectroscopy. The EPR spectra at 9 GHz exhibit a broad (~1 kG) Lorentzian singlet at... (Read more)
- 439. Appl. Phys. Lett. 44, 228-230 (1984) , “Optically induced electron spin resonance and spin-dependent recombination in Si/SiO2”, B. HendersonIn state-of-the-art Si/SiO2 wafers the concentration of paramagnetic interface states (1010 cm2) is almost too low to be detected by electron spin resonance (ESR). This letter describes experiments which show that the ESR signal of singly occupied dangling bond... (Read more)
- 440. Appl. Phys. Lett. 44, 514 (1984) , “Infrared spectrum of interstitial oxygen in silicon”, Michael StavolaA stress-induced dichroism study of the 1106-cm1 and 515-cm1 modes of interstitial oxygen in silicon has been undertaken in order to assign the 515-cm1 mode. It has been found that the 515-cm1 mode is due to the symmetric stretching... (Read more)
- 441. Appl. Phys. Lett. 44, 907 (1984) , “Identification of AsGa antisite defects in liquid encapsulated Czochralski GaAs”, K. Elliott, R. T. Chen, S. G. Greenbaum, R. J. WagnerWe have identified the electron paramagnetic resonance (EPR) spectrum of the As on a Ga site (AsGa) defect in bulk undoped liquid encapsulated Czochralski grown GaAs. The intensity of the EPR signal can be correlated with the concentration of compensating carbon acceptors in the GaAs... (Read more)
- 442. Appl. Phys. Lett. 44, 96-98 (1984) , “Paramagnetic trivalent silicon centers in gamma irradiated metal-oxide-silicon structures”, P. M. Lenahan and P. V. DressendorferWe find that two paramagnetic ``trivalent silicon'' centers appear to be primarily responsible for radiation damage in metal-oxide-silicon structures. Applied Physics Letters is copyrighted by The American Institute of Physics. ... (Read more)
- 443. Sov. Phys. Solid State 27, 1093 (1985) , “Electron Spin Resonance of Strain Probes in Gadolinium-Doped Silicon”, A. A. Buga?, V. E. Kustov, Yu. G. Semenov, V. I. Shakhovtsov, V. L. Shindich.The angular dependences of the ESR line width were studied for interstitial Fe0 and Mn0 in gadolinium-doped silicon. It was found that the addition of gadolinium causes considerable internal elastic deformations of the crystal. A theoretical calculation is given whereby the mean deformation charge density can be determined from the measured ESR line widths of strain--sensitive centers.
- 444. Sov. Phys. Semicond. 19, 1198 (1985) , “Nonorientable Divacancies in Neutron-Irradiated Silicon”, A. V. Dvurechenski?, A. A. Karanovich.The electron spin resonance method was used in na investigation of heavily doped n-type silicon [phosphorus concentration NP = (2-10)×1018 cm-3] irradiated with reactor neutrons in doses 5×1017-4×1019 cm-2. In addition to the spectra of the familiar G7 (divacancy) and P3 (tetravacancy) centers, the investigated samples exhibited two new spectra denoted by H9 and H10. The parameters of the spin Hamiltonian of these spectra were determined. According to the results obtained, the H9 spectrum was due to nonorientable divacancies located in zones of strong lattice deformation zones was ε ≥ 10-3. It was postulated that H10 is a vacancy-type defect with a paramagnetic electron localized on a broken bond of a silicon atom. Some of the characteristics of the P3 and P6 spectra observed for heavily doped n-type silicon indicated that the manifestation of these centers depends on the Fermi level position.
- 445. Solid State Commun. 53, 1135 (1985) , “Electron Paramagnetic Resonance on Shallow Acceptor Impurities in Silicon”, R. van Kemp, C. A. J. Ammerlaan.The shallow acceptor impurities boron, aluminum, gallium and indium in silicon were investigated by electron paramagnetic resonance (EPR) using a K-band superheterodyne spectrometer. The EPR spectra of these impurities were observed at low temperatures (1.4K < T < 4.2K) under conditions of zero and small values of external uniaxial stress. the observed angular dependence of the resonance lines can be analyzed using the effective spin Hamiltonian H = HB + Hε with J = 3/2 [1], HB = ?, Hε = ?. By making a least squares fit to the experimental data, the g-values g1' and g2' and the deformation potential parameters b' and d' were obtained. Under a variety of conditions peculiar line shapes and width were observed. We considered teh following mechanism to explain the observed characteristics of the resonance lines: double and triple quantum transitions, linear and quadratic effects of strain, dynamic Jahn-Teller distortion, transition probabilities and the effect of relaxation time on spin dynamics. Double and triple quantum transitions can occur in this system because j = 3/2. They can be recognized because their intensity is proportional to the square and the cube, respectively, of the microwave power. However, in the experiment no such dependence on the microwave power was found. The expressions thus obtained can account qualitatively for the line width and asymmetry when it is assumed that the strain distribution in the crystal is approximately Gaussian. These effects can not account for a peculiar narrow dip that is present in the centers of the resonance lines with ΔMj = 1 and ΔMj = 2 [2]. A dynamic Jahn-Teller distortion of the acceptor atoms would have result that there are no sites with strain zero. Together with the random strains present in the crystal, the effect will be a shift of intensity away from the magnetic field at which the center of the line occurs. Calculation of the transition probabilities for the ΔMj = 1, 2, 3 transitions showed that these do not become very small in any of the cases. An explanation of the dip in the center of the resonance line can be offered in the following way [3]. The broad resonance lines for the ΔMj = 1 and ΔMj = 2 transitions are a superposition of spin packets which are shifted due to the random internal strains. For small values of the strains, packets will overlap, allowing a form of cross-relaxation to occur. this results in broadening of the homofeneous width and smaller intensity at the centerof the resonance line. (Read more)
- 446. Rev. Sci. Instrum. 56, 2050 (1985) , “Application of a microwave preamplifier to an ESR spectrometer”, Günter GramppThe aim of this investigation was to measure the sensitivity improvement reached on a commercial homodyne X-band ESR spectrometer by installing a microwave GaAsFET type preamplifier (8.59.6 GHz). Up to a power level of 1 mW a factor of 3 was obtained in signal improvement.... (Read more)
- 447. Prog. Surf. Sci. 20, 9-103 (1985) , “Chemisorption and charge transfer at ionic semiconductor surfaces: Implications in designing gas sensors”, W. GopelA detailed atomistic understanding of charge transfer reactions between semiconductor surfaces and adsorbing particles is essential for designing gas sensors or metal-oxide catalysts.This will be demonstrated in a discussion of thermodynamically or kinetically controlled solid/gas interactions at... (Read more)
- 448. phys. stat. sol. (b) 130, K51 (1985) , “New EPR Spectrum in Helium-Implanted Silicon”, Yu. V. Gorelkinskii, N. N. Nevinnyi, A. A. Kim.Recently /1 to 4/ a unique class of electron-vibronic photoluminescence spectra in silicon has been found. These spectra have been observed exclusively after noble gas (in particular, helium) ion implantation and partial annealing, above 200 ℃. Tkachev et al. /1, 3/ have suggested that noble gas... (Read more)
- 449. phys. stat. sol. (a) 92, K53 (1985) , “Low Symmetry Centre in Silicon”, A. V. Dvurechenskii, V. V. Suprunchik.Investigation of the defect formation in heavily doped silicon irradiated by high dose of electrons have led to the discovery of new types of defects /1, 2/. The present note is the next one of this series. A new centre is investigated in p-type silicon irradiated by neutrons. (Read more)Si| EPR neutron-irradiation| A5 C1 H8 P3 P6 Sii Vsi interstitial p-type triclinic vacancy .inp files: Si/H8/H8.inp | last update: Takahide Umeda
- 450. Phys. Rev. Lett. 55, 2204 (1985) , “Identification of the 0.82-eV Electron Trap, EL2 in GaAs, as an Isolated Antisite Arsenic Defect”, M. Kami?ska, M. Skowro?ski, W. KuszkoEL2 is a technologically important deep level in GaAs whose identification has been the subject of intense study. In this paper we present uniaxial stress and magnetic field experiments which establish for the first time that EL2 has tetrahedral symmetry and is, therefore, an isolated point defect.... (Read more)
- 451. Phys. Rev. Lett. 55, 2340 (1985) , “Bistability and Metastability of the Gallium Vacancy in GaAs: The Actuator of EL2?”, G. A. Baraff and M. SchluterWe have used the Green's-function technique to carry out electronic-structure and total-energy calculations for the gallium vacancy in GaAs and for the nearest-neighbor (arsenic vacancy)-(arsenic antisite) pair which results when an adjacent arsenic atom hops over and fills the gallium vacancy. The... (Read more)
- 452. Phys. Rev. B 31, 5525-5528 (1985) , “Mechanism for hydrogen compensation of shallow-acceptor impurities in single-crystal silicon”, N. M. JohnsonExperimental results are presented which identify the following chemical reaction as being responsible for compensation of shallow-acceptor impurities when single-crystal silicon is exposed to monatomic hydrogen: A-+h++H0↔(AH)0, where A-... (Read more)
- 453. Phys. Rev. B 31, 5561 (1985) , “Donorlike excited states of the thermally induced 0.767-eV (P line) defect in oxygen-rich silicon ”, J. Wagner and A. Drnen and R. SauerPhotoluminescence-excitation spectroscopy with a KCl: Tl color-center laser is performed on the thermally induced defect in oxygen-rich silicon which emits the 0.767-eV (P) no-phonon line. We find two sets of excited states. One set 20-30 meV above the P transition is identified with... (Read more)
- 454. Phys. Rev. B 32, 530 (1985) , “Muonium centers in GaAs and GaP ”, R. F. Kiefl, J. W. Schneider, H. Keller, W. Kndig, W. Odermatt, and B. D. Patterson, and K. W. Blazey and T. L. Estle and S. L. RudazThe authors present the first observation of muon spin rotation for normal (Mu) and anomalous (Mu*) muonium centers in compound semiconductors, specifically GaP and GaAs. As in the elemental semiconductors, the muonium defect centers are characterized by a large isotropic hyperfine... (Read more)
- 455. Phys. Rev. B 32, 6571 (1985) , “Electrical Properties of Dislocations and Point Defects in Plastically Deformed Silicon”, P. Omling, E. R. Weber, L. Montelius, H. Alexander, J. Michel.Energy levels of defect states introduced by plastic deformation of n-type silicon have been studied by capacitance transient spectroscopy. From the observed properties of the defects, it is concluded that two different types of defects are produced. The first type is interpreted as point defects... (Read more)
- 456. Phys. Rev. B 32, 6965 (1985) , “Reduced g factor subband Landau levels in AlGaAs/GaAs heterosructures”, G. Lommer, F. Malcher, and U. RösslerThe reduction of the g factor of subband Landau levels in the n-inversion channel of AlGaAs/GaAs heterostructures, which has been observed in electron-spin-resonance experiments by Stein, von Klitzing, and Weimann [Phys. Rev. Lett. 51, 130 (1983)], can be explained quantitatively by the taking into... (Read more)
- 457. Phys. Rev. B 32, 7129 (1985) , “Electron-Nuclear Double Resonance of Titanium in Silicon: 29Si ENDOR”, D. A. van Wezep, R. van Kemp, E. G. Sieverts, C. A. J. Ammerlaan.The Si-NL29 EPR spectrum, which is associated with the positive charge state of interstitial titanium in silicon, was investigated by electron-nuclear double resonance. Hyperfine-interaction parameters of 17 shells of silicon neighbors, comprised of 214 atoms, could be determined. These parameters... (Read more)
- 458. Phys. Lett. A 110, 157 (1985) , “EPR of Neutral Vacancy-Helium Centers in Silicon”, Yu. V. Gorelkinskii, N. N. Nevinnyi and S. S. AjazbaevIn this letter we report the first observation by EPR of helium-associated defects in solid. Two new (S = 1) EPR spectra, labeled Si-AA5 and Si-AA6, arise from the association of helium and intrinsic defects in crystalline silicon. Both are produced by helium ion implantation at room temperature and... (Read more)
- 459. Microscopic identification of electronic defects in semiconductors 453 (1985) , Materials Research Socirty Symposia Proceedings,Noble M. Johnson, Stephen G. Bishop, George D. Watkins , “Excitation spectroscopy on silicon using color center lasers : study of the thermally induced p line (0.767eV) defect”, J Wagner,A Dornen,R Sauer
- 460. Mater. Res. Soc. Symp. Proc. 46, 227 (1985) , “Defect Identification in Silicon Using Electron Nuclear Double Redonance”, C. A. J. Ammerlaan, M. Sprenger, R. van Kemp, D. A. van Wezep.The application of electron nuclear double resonance (ENDOR) for identification and characterization of point defects in silicon is reviewed. Taking the vacancy and the boron-vacancy complex as examples it is discussed how ENDOR can provide information on the atomic and electronic structure of paramagnetic centers.
- 461. Mater. Res. Soc. Symp. Proc. 46, 237 (1985) , “ENDOR-Investigation of Al++ and Al++-Al- Pairs in Silicon”, J. R. Niklas, J. M. Spaeth, G. D. Watkins.With Electron Nuclear Double Resonance (ENDOR) ligand superhyperfine (shf) interactions were investigated for 7 neighbor shells of the interstitial Al++ center (Si-G18) and for 10 neighbor shells of the Al++-Al- pair center (Si-G19). All shells of the interstitial center exhibit undistorted Td symmetry confirming the defect model derived from earlier experiments. In the pair center the shf interaction of the Al++ with the neighboring Al nucleus shows a pure [111]-symmetry, also the shf interactions with the outer Si-neighbor shells exactly reflect this axial [111]-symmetry of the defect. The magnitude of the quadrupole interaction of the neighboring Al nucleus clearly shows, that this nucleus is a nearest neighbor of the Al++. From the angular dependence and the intensity ratios of ENDOR lines of the pair center it can be excluded that any additional impurity is associated with the Al++-Al- pair at least within the first 3 neighbor shells of the Al++. The influence of the Al- neighbor on the hyperfine axes of the first [111] Si-neighbors is negligible and is also remarkably small for the other Si-neighbors. The magnitudes of the ligand shf interactions gor the pair center are closely related to those of the Al++ center. A comparison of these values for both centers allows a definite assignment of the measured shf interactions to their corresponding neighbor shells for the Al++ center.
- 462. Mater. Res. Soc. Symp. Proc. 46, 263 (1985) , “Identity of the NL8 EPR Spectrum with Thermal Donors in Silicon”, K. M. Lee, J. M. Trombetta, G. D. Watkins.The effect of uniaxial stress on the NL8 EPR spectrum in 450℃ heat-treated silicon containing thermal donors (TD's) is described. Changes in the relative amplitudes of the NL8 spectral components are interpreted as arising from electronic redistribution between the differently oriented defects. These changes are consistant in sign and magnitude with those predicted for TD+ from observed stress effects on the TD IR and DLTS spectra.
- 463. Mater. Res. Soc. Symp. Proc. 46, 39 (1985) , “Electronic Defect Characterization”, H. G. Grimmeiss.Knowledge concerning the electronic properties of defects is crucial for the understanding of the behaviour of these defects in semiconductors. Considering the important role defects play in most currently used devices it is not surprising that a great number of different measurement techniques have been developed with the aim of not only quantitatively determining the electronic parameters but also of identifying the defect chemically and evaluating the local environment of such defects. In most cases this goal can not be achieved by applying only a single (defect property) measureing technique. In this paper an attempt is made, using two different examples. to show what achivements in defect characterization and identification can be obtained by combining two or more different measurement techniques. The first example is a single substitutional impurity, sulfur in silicon, while the second example deals with a more complex defect, the oxygen-vacancy center in silicon. In both cases a number of techniques such as different junction space charge measurements, Hall effect, absorption, ESR, photo-ESR, ENDOR photoconductivity, irradiaton and annealing processes, and even theory were used to study the defect. The advantages and limitations of various methodologies will be discussed.
- 464. Mater. Res. Soc. Symp. Proc. 46, 525 (1985) , “Electronic Ground State of Iron-Acceptor Pairs in Silicon”, C. A. J. Ammerlaan, J. J. van Kooten.Iron-acceptor impurity pairs, consisting of a positively charged iron ion trapped on an interstitial site in the vicinity of an ionized acceptor, in silicon were observed by electron paramagneric resonance for all common acceptor dopants (B, Al, Ga, In). The Zeeman splittings of these pairs, to which both spin and orbital momenta contribute, cover the range between 1.1 and 6.4. An interpretation of these spectroscopic spliting factors is presented, shich considers the effects of the crystal field - of cubic, axial, or lower symmetry - and of spin-orbit interaction on the 4F ground state of the iron ion in a (3d)7 configuration. It is not due to a dynamical Jahn-Teller effect. nor due to hybridization. Rather, it is proposed that a significant reduction, by about 80%, of the orbital magnetism arises from covalency.
- 465. Jpn. J. Appl. Phys. 24, 279 (1985) , “Solubility and Diffusion Coefficient of Oxygen in Silicon ”, Yoshiko Itoh and Tadashi NozakiThe solubility and diffusion coefficient of oxygen in silicon between 1000°C and 1375°C were examined by charged particle activation analysis with the 16O(3He, p)18F reaction, in which oxygen was activated with an equal probability over the depth of up to 250... (Read more)
- 466. Jpn. J. Appl. Phys. 24, L143 (1985) , “Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System”, Masashi Mizuta, Masami Tachikawa, Hiroshi Kukimoto, Shigeru MinomuraAn experimental result that the DX center appears in GaAs:Si and GaAsd:Sn under hydrostatic pressure of about 30 kbars has been obtained for the first time. This indicates clearly that the DX center in the AlGaAs alloy system is due to a substitutional donor itself (not a complex referred to as... (Read more)
- 467. JETP Lett. 42, 38 (1985) , “Nonresonant Spin-Dependent Conductivity in Silicon”, L. S. Vlasenko, V. A. Khramtsov.A nonresonant change has been discovered in the photoconductivity of irradiated silicon crystals in a weak magnetic field. This new effect is shown to result from a spin-dependent recombination of photoexcited carriers through triplet centers. A change in the photoconductivity in the absence of a resonant alternating magnetic field arises at anticrossing points of magnetic sublevels of triplet centers. (Read more)
- 468. J. Phys. C: Solid State Phys. 18, 2623 (1985) , “Magnetic resonance spectroscopy in semiconducting diamond”, C. A. J. Ammerlaan, R. van KempIn type-IIb semiconducting diamond an electron paramagnetic resonance spectrum, which is labelled C-NL1, is observed. For detection of the resonance low sample temperatures (T<4K) and the application of a large uniaxial stress (P approximately=1 GPa) are required. The spectrum can be analysed... (Read more)
- 469. J. Phys. C: Solid State Phys. 18, L967 (1985) , “Thermal donors in silicon: oxygen clusters or self-interstitial aggregates”, R C NewmanThere is a long-standing view that small aggregates of oxygen impurities in silicon produced by heat treatments at 450 degrees C are the defects that act as thermal donors. Recently it has been established that these treatments also lead to the generation of self-interstitials. It is now suggested... (Read more)
- 470. J. Electrochem. Soc. 132, 1707 (1985) , “Determination of Conversion Factor for Infrared Measurement of Oxygen in Silicon”, T. Iizuka, S. Takasu, M. Tajima, T. Arai, T. Nozaki, N. Inoue, and M. WatanabeA reliable conversion factor for the infrared absorptiometry of oxygen in silicon has been determined by round-robininfrared measurement followed by charged particle activation analysis with the 16O(3He,p)18F reaction. As for theround-robin samples, 70 dislocation-free CZ silicon wafers with oxygen contents ranging from 3 to 20 × 1017 at.-cm-3 andthicknesses of 2, 1, and 0.5 mm were carefully prepared by five organizations. A good linear relationship has been obtainedbetween the absorption coefficient and the oxygen content. The relationship is expressed as [oxygen concentration (at.-cm-3)] = (3.03 ± 0.02) × 1017 × [absorption coefficient (cm-1)]. (Read more)
- 471. J. Electrochem. Soc. 132, 3034 (1985) , “Quantitative Spectroscopy of Interstitial Oxygen in Silicon”, B. Pajot and H. J. Stein and B. Cales and C. NaudQuantitative data are presented on the infrared (IR) absorption of interstitial oxygen in oxygen-rich silicon using Fourier transform spectroscopy. Besides the wel-known and 1106 cm-1 room temperature IR bands, due to the symmetric and antisymmetric vibrations of the Si2O entity, respectively, three other bands at 1227, 1720, and 1013 cm-1 are reported, whose intensities are scaled with those of the 515 and 1106 cm-1 bands. The band at 1227 cm-1 has often been confused with an oxygen precipitate band observed at 1225 cm-1 in annealed silicon. Evidence is given that the 1227 cm-1 band is related to interstitial oxygen. It is also shown that another band at 1720 cm-1 is a combination of the antisymmetric mode of Si2O with a phonon combination of the silicon lattice. A weak band at 1013 cm-1 is reported for the first time, and it is attributed to an overtone of the 515 cm-1 mode. (Read more)
- 472. J. Appl. Phys. 24, L689 (1985) , “Photo-Electron Paramagnetic Resonance Study of AsGa Antisite Defect in As-Grown GaAs Crystals of Different Stoichiometry”, Noriaki Tsukada, Toshio Kikuta, Koichi IshidaThe photoresponses of the antisite defect AsGa+ electron paramagnetic resonance signal have been investigated in as-grown, undoped, semi-insulating GaAs crystals grown from melts of different As atoms fractions. The observed photoresponses are well explained by assumting... (Read more)
- 473. J. Appl. Phys. 57, 1523 (1985) , “Defect structures in rapidly degraded InGaAsP/InGaP double-heterostructure lasers”, Osamu Ueda, Kiyohide Wakao, Akio Yamaguchi, Shoji Isozumi, and Satoshi KomiyaRapidly degraded InGaAsP/InGaP double-heterostructure lasers grown on (001)-oriented GaAs substrates by liquid phase epitaxy have been investigated by photoluminescence topography and transmission electron microscopy. 100" align="middle">-dark-line defects and 110" align="middle">-dark-line defects... (Read more)
- 474. J. Appl. Phys. 57, 1783 (1985) , “Annealing kinetics of the gold-iron complex in silicon”, S. D. Brotherton, P. Bradley, and A. GillGold and iron are known to interact in silicon at temperatures below ~400 °C to form gold-iron pairs with band-gap energy levels of Ev +0.434 eV and Ec 0.354 eV. In this work, the details of the formation and dissociation of these pairs... (Read more)
- 475. J. Appl. Phys. 57, 5176 (1985) , “Damage center formation in SiO2 thin films by fast electron irradiation”, R. L. PfefferThe concentrations of E centers (ESR-active oxygen vacancies) produced by 30160 keV electron irradiation have been measured in thermal SiO2 films at doses far exceeding any previously reported. The dependences of these concentrations on electron energy and fluence were... (Read more)
- 476. J. Appl. Phys. 58, 2448 (1985) , “Thermal strain-induced degradation mechanism in the visible AlGaAs/GaAs laser”, M. Ikeda, O. Ueda, S. Komiya, and I. UmebuWe fabricated and life-tested visible AlGaAs/GaAs channeled-substrate-planar-type lasers and found that some are degraded within 100 h of operation. We investigated these using photoluminescence and transmission electron microscopic images. The characteristic features in photoluminescence images are... (Read more)
- 477. J. Appl. Phys. 58, 3996 (1985) , “Catastrophic degradation of InGaAsP/InGaP double-heterostructure lasers grown on (001) GaAs substrates by liquid-phase epitaxy”, Osamu Ueda, Kiyohide Wakao, Satoshi Komiya, Akio Yamaguchi, Shoji Isozumi, and Itsuo UmebuCatastrophically degraded InGaAsP/InGaP double-heterostructure lasers grown on (001) GaAs substrates by liquid-phase epitaxy, emitting at 727 and 810 nm are investigated by photoluminescence topography, scanning electron microscopy, transmission electron microscopy, and energy dispersive x-ray... (Read more)
- 478. Defects and defect processes in nonmetallic solids 1-464 (1985) , John.Wiley and sons , W. Hayes, A.M. Stoneham. WileyCHAPTER1. Electronic Properties CHAPTER2. Interatomic Forces and Atomic Motions CHAPTER3. Lattice Defects CHAPTER4. Spectroscopy of Solids CHAPTER5. Electronic Properties of Point Defects CHAPTER6. Radiation-Induced defect processes CHAPTER7. Properties of Surfaces CHAPTER8. Special Systems APPENDIX: Notation for Defects PHYSICAL CONSTANTS; Units and Conversion Factors SUPPLEMENTARY READING REFERENCES INDEX
- 479. Appl. Phys. Lett. 46, 781 (1985) , “Photoresponse of the AsGa antisite defect in as-grown GaAs”, M. Baeumler, U. Kaufmann, and J. WindscheifThe photoresponse of the As + Ga" align="middle"> antisite electron-paramagnetic-resonance (EPR) has been studied in as-grown semi-insulating GaAs as a function of illumination time and photon energy h. The As + Ga" align="middle"> EPR signal intensity... (Read more)
- 480. Appl. Phys. Lett. 46, 787 (1985) , “Absence of oxygen diffusion during hydrogen passivation of shallow-acceptor impurities in single-crystal silicon”, N. M. Johnson and M. D. MoyerIt was recently proposed that hydrogen compensation of shallow-acceptor impurities in single-crystal silicon is due to the diffusion of both monatomic oxygen and hydrogen into silicon which combine at acceptor sites to form neutral acceptor-OH complexes. It is shown here that oxygen does not diffuse... (Read more)
- 481. Appl. Phys. Lett. 46, 882 (1985) , “Atomic deuterium passivation of boron acceptor levels in silicon crystals”, J. C. Mikkelsen, Jr.B-doped Si wafers were subjected to atomic-deuterium (D) plasmas to simulate the reactions of atomic hydrogen with substitutional B acceptor levels. Secondary ion mass spectrometry was used to profile the in- and out-diffusion of D, and spreading resistance was used to measure the distribution of... (Read more)
- 482. Appl. Phys. Lett. 47, 970 (1985) , “Identification of EL2 in GaAs”, H. J. von Bardeleben, D. Stievenard, J. C. Bourgoin, A. HuberCombining electron paramagnetic resonance under optical excitation, deep level transient spectroscopy, electron irradiation, annealing, and quenching on LEC semi-insulating GaAs and lightly Si-doped material grown in the same way as the semi-insulating material, we have shown that (i) the irradiated... (Read more)
- 483. Superlatt. Microstruct. 2, 273-278 (1986) , “Electron states in GaAs/Ga1−xAlxAs heterostructures: Subband Landau-levels*1”, G. Lommer, F. Malcher and U. RsslerNonparabolicities (3,4) of the bulk band structure are taken into account in the calculation of subband Landau-levels in the n-inversion layer of GaAs/Ga1−xAlxAs heterostructures. We calculate the deviation of the cyclotron mass from the isotropic parabolic band case (2) for magnetic fields... (Read more)
- 484. Sov. Phys. Solid State 28, 1862 (1986) , “Electron States Having Spin S ≥ 1 at Dislocations in Silicon”, M. N. Zolotukhin.The kinetics of restoration of the ESR spectrum fine structure lines in silicon crystals containing dislocations is the same for bound spins at dislocations as for the ESR dark spectrum of broken (dangling) bonds at dislocations after illumination of the crystal has ended. It is of the barrier type and is controlled by hole capture at the broken-bond level. The fine structure of the dislocation ESR spectrum is determined by the defect structure of the dislocations, which depends considerably on the way in which they were formed in the crystals.
- 485. Sov. Phys. Semicond. 20, 688 (1986) , “Spin-Dependent Recombination and Low-Frequency ESR Spectroscopy of Impurities and Defects in Silicon”, L. S. Vlasenko, V. A. Khramtsov.the change in the photoconductivity of silicon crystals due to saturation of ESR transition in paramagnetic recombination centers was used to record the ESR spectra of radiation defects in weakly irradiated silicon crystals. The ESR spectra of samples with defect concentration below 1012 cm-3 were recorded on the basis of a change in the Q factor of the spectrometer resonator because of a change in the photocarrier density at the resonance. The ESR signals were observed in weak magnetic fields at low frequencies. The changes in the photocarrierdensity at the resonance. The ESR signals were observed in weak magnetic fields at low frequencies. The changes in the photoconductivity of the samples were detected in the absence of a resonance alternating field at values of a static magnetic field corresponding to the points of intersection of magnetic sublevels of the paramagnetic centers with spin S > 1/2. The proposed experimental method was used to record a number of new ESR spectra of irradiated silicon crystals.
- 486. Sov. Phys. JETP 64, 612 (1986) , “Spin-Dependent Effects Due to Triplet Centers in Irradiated Silicon”, L. S. Vlasenko, M. P. Vlasenko, V. N. Lomasov, V. A. Khramtsov.A study has been made of the optical polarization of nuclei and spin-dependent photoconductivity in silicon crystals containing structural defects which are in excited triplet states when illuminated, with a nonequilibrium distribution of the populations of magnetic sublevels. Mixing of triplet states differing iin spin projection is necessary for the onset of an optical polarization of nuclei as the nuclei participate in a hyperfine interaction with the triplet centers. A correlation is found between the angular distribution and the temperature dependence of the intensities of the ESR lines of triplet centers and of the degree of optical polarization of the nuclei. It is shown that the saturation of the ESR transition of the triplet centers leads to a change in the photoconductivity of silicon crystals. A similar change in photoconductivity is obsserved at anticrossing of the magnetic sublevels of triplet centers.
- 487. Sov. Phys. Solid State 28, 1862 (1986) , “Electron states having spin S ≥ 1 at dislocations in silicon”, M. N. Zolotukhin
- 488. Solid State Commun. 57, 615-617 (1986) , “THE OPTICALLY DETECTED MAGNETIC RESONANCE OF DANGLING BONDS AT THE Si/SiO2 INTERFACE”, K. M. Lee, L. C. Kimerling, B. G. Bagley, W. E. QuinnThe optically detected magnetic resonance (ODMR) observation of dangling bonds at the Si/SiO2 interface (Pb centers) is reported in this Communication. A luminescence quenching signal is identified as arising from the Pb center through its axially symmetry g tensor along the <1 1 1#62;... (Read more)
- 489. Solid State Commun. 58, 811 (1986) , “ESR Investigation of MnCu Pairs in Silicon”, H. Dietrich, H. Vollmer and R. LabuschThe new ESR spectra are observed after co-diffusion of Mn and Cu in Si. The experimentally observed spins are interpreted as (MnCu)+ and (MnCu)−-pairs with axial (1 1 1)-symmetry. To our knowledge these are the first ESR-identified, Cu-related centres in silicon. (Read more)
- 490. Solid State Commun. 60, 867-870 (1986) , “Antisite defects in plastically-deformed GaAs: An alternative analysis”, R. BrayA revision is presented of the accepted view that the observed increease in electron paramagnetic resonance (EPR) with plastic deformation in GaAs is due to the generation of As antisite defects. It is proposed instead that only compensating deep acceptor defects are generated. The increase of the... (Read more)
- 491. Solid State Commun. 60, 871-872 (1986) , “The formation of arsenic antisite defects during plastic deformation of GaAs”, E. R. WeberThe electron paramagnetic resonance (EPR) signal of arsenic antisite defects increases after plastic deformation of GaAs. This has been attributed in the preceeding paper to the formation of only compensating acceptors rather than additional antisites. A critical discussion of this alternative model... (Read more)
- 492. phys. stat. sol. (b) 138, 337 (1986) , “A Silicon-Gold Pair in Silicon Investigated by EPR”, M. Höhne.A new gold-related defect in silicon is observed after IR irradiation. Though a thermal treatment including additional doping with lithium is necessary for the production of this centre, the lithium obviously does not participate in the paramagnetic state. The paramagnetic state is mainly localized... (Read more)
- 493. Phys. Rev. Lett. 57, 611 (1986) , “Thermal Donors in Silicon: A Study with ENDOR”, J. Michel, J. R. Niklas, and J. -M. SpaethENDOR experiments on paramagnetic thermal donors are presented for the first time. They show that the ESR spectra of all thermal donors identified by ir bands are superimposed in one narrow line ("NL8"). Only 29Si superhyperfine interactions were found and determined for up to seven... (Read more)
- 494. Phys. Rev. B 33, 2890 (1986) , “Identification of the arsenic vacancy defect in electron-irradiated GaAs”, H. J. von Bardeleben and J. C. BourgoinWe report the systematic observation of a new electron-paramagnetic-resonance spectrum in a wide series of electron-irradiated GaAs crystals. The spectrum consists of a partially resolved multiplet of 700-G linewidth and an effective g factor of 2.00 for B∥[001] and 2.04 for B∥[110]. Comparison... (Read more)
- 495. Phys. Rev. B 33, 4320 (1986) , “DX center: Crossover of deep and shallow states in Si-doped AlxGa1-xAs”, Atsushi Oshiyama, Shuhei OhnishiA new microscopic model for the origin of the DX center in Si-doped AlxGa1-xAs is proposed based on discrete variational X? cluster calculations. The calculated level structure shows that the antibonding A1 state of Si, which lies in the conduction bands as a... (Read more)
- 496. Phys. Rev. B 33, 4471 (1986) , “Strain broadening of the dangling-bond resonance at the (111) Si-SiO2 interface”, K. L. BrowerIt is observed that the linewidth and line shape of the Zeeman resonance associated with dangling bonds at the (111)Si-SiO2 interface (Pb centers) vary with the direction of the applied magnetic field. An analysis of the line shape of this resonance indicates that it can be... (Read more)
- 497. Phys. Rev. B 33, 5880 (1986) , “Antisite-related defects in plastically deformed GaAs”, P. Omling, E. R. Weber, L. SamuelsonOptical absorption measurements on plastically deformed GaAs show that the total extrinsic absorption increases with deformation, while the quenchable EL2 absorption stays constant. The nonquenchable extrinsic absorption is observed to be proportional to the EPR measured AsGa containing... (Read more)
- 498. Phys. Rev. B 34, 1360 (1986) , “Identification of the arsenic-antisite-arsenic-vacancy complex in electron-irradiated GaAs”, H. J. von Bardeleben, J. C. Bourgoin, and A. MiretWe report the observation by electron paramagnetic resonance of a new irradiation-induced defect in n-type GaAs. It is characterized by the spin Hamiltonian parameters S=1 / 2, g=1.97±0.06, A=0.068±0.004 cm-1, I=3 / 2 (100%) and attributed to the complex formed by an... (Read more)
- 499. Phys. Rev. B 34, 1381 (1986) , “Paramagnetic Resonance of a New-Oxygen-Donor Related Center in Silicon”, R. Wrner and O. F. SchirmerIn Czochralski-grown silicon annealed in the temperature range between 650 and 800 C, an anisotropic electron-spin resonance (ESR) spectrum was observed. Analysis of the angular dependence reveals monoclinic (Cs) symmetry of the representative g tensor, with one of the principal axes... (Read more)
- 500. Phys. Rev. B 34, 3610 (1986) , “Dipolar Interactions between Dangling Bonds at the (111) Si-SiO2 Interface”, K. L. Brower, T. J. Headley.In this paper a computational model is developed which allows one to calculate the contribution to the Zeeman linewidth arising from magnetic dipole-dipole interactions between unpaired electrons in the dilute limit, which in our specific application correspond to dangling bonds (Pb... (Read more)
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